Search results for: silicon refinement
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 698

Search results for: silicon refinement

578 Modelling and Optimization Analysis of Silicon/MgZnO-CBTSSe Tandem Solar Cells

Authors: Vallisree Sivathanu, Kumaraswamidhas Lakshmi Annamalai, Trupti Ranjan Lenka

Abstract:

We report a tandem solar cell model with Silicon as the bottom cell absorber material and Cu₂BaSn(S, Se)₄(CBTSSe) as absorber material for the top cell. As a first step, the top and bottom cells were modelled and validated by comparison with the experiment. Once the individual cells are validated, then the tandem structure is modelled with Indium Tin Oxide(ITO) as conducting layer between the top and bottom cells. The tandem structure yielded better open circuit voltage and fill factor; however, the efficiency obtained is 7.01%. The top cell and the bottom cells are investigated with the help of electron-hole current density, photogeneration rate, and external quantum efficiency profiles. In order to minimize the various loss mechanisms in the tandem solar cell, the material parameters are optimized within experimentally achievable limits. Initially, the top cell optimization was carried out; then, the bottom cell is optimized for maximizing the light absorption, and upon minimizing the current and photon losses in the tandem structure, the maximum achievable efficiency is predicted to be 19.52%.

Keywords: CBTSSe, silicon, tandem, solar cell, device modeling, current losses, photon losses

Procedia PDF Downloads 75
577 Preceramic Polymers Formulations for Potential Additive Manufacturing

Authors: Saja M. Nabat Al-Ajrash, Charles Browning, Rose Eckerle, Li Cao

Abstract:

Three preceramic polymer formulations for potential use in 3D printing technologies were investigated. The polymeric precursors include an allyl hydrido polycarbosilane (SMP-10), SMP-10/1,6-dexanediol diacrylate (HDDA) mixture, and polydimethylsiloxane (PDMS). The rheological property of the polymeric precursors, including the viscosity within a wide shear rate range was compared to determine the applicability in additive manufacturing technology. The structural properties of the polymeric solutions and their photocureability were investigated using Fourier transform infrared spectroscopy (FTIR) and differential scanning calorimetry (DSC). Moreover, thermogravimetric analysis (TGA) and X-ray diffraction (XRD) were utilized to study polymeric to ceramic conversion for versatile precursors. The prepared precursor resin proved to have outstanding photo-curing properties and the ability to transform to the silicon carbide phase at temperatures as low as 850 °C. The obtained ceramic was fully dense with nearly linear shrinkage and a shiny, smooth surface after pyrolysis. Furthermore, after pyrolysis to 1350 °C and TGA analysis, PDMS polymer showed the highest onset decomposition temperature and the lowest retained weight (52 wt%), while SMP.10/HDDA showed the lowest onset temperature and ceramic yield (71.7 wt%). In terms of crystallography, the ceramic matrix composite appeared to have three coexisting phases, including silicon carbide, and silicon oxycarbide. The results are very promising to fabricate ceramic materials working at high temperatures with complex geometries.

Keywords: preceramic polymer, silicon carbide, photocuring, allyl hydrido polycarbosilane, SMP-10

Procedia PDF Downloads 97
576 Implementation of Industrial Ecology Principles in the Production and Recycling of Solar Cells and Solar Modules

Authors: Julius Denafas, Irina Kliopova, Gintaras Denafas

Abstract:

Three opportunities for implementation of industrial ecology principles in the real industrial production of c-Si solar cells and modules are presented in this study. It includes: material flow dematerialisation, product modification and industrial symbiosis. Firstly, it is shown how the collaboration between R&D institutes and industry helps to achieve significant reduction of material consumption by a) refuse from phosphor silicate glass cleaning process and b) shortening of silicon nitride coating production step. Secondly, it was shown how the modification of solar module design can reduce the CO2 footprint for this product and enhance waste prevention. It was achieved by implementing a frameless glass/glass solar module design instead of glass/backsheet with aluminium frame. Such a design change is possible without purchasing new equipment and without loss of main product properties like efficiency, rigidity and longevity. Thirdly, industrial symbiosis in the solar cell production is possible in such case when manufacturing waste (silicon wafer and solar cell breakage) also used solar modules are collected, sorted and supplied as raw-materials to other companies involved in the production chain of c-Si solar cells. The obtained results showed that solar cells produced from recycled silicon can have a comparable electrical parameters like produced from standard, commercial silicon wafers. The above mentioned work was performed at solar cell producer Soli Tek R&D in the frame of H2020 projects CABRISS and Eco-Solar.

Keywords: manufacturing, process optimisation, recycling, solar cells, solar modules, waste prevention

Procedia PDF Downloads 109
575 A CMOS Capacitor Array for ESPAR with Fast Switching Time

Authors: Jin-Sup Kim, Se-Hwan Choi, Jae-Young Lee

Abstract:

A 8-bit CMOS capacitor array is designed for using in electrically steerable passive array radiator (ESPAR). The proposed capacitor array shows the fast response time in rising and falling characteristics. Compared to other works in silicon-on-insulator (SOI) or silicon-on-sapphire (SOS) technologies, it shows a comparable tuning range and switching time with low power consumption. Using the 0.18um CMOS, the capacitor array features a tuning range of 1.5 to 12.9 pF at 2.4GHz. Including the 2X4 decoder for control interface, the Chip size is 350um X 145um. Current consumption is about 80 nA at 1.8 V operation.

