Search results for: heterojunction diodes

Authors: T. A. Shahul Hameed, P. Predeep, Anju Iqbal, M. R. Baiju

Abstract:

Research and development in organic photovoltaic cells and Organic Light Emitting Diodes have gained wider acceptance due to the advent of many advanced techniques to enhance the efficiency and operational hours. Here we report our work on design, simulation and characterizationracterize the bulk heterojunction organic photo cell and polymer light emitting diodes in different layer configurations using ATLAS, a licensed device simulation tool. Bulk heterojuction and multilayer devices were simulated for comparing their performance parameters.

Keywords: HOMO, LUMO, PLED, OPV

Procedia PDF Downloads 553

Authors: Abdelrahman Zkria, Tsuyoshi Yoshitake

Abstract:

Diamond is one of the most interesting semiconducting carbon materials owing to its unique physical and chemical properties, yet its application in electronic devices is limited due to the difficulty of realizing n-type conduction by nitrogen doping. In contrast Ultrananocrystalline diamond with diamond grains of about 3–5 nm in diameter have attracted much attention for device-oriented applications because they may enable the realization of n-type doping with nitrogen. In this study, nitrogen-doped Ultra-Nanocrystalline diamond films were prepared by coaxial arc plasma deposition (CAPD) method, the nitrogen content was estimated by X-ray photoemission spectroscopy (XPS). The electrical conductivity increased with increasing nitrogen contents. Heterojunction diodes with p-type Si were fabricated and evaluated based on current–voltage (I–V) and capacitance–voltage (C–V) characteristics measured in dark at room temperature.

Keywords: heterojunction diodes, hopping conduction mechanism, nitrogen-doping, ultra-nanocrystalline diamond

Procedia PDF Downloads 273

Authors: Venkatesan Annadurai, Kannan Ethirajalu, Anu Roshini Ramakrishnan

Abstract:

Copper oxide (CuO) and zinc oxide (ZnO) based coaxial (CuO-ZnO nanorods) heterojunction has been the interest of various research communities for solar cells, light emitting diodes (LEDs) and photodetectors applications. Copper oxide (CuO) is a p-type material with the band gap of 1.5 eV and it is considered to be an attractive absorber material in solar cells applications due to its high absorption coefficient and long minority carrier diffusion length. Similarly, n-type ZnO nanorods possess many attractive advantages over thin films such as, the light trapping ability and photosensitivity owing to the presence of oxygen related hole-traps at the surface. Moreover, the abundant availability, non-toxicity, and inexpensiveness of these materials make them suitable for potentially cheap, large area, and stable photovoltaic applications. However, the efficiency of the CuO-ZnO nanorods heterojunction based devices is greatly affected by interface defects which generally lead to the poor performance. In spite of having much potential, not much work has been carried out to understand the interface quality and transport mechanism involved across the CuO-ZnO nanorods heterojunction. Therefore, a detailed investigation of CuO-ZnO heterojunction is needed to understand the interface which affects its photovoltaic performance. Herein, we have fabricated the CuO-ZnO nanorods based heterojunction by simple hydrothermal and electrodeposition technique and investigated its interface quality by carrying out temperature (300 –10 K) dependent current-voltage (I-V) measurements under dark and illumination of visible light. Activation energies extracted from the temperature dependent I-V characteristics reveals that recombination and tunneling mechanism across the interfacial barrier plays a significant role in the current flow.

Keywords: heterojunction, electrical transport, nanorods, solar cells

Procedia PDF Downloads 198

Authors: M. Chavez, H. Juarez, M. Pacio, O. Portillo

Abstract:

PbS chemical bath heterojunction sollar cells have shown significant improvements in performance. Here we demonstrate a solar cell based on the heterojunction formed between PbS layer and PbS:Bi3+ thin films that are deposited via solution process at 40°C. The device achieve an current density of 4 mA/cm2. The simple and low-cost deposition method of PbS:Bi3+ films is promising for the fabrication.

