Search results for: thin film metallic glasses

Authors: Ping-Ping Zhang, Hui-Zhang, Xu-Hui Sun

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Highly-uniform In2O3/CuO bilayer and multilayer porous thin films were successfully fabricated using self-assembled soft template and simple sputtering deposition technique. The sensor based on the In2O3/CuO bilayer porous thin film shows obviously improved sensing performance to ethanol at the lower working temperature, compared to single layer counterpart sensors. The response of In2O3/CuO bilayer sensors exhibits nearly 3 and 5 times higher than those of the single layer In2O3 and CuO porous film sensors over the same ethanol concentration, respectively. The sensing mechanism based on p-n hetero-junction, which contributed to the enhanced sensing performance was also experimentally confirmed by a control experiment which the SiO2 insulation layer was inserted between the In2O3 and CuO layers to break the p-n junction. In addition, the sensing performance can be further enhanced by increasing the number of In2O3/CuO junction layers. The facile process can be easily extended to the fabrication of other semiconductor oxide gas sensors for practical sensing applications.

Keywords: gas sensor, multilayer porous thin films, In2O3/CuO, p-n junction

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Authors: Alok Tiwari, Ming Show Wong

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Lanthanum (La) doped Barium Tin Oxide (BaSnO₃) film is an excellent alternative for expensive Transparent Conducting Oxides (TCOs) film such as Indium Tin Oxide (ITO). However single crystal film of La-doped BaSnO₃ has been reported with a good amount of conductivity and transparency but in order to improve its reachability, it is important to grow doped BaSO₃ films on an inexpensive substrate. La-doped BaSnO₃ thin films have been grown on quartz substrate by Radio Frequency (RF) sputtering at a different substrate temperature (from 200⁰C to 750⁰C). The thickness of the film measured was varying from 360nm to 380nm with varying substrate temperature. Structure, optical and electrical properties have been studied. The carrier concentration is seen to be decreasing as we enhance the substrate temperature while mobility found to be increased up to 9.3 cm²/V-S. At low substrate temperature resistivity found was lower (< 3x10⁻³ ohm-cm) while sudden enhancement was seen as substrate temperature raises and the trend continues further with increasing substrate temperature. Optical transmittance is getting better with higher substrate temperature from 70% at 200⁰C to > 80% at 750⁰C. Overall, understanding of changes in microstructure, electrical and optical properties of a thin film by varying substrate temperature has been reported successfully.

Keywords: conductivity, perovskite, mobility, TCO film

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Authors: Ghazala Anjum, Farooq Hussain Bhat, Ravi Kumar

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Multiferroic materials are vital for new application and memory devices, not only because of the presence of multiple types of domains but also as a result of cross correlation between coexisting forms of magnetic and electrical orders. In spite of wide studies done on multiferroic bulk ceramic materials their realization in thin film form is yet limited due to some crucial problems. During the last few years, special attention has been devoted to synthesis of thin films like of BiFeO₃. As they allow direct integration of the material into the device technology. Therefore owing to the process of exploration of new multiferroic thin films, preparation, and characterization of La₀.₈Bi₀.₂Fe₀.₇Mn₀.₃O₃ (LBFMO3) thin film on LaAlO₃ (LAO) substrate with LaNiO₃ (LNO) being the buffer layer has been done. The fact that all the electrical and magnetic properties are closely related to the electronic structure makes it inevitable to study the electronic structure of system under study. Without the knowledge of this, one may never be sure about the mechanism responsible for different properties exhibited by the thin film. Literature review reveals that studies on change in atomic and the hybridization state in multiferroic samples are still insufficient except few. The technique of x-ray absorption (XAS) has made great strides towards the goal of providing such information. It turns out to be a unique signature to a given material. In this milieu, it is time honoured to have the electronic structure study of the elements present in the LBFMO₃ multiferroic thin film on LAO substrate with buffer layer of LNO synthesized by RF sputtering technique. We report the electronic structure studies of well characterized LBFMO3 multiferroic thin film on LAO substrate with LNO as buffer layer using near-edge X-ray absorption fine structure (NEXAFS). Present exploration has been performed to find out the valence state and crystal field symmetry of ions present in the system. NEXAFS data of O K- edge spectra reveals a slight shift in peak position along with growth in intensities of low energy feature. Studies of Mn L₃,₂- edge spectra indicates the presence of Mn³⁺/Mn⁴⁺ network apart from very small contribution from Mn²⁺ ions in the system that substantiates the magnetic properties exhibited by the thin film. Fe L₃,₂- edge spectra along with spectra of reference compound reveals that Fe ions are present in +3 state. Electronic structure and valence state are found to be in accordance with the magnetic properties exhibited by LBFMO/LNO/LAO thin film.

