Search results for: square GAA SOI MOSFET

Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

Abstract:

Multi-gate SOI MOSFETs has shown better results in subthreshold performances. The replacement of SiO2 by high-k dielectric can fulfill the requirements of Multi-gate MOSFETS with a scaling trend in device dimensions. The advancement in fabrication technology has also boosted the use of different high -k dielectric materials as oxide layer at different places in MOSFET structures. One of the most important multi-gate structures is square GAA SOI MOSFET that is a strong candidate for the next generation nanoscale devices; show an even stronger control of short channel effects. In this paper, GAA SOI MOSFET structure with using high -k dielectrics materials Al2O3 (k~9), HfO2 (k~20), La2O3 (k~30) and metal gate TiN are simulated by using 3-D device simulator DevEdit and Atlas of SILVACO TCAD tools. Square GAA SOI MOSFET transistor with High-k HfO2 gate dielectrics and TiN metal gate exhibits significant improvements performances compared to Al2O3 and La2O3 dielectrics for the same structure. Simulation results of GAA SOI MOSFET transistor with HfO2 dielectric show the increase in saturation current and Ion/Ioff ratio while leakage current, subthreshold slope and DIBL effect are decreased.

Keywords: technology SOI, short-channel effects (SCEs), multi-gate SOI MOSFET, square GAA SOI MOSFET, high-k dielectric, Silvaco software

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Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

Abstract:

Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, kink effect

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Authors: Petr Vaculik

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The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber.

Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber

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Authors: Abdelghafour Galadi

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In this paper, accurate power MOSFET models including quasi-saturation effect are presented. These models have no internal node voltages determined by the circuit simulator and use one JFET or one depletion mode MOSFET transistors controlled by an “effective” gate voltage taking into account the quasi-saturation effect. The proposed models achieve accurate simulation results with an average error percentage less than 9%, which is an improvement of 21 percentage points compared to the commonly used standard power MOSFET model. In addition, the models can be integrated in any available commercial circuit simulators by using their analytical equations. A description of the models will be provided along with the parameter extraction procedure.

Keywords: power MOSFET, drift layer, quasi-saturation effect, SPICE model

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Authors: Dheeraj Sharma, Santosh Kumar Vishvakarma

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We present a detailed analysis of analog and radiofrequency (RF) performance with different gate lengths for nanowire cylindrical gate (CylG) gate-all-around (GAA) MOSFET. CylG GAA MOSFET not only suppresses the short channel effects (SCEs), it is also a good candidate for analog/RF device due to its high transconductance (gm) and high cutoff frequency (fT ). The presented work would be beneficial for a new generation of RF circuits and systems in a broad range of applications and operating frequency covering the RF spectrum. For this purpose, the analog/RF figures of merit for CylG GAA MOSFET is analyzed in terms of gate to source capacitance (Cgs), gate to drain capacitance (Cgd), transconductance generation factor gm = Id (where Id represents drain current), intrinsic gain, output resistance, fT, maximum frequency of oscillation (fmax) and gain bandwidth (GBW) product.

Keywords: Gate-All-Around MOSFET, GAA, output resistance, transconductance generation factor, intrinsic gain, cutoff frequency, fT

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Authors: Syakirin O. Yong, Nasrudin A. Rahim, Bilal M. Eid, Buray Tankut

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The aim of this paper is to develop an ultra-fast gate driver for Silicon Carbide (SiC) based switching device applications such as AC/DC DC/AC converters. Wide bandgap semiconductors such as SiC switches are growing rapidly nowadays due to their numerous capabilities such as faster switching, higher power density and higher voltage level. Wide band-gap switches can work properly on high frequencies such 50-250 kHz which is very useful for many power electronic applications such as solar inverters. Increasing the frequency minimizes the output filter size and system complexity however, this causes huge spike between MOSFET’s drain and source leg which leads to the failure of MOSFET if the voltage rating is exceeded. This paper investigates and concludes the optimum design for a gate drive board for SiC MOSFET switches without causing spikes and noises.

