Search results for: ultraviolet photodetector

Authors: Sanjida Akter, Ambali Alade Odebowale, Andrey E. Miroshnichenko, Haroldo T. Hattori

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Photodetectors (PDs) play a pivotal role in optoelectronics and optical devices, serving as fundamental components that convert light signals into electrical signals. As the field progresses, the integration of advanced materials with unique optical properties has become a focal point, paving the way for the innovation of novel PDs. This study delves into the exploration of a cutting-edge photodetector designed for deep and near ultraviolet (UV) applications. The photodetector is constructed with a composite of Zirconium Boride (ZrB2) and Chromium (Cr) alloy, deposited onto a 6H nitrogen-doped silicon carbide substrate. The determination of the optimal alloy thickness is achieved through Finite-Difference Time-Domain (FDTD) simulation, and the synthesis of the alloy is accomplished using radio frequency (RF) sputtering. Remarkably, the resulting photodetector exhibits an exceptional responsivity of 3.5 A/W under an applied voltage of -2 V, at wavelengths of 405 nm and 280 nm. This heterostructure not only exemplifies high performance but also provides a versatile platform for the development of near UV photodetectors capable of operating effectively in challenging conditions, such as environments characterized by high power and elevated temperatures. This study contributes to the expanding landscape of photodetector technology, offering a promising avenue for the advancement of optoelectronic devices in demanding applications.

Keywords: responsivity, silicon carbide, ultraviolet photodetector, zirconium boride

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Authors: Hasan Furkan Kurt, Tugba Nur Atabey, Onat Cavit Dereli, Ahmad Salmanogli, H. Selcuk Gecim

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In the article, the main goal is to study the effect of the plasmonic properties on the photocurrent generated by a photodetector. Fundamentally, a typical photodetector is designed and simulated using the finite element methods. To utilize the plasmonic effect, gold nanoparticles with different shape, size and morphology are buried into the intrinsic region. Plasmonic effect is arisen through the interaction of the incoming light with nanoparticles by which electrical properties of the photodetector are manipulated. In fact, using plasmonic nanoparticles not only increases the absorption bandwidth of the incoming light, but also generates a high intensity near-field close to the plasmonic nanoparticles. Those properties strongly affect the generated photocurrent. The simulation results show that using plasmonic nanoparticles significantly enhances the electrical properties of the photodetectors. More importantly, one can easily manipulate the plasmonic properties of the gold nanoparticles through engineering the nanoparticles' size, shape and morphology. Another important phenomenon is plasmon-plasmon interaction inside the photodetector. It is shown that plasmon-plasmon interaction improves the electron-hole generation rate by which the rate of the current generation is severely enhanced. This is the key factor that we want to focus on, to improve the photodetector electrical properties.

Keywords: plasmonic photodetector, plasmon-plasmon interaction, Gold nanoparticle, electrical properties

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Authors: Lekshmi Vijayan, K. Shreekrishna Kumar

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We demonstrated an organic field effect transistor based photodetector using phthalocyanine as the active material that exhibited high photosensitivity under varying light wavelengths. The thermally grown SiO₂ layer on silicon wafer act as a substrate. The critical parameters, such as photosensitivity, responsivity and detectivity, are comparatively high and were 3.09, 0.98AW⁻¹ and 4.86 × 10¹⁰ Jones, respectively, under a bias of 5 V and a monochromatic illumination intensity of 4mW cm⁻². The photodetector has a linear I-V curve with a low dark current. On comparing photoresponse of copper phthalocyanine at four different wavelengths, 560 nm shows better photoresponse and the highest value of photosensitivity is also obtained.

Keywords: photodetector, responsivity, photosensitivity, detectivity

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Authors: William Sidharta, Chin-Tu Lu

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Fluorescent ultraviolet lamp generates ultraviolet light which is commonly used in industrial field with certain purposes especially for curing process. Due to the value of inefficiency, there are changes in energy from electrical energy to the heat energy and this would make a defect on the industrial product caused by high temperature of lamp tube during ultraviolet light emission. The condition of industrial scale is further worsening, since commonly using dozens of fluorescent ultraviolet lamps to support huge production process and then it will generates much more heat energy. The maximum temperature of fluorescent ultraviolet lamp will get affected by arranging the lamp tube reflector and this study presents CFX simulation results of the maximum lamp tube temperature with some different reflector arrangements on purely natural convection phenomena. There exists certain spaces value of the reflector and the lamp tube to obtaining lower maximum temperature of the fluorescent ultraviolet lamp.

Keywords: CFX simulation, fluorescent UV lamp, lamp tube reflector, UV light

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Authors: Wannakorn Sangthongngam, Melissa Huerta, Jaewoo Kim, Doyeon Kim

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Continuous glucose monitoring systems are essential for diabetics to avoid health complications but come at a costly price, especially when insurance does not fully cover the diabetic testing kits needed. This paper proposes a noninvasive continuous glucose monitoring system to provide an accessible, low-cost, and painless alternative method of accurate glucose measurements to help improve quality of life. Using a light source with a wavelength of 850nm illuminates the fingertip for the photodetector to detect the transmitted light. Utilizing SeeDevice’s photon-assisted tunneling photodetector (PAT-PD)-based QMOS™ sensor, fluctuations of voltage based on photon absorption in blood cells are comparable to traditional glucose measurements. The performance of the proposed method was validated using 4 test participants’ transmitted voltage readings compared with measurements obtained from the Accu-Chek glucometer. The proposed method was able to successfully measure concentrations from linear regression calculations.

