Search results for: parasitic capacitance

Authors: S. Yakut, D. Deger, K. Ulutas, D. Bozoglu

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Plasma poly(ethylene oxide) (pPEO) thin films were deposited between Aluminum (Al) electrodes on glass substrates by plasma assisted physical vapor deposition (PAPVD). The deposition was operated inside Argon plasma under 10⁻³ Torr and the thicknesses of samples were determined as 20, 100, 250, 500 nm. The plasma was produced at 5 W by magnetron connected to RF power supply. The capacitance C and dielectric loss factor tan δ were measured by Novovontrol Alpha-A high frequency empedance analyzer at freqquency and temperature intervals of 0,1 Hz and 1MHz, 193-353K, respectively. AC conductivity was derived from these values. AC conductivity results exhibited three different conductivity regions except for 20 nm. These regions can be classified as low, mid and high frequency regions. Low frequency region is observed at around 10 Hz and 300 K while mid frequency region is observed at around 1 kHz and 300 K. The last one, high frequency region, is observed at around 1 kHz and 200 K. There are some coinciding definitions for conduction regions, because these regions shift depending on temperature. Low frequency region behaves as DC-like conductivity while mid and high frequency regions show conductivities corresponding to mechanisms such as classical hopping, tunneling, etc. which are observed for amorphous materials. Unlike other thicknesses, for 20 nm sample low frequency region can not be detected in the investigated freuency range. It is thought that this is arised because of the presence of dead layer behavior.

Keywords: plasma polymers, dead layer, dielectric spectroscopy, AC conductivity

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Authors: Behnoush Dousti, Ye Choi, Gil S. Lee

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Microsupercapacitors (MScs) are known as the future of miniaturized energy sources that can be coupled to a battery to deliver stable and constant energy to microelectronics. Among all their counterparts, electrochemical microsupercapacitor have drawn the most research attention due to their higher power density and long cycle life. Designing the microstructure and choosing the electroactive materials are two significant factors that greatly affect the performance of the device. Here, we report successful fabrication and characterization of a microsupercapacitor with interdigitated structure based on Carbon nanotube sheets (CNT sheet). Novel structure of highly aligned CNT sheet as the electrode materials which also offers excellent conductivity and large surface area along with doping with nitrogen, enabled us to develop a device with serval order of magnitude higher electrochemical performance than the pristine CNT in aqueous electrolyte including high specific capacitance and rate capabilities and excellent cycle life over 10000 cycles. Geometric parameters such as finger width and gap size were also studied and it was shown the device performance is much depended on them. Results of this study confirms the potential of CNT sheet for future energy storage devices.

Keywords: carbon nanotube, energy storage systems, microsupercapacitor, nitrogen doping

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Authors: Radia Bagtache, Karima Boudjedien, Ahmed Malek Djaballah, Mohamed Trari

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The compounds with a spinel structure have received special attention because of their numerous applications in electronics, magnetism, catalysis, electrocatalysis, photocatalysis, etc. Among these oxides, CuCo₂O₄ was selected because of its optimal band gap, very close to the ideal value for solar devices, its low cost, and a potential candidate in the field of energy storage. Herein, we reported the junction Ag/CuCo₂O₄ (5/95 % wt.) prepared by co-precipitation, characterized physically and photo electrochemically. Moreover, its performance was evaluated for the oxidation of methyl orange (MO) under solar light. The X-ray diffraction exhibited narrow peaks ascribed to the spinel CuCo₂O₄ and Ag. The SEM analysis displayed grains with regular shapes. The band gap of CuCo₂O₄ (1.38 eV) was deducted from the diffuse reflectance, and this value decreased down to 1.15 eV due to the synergy effect in the junction. The current-potential (J-E) curve plotted in Na₂SO₄ electrolyte showed a medium hysteresis, characteristic of good chemical stability. The capacitance-2 – potential (C⁻² – E) graph displayed that the spinel behaves as a p-type semiconductor, a property supported by chrono-amperometry. The conduction band, located at 4.05 eV (-0.94 VNHE), was made up of Co³⁺: 3d orbital. The result showed a total discoloration of MO after 2 h of illumination under solar light.

Keywords: junction Ag/CuCo₂O₄, semiconductor, environment, sunlight, characterization, depollution

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Authors: Gabriel Wosiak, Dyovani Coelho, Evaldo B. Carneiro-Neto, Ernesto C. Pereira, Mauro C. Lopes

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In this work, the theoretical and experimental effects of induced charging currents on fast-scan cyclic voltammetry (FSCV) are investigated. Induced charging currents arise from the effect of ohmic drop in electrochemical systems, which depends on the presence of an uncompensated resistance. They cause the capacitive contribution to the total current to be different from the capacitive current measured in the absence of electroactive species. The paper shows that the induced charging current is relevant when the capacitive current magnitude is close to the total current, even for systems with low time constant. In these situations, the conventional background subtraction method may be inaccurate. A method is developed that separates the faradaic and capacitive currents by using a combination of voltametric experimental data and finite element simulation, by the obtention of a potential-dependent capacitance. The method was tested in a standard electrochemical cell with Platinum ultramicroelectrodes, in different experimental conditions as well in previously reported data in literature. The proposed method allows the real capacitive current to be separated even in situations where the conventional background subtraction method is clearly inappropriate.