Keywords: PV system, lithium-ion, charger, constant current, constant voltage, renewable energy

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Authors: A. A. Akande, B. P. Dhonge, B. W. Mwakikunga, A. G. J. Machatine

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This article presents gate-voltage controlled humidity sensing performance of vanadium dioxide nanoparticles prepared from NH₄VO₃ precursor using microwave irradiation technique. The X-ray diffraction, transmission electron diffraction, and Raman analyses reveal the formation of VO₂ (B) with V₂O₅ and an amorphous phase. The BET surface area is found to be 67.67 m²/g. The humidity sensing measurements using the patented lateral-gate MOSFET configuration was carried out. The results show the optimum response at 5 V up to 8 V of gate voltages for 10 to 80% of relative humidity. The dose-response equation reveals the enhanced resilience of the gated VO₂ sensor which may saturate above 272% humidity. The response and recovery times are remarkably much faster (about 60 s) than in non-gated VO₂ sensors which normally show response and recovery times of the order of 5 minutes (300 s).

Keywords: VO2, VO2(B), MOSFET, gate voltage, humidity sensor

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Authors: Kittipong Tripetch, Nobuhiko Nakano

Abstract:

This paper proposes one stage and two stage CMOS Complementary Regulated Cascode Distributed Amplifier (CRCDA) design based on Inductive and Transformer coupling techniques. Usually, Distributed amplifier is based on inductor coupling between gate and gate of MOSFET and between drain and drain of MOSFET. But this paper propose some new idea, by coupling with differential primary windings of transformer between gate and gate of MOSFET first stage and second stage of regulated cascade amplifier and by coupling with differential secondary windings transformer of MOSFET between drain and drain of MOSFET first stage and second stage of regulated cascade amplifier. This paper also proposes polynomial modeling of Silicon Transformer passive equivalent circuit from Nanyang Technological University which is used to extract frequency response of transformer. Cadence simulation results are used to verify validity of transformer polynomial modeling which can be used to design distributed amplifier without Cadence. 4 parameters of scattering matrix of 2 port of the propose circuit is derived as a function of 4 parameters of impedance matrix.

Keywords: CMOS regulated cascode distributed amplifier, silicon transformer modeling with polynomial, low power consumption, distribute amplification technique

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Authors: Alok Kumar Kamal, Vinod Kumar

Abstract:

The trench gate MOSFET has shown itself as the most appropriate power device for low to medium voltage power applications due to its lowest possible ON resistance among all power semiconductor devices. In this research work a double-epilayer PSGT structure using a thin layer of N+ polysilicon as gate material. The total ON-state resistance (RON) of UMOSFET can be reduced by optimizing the epilayer thickness. The optimized structure of Double-Epilayer exhibits a 25.8% reduction in the ON-state resistance at Vgs=5V and improving the switching characteristics by reducing the Reverse transfer capacitance (Cgd) by 7.4%.

Keywords: Miller-capacitance, double-Epilayer;switching characteristics, power trench MOSFET (U-MOSFET), on-state resistance, blocking voltage

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Authors: Azizi Cherifa, O. Benzaoui

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The thermal aspects in the design of power circuits often deserve as much attention as pure electric components aspects as the operating temperature has a direct influence on their static and dynamic characteristics. MOSFET is fundamental in the circuits, it is the most widely used device in the current production of semiconductor components using their honorable performance. The aim of this contribution is devoted to the effect of the temperature on the properties of MOSFETs. The study enables us to calculate the drain current as function of bias in both linear and saturated modes. The effect of temperature is evaluated using a numerical simulation, using the laws of mobility and saturation velocity of carriers as a function of temperature.

Keywords: temperature, MOSFET, mobility, transistor

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Authors: Shigeyuki Haruyama, Zefry Darmawan, Ken Kaminishi

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In the square tube subjected to the bending load, the rigidity of the entire square tube is reduced when a collapse occurs due to local stress concentration. Therefore, in this research, the influence of bending load on the square tube with attached energy absorbing part was examined and reported. The analysis was conducted by using Finite Element Method (FEM) to produced bending deflection and buckling points. Energy absorption was compared from rigidity of attached part and square tube body. Buckling point was influenced by the rigidity of attached part and the thickness rate of square tube.