Keywords: continuous glucose monitoring, non-invasive continuous glucose monitoring, NIR, photon-assisted tunneling photodetector, QMOS™, wearable device

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Authors: Rajesh Kumar Ulaganathan, Yi-Ying Lu, Chia-Jung Kuo, Srinivasa Reddy Tamalampudi, Raman Sankar, Fang Cheng Chou, Yit-Tsong Chen

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In this paper, we report the optoelectronic properties of multi-layered GeS nanosheets (~28 nm thick)-based field-effect transistors (called GeS-FETs). The multi-layered GeS-FETs exhibit remarkably high photoresponsivity of Rλ ~ 206 AW-1 under illumination of 1.5 µW/cm2 at  = 633 nm, Vg = 0 V, and Vds = 10 V. The obtained Rλ ~ 206 AW-1 is excellent as compared with a GeS nanoribbon-based and the other family members of group IV-VI-based photodetectors in the two-dimensional (2D) realm, such as GeSe and SnS2. The gate-dependent photoresponsivity of GeS-FETs was further measured to be able to reach Rλ ~ 655 AW-1 operated at Vg = -80 V. Moreover, the multi-layered GeS photodetector holds high external quantum efficiency (EQE ~ 4.0 × 104 %) and specific detectivity (D* ~ 2.35 × 1013 Jones). The measured D* is comparable to those of the advanced commercial Si- and InGaAs-based photodiodes. The GeS photodetector also shows an excellent long-term photoswitching stability with a response time of ~7 ms over a long period of operation (>1 h). These extraordinary properties of high photocurrent generation, broad spectral range, fast response, and long-term stability make the GeS-FET photodetector a highly qualified candidate for future optoelectronic applications.

Keywords: germanium sulfide, photodetector, photoresponsivity, external quantum efficiency, specific detectivity

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Authors: Saleh H. Abud, Z. Hassan, F. K. Yam

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Characteristics of MSM photodetector based on a porous In0.08Ga0.92N thin film were reported. Nanoporous structures of n-type In0.08Ga0.92N/AlN/Si thin films were synthesized by photoelectrochemical (PEC) etching at a ratio of 1:4 of HF:C2H5OH solution for 15 min. The structural and optical properties of pre- and post-etched thin films were investigated. Field emission scanning electron microscope and atomic force microscope images showed that the pre-etched thin film has a sufficiently smooth surface over a large region and the roughness increased for porous film. Blue shift has been observed in photoluminescence emission peak at 300 K for porous sample. The photoluminescence intensity of the porous film indicated that the optical properties have been enhanced. A high work function metals (Pt and Ni) were deposited as a metal contact on the porous films. The rise and recovery times of the devices were investigated at 390 nm chopped light. Finally, the sensitivity and quantum efficiency were also studied.

Keywords: porous InGaN, photoluminescence, SMS photodetector, atomic force microscopy

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Authors: Laboratory of Semiconducting, Metallic Materials (LMSM) Biskra Algeria

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InZnSnO2 (IZTO)/β-Ga2O3 Schottky solar barrier photodetector (PhD) exposed to 255 nm was simulated and compared to the measurement. Numerical simulations successfully reproduced the photocurrent at reverse bias and response by taking into account several factors, such as conduction mechanisms and material parameters. By adopting reducing the density of the trap as an improvement. The effect of reducing the bulk trap densities on the photocurrent, response, and time-dependent (continuous conductivity) was studied. As the trap density decreased, the photocurrent increased. The response was 0.04 A/W for the low Ga2O3 trap density. The estimated decay time for the lowest intensity ET (0.74, 1.04 eV) is 0.05 s and is shorter at ∼0.015 s for ET (0.55 eV). This indicates that the shallow traps had the dominant effect (ET = 0.55 eV) on the continuous photoconductivity phenomenon. Furthermore, with decreasing trap densities, this PhD can be considered as a self-powered solar-blind photodiode (SBPhD).

Keywords: IZTO/β-Ga2O3, self-powered solar-blind photodetector, numerical simulation, bulk traps

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Authors: P. Joshna, Souvik Kundu