Keywords: CMOS capacitor array, ESPAR, SOI, SOS, switching time

Procedia PDF Downloads 565
574 Multidimensional Modeling of Solidification Process of Multi-Crystalline Silicon under Magnetic Field for Solar Cell Technology

Authors: Mouhamadou Diop, Mohamed I. Hassan

Abstract:

Molten metallic flow in metallurgical plant is highly turbulent and presents a complex coupling with heat transfer, phase transfer, chemical reaction, momentum transport, etc. Molten silicon flow has significant effect in directional solidification of multicrystalline silicon by affecting the temperature field and the emerging crystallization interface as well as the transport of species and impurities during casting process. Owing to the complexity and limits of reliable measuring techniques, computational models of fluid flow are useful tools to study and quantify these problems. The overall objective of this study is to investigate the potential of a traveling magnetic field for an efficient operating control of the molten metal flow. A multidimensional numerical model will be developed for the calculations of Lorentz force, molten metal flow, and the related phenomenon. The numerical model is implemented in a laboratory-scale silicon crystallization furnace. This study presents the potential of traveling magnetic field approach for an efficient operating control of the molten flow. A numerical model will be used to study the effects of magnetic force applied on the molten flow, and their interdependencies. In this paper, coupled and decoupled, steady and unsteady models of molten flow and crystallization interface will be compared. This study will allow us to retrieve the optimal traveling magnetic field parameter range for crystallization furnaces and the optimal numerical simulations strategy for industrial application.

Keywords: multidimensional, numerical simulation, solidification, multicrystalline, traveling magnetic field

Procedia PDF Downloads 218
573 Analysis of SCR-Based ESD Protection Circuit on Holding Voltage Characteristics

Authors: Yong Seo Koo, Jong Ho Nam, Yong Nam Choi, Dae Yeol Yoo, Jung Woo Han

Abstract:

This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage.

Keywords: electro-static discharge (ESD), silicon controlled rectifier (SCR), holding voltage, protection circuit

Procedia PDF Downloads 350
572 Silicon-Photonic-Sensor System for Botulinum Toxin Detection in Water

Authors: Binh T. T. Nguyen, Zhenyu Li, Eric Yap, Yi Zhang, Ai-Qun Liu

Abstract:

Silicon-photonic-sensor system is an emerging class of analytical technologies that use evanescent field wave to sensitively measure the slight difference in the surrounding environment. The wavelength shift induced by local refractive index change is used as an indicator in the system. These devices can be served as sensors for a wide variety of chemical or biomolecular detection in clinical and environmental fields. In our study, a system including a silicon-based micro-ring resonator, microfluidic channel, and optical processing is designed, fabricated for biomolecule detection. The system is demonstrated to detect Clostridium botulinum type A neurotoxin (BoNT) in different water sources. BoNT is one of the most toxic substances known and relatively easily obtained from a cultured bacteria source. The toxin is extremely lethal with LD50 of about 0.1µg/70kg intravenously, 1µg/ 70 kg by inhalation, and 70µg/kg orally. These factors make botulinum neurotoxins primary candidates as bioterrorism or biothreat agents. It is required to have a sensing system which can detect BoNT in a short time, high sensitive and automatic. For BoNT detection, silicon-based micro-ring resonator is modified with a linker for the immobilization of the anti-botulinum capture antibody. The enzymatic reaction is employed to increase the signal hence gains sensitivity. As a result, a detection limit to 30 pg/mL is achieved by our silicon-photonic sensor within a short period of 80 min. The sensor also shows high specificity versus the other type of botulinum. In the future, by designing the multifunctional waveguide array with fully automatic control system, it is simple to simultaneously detect multi-biomaterials at a low concentration within a short period. The system has a great potential to apply for online, real-time and high sensitivity for the label-free bimolecular rapid detection.

Keywords: biotoxin, photonic, ring resonator, sensor

Procedia PDF Downloads 89
571 Analyses of Defects in Flexible Silicon Photovoltaic Modules via Thermal Imaging and Electroluminescence

Authors: S. Maleczek, K. Drabczyk, L. Bogdan, A. Iwan

Abstract:

