Search results for: breakdown voltage

Authors: N. K. A. M. Galvão, A. Godoy Jr., A. L. J. Pereira, G. V. Martins, R. S. Pessoa, H. S. Maciel, M. A. Fraga

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Silicon carbide (SiC) is a wide band-gap semiconductor material with very attractive properties, such as high breakdown voltage, chemical inertness, and high thermal and electrical stability, which makes it a promising candidate for several applications, including microelectromechanical systems (MEMS) and electronic devices. In MEMS manufacturing, the etching process is an important step. It has been proved that wet etching of SiC is not feasible due to its high bond strength and high chemical inertness. In view of this difficulty, the plasma etching technique has been applied with paramount success. However, in most of these studies, only the determination of the etching rate and/or morphological characterization of SiC, as well as the analysis of the reactive ions present in the plasma, are lowly explored. There is a lack of results in the literature on the chemical and structural properties of SiC after the etching process [4]. In this work, we investigated the etching process of sputtered amorphous SiC thin films on Si substrates in a reactive ion etching (RIE) system using sulfur hexafluoride (SF6) gas under different RF power. The results of the chemical and structural analyses of the etched films revealed that, for all conditions, a SiC crystallization occurred, in addition to fluoride contamination. In conclusion, we observed that SiC crystallization is a side effect promoted by structural, morphological and chemical changes caused by RIE SF6 etching process.

Keywords: plasma etching, plasma deposition, Silicon Carbide, microelectromechanical systems

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Authors: Toushik Maiti, Saibal Chatterjee, Kamaljyoti Gogoi, Arijit Basuray

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Eastern Regional(ER) Grid and North Eastern Regional (NER) Grid are two major grids of Eastern Part of India. Both of the grid consists of voltage level 765kV, 400 kV, 220 kV and numerous buses at lower voltage range. Eastern Regional Grid and North Eastern Regional Grid are not only connected among themselves but are also connected to various other grids of India. ER and NER Grid having various HVDC lines or back to back systems which form the total network. The studied system comprises of 340 buses of different voltage levels and transmission lines running over a length of 32089 km. The validation of load flow has been done using IEEE STANDARD 30 bus system. The power flow simulation analysis has been performed after synchronizing both the Eastern Grid and North-Eastern Regional Grid of India using Power System Simulators for Engineering (PSS®E) Important inferences has been drawn from the study.

Keywords: HVDC, load flow, PSS®E, unsymmetrical and symmetrical faults

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Authors: Adedayo Ajayi, Patrick Luk, Liyun Lao

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This paper studies the supportive needs for the electrical infrastructure of the green airport. In particular, the core objective revolves around the choice of electric grid configuration required to meet the expected electrified loads, i.e., the taxiing and charging loads of hybrid /pure electric aircraft in the airport. Further, reliability and resilience are critical aspects of a newly proposed grid; the concept of mobile energy storage as energy as a service (EAAS) for grid support in the proposed green airport is investigated using an autonomous electric taxiing robot (A-ETR) at a case study (Cranfield Airport). The performance of the model is verified and validated through DigSILENT power factory simulation software to compare the networks in terms of power quality, short circuit fault levels, system voltage profile, and power losses. Contingency and reliability index analysis are further carried out to show the potential of EAAS on the grid. The results demonstrate that the low voltage a.c network ( LVAC) architecture gives better performance with adequate compensation than the low voltage d.c (LVDC) microgrid architecture for future green airport electrification integration. And A-ETR can deliver energy as a service (EaaS) to improve the airport's electrical power system resilience and energy supply.

Keywords: reliability, voltage profile, flightpath 2050, green airport

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Authors: Syakirin O. Yong, Nasrudin A. Rahim, Bilal M. Eid, Buray Tankut

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The aim of this paper is to develop an ultra-fast gate driver for Silicon Carbide (SiC) based switching device applications such as AC/DC DC/AC converters. Wide bandgap semiconductors such as SiC switches are growing rapidly nowadays due to their numerous capabilities such as faster switching, higher power density and higher voltage level. Wide band-gap switches can work properly on high frequencies such 50-250 kHz which is very useful for many power electronic applications such as solar inverters. Increasing the frequency minimizes the output filter size and system complexity however, this causes huge spike between MOSFET’s drain and source leg which leads to the failure of MOSFET if the voltage rating is exceeded. This paper investigates and concludes the optimum design for a gate drive board for SiC MOSFET switches without causing spikes and noises.

