Search results for: ion sensitive field effect transistor (ISFET)

Authors: Alibi Kilybay, Emad Alhseinat, Ibrahim Mustafa, Abdulfahim Arangadi, Pei Shui, Faisal Almarzooqi

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In this work, the electromagnetic field has been used for improving the performance of the capacitive deionization process. The effect of electromagnetic fields on the efficiency of the capacitive deionization (CDI) process was investigated experimentally. The results showed that treating the feed stream of the CDI process using an electromagnetic field can enhance the electrosorption capacity from 20% up to 70%. The effect of the degree of time of exposure, concentration, and type of ions have been examined. The electromagnetic field enhanced the salt adsorption capacity (SAC) of the Ca²⁺ ions by 70%, while the SAC enhanced 20% to the Na⁺ ions. It is hypnotized that the electrometric field affects the hydration shell around the ions and thus reduces their effective size and enhances the mass transfer. This reduction in ion effective size and increase in mass transfer enhanced the electrosorption capacity and kinetics of the CDI process.

Keywords: capacitive deionization, desalination, electromagnetic treatment, water treatment

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Authors: S. Suman, G. N. Singh

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The present manuscript addresses the estimation procedure of population parameter using Poisson probability distribution when characteristic under study possesses a rare sensitive attribute. The generalized form of unrelated randomized response model is suggested in order to acquire the truthful responses from respondents. The resultant estimators have been proposed for two situations when the information on an unrelated rare non-sensitive characteristic is known as well as unknown. The properties of the proposed estimators are derived, and the measure of confidentiality of respondent is also suggested for respondents. Empirical studies are carried out in the support of discussed theory.

Keywords: Poisson distribution, randomized response model, rare sensitive attribute, non-sensitive attribute

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Authors: Meng-Jie Hsiao, Cam Nguyen

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Wide-band devices in Ku band (12-18 GHz) and K band (18-27 GHz) have received significant attention for high-data-rate communications and high-resolution sensing. Especially, devices operating around 24 GHz is attractive due to the 24-GHz unlicensed applications. One of the most important components in RF systems is power amplifier (PA). Various PAs have been developed in the Ku and K bands on GaAs, InP, and silicon (Si) processes. Although the PAs using GaAs or InP process could have better power handling and efficiency than those realized on Si, it is very hard to integrate the entire system on the same substrate for GaAs or InP. Si, on the other hand, facilitates single-chip systems. Hence, good PAs on Si substrate are desirable. Especially, Si-based PA having good linearity is necessary for next generation communication protocols implemented on Si. We report a 16.5 to 25.5 GHz Si-based PA having flat saturated power of 19.5 ± 1.5 dBm, output 1-dB power compression (OP1dB) of 16.5 ± 1.5 dBm, and 15-23 % power added efficiency (PAE). The PA consists of a drive amplifier, two main amplifiers, and lump-element Wilkinson power divider and combiner designed and fabricated in TowerJazz 0.18µm SiGe BiCMOS process having unity power gain frequency (fMAX) of more than 250 GHz. The PA is realized as a cascode amplifier implementing both heterojunction bipolar transistor (HBT) and n-channel metal–oxide–semiconductor field-effect transistor (NMOS) devices for gain, frequency response, and linearity consideration. Particularly, a body-floating technique is utilized for the NMOS devices to improve the voltage swing and eliminate parasitic capacitances. The developed PA has measured flat gain of 20 ± 1.5 dB across 16.5-25.5 GHz. At 24 GHz, the saturated power, OP1dB, and maximum PAE are 20.8 dBm, 18.1 dBm, and 23%, respectively. Its high performance makes it attractive for use in Ku/K-band, especially 24 GHz, communication and radar systems. This paper was made possible by NPRP grant # 6-241-2-102 from the Qatar National Research Fund (a member of Qatar Foundation). The statements made herein are solely the responsibility of the authors.

Keywords: power amplifiers, amplifiers, communication systems, radar systems

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Authors: Pejman Hosseinioun, Abolghasem Ghasempour, Elham Gholami, Hamed Sarbazi

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Considering the development in global semiconductor technology, it is anticipated that gadgets such as diodes and resonant transistor tunnels (RTD/RTT), Single electron transistors (SET) and quantum cellular automata (QCA) will substitute CMOS (Complementary Metallic Oxide Semiconductor) gadgets in many applications. Unfortunately, these new technologies cannot disembark the common Boolean logic efficiently and are only appropriate for liminal logic. Therefor there is no doubt that with the development of these new gadgets it is necessary to find new MacDraw technologies which are compatible with them. Resonant transistor tunnels (RTD/RTT) and circuit MacDraw with enhanced computing abilities are candida for accumulating Nano criterion in the future. Quantum cellular automata (QCA) are also advent Nano technological gadgets for electrical circuits. Advantages of these gadgets such as higher speed, smaller dimensions, and lower consumption loss are of great consideration. QCA are basic gadgets in manufacturing gates, fuses and memories. Regarding the complex Nano criterion physical entity, circuit designers can focus on logical and constructional design to decrease complication in MacDraw. Moreover Single electron technology (SET) is another noteworthy gadget considered in Nano technology. This article is a survey in future of Nano technology in digital MacDraw.