It is known that for industrial applications using solar panel constructed from silicon solar cells require high-efficiency performance. One of the main problems in solar panels is different mechanical and structural defects, causing the decrease of generated power. To analyse defects in solar cells, various techniques are used. However, the thermal imaging is fast and simple method for locating defects. The main goal of this work was to analyze defects in constructed flexible silicon photovoltaic modules via thermal imaging and electroluminescence method. This work is realized for the GEKON project (No. GEKON2/O4/268473/23/2016) sponsored by The National Centre for Research and Development and The National Fund for Environmental Protection and Water Management. Thermal behavior was observed using thermographic camera (VIGOcam v50, VIGO System S.A, Poland) using a DC conventional source. Electroluminescence was observed by Steinbeis Center Photovoltaics (Stuttgart, Germany) equipped with a camera, in which there is a Si-CCD, 16 Mpix detector Kodak KAF-16803type. The camera has a typical spectral response in the range 350 - 1100 nm with a maximum QE of 60 % at 550 nm. In our work commercial silicon solar cells with the size 156 × 156 mm were cut for nine parts (called single solar cells) and used to create photovoltaic modules with the size of 160 × 70 cm (containing about 80 single solar cells). Flexible silicon photovoltaic modules on polyamides or polyester fabric were constructed and investigated taking into consideration anomalies on the surface of modules. Thermal imaging provided evidence of visible voltage-activated conduction. In electro-luminescence images, two regions are noticeable: darker, where solar cell is inactive and brighter corresponding with correctly working photovoltaic cells. The electroluminescence method is non-destructive and gives greater resolution of images thereby allowing a more precise evaluation of microcracks of solar cell after lamination process. Our study showed good correlations between defects observed by thermal imaging and electroluminescence. Finally, we can conclude that the thermographic examination of large scale photovoltaic modules allows us the fast, simple and inexpensive localization of defects at the single solar cells and modules. Moreover, thermographic camera was also useful to detection electrical interconnection between single solar cells.

Keywords: electro-luminescence, flexible devices, silicon solar cells, thermal imaging

Procedia PDF Downloads 290
570 Collaborative Data Refinement for Enhanced Ionic Conductivity Prediction in Garnet-Type Materials

Authors: Zakaria Kharbouch, Mustapha Bouchaara, F. Elkouihen, A. Habbal, A. Ratnani, A. Faik

Abstract:

Solid-state lithium-ion batteries have garnered increasing interest in modern energy research due to their potential for safer, more efficient, and sustainable energy storage systems. Among the critical components of these batteries, the electrolyte plays a pivotal role, with LLZO garnet-based electrolytes showing significant promise. Garnet materials offer intrinsic advantages such as high Li-ion conductivity, wide electrochemical stability, and excellent compatibility with lithium metal anodes. However, optimizing ionic conductivity in garnet structures poses a complex challenge, primarily due to the multitude of potential dopants that can be incorporated into the LLZO crystal lattice. The complexity of material design, influenced by numerous dopant options, requires a systematic method to find the most effective combinations. This study highlights the utility of machine learning (ML) techniques in the materials discovery process to navigate the complex range of factors in garnet-based electrolytes. Collaborators from the materials science and ML fields worked with a comprehensive dataset previously employed in a similar study and collected from various literature sources. This dataset served as the foundation for an extensive data refinement phase, where meticulous error identification, correction, outlier removal, and garnet-specific feature engineering were conducted. This rigorous process substantially improved the dataset's quality, ensuring it accurately captured the underlying physical and chemical principles governing garnet ionic conductivity. The data refinement effort resulted in a significant improvement in the predictive performance of the machine learning model. Originally starting at an accuracy of 0.32, the model underwent substantial refinement, ultimately achieving an accuracy of 0.88. This enhancement highlights the effectiveness of the interdisciplinary approach and underscores the substantial potential of machine learning techniques in materials science research.

Keywords: lithium batteries, all-solid-state batteries, machine learning, solid state electrolytes

Procedia PDF Downloads 27
569 Structural Characterization of the 3D Printed Silicon Carbon/Carbon Fibers Nanocomposites

Authors: Saja M. Nabat Al-Ajrash, Charles Browning, Rose Eckerle, Li Cao

Abstract:

A process that utilizes a combination of additive manufacturing (AM), a preceramic polymer, and a chopped carbon fiber precursorto fabricate Silicon Carbon/ Carbon fibers (SiC/C) composites have been developed. The study has shown a promising, cost-effective, and efficient route to fabricate complex SiC/C composites using additive manufacturing. A key part of this effort was the mapping of the material’s microstructure through the thickness of the composite. Microstructural features in the pyrolyzed composites through the successive AM layers, such as defects, crystal size and their distribution, interatomic spacing, chemical bonds, were investigated using high-resolution scanning and transmission electron microscopy. As a result, the microstructure developed in SiC/C composites after printing, cure, and pyrolysis has been successfully mapped through the thickness of the derived composites. Dense and nearly defect-free parts after polymer to ceramic conversion were observed. The ceramic matrix composite displayed three coexisting phases, including silicon carbide, silicon oxycarbide, and turbostratic carbon. Lattice fringes imaging and X-Ray Diffraction analysis showed well-defined SiC and turbostratic carbon features. The cross-sectional mapping of the printed-then-pyrolyzed structures has confirmed consistent structural and chemical features within the internal layers of the AM parts. Noteworthy, however, is that a crust-like area with high crystallinity has been observed in the first and last external layers. Not only do these crust-like regions have structural characteristics distinct from the internal layers, but they also have elemental distributions different than the internal layers.