Keywords: PV system, lithium-ion, charger, constant current, constant voltage, renewable energy

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Authors: Abid Khan

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A recognized engineering challenge is related to personnel protection from fatal arc flash incident energy in the line side of the 480-volt switchgear incomer breakers during maintenance activities. The incident energy is typically high due to slow fault clearance, and it can be higher than the available personnel protective equipment (PPE) ratings. A fault in this section of the switchgear is cleared by breakers or fuses in the upstream higher voltage system (4160 Volt or higher). The current reflection in the higher voltage upstream system for a fault in the 480-volt switchgear is low, the clearance time is slower, and the inversely proportional incident energy is hence higher. The installation of overcurrent protection at a 480-volt system upstream of the incomer breaker will operate fast enough and trips the upstream higher voltage breaker when a fault develops at the incomer breaker. Therefore, fault current reduction as reflected in the upstream higher voltage system is eliminated. Since the fast overcurrent protection is permanently installed, it is always functional, does not require human interventions, and eliminates exposure to human errors. It is installed at the maintenance activities location, and its operations can be locally monitored by craftsmen during maintenance activities.

Keywords: arc flash, mitigation, maintenance switch, energy level

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Authors: Zoran Herceg, Višnja Stulić, Tomislava Vukušić, Anet Režek Jambrak

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High voltage electrical discharge is a new technology used for inactivation of pathogen microorganisms. Pathogen yeasts can cause diseases in humans if they are ingested. Nowadays new technologies have become the focus of researching all over the world. Rhodotorula is known as yeast that can cause diseases in humans. The aim of this study was to examine whether the high voltage electrical discharge treatment generated in gas phase has an influence on yeast reduction and recovery of Rhodotorula spp 74 in pure culture. Rhodotorula spp. 74 was treated in 200 mL of model solution. Treatment time (5 and 10 min), frequency (60 and 90 Hz) and injected gas (air or argon 99,99%) were changed. Titanium high voltage needle was used as high voltage electrode (positive polarity) through which air or argon was injected at the gas flow of 0.6 L/min. Experimental design and statistical analyses were obtained by Statgraphics Centurion software (StatPoint Technologies, Inc., VA, USA). The best inactivation rate 1.7 log10 reduction was observed after the 10 min of treatment, frequency of 90 Hz and injected air. Also with a longer treatment time inactivation rate was higher. After the 24 h recovery of treated samples was observed. Therefore the further optimization of method is needed to understand the mechanism of yeasts inactivation and cells recovery after the treatment. Acknowledgements: The authors would like to acknowledge the support by Croatian Science Foundation and research project ‘Application of electrical discharge plasma for preservation of liquid foods’.

Keywords: rhodotorula spp. 74, electrical discharge plasma, inactivation, stress response

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Authors: Abhimanyu Kumar, Chirag Gupta

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This work presents a comprehensive study on the employment of Model Predictive Control (MPC) for a three-phase voltage-source inverter to regulate the output voltage efficiently. The inverter is modeled via the Clarke Transformation, considering a scenario where the load is unknown. An LC filter model is developed, demonstrating its efficacy in Total Harmonic Distortion (THD) reduction. The system, when implemented with fault-tolerant multilevel inverter topologies, ensures reliable operation even under fault conditions, a requirement that is paramount with the increasing dependence on renewable energy sources. The research also integrates a Fuzzy Logic based fault tolerance system which identifies and manages faults, ensuring consistent inverter performance. The efficacy of the proposed methodology is substantiated through rigorous simulations and comparative results, shedding light on the voltage prediction efficiency and the robustness of the model even under fault conditions.

Keywords: total harmonic distortion, fuzzy logic, renewable energy sources, MLI

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Authors: T. Sattarpour, D. Nazarpour

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This paper investigates the effect of simultaneous placement of DGs and smart meters (SMs), on voltage profile improvement in active distribution networks (ADNs). A substantial center of attention has recently been on responsive loads initiated in power system problem studies such as distributed generations (DGs). Existence of responsive loads in active distribution networks (ADNs) would have undeniable effect on sizing and siting of DGs. For this reason, an optimal framework is proposed for sizing and siting of DGs and SMs in ADNs. SMs are taken into consideration for the sake of successful implementing of demand response programs (DRPs) such as direct load control (DLC) with end-side consumers. Looking for voltage profile improvement, the optimization procedure is solved by genetic algorithm (GA) and tested on IEEE 33-bus distribution test system. Different scenarios with variations in the number of DG units, individual or simultaneous placing of DGs and SMs, and adaptive power factor (APF) mode for DGs to support reactive power have been established. The obtained results confirm the significant effect of DRPs and APF mode in determining the optimal size and site of DGs to be connected in ADN resulting to the improvement of voltage profile as well.