Keywords: capacitive current, fast-scan cyclic voltammetry, finite-element method, electroanalysis

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Authors: Yung-Shan Lu, Chia-Fone Lee, Shang-Hsuan Li, Chien-Hao Liu

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Recently, various bioelectronic devices have been developed for neurologic disease treatments via electro-stimulations such as cochlear implants and retinal prosthesis. Since the electric signal needs electrodes to be transmitted to an organism, electrodes play an important role of stimulations. The materials of stimulation electrodes affect the efficiency of the delivered currents. The higher the efficiency of the electrodes, the lower the threshold current can be used to stimulate the organism which minimizes the potential damages to the adjacent tissues. In this study, we proposed a biocompatible composite electrode composed of high-charge-capacity iridium oxide (IrOₓ) film for a bone-guide extra-cochlear implant. IrOₓ was exploited to decrease the threshold current due to its high capacitance and low impedance. The IrOₓ electrode was fabricated via microelectromechanical systems (MEMS) photolithography and examined with in-vivo tests with guinea pigs. Based on the measured responses of brain waves to sound, the results demonstrated that IrOₓ electrodes have a lower threshold current compared with the Platinum (Pt) electrodes. The research results are expected to be beneficial for implantable and biocompatible electrodes for electrical stimulations.

Keywords: cochlear implants, electrode, electrical stimulation, iridium oxide

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Authors: Muhammad Zaheer Awan, Adnan Qadir, Zeeshan Anjum

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Housefly, Musca domestica Linnaeus is ubiquitous and hazardous for Homo sapiens and livestock in sundry venerations. Musca domestica cart 100 different pathogens, such as typhoid, salmonella, bacillary dysentery, tuberculosis, anthrax and parasitic worms. The flies in rural areas usually carry more pathogens. Houseflies feed on liquid or semi-liquid substances besides solid materials which are softened by saliva. Neem botanically known as Azadirachta indica belongs to the family Meliaceae and is an indigenous tree to Pakistan. The neem tree is also one such tree which has been revered by the Pakistanis and Kashmiris for its medicinal properties. Present study showed neem seed extract has potentially toxic ability that affect Total Haemocyte Count (THC) and Differential Haemocytes Count (DHC) in insect’s blood cells, of the housefly. A significant variation in haemolymph density was observed just after application, 30 minutes and 60 minutes post treatment in term of THC and DHC in comparison with novastar. The study strappingly acclaim use of neem seed extract as insecticide as compare to artificial insecticides.

Keywords: neem, Azadirachta indica, Musca domestica, differential haemocyte count (DHC), total haemocytes count (DHC), novastar

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Authors: Charmaine Lamiel, Van Hoa Nguyen, Marjorie Baynosa, Jae-Jin Shim

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The depletion of non-renewable sources had led to the continuous development of various energy storage systems in order to cope with the world’s demand in energy. Supercapacitors have attracted considerable attention because they can store more energy than conventional capacitors and have higher power density than batteries. The combination of carbon-based material and metal chalcogenides are now being considered in response to the search for active electrode materials exhibiting high electrochemical performance. In this study, a hierarchical mesoporous carbon sphere@nickel cobalt sulfide (CS@Ni-Co-S) core-shell was synthesized using a simple hydrothermal method. The CS@Ni-Co-S core-shell microstructures exhibited a high capacitance of 724.4 F g−1 at 2 A g−1 in a 6 M KOH electrolyte. Good specific retention of 86.1% and high Coulombic efficiency of 97.9% was obtained after 2000 charge-discharge cycles. The electrode exhibited a high energy density of 58.0 Wh kg−1 (1440 W kg−1) and high power density of 7200 W kg−1 (34.2 Wh kg−1). The reaction involved green synthesis without further sulfurization or post-heat treatment. Through this study, a cost-effective and facile synthesis of CS@Ni-Co-S as an active electrode showed favorable electrochemical performance.

Keywords: carbon sphere, electrochemical, hydrothermal, nickel cobalt sulfide, supercapacitor

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Authors: Lourdes De Fátima Ibañez Valdés, Humberto Foyaca Sibat

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Background: Cysticercosis (Ct) is a preventable and eradicable zoonotic parasitic disease secondary to an infection caused by the larva form of pig tapeworm Taenia solium (Ts), which is mainly seen in people living in developing countries. However, the number of carriers in developed countries increases gradually due to globalization and uncontrolled migration. In this study, we look for the role played by autoimmune innate microglia (Mg) in the pathogenesis of intraparenchymal/subarachnoid neurocysticercosis. (I-SNCC)/ischemic -reperfusion injury (IRI). After reviewing this issue, we formulate some hypotheses regarding to the role of Mg in this process and deliver some novel therapeutic approaches for I- SNCC/IRI. Method: We searched the medical literature comprehensively, looking for published medical subject heading (MeSH) terms like "neurocysticercosis"; "pathogenesis of neurocysticercosis"; "comorbidity in NCC"; OR "I-SNCC"; OR "IRI;" OR "NCC/IS;" OR "Treatment of I-SNCC/IRI;" OR “MPC;” OR “ischemic stroke” OR “subarachnoid neurocysticercosis” OR “racemose neurocysticercosis” Results: All selected manuscripts were peer-reviewed, and we did not find publications related to Mga/I-SNCC/IRI. Comments and concluding remarks: We hypothesized the role played by Mg on the pathogenesis of I-SNCC the role of Mg during the colloid/nodular stage of INCC and racemose NCC and an associated ischemic stroke based on the well-known benefits of Mg polarization.