Keywords: PbS doped, Bismuth, solar cell, thin films

Procedia PDF Downloads 522

Authors: Gaurav Upadhyay, Nand Kishore, Prashant Ranjan, Shivesh Tripathi, V. S. Tripathi

Abstract:

In this paper, a patch antenna array design is proposed for vehicular communication. The antenna consists of 2-element patch array. The antenna array is operating at multiple frequency bands. The multiband operation is achieved by use of slots at proper locations at the patch. The array is made reconfigurable by use of two PIN-diodes. The antenna is simulated and measured in four states of diodes i.e. ON-ON, ON-OFF, OFF-ON, and OFF-OFF. In ON-ON state of diodes, the resonant frequencies are 4.62-4.96, 6.50-6.75, 6.90-7.01, 7.34-8.22, 8.89-9.09 GHz. In ON-OFF state of diodes, the measured resonant frequencies are 4.63-4.93, 6.50-6.70 and 7.81-7.91 GHz. In OFF-ON states of diodes the resonant frequencies are 1.24-1.46, 3.40-3.75, 5.07-5.25 and 6.90-7.20 GHz and in the OFF-OFF state of diodes 4.49-4.75 and 5.61-5.98 GHz. The maximum bandwidth of the proposed antenna is 16.29%. The peak gain of the antenna is 3.4 dB at 5.9 GHz, which makes it suitable for vehicular communication.

Keywords: antenna, array, reconfigurable, vehicular

Procedia PDF Downloads 223

Authors: Sandeep Kaushal

Abstract:

Tetracycline (TC) is a widespread antibiotic that is utilised in a multitude of countries, particularly China, India, and the United States of America, due to its low cost and potency in boosting livestock production. Unfortunately, certain antibiotics can be hazardous to living beings due to metal complexation and aggregation, which can lead to teratogenicity and carcinogenicity. Heterojunction photocatalysts are promising for the effective removal of pollutants like antibiotics. Herein, a simple, economical, and pollution-less hydrothermal technique was used to construct SnO₂/MnV₂O₆heterojunction with varying amounts of tin dioxide (SO₂). Various sophisticated techniques like XRD, FTIR, XPS, FESEM, HRTEM, and PLand Raman spectroscopy demonstrated the successful synthesis of SnO₂/MnV₂O₆ heterojunction photocatalysts.BET surface area analysis revealed that the as-synthesized heterojunction has a favorable surface area and surface properties for efficacious degradation of tetracycline. Under the direct sunlight exposure, the SnO₂/MnV₂O₆ heterojunction possessed superior photodegradation activity toward TC than the pristine SnO₂ and MnV2O6owing to their excellent adsorption abilities suitable band positions, large surface areas along with the effective charge-transfer ability of the heterojunction. The SnO₂/MnV₂O₆ heterojunction possessed extraordinary efficiency for the photocatalytic degradation of TC antibiotic (98% in 60 min) with an apparent rate constant of 0.092 min–1. In the degradation experiments, photocatalytic activities of as-synthesized heterojunction were studied by varying different factors such as time contact, catalyst dose, and solution pH. The role of reactive species in antibiotics was validated by radical scavenging studies, which indicated that.OH, radical has a critical role in photocatalytic degradation. Moreover, liquid chromatography-mass spectrometry (LC-MS) investigations were employed to anticipate a plausible mechanism for TC degradation.

Keywords: photocatalytic degradation, tetracycline, heterojunction, LC-MS

Procedia PDF Downloads 82

Authors: Temesgen Geremew

Abstract:

ZnS/glass and CdS/glass single layers and ZnS/CdS and CdS/ZnS heterojunction thin films were deposited by the chemical bath deposition method using zinc acetate and cadmium acetate as the metal ion sources and thioacetamide as a nonmetallic ion source in acidic medium. Na2EDTA was used as a complexing agent to control the free cation concentration. +e single layer and heterojunction thin films were characterized with X-ray diffraction (XRD), a scanning electron microscope (SEM), energy dispersive X-ray (EDX), and a UV-VIS spectrometer. +e XRD patterns of the CdS/glass thin film deposited on the soda lime glass substrate crystalized in the cubic structure with a single peak along the (111) plane. +e ZnS/CdS heterojunction and ZnS/glass single layer thin films were crystalized in the hexagonal ZnS structure. +e CdS/ZnS heterojunction thin film is nearly amorphous.The optical analysis results confirmed single band gap values of 2.75 eV and 2.5 eV for ZnS/CdS and CdS/ZnS heterojunction thin films, respectively. +e CdS/glass and CdS/ZnS thin films have more imaginary dielectric components than the real part. The optical conductivity of the single layer and heterojunction films is in the order of 1015 1/s. +e optical study also confirmed refractive index values between 2 and 2.7 for ZnS/glass, ZnS/CdS, and CdS/ZnS thin films for incident photon energies between 1.2 eV and 3.8 eV. +e surface morphology studies revealed compacted spherical grains covering the substrate surfaces with few cracks on ZnS/glass, ZnS/CdS, and CdS/glass and voids on CdS/ZnS thin films. +e EDX result confirmed nearly 1 :1 metallic to nonmetallic ion ratio in the single-layered thin films and the dominance of Zn ion over Cd ion in both ZnS/CdS and CdS/ZnS heterojunction thin films.