Keywords: magnetic, multiferroic, NEXAFS, x-ray absorption fine structure, XMCD, x-ray magnetic circular dichroism

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Authors: Swapna Koneru, Srinivasa Rao Allam, Vijaya Prakash Gaddem

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The different concentrations of neodymium-doped (Nd-doped) oxy fluoroborate (OFB) glasses were prepared by melt quenching method and characterized through optical absorption, emission and decay curve measurements to understand the lasing potentialities of these glasses. Optical absorption spectra were recorded and have been analyzed using Judd–Ofelt theory. The dipole strengths are parameterized in terms of three phenomenological Judd–Ofelt intensity parameters Ωλ (λ=2, 4 and 6) to elucidate the glassy matrix around Nd3+ ion as well as to determine the 4F3/2 metastable state radiative properties such as the transition probability (AR), radiative lifetime (τR), branching ratios (βR) and integrated absorption cross-section (σa) have been measured for most of the fluorescent levels of Nd3+. The emission spectra recorded for these glasses exhibit two peaks at 1085 and 1328 nm corresponding to 4F3/2 to 4I11/2 and 4I13/2 transitions have been obtained for all the glasses upon 808 nm diode laser excitation in the near infrared region. The emission intensity of the 4F3/2 to 4I11/2 transition increases with increase of Nd3+ concentration up to 1 mol% and then concentration quenching is observed for 2.0 mol% of Nd3+ concentration. The lifetimes for the 4F3/2 level are found to decrease with increase in Nd2O3 concentration in the glasses due to the concentration quenching. The decay curves of all these glasses show single exponential behavior. The spectroscopy of Nd3+ in these glasses is well understood and laser properties can be accurately determined from measured spectroscopic properties. The results obtained are compared with reports on similar glasses. The results indicate that the present glasses could be useful for 1.08 µm laser applications.

Keywords: glasses, luminescence, optical properties, photoluminescence spectroscopy

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Authors: Melissa Chavez Portillo, Mauricio Pacio Castillo, Hector Juarez Santiesteban, Oscar Portillo Moreno

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Chemical bath deposited PbS:Bi3+ as an electron collection layer is introduced between the silicon wafer and the Ag electrode the performance of the PbS heterojunction thin film solar thin film solar cells with 1 cm2 active area. We employed Bi-doping to transform it into an n-type semiconductor. The experimental results reveal that the cell response parameters depend critically on the deposition procedures in terms of bath temperature, deposition time. The device achieves an open-circuit voltage of 0.4 V. The simple and low-cost deposition method of PbS:Bi3+ films is promising for the fabrication.

Keywords: Bi doping, PbS, thin films, solar cell

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Authors: Vedant Subhash

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This paper discusses the physics of the detection of thermal neutrons using thin-film coated semiconductor detectors. The thermal neutron detection efficiency as a function of film thickness is calculated for the front and back irradiation detector devices coated with ¹⁰B, ⁶LiF, and pure Li thin films. The detection efficiency for back irradiation devices is 4.15% that is slightly higher than that for front irradiation detectors, 4.0% for ¹⁰B films of thickness 2.4μm. The theoretically calculated thermal neutron detection efficiency using ¹⁰B film thickness of 1.1 μm for the back irradiation device is 3.0367%, which has an offset of 0.0367% from the experimental value of 3.0%. The detection efficiency values are compared and proved consistent with the given calculations.

Keywords: detection efficiency, neutron detection, semiconductor detectors, thermal neutrons

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Authors: Temesgen Geremew

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ZnO is currently receiving a lot of attention in the semiconductor industry due to its unique characteristics. ZnO is widely used in solar cells, heat-reflecting glasses, optoelectronic bias, and detectors. In this composition, we provide an overview of the ZnO thin flicks' packages, methods of characterization, and implicit operations. They consist of Transmission spectroscopy, Raman spectroscopy, Field emigration surveying electron microscopy, and X-ray diffraction. This review content also demonstrates how ZnO thin flicks function in electrical components for piezoelectric bias, optoelectronics, detectors, and renewable energy sources. Zinc oxide (ZnO) thin films offer a captivating tapestry of possibilities due to their unique blend of electrical, optical, and mechanical properties. This review delves into the realm of their potential applications and future prospects, highlighting the pivotal contributions of research endeavors aimed at tailoring their functionalities.