Keywords: Cysticercosis, neurocysticercosis, microglia activation, apoptosis, pyroptosis, necroptosis, PANoptosis, PANoptosome, infectious vasculitis, ischemic stroke, vascular dementia, racemose neurocysticercosis, subarachnoid neurocysticercosis, extra parenchymal neurocysticercosis

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Authors: A. N. Fouda

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A novel well identified hexagonal graphene oxide (GO) nano-sheets were synthesized using modified Hummer method. Low temperature thermal reduction at 350°C in air ambient was performed. After thermal reduction, typical few layers of thermal reduced GO (TRGO) with dimension of few hundreds nanometers were observed using high resolution transmission electron microscopy (HRTEM). GO has a lot of structure models due to variation of the preparation process. Determining the atomic structure of GO is essential for a better understanding of its fundamental properties and for realization of the future technological applications. Structural characterization was identified by x-ray diffraction (XRD), Fourier transform infra-red spectroscopy (FTIR) measurements. A comparison between exper- imental and theoretical IR spectrum were done to confirm the match between experimentally and theoretically proposed GO structure. Partial overlap of the experimental IR spectrum with the theoretical IR was confirmed. The electrochemical properties of TRGO nano-sheets as electrode materials for supercapacitors were investigated by cyclic voltammetry and electrochemical impedance spectroscopy (EIS) measurements. An enhancement in supercapacitance after reduction was confirmed and the area of the CV curve for the TRGO electrode is larger than those for the GO electrode indicating higher specific capacitance which is promising in super-capacitor applications

Keywords: hexagonal graphene oxide, thermal reduction, cyclic voltammetry

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Authors: Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza

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SOI TRI GATE FinFET transistors have emerged as novel devices due to its simple architecture and better performance: better control over short channel effects (SCEs) and reduced power dissipation due to reduced gate leakage currents. As the oxide thickness scales below 2 nm, leakage currents due to tunneling increase drastically, leading to high power consumption and reduced device reliability. Replacing the SiO2 gate oxide with a high-κ material allows increased gate capacitance without the associated leakage effects. In this paper, SOI TRI-GATE FinFET structure with use of high K dielectric materials (HfO2) and SiO2 dielectric are simulated using the 3-D device simulator Devedit and Atlas of TCAD Silvaco. The simulated results exhibits significant improvements in the performances of SOI TRI GATE FinFET with gate oxide HfO2 compared with conventional gate oxide SiO2 for the same structure. SOI TRI-GATE FinFET structure with the use of high K materials (HfO2) in gate oxide results into the increase in saturation current, threshold voltage, on-state current and Ion/Ioff ratio while off-state current, subthreshold slope and DIBL effect are decreased.

Keywords: technology SOI, short-channel effects (SCEs), multi-gate SOI MOSFET, SOI-TRI Gate FinFET, high-K dielectric, Silvaco software

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Authors: Mudavath Raju, Bhaskar Gugulothu, B. Rajendra Naik

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The rapid advances in Very Large Scale Integration (VLSI) technology has resulted in the reduction of minimum feature size to sub-quarter microns and switching time in tens of picoseconds or even less. As a result, the degradation of high-speed digital circuits due to signal integrity issues such as coupling effects, clock feedthrough, crosstalk noise and delay uncertainty noise. Crosstalk noise in VLSI interconnects is a major concern and reduction in VLSI interconnect has become more important for high-speed digital circuits. It is the most effectively considered in Deep Sub Micron (DSM) and Ultra Deep Sub Micron (UDSM) technology. Increasing spacing in-between aggressor and victim line is one of the technique to reduce the crosstalk. Guard trace or shield insertion in-between aggressor and victim is also one of the prominent options for the minimization of crosstalk. In this paper, far end crosstalk noise is estimated with mutual inductance and capacitance RLC interconnect model. Also investigated the extent of crosstalk in capacitive and inductively coupled interconnects to minimizes the same through shield insertion technique.

Keywords: VLSI, interconnects, signal integrity, crosstalk, shield insertion, guard trace, deep sub micron

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Authors: G. Nyongombe, Guy L. Kabongo, B. M. Mothudi, M. S. Dhlamini

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A series of Transition Metals Oxides (TMOs) doped graphene were synthesized and successfully used as supercapacitor electrode materials. The as-synthesized materials exhibited exceptional electrochemical properties owing to the combined properties of its constituents; high surface area and good conductivity were achieved. Several analytical characterization techniques were employed to investigate the morphology, crystal structure atomic arrangement and elemental chemical state in the materials for which scanning electron microscopy (SEM), X-ray diffraction (XRD) and X-ray photoelectron spectroscopy (XPS) were conducted, respectively. Moreover, the electrochemical properties of the as-synthesized materials were examined by performing cyclic voltammetry (CV), galvanostatic charge-discharge (GCD) and electrochemical impedance spectroscopy (EIS) measurements. Furthermore, the effect of doping concentration on the interlayer distance of the graphene materials and the charge transfer resistance are investigated and correlated to the exceptional current density which was multiplied by a factor of ~80 after TMOs doping in graphene. Finally, the resulting high capacitance obtained confirms the contribution of grapheme exceptional electronic conductivity and large surface area on the electrode materials. Such good-performing electrode materials are highly promising for supercapacitors and other energy storage devices.