Keywords: nano technology, resonant transistor tunnels, quantum cellular automata, semiconductor

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Authors: Alka Jakhar, Harmanpreet Kaur Sandhu, Samaresh Das

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The Terahertz (THz) technology-based devices are heightening at an alarming rate on account of the wide range of applications in imaging, security, communication, and spectroscopic field. The various available room operational THz detectors, including Golay cell, pyroelectric detector, field-effect transistors, and photoconductive antennas, have some limitations such as narrow-band response, slow response speed, transit time limits, and complex fabrication process. There is an urgent demand to explore new materials and device structures to accomplish efficient THz detection systems. Recently, TMDs including topological semimetals and topological insulators such as PtSe₂, MoTe₂, WSe₂, and PtTe₂ provide novel feasibility for photonic and optical devices. The peculiar properties of these materials, such as Dirac cone, fermions presence, nonlinear optical response, high conductivity, and ambient stability, make them worthy for the development of the THz devices. Here, the platinum telluride (PtTe₂) based devices have been demonstrated for THz detection in the frequency range of 0.1-1 THz. The PtTe₂ is synthesized by direct selenization of the sputtered platinum film on the high-resistivity silicon substrate by using the chemical vapor deposition (CVD) method. The Raman spectra, XRD, and XPS spectra confirm the formation of the thin PtTe₂ film. The PtTe₂ channel length is 5µm and it is connected with a bow-tie antenna for strong THz electric field confinement in the channel. The characterization of the devices has been carried out in a wide frequency range from 0.1-1 THz. The induced THz photocurrent is measured by using lock-in-amplifier after preamplifier. The maximum responsivity is achieved up to 1 A/W under self-biased mode. Further, this responsivity has been increased by applying biasing voltage. This photo response corresponds to low energy THz photons is mainly due to the photo galvanic effect in PtTe₂. The DC current is induced along the PtTe₂ channel, which is directly proportional to the amplitude of the incident THz electric field. Thus, these new topological semimetal materials provide new pathways for sensitive detection and sensing applications in the THz domain.

Keywords: terahertz, detector, responsivity, topological-semimetals

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Authors: Azizi Cherifa, O. Benzaoui

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The thermal aspects in the design of power circuits often deserve as much attention as pure electric components aspects as the operating temperature has a direct influence on their static and dynamic characteristics. MOSFET is fundamental in the circuits, it is the most widely used device in the current production of semiconductor components using their honorable performance. The aim of this contribution is devoted to the effect of the temperature on the properties of MOSFETs. The study enables us to calculate the drain current as function of bias in both linear and saturated modes. The effect of temperature is evaluated using a numerical simulation, using the laws of mobility and saturation velocity of carriers as a function of temperature.

Keywords: temperature, MOSFET, mobility, transistor

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Authors: Carmen M. Gonzalez-Henriquez, Mauricio A. Sarabia-Vallejos, Juan Rodriguez-Hernandez

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DMAEMA, as a monomer, has been widely studied and used in several application fields due to their pH-sensitive capacity (tertiary amine protonation), being relevant in the biomedical area as a potential carrier for drugs focused on the treatment of genetic or acquired diseases (efficient gene transfection), among others. Additionally, the inhibition of bacterial growth and, therefore, their antimicrobial activity, can be used as dual-functional antifogging/antimicrobial polymer coatings. According to their interesting physicochemical characteristics and biocompatible properties, DMAEMA was used as a monomer to synthesize a smart pH-sensitive hydrogel, namely poly(HEMA-co-PEGDA575-co-DMAEMA). Thus, different mole ratios (ranging from 5:1:0 to 0:1:5, according to the mole ratio between HEMA, PEGDA, and DEAEMA, respectively) were used in this research. The surface patterns formed via a two-step polymerization (redox- and photo-polymerization) were first chemically studied via 1H-NMR and elemental analysis. Secondly, the samples were morphologically analyzed by using Field-Emission Scanning Electron Microscopy (FE-SEM) and Atomic Force Microscopy (AFM) techniques. Then, a particular relation between HEMA, PEGDA, and DEAEMA (0:1:5) was also characterized at three different pH (5.4, 7.4 and 8.3). The hydrodynamic radius and zeta potential of the micro-hydrogel particles (emulsion) were carried out as a possible control for morphology, exploring the effect that produces hydrogel micelle dimensions in the wavelength, height, and roughness of the wrinkled patterns. Finally, contact angle and cross-hatch adhesion test was carried out for the hydrogels supported on glass using TSM-silanized surfaces in order to measure their mechanical properties.