Keywords: SERS, sensor, Hg2+, water detection, polythiophene

Procedia PDF Downloads 33

Authors: Hassane Ben Slimane, Dennai Benmoussa, Abderrachid Helmaoui

Abstract:

We have theoretically calculated the photovoltaic conversion efficiency of a graded interface CdS/CIGS solar cell, which can be experimentally fabricated. Because the conduction band discontinuity or spike in an abrupt heterojunction CdS/CIGS solar cell can hinder the separation of hole-electron by electric field, a graded interface layer is uses to eliminate the spike and reduces recombination in space charge region. This paper describes the role of the graded band gap interface layer in decreasing the performance of the heterojunction cell. By optimizing the thickness of the graded region, an improvement of conversion efficiency has been observed in comparison to the conventional CIGS system.

Keywords: heterojunction, solar cell, graded interface, CIGS

Procedia PDF Downloads 373

Authors: J. O. Bodunrin, S. J. Moloi

Abstract:

This study reports on the x-ray crystallography (XRD) structure of cadmium-implanted p-type silicon, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of unimplanted and cadmium-implanted silicon-based diodes. Cadmium was implanted at the energy of 160 KeV to the fluence of 10¹⁵ ion/cm². The results obtained indicate that the diodes were well fabricated, and the introduction of cadmium results in a change in behavior of the diodes from normal exponential to ohmic I-V behavior. The C-V measurements, on the other hand, show that the measured capacitance increased after cadmium doping due to the injected charge carriers. The doping density of the p-Si material and the device's Schottky barrier height was extracted, and the doping density of the undoped p-Si material increased after cadmium doping while the Schottky barrier height reduced. In general, the results obtained here are similar to those obtained on the diodes fabricated on radiation-hard material, indicating that cadmium is a promising metal dopant to improve the radiation hardness of silicon. Thus, this study would assist in adding possible options to improve the radiation hardness of silicon to be used in high energy physics experiments.

Keywords: cadmium, capacitance-voltage, current-voltage, high energy physics experiment, x-ray crystallography, XRD

Procedia PDF Downloads 111

Authors: Yi Hu, Chun-Chi Lin, Shau-En Yeh, Shin Lee

Abstract:

In this study, p–n heterojunctions with La0.5Sr0.5CoO3 (LSCO) and W-doped VO2 thin films were fabricated by the radio frequency (r.f.) magnetron sputtering technique and sol-gel process, respectively. The thickness of VO2 and LSCO thin films are about 40 nm and 400 nm, respectively. Good crystalline match between LSCO and VO2 films was observed from the SEM. The built-in voltages for the junction are about 1.1 V and 2.3 V for the sample in the metallic and insulating state, respectively. The sample can undergo the current induced MIT during applying field when the sample was heated at 40 and 50ºC. This is in agreement with the value obtained from the difference in the work functions of LSCO and VO2. The band structure of the heterojunction was proposed based on the results of analysis.

Keywords: hetrojection, Mott transition, switching , VO2

Procedia PDF Downloads 553

Authors: Ksenija Milošević, Davor Lončarević, Tihana Mudrinić, Jasmina Dostanić

Abstract:

Heterogeneous photocatalytic processes have gained growing interest as an efficient method to generate hydrogen by using clean energy sources and degrading various organic pollutants. The main obstacles that restrict efficient photoactivity are narrow light-response range and high rates of charge carrier recombination. The formation of heterojunction by combining a semiconductor with low VB and a semiconductor with high CB and a suitable band gap was found to be an efficient method to prepare more sensible materials with improved charge separation, appropriate oxidation and reduction ability, and enhanced visible-light harvesting. In our research, various binary heterojunction systems based on the wide-band gap (TiO₂) and narrow bandgap (g-C₃N₄, CuO, and Co₂O₃) photocatalyst were studied. The morphology, optical, and electrochemical properties of the photocatalysts were analyzed by X-ray diffraction (XRD), scanning electron microscopy (FE-SEM), N₂ physisorption, diffuse reflectance measurements (DRS), and Mott-Schottky analysis. The photocatalytic performance of the synthesized catalysts was tested in single and simultaneous systems. The synthesized photocatalysts displayed good adsorption capacity and enhanced visible-light photocatalytic performance. The mutual interactions of pollutants on their adsorption and degradation efficiency were investigated. The interfacial connection between photocatalyst constituents and the mechanism of the transport pathway of photogenerated charge species was discussed. A radical scavenger study revealed the interaction mechanisms of the photocatalyst constituents in single and multiple pollutant systems under solar and visible light irradiation, indicating the type of heterojunction system (Z scheme or type II).