Keywords: SiC, preceramic polymer, additive manufacturing, ceramic

Procedia PDF Downloads 49
568 Simulation of High Performance Nanoscale Partially Depleted SOI n-MOSFET Transistors

Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

Abstract:

Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, kink effect

Procedia PDF Downloads 228
567 Tensile Properties of Aluminum Silicon Nickel Iron Vanadium High Entropy Alloys

Authors: Sefiu A. Bello, Nasirudeen K. Raji, Jeleel A. Adebisi, Sadiq A. Raji

Abstract:

Pure metals are not used in most cases for structural applications because of their limited properties. Presently, high entropy alloys (HEAs) are emerging by mixing comparative proportions of metals with the aim of maximizing the entropy leading to enhancement in structural and mechanical properties. Aluminum Silicon Nickel Iron Vanadium (AlSiNiFeV) alloy was developed using stir cast technique and analysed. Results obtained show that the alloy grade G0 contains 44 percentage by weight (wt%) Al, 32 wt% Si, 9 wt% Ni, 4 wt% Fe, 3 wt% V and 8 wt% for minor elements with tensile strength and elongation of 106 Nmm-2 and 2.68%, respectively. X-ray diffraction confirmed intermetallic compounds having hexagonal closed packed (HCP), orthorhombic and cubic structures in cubic dendritic matrix. This affirmed transformation from the cubic structures of elemental constituents of the HEAs to the precipitated structures of the intermetallic compounds. A maximum tensile strength of 188 Nmm-2 with 4% elongation was noticed at 10wt% of silica addition to the G0. An increase in tensile strength with an increment in silica content could be attributed to different phases and crystal geometries characterizing each HEA.

Keywords: HEAs, phases model, aluminium, silicon, tensile strength, model

Procedia PDF Downloads 98
566 Impact of Silicon Surface Modification on the Catalytic Performance Towards CO₂ Conversion of Cu₂S/Si-Based Photocathodes

Authors: Karima Benfadel, Lamia Talbi, Sabiha Anas Boussaa, Afaf Brik, Assia Boukezzata, Yahia Ouadah, Samira Kaci

Abstract:

In order to prevent global warming, which is mainly caused by the increase in carbon dioxide levels in the atmosphere, it is interesting to produce renewable energy in the form of chemical energy by converting carbon dioxide into alternative fuels and other energy-dense products. Photoelectrochemical reduction of carbon dioxide to value-added products and fuels is a promising and current method. The objective of our study is to develop Cu₂S-based photoélectrodes, in which Cu₂S is used as a CO₂ photoelectrocatalyst deposited on nanostructured silicon substrates. Cu₂S thin layers were deposited using the chemical bath deposition (CBD) technique. Silicon nanowires and nanopyramids were obtained by alkaline etching. SEM and UV-visible spectroscopy was used to analyse the morphology and optical characteristics. By using a potentiostat station, we characterized the photoelectrochemical properties. We performed cyclic voltammetry in the presence and without CO₂ purging as well as linear voltammetry (LSV) in the dark and under white light irradiation. We perform chronoamperometry to study the stability of our photocathodes. The quality of the nanowires and nanopyramids was visible in the SEM images, and after Cu₂S deposition, we could see how the deposition was distributed over the textured surfaces. The inclusion of the Cu₂S layer applied on textured substrates significantly reduces the reflectance (R%). The catalytic performance towards CO₂ conversion of Cu₂S/Si-based photocathodes revealed that the texturing of the silicon surface with nanowires and pyramids has a better photoelectrochemical behavior than those without surface modifications.

Keywords: CO₂ conversion, Cu₂S photocathode, silicone nanostructured, electrochemistry

Procedia PDF Downloads 49
565 First Principle study of Electronic Structure of Silicene Doped with Galium

Authors: Mauludi Ariesto Pamungkas, Wafa Maftuhin

Abstract:

Gallium with three outer electrons commonly are used as dopants of silicon to make it P type and N type semiconductor respectively. Silicene, one-atom-thick silicon layer is one of emerging two dimension materials after the success of graphene. The effects of Gallium doping on electronic structure of silicine are investigated by using first principle calculation based on Density Functional Theory (DFT) calculation and norm conserving pseudopotential method implemented in ABINIT code. Bandstructure of Pristine silicene is similar to that of graphene. Effect of Ga doping on bandstructure of silicene depend on the position of Ga adatom on silicene

Keywords: silicene, effects of Gallium doping, Density Functional Theory (DFT), graphene

Procedia PDF Downloads 407
564 Microstructure and Mechanical Properties of Low Alloy Steel with Double Austenitizing Tempering Heat Treatment

Authors: Jae-Ho Jang, Jung-Soo Kim, Byung-Jun Kim, Dae-Geun Nam, Uoo-Chang Jung, Yoon-Suk Choi

Abstract:

Low alloy steels are widely used for pressure vessels, spent fuel storage, and steam generators required to withstand the internal pressure and prevent unexpected failure in nuclear power plants, which these may suffer embrittlement by high levels of radiation and heat for a long period. Therefore, it is important to improve mechanical properties of low alloy steels for the integrity of structure materials at an early stage of fabrication. Recently, it showed that a double austenitizing and tempering (DTA) process resulted in a significant improvement of strength and toughness by refinement of prior austenite grains. In this study, it was investigated that the mechanism of improving mechanical properties according to the change of microstructure by the second fully austenitizing temperature of the DAT process for low alloy steel required the structural integrity. Compared to conventional single austenitizing and tempering (SAT) process, the tensile elongation properties have improved about 5%, DBTTs have obtained result in reduction of about -65℃, and grain size has decreased by about 50% in the DAT process conditions. Grain refinement has crack propagation interference effect due to an increase of the grain boundaries and amount of energy absorption at low temperatures. The higher first austenitizing temperature in the DAT process, the more increase the spheroidized carbides and strengthening the effect of fine precipitates in the ferrite grain. The area ratio of the dimple in the transition area has increased by proportion to the effect of spheroidized carbides. This may the primary mechanisms that can improve low-temperature toughness and elongation while maintaining a similar hardness and strength.