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Detection of ultraviolet (UV) radiation is very important as it has exhibited a profound influence on humankind and other existences, including military equipment. In this work, a self-powered UV photodetector was reported based on oxides heterojunctions. The thin films of p-type nickel oxide (NiO) and n-type reduced graphene oxide (rGO) were used for the formation of p-n heterojunction. Low-Cost and low-temperature chemical synthesis was utilized to prepare the oxides, and the spin coating technique was employed to deposit those onto indium doped tin oxide (ITO) coated glass substrates. The top electrode platinum was deposited utilizing physical vapor evaporation technique. NiO offers strong UV absorption with high hole mobility, and rGO prevents the recombination rate by separating electrons out from the photogenerated carriers. Several structural characterizations such as x-ray diffraction, atomic force microscope, scanning electron microscope were used to study the materials crystallinity, microstructures, and surface roughness. On one side, the oxides were found to be polycrystalline in nature, and no secondary phases were present. On the other side, surface roughness was found to be low with no pit holes, which depicts the formation of high-quality oxides thin films. Whereas, x-ray photoelectron spectroscopy was employed to study the chemical compositions and oxidation structures. The electrical characterizations such as current-voltage and current response were also performed on the device to determine the responsivity, detectivity, and external quantum efficiency under dark and UV illumination. This p-n heterojunction device offered faster photoresponse and high on-off ratio under 365 nm UV light illumination of zero bias. The device based on the proposed architecture shows the efficacy of the oxides heterojunction for efficient UV photodetection under zero bias, which opens up a new path towards the development of self-powered photodetector for environment and health monitoring sector.

Keywords: chemical synthesis, oxides, photodetectors, spin coating

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Authors: A. Evcin, N. Çiçek Bezir, R. Duman, N. Duman

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Nowadays, a great concern is placed on the harmfulness of ultraviolet radiation (UVR) which attacks human bodies. Nanocarbon materials, such as carbon nanotubes (CNTs), carbon nanofibers (CNFs) and graphene, have been considered promising alternatives to shielding materials because of their excellent electrical conductivities, very high surface areas and low densities. In the present work, carbon nanofibers have been synthesized from solutions of Polyacrylonitrile (PAN)/ N,N-dimethylformamide (DMF) by electrospinning method. The carbon nanofibers have been stabilized by oxidation at 250 °C for 2 h in air and carbonized at 750 °C for 1 h in H2/N2. We present the fabrication and characterization of transparent and ultraviolet (UV) shielding CNF/polymer composites. The content of CNF filler has been varied from 0.2% to 0.6 % by weight. UV Spectroscopy has been performed to study the effect of composition on the transmittance of polymer composites.

Keywords: electrospinning, carbon nanofiber, characterization, composites, nanofiber, ultraviolet radiation

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Authors: Patrik Scajev, Pavels Onufrijevs, Algirdas Mekys, Tadas Malinauskas, Dominykas Augulis, Liudvikas Subacius, Kuo-Chih Lee, Jevgenijs Kaupuzs, Arturs Medvids, Hung Hsiang Cheng

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In this study, we focused on the optoelectronic properties of the photodiodes prepared by using 200 nm thick Ge₀.₉₅Sn₀.₀₅ epitaxial layers on Ge/n-Si substrate with aluminum contacts. Photodiodes were formed on non-irradiated and Nd: YAG laser irradiated Ge₀.₉₅Sn₀.₀₅ layers. The samples were irradiated by pulsed Nd: YAG laser with 136.7-462.6 MW/cm² intensity. The photodiodes were characterized by using short laser pulses with the wavelength in the 2.0-2.6 μm range. The laser-irradiated diode was found more sensitive in the long-wavelength range due to laser-induced Sn atoms redistribution providing formation of graded bandgap structure. Sub-millisecond photocurrent relaxation in the diodes revealed their suitability for image sensors. Our findings open the perspective for improving the photo-sensitivity of GeSn alloys in the mid-infrared by pulsed laser processing.

Keywords: GeSn, laser processing, photodetector, infrared

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Authors: Felipe Osorio Ospina, Maria Adelaida Mejia Arango, Esteban Onésimo Vallejo Agudelo, Victoria Lucía Dávila Osorio, Natalia Vargas Grisales, Lina María Martínez Sanchez, Camilo Andrés Agudelo Vélez, Ángela Maria Londoño García, Isabel Cristina Ortiz Trujillo

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Excessive exposure to ultraviolet radiation, has shown to be a risk factor for photodamage, alteration of the immune mechanisms to recognize malignant cells and cutaneous pro-inflamatorios States and skin cancers. Objective: Identify the time of exposure to ultraviolet radiation for the production of chromosomal damage in human lymphocytes. Methodology: We conducted an in vitro study serial, in which samples were taken from heparinized blood of healthy people, who do not submit exposure to agents that could induce chromosomal alterations. The samples were cultured in RPMI-1640 medium containing 10% fetal bovine serum, penicillin and streptomycin antibiotic. Subsequently, they were grouped and exposed to ultraviolet light for 1 to 20 seconds. At the end of the treatments, cytology samples were prepared, and it was colored with Giemsa (5%). Reading was carried out in an optical microscope and 100 metaphases analysed by treatment for posting chromosomal alterations. Each treatment was conducted at three separate times and each became two replicas. Results: We only presented chromosomal alterations in lymphocytes exposed to UV for a groups 1 to 3 seconds (p<0.05). Conclusions: Exposure to ultraviolet radiation generates visible damage in chromosomes from human lymphocytes observed in light microscopy, the highest rates of injury was observed between two and three seconds, and above this value, the reduction in the number of mitotic cells was evident.