Keywords: energy density, graphene, supercapacitors, TMOs

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Authors: Jiajia Yao, Guanlin Wu, Fang Liu, Junshuai Xue, Yue Hao

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As the production process of self-standing GaN substrates evolves, the commercialization of low dislocation density, large-scale, semi-insulating self-standing GaN substrates is gradually becoming a reality. This advancement has given rise to increased interest in GaN materials' homoepitaxial technology. However, at the homoepitaxial interface, there are considerable concentrations of impurity elements, including C, Si, and O, which generate parasitic leakage channels at the re-growth junction. This phenomenon results in leaked HEMTs that prove difficult to switch off, rendering them effectively non-functional. The emergence of leakage channels can also degrade the high-frequency properties and lower the power devices' breakdown voltage. In this study, the uniform epitaxy of AlGaN/GaN heterojunction with high electron mobility was accomplished through the surface treatment of the GaN substrates prior to growth and the design of the AlN isolation layer structure. By employing a procedure combining gallium atom in-situ cleaning and plasma nitridation, the C and O impurity concentrations at the homoepitaxial interface were diminished to the scale of 10¹⁷ cm-³. Additionally, the 1.5 nm nitrogen-rich AlN isolation layer successfully prevented the diffusion of Si impurities into the GaN channel layer. The result was an AlGaN/GaN heterojunction with an electron mobility of 1552 cm²/Vs and an electron density of 1.1 × 10¹³ cm-² at room temperature, obtained on a Fe-doped semi-insulating GaN substrate.

Keywords: MBE, AlGaN/GaN, homogenerous epitaxy, HEMT

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Authors: Jiajia Yao, Guanlin Wu, Fang Liu, Junshuai Xue, Yue Hao

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This study reports on the epitaxial growth of a GaN-based resonant tunneling diode (RTD) structure with stable and repeatable double negative differential resistance (NDR) characteristics at room temperature on a c-plane GaN-on-sapphire template using plasma-assisted molecular beam epitaxy (PA-MBE) technology. In this structure, two independent AlN/GaN RTDs are epitaxially connected in series in the vertical growth direction through a silicon-doped GaN layer. As the collector electrode bias voltage increases, the two RTDs respectively align the ground state energy level in the quantum well with the 2DEG energy level in the emitter accumulation well to achieve quantum resonant tunneling and then reach the negative differential resistance (NDR) region. The two NDR regions exhibit similar peak current densities and peak-to-valley current ratios, which are 230 kA/cm² and 249 kA/cm², 1.33 and 1.38, respectively, for a device with a collector electrode mesa diameter of 1 µm. The consistency of the NDR is much higher than the results of on-chip discrete RTD device interconnection, resulting from the smaller chip area, fewer interconnect parasitic parameters, and less process complexity. The methods and results presented in this paper show the brilliant prospects of GaN RTDs in the development of multi-value logic digital circuits.

Keywords: MBE, AlN/GaN, RTDs, double NDR

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Authors: M. H. Aldahrob, A. Kokce, S. Altindal, H. E. Lapa

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In order to obtain the detailed information about the effect of (Zn-doped PVA) interfacial layer, surface states (Nss) and series resistance (Rs) on electrical characteristics, both Au/n- type 4H-SiC (MS) with and without (Zn doped PVA) interfacial layer were fabricated to compare. The main electrical parameters of them were investigated using forward and reverse bias current-voltage (I-V), capacitance-voltage (C-V) and conductance –voltage (G/W –V) measurements were performed at room temperature. Experimental results show that the value of ideality factor (n), zero –bias barrier height (ΦBo), Rs, rectifier rate (RR=IF/IR) and the density of Nss are strong functions interfacial layer and applied bias voltage. The energy distribution profile of Nss was obtained from forward bias I-V data by taking into account voltage dependent effective BH (ΦBo) and ideality factor (n(V)). Voltage dependent profile of Rs was also obtained both by using Ohm’s law and Nicollian and Brew methods. The other main diode parameters such as the concentration of doping donor atom (ND), Fermi energy level (EF).BH (ΦBo), depletion layer with (WD) were obtained by using the intercept and slope of the reverse bias C-2 vs V plots. It was found that (Zn-doped PVA) interfacial layer lead to a quite decrease in the values Nss, Rs and leakage current and increase in shunt resistance (Rsh) and RR. Therefore, we can say that the use of thin (Zn-doped PVA) interfacial layer can quite improved the performance of MS structure.

Keywords: interfacial polymer layer, thickness dependence, electric and dielectric properties, series resistance, interface state

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Authors: K. Saravanan, K. A.Rameshkumar, P. Maadeswaran

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The depletion of fossil resources and the rise in global temperatures are two of the most important concerns we confront today. There are numerous renewable energy sources like solar power, tidal power, wind energy, radiant energy, hydroelectricity, geothermal energy, and biomass available to generate the needed energy demand. Engineers and scientists around the world are facing a massive barrier in the development of storage technologies for the energy developed from renewable energy sources. The development of electrochemical capacitors as a future energy storage technology is at the forefront of current research and development. This is due to the fact that the electrochemical capacitors have a significantly higher energy density, a faster charging-discharging rate, and a longer life span than capacitors, and they also have a higher power density than batteries, making them superior to both. In this research, electrochemical capacitors using the Nd2O3/Mn3O4/ N-rGO electrode material is chosen since the of hexagonal and tetragonal crystal structures of Nd2O3 and Mn3O4 and also has cycling stability of 68% over a long time at 50mVs-1 and a high coulombic efficiency of 99.64% at 5 Ag-1. This approach may also be used to create novel electrode materials with improved electrochemical and cyclic stability for high-performance supercapacitors.