Keywords: Zinc oxide, raman spectroscopy, thin films, piezoelectric devices

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Authors: Uchenna Sydney Mbamara, Bolu Olofinjana, Ezekiel Oladele B. Ajayi

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Elaborate surface metrology of undoped ZnO thin films, deposited by organometallic chemical vapour deposition (OMCVD) technique at different precursor flow rates, was carried out. Dicarbomethyl-zinc precursor was used. The films were deposited on AISI304L steel and soda-lime glass substrates. Ultraviolet-visible-near-infrared (UV-Vis-NIR) spectroscopy showed that all the thin films were over 80% transparent, with an average bandgap of 3.39 eV, X-ray diffraction (XRD) results showed that the thin films were crystalline with a hexagonal structure, while Rutherford backscattering spectroscopy (RBS) results identified the elements present in each thin film as zinc and oxygen in the ratio of 1:1. Microscope and contactless profilometer results gave images with characteristic colours. The profilometer also gave the surface roughness data in both 2D and 3D. The asperity distribution of the thin film surfaces was Gaussian, while the average fractal dimension Da was in the range of 2.5 ≤ Da. The metrology proved the surfaces good for ‘touch electronics’ and coating mechanical parts for low friction.

Keywords: undoped ZnO, precursor flow rate, OMCVD, thin films, surface texture, tribology

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Authors: Jyoti Jaiswal, Satyendra Mourya, Gaurav Malik, Ramesh Chandra

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In the present work, we have fabricated and studied a resistive H₂ gas sensor based on Pd-Pt decorated room temperature sputter grown nanocrystalline porous titanium dioxide (p-TiO₂) thin film on porous silicon (p-Si) substrate for fast H₂ detection. The gas sensing performance of Pd-Pt/p-TiO₂/p-Si sensing electrode towards H₂ gas under low (10-500 ppm) detection limit and operating temperature regime (25-200 °C) was discussed. The sensor is highly sensitive even at room temperature, with response (Ra/Rg) reaching ~102 for 500 ppm H₂ in dry air and its capability of sensing H₂ concentrations as low as ~10 ppm was demonstrated. At elevated temperature of 200 ℃, the response reached more than ~103 for 500 ppm H₂. Overall the fabricated resistive gas sensor exhibited high selectivity, good sensing response, and fast response/recovery time with good stability towards H₂.

Keywords: sputtering, porous silicon (p-Si), TiO₂ thin film, hydrogen gas sensor

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Authors: Debarun Dhar Purkayastha, Talinungsang

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SnO₂-TiO₂ nanocomposite thin films were prepared by the sol-gel method on borosilicate glass substrate. The films were annealed at a temperature of 300ᵒC, 400ᵒC, and 500ᵒC respectively for 2h in the air. The films obtained were further modified with stearic acid in order to decrease the surface energy. The X-ray diffraction patterns for the SnO₂-TiO₂ thin films after annealing at different temperatures can be indexed to the mixture of TiO₂ (rutile and anatase) and SnO₂ (tetragonal) phases. The average crystallite size calculated from Scherrer’s formula is found to be 6 nm. The SnO₂-TiO₂ thin films were hydrophilic which on modification with stearic acid exhibit superhydrophobic behavior. The increase in hydrophobicity of SnO₂ film with stearic acid modification is attributed to the change in surface energy of the film. The films exhibit superhydrophilic behavior under UV irradiation for 1h. Thus, it is observed that stearic acid modified surfaces are superhydrophobic but convert into superhydrophilic on being subjected to UV irradiation. SnO₂-TiO₂ thin films have potential for self-cleaning applications because of photoinduced hydrophilicity under UV irradiation.

Keywords: nanocomposite, self-cleaning, superhydrophobic, surface energy

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Authors: Sanusi Abdullahi, Musa Momoh, Abubakar Umar Moreh, Aminu Muhammad Bayawa, Olubunmi Popoola

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Kesterite-type Cu₂ZnSnS₄ (CZTS) thin films were deposited on corning glass from a single quaternary target. In this study, we investigated the growth mechanism and the influence of thin film thickness on the structural and compositional properties of CZTS films. All the four samples (as-deposited inclusive) show peaks corresponding to kesterite-type structure. The diffraction peaks of (112) are sharp and the small characteristics peaks of the kesterite structure such as (220)/ (204) and (312)/ (116) are also clearly observed in X-ray diffraction pattern. These results indicate that the quaternary CZTS would be a potential candidate for solar cell applications.