Keywords: wrinkled patterns, smart pH-sensitive hydrogels, hydrogel micelle diameter, adhesion tests

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Authors: Dawit Burusie Abdi, Mamidala Jagadesh Kumar

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In this paper, using 2D TCAD simulations, the application of a dual material gate (DMG) for suppressing ambipolar conduction in a tunnel field effect transistor (TFET) is demonstrated. Using the proposed DMG concept, the ambipolar conduction can be effectively suppressed even if the drain doping is as high as that of the source doping. Achieving this symmetrical doping, without the ambipolar conduction in TFETs, gives the advantage of realizing both n-type and p-type devices with the same doping sequences. Furthermore, the output characteristics of the DMG TFET exhibit a good saturation when compared to that of the gate-drain underlap approach. This improved behavior of the DMG TFET makes it a good candidate for inverter based logic circuits.

Keywords: dual material gate, suppressing ambipolar current, symmetrically doped TFET, tunnel FETs, PNPN TFET

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Authors: Yi-Xuan Huang, Kung-Ming Chung, Ping-Han Chung

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Pressure sensitive paint (PSP), which relies on the oxygen quenching of a luminescent molecule, is an optical technique used in wind-tunnel models. A full-field pressure pattern with low aerodynamic interference can be obtained, and it is becoming an alternative to pressure measurements using pressure taps. In this study, a polymer-ceramic PSP was used, using toluene as a solvent. The porous particle and polymer were silica gel (SiO₂) and RTV-118 (3g:7g), respectively. The compound was sprayed onto the model surface using a spray gun. The absorption and emission spectra for Ru(dpp) as a luminophore were respectively 441-467 nm and 597 nm. A Revox SLG-55 light source with a short-pass filter (550 nm) and a 14-bit CCD camera with a long-pass (600 nm) filter were used to illuminate PSP and to capture images. This study determines surface pressure patterns for a forebody of an AGARD B model in a compressible flow. Since there is no experimental data for surface pressure distributions available, numerical simulation is conducted using ANSYS Fluent. The lift and drag coefficients are calculated and in comparison with the data in the open literature. The experiments were conducted using a transonic wind tunnel at the Aerospace Science and Research Center, National Cheng Kung University. The freestream Mach numbers were 0.83, and the angle of attack ranged from -4 to 8 degree. Deviation between PSP and numerical simulation is within 5%. However, the effect of the setup of the light source should be taken into account to address the relative error.

Keywords: pressure sensitive paint, forebody, surface pressure, compressible flow

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Authors: Samson Mil'shtein, Dhawal N. Asthana

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The presented heterostructure n-p-n bipolar transistor is comprised of Ge/GaAs heterojunctions consisting of 0.15µm thick emitter and 0.65µm collector junctions. High diffusivity of carriers in GaAs base was major motivation of current design. We avoided grading of the base which is common in heterojunction bipolar transistors, in order to keep the electron diffusivity as high as possible. The electrons injected into the 0.25µm thick p-type GaAs base with not very high doping (1017cm-3). The designed HBT enables cut off frequency on the order of 150GHz. The Ge/GaAs heterojunctions presented in our paper have proved to work better than comparable HBTs having GaAs bases and emitter/collector junctions made, for example, of AlGaAs/GaAs or other III-V compound semiconductors. The difference in lattice constants between Ge and GaAs is less than 2%. Therefore, there is no need of transition layers between Ge emitter and GaAs base. Significant difference in energy gap of these two materials presents new scope for improving performance of the emitter. With the complete structure being modelled and simulated using TCAD SILVACO, the collector/ emitter offset voltage of the device has been limited to a reasonable value of 63 millivolts by the dint of low energy band gap value associated with Ge emitter. The efficiency of the emitter in our HBT is 86%. Use of Germanium in the emitter and collector regions presents new opportunities for integration of this vertical device structure into silicon substrate.

Keywords: Germanium, Gallium Arsenide, heterojunction bipolar transistor, high cut-off frequency

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Authors: Sergei Voychuk

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Introduction: Adaptive response (AR) is a manifestation of radiation hormesis, which deal with the radiation resistance that may be increased with the pretreatment with small doses of radiation. In the current study, we evaluated the potency of radiofrequency EMF to induce the AR mechanisms and to increase a resistance to UV light. Methods: Saccharomyces cerevisiae yeast strains, which were created to study induction of mutagenesis and recombination, were used in the study. The strains have mutations in rad2 and rad54 genes, responsible for DNA repair: nucleotide excision repair (PG-61), postreplication repair (PG-80) and mitotic (crossover) recombination (T2). An induction of mutation and recombination are revealed due to the formation of red colonies on agar plates. The PG-61 and T2 are UV sensitive strains, while PG-80 is sensitive to ionizing radiation. Extremely high frequency electromagnetic field (EHF-EMF) was used. The irradiation was performed in floating mode and frequency changed during exposure from 57 GHz to 62 GHz. The power of irradiation was 100 mkW, and duration of exposure was 10 and 30 min. Treatment was performed at RT and then cells were stored at 28° C during 1 h without any exposure but after that they were treated with UV light (254nm) for 20 sec (strain T2) and 120 sec (strain PG-61 and PG-80). Cell viability and quantity of red colonies were determined after 5 days of cultivation on agar plates. Results: It was determined that EHF-EMF caused 10-20% decrease of viability of T2 and PG-61 strains, while UV showed twice stronger effect (30-70%). EHF-EMF pretreatment increased T2 resistance to UV, and decreased it in PG-61. The PG-80 strain was insensitive to EHF-EMF and no AR effect was determined for this strain. It was not marked any induction of red colonies formation in T2 and PG-80 strain after EHF or UV exposure. The quantity of red colonies was 2 times more in PG-61 strain after EHF-EMF treatment and at least 300 times more after UV exposure. The pretreatment of PG-61 with EHF-EMF caused at least twice increase of viability and consequent decrease of amount of red colonies. Conclusion: EHF-EMF may induce AR in yeast cells and increase their viability under UV treatment.