Keywords: Nd2O3/Mn3O4/N-rGO, nanocomposites, hydrothermal method, electrode material, specific capacitance, use of supercapacitors

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Authors: Aliyu B. Mustapha, Poul A. Gida

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Pot experiment was conducted at the landscape unit of Modibbo Adama University of Technology, Yola in 2015 and 2016 to determine the effect of some chemicals namely glyphosate, salt and detergent on Golden dodder (Cuscuta campestris Yunk). The experiment was laid in a completely randomized design (CRD) with three replications. The treatments include the following: glyphosate-T0= (control),(Og a.i/ha-1) T1=35g a.i/ha-1, T2=70g a.i/ha-1, T3=105g a.i/ha-1, T4=140 a.i/ha-1 and T5=175g a.i/ha-1: Salt (T0=control O mole/ha-1 T1=1mole/ha-1 T2=2mole/ha-1, T3=3mole/ha-1 , T4=4mole/ha-1 and T5=5mole/ha-1:washing detergent T0=Og/ha-1(control), T1=30ml detergent +70ml distilled water T2=45ml detergent+65ml distilled water T3=60ml detergent+40ml distilled water, T4=75ml detergent+25ml distilled water and T5=90ml detergent +10mldistilled water, the treatments were replicated three times. Data were collected include: plant height, number of leaves, leaf area, leaf area index and Cuscuta cover score at 3,6,9and 12 weeks after sprouting(WAS). Biomas of Vitex was also collected at the end of the experiment. Data collected were analyzed using software Genstat version 8.0. Results showed that glyphosate gave the least Cuscuta cover score and the tallest Vitex plant. However, detergent mildly controlled Cuscuta, while salt has no effect on Cuscuta campestris indicating that glyphosate could be used in the control of parasitic dodder (Cuscuta campestris) on Vitex plant.

Keywords: chemical, control, dudder, Vitex

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Authors: Sandor Levai, Valentin Juhasz, Miklos Gasz

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Rising damp is an extremely complex phenomenon that is of great practical interest to the field of building conservation due to the irreversible damages it can make to old and historic structures. The electrical effects occurring in damp masonry have been scarcely researched and are a largely unknown aspect of rising damp. Present paper describes the typical electrical patterns occurring in porous brickwork during a wetting and drying cycle. It has been found that in contrast with dry masonry, where electrical phenomena are virtually non-existent, damp masonry exhibits a wide array of electrical effects. Long-term real-time measurements performed in the lab on small-scale brick structures, using an array of embedded micro-sensors, revealed significant voltage, current, capacitance and resistance variations which can be linked to the movement of moisture inside porous materials. The same measurements performed on actual old buildings revealed a similar behaviour, the electrical effects being more significant in areas of the brickwork affected by rising damp. Understanding these electrical phenomena contributes to a better understanding of the driving mechanisms of rising damp, potentially opening new avenues of dealing with it in a less invasive manner.

Keywords: brick masonry, electrical phenomena in damp brickwork, porous building materials, rising damp, spontaneous electrical potential, wetting-drying cycle

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Authors: Asma Perveen, M. P. Jahan

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Ni alloys have managed to cover wide range of applications such as automotive industries, oil gas industries, and aerospace industries. However, these alloys impose challenges while using conventional machining technologies. On the other hand, Micro-Electro-Discharge machining (micro-EDM) is a non-conventional machining method that uses controlled sparks energy to remove material irrespective of the materials hardness. There has been always a huge interest from the industries for developing optimum methodology and parameters in order to enhance the productivity of micro-EDM in terms of reducing machining time and tool wear for different alloys. Therefore, the aims of this study are to investigate the effects of the micro-EDM process parameters, in order to find their optimal values. The input process parameters include voltage, capacitance, and electrode rotational speed, whereas the output parameters considered are machining time, entrance diameter of hole, overcut, tool wear, and crater size. The surface morphology and element characterization are also investigated with the use of SEM and EDX analysis. The experimental result indicates the reduction of machining time with the increment of discharge energy. Discharge energy also contributes to the enlargement of entrance diameter as well as overcut. In addition, tool wears show reduction with the increase of discharge energy. Moreover, crater size is found to be increased in size along with the increment of discharge energy.

Keywords: micro holes, micro EDM, Ni Alloy, discharge energy

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Authors: Muhammad Hassan, Kemal Celebi

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Developing a highly efficient electrochromic energy storage device with sufficient color fluctuation and significant electrochemical performance is highly desirable for practical energy-saving applications. Here, to achieve a highly stable material with a large electrochemical storage capacity, a W₁₈O₄₉ NW/Ti₃C₂Tₓ composite has been fabricated and deposited on a pre-assembled Ag and W₁₈O₄₉ NW conductive network by Langmuir-Blodgett technique. The resulting hybrid electrode composed of 15 layers of W₁₈O₄₉ NW/Ti₃C₂Tₓ exhibits an areal capacitance of 125 mF/cm², with a fast and reversible switching response. An optical modulation of 98.2% can be maintained at a current density of 5 mAcm⁻². Using this electrode, we fabricated a bifunctional symmetric electrochromic supercapacitor device having an energy density of 10.26 μWh/cm² and a power density of 0.605 mW/cm², with high capacity retention and full columbic efficiency over 4000 charge-discharge cycles. Meanwhile, the device displays remarkable electrochromic characteristics, including fast switching time (5 s for coloring and 7 s for bleaching) and a significant coloration efficiency of 116 cm²/C with good optical modulation stability. In addition, the device exhibits remarkable mechanical flexibility and fast switching while being stable over 100 bending cycles, which is promising for real-world applications.