Keywords: double austenitizing, Ductile Brittle transition temperature, grain refinement, heat treatment, low alloy steel, low-temperature toughness

Procedia PDF Downloads 486
563 Catalytic Study of Methanol-to-Propylene Conversion over Nano-Sized HZSM-5

Authors: Jianwen Li, Hongfang Ma, Weixin Qian, Haitao Zhang, Weiyong Ying

Abstract:

Methanol-to-propylene conversion was carried out in a continuous-flow fixed-bed reactor over nano-sized HZSM-5 zeolites. The HZSM-5 catalysts were synthesized with different Si/Al ratio and silicon sources, and treated with NaOH. The structural property, morphology, and acidity of catalysts were measured by XRD, N2 adsorption, FE-SEM, TEM, and NH3-TPD. The results indicate that the increment of Si/Al ratio decreased the acidity of catalysts and then improved propylene selectivity, while silicon sources had slight impact on the acidity but affected the product distribution. The desilication after alkali treatment could increase intracrystalline mesopores and enhance propylene selectivity.

Keywords: alkali treatment, HZSM-5, methanol-to-propylene, synthesis condition

Procedia PDF Downloads 187
562 Electrical Characteristics of SiON/GaAs MOS Capacitor with Various Passivations

Authors: Ming-Kwei Lee, Chih-Feng Yen

Abstract:

The electrical characteristics of liquid phase deposited silicon oxynitride film on ammonium sulfide treated p-type (100) gallium arsenide substrate were investigated. Hydrofluosilicic acid, ammonia and boric acid aqueous solutions were used as precursors. The electrical characteristics of silicon oxynitride film are much improved on gallium arsenide substrate with ammonium sulfide treatment. With post-metallization annealing, hydrogen ions can further passivate defects in SiON/GaAs film and interface. The leakage currents can reach 7.1 × 10-8 and 1.8 × 10-7 at ± 2 V. The dielectric constant and effective oxide charges are 5.6 and -5.3 × 1010 C/cm2, respectively. The hysteresis offset of hysteresis loop is merely 0.09 V.

Keywords: liquid phase deposition, SiON, GaAs, PMA, (NH4)2S

Procedia PDF Downloads 613
561 High-Temperature Tribological Characterization of Nano-Sized Silicon Nitride + 5% Boron Nitride Ceramic Composite

Authors: Mohammad Farooq Wani

Abstract:

Tribological studies on nano-sized ß-silicon nitride+5% BN were carried out in dry air at high temperatures to clarify the lack of consensus in the bibliographic data concerning the Tribological behavior of Si3N4 ceramics and effect of doped hexagonal boron nitride on coefficient of friction and wear coefficient at different loads and elevated temperatures. The composites were prepared via high energy mechanical milling and subsequent spark plasma sintering using Y2O3 and Al2O3 as sintering additives. After sintering, the average crystalline size of Si3N4 was observed to be 50 nm. Tribological tests were performed with temperature and Friction coefficients 0.16 to 1.183 and 0.54 to 0.71 were observed for Nano-sized ß-silicon nitride+5% BN composite under normal load of 10N-70 N and over high temperature range of 350 ºC-550 ºC respectively. Specific wear coefficients from 1.33x 10-4 mm3N-1m-1 to 4.42x 10-4 mm3N-1m-1 were observed for Nano-sized Si3N4 + 5% BN composite against Si3N4 ball as tribo-pair counterpart over high temperature range of 350 ºC-550 ºC while as under normal load of 10N to70N Specific wear coefficients of 6.91x 10-4 mm3N-1m-1 to 1.70x 10-4 were observed. The addition of BN to the Si3N4 composite resulted in a slight reduction of the friction coefficient and lower values of wear coefficient.

Keywords: ceramics, tribology, friction and wear, solid lubrication

Procedia PDF Downloads 348
560 Optimization of Dual Band Antenna on Silicon Substrate

Authors: Syrine lahmadi, Jamel Bel Hadj Tahar

Abstract:

In this paper, a rectangular antenna with slots integrated on silicon substrate operating in 60GHz, is studied and optimized. The effect of different parameter of the antenna (width, length, the position of the microstrip-feed line...) and the parameter of the substrate (the thickness, the dielectric constant) on gain, frequency is presented. Also, the paper presents a solution to ameliorate the bandwidth. The maximum simulated radiation gain of this rectangular dual band antenna is 5, 38 dB around 60GHz. The simulation studied id developed based on advanced design system tools. It is found that the designed antenna is 19 % smaller than a rectangular antenna with the same dimensions. This antenna with dual band can function for many communication systems as automobile or radar.