Keywords: bandgap alignment, heterojunction, photocatalysis, reaction mechanism

Procedia PDF Downloads 79

Authors: Dinesh Pathaka, Tomas Wagnera, J. M. Nunzib

Abstract:

We investigated blends of MdPVV.PCBM.AIS for photovoltaic application. AgInSe2 powder was synthesized by sealing and heating the stoichiometric constituents in evacuated quartz tube ampule. Fine grinded AIS powder was dispersed in MD-MOPVV and PCBM with and without surfactant. Different concentrations of these particles were suspended in the polymer solutions and spin casted onto ITO glass. Morphological studies have been performed by atomic force microscopy and optical microscopy. The blend layers were also investigated by various techniques like XRD, UV-VIS optical spectroscopy, AFM, PL, after a series of various optimizations with polymers/concentration/deposition/ suspension/surfactants etc. XRD investigation of blend layers shows clear evidence of AIS dispersion in polymers. Diode behavior and cell parameters also revealed it. Bulk heterojunction hybrid photovoltaic device Ag/MoO3/MdPVV.PCBM.AIS/ZnO/ITO was fabricated and tested with standard solar simulator and device characterization system. The best performance and photovoltaic parameters we obtained was an open-circuit voltage of about Voc 0.54 V and a photocurrent of Isc 117 micro A and an efficiency of 0.2 percent using a white light illumination intensity of 23 mW/cm2. Our results are encouraging for further research on the fourth generation inorganic organic hybrid bulk heterojunction photovoltaics for energy. More optimization with spinning rate/thickness/solvents/deposition rates for active layers etc. need to be explored for improved photovoltaic response of these bulk heterojunction devices.

Keywords: thin films, photovoltaic, hybrid systems, heterojunction

Procedia PDF Downloads 245

Authors: Abdelaziz Rabehi

Abstract:

The current–voltage (I–V) characteristics of Au/GaN Schottky diodes were measured at room temperature. In addition, capacitance–voltage–frequency (C–V–f) characteristics are investigated by considering the interface states (Nss) at frequency range 100 kHz to 1 MHz. From the I–V characteristics of the Schottky diode, ideality factor (n) and barrier height (Φb) values of 1.22 and 0.56 eV, respectively, were obtained from a forward bias I–V plot. In addition, the interface states distribution profile as a function of (Ess − Ev) was extracted from the forward bias I–V measurements by taking into account the bias dependence of the effective barrier height (Φe) for the Schottky diode. The C–V curves gave a barrier height value higher than those obtained from I–V measurements. This discrepancy is due to the different nature of the I–V and C–V measurement techniques.

Keywords: Schottky diodes, frequency dependence, barrier height, interface states

Procedia PDF Downloads 279

Authors: Jaeun Park, Daekyoung Kim, Ho Kyoon Chung, Heeyeop Chae

Abstract:

Quantum dots light-emitting diodes (QD-LEDs) have been considered as the next generation display and lighting devices due to their excellent color purity, photo-stability solution process possibility and good device stability. Currently typical quantum dot light emitting diodes contain organic layers such as PEDOT:PSS and PVK for charge transport layers. To make quantum dot light emitting diodes (QD-LED) more stable, it is required to replace those acidic and relatively unstable organic charge transport layers with inorganic materials. Therefore all inorganic and solution processed quantum dot light emitting diodes can potentially be a solution to stable and cost-effective display devices. We studied solution processed NiO films to replace organic charge transport layers that are required for stable all-inorganic based light emitting diodes. The transition metal oxides can be made by various vacuum and solution processes, but the solution processes are considered more cost-effective than vacuum processes. In this work we investigated solution processed NiOx for a hole transport layer (HTL). NiOx, has valence band energy levels of 5.3eV and they are easy to make sol-gel solutions. Water vapor oxidation process was developed and applied to solution processed all-inorganic QD-LED. Turn-on voltage, luminance and current efficiency of QD in this work were 5V, 1800Cd/m2 and 0.5Cd/A, respectively.