Keywords: Saccharomyces cerevisiae, EHF-EMF, UV light, adaptive response

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Authors: Nassima Behidj-Benyounes, Thoraya Dahmene, Nadjiba Chebout

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This work examines the study of the antimicrobrial effect of alkaloids extracted from the seeds of Peganum harmala L (Zygophyllaceae). This natural substance is extracted by using different solvents (aqueous, ethanolic, and hexane). The evaluation of the antimicrobial activity has only dealt with alkaloids. The antimicrobial effect of alkaloids is evaluated on several microorganisms. It has been tested on eight bacterial strains. The extract has been studied by using two yeasts. Finally, three molds have been studied. It should be noted that these agents are characterized by a high frequency of contamination and pathogenicity. Through this study, we note that Staphylococcus aureus, Saccharomyces cerievisae and E. coli are very sensitive in respect of the ethanol extract. Pseudomonas aerogenosa and Penicillium sp. are resistant to this extract. The other microorganisms are moderately sensitive. The study of the antimicrobial activity of different extracts of the Harmel has shown an optimal activity with the ethanol extract.

Keywords: Peganum harmala L., seeds, alkaloids, bacteria, fungi, yeast, antimicrobial activity

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Authors: Partha P. Gopmandal, S. Bhattacharyya

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We investigate the thermal end effect on the pseudo-steady state behavior of the isotachophoretic transport of ionic species in a 2-D microchannel. Both ends of the channel are kept at a constant temperature which may lead to significant changes in electrophoretic migration speed. A mathematical model based on Nernst-Planck equations for transport of ions coupled with the equation for temperature field is considered. In addition, the charge conservation equations govern the potential field due to the external electric field. We have computed the equations for ion transport, potential and temperature in a coupled manner through the finite volume method. The diffusive terms are discretized via central difference scheme, while QUICK (Quadratic Upwind Interpolation Convection Kinematics) scheme is used to discretize the convective terms. We find that the thermal end effect has significant effect on the isotachophoretic (ITP) migration speed of the analyte. Our result shows that the ITP velocity for temperature dependent case no longer varies linearly with the applied electric field. A detailed analysis has been made to provide a range of the key parameters to minimize the Joule heating effect on ITP transport of analytes.

Keywords: finite volume method, isotachophoresis, QUICK scheme, thermal effect

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Authors: Ameni Mahmoudi, Manel Troudi, Paolo Bondavalli, Nabil Sghaier

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In this study, the charge storage on thin-film SWCNT transistors was investigated, and C-V hysteresis tests showed that interface charge trapping effects predominate the memory window. Two electrode materials were utilized to demonstrate that selecting the appropriate metal electrode clearly improves the conductivity and, consequently, the SWCNT thin-film’s memory effect. Because their work function is similar to that of thin-film carbon nanotubes, Ti contacts produce higher charge confinement and show greater charge storage than Pd contacts. For Pd-contact CNTFETs and CNTFETs with Ti electrodes, a sizable clockwise hysteresis window was seen in the dual sweep circle with a threshold voltage shift of V11.52V and V9.7V, respectively. The SWCNT thin-film based transistor is expected to have significant trapping and detrapping charges because of the large C-V hysteresis. We have found that the predicted stored charge density for CNTFETs with Ti contacts is approximately 4.01×10-2C.m-2, which is nearly twice as high as the charge density of the device with Pd contacts. We have shown that the amount of trapped charges can be changed by sweeping the range or Vgs rate. We also looked into the variation in the flat band voltage (V FB) vs. time in order to determine the carrier retention period in CNTFETs with Ti and Pd electrodes. The outcome shows that memorizing trapped charges is about 300 seconds, which is a crucial finding for memory function mimicking.