Keywords: dual band, enlargement of bandwidth, miniaturized antennas, printed antenna

Procedia PDF Downloads 326
559 Silicon Carbide (SiC) Crystallization Obtained as a Side Effect of SF6 Etching Process

Authors: N. K. A. M. Galvão, A. Godoy Jr., A. L. J. Pereira, G. V. Martins, R. S. Pessoa, H. S. Maciel, M. A. Fraga

Abstract:

Silicon carbide (SiC) is a wide band-gap semiconductor material with very attractive properties, such as high breakdown voltage, chemical inertness, and high thermal and electrical stability, which makes it a promising candidate for several applications, including microelectromechanical systems (MEMS) and electronic devices. In MEMS manufacturing, the etching process is an important step. It has been proved that wet etching of SiC is not feasible due to its high bond strength and high chemical inertness. In view of this difficulty, the plasma etching technique has been applied with paramount success. However, in most of these studies, only the determination of the etching rate and/or morphological characterization of SiC, as well as the analysis of the reactive ions present in the plasma, are lowly explored. There is a lack of results in the literature on the chemical and structural properties of SiC after the etching process [4]. In this work, we investigated the etching process of sputtered amorphous SiC thin films on Si substrates in a reactive ion etching (RIE) system using sulfur hexafluoride (SF6) gas under different RF power. The results of the chemical and structural analyses of the etched films revealed that, for all conditions, a SiC crystallization occurred, in addition to fluoride contamination. In conclusion, we observed that SiC crystallization is a side effect promoted by structural, morphological and chemical changes caused by RIE SF6 etching process.

Keywords: plasma etching, plasma deposition, Silicon Carbide, microelectromechanical systems

Procedia PDF Downloads 56
558 Tuning the Surface Roughness of Patterned Nanocellulose Films: An Alternative to Plastic Based Substrates for Circuit Priniting in High-Performance Electronics

Authors: Kunal Bhardwaj, Christine Browne

Abstract:

With the increase in global awareness of the environmental impacts of plastic-based products, there has been a massive drive to reduce our use of these products. Use of plastic-based substrates in electronic circuits has been a matter of concern recently. Plastics provide a very smooth and cheap surface for printing high-performance electronics due to their non-permeability to ink and easy mouldability. In this research, we explore the use of nano cellulose (NC) films in electronics as they provide an advantage of being 100% recyclable and eco-friendly. The main hindrance in the mass adoption of NC film as a substitute for plastic is its higher surface roughness which leads to ink penetration, and dispersion in the channels on the film. This research was conducted to tune the RMS roughness of NC films to a range where they can replace plastics in electronics(310-470nm). We studied the dependence of the surface roughness of the NC film on the following tunable aspects: 1) composition by weight of the NC suspension that is sprayed on a silicon wafer 2) the width and the depth of the channels on the silicon wafer used as a base. Various silicon wafers with channel depths ranging from 6 to 18 um and channel widths ranging from 5 to 500um were used as a base. Spray coating method for NC film production was used and two solutions namely, 1.5wt% NC and a 50-50 NC-CNC (cellulose nanocrystal) mixture in distilled water, were sprayed through a Wagner sprayer system model 117 at an angle of 90 degrees. The silicon wafer was kept on a conveyor moving at a velocity of 1.3+-0.1 cm/sec. Once the suspension was uniformly sprayed, the mould was left to dry in an oven at 50°C overnight. The images of the films were taken with the help of an optical profilometer, Olympus OLS 5000. These images were converted into a ‘.lext’ format and analyzed using Gwyddion, a data and image analysis software. Lowest measured RMS roughness of 291nm was with a 50-50 CNC-NC mixture, sprayed on a silicon wafer with a channel width of 5 µm and a channel depth of 12 µm. Surface roughness values of 320+-17nm were achieved at lower (5 to 10 µm) channel widths on a silicon wafer. This research opened the possibility of the usage of 100% recyclable NC films with an additive (50% CNC) in high-performance electronics. Possibility of using additives like Carboxymethyl Cellulose (CMC) is also being explored due to the hypothesis that CMC would reduce friction amongst fibers, which in turn would lead to better conformations amongst the NC fibers. CMC addition would thus be able to help tune the surface roughness of the NC film to an even greater extent in future.

Keywords: nano cellulose films, electronic circuits, nanocrystals and surface roughness

Procedia PDF Downloads 99
557 Sol-Gel Synthesis and Optical Characterisation of TiO2 Thin Films for Photovoltaic Application

Authors: Arabi Nour El Houda, Iratni Aicha, Talaighil Razika, Bruno Capoen, Mohamed Bouazaoui

Abstract:

TiO2 thin films have been prepared by the sol-gel dip-coating technique in order to elaborate antireflective thin films for monocrystalline silicon (mono-Si). The titanium isopropoxyde was chosen as a precursor with hydrochloric acid as a catalyser for preparing a stable solution. The optical properties have been tailored with varying the solution concentration, the withdrawn speed, and the heat-treatment. We showed that using a TiO2 single layer with 64.5 nm in thickness, heat-treated at 450°C or 300°C reduces the mono-Si reflection at a level lower than 3% over the broadband spectral do mains [669-834] nm and [786-1006] nm respectively. Those latter performances are similar to the ones obtained with double layers of low and high refractive index glasses respectively.