Keywords: MXene, nanowires, supercapacitor, ion diffusion, electrochromic, coloration efficiency

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Authors: Ahmed Boutejdar, Bishoy I. Halim, Soumia El Hani, Larbi Bellarbi, Amal Afyf

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In this paper, a planar monopole antenna for multi band applications is proposed. The antenna structure operates at three operating frequencies at 3.7, 6.2, and 13.5 GHz which cover different communication frequency ranges. The antenna consists of a quasi-modified rectangular radiating patch with a partial ground plane and two parasitic elements (open-loop-ring resonators) to serve as coupling-bridges. A stepped cut at lower corners of the radiating patch and the partial ground plane are used, to achieve the multiband features. The proposed antenna is manufactured on the FR4 substrate and is simulated and optimized using High Frequency Simulation System (HFSS). The antenna topology possesses an area of 30.5 x 30 x 1.6 mm³. The measured results demonstrate that the candidate antenna has impedance bandwidths for 10 dB return loss and operates from 3.80 – 3.90 GHz, 4.10 – 5.20 GHz, 11.2 – 11.5 GHz and from 12.5 – 14.0 GHz, which meet the requirements of the wireless local area network (WLAN), worldwide interoperability for microwave access (WiMAX), C- (Uplink) and Ku- (Uplink) band applications. Acceptable agreement is obtained between measurement and simulation results. Experimental results show that the antenna is successfully simulated and measured, and the tri-band antenna can be achieved by adjusting the lengths of the three elements and it gives good gains across all the operation bands.

Keywords: planar monopole antenna, FR4 substrate, HFSS, WLAN, WiMAX, C and Ku

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Authors: Daria Grechishnikova, Maria Poptsova

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Transposable elements play an important role in the evolution of various species from bacteria to human. Long Interspersed Nuclear Elements (LINEs) and Short Interspersed Nuclear Elements (SINEs) are two major classes of retrotransposons that occupy a considerable part of any genome and their copy numbers can range form several hundreds to a million. Both LINEs and SINEs multiply through a copy-and-paste mechanism. LINEs encode proteins, which make them capable of self-propagation while SINEs are parasitic and require the machinery of LINEs to multiply. The mechanisms how LINE and SINE RNA is recognized by the LINE-encoded reverse transcriptase (RT) remain unclear. For some SINE-LINE pairs, it was shown that they share a common 3’-end with a stem-loop structure. Majority of the SINE-LINE pairs do not have a common 3’-end. Recently we have shown that in the human genome Alu-L1 pairs have structurally similar stem-loop structure at the 3’-end. Here we extended our analysis to a wide range of species and analyzed LINEs from 161 different species from Repbase and 217 SINE sequences from SINEBase. It appeared that all of the analyzed sequences contained stem-loop structures at the 3’-end. Here we conclude that it is very likely that a common evolutionary mechanism of transposon RNA recognition requires the presence of stem-loop structures at their 3’-end.

Keywords: LINE, SINE, mechanisms of retrotransposition, retrotransposons, stem-loop, stem-loop structures, transposons

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Authors: M. Al Huwayz, A. Salhi, S. Alhassan, S. Alotaibi, A. Almalki, M.Almunyif, A. Alhassni, M. Henini

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Recently, there has been much research carried out to investigate quantum dots (QDs) lasers with the aim to increase the gain of quantum well lasers. However, one of the difficulties with these structures is that electrically active defects can lead to serious issues in the performance of these devices. It is therefore essential to fully understand the types of defects introduced during the growth and/or the fabrication process. In this study, the effects of Gamma radiation on the electrically active defects in p-i-n InAs/InGaAsQDs laser structures grown by Molecular Beam Epitaxy (MBE) technique on GaAs substrates were investigated. Deep Level Transient Spectroscopy (DLTS), current-voltage (I-V), and capacitance-voltage (C-V) measurements were performed to explore these effects on the electrical properties of these QDs lasers. I-V measurements showed that as-grown sample had better electrical properties than the irradiated sample. However, DLTS and Laplace DLTS measurements at different reverse biases revealed that the defects in the-region of the p-i-n structures were decreased in the irradiated sample. In both samples, a trap with an activation energy of ~ 0.21 eV was assigned to the well-known defect M1 in GaAs layers

Keywords: quantum dots laser structures, gamma radiation, DLTS, defects, nAs/IngaAs

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Authors: Nermin Isik, Ozlem Derinbay Ekici