Keywords: ultraviolet rays, lymphocytes, chromosome breakpoints, photodamage

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Authors: Felipe Osorio Ospina, Maria Adelaida Mejia Arango, Esteban Onésimo Vallejo Agudelo, Victoria Lucía Dávila Osorio, Natalia Vargas Grisales, Lina María Martínez Sanchez, Camilo Andrés Agudelo Vélez, Ángela Maria Londoño García, Isabel Cristina Ortiz Trujillo

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Excessive exposure to ultraviolet radiation, has shown to be a risk factor for photodamage, alteration of the immune mechanisms to recognize malignant cells and cutaneous pro-inflamatorios states and skin cancers. Objective: To identify the time of exposure to ultraviolet radiation for the production of chromosomal damage in human lymphocytes. Methodology: We conducted an in vitro study serial, in which samples were taken from the heparinized blood of healthy people, who do not submit exposure to agents that could induce chromosomal alterations. The samples were cultured in RPMI-1640 medium containing 10% fetal bovine serum, penicillin, and streptomycin antibiotic. Subsequently, they were grouped and exposed to ultraviolet light for 1 to 20 seconds. At the end of the treatments, cytology samples were prepared, and it was colored with Giemsa (5%). Reading was carried out in an optical microscope and 100 metaphases analysed by treatment for posting chromosomal alterations. Each treatment was conducted at three separate times and each became two replicas. Results: We only presented chromosomal alterations in lymphocytes exposed to UV for groups 1 to 3 seconds (p < 0.05). Conclusions: Exposure to ultraviolet radiation generates visible damage in chromosomes from human lymphocytes observed in light microscopy, the highest rates of injury was observed between two and three seconds, and above this value, the reduction in the number of mitotic cells was evident.

Keywords: chromosome breakpoints, lymphocytes, photodamage, ultraviolet rays

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Authors: Chitralekha Ngangbam, Aniruddha Mondal, Naorem Khelchand Singh

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Aluminium (Al) doped In2O3 (Indium Oxide) nanocolumn array was synthesized by glancing angle deposition (GLAD) technique on Si (n-type) substrate for photodetector application. The sample was characterized by scanning electron microscopy (SEM). The average diameter of the nanocolumn was calculated from the top view of the SEM image and found to be ∼80 nm. The length of the nanocolumn (~500 nm) was calculated from cross sectional SEM image and it shows that the nanocolumns are perpendicular to the substrate. The EDX analysis confirmed the presence of Al (Aluminium), In (Indium), O (Oxygen) elements in the samples. The XRD patterns of the Al-doped In2O3 nanocolumn show the presence of different phases of the Al doped In2O3 nanocolumn i.e. (222) and (622). Three different peaks were observed from the PL analysis of Al doped In2O3 nanocolumn at 365 nm, 415 nm and 435 nm respectively. The peak at PL emission at 365 nm can be attributed to the near band gap transition of In2O3 whereas the peaks at 415 nm and 435 nm can be attributed to the trap state emissions due to oxygen vacancies and oxygen–indium vacancy centre in Al doped In2O3 nanocolumn. The current-voltage (I–V) characteristics of the Al doped In2O3 nanocolumn based detector was measured through the Au Schottky contact. The devices were then examined under the halogen light (20 W) illumination for photocurrent measurement. The Al-doped In2O3 nanocolumn based optical detector showed high conductivity and low turn on voltage at 0.69 V under white light illumination. A maximum photoresponsivity of 82 A/W at 380 nm was observed for the device. The device shows a high internal gain of ~267 at UV region (380 nm) and ∼127 at visible region (760 nm). Also the rise time and fall time for the device at 650 nm is 0.15 and 0.16 sec respectively which makes it suitable for fast response detector.

Keywords: glancing angle deposition, nanocolumn, semiconductor, photodetector, indium oxide

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Authors: A. Anandha Selvan, B. Malarvizhi

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In recent year the problem of space debris have become very serious. The mass of the artificial objects in orbit increased quite steadily at the rate of about 145 metric tons annually, leading to a total tally of approximately 7000 metric tons. Now most of space debris object orbiting in LEO region about 97%. The catastrophic collision can be mostly occurred in LEO region, where this collision generate the new debris. Thus, we propose a concept for cleaning the space debris in the region of thermosphere by passing the Extreme Ultraviolet (EUV) radiation to in front of space debris object from the re-orbiter. So in our concept the Extreme Ultraviolet (EUV) radiation will create the thermosphere expansion by reacting with atmospheric gas particles. So the drag is produced in front of the space debris object by thermosphere expansion. This drag force is high enough to slow down the space debris object’s relative velocity. Therefore the space debris object gradually reducing the altitude and finally enter into the earth’s atmosphere. After the first target is removed, the re-orbiter can be goes into next target. This method remove the space debris object without catching debris object. Thus it can be applied to a wide range of debris object without regard to their shapes or rotation. This paper discusses the operation of re-orbiter for removing the space debris in thermosphere region.