Keywords: active distribution network (ADN), distributed generations (DGs), smart meters (SMs), demand response programs (DRPs), adaptive power factor (APF)

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Authors: T. Boonraksa, B. Marungsri

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This paper presents the experimental results on role of ionic solutions affect water treeing propagation in cross-linked polyethylene insulation for high voltage cable. To study the water treeing expansion due to the ionic solutions, discs of 4mm thickness and 4cm diameter were taken from 115 kV XLPE insulation cable and were used as test specimen in this study. Ionic solutions composed of CuSO4, FeSO4, Na2SO4 and K2SO4 were used. Each specimen was immersed in 0.1 mole ionic solutions and was tested for 120 hrs. under a voltage stress at 7 kV AC rms, 1000 Hz. The results show that Na2SO4 and CuSO4solutions play an important role in the expansion of water treeing and cause degradation of the cross-linked polyethylene (XLPE) in the presence of the applied electric field.

Keywords: ionic solutions, water treeing, water treeing expansion, cross-linked polyethylene (XLPE)

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Authors: Luc Conti, Dimitry Dumont-Fillon, Harald van Lintel, Eric Chappel

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Flow control valves comprise a silicon flexible membrane that deflects against a substrate, usually made of glass, containing pillars, an outlet hole, and anti-stiction features. However, there is a strong interest in using silicon instead of glass as substrate material, as it would simplify the process flow by allowing the use of well controlled anisotropic etching. Moreover, specific devices demanding a bending of the substrate would also benefit from the inherent outstanding mechanical strength of monocrystalline silicon. Unfortunately, direct Si-Si bonding is not easily achieved with highly structured wafers since residual stress may prevent the good adhesion between wafers. Using a thermoplastic polymer, such as parylene, as intermediate layer is not well adapted to this design as the wafer-to-wafer alignment is critical. An alternative anodic bonding method using an intermediate borosilicate layer has been successfully tested. This layer has been deposited onto the silicon substrate. The bonding recipe has been adapted to account for the presence of the SOI buried oxide and intermediate glass layer in order not to exceed the breakdown voltage. Flow control valves dedicated to infusion of viscous fluids at very high pressure have been made and characterized. The results are compared to previous data obtained using the standard anodic bonding method.

Keywords: anodic bonding, evaporated glass, flow control valve, drug delivery

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Authors: Mansa Radhakrishnan, Anwar Ali, Muhammad Rizwan Mughal

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Many universities around the world are working on modular and low budget architecture of small spacecraft to reduce the development cost of the overall system. This paper focuses on the design of a modular solar power harvesting system for a hexagonal-shaped small satellite. The designed solar power harvesting systems are composed of solar panels and power converter subsystems. The solar panel is composed of solar cells mounted on the external face of the printed circuit board (PCB), while the electronic components of power conversion are mounted on the interior side of the same PCB. The solar panel with dimensions 16.5cm × 99cm is composed of 36 solar cells (each solar cell is 4cm × 7cm) divided into four parallel banks where each bank consists of 9 solar cells. The output voltage of a single solar cell is 2.14V, and the combined output voltage of 9 series connected solar cells is around 19.3V. The output voltage of the solar panel is boosted to the satellite power distribution bus voltage level (28V) by a boost converter working on a constant voltage maximum power point tracking (MPPT) technique. The solar panel module is an eight-layer PCB having embedded coil in 4 internal layers. This coil is used to control the attitude of the spacecraft, which consumes power to generate a magnetic field and rotate the spacecraft. As power converter and distribution subsystem components are mounted on the PCB internal layer, therefore it is mandatory to do thermal analysis in order to ensure that the overall module temperature is within thermal safety limits. The main focus of the overall design is on compactness, miniaturization, and efficiency enhancement.