Keywords: charge storage, thin-film SWCNT based transistors, C-V hysteresis, memory effect, trapping and detrapping charges, stored charge density, the carrier retention time

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Authors: Sree Bash Chandra Debnath, Didier Tonneau, Carole Fauquet, Agnes Tallet, Julien Darreon

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Purpose: Inorganic scintillating dosimetry is the most recent promising technique to solve several dosimetric issues and provide quality assurance in radiation therapy. Despite several advantages, the major issue of using scintillating detectors is the Cerenkov effect, typically induced in the visible emission range. In this context, the purpose of this research work is to evaluate the performance of a novel infrared inorganic scintillator detector (IR-ISD) in the radiation therapy treatment to ensure Cerenkov free signal and the best matches between the delivered and prescribed doses during treatment. Methods: A simple and small-scale infrared inorganic scintillating detector of 100 µm diameter with a sensitive scintillating volume of 2x10-6 mm3 was developed. A prototype of the dose verification system has been introduced based on PTIR1470/F (provided by Phosphor Technology®) material used in the proposed novel IR-ISD. The detector was tested on an Elekta LINAC system tuned at 6 MV/15MV and a brachytherapy source (Ir-192) used in the patient treatment protocol. The associated dose rate was measured in count rate (photons/s) using a highly sensitive photon counter (sensitivity ~20ph/s). Overall measurements were performed in IBATM water tank phantoms by following international Technical Reports series recommendations (TRS 381) for radiotherapy and TG43U1 recommendations for brachytherapy. The performance of the detector was tested through several dosimetric parameters such as PDD, beam profiling, Cerenkov measurement, dose linearity, dose rate linearity repeatability, and scintillator stability. Finally, a comparative study is also shown using a reference microdiamond dosimeter, Monte-Carlo (MC) simulation, and data from recent literature. Results: This study is highlighting the complete removal of the Cerenkov effect especially for small field radiation beam characterization. The detector provides an entire linear response with the dose in the 4cGy to 800 cGy range, independently of the field size selected from 5 x 5 cm² down to 0.5 x 0.5 cm². A perfect repeatability (0.2 % variation from average) with day-to-day reproducibility (0.3% variation) was observed. Measurements demonstrated that ISD has superlinear behavior with dose rate (R2=1) varying from 50 cGy/s to 1000 cGy/s. PDD profiles obtained in water present identical behavior with a build-up maximum depth dose at 15 mm for different small fields irradiation. A low dimension of 0.5 x 0.5 cm² field profiles have been characterized, and the field cross profile presents a Gaussian-like shape. The standard deviation (1σ) of the scintillating signal remains within 0.02% while having a very low convolution effect, thanks to lower sensitive volume. Finally, during brachytherapy, a comparison with MC simulations shows that considering energy dependency, measurement agrees within 0.8% till 0.2 cm source to detector distance. Conclusion: The proposed scintillating detector in this study shows no- Cerenkov radiation and efficient performance for several radiation therapy measurement parameters. Therefore, it is anticipated that the IR-ISD system can be promoted to validate with direct clinical investigations, such as appropriate dose verification and quality control in the Treatment Planning System (TPS).

Keywords: IR-Scintillating detector, dose measurement, micro-scintillators, Cerenkov effect

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Authors: N. Massoum, A. Guen. Bouazza, B. Bouazza, A. El Ouchdi

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The progress of industry integrated circuits in recent years has been pushed by continuous miniaturization of transistors. With the reduction of dimensions of components at 0.1 micron and below, new physical effects come into play as the standard simulators of two dimensions (2D) do not consider. In fact the third dimension comes into play because the transverse and longitudinal dimensions of the components are of the same order of magnitude. To describe the operation of such components with greater fidelity, we must refine simulation tools and adapted to take into account these phenomena. After an analytical study of the static characteristics of the component, according to the different operating modes, a numerical simulation is performed of field-effect transistor with submicron gate MESFET GaInP. The influence of the dimensions of the gate length is studied. The results are used to determine the optimal geometric and physical parameters of the component for their specific applications and uses.

Keywords: Monte Carlo simulation, transient electron transport, MESFET device, GaInP

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Authors: Omar Abdalla, Abdelfatah Ahmed, Ahmed Mustafa, Abdelazem Eldouma

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The purpose of this study is evaluating the effect of extremely low frequency magnetic field on Waster rats brain. The number of rats used in this study were 25, which were divided into five groups, each group containing five rats as follows: Group 1: The control group which was not exposed to energized field; Group 2: Rats were exposed to a magnetic field with an intensity of 0.6 mT (2 hours/day); Group 3: Rats were exposed to a magnetic field of 1.2 mT (2 hours/day); Group4: Rats were exposed to a magnetic field of 1.8 mT (2 hours/day); Group 5: Rats were exposed to a magnetic field of 2.4 mT (2 hours/day) and all groups were exposed for seven days, by designing a maze and calculating the time average for arriving to the decoy at special conditions. We found the time average before exposure for the all groups was G2=330 s, G3=172 s, G4=500 s and G5=174 s, respectively. We exposed all groups to ELF-MF and measured the time and we found: G2=465 s, G3=388 s, G4=501 s, and G5=442 s. It was observed that the time average increased directly with field strength. Histological samples of frontal lop of brain for all groups were taken and we found lesion, atrophy, empty vacuoles and disorder choroid plexus at frontal lope of brain. And finally we observed the disorder of choroid plexus in histological results and Alzheimer's symptoms increase when the magnetic field increases.