Keywords: QD-LED, metal oxide solution, NiO, all-inorganic QD-LED device

Procedia PDF Downloads 723

Authors: F. Djaafar, B. Hadri, G. Bachir

Abstract:

This paper presents the design parameters for a thin film 3J InGaP/GaAs/Ge solar cell with a simulated maximum efficiency of 32.11% using Tcad Silvaco. Design parameters include the doping concentration, molar fraction, layers’ thickness and tunnel junction characteristics. An initial dual junction InGaP/GaAs model of a previous published heterojunction cell was simulated in Tcad Silvaco to accurately predict solar cell performance. To improve the solar cell’s performance, we have fixed meshing, material properties, models and numerical methods. However, thickness and layer doping concentration were taken as variables. We, first simulate the InGaP\GaAs dual junction cell by changing the doping concentrations and thicknesses which showed an increase in efficiency. Next, a triple junction InGaP/GaAs/Ge cell was modeled by adding a Ge layer to the previous dual junction InGaP/GaAs model with an InGaP /GaAs tunnel junction.

Keywords: heterojunction, modeling, simulation, thin film, Tcad Silvaco

Procedia PDF Downloads 337

Authors: Gobinda Gopal Khan, Ashutosh K. Singh, Debasish Sarkar

Abstract:

This study reports the facile fabrication of 1D ZnO/α-Fe2O3 semiconductor nano-heterostructures (SNHs), and we investigate the strong interfacial interactions at the heterojunction, resulting in novel multifunctionality in the hybrid structure. ZnO-coated α-Fe2O3 nanowires (NWs) have been prepared by combining electrodeposition and wet chemical methods. Significant improvement in electrical conductivity, photoluminescence, and room temperature magnetic properties have been observed for the ZnO/α-Fe2O3 SNHs over the pristine α-Fe2O3 NWs because of the contribution of the ZnO nanolayer. The increase in electrical conductivity in ZnO/α-Fe2O3 SNHs is because of the increase in free electrons in the conduction band of the SNHs due to the formation of type-II n-n band configuration at the heterojunction. The SNHs are found to exhibit enhanced visible green photoluminescence along with the UV emission at room temperature. The band-gap emission of the α-Fe2O3 NWs coupled to the defect emissions of the ZnO in SNHs can be attributed to the profound enhancement of the visible green luminescence. Ferromagnetism of the SNHs is found to be increased nearly five times in magnitude over the primeval α-Fe2O3 NWs, which can be ascribed to the exchange coupling of the interfacial spin at ZnO/α-Fe2O3 interface, the surface spin of ZnO nanolayer, along with the structural defects like the cation vacancies (VZn) and the singly ionized oxygen vacancies (Vo•) present in SNHs.

Keywords: nano-heterostructures, photoluminescence, electrical property, magnetism

Procedia PDF Downloads 229

Authors: Bouzaki Mohammed Moustafa, Benyoucef Boumediene, Benouaz Tayeb, Benhamou Amina

Abstract:

The ambient temperature and the defects density in the Hetero-junction with Intrinsic Thin layers solar cells (HIT) strongly influence their performances. In first part, we presented the bands diagram on the front/back simulated solar cell based on a-Si: H / c-Si (p)/a-Si:h. In another part, we modeled the following layers structure: ZnO/a-Si:H(n)/a-Si:H(i)/c-Si(p)/a-Si:H(p)/Ag where we studied the effect of the ambient temperature and the defects density in the gap of the crystalline silicon layer on the performance of the heterojunction solar cell with intrinsic layer (HIT).

Keywords: heterojunction solar cell, solar cell performance, bands diagram, ambient temperature, defect density

Procedia PDF Downloads 479

Authors: D. Rama Krishna, Y. Pandu Rangaiah

Abstract:

This paper presents the design of multiband reconfigurable antenna using PIN diodes for four iterations and all the four iterations have been validated by measuring return loss and pattern measurements of developed prototype antenna. The simulated and experimental data have demonstrated the concepts of a multiband reconfigurable antenna by switching OFF and ON of PIN diodes for multiple band frequencies. The technique has taken the advantage of a different number of radiating lengths with the use of PIN diode switches, each configuration resonating at multiband frequencies.