Keywords: thin film, dip-coating, mono-crystalline silicon, titanium oxide

Procedia PDF Downloads 407
556 A Silicon Controlled Rectifier-Based ESD Protection Circuit with High Holding Voltage and High Robustness Characteristics

Authors: Kyoung-il Do, Byung-seok Lee, Hee-guk Chae, Jeong-yun Seo Yong-seo Koo

Abstract:

In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage

Procedia PDF Downloads 369
555 Investigation of Solvent Effect on Viscosity of Lubricant in Disposable Medical Devices

Authors: Hamed Bagheri, Seyd Javid Shariati

Abstract:

The effects of type and amount of solvent on lubricant which is used in disposable medical devices are investigated in this article. Two kinds of common solvent, n-Hexane and n-Heptane, are used. The mechanical behavior of syringe has shown that n-Heptane has better mixing ratio and also more effective spray process in the barrel of syringe than n-Hexane because of similar solubility parameter to silicon oil. The results revealed that movement of plunger in the barrel increases when pure silicone is used because non-uniform film is created on the surface of barrel, and also, it seems that the form of silicon is converted from oil to gel due to sterilization process. The results showed that the convenient mixing ratio of solvent/lubricant oil is 80/20.

Keywords: disposal medical devices, lubricant oil, solvent effect, solubility parameter

Procedia PDF Downloads 202
554 Study of Mechanical Properties of Large Scale Flexible Silicon Solar Modules on the Various Substrates

Authors: M. Maleczek, Leszek Bogdan, Kazimierz Drabczyk, Agnieszka Iwan

Abstract:

Crystalline silicon (Si) solar cells are the main product in the market among the various photovoltaic technologies concerning such advantages as: material richness, high carrier mobilities, broad spectral absorption range and established technology. However, photovoltaic technology on the stiff substrates are heavier, more fragile and less cost-effective than devices on the flexible substrates to be applied in special applications. The main goal of our work was to incorporate silicon solar cells into various fabric, without any change of the electrical and mechanical parameters of devices. This work is realized for the GEKON project (No. GEKON2/O4/268473/23/2016) sponsored by The National Centre for Research and Development and The National Fund for Environmental Protection and Water Management. In our work, the polyamide or polyester fabrics were used as a flexible substrate in the created devices. Applied fabrics differ in tensile and tear strength. All investigated polyamide fabrics are resistant to weathering and UV, while polyester ones is resistant to ozone, water and ageing. The examined fabrics are tight at 100 cm water per 2 hours. In our work, commercial silicon solar cells with the size 156 × 156 mm were cut into nine parts (called single solar cells) by diamond saw and laser. Gap and edge after cutting of solar cells were checked by transmission electron microscope (TEM) to study morphology and quality of the prepared single solar cells. Modules with the size of 160 × 70 cm (containing about 80 single solar cells) were created and investigated by electrical and mechanical methods. Weight of constructed module is about 1.9 kg. Three types of solar cell architectures such as: -fabric/EVA/Si solar cell/EVA/film for lamination, -backsheet PET/EVA/Si solar cell/EVA/film for lamination, -fabric/EVA/Si solar cell/EVA/tempered glass, were investigated taking into consideration type of fabric and lamination process together with the size of solar cells. In investigated devices EVA, it is ethylene-vinyl acetate, while PET - polyethylene terephthalate. Depend on the lamination process and compatibility of textile with solar cell an efficiency of investigated flexible silicon solar cells was in the range of 9.44-16.64 %. Multi folding and unfolding of flexible module has no impact on its efficiency as was detected by Instron equipment. Power (P) of constructed solar module is 30 W, while voltage about 36 V. Finally, solar panel contains five modules with the polyamide fabric and tempered glass will be produced commercially for different applications (dual use).

Keywords: flexible devices, mechanical properties, silicon solar cells, textiles

Procedia PDF Downloads 150
553 A Study of ZY3 Satellite Digital Elevation Model Verification and Refinement with Shuttle Radar Topography Mission

Authors: Bo Wang

Abstract:

As the first high-resolution civil optical satellite, ZY-3 satellite is able to obtain high-resolution multi-view images with three linear array sensors. The images can be used to generate Digital Elevation Models (DEM) through dense matching of stereo images. However, due to the clouds, forest, water and buildings covered on the images, there are some problems in the dense matching results such as outliers and areas failed to be matched (matching holes). This paper introduced an algorithm to verify the accuracy of DEM that generated by ZY-3 satellite with Shuttle Radar Topography Mission (SRTM). Since the accuracy of SRTM (Internal accuracy: 5 m; External accuracy: 15 m) is relatively uniform in the worldwide, it may be used to improve the accuracy of ZY-3 DEM. Based on the analysis of mass DEM and SRTM data, the processing can be divided into two aspects. The registration of ZY-3 DEM and SRTM can be firstly performed using the conjugate line features and area features matched between these two datasets. Then the ZY-3 DEM can be refined by eliminating the matching outliers and filling the matching holes. The matching outliers can be eliminated based on the statistics on Local Vector Binning (LVB). The matching holes can be filled by the elevation interpolated from SRTM. Some works are also conducted for the accuracy statistics of the ZY-3 DEM.