Keywords: nonionizing radiation, biophysics, magnetic field, shrinkage

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Authors: Qihang Zeng, Wei Xu, Ying Shen, Changyuan Yu

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In this paper, a highly sensitive fiber-optic curvature sensor based on four mode fiber (FMF) is presented and investigated. The proposed sensing structure is constructed by fusing a section of FMF into two standard single mode fibers (SMFs) concatenated with two no core fiber (NCF), i.e., SMF-NCF-FMF-NCF-SMF structure is fabricated. The length of the NCF is very short about 1 millimeter acting as exciting/recoupling the light from/into the core of the SMF, while the FMF is with 3 centimeters long supporting four eigenmodes including LP₀₁, LP₁₁, LP₂₁ and LP₀₂. High core modes in FMF can be effectively stimulated owing to mismatched mode field distribution and the mainly sensing principle is based on modal interferometer spectrum analysis. Different curvatures induce different strains on the FMF such that affecting the modal excitation, resulting spectrum shifts. One can get the curvature value by tracking the wavelength shifting. Experiments have been done to address the sensing performance, which is about 7.8 nm/m⁻¹ within a range of 1.90 m⁻¹~3.18 m⁻¹.

Keywords: curvature, four mode fiber, highly sensitive, modal interferometer

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Authors: Feiyu Fang, Han Wang, Xin Chen, Jun Zeng, Feng Liang, Peixuan Wu

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The 'rope coiling' effect is a normal instability phenomenon widespread exists in viscous fluid, elastic rods and polymeric fibers owing to compressive stress when they fall into a moving belt. Near-field electro-spinning is the modified electro-spinning technique has the ability to direct write micro fibers. In this research, we study the “rope coiling” effect in near-field electro-spinning. By changing the distance between nozzle and collector or the speed ratio between the charge jet speed and the platform moving speed, we obtain a pile of different models coils including the meandering, alternating and coiling patterns. Therefore, this instability can be used to direct write micro structured fibers with a one-step process.

Keywords: rope coiling effects, near-field electrospinning, direct write, micro structure

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Authors: Yousef S. Kh. S. Hashem

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Accurate estimation of initial gas in place (IGIP) plays an important factor in the decision to develop a gas field. One of the methods that are available in the industry to estimate the IGIP is material balance. This method required that the well has to be shut-in while pressure is measured as it builds to average reservoir pressure. Since gas demand is high and shut-in well surveys are very expensive, flowing gas material balance (FGMB) is sometimes used instead of material balance. This work investigated the effect of reservoir properties (pressure, permeability, and reservoir size) on the estimation of IGIP when using FGMB. A gas reservoir simulator that accounts for friction loss, wellbore storage, and the non-Darcy effect was used to simulate 165 different possible causes (3 pressures, 5 reservoir sizes, and 11 permeabilities). Both tubing pressure and bottom-hole pressure were analyzed using FGMB. The results showed that the FGMB method is very sensitive for tied reservoirs (k < 10). Also, it showed which method is best to be used for different reservoir properties. This study can be used as a guideline for the application of the FGMB method.

Keywords: flowing material balance, gas reservoir, reserves, gas simulator

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Authors: Phanumas Khumsat, Chalermchai Janmane

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Low-voltage instrumentation amplifier has been proposed for 3-lead electrocardiogram measurement system. The circuit’s interference rejection technique is based upon common-mode feed-forwarding where common-mode currents have cancelled each other at the output nodes. The common-mode current for cancellation is generated by means of common-mode sensing and emitter or source followers with resistors employing only one transistor. Simultaneously this particular transistor also provides common-mode feedback to the patient’s right/left leg to further reduce interference entering the amplifier. The proposed designs have been verified with simulations in 0.18-µm CMOS process operating under 1.0-V supply with CMRR greater than 80dB. Moreover ECG signals have experimentally recorded with the proposed instrumentation amplifiers implemented from discrete BJT (BC547, BC558) and MOSFET (ALD1106, ALD1107) transistors working with 1.5-V supply.

Keywords: electrocardiogram, common-mode feedback, common-mode feedforward, communication engineering

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Authors: S. Santalunai, T. Thosdeekoraphat, C. Thongsopa

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This paper presents the effect of electric field distribution which is an electric field intensity analysis. Consideration of the dielectric heating of grains and insects, the rice and rice weevils are utilized for dielectric heating analysis. Furthermore, this analysis compares the effect of electric field distribution in rice and rice weevil. In this simulation, two copper plates are used to generate the electric field for dielectric heating system and put the rice materials between the copper plates. The simulation is classified in two cases, which are case I one rice weevil is placed in the rice and case II two rice weevils are placed at different position in the rice. Moreover, the probes are located in various different positions on plate. The power feeding on this plate is optimized by using CST EM studio program of 1000 watt electrical power at 39 MHz resonance frequency. The results of two cases are indicated that the most electric field distribution and intensity are occurred on the rice and rice weevils at the near point of the probes. Moreover, the heat is directed to the rice weevils more than the rice. When the temperature of rice and rice weevils are calculated and compared, the rice weevils has the temperature more than rice is about 41.62 Celsius degrees. These results can be applied for the dielectric heating applications to eliminate insect.