Keywords: small satellites, power subsystem, efficiency, MPPT

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Authors: Debabrata Bhadra, B. K. Chaudhuri

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The operation of organic thin film transistors (OFETs) with low voltage is currently a prevailing issue. We have fabricated anthracene thin-film transistor (TFT) with an ultrathin layer (~450nm) of Poly-vinylidene fluoride (PVDF)/CuO nanocomposites as a gate insulator. We obtained a device with excellent electrical characteristics at low operating voltages (<1V). Different layers of the film were also prepared to achieve the best optimization of ideal gate insulator with various static dielectric constant (εr ). Capacitance density, leakage current at 1V gate voltage and electrical characteristics of OFETs with a single and multi layer films were investigated. This device was found to have highest field effect mobility of 2.27 cm2/Vs, a threshold voltage of 0.34V, an exceptionally low sub threshold slope of 380 mV/decade and an on/off ratio of 106. Such favorable combination of properties means that these OFETs can be utilized successfully as voltages below 1V. A very simple fabrication process has been used along with step wise poling process for enhancing the pyroelectric effects on the device performance. The output characteristic of OFET after poling were changed and exhibited linear current-voltage relationship showing the evidence of large polarization. The temperature dependent response of the device was also investigated. The stable performance of the OFET after poling operation makes it reliable in temperature sensor applications. Such High-ε CuO/PVDF gate dielectric appears to be highly promising candidates for organic non-volatile memory and sensor field-effect transistors (FETs).

Keywords: organic field effect transistors, thin film transistor, gate dielectric, organic semiconductor

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Authors: J. R. Lee, E. V. Lau

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Ionic wind is developed when high voltage is supplied to an anode and a grounded cathode in a gaseous medium. This paper studies the ionic wind profile with different anode configurations, the relationship between electrode gap against the voltage supplied and finally a comparison of the heat transfer coefficient of ionic wind over a horizontal flat plate against a conventional fan experimentally. It is observed that increase in the distance between electrodes decreases at a rate of 1-e-0.0206x as the voltage supply is increased until a distance of 3.1536cm. It is also observed that the wind speed produced by ionic wind is stronger, 2.7ms-1 at 2W compared to conventional fan, 2.5ms-1 at 2W but the wind produced decays at a fast exponential rate and is more localized as compared to conventional fan wind that decays at a slower exponential rate and is less localized. Next, it is found out that the ionic wind profile is the same regardless of the position of the anode relative to the cathode. Lastly, it is discovered that ionic wind produced a heat transfer coefficient that is almost 1.6 times higher compared to a conventional fan with Nusselt number reaching 164 compared to 102 for conventional fan.

Keywords: conventional fan, heat transfer, ionic wind, wind profile

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Authors: Frimpong Kyeremeh, Albert Y. Appiah, Ben B. K. Ayawli

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Energy storage system (ESS) is an essential part of a microgrid (MG) because of its immense benefits to the economics and the stability of MG. For a direct current (DC) MG (DCMG) in which the generating units are mostly variable renewable energy generators, DC bus voltage fluctuation is inevitable; hence ESS is vital in managing the mismatch between load demand and generation. Besides, to accrue the maximum benefits of ESS in the microgrid, there is the need for proper sizing and location of the ESSs. In this paper, a performance comparison is made between two configurations of ESS; distributed battery energy storage system (D-BESS) and an aggregated (centralized) battery energy storage system (A-BESS), on the basis of stability and operational cost for a DCMG. The configuration consists of four households with rooftop PV panels and a wind turbine. The objective is to evaluate and analyze the technical efficiencies, cost effectiveness as well as controllability of each configuration. The MG is first modelled with MATLAB Simulink then, a mathematical model is used to determine the optimal size of the BESS that minimizes the total operational cost of the MG. The performance of the two configurations would be tested with simulations. The two configurations are expected to reduce DC bus voltage fluctuations, but in the cases of voltage stability and optimal cost, the best configuration performance will be determined at the end of the research. The work is in progress, and the result would help MG designers and operators to make the best decision on the use of BESS for DCMG configurations.

Keywords: aggregated energy storage system, DC bus voltage, DC microgrid, distributed battery energy storage, stability

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Authors: M. Fadlallah, G. Ghibaudo, C. G. Theodorou

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The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.