Keywords: frequency reconfigurable, meandered line multiband antenna, PIN diode, multiband frequencies

Procedia PDF Downloads 363

Authors: K. Echchakhaoui, E. Abdelmounim, J. Zbitou, H. Bennis, N. Ababssi, M. Latrach

Abstract:

In this paper a new design of a broadband microwave power limiter is presented and validated into simulation by using ADS software (Advanced Design System) from Agilent technologies. The final circuit is built on microstrip lines by using identical Zero Bias Schottky diodes. The power limiter is designed by Associating 3 stages Schottky diodes. The obtained simulation results permit to validate this circuit with a threshold input power level of 0 dBm until a maximum input power of 30 dBm.

Keywords: Limiter, microstrip, zero-biais, ADS

Procedia PDF Downloads 441

Authors: Radia Kamel

Abstract:

Considerable progress has been made in the development of bulk-heterojunction organic solar cells (OSCs) based on a blend of p-type and n-type organic semiconductors. To optimize the interfacial properties between the active layer and the electrode, a cathode buffer layer (CBL) is introduced. This layer can reduce the leakage current, increasing the open-circuit voltage and the fill factor while improving the OSC stability. In this work, the performance of PM6:Y6 OSC with 1-Chloronaphthalene as an additive is examined. To accomplish this, three CBLs PNDIT-F3N-Br, ZrAcac, and PDINO, are compared using the conventional configuration. The device with PNDIT-F3N-Br as CBL exhibits the highest power conversion efficiency of 16.04%. The results demonstrate that modifying the cathode buffer layer is crucial for achieving high-performance OSCs.

Keywords: bulk heterojunction, cathode buffer layer, efficiency, organic solar cells

Procedia PDF Downloads 135

Authors: Josue Javier Martinez Flores, Jaime Alvarez Quintana

Abstract:

A thermal rectifier consists of a device which can load a different heat flow which depends on the direction of that flow. That device is a thermal diode. It is well known that heat transfer in solids basically depends on the electrical, magnetic and crystalline nature of materials via electrons, magnons and phonons as thermal energy carriers respectively. In the present research, we have synthesized polycrystalline Ni-Cu alloys and identified the Curie temperatures; and we have observed that by way of secondary phase transitions, it is possible manipulate the heat conduction in solid state thermal diodes via transition temperature. In this sense, we have succeeded in developing solid state thermal diodes with a control gate through the Curie temperature via the activation and deactivation of magnons in Ni-Cu ferromagnetic alloys at room temperature. Results show thermal diodes with thermal rectification factors up to 1.5. Besides, the performance of the electrical rectifiers can be controlled by way of alloy Cu content; hence, lower Cu content alloys present enhanced thermal rectifications factors than higher ones.

Keywords: thermal rectification, Curie temperature, ferromagnetic alloys, magnons

Procedia PDF Downloads 219

Authors: Anil Kawan, Soon Jae Yu, Jong Min Park

Abstract:

GaN-based 365 nm wavelength ultraviolet (UV) light emitting diodes (LED) have various applications: curing, molding, purification, deodorization, and disinfection etc. However, their usage is limited by very low output power, because of the light absorption in the GaN layers. In this study, we demonstrate a method utilizing removal of 365 nm absorption layer buffer GaN and thinning the n-type GaN so as to improve the light extraction efficiency of the GaN-based 365 nm UV LED. The UV flip chip LEDs of chip size 1.3 mm x 1.3 mm were fabricated using GaN epilayers on a sapphire substrate. Via-hole n-type contacts and highly reflective Ag metal were used for efficient light extraction. LED wafer was aligned and bonded to AlN carrier wafer. To improve the extraction efficiency of the flip chip LED, sapphire substrate and absorption layer buffer GaN were removed by using laser lift-off and dry etching, respectively. To further increase the extraction efficiency of the LED, exposed n-type GaN thickness was reduced by using inductively coupled plasma etching.

Keywords: extraction efficiency, light emitting diodes, n-GaN thinning, ultraviolet

Procedia PDF Downloads 394

Authors: S. J. Bindhu, Edwina G. Rodrigues, Jijo Balakrishnan

Abstract:

A grid-connected photovoltaic (PV) micro inverter with good performance properties is proposed in this paper. The proposed inverter with a quadrupler, having more efficiency and less voltage stress across the diodes. The stress that come across the diodes that use in the inverter section is considerably low in the proposed converter, also the protection scheme that we provided can eliminate the chances of the error due to fault. The proposed converter is implemented using perturb and observe algorithm so that the fluctuation in the voltage can be reduce and can attain maximum power point. Finally, some simulation and experimental results are also presented to demonstrate the effectiveness of the proposed converter.