Keywords: capacitor copper plates, electric field distribution, dielectric heating, grains

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Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

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Multi-gate SOI MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with a scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high -k dielectric materials as oxide layer at different places in MOSFET structures. One of the most important multi-gate structures is square GAA SOI MOSFET that is a strong candidate for the next generation nanoscale devices; show an even stronger control of short channel effects. In this paper, GAA SOI MOSFET structure with using high -k dielectrics materials Al2O3 (k~9), HfO2 (k~20), La2O3 (k~30) and metal gate TiN are simulated by using 3-D device simulator DevEdit and Atlas of SILVACO TCAD tools. Square GAA SOI MOSFET transistor with High-k HfO2 gate dielectrics and TiN metal gate exhibits significant improvements performances compared to Al2O3 and La2O3 dielectrics for the same structure. Simulation results of GAA SOI MOSFET transistor with HfO2 dielectric show the increase in saturation current and Ion/Ioff ratio while leakage current, subthreshold slope and DIBL effect are decreased.

Keywords: technology SOI, short-channel effects (SCEs), multi-gate SOI MOSFET, square GAA SOI MOSFET, high-k dielectric, Silvaco software

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Authors: K. Godazandeh, K. Sadeghy

Abstract:

In the present study, the effect of magnetic field on the hydrodynamic instability of Taylor-Couette flow between two concentric rotating cylinders has been numerically investigated. At the beginning the basic flow has been solved using continuity, Cauchy equations (with regards to Lorentz force) and the constitutive equations of a viscoelastic model called "Giesekus" model. Small perturbations, considered to be normal mode, have been superimposed to the basic flow and the unsteady perturbation equations have been derived consequently. Neglecting non-linear terms, the general eigenvalue problem obtained has been solved using pseudo spectral method (combination of Chebyshev polynomials). The objective of the calculations is to study the effect of magnetic fields on the onset of first mode of instability (axisymmetric mode) for different dimensionless parameters of the flow. The results show that the stability picture is highly influenced by the magnetic field. When magnetic field increases, it first has a destabilization effect which changes to stabilization effect due to more increase of magnetic fields. Therefor there is a critical magnetic number (Hartmann number) for instability of Taylor-Couette flow. Also, the effect of magnetic field is more dominant in large gaps. Also based on the results obtained, magnetic field shows a more considerable effect on the stability at higher Weissenberg numbers (at higher elasticity), while the "mobility factor" changes show no dominant role on the intense of suction and injection effect on the flow's instability.

Keywords: magnetic field, Taylor-Couette flow, Giesekus model, pseudo spectral method, Chebyshev polynomials, Hartmann number, Weissenberg number, mobility factor

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Authors: Khalida Boutemak, Nasssima Benali, Nadji Moulai-Mostefa

Abstract:

Effect of enzyme on the yield and chemical composition of Artemisia campestris essential oil is reported in the present study. It was demonstrated that enzyme facilitated the extraction of essential oil with increase in oil yield and did not affect any noticeable change in flavour profile of the volatile oil. Essential oil was tested for antibacterial activity using Escherichia coli; which was extremely sensitive against control with the largest inhibition (29mm), whereas Staphylococcus aureus was the most sensitive against essential oil obtained from enzymatic pre-treatment with the largest inhibition zone (25mm). The antioxidant activity of the essential oil with hemicellulase pre-treatment (EO2) and control sample (EO1) was determined through reducing power. It was significantly lower than the standard drug (vitamin C) in this order: vitamin C˃EO2˃EO1.

Keywords: Artemisia campestris, enzyme pre-treatment, hemicellulase, antibacterial activity, antioxidant activity

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Authors: Noha Al Majid, Said Mazer, Moulhime El Bekkali, Catherine Algani, Mahmoud Mehdi

Abstract:

A low noise figure (NF) and high linearity V-band Low Noise Amplifier (LNA) is reported in this article. The LNA compromises a three-stage cascode configuration. This LNA will be used as a part of a WPAN (Wireless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. It is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH 15 process from UMS foundry and uses a 0.15 μm GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor). The particularity of this LNA compared to other LNAs in literature is its very low noise figure which is equal to 1 dB and its high linearity (IIP3 is about 22 dB). The LNA consumes 0.24 Watts, achieving a high gain which is about 23 dB, an input return loss better than -10 dB and an output return loss better than -8 dB.