Keywords: low-frequency noise, random telegraph noise, dynamic variation, SRRV

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Authors: Jiajia Yao, Guanlin Wu, Fang Liu, Junshuai Xue, Yue Hao

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As the production process of self-standing GaN substrates evolves, the commercialization of low dislocation density, large-scale, semi-insulating self-standing GaN substrates is gradually becoming a reality. This advancement has given rise to increased interest in GaN materials' homoepitaxial technology. However, at the homoepitaxial interface, there are considerable concentrations of impurity elements, including C, Si, and O, which generate parasitic leakage channels at the re-growth junction. This phenomenon results in leaked HEMTs that prove difficult to switch off, rendering them effectively non-functional. The emergence of leakage channels can also degrade the high-frequency properties and lower the power devices' breakdown voltage. In this study, the uniform epitaxy of AlGaN/GaN heterojunction with high electron mobility was accomplished through the surface treatment of the GaN substrates prior to growth and the design of the AlN isolation layer structure. By employing a procedure combining gallium atom in-situ cleaning and plasma nitridation, the C and O impurity concentrations at the homoepitaxial interface were diminished to the scale of 10¹⁷ cm-³. Additionally, the 1.5 nm nitrogen-rich AlN isolation layer successfully prevented the diffusion of Si impurities into the GaN channel layer. The result was an AlGaN/GaN heterojunction with an electron mobility of 1552 cm²/Vs and an electron density of 1.1 × 10¹³ cm-² at room temperature, obtained on a Fe-doped semi-insulating GaN substrate.

Keywords: MBE, AlGaN/GaN, homogenerous epitaxy, HEMT

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Authors: Yashar Haghighatfar, Shahrzad Mirhosseini

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Pull-in instability is a nonlinear and crucial effect that is important for the design of microelectromechanical system devices. In this paper, the appropriate electrostatic voltage range is determined by measuring fluid flow pressure via micro pressure sensor based microbeam. The microbeam deflection contains two parts, the static and perturbation deflection of static. The second order equation regarding the equivalent stiffness, mass and damping matrices based on Galerkin method is introduced to predict pull-in instability due to the external voltage. Also the reduced order method is used for solving the second order nonlinear equation of motion. Furthermore, in the present study, the micro capacitive pressure sensor is designed for measuring special fluid flow pressure range. The results show that the measurable pressure range can be optimized, regarding damping field and external voltage.

Keywords: MEMS, pull-in instability, electrostatically actuated microbeam, reduced order method

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Authors: Deepak M. Sajnekar, S. B. Deshpande, R. M. Mohril

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At present many rotary excitation control system are using analog type of Automatic Voltage Regulator which now started to replace with the digital automatic voltage regulator which is provided with PID controller and tuning of PID controller is a challenging task. The cases where digital excitation control system is used tuning of PID controller are still carried out by pole placement method. Tuning of PID controller used for static excitation control system is not challenging because it does not involve exciter time constant. This paper discusses two methods of tuning PID controller i.e. Pole placement method and pole zero cancellation method. GUI prepared for both the methods on the platform of MATLAB. Using this GUI, performance results and time required for tuning for both the methods are compared. Sensitivity of the methods is also presented with parameter variation like loop gain ‘K’ and exciter time constant ‘te’.

Keywords: digital excitation system, automatic voltage regulator, pole placement method, pole zero cancellation method

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Authors: Ali Ravangard, S. Mohammadi

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Shunt Capacitors have several uses in the electric power systems. They are utilized as sources of reactive power by connecting them in line-to-neutral. Electric utilities have also connected capacitors in series with long lines in order to reduce its impedance. This is particularly common in the transmission level, where the lines have length in several hundreds of kilometers. However, this post will generally discuss shunt capacitors. In distribution systems, shunt capacitors are used to reduce power losses, to improve voltage profile, and to increase the maximum flow through cables and transformers. This paper presents a new method to determine the optimal locations and economical sizing of fixed and/or switched shunt capacitors with a view to power losses reduction and voltage stability enhancement. For solving the problem, a new enhanced cuckoo optimization algorithm is presented.The proposed method is tested on distribution test system and the results show that the algorithm suitable for practical implementation on real systems with any size.

Keywords: capacitor placement, power losses, voltage stability, radial distribution systems

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Authors: Karandeep Kaur

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This paper presents the design of power amplifier (PA) for mmWave communication systems. The designed amplifier uses GlobalFoundries 22 FDX technology and works at an operational frequency of 140 GHz in the D-Band. With a supply voltage of 0.8V for the super low threshold voltage transistors, the amplifier is biased in class AB and has a total current consumption of 50 mA. The measured saturated output power from the power amplifier is 5.6 dBm with an output-referred 1dB-compression point of 1.6dBm. The measured gain of PA is 19 dB with 3 dB-bandwidth ranging from 120 GHz to 140 GHz. The chip occupies an area of 795µm × 410µm.