Keywords: energy absorber, square tube, bending, rigidity

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Authors: Fatma Soltani

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In power electronics the DC-DC converters or choppers are now employed in large areas, particularly in the field of electricity generation by wind and solar energy conversion. Photovoltaic generators (GPV) can deliver maximum power for a point on the characteristic P = f (Vpv), called maximum power point (MPP), or climatic variations, entraiment fluctuation PPM. To remedy this problem is interposed between the generator and receiver a DC-DC converter. The converter is usually used a simple MOSFET chopper. However, the MOSFET can be applied in the field of low power when you need a high switching frequency but becomes highly dissipative when should block large voltages For PV generators medium and high power, the use of IGBT chopper is by far the most recommended. To reduce stress on semiconductor components using several choppers series connected in parallel is known as interleaved chopper. These choppers lead to rotas.

Keywords: converter DC-DC entrelaced

, photovoltaic generators, IGBT, optimisation

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Authors: S.Pandeeswari, Raju Padma

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In this paper a new solution to implement and control single-stage electronic ballast based on the integration of a buck-boost power factor correction stage and a half bridge resonant inverter is presented. The control signals are obtained using the inverter resonant current by means of a saturable transformer. Core saturation is used to control the required dead time between the control pulses on both switches. The turn-on time of one of the inverter switches is controlled to provide proper cathode preheating during the lamp ignition process. No special integrated circuits are required to control the ballast and the total number of components is minimized. Analysis and basic design of phase cut dimmer.

Keywords: MOSFET dimmer, PIC 16F877A, voltage regulator, bridge rectifier

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Authors: S. Shahzadi, J. Rizk

Abstract:

This paper describes the pulse width modulated control of a three phase, 4 polar DC brushless motor. To implement this practically the Atmel’s AVR ATmega 328 microcontroller embedded on an Arduino Eleven board is utilized. The microcontroller programming is done in an open source Arduino IDE development environment. The programming logic effectively manipulated a six MOSFET bridge which was used to energize the stator windings as per control requirements. The results obtained showed accurate, precise and efficient pulse width modulated operation. Another advantage offered by this pulse width modulated control was the efficient speed control of the motor. By varying the time intervals between successive commutations, faster energizing of the stator windings was possible thereby leading to quicker rotor alignment with these energized phases and faster revolutions.

Keywords: brushless DC motors, commutation, MOSFET, PWM

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Authors: Neslinur Hizli, Berrak Kirbaş Akyürek

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Beşiktaş, one of the historical coastal district of İstanbul, is on the very edge of the radical transformation because of an approaching ‘Beşiktaş Public Square Project’. At this juncture, due its location, presence on the coast, population density and distance to the other centers of the city, the decisions to be taken are critical to whole Istanbul that will be majorly affected from this transformation. As the new project aims to pedestrianize the area by placing the vehicular traffic under the ground, Beşiktaş and its square will change from top to bottom. Among those considerations, through the advantages and disadvantages the perception of the existing conditions of the Beşiktaş play significant role. The motive of this paper is the lack of determination and clarity on the cognition of the Square. After brief analysis on the historical transformation of the area, prominent studies on the criteria of public square are revised. Through cognitive mapping methodology, characteristics of the Square and the public space in general find a place to discuss from individual views. This study aims to discuss and review Beşiktaş Public Square from perspective, mind and behavior of the users. Cognitive map study with thirty subjects (30) is evaluated and categorized upon the five elements that Kevin Lynch defined as the images of the city. The results obtained digitized and represented with tables and graphs. Findings of the research underline the crucial issues on the approaching change in Beşiktaş. Thus, this study may help to develop comprehensive ideas and new suggestions on the Square.

Keywords: Beşiktaş public square, cognitive map, perception, public space

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Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

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According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling

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Authors: Yunxiang Fang

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With the aging trend continuing to accelerate, open space is important for the daily life of the elderly, and its old-age friendliness is worthy of attention. Based on behavioral observation and literature research, this paper studies the behavior of the elderly in urban open space. Through the investigation, classification and quantitative analysis of the activity types, time characteristics and spatial behavior order of the elderly in Xicheng Square in Hangzhou, it summarizes the square space suitable for the psychological needs, physiology and activity needs of the elderly, combined with the basis of literature research. Finally, the suggestions for the improvement of the old-age friendship of Xicheng Square are put forward, from the aspects of microclimate, safety and accessibility, space richness and service facility quality.