Keywords: active space debris removal, space debris, LEO, extreme ultraviolet, re-orbiter, thermosphere

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Authors: Augusto P. Andrade, Pedro L. Guedes, Pedro T. Da Silva, Liliane Ventura

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The present study evaluates the contribution of sunglasses frames as additional eye safety for ultraviolet backscatter light. Current sunglasses standards establish safe limits regarding lens transmittance in the 280 nm to 380 nm range. However, frames are additionally relevant in protecting the eyes from ultraviolet exposure. This study involves the use of a prototype that simulates backscattered light environments and quantifies the contribution of the frame as a function of the light that reaches the eye when wearing sunglasses. The prototype consists of an LED illuminated sphere, a mannequin head with optical sensors, and baseline and measurements are performed. A set of 29 samples was tested, and results show the variation of light blocking presented by different types of frames, ranging from 68% to 80%. This is still ongoing research. Prototype improvements for allowing albedo simulation, as well as the six types of sky simulation, are being implemented to show the intensity of UV light reaching the eye for several environments worldwide.

Keywords: sunglasses standards, sunglasses frame, ultraviolet protection, albedo

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Authors: Vishakha Parihar

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This study reports the preparation of iron metal-doped nanoparticles of Titanium dioxide by the sol-gel process and the photocatalytic degradation of dye. Nano-particles were characterized by SEM, EDX, and UV-Vis spectroscopy. The detailed study confirmed that nanoparticles have grown in high density and have good optical properties. The photocatalytic batch experiment was performed in an aqueous solution where congo red dye was used as a dye pollutant under the irradiation of ultraviolet rays created by using a mercury lamp source. Total degradation efficiency achieved was approximately 85% to 93% in the duration of 100-120 minutes of irradiation under an ultraviolet light source. The decolorization ability of this process was measured by absorbance at a maximum wavelength of 498nm. The results indicated that the iron-doped Titanium dioxide nanoparticles showed an excellent photocatalytic response to the degradation of dye under the ultraviolet light source within a very short period of time.

Keywords: titanium dioxide, nano-particles iron dope, photocatalytic degradation, Congo red dye, sol-gel process

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Authors: Simbiat O. Ayilara-Akande, Soji Fakoya

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Quality and yield are always the target of farmers, including mushroom farmers. This study investigated how better Pleurotus pulmonarius can be obtained with the induction of mutagens into the process of spawn production in order to improve both the quality and the yield. Mushroom spawns were treated with ultraviolet radiation (UV) and hydroxylamine hydrochloride (HA) at different exposure times (2, 6, and 10 minutes) and different concentrations (10, 30, and 50Mm), respectively. The treated spawns were used to cultivate mushrooms on five substrates in the family of Gramineae viz: sorghum, rice, bamboo, sugarcane, and corn straws. Matured fruit bodies were harvested after a few weeks, and their parameters were taken and recorded. This study reveals a significant yield increase in mushroom grown on all the substrates when treated with ultraviolet radiation (UV) for 10 minutes and 6 minutes, respectively. Mushroom spawns treated with hydroxylamine hydrochloride showed a negative correlation in the yield with an increased in mutagen concentration. Hence, Ultraviolet light could be employed to enhance the quality and yield of mushroom production.

Keywords: mushroom, protein, mutagens, yield

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Authors: Anil Kawan, Soon Jae Yu, Jong Min Park

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GaN-based 365 nm wavelength ultraviolet (UV) light emitting diodes (LED) have various applications: curing, molding, purification, deodorization, and disinfection etc. However, their usage is limited by very low output power, because of the light absorption in the GaN layers. In this study, we demonstrate a method utilizing removal of 365 nm absorption layer buffer GaN and thinning the n-type GaN so as to improve the light extraction efficiency of the GaN-based 365 nm UV LED. The UV flip chip LEDs of chip size 1.3 mm x 1.3 mm were fabricated using GaN epilayers on a sapphire substrate. Via-hole n-type contacts and highly reflective Ag metal were used for efficient light extraction. LED wafer was aligned and bonded to AlN carrier wafer. To improve the extraction efficiency of the flip chip LED, sapphire substrate and absorption layer buffer GaN were removed by using laser lift-off and dry etching, respectively. To further increase the extraction efficiency of the LED, exposed n-type GaN thickness was reduced by using inductively coupled plasma etching.

Keywords: extraction efficiency, light emitting diodes, n-GaN thinning, ultraviolet

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Authors: Charles Koduru, Parth Patel, M. Hassan Tanveer

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In this paper, the communication between a team of robots is used to sanitize an environment with germs is proposed. We introduce capabilities from a team of robots (most likely heterogeneous), a wheeled robot named ROSbot 2.0 that consists of a mounted LiDAR and Kinect sensor, and a modified prototype design of a unicycle-drive Roomba robot called the UV robot. The UV robot consists of ultrasonic sensors to avoid obstacles and is equipped with an ultraviolet light system to disinfect and kill germs, such as bacteria and viruses. In addition, the UV robot is equipped with disinfectant spray to target hidden objects that ultraviolet light is unable to reach. Using the sensors from the ROSbot 2.0, the robot will create a 3-D model of the environment which will be used to factor how the ultraviolet robot will disinfect the environment. Together this proposed system is known as the RME assistive robot device or RME system, which communicates between a navigation robot and a germ disinfecting robot operated by a user. The RME system includes a human-machine interface that allows the user to control certain features of each robot in the RME assistive robot device. This method allows the cleaning process to be done at a more rapid and efficient pace as the UV robot disinfects areas just by moving around in the environment while using the ultraviolet light system to kills germs. The RME system can be used in many applications including, public offices, stores, airports, hospitals, and schools. The RME system will be beneficial even after the COVID-19 pandemic. The Kennesaw State University will continue the research in the field of robotics, engineering, and technology and play its role to serve humanity.