Keywords: RF sputtering, Cu2ZnSnS4 thin film, annealing, growth mechanism, annealing, growth mechanism, renewable energy

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Authors: Prashant G. Metri

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A numerical model is developed to study nano liquid film flow over an unsteady stretching sheet in the presence of hydromagnetic have been investigated. Similarity transformations are used to convert unsteady boundary layer equations to a system of non-linear ordinary differential equations. The resulting non-linear ordinary differential equations are solved numerically using Runge-Kutta-Fehlberg and Newton-Raphson schemes. A relationship between film thickness β and the unsteadiness parameter S is found, the effect of unsteadiness parameter S, and the hydromagnetic parameter S, on the velocity and temperature distributions are presented. The present analysis shows that the combined effect of magnetic field and viscous dissipation has a significant influence in controlling the dynamics of the considered problem. Comparison with known results for certain particular cases is in excellent agreement.

Keywords: boundary layer flow, nanoliquid, thin film, unsteady stretching sheet

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Authors: Y. M. Aiyesimi, G. T. Okedayo, O. W. Lawal

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The analysis has been carried out to study unsteady MHD thin film flow of a third grade fluid down an inclined plane with heat transfer when the slippage between the surface of plane and the lower surface of the fluid is valid. The governing nonlinear partial differential equations involved are reduced to linear partial differential equations using regular perturbation method. The resulting equations were solved analytically using method of separation of variable and eigenfunctions expansion. The solutions obtained were examined and discussed graphically. It is interesting to find that the variation of the velocity and temperature profile with the slip and magnetic field parameter depends on time.

Keywords: non-Newtonian fluid, MHD flow, thin film flow, third grade fluid, slip boundary condition, heat transfer, separation of variable, eigenfunction expansion

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Authors: J. O. Ajayi, S. S. Oluyamo, D. B. Agunbiade

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In this work, tin oxide thin films (SnO2) were prepared using the spin coating technique. The effects of precursor concentration on the thin film properties were investigated. Tin oxide was synthesized from anhydrous Tin (II) Chloride (SnCl2) dispersed in Methanol and Acetic acid. The metallic oxide (SnO2) films deposited were characterized using the UV Spectrophotometer and the Scanning Electron Microscope (SEM). From the absorption spectra, absorption increases with decrease in precursor concentration. Absorbance in the VIS region is lower than 0 % at higher concentration. The optical transmission spectrum shows that transmission increases as the concentration of precursor decreases and the maximum transmission in visible region is about 90% for films prepared with 0.2 M. Also, there is increase in the reflectance of thin films as concentration of precursor increases. The films have high transparency (more than 85%) and low reflectance (less than 40%) in the VIS region. Investigation showed that the direct band gap value increased from 3.79eV, to 3.82eV as the precursor concentration decreased from 0.6 M to 0.2 M. Average direct bandgap energy for all the tin oxide films was estimated to be 3.80eV. The effect of precursor concentration was directly observed in crystal outgrowth and surface particle densification. They were found to increase proportionately with higher concentration.

Keywords: anhydrous TIN (II) chloride, densification, NIS- VIS region, spin coating technique

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Authors: Hanan. Al Chaghouri, Mohammad Azad Malik, P. John Thomas, Paul O’Brien

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The process of assembling metal nanoparticles at the interface of two liquids has received a great interest over the past few years due to a wide range of important applications and their unusual properties compared to bulk materials. We present a low cost, simple and cheap synthesis of metal nanoparticles, core/shell structures and semiconductors followed by assembly of these particles between immiscible liquids. The aim of this talk is divided to three parts: firstly, to describe the achievement of a closed loop recycling for producing cadmium sulphide as powders and/or nanostructured thin films for solar cells or other optoelectronic devices applications by using a different chain length of commercially available secondary amines of dithiocarbamato complexes. The approach can be extended to other metal sulphides such as those of Zn, Pb, Cu, or Fe and many transition metals and oxides. Secondly, to synthesis significantly cheaper magnetic particles suited for the mass market. Ni/NiO nanoparticles with ferromagnetic properties at room temperature were among the smallest and strongest magnets (5 nm) were made in solution. The applications of this work can be applied to produce viable storage devices and the other possibility is to disperse these nanocrystals in solution and use it to make ferro-fluids which have a number of mature applications. The third part is about preparing and assembling of submicron silver, cobalt and nickel particles by using polyol methods and liquid/liquid interface, respectively. Noble metal like gold, copper and silver are suitable for plasmonic thin film solar cells because of their low resistivity and strong interactions with visible light waves. Silver is the best choice for solar cell application since it has low absorption losses and high radiative efficiency compared to gold and copper. Assembled cobalt and nickel as films are promising for spintronic, magnetic and magneto-electronic and biomedics.