Keywords: behavior characteristics, old-age friendliness, open space, square

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Authors: Sardar Ameer Akram Khan, Shahzad Amin Sheikh

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Blind equalization is an important technique amongst equalization family. Multimodulus algorithms based on blind equalization removes the undesirable effects of ISI and cater ups the phase issues, saving the cost of rotator at the receiver end. In this paper a new algorithm combination of recursive least square and Multimodulus algorithm named as RLSMMA is proposed by providing few assumption, fast convergence and minimum Mean Square Error (MSE) is achieved. The excellence of this technique is shown in the simulations presenting MSE plots and the resulting filter results.

Keywords: blind equalizations, constant modulus algorithm, multi-modulus algorithm, recursive least square algorithm, quadrature amplitude modulation (QAM)

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Authors: Bentoutou Houari, Boutte Aissa, Belaidi El Yazid, Limam Lakhdar

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The integration of a load switch with a DC/DC buck converter using LM2596 for power distribution in low-cost educational nanosatellites is a technique that aims to efficiently manage the power distribution system in these small spacecraft. The converter is based on the LM2596 regulator and designed to step down the input voltage of +16.8V to +12V, +5V, and +3.3V output, which are suitable for the nanosatellite's various subsystems. The load switch is based on MOSFET and is used to turn on or off the power supply to a particular load and protect the nanosatellite from power surges. A prototype of a +12V DC/DC buck converter with a high side load switch has been realized and tested, which meets our requirements and shows a good efficiency of 89%. In addition, the prototype features a capacitor between the source and gate of the MOSFET, which has effectively reduced the inrush current, demonstrating the effectiveness of this approach in reducing surges of current when the load is connected. The output current and voltage were measured at 0.7A and 11.89V, respectively, making this design suitable for use in low-cost educational nanosatellites.

Keywords: DC/DC buck converter, load switch, LM2596, electrical power subsystems, nanosatellite, inrush current

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Authors: Ting-Ting Wen, Jung-Ruey Tsai

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This paper reports a method for the replication of micro-scale structures. By using electromagnetic force-assisted imprinting system with magnetic soft stamp written square-microlens cavity, a photopolymer square-microlens structures can be rapidly fabricated. Under the proper processing conditions, the polymeric square-microlens structures with feature size of width 100.3um and height 15.2um across a large area can be successfully fabricated. Scanning electron microscopy (SEM) and surface profiler observations confirm that the micro-scale polymer structures are produced without defects or distortion and with good pattern fidelity over a 60x60mm2 area. This technique shows great potential for the efficient replication of the micro-scale structure array at room temperature and with high productivity and low cost.

Keywords: square-microlens structures, electromagnetic force-assisted imprinting, magnetic soft stamp

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Authors: Lakrim Abderrazak, Tahri Driss

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This paper presents a new behavioural electrothermal model of power Silicon Carbide (SiC) MOSFET under SPICE. This model is based on the MOS model level 1 of SPICE, in which phenomena such as Drain Leakage Current IDSS, On-State Resistance RDSon, gate Threshold voltage VGSth, the transconductance (gfs), I-V Characteristics Body diode, temperature-dependent and self-heating are included and represented using behavioural blocks ABM (Analog Behavioural Models) of Spice library. This ultimately makes this model flexible and easily can be integrated into the various Spice -based simulation softwares. The internal junction temperature of the component is calculated on the basis of the thermal model through the electric power dissipated inside and its thermal impedance in the form of the localized Foster canonical network. The model parameters are extracted from manufacturers' data (curves data sheets) using polynomial interpolation with the method of simulated annealing (S A) and weighted least squares (WLS). This model takes into account the various important phenomena within transistor. The effectiveness of the presented model has been verified by Spice simulation results and as well as by data measurement for SiC MOS transistor C2M0025120D CREE (1200V, 90A).

Keywords: SiC power MOSFET, DC electro-thermal model, ABM Spice library, SPICE modelling, behavioural model, C2M0025120D CREE.