Keywords: DC-DC converter, MPPT, quadrupler, PV panel

Procedia PDF Downloads 814

Authors: P. Joshna, Souvik Kundu

Abstract:

Detection of ultraviolet (UV) radiation is very important as it has exhibited a profound influence on humankind and other existences, including military equipment. In this work, a self-powered UV photodetector was reported based on oxides heterojunctions. The thin films of p-type nickel oxide (NiO) and n-type reduced graphene oxide (rGO) were used for the formation of p-n heterojunction. Low-Cost and low-temperature chemical synthesis was utilized to prepare the oxides, and the spin coating technique was employed to deposit those onto indium doped tin oxide (ITO) coated glass substrates. The top electrode platinum was deposited utilizing physical vapor evaporation technique. NiO offers strong UV absorption with high hole mobility, and rGO prevents the recombination rate by separating electrons out from the photogenerated carriers. Several structural characterizations such as x-ray diffraction, atomic force microscope, scanning electron microscope were used to study the materials crystallinity, microstructures, and surface roughness. On one side, the oxides were found to be polycrystalline in nature, and no secondary phases were present. On the other side, surface roughness was found to be low with no pit holes, which depicts the formation of high-quality oxides thin films. Whereas, x-ray photoelectron spectroscopy was employed to study the chemical compositions and oxidation structures. The electrical characterizations such as current-voltage and current response were also performed on the device to determine the responsivity, detectivity, and external quantum efficiency under dark and UV illumination. This p-n heterojunction device offered faster photoresponse and high on-off ratio under 365 nm UV light illumination of zero bias. The device based on the proposed architecture shows the efficacy of the oxides heterojunction for efficient UV photodetection under zero bias, which opens up a new path towards the development of self-powered photodetector for environment and health monitoring sector.

Keywords: chemical synthesis, oxides, photodetectors, spin coating

Procedia PDF Downloads 94

Authors: A. Lakrim, D. Tahri

Abstract:

This paper sets out a behavioral macro-model of a Merged PiN and Schottky (MPS) diode based on silicon carbide (SiC). This model holds good for both static and dynamic electrothermal simulations for industrial applications. Its parameters have been worked out from datasheets curves by drawing on the optimization method: Simulated Annealing (SA) for the SiC MPS diodes made available in the industry. The model also adopts the Analog Behavioral Model (ABM) of PSPICE in which it has been implemented. The thermal behavior of the devices was also taken into consideration by making use of Foster’ canonical network as figured out from electro-thermal measurement provided by the manufacturer of the device.

Keywords: SiC MPS diode, electro-thermal, SPICE model, behavioral macro-model

Procedia PDF Downloads 382

Authors: Khursheed Ahmad, Shaikh M. Mobin

Abstract:

In this work, we have developed a highly stable planar heterojunction perovskite solar cells (PSCs) with a architecture (ITO/GO/PEDOT:PSS/MAPbI3/PCBM/Carbon tape). The PSCs was fabricated under air using GO/PEDOT:PSS as hole transport layer while the carbon tape used as a back contact to complete the device. The fabricated PSCs device exhibited good stability and performance in terms of power conversion efficiency of 5.2%. The PSCs devices were exposed to ambient condition for 4 days which shows excellent stability confirmed by XRD analysis. We believed that the stability of the planar heterojunction perovskite solar cell may be due the presence of GO which inhibits the direct contact between PEDOT:PSS and MAPbI3.

Keywords: graphene oxide, perovskite solar cells, hole transport layer, PEDOT:PSS

Procedia PDF Downloads 154

Authors: S. M. Giripunje, Shikha Jindal

Abstract:

Zinc sulphide (ZnS) quantum dots (QDs) were synthesized successfully via simple sonochemical method. X-ray diffraction (XRD), scanning electron microscopy (SEM) and high resolution transmission electron microscopy (HRTEM) analysis revealed the average size of QDs of the order of 3.7 nm. The band gap of the QDs was tuned to 5.2 eV by optimizing the synthesis parameters. UV-Vis absorption spectra of ZnS QD confirm the quantum confinement effect. Fourier transform infrared (FTIR) analysis confirmed the formation of single phase ZnS QDs. To fabricate the diode, blend of ZnS QDs and P3HT was prepared and the heterojunction of PEDOT:PSS and the blend was formed by spin coating on indium tin oxide (ITO) coated glass substrate. The diode behaviour of the heterojunction was analysed, wherein the ideality factor was found to be 2.53 with turn on voltage 0.75 V and the barrier height was found to be 1.429 eV. ZnS-Graphene QDs nanocomposite was characterised for the surface morphological study. It was found that the synthesized ZnS QDs appear as quasi spherical particles on the graphene sheets. The average particle size of ZnS-graphene nanocomposite QDs was found to be 8.4 nm. From voltage-current characteristics of ZnS-graphene nanocomposites, it is observed that the conductivity of the composite increases by 10⁴ times the conductivity of ZnS QDs. Thus the addition of graphene QDs in ZnS QDs enhances the mobility of the charge carriers in the composite material. Thus, the graphene QDs, with high specific area for a large interface, high mobility and tunable band gap, show a great potential as an electron-acceptors in photovoltaic devices.