Keywords: assembling nanoparticles, liquid/liquid interface, thin film, core/shell, solar cells, recording media

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Authors: Ching-Hua Li, Sheng-Hui Chen

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Sputtering is a popular technique with many advantages for thin film deposition. To fabricate a hydrogenated silicon thin film using sputtering process for solar cell applications, the ion bombardment during sputtering will generate microstructures (voids and columnar structures) to form silicon dihydride bodings as defects. The properties of heterojunction silicon solar cells were studied by using boron grains and silicon-boron targets. Finally, an 11.7% efficiency of solar cell was achieved by using all sputtering process.

Keywords: solar cell, sputtering process, pvd, alloy target

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Authors: M. Lehtihet, S. Rosado, C. Pradère, J. Leng

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Poly(3,4-ethylene dioxythiophene) polystyrene sulfonate (PEDOT: PSS), is a polymer mixture well-known for its semiconducting properties and is widely used in the coating industry for its visible transparency and high electronic conductivity (up to 4600 S/cm) as a transparent non-metallic electrode and in organic light-emitting diodes (OLED). It also possesses strong absorption properties in the Near Infra-Red (NIR) range (λ ranging between 900 nm to 2.5 µm). In the present work, we take advantage of this absorption to explore its potential use as a transparent light-to-heat converter. PEDOT: PSS aqueous dispersions are deposited onto a glass substrate using a blade-coating technique in order to produce uniform coatings with controlled thicknesses ranging in ≈ 400 nm to 2 µm. Blade-coating technique allows us good control of the deposit thickness and uniformity by the tuning of several experimental conditions (blade velocity, evaporation rate, temperature, etc…). This liquid coating technique is a well-known, non-expensive technique to realize thin film coatings on various substrates. For coatings on glass substrates destined to solar insulation applications, the ideal coating would be made of a material able to transmit all the visible range while reflecting the NIR range perfectly, but materials possessing similar properties still have unsatisfactory opacity in the visible too (for example, titanium dioxide nanoparticles). NIR absorbing thin films is a more realistic alternative for such an application. Under solar illumination, PEDOT: PSS thin films heat up due to absorption of NIR light and thus act as planar heaters while maintaining good transparency in the visible range. Whereas they screen some NIR radiation, they also generate heat which is then conducted into the substrate that re-emits this energy by thermal emission in every direction. In order to quantify the heating power of these coatings, a sample (coating on glass) is placed in a black enclosure and illuminated with a solar simulator, a lamp emitting a calibrated radiation very similar to the solar spectrum. The temperature of the rear face of the substrate is measured in real-time using thermocouples and a black-painted Peltier sensor measures the total entering flux (sum of transmitted and re-emitted fluxes). The heating power density of the thin films is estimated from a model of the thin film/glass substrate describing the system, and we estimate the Solar Heat Gain Coefficient (SHGC) to quantify the light-to-heat conversion efficiency of such systems. Eventually, the effect of additives such as dimethyl sulfoxide (DMSO) or optical scatterers (particles) on the performances are also studied, as the first one can alter the IR absorption properties of PEDOT: PSS drastically and the second one can increase the apparent optical path of light within the thin film material.

Keywords: PEDOT: PSS, blade-coating, heat, thin-film, Solar spectrum

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Authors: Rwei-Ching Chang, Bo-Yu Su