Keywords: multi robot system, assistive robots, COVID-19 pandemic, ultraviolent technology

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Authors: R. Pääkkönen, L. Korpinen, F. Gobba

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The objective of our study is to investigate UV exposure in Finland through sample measurements as a typical case study in summer and winter. We measured UV-BC weighted radiation and calculated a daily dose, which is about 100–150 times the Finnish exposure limit value in summer and 1–6 times in winter. The measured ultraviolet indices varied from 0 to 7 (scale 0–18), which is less than the values obtained in countries that are located farther south from Tampere latitude of 61 degrees. In wintertime, the UV exposure was modest compared to summertime, 50–150 mW/m² and about 1–5 mW/m² in summer and winter, respectively. However, technical means to manage UV exposure in Scandinavia are also needed in summer- and springtime.

Keywords: ultraviolet radiation, measurement, winter, summer

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Authors: Xiao-Mei Zhang, Sian-Hong Tseng, Ming-Yen Lu

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Two-dimensional (2D) transition metal dichalcogenides (TMDCs), such as MoS₂, have attracted considerable attention owing to the unique optical and electronic properties related to its 2D ultrathin atomic layer structure. MoS₂ is becoming prevalent in post-silicon digital electronics and in highly efficient optoelectronics due to its extremely low thickness and its tunable band gap (Eg = 1-2 eV). For low-power, high-performance complementary logic applications, both p- and n-type MoS₂ FETs (NFETs and PFETs) must be developed. NFETs with an electron accumulation channel can be obtained using unintentionally doped n-type MoS₂. However, the fabrication of MoS₂ FETs with complementary p-type characteristics is challenging due to the significant difficulty of injecting holes into its inversion channel. Plasma treatments with different species (including CF₄, SF₆, O₂, and CHF₃) have also been found to achieve the desired property modifications of MoS₂. In this work, we demonstrated a p-type multilayer MoS₂ enabled by selective-area doping using CHF₃ plasma treatment. Compared with single layer MoS₂, multilayer MoS₂ can carry a higher drive current due to its lower bandgap and multiple conduction channels. Moreover, it has three times the density of states at its minimum conduction band. Large-area growth of MoS₂ films on 300 nm thick SiO₂/Si substrate is carried out by thermal decomposition of ammonium tetrathiomolybdate, (NH₄)₂MoS₄, in a tube furnace. A two-step annealing process is conducted to synthesize MoS₂ films. For the first step, the temperature is set to 280 °C for 30 min in an N₂ rich environment at 1.8 Torr. This is done to transform (NH₄)₂MoS₄ into MoS₃. To further reduce MoS₃ into MoS₂, the second step of annealing is performed. For the second step, the temperature is set to 750 °C for 30 min in a reducing atmosphere consisting of 90% Ar and 10% H₂ at 1.8 Torr. The grown MoS₂ films are subjected to out-of-plane doping by CHF₃ plasma treatment using a Dry-etching system (ULVAC original NLD-570). The radiofrequency power of this dry-etching system is set to 100 W and the pressure is set to 7.5 mTorr. The final thickness of the treated samples is obtained by etching for 30 s. Back-gated MoS₂ PFETs were presented with an on/off current ratio in the order of 10³ and a field-effect mobility of 65.2 cm²V⁻¹s⁻¹. The MoS₂ PFETs photodetector exhibited ultraviolet (UV) photodetection capability with a rapid response time of 37 ms and exhibited modulation of the generated photocurrent by back-gate voltage. This work suggests the potential application of the mild plasma-doped p-type multilayer MoS₂ in UV photodetectors for environmental monitoring, human health monitoring, and biological analysis.

Keywords: photodetection, p-type doping, multilayers, MoS₂

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Authors: Ahmed Abdrabou, Medhat Abdalla

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The studied stele dates back to Third Intermediate Period (1075-664) B.C in an ancient Egypt. It is made of wood and covered with painted gesso layers. This study aims to use a combination of multi spectral imaging {visible, infrared (IR), Visible-induced infrared luminescence (VIL), Visible-induced ultraviolet luminescence (UVL) and ultraviolet reflected (UVR)}, along with portable x-ray fluorescence in order to map and identify the pigments as well as to provide a deeper understanding of the painting techniques. Moreover; the authors were significantly interested in the identification of wood species. Multispectral imaging acquired in 3 spectral bands, ultraviolet (360-400 nm), visible (400-780 nm) and infrared (780-1100 nm) using (UV Ultraviolet-induced luminescence (UVL), UV Reflected (UVR), Visible (VIS), Visible-induced infrared luminescence (VIL) and Infrared photography. False color images are made by digitally editing the VIS with IR or UV images using Adobe Photoshop. Optical Microscopy (OM), potable X-ray fluorescence spectroscopy (p-XRF) and Fourier Transform Infrared Spectroscopy (FTIR) were used in this study. Mapping and imaging techniques provided useful information about the spatial distribution of pigments, in particular visible-induced luminescence (VIL) which allowed the spatial distribution of Egyptian blue pigment to be mapped and every region containing Egyptian blue, even down to single crystals in some instances, is clearly visible as a bright white area; however complete characterization of the pigments requires the use of p. XRF spectroscopy. Based on the elemental analysis found by P.XRF, we conclude that the artists used mixtures of the basic mineral pigments to achieve a wider palette of hues. Identification of wood species Microscopic identification indicated that the wood used was Sycamore Fig (Ficus sycomorus L.) which is recorded as being native to Egypt and was used to make wooden artifacts since at least the Fifth Dynasty.