Keywords: mmWave communication system, power amplifiers, 22FDX, D-Band, cross-coupled capacitive neutralization

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Authors: Ali Raheli, Rahim Habibifar, Behzad Mohammadi-Alasti, Mahdi Abbasgholipour

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This paper presents vibration behavior of a FGM micro-beam and its pull-in instability under a nonlinear electrostatic pressure. An exponential function has been applied to show the continuous gradation of the properties along thickness. Nonlinear integro-differential-electro-mechanical equation based on Euler–Bernoulli beam theory has been derived. The governing equation in the static analysis has been solved using Step-by-Step Linearization Method and Finite Difference Method. Fixed points or equilibrium positions and singular points have been shown in the state control space. In order to find the response to a step DC voltage, the nonlinear equation of motion has been solved using Galerkin-based reduced-order model and time histories and phase portrait for different applied voltages have been shown. The effects of electrostatic pressure on stability of FGM micro-beams having various amounts of the ceramic constituent have been investigated.

Keywords: FGM, MEMS, nonlinear vibration, electrical, dynamic pull-in voltage

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Authors: M. Rashid Hussain, Shady S. Refaat

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The high voltage power transformer is the most essential part of the electrical power utilities. Reliability on the transformers is the utmost concern, and any failure of the transformers can lead to catastrophic losses in electric power utility. The causes of transformer failure include insulation failure by partial discharge, core and tank failure, cooling unit failure, current transformer failure, etc. For the study of power transformer defects, finite element analysis (FEA) can provide valuable information on the severity of defects. FEA provides a more accurate representation of complex geometries because they consider thermal, electrical, and environmental influences on the insulation models to obtain basic characteristics of the insulation system during normal and partial discharge conditions. The purpose of this paper is the time domain analysis of defects 3D model of high voltage power transformer using FEA to study the electric field distribution at different points on the defects.

Keywords: power transformer, finite element analysis, dielectric response, partial discharge, insulation

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Authors: Barenten Suciu, Yuya Nakamoto

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Power generation effect, obtained by inserting a piezo- electric sheet in the backlash clearance of a circular arc helical gear, is evaluated. Such type of screw gear is preferred since, in comparison with the involute tooth profile, the circular arc profile leads to reduced stress-concentration effects, and improved life of the piezoelectric film. Firstly, geometry of the circular arc helical gear, and properties of the piezoelectric sheet are presented. Then, description of the test-rig, consisted of a right-hand thread gear meshing with a left-hand thread gear, and the voltage measurement procedure are given. After creating the tridimensional (3D) model of the meshing gears in SolidWorks, they are 3D-printed in acrylonitrile butadiene styrene (ABS) resin. Variation of the generated voltage versus time, during a meshing cycle of the circular arc helical gear, is measured for various values of the center distance. Then, the change of the maximal, minimal, and peak-to-peak voltage versus the center distance is illustrated. Optimal center distance of the gear, to achieve voltage maximization, is found and its significance is discussed. Such results prove that the contact pressure of the meshing gears can be measured, and also, the electrical power can be generated by employing the proposed technique.

Keywords: circular arc helical gear, contact problem, optimal center distance, piezoelectric sheet, power generation

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Authors: Yasunori Kobori, Li Quan, Shu Wu, Nizam Mohyar, Zachary Nosker, Nobukazu Tsukiji, Nobukazu Takai, Haruo Kobayashi

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This paper proposes an electrolytic capacitor-less transformer-less AC-DC LED driver with a current ripple canceller. The proposed LED driver includes a diode bridge, a buck-boost converter, a negative feedback controller and a current ripple cancellation circuit. The current ripple canceller works as a bi-directional current converter using a sub-inductor, a sub-capacitor and two switches for controlling current flow. LED voltage is controlled in order to regulate LED current by the negative feedback controller using a current sense resistor. There are two capacitors which capacitance of 5 uF. We describe circuit topologies, operation principles and simulation results for our proposed circuit. In addition, we show the line regulation for input voltage variation from 85V to 130V. The output voltage ripple is 2V and the LED current ripple is 65 mA which is less than 20% of the typical current of 350 mA. We are now making the proposed circuit on a universal board in order to measure the experimental characteristics.