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Adhesion of copper thin films deposited on polyethylene terephthAdhesion of copper thin films deposited on polyethylene terephthalate substrate by direct current sputtering with different sputtering parameters is discussed in this work. The effects of plasma treatment with 0, 5, and 10 minutes on the thin film properties are investigated first. Various argon flow rates at 40, 50, 60 standard cubic centimeters per minute (sccm), deposition power at 30, 40, 50 W, and film thickness at 100, 200, 300 nm are also discussed. The 3-dimensional surface profilometer, micro scratch machine, and optical microscope are used to characterize the thin film properties. The results show that the increase of the plasma treatment time on the polyethylene terephthalate surface affects the roughness and critical load of the films. The critical load increases as the plasma treatment time increases. When the plasma treatment time was adjusted from 5 minutes to 10 minutes, the adhesion increased from 8.20 mN to 13.67 mN. When the argon flow rate is decreased from 60 sccm to 40 sccm, the adhesion increases from 8.27 mN to 13.67 mN. The adhesion is also increased by the condition of higher power, where the adhesion increased from 13.67 mN to 25.07 mN as the power increases from 30 W to 50 W. The adhesion of the film increases from 13.67 mN to 21.41mN as the film thickness increases from 100 nm to 300 nm. Comparing all the deposition parameters, it indicates the change of the power and thickness has much improvement on the film adhesion.alate substrate by direct current sputtering with different sputtering parameters is discussed in this work. The effects of plasma treatment with 0, 5, and 10 minutes on the thin film properties are investigated first. Various argon flow rates at 40, 50, 60 standard cubic centimeters per minute (sccm), deposition power at 30, 40, 50 W, and film thickness at 100, 200, 300 nm are also discussed. The 3-dimensional surface profilometer, micro scratch machine, and optical microscope are used to characterize the thin film properties. The results show that the increase of the plasma treatment time on the polyethylene terephthalate surface affects the roughness and critical load of the films. The critical load increases as the plasma treatment time increases. When the plasma treatment time was adjusted from 5 minutes to 10 minutes, the adhesion increased from 8.20 mN to 13.67 mN. When the argon flow rate is decreased from 60 sccm to 40 sccm, the adhesion increases from 8.27 mN to 13.67 mN. The adhesion is also increased by the condition of higher power, where the adhesion increased from 13.67 mN to 25.07 mN as the power increases from 30 W to 50 W. The adhesion of the film increases from 13.67 mN to 21.41mN as the film thickness increases from 100 nm to 300 nm. Comparing all the deposition parameters, it indicates the change of the power and thickness has much improvement on the film adhesion.

Keywords: flexible substrate, sputtering, adhesion, copper thin film

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Authors: M. Monisha, Sudha D. Kamath

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We investigate the optical and photoluminescence properties from Dy³+ singly doped and Dy³+ co-doped with Ce³+alumino borosilicate glasses prepared using high temperature melt-quenching technique. The glass composition formula is 25SiO₂-(40-x-y)B2O₃-10Al₂O₃-15NaF-10ZnO-xDy₂O₃ yCe₂O₃ where, x = 0.5 mol% and y = 0, 0.1, and 0.5 mol%. The XRD study reveals the amorphous nature of both singly doped and co-doped glasses. Absorption study on Dy3+ singly doped glass shows nearly twelve absorption peaks arising from the ground level of Dy³+ ions (⁶H₁₅/₂) to various upper levels, and for Dy³+/Ce³+ co-doped glasses, few of the transitions in the visible region are suppressed. The absorption band edge is shifted towards the higher wavelength region on increasing Ce3+concentration. The decrease in indirect energy bandgap and increase in Urbach energy of the prepared glasses is observed due to codoping with Ce3+ ions. The photoluminescence studies on singly doped glass under 350 nm excitation showed three peaks at the blue (482 nm), yellow (575 nm), and red (663 nm) region. For codoped glasses, the emission peak at 403 nm is raised due to the 4d to 5f transition of Ce3+ ions. Lifetime values (ms) of co-doped glass is found to be higher than singly doped glass. Under 350 nm excitation, CIE coordinates of the co-doped glasses moved towards the bright white light region. The correlated color temperature (CCT) values were obtained in the range 4500 – 4700 K. Thus, the prepared glasses can be used for photonics device applications.

Keywords: absorption spectra, borosilicate glasses, Ce³+, Dy³+, photoluminescence

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Authors: Eden G. Mariquit, Winarto Kurniawan, Masahiro Miyauchi, Hirofumi Hinode

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This research studied the effect of adding surfactant to the titanium dioxide (TiO2) sol-gel solution that was used to immobilize TiO2 on glass substrates by dip coating technique using TiO2 sol-gel solution mixed with different types of surfactants. After dipping into the TiO2 sol, the films were calcined and produced pure anatase crystal phase. The thickness of the thin film was varied by repeating the dip and calcine cycle. The prepared films were characterized using FE-SEM, TG-DTA, and XRD, and its photocatalytic performances were tested on degradation of an organic dye, methylene blue. Aside from its phocatalytic performance, the photo-induced hydrophilicity of thin TiO2 films surface was also studied. Characterization results showed that the addition of surfactant gave rise to characteristic patterns on the surface of the TiO2 thin film which also affects the photocatalytic activity. The addition of CTAB to the TiO2 dipping solution had a negative effect because the calcination temperature was not high enough to burn all the surfactants off. As for the surface wettability, the addition of surfactant also affected the induced surface hydrophilicity of the TiO2 films when irradiated under UV light.