Keywords: polychrome wooden stele, multispectral imaging, IR luminescence, Wood identification, Sycamore Fig, p-XRF

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Authors: Artemova Anastasiia, Shen Zexiang, Savilov Serguei

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The marine environment is very aggressive for a number of factors, such as moisture, temperature, winds, ultraviolet radiation, chloride ion concentration, oxygen concentration, pollution, and biofouling, all contributing to marine corrosion. Protective organic coatings provide protection either by a barrier action from the layer, which is limited due to permeability to water and oxygen or from active corrosion inhibition and cathodic protection due to the pigments in the coating. Carbon nanotubes can play not only barrier effect but also passivation effect via adsorbing molecular species of oxygen, hydroxyl, chloride and sulphate anions. Multiwall carbon nanotubes composite provide very important properties such as mechanical strength, non-cytotoxicity, outstanding thermal and electrical conductivity, and very strong absorption of ultraviolet radiation. The samples of stainless steel (316L) coated by epoxy resin with carbon nanotubes-based pigments were exposed to UV irradiation (340nm), and immersion to the sodium chloride solution for 1000h and corrosion behavior in 3.5 wt% sodium chloride (NaCl) solution was investigated. Experimental results showed that corrosion current significantly decreased in the presence of carbon nanotube-based materials, especially nitrogen-doped ones, in the composite coating. Importance of the structure and composition of the pigment materials and its composition was established, and the mechanism of the protection was described. Finally, the effect of nitrogen doping on the corrosion behavior was investigated. The pigment-polymer crosslinking improves the coating performance and the corrosion rate decreases in comparison with pure epoxy coating from 5.7E-05 to 1.4E-05mm/yr for the coating without any degradation; in more than 6 times for the coating after ultraviolet degradation; and more than 16% for the coatings after immersion degradation.

Keywords: corrosion, coating, carbon nanotubes, degradation

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Authors: Luai Z. Hasoun, Steven W. Bailey, Kitti K. Outlaw, June E. Ayling

Abstract:

Human skin color is thought to have evolved to balance sufficient photochemical synthesis of vitamin D versus the need to protect not only DNA but also folate from degradation by ultraviolet light (UV). Although the risk of DNA damage and subsequent skin cancer is related to light skin color, the effect of UV on skin folate of any species is unknown. Here we show that UVA irradiation at 13 mW/cm2 for a total exposure of 187 J/cm2 (similar to a maximal daily equatorial dose) induced a significant loss of total folate in epidermis of ex vivo white skin. No loss was observed in black skin samples, or in the dermis of either color. Interestingly, while the concentration of 5 methyltetrahydrofolate (5-MTHF) fell in white epidermis, a concomitant increase of tetrahydrofolic acid was found, though not enough to maintain the total pool. These results demonstrate that UVA indeed not only decreases folate in skin, but also rearranges the pool components. This could be due in part to the reported increase of NADPH oxidase activity upon UV irradiation, which in turn depletes the NADPH needed for 5-MTHF biosynthesis by 5,10-methylenetetrahydrofolate reductase. The increased tetrahydrofolic acid might further support production of the nucleotide bases needed for DNA repair. However, total folate was lost at a rate that could, with strong or continuous enough exposure to ultraviolet radiation, substantially deplete light colored skin locally, and also put pressure on total body stores for individuals with low intake of folate.

Keywords: depletion, folate, human skin, ultraviolet

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Authors: Masahiro Takahashi, Kosuke Harada, Shihomi Nakao, Mitsuhiro Higashihata, Hiroshi Ikenoue, Daisuke Nakamura, Tatsuo Okada

Abstract:

Zinc oxide (ZnO) is one of the light emitting materials in ultraviolet (UV) region. In addition, ZnO nanostructures are also attracting increasing research interest as building blocks for UV optoelectronic applications. We have succeeded in synthesizing vertically-aligned ZnO nanostructures by laser interference patterning, which is catalyst-free and non-contact technique. In this study, vertically-aligned ZnO nanowall arrays were synthesized using two-beam interference. The maximum height and average thickness of the ZnO nanowalls were about 4.5 µm and 200 nm, respectively. UV lasing from a piece of the ZnO nanowall was obtained under the third harmonic of a Q-switched Nd:YAG laser excitation, and the estimated threshold power density for lasing was about 150 kW/cm2. Furthermore, UV lasing from the vertically-aligned ZnO nanowall was also achieved. The results indicate that ZnO nanowalls can be applied to random laser.