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The cat is one of the potential hosts for parasitic zoonoses, such as Toxocara cati, Ancylostoma braziliense, A. tubaeforme, Uncinaria stenocephala, Cryptosporidium sp, Giardia sp. This study was performed to determine the prevalence and intensity of intestinal parasites in household cats in Konya, Turkey. In this study, a total of 100 stool samples with different ages and sex were used as a material. They were examined for infections with endoparasites by the use of native, Fulleborn flotation and Benedek sedimentation methods in University of Selcuk, Faculty of Veterinary Medicine, Department of Parasitology. The overall prevalence of intestinal parasites was 15%. A total of 6 parasite species was recorded: Giardia sp (6%), Toxocara cati (4%), Isospora sp (3%), Joyeuxiella pasqualei, Taenia sp (1%), Trichuris sp (1%). The most common intestinal parasites in cats were Giardia sp (6%) and Toxocara cati (4%). Younger cats up to 1 year of age were more frequently infected with endoparasites than animals over 1 year of age (p < 0.05). Giardia sp and Toxocara cati were detected significantly more often in younger than 1 year of age (p < 0.05). In fecal examination, Toxocara cati, Ancylostoma sp. Joyeuxiella pasqualei, Dipylidium caninum, Trichuris sp were found in cats in Turkey. In this study, based on microscopic and macroscopic fecal examinations, Giardia sp (6%), Toxocara cati (4%), Isospora sp (3%), Joyeuxiella pasqualei (%2), Taenia sp (1%), Trichuris sp (1%) was detected in cats. In conclusion, zoonotic intestinal parasites in household cats such as Giardia sp and Toxocara cati should be considered more seriously and it is necessary to take precautions against these infections. Cats should be routinely checked by faecal examination for endoparasite infections.

Keywords: cat, intestinal parasites, faecal, Turkey

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Authors: Bahattin Abay

Abstract:

Thin film of polycyclic aromatic hydrocarbon rubrene, C₄₂H₂₈ (5,6,11,12-tetraphenyltetracene), has been surfaced on Moderately Doped (MD) n-InP substrate as an interfacial layer by means of spin coating technique for the electronic modification of Au/MD n-InP structure. Ex situ annealing has been carried out at 150 °C for three minutes under a brisk flow of nitrogen for the better adhesion of the deposited film with the substrate surface. Room temperature electrical characterization has been performed on the C₄₂H₂₈/MD n-InP hybrid junctions by current-voltage (I-V) and capacitance-voltage (C-V) measurement in the dark. It has been seen that the C₄₂H₂₈/MD n-InP structure demonstrated extraordinary rectifying behavior. An effective barrier height (BH) as high as 0.743 eV, along with an ideality factor very close to unity (n=1.203), has been achieved for C₄₂H₂₈/n-InP organic/inorganic device. A thin C₄₂H₂₈ interfacial layer between Au and MD n-InP also reduce the reverse leakage current by almost four orders of magnitude and enhance the BH about 0.278 eV. This good performance of the device is ascribed to the passivation effect of organic interfacial layer between Au and n-InP. By using C-V measurement, in addition, the value of BH of the C₄₂H₂₈/n-InP organic/inorganic hybrid junctions have been obtained as 0.796 eV. It has been seen that both of the BH value (0.743 and 0.796 eV) for the organic/inorganic hybrid junction obtained I-V and C-V measurement, respectively are significantly larger than that of the conventional Au/n-InP structure (0.465 and 0.503 eV). It was also seen that the device had good sensitivity to the light under 100 mW/cm² illumination conditions. The obtained results indicated that modification of the interfacial potential barrier for Metal/n-InP junctions might be attained using polycyclic aromatic hydrocarbon thin interlayer C₄₂H₂₈.

Keywords: I-V and C-V measurements, heterojunction, n-InP, rubrene, surface passivation

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Authors: Azzeddine Abdelalim, Fatiha Rogti

Abstract:

The degradation phenomenon in polymer solar cells (PCSs) has not been clearly explained yet. In fact, there are many causes that show up and influence these cells in a variety of ways. Also, there has been a growing concern over this degradation in the photovoltaic community. One of the main variables deciding PSCs photovoltaic output is defect states. In this research, devices modeling is carried out to analyze the multiple effects of degradation by applying high defect states (HDS) on ideal PSCs, mainly poly(3-hexylthiophene) (P3HT) absorber layer. Besides, a comparative study is conducted between P3HT and other PSCs by a simulation program called Solar Cell Capacitance Simulator (SCAPS). The adjustments to the defect parameters in several absorber layers explain the effect of HDS on the total output properties of PSCs. The performance parameters for HDS, quantum efficiency, and energy band were therefore examined. This research attempts to explain the degradation process of PSCs and the causes of their low efficiency. It was found that the defects often affect PSCs performance, but defect states have a little effect on output when the defect level is less than 1014cm-3, which gives similar performance values with P3HT cells when these defects is about 1019cm-3. The high defect states can cause up to 11% relative reduction in conversion efficiency of ideal P3HT. In the center of the band gap, defect states become more noxious. This approach is for one of the degradation processes potential of PSCs especially that use fullerene derivative acceptors.