Keywords: graphene, heterojunction, quantum confinement effect, quantum dots(QDs), zinc sulphide(ZnS)

Procedia PDF Downloads 128

Authors: K. Al-Heuseen, M. R. Hashim

Abstract:

The current-voltage (I-V) characteristics of Pd/n-GaN Schottky barrier were studied at temperatures over room temperature (300-470K). The values of ideality factor (n), zero-bias barrier height (φB0), flat barrier height (φBF) and series resistance (Rs) obtained from I-V-T measurements were found to be strongly temperature dependent while (φBo) increase, (n), (φBF) and (Rs) decrease with increasing temperature. The apparent Richardson constant was found to be 2.1x10-9 Acm-2K-2 and mean barrier height of 0.19 eV. After barrier height inhomogeneities correction, by assuming a Gaussian distribution (GD) of the barrier heights, the Richardson constant and the mean barrier height were obtained as 23 Acm-2K-2 and 1.78eV, respectively. The corrected Richardson constant was very closer to theoretical value of 26 Acm-2K-2.

Keywords: electrical properties, Gaussian distribution, Pd-GaN Schottky diodes, thermionic emission

Procedia PDF Downloads 242

Authors: Sankara Rao Gollu, Ramakant Sharma, G. Srinivas, Souvik Kundu, Dipti Gupta

Abstract:

In recent years, bulk heterojunction organic solar cells (BHJ OSCs) based on polymer–fullerene attracted a large research attention due to their numerous advantages such as light weight, easy processability, eco-friendly, low-cost, and capability for large area roll-to-roll manufacturing. BHJ OSCs usually suffer from insufficient light absorption due to restriction on keeping thin ( < 150 nm) photoactive layer because of small exciton diffusion length ( ~ 10 nm) and low charge carrier mobilities. It is thus highly desirable that light absorption as well as charge transport properties are enhanced by alternative methods so as to improve the device efficiency. In this work, therefore, we have focused on the strategy of incorporating metallic nanostructures in the active layer or charge transport layer to enhance the absorption and improve the charge transport.

Keywords: organic solar cell, efficiency, bulk heterojunction, polymer-fullerene

Procedia PDF Downloads 370

Authors: Amal Aljohani, Ahmed Iraqi

Abstract:

Emitting materials with thermally activated delayed fluorescence (TADF) properties as the third generation of organic light-emitting diodes (OLEDs) have received much attention as a modern class of highly efficient emitters because such properties enable the harvesting of both singlet and triplet excitons in EL applications without the doping with complexes of scarce noble metals such as platinum and iridium. Improved molecular design of TADF molecules and applied materials exhibiting internal electroluminescence (EL) with quantum efficiencies of nearly 100% has been achieved being. A2B3 hyperbranched polymers based on new derivatives containing silane core units serving as host materials for thermally activated delayed fluorescence (TADF) guest molecules have been designed and synthesized through several steps, including the synthesis of tetrakis(4-bromophenyl)silane, bis(4-(9H-carbazol-9-yl)phenyl)bis(4-bromophenyl)silane,bis(4-(9H-carbazol-9 yl)phenyl)bis(4-methoxyphenyl)silane and bis(4-(9H-carbazol-9-yl)phenyl)bis(4hydroxyphenyl)silane. This monomer has been used successfully used along with 1,1,1-tri-(p-tosyloxymethyl)-propane to prepare A2B3 hyperbranched polymers via step-growth polymerization. The characterization and the properties of these new host polymers will be presented and discussed in this contribution.

Keywords: carbazole, organic light emitting diodes, thermally activated delayed fluorescence, donor-acceptor, host and guest interaction

Procedia PDF Downloads 122