Keywords: low noise amplifier, V-band, MMIC technology, LNA, amplifier, cascode, pseudomorphic high electron mobility transistor (PHEMT), high linearity

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Authors: Naima Benachour, Sabiha Chouchane, J. Paul Chopart

Abstract:

The objective of this work is to determine the appropriate conditions for a Ni-Zn deposit with good nickel content. The electrodeposition of zinc-nickel on a stainless steel is carried out in a chlorinated bath NiCl2.6H2O, ZnCl2, and H3BO3), whose composition is 1.1 M; 1.8 M; 0.1 M respectively. Studies show the effect of the concentration of NH4Cl, which reveals a significant effect on the reduction and ion transport in the electrolyte. In order to highlight the influence of magnetic field on the chemical composition and morphology of the deposit, chronopotentiometry tests were conducted, the curves obtained inform us that the application of a magnetic field promotes stability of the deposit. Characterization developed deposits was performed by scanning electron microscopy coupled with EDX and specified by the X-ray diffraction.

Keywords: Zn-Ni alloys, electroplating, magnetic field, chronopotentiometry

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Authors: Li Yongyi

Abstract:

In order to explore the distribution of geological disasters within the expressway area of Shaanxi Province, the Analytic Hierarchy Process theory is applied based on the geographic information system technology platform, and the ground elevation, rainfall, vegetation coverage and other indicators are selected for analysis, and the expressway area is sensitive Sexual evaluation. The results show that the highway area disasters in Shaanxi Province are mainly distributed in the southern mountainous areas and are dominated by landslides; the disaster area ratio basically increases with the increase in ground elevation, surface slope, surface undulation, rainfall, and vegetation coverage. The increase in the distance from the river shows a decreasing trend; after grading the disaster sensitivity within 5km of the expressway, the extremely sensitive area, the highly sensitive area, the medium sensitive area, the low sensitive area, and the extremely low sensitive area respectively account for 8.17%、15.80%、22.99%、26.22%、26.82%. Highly sensitive road areas are mainly distributed in southern Shaanxi.

Keywords: highway engineering, sensitivity, analytic hierarchy process, geological hazard, road area

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Authors: Bezuglov Eduard, Achkasov Evgeniy, Emanov Anton, Shagiakhmetova Larisa, Pirmakhanov Bekzhan, Morgans Ryland

Abstract:

Background: Previous studies have found that there is a wide range of the relative age effect (RAE) in young athletes, which is dependent on age and gender. However, there is currently scant data comparing the prevalence of the RAE in successful athletes across different age groups from the same sport during the same time period. We aimed to compare the prevalence of the RAE in different age groups of successful athletes. Materials and methods: The date of birth of all youth (under 18 years old) and senior (20 years and above) male and female track and field athletes were analyzed. All athletes had entered the World Top 20 rankings in disciplines where performance rules were the same at youth and adult levels. Data were collected from the website www. tilostopaja.eu between 1999 and 2006. Results: A significant prevalence of RAE in successful youth track and field athletes were reported. Early-born (61,1%) and late-born (38,9%) athletes were represented respectively (χ2 = 131,1, p < 0,001, ϖ = 0,24). The RAE is not significant in successful senior track and field athletes. Athletes born in the first half of the year are only 0.4% more prevalent than athletes born in the second half of the year (50,2% and 49,8%, respectively). Olympic Games and World Championship medalists are more often late-born athletes (44,1% and 55,9%, respectively) (p = 0,014, χ2 = 6,1, ϖ = 0,20). Conclusion: The RAE is only prevalent in successful young track and field athletes. The RAE was not observed in successful senior track and field athletes, regardless of gender, in any of the analyzed discipline groups. The RAE reverse was observed in successful senior track and field athletes.

Keywords: relative age effect, track, and field, talent identification, underdog effect

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Authors: Hamouda M. Mousa, M. Obaid, Chan Hee Park, Cheol Sang Kim

Abstract:

The rate of copper cementation on iron rod was investigated. The study was mainly dedicated to illustrate the effect of application of electromagnetic field (EMF) on the rate of cementation. The magnetic flux was placed parallel to the iron rod and different magnetic field strength was studied. The results showed that without EMF, the rate of mass transfer was correlated by the equation: Sh= 1.36 Re0. 098 Sc0.33. The application of EMF enhanced the time required to reach high percentage copper cementation by 50%. The rate of mass transfer was correlated by the equation: Sh= 2.29 Re0. 95 Sc0.33, with applying EMF. This work illustrates that the enhancement of copper recovery in presence of EMF is due to the induced motion of Fe+n in the solution which is limited in the range of rod rotation speed of 300~900 rpm. The calculation of power consumption of EMF showed that although the application of EMF partially reduced the cementation time, the reduction of power consumption due to utilization of magnetic field is comparable to the increase in power consumed by introducing magnetic field of 2462 A T/m.

Keywords: copper cementation, electromagnetic field, copper ions, iron cylinder

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