Keywords: photocatalysis, surface hydrophilicity, TiO2 thin films, surfactant

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Authors: Nipa Debnath, Harinarayan Das, Takahiko Kawaguchi, Naonori Sakamoto, Kazuo Shinozaki, Hisao Suzuki, Naoki Wakiya

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Nowadays spinel ferrite magnetic thin films have drawn considerable attention due to their interesting magnetic and electrical properties with enhanced chemical and thermal stability. Spinel ferrite magnetic films can be implemented in magnetic data storage, sensors, and spin filters or microwave devices. It is well established that the structural, magnetic and transport properties of the magnetic thin films are dependent on microstructure. Spinodal decomposition (SD) is a phase separation process, whereby a material system is spontaneously separated into two phases with distinct compositions. The periodic microstructure is the characteristic feature of SD. Thus, SD can be exploited to control the microstructure at the nanoscale level. In bulk spinel ferrites having general formula, MₓFe₃₋ₓ O₄ (M= Co, Mn, Ni, Zn), phase separation via SD has been reported only for cobalt ferrite (CFO); however, long time post-annealing is required to occur the spinodal decomposition. We have found that SD occurs in CoF thin film without using any post-deposition annealing process if we apply magnetic field during thin film growth. Dynamic Aurora pulsed laser deposition (PLD) is a specially designed PLD system through which in-situ magnetic field (up to 2000 G) can be applied during thin film growth. The in-situ magnetic field suppresses the recombination of ions in the plume. In addition, the peak’s intensity of the ions in the spectra of the plume also increases when magnetic field is applied to the plume. As a result, ions with high kinetic energy strike into the substrate. Thus, ion-impingement occurred under magnetic field during thin film growth. The driving force of SD is the ion-impingement towards the substrates that is induced by in-situ magnetic field. In this study, we report about the occurrence of phase separation through SD and evolution of microstructure after phase separation in spinel ferrite thin films. The surface morphology of the phase separated films show checkerboard like domain structure. The cross-sectional microstructure of the phase separated films reveal columnar type phase separation. Herein, the decomposition wave propagates in lateral direction which has been confirmed from the lateral composition modulations in spinodally decomposed films. Large magnetic anisotropy has been found in spinodally decomposed nickel ferrite (NFO) thin films. This approach approves that magnetic field is also an important thermodynamic parameter to induce phase separation by the enhancement of up-hill diffusion in thin films. This thin film deposition technique could be a more efficient alternative for the fabrication of self-organized phase separated thin films and employed in controlling of the microstructure at nanoscale level.

Keywords: Dynamic Aurora PLD, magnetic anisotropy, spinodal decomposition, spinel ferrite thin film

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Authors: Wu Peiqin

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Flexible thermoelectric devices are light and flexible, which can be in close contact with any shape of heat source surfaces to minimize heat loss and achieve efficient energy conversion. Among the wide application fields, energy harvesting via flexible thermoelectric generators can adapt to a variety of curved heat sources (such as human body, circular tubes, and surfaces of different shapes) and can drive low-power electronic devices, exhibiting one of the most promising technologies in self-powered systems. The heat flux along the cross-section of the flexible thin-film generator is limited by the thickness, so the temperature difference decreases during the generation process, and the output power is low. At present, most of the heat flow directions of the thin film thermoelectric generator are along the thin-film plane; however, this method is not suitable for attaching to the human body surface to generate electricity. In order to make the film generator more suitable for thermoelectric generation, it is necessary to apply a flexible heatsink on the air sides with the film to maintain the temperature difference. In this paper, Bismuth telluride thermoelectric paste was deposited on polyimide flexible substrate by a screen printing method, and the flexible thermoelectric film was formed after drying. There are ten pairs of thermoelectric legs. The size of the thermoelectric leg is 20 x 2 x 0.1 mm, and adjacent thermoelectric legs are spaced 2 mm apart. A phase change material-based flexible heatsink was designed and fabricated. The flexible heatsink consists of n-octadecane, polystyrene, and expanded graphite. N-octadecane was used as the thermal storage material, polystyrene as the supporting material, and expanded graphite as the thermally conductive additive. The thickness of the flexible phase change material-based heatsink is 2mm. A thermoelectric performance testing platform was built, and its output performance was tested. The results show that the system can generate an open-circuit output voltage of 3.89 mV at a temperature difference of 10K, which is higher than the generator without a heatsink. Therefore, the flexible heatsink can increase the temperature difference between the two ends of the film and improve the output performance of the flexible film generator. This result promotes the application of the film thermoelectric generator in collecting human heat for power generation.