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Authors: Sahar Mobeen, Anam Rafique, Irum Baig

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Acoustic echo cancellation in multichannel is a system identification application. In real time environment, signal changes very rapidly which required adaptive algorithms such as Least Mean Square (LMS), Leaky Least Mean Square (LLMS), Normalized Least Mean square (NLMS) and average (AFA) having high convergence rate and stable. LMS and NLMS are widely used adaptive algorithm due to less computational complexity and AFA used of its high convergence rate. This research is based on comparison of acoustic echo (generated in a room) cancellation thorough LMS, LLMS, NLMS, AFA and newly proposed average normalized leaky least mean square (ANLLMS) adaptive filters.

Keywords: LMS, LLMS, NLMS, AFA, ANLLMS

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Authors: Flavio O. Torres, Maria J. Castilla, Rodrigo A. Augsburger, Pedro I. Cachana, Katherine S. Reyes

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In this paper, we present a scene-based nonuniformity correction method using a modified recursive least square algorithm with a feedback system on the updates. The feedback is designed to remove impulsive noise contamination images produced by a recursive least square algorithm by measuring the output of the proposed algorithm. The key advantage of the method is based on its capacity to estimate detectors parameters and then compensate for impulsive noise contamination image in a frame by frame basics. We define the algorithm and present several experimental results to demonstrate the efficacy of the proposed method in comparison to several previously published recursive least square-based methods. We show that the proposed method removes impulsive noise contamination image.

Keywords: infrared focal plane arrays, infrared imaging, least mean square, nonuniformity correction

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Authors: Jade Martínez-Llinàs, Pere Colet

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By exploring the possible dynamical regimes in a prototypical model for mutually delay-coupled OEOs, here it is shown that two mutually coupled non-identical OEOs, besides in- and out-of-phase square-waves, can generate stable square-wave pulses synchronized at a quarter of the period (T/4) in a broad parameter region. The key point to obtain T/4 solutions is that the two OEO operate with mixed feedback, namely with negative feedback in one and positive in the other. Furthermore, the coexistence of multiple solutions provides a large degree of flexibility for tuning the frequency in the GHz range without changing any parameter. As a result the two coupled OEOs system is good candidate to be implemented for information encoding as a high-capacity memory device.

Keywords: nonlinear optics, optoelectronic oscillators, square waves, synchronization

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Authors: M. Kessi

Abstract:

We investigated the effect of the magnetic field on carrier transport phenomena in the transistor channel region of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This explores the Lorentz force and basic physical properties of solids exposed to a constant external magnetic field. The magnetic field modulates the electrons and potential distribution in the case of silicon Tunnel FETs. This modulation shows up in the device's external electrical characteristics such as ON current (ION), subthreshold leakage current (IOF), the threshold voltage (VTH), the magneto-transconductance (gm) and the output magneto-conductance (gDS) of Tunnel FET. Moreover, the channel doping concentration and potential distribution are obtained using the numerical method by solving Poisson’s transport equation in 3D modules semiconductor magnetic sensors available in Silvaco TCAD tools. The numerical simulations of the magnetic nano-sensors are relatively new. In this work, we present the results of numerical simulations based on 3D magnetic sensors. The results show excellent accuracy comportment and good agreement compared with that obtained in the experimental study of MOSFETs technology.

Keywords: single-gate MOSFET, magnetic field, hall field, Lorentz force

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Authors: Hamid Sharif, Nazish Saleem Abbas, Muhammad Haris Jamil

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An adaptive filter is a filter that self-adjusts its transfer function according to an optimization algorithm driven by an error signal. Because of the complexity of the optimization algorithms, most adaptive filters are digital filters. Adaptive filtering constitutes one of the core technologies in digital signal processing and finds numerous application areas in science as well as in industry. Adaptive filtering techniques are used in a wide range of applications, including adaptive noise cancellation and echo cancellation. Acoustic echo cancellation is a common occurrence in today’s telecommunication systems. The signal interference caused by acoustic echo is distracting to both users and causes a reduction in the quality of the communication. In this paper, we review different techniques of adaptive filtering to reduce this unwanted echo. In this paper, we see the behavior of techniques and algorithms of adaptive filtering like Least Mean Square (LMS), Normalized Least Mean Square (NLMS), Variable Step-Size Least Mean Square (VSLMS), Variable Step-Size Normalized Least Mean Square (VSNLMS), New Varying Step Size LMS Algorithm (NVSSLMS) and Recursive Least Square (RLS) algorithms to reduce this unwanted echo, to increase communication quality.