Keywords: LED driver, electrolytic, capacitor-less, AC-DC converter, buck-boost converter, current ripple canceller

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Authors: Kittipong Tripetch, Nobuhiko Nakano

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Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at  ±0.9 V.

Keywords: floating active resistor, complementary common gate, complementary regulated cascode, current mirror

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Authors: Chen Zheng, Lin Zhou, Bao Xie, Xiao Du, Nianbin Shao

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Power generated by large-scale photovoltaic plants (LSPVPs) is usually transmitted to the grid through several transformers and long distance overhead lines. Impedance of transformers and transmission lines results in complex interactions between the plant and the grid and among different inverters. In accordance with the topological structure of LSPV in reality, an equivalent model containing different inverters was built and then interactions between the plant and the grid and among different inverters were studied. Based on the vector composition principle of voltage at the point of common coupling (PCC), the mathematic function of PCC voltage in regard to the total power and grid impedance was deduced, from which the uttermost total power to guarantee the system stable is obtained. Taking the influence of different inverters numbers and the length of transmission lines to the system stability into account, the stability criterion of LSPV containing different inverters was derived. The result of simulation validated the theory analysis in the paper.

Keywords: LSPVPs, stability analysis, grid impedance, different types of inverter, PCC voltage

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Authors: W. Benstaali, A. Belasri

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In this work we study a planar lamp filled with neon-xenon gas. We use a one-dimensional particle in a cell with Monte Carlo simulation (PIC-MCC) to investigate the effect xenon concentration on the energy deposited on excitation, ionization and ions. A Xe-Ne discharge is studied for a gas pressure of 400 torr. The results show an efficient Xe20-Ne mixture with an applied voltage of 1.2KV; the xenon excitation energy represents 65% form total energy dissipated in the discharge. We have also studied electrical properties and the energy balance a discharge for Xe50-Ne which needs a voltage of 2kv; the xenon energy is than more important.

Keywords: dielectric barrier discharge, efficiency, excitation, lamps

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Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

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According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling

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Authors: Venkata Reddy Kota

Abstract:

These days, the industrial trend is moving away from heavy and bulky passive components to power converter systems that use more and more semiconductor elements. Also, it is difficult to connect the traditional converters to the high and medium voltage. For these reasons, a new family of multilevel inverters has appeared as a solution for working with higher voltage levels. Different modulation topologies like Sinusoidal Pulse Width Modulation (SPWM), Selective Harmonic Elimination Pulse Width Modulation (SHE-PWM) are available for multilevel inverters. In this work, different hybrid modulation techniques which are combination of fundamental frequency modulation and multilevel sinusoidal-modulation are compared. The main characteristic of these modulations are reduction of switching losses with good harmonic performance and balanced power loss dissipation among the device. The proposed hybrid modulation schemes are developed and simulated in Matlab/Simulink for cascaded H-bridge inverter. The results validate the applicability of the proposed schemes for cascaded multilevel inverter.

Keywords: hybrid PWM techniques, cascaded multilevel inverters, switching loss minimization

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Authors: Rajesh Kumar, Puneet Aggarwal

Abstract:

In context of understanding problems faced by undergraduate students while carrying out laboratory experiments dealing with high voltages, it was found that most of the students are hesitant to work directly on machine. The reason is that error in the circuitry might lead to deterioration of machine and laboratory instruments. So, it has become inevitable to include modern pedagogic techniques for undergraduate students, which would help them to first carry out experiment in virtual system and then to work on live circuit. Further advantages include that students can try out their intuitive ideas and perform in virtual environment, hence leading to new research and innovations. In this paper, virtual environment used is of MATLAB/Simulink for three-phase induction machines. The performance analysis of three-phase induction machine is carried out using virtual environment which includes Direct Current (DC) Test, No-Load Test, and Block Rotor Test along with speed torque characteristics for different rotor resistances and input voltage, respectively. Further, this paper carries out computer aided teaching of basic Voltage Source Inverter (VSI) drive circuitry. Hence, this paper gave undergraduates a clearer view of experiments performed on virtual machine (No-Load test, Block Rotor test and DC test, respectively). After successful implementation of basic tests, VSI circuitry is implemented, and related harmonic distortion (THD) and Fast Fourier Transform (FFT) of current and voltage waveform are studied.

Keywords: block rotor test, DC test, no load test, virtual environment, voltage source inverter

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