Keywords: zinc oxide, nanowall, interference laser, UV lasing

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Authors: Ewelina Nowak, Anna Wisla-Swider, Krzysztof Danel

Abstract:

Aqueous suspensions of DNA were illuminated with linearly polarized visible light and ultraviolet for 5, 15, 20 and 40 h. In order to check the nature of modification, DNA interactions were characterized by FTIR spectroscopy. For each illuminated sample, weight average molecular weight and hydrodynamic radius were measured by high pressure size exclusion chromatography. Resulting optical changes for illuminated DNA were investigated using UV-Vis spectra and photoluminescent. Optical properties show potential application in sensors based on modified DNA. Then selected DNA-surfactant complexes were illuminated with electromagnetic radiation for 5h. Molecular structure, optical characteristic were examinated for obtained complexes. Illumination led to changes of complexes physicochemical properties as compared with native DNA. Observed changes were induced by rearrangement of the molecular structure of DNA chains.

Keywords: biopolymers, deoxyribonucleic acid, ionic liquids, linearly polarized visible light, ultraviolet

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Authors: Mauro Masili, Fernanda O. Duarte, Liliane Ventura

Abstract:

Ultraviolet (UV) radiation is electromagnetic waves from 100 – 400 nm wavelength. The World Health Organization and the International Commission on Non-Ionizing Radiation Protection (ICNIRP) recommend guidelines on the exposure of the eyes to UV radiation because it is correlated to ophthalmic diseases. Those exposure limits for an 8-h period are 1) UV radiant exposure should not exceed 30 J/m2 when irradiance is spectrally weighted using an actinic action spectrum; 2) unweighted radiant exposure in the UV-A spectral region 315 – 400 nm should not exceed 10 kJ/m2. Sunglasses play an important role in preventing eye injuries related to Sun exposure. We have calculated the direct and diffuse solar UV irradiance in a geometry that refers to an individual wearing a sunglass, in which the solar rays strike on a vertical surface. The diffuse rays are those scattered from the atmosphere and from the local environment. The calculations used the open-source SMARTS2 spectral model, in which we assumed a clear sky condition, aside from information about site location, date, time, ozone column, aerosols, and turbidity. In addition, we measured the spectral transmittance of a typical sunglasses lens and the global solar irradiance was weighted with the spectral transmittance profile of the lens. The radiant exposure incident on the eye’s surface was calculated in the UV and UV-A ranges following the ICNIRP’s recommendations for each day of the year. The tested lens failed the UV-A safe limit, while the UV limit failed to comply with this limit after the aging process. Hence, the ICNIRP safe limits should be considered in the standards to increase the protection against UV radiation on the eye.

Keywords: ICNIRP safe limits, ISO-12312-1, sunglasses, ultraviolet radiation

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Authors: Badis Kahouadji, Lakhdar Guerbous, Lyes Lamiri

Abstract:

For many years, the luminescent materials were investigated principally in the infrared and visible areas, because the ultraviolet (UV) and especially in vacuum Ultraviolet (VUV) are technically more difficult to explore, especially absence of applications requiring of materials suitable to short wavelengths.Recent necessary, related to the development of certain technologies, encouraged research in these spectra domains. It is in this context that the 4Fn-4Fn-1 5d transitions of rare earth in insulating materials, lying in the UV and VUV, are the aim of large number of studies. These studies relate in particular to search for new scintillator materials used for spectroscopy and X-ray, ɤ, as well as medical imaging. The 4Fn- 4Fn-15d transitions of the rare earth dependent to the host-matrix, several matrices ions were used to study these transitions, in this work we are suggeting to study on a very specific class of inorganic scintillators that are orthophosphate doped with rare earth ions, this study focused on the Pr3+ concentration on the structural and optical properties of Pr3+ doped YPO4 (yttriumorthophosphate) with powder form prepared by the Sol Gel method.

Keywords: rare earth, scintillator, YPO4:Pr3+ nanophosphors, sol gel, 4Fn-4Fn-15d transitions

Procedia PDF Downloads 569

Authors: Li Li, Lei Wang, Chenglin Du, Mengxin Ren, Xinzheng Zhang, Wei Cai, Jingjun Xu

Abstract:

Strong coupling between excitons of quantum dots and plasmons in nanocavites can be realized at room temperature due to the strong confinement of the plasmon fields, which offers building blocks for quantum information systems or ultralow-power switches and lasers. In this work, by using cathodoluminescence, ultrastrong coupling with Rabi splitting above 1 eV between breathing plasmons in Aluminum metal-insulator-metal (MIM) cavity and excited state of CdZnS/ZnS quantum dots was reported in near-UV spectrum. Analytic analysis and full-wave electromagnetic simulations provide the evidence for the strong coupling and confirm the hybridization of the QDs exciton and LSP breathing mode. This study opens the way for new emerging applications based on strongly coupled light-matter states all over the visible region down to ultra-violet frequencies.

Keywords: breathing mode, plasmonics, quantum dot, strong coupling, ultraviolet

Procedia PDF Downloads 174