Keywords: degradation, high defect states, polymer solar cells, SCAPS-1D

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Authors: Abhilasha Dadhich, Manisha Mathur, Sanjay Kumar, Hemant Dadhich

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The camel (Camelus dromedarius) is an important animal component of the fragile desert eco-system of India. Apart from others, impaired milk and meat production decrease in performance and even death are some of the major consequences of parasitic disease like coccidiosis in camel. Coccidiosis which is an acute invasion and destruction of intestinal mucosa by protozoa of the genera Eimeria or isospora spp. Post-Mortem examinations of 5 carcasses of dromedary of different age groups aged from 2 to 5 years were conducted. The history indicated that the camels were suffering from diarrhoea, dysentery, pyrexia, inappetence, weight loss, and emaciation. Post mortem examinations showed macroscopic and microscopic alterations in the small intestine, particularly in jejunum and ileum regions. The mucosae were congested, and haemorrhagic on which there were numerous whitish-grey nodular foci were observed. The affected intestinal tissue specimens were preserved in 10% formal saline and processed mechanically for paraffin embedding by acetone and benzene technique. The sections were stained with haematoxylin and eosin method of staining for histopathological examinations. Histologically, typical lesions such as congestion and haemorrhages were present. The intestinal villi were oedematous; mucosa degenerated and desquamated, along with infiltration of eosinophils and macrophages. Crypts of lieberkuhn were obliterated due to presence of schizonts in lamina propria. Older camels served as the source of spread of coccidial infection and were also predisposed to secondary infections.

Keywords: camel, coccidiosis, Eimeria, histopathology

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Authors: Muhammad SAFDAR, Mehmet Ozaslan, Musarrat Abbas Khan

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Babesiosis is a haemoparasitic disease due to the multiplication of protozoan’s parasite, Babesia ovis in the red blood cells of the host, and contributes numerous economical losses, including sheep and goat ruminants. The early identification and successful treatment of Babesia Ovis spp. belong to the key steps of control and health management of livestock resources. The objective of this study was to construct a polymerase chain reaction (PCR) based method for the detection of Babesia spp. in small ruminants and to determine the risk factors involved in the spreading of babesiosis infections. A total of 100 blood samples were collected from 50 sheep and 50 goats along with different areas of Muzaffargarh, Pakistan, from randomly selected herds. Data on the characteristics of sheep and goats were collected through questionnaires. Of 100 blood samples examined, 18 were positive for Babesia ovis upon microscopic studies, whereas 11 were positive for the presence of Babesia spp. by PCR assay. For the recognition of parasitic DNA, a set of 500bp oligonucleotide was designed by PCR amplification with sequence 18S rRNA gene for B. ovis. The prevalence of babesiosis in small ruminant’s sheep and goat detected by PCR was significantly higher in female animals (28%) than male herds (08%). PCR analysis of the reference samples showed that the detection limit of the PCR assay was 0.01%. Taken together, all data indicated that this PCR assay was a simple, fast, specific detection method for Babesia ovis species in small ruminants compared to other available methods.

Keywords: Babesia ovis, PCR amplification, 18S rRNA, sheep and goat

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Authors: Afy Syahidan Achmad

Abstract:

Tangkuban Perahu is located in West Java, Indonesia. It is active stratovolcano type and still showing hidrothermal activity. The main purpose of this study is to find correlation between subsurface structure and hidrothermal activity on the surface. Using topographic map, SRTM images, and field observation, geological condition and alteration area was mapped. Alteration sample analyzed trough petrographic analysis and X-Ray Diffraction (XRD) analysis. Altered rock in study area showing white-yellowish white colour, and texture changing variation from softening to hardening because of alteration by sillica and sulphur. Alteration mineral which can be observed in petrographic analysis and XRD analysis consist of crystobalite, anatase, alunite, and pyrite. This mineral assemblage showing advanced argillic alteration type with West-East alteration area orientation. Alteration area have correlation with manifestation occurance such as steam vents, solfatara, and warm to hot pools. Most of manifestation occured in main crater like Ratu Crater and Upas crater, and parasitic crater like Domas Crater and Jarian Crater. This manifestation indicates permeability in subsurface which can be created trough structural process with same orientation. For further study geophysics method such as Magneto Telluric (MT) and resistivity can be required to find permeability zone pattern in Tangkuban Perahu subsurface.

Keywords: alteration, advanced argillic, Tangkuban Perahu, XRD, crystobalite, anatase, alunite, pyrite

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Authors: Lu-Yin Lin

Abstract:

The morphology of electroactive material is highly related to energy storage ability. Structure-directing agent (SDA) can design electroactive materials with favorable surface properties. Zeolitic imidazolate framework 67 (ZIF67) is one of the potential electroactive materials for energy storage devices. The SDA concept is less applied to designing ZIF67 derivatives in previous studies. An in-situ technique with ammonium fluoride (NH₄F) as SDA is proposed to produce a ZIF67 derivative with highly improved energy storage ability. Attracted by the effective in-situ technique, the NH₄F, ammonium bifluoride (NH₄HF₂), and ammonium tetrafluoroborate (NH₄BF₄) are first used as SDA to synthesize ZIF67 derivatives in one-step solution process as electroactive material of energy storage devices. The mechanisms of forming ZIF67 derivatives synthesized with different SDAs are discussed to explain the SDA effects on physical and electrochemical properties. The largest specific capacitance (CF) of 1527.0 Fg-¹ and the capacity of 296.9 mAhg-¹ are obtained for the ZIF67 derivative prepared using NH₄BF₄ as SDA. The energy storage device composed of the optimal ZIF67 derivative and carbon electrodes presents a maximum energy density of 15.1 Whkg-¹ at the power density of 857 Wkg-¹. The CF retention of 90% and Coulombic efficiency larger than 98% are also obtained after 5000 cycles.

Keywords: ammonium bifluoride, ammonium tetrafluoroborate, energy storage device, one-step solution process, structure-directing agent, zeolitic imidazolate framework 67

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