Keywords: ZY-3 satellite imagery, DEM, SRTM, refinement

Procedia PDF Downloads 315
552 Structural Determination of Nanocrystalline Si Films Using Raman Spectroscopy and the Ellipsometry

Authors: K. Kefif, Y. Bouizem, A. Belfedal, D. J. Sib, K. Zellama, l. Chahed

Abstract:

Hydrogenated microcrystalline silicon (μc-Si:H) thin films were prepared by radio frequency magnetron sputtering at relatively low growth temperatures (Ts=100 °C). The films grown on glass substrate in order to use the new generation of substrates sensitive to elevated temperatures. Raman spectroscopy was applied to investigate the effect of the argon gas diluted in hydrogen, on the structural properties and the evolution of the micro structure in the films. Raman peak position, intensity and line width were used to characterize the quality and the percentage of the crystallites in the films. The results of this investigation suggest the existence of a threshold dilution around a gas mixture of argon (40%) and hydrogen (60%) for which the crystallization occurs, even at low deposition temperatures. The difference between the amorphous and the crystallized structures is well confirmed by spectroscopic ellipsometry (SE) technique.

Keywords: Silicon, Thin films, Structural properties, Raman spectroscopy, Ellipsometry

Procedia PDF Downloads 270
551 Amorphous Silicon-Based PINIP Structure for Human-Like Photosensor

Authors: Sheng-Chuan Hsu

Abstract:

Because the existing structure of ambient light sensor is most silicon photodiode device, it is extremely sensitive in the red and infrared regions. Even though the IR-Cut filter had added, it still cannot completely eliminate the influence of infrared light, and the spectral response of infrared light was stronger than that of the human eyes. Therefore, it is not able to present the vision spectrum of the human eye reacts with the ambient light. Then it needs to consider that the human eye feels the spectra that show significant differences between light and dark place. Consequently, in practical applications, we must create and develop advanced device of human-like photosensor which can solve these problems of ambient light sensor and let cognitive lighting system to provide suitable light to achieve the goals of vision spectrum of human eye and save energy.

Keywords: ambient light sensor, vision spectrum, cognitive lighting system, human eye

Procedia PDF Downloads 311
550 Application to Molecular Electronics of Thin Layers of Organic Materials

Authors: M. I. Benamrani, H. Benamrani

Abstract:

In the research to replace silicon and other thin-film semiconductor technologies and to develop long-term technology that is environmentally friendly, low-cost, and abundant, there is growing interest today given to organic materials. Our objective is to prepare polymeric layers containing metal particles deposited on a surface of semiconductor material which can have better electrical properties and which could be applied in the fields of nanotechnology as an alternative to the existing processes involved in the design of electronic circuits. This work consists in the development of composite materials by complexation and electroreduction of copper in a film of poly (pyrrole benzoic acid). The deposition of the polymer film on a monocrystalline silicon substrate is made by electrochemical oxidation in an organic medium. The incorporation of copper particles into the polymer is achieved by dipping the electrode in a solution of copper sulphate to complex the cupric ions, followed by electroreduction in an aqueous solution to precipitate the copper. In order to prepare the monocrystalline silicon substrate as an electrode for electrodeposition, an in-depth study on its surface state was carried out using photoacoustic spectroscopy. An analysis of the optical properties using this technique on the effect of pickling using a chemical solution was carried out. Transmission-photoacoustic and impedance spectroscopic techniques give results in agreement with those of photoacoustic spectroscopy.

Keywords: photoacoustic, spectroscopy, copper sulphate, chemical solution

Procedia PDF Downloads 61
549 Simulation of Mid Infrared Supercontinuum Generation in Silicon Germanium Photonic Waveguides for Gas Spectroscopy

Authors: Proficiency Munsaka, Peter Baricholo, Erich Rohwer

Abstract:

Pulse evolutions along the 5 cm long, 6.0 ×4.2 μm² cross-section silicon germanium (SiGe) photonic waveguides were simulated and compared with experiments. Simulations were carried out by solving a generalized nonlinear Schrodinger equation (GNLSE) for an optical pulse evolution along the length of the SiGe photonic waveguides by the split-step Fourier method (SSFM). The solution obtained from the SSFM gave the pulse envelope in both time and spectral domain calculated at each distance step along the propagation direction. The SiGe photonic waveguides were pumped in an anomalous group velocity dispersion (GVD) regime using a 4.7 μm, 210 fs femtosecond laser to produce a significant supercontinuum (SC). The simulated propagation of ultrafast pulse along the SiGe photonic waveguides produced an SC covering the atmospheric window (2.5-8.5 μm) containing the molecular fingerprints for important gases. Thus, the mid-infrared supercontinuum generation in SiGe photonic waveguides system can be commercialized for gas spectroscopy for detecting gases that include CO₂, CH₄, H₂O, SO₂, SO₃, NO₂, H₂S, CO, and NO at trace level using absorption spectroscopy technique. The simulated profile evolutions are spectrally and temporally similar to those obtained by other researchers. Obtained evolution profiles are characterized by pulse compression, Soliton fission, dispersive wave generation, stimulated Raman Scattering, and Four Wave mixing.

Keywords: silicon germanium photonic waveguide, supercontinuum generation, spectroscopy, mid infrared

Procedia PDF Downloads 99