Keywords: adaptive acoustic, echo cancellation, LMS algorithm, adaptive filter, normalized least mean square (NLMS), variable step-size least mean square (VSLMS)

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Authors: Xiaobing Liu, Bo Zhang, Xiaolong Zhao

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The square-dancing is one of the most popular new physical activities in China in recent years, which has become a hotspot of Chinese landscape research. This paper collects 749 news reports from four authoritative newspapers in Harbin for 3 years, and probes into the space use needs of participants and non-participants of square-dancing. In this paper, the research results are compared with the contents of three related planning and design codes in China, and some modification or supplementary suggestions are proposed from three aspects, such as decision-making process, total-quantity control, and site design. Different from the traditional research, this research does not use the data from interviews and the questionnaires, but uses the traditional media report content for analyzing. To some extent, it avoids the research result being excessively subjective, enhances objectivity and the authority.

Keywords: China, landscape, space design, square-dancing

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Authors: Niaz Gharavi, Hexin Zhang

Abstract:

The shear modulus of a timber beam can be determined using torsion test or shear field test method. The shear field test method is based on shear distortion measurement of the beam at the zone with the constant transverse load in the standardized four-point bending test. The current code of practice advises using two metallic arms act as an instrument to measure the diagonal displacement of the constructing square. The size and the position of the constructing square might influence the shear modulus determination. This study aimed to investigate the size and the position effect of the square in the shear field test method. A binocular stereo vision system has been employed to determine the 3D displacement of a grid of target points. Six glue laminated beams were produced and tested. Analysis of Variance (ANOVA) was performed on the acquired data to evaluate the significance of the size effect and the position effect of the square. The results have shown that the size of the square has a noticeable influence on the value of shear modulus, while, the position of the square within the area with the constant shear force does not affect the measured mean shear modulus.

Keywords: shear field test method, structural-sized test, shear modulus of Glulam beam, photogrammetry approach

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Authors: Saurabh Chaudhury, Sanjeet Kumar Sinha

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The MOSFET has been the main building block in high performance and low power VLSI chips for the last several decades. Device scaling is fundamental to technological advancements, which allows more devices to be integrated on a single die providing greater functionality per chip. Ultimately, the goal of scaling is to build an individual transistor that is smaller, faster, cheaper, and consumes less power. Scaling continued following Moore's law initially and now we see an exponential growth in today's nano scaled chip. However, device scaling to deep nano meter regime leads to exponential increase in leakage currents and excessive heat generation. Moreover, fabrication process variability causing a limitation to further scaling. Researchers believe that with a mix of chemistry, physics, and engineering, nano electronics may provide a solution to increasing fabrication costs and may allow integrated circuits to be scaled beyond the limits of the modern transistor. Carbon nano tube (CNT) and nano wires (NW) based FETs have been analyzed and characterized in laboratory and also been demonstrated as prototypes. This work presents an extensive simulation based study and analysis of CNTFET and NW-FET devices and comparison of the results with conventional MOSFET. From this study, we can conclude that these devices have got some excellent properties and favorable characteristics which will definitely lead the future semiconductor devices in post silicon era.

Keywords: carbon nanotube, nanowire FET, low power, nanoscaled devices, VLSI

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Authors: Yaping Zhao, Yimin Zhang

Abstract:

In the present paper, the stationary random vibration of a uniform cantilever beam is investigated. Two types of damping mechanism, i.e. the external and internal viscous dampings, are taken into account simultaneously. The excitation form is the support motion, and it is ideal white. Because two type of damping mechanism are considered concurrently, the product of the modal damping ratio and the natural frequency is not a constant anymore. As a result, the infinite definite integral encountered in the process of computing the mean square response is more complex than that in the existing literature. One signal progress of this work is to have calculated these definite integrals accurately. The precise solution of the mean square response is thus obtained in the infinite series form finally. Numerical examples are supplied and the numerical outcomes acquired confirm the validity of the theoretical analyses.

Keywords: random vibration, cantilever beam, mean square response, white noise

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