Keywords: flexible thermoelectric generator, screen printing, PCM, flexible heatsink

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Authors: A. S. Obaid, K. H. T. Hassan, A. M. Asij, B. M. Salih, M. Bououdina

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Cadmium Oxide (CdO) thin films have been prepared by vacuum evaporation method on Si (111) substrate at room temperature using CdCl2 as a source of Cd. Detailed structural properties of the films are presented using XRD and SEM. The films was pure polycrystalline CdO phase with high crystallinity. The lattice constant average crystallite size of the nanocrystalline CdO thin films were calculated. SEM image confirms the formation nanostructure. Energy dispersive X-ray analysis spectra of CdO thin films shows the presence of Cd and O peaks only, no additional peaks attributed to impurities or contamination are observed.

Keywords: nanostructured CdO, solid-vapor deposition, quantum size effect, cadmium oxide

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Authors: Alfonso Sepulveda, Brecht Put, Nouha Labyedh, Philippe M. Vereecken

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High energy and power density are the main requirements of today’s high demanding applications in consumer electronics. Lithium ion batteries (LIB) have the highest energy density of all known systems and are thus the best choice for rechargeable micro-batteries. Liquid electrolyte LIBs present limitations in safety, size and design, thus thin film all-solid state batteries are predominantly considered to overcome these restrictions in small devices. Although planar all-solid state thin film LIBs are at present commercially available they have low capacity (<1mAh/cm2) which limits their application scenario. By using micro-or nanostructured surfaces (i.e. 3D batteries) and appropriate conformal coating technology (i.e. electrochemical deposition, ALD) the capacity can be increased while still keeping a high rate performance. The main challenges in the introduction of solid-state LIBs are low ionic conductance and limited cycle life time due to mechanical stress and shearing interfaces. Novel materials and innovative nanostructures have to be explored in order to overcome these limitations. Thin film 3D compatible materials need to provide with the necessary requirements for functional and viable thin-film stacks. Thin film electrodes offer shorter Li-diffusion paths and high gravimetric and volumetric energy densities which allow them to be used at ultra-fast charging rates while keeping their complete capacities. Thin film electrolytes with intrinsically high ion conductivity (~10-3 S.cm) do exist, but are not electrochemically stable. On the other hand, electronically insulating electrolytes with a large electrochemical window and good chemical stability are known, but typically have intrinsically low ionic conductivities (<10-6 S cm). In addition, there is the need for conformal deposition techniques which can offer pinhole-free coverage over large surface areas with large aspect ratio features for electrode, electrolyte and buffer layers. To tackle the scaling of electrodes and the conformal deposition requirements on future 3D batteries we study LiMn2O4 (LMO) and Li4Ti5O12 (LTO). These materials are among the most interesting electrode candidates for thin film batteries offering low cost, low toxicity, high voltage and high capacity. LMO and LTO are considered 3D compatible materials since they can be prepared through conformal deposition techniques. Here, we show the scaling effects on rate performance and cycle stability of thin film cathode layers of LMO created by RF-sputtering. Planar LMO thin films below 100 nm have been electrochemically characterized. The thinnest films show the highest volumetric capacity and the best cycling stability. The increased stability of the films below 50 nm allows cycling in both the 4 and 3V potential region, resulting in a high volumetric capacity of 1.2Ah/cm3. Also, the creation of LTO anode layers through a post-lithiation process of TiO2 is demonstrated here. Planar LTO thin films below 100 nm have been electrochemically characterized. A 70 nm film retains 85% of its original capacity after 100 (dis)charging cycles at 10C. These layers can be implemented into a high aspect ratio structures. IMEC develops high aspect Si pillars arrays which is the base for the advance of 3D thin film all-solid state batteries of future technologies.

Keywords: Li-ion rechargeable batteries, thin film, nanostructures, rate performance, 3D batteries, all-solid state

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Authors: Najme Lari, Shahrokh Ahangarani, Ali Shanaghi

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Sol-gel technology is a promising manufacturing method to produce anti reflective silica thin films for solar energy applications. So to improve the properties of the films, controlling parameter of the sol - gel method is very important. In this study, soaking treatment effect on optical properties of silica anti reflective thin films was investigated. UV-Visible Spectroscopy, Fourier-Transformed Infrared Spectrophotometer and Field Emission Scanning Electron Microscopy was used for the characterization of silica thin films. Results showed that all nanoporous silica layers cause to considerable reduction of light reflections compared with uncoated glasses. With single layer deposition, the amount of reduction depends on the dipping time of coating and has an optimal time. Also, it was found that solar transmittance increased from 91.5% for the bare slide up to 97.5% for the best made sample corresponding to two deposition cycles.

Keywords: sol–gel, silica thin films, anti reflective coatings, optical properties, soaking treatment

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Authors: Rawan Aljabbari, Thamer Alomayri, Faisal G. Al-Maqate, Abeer Al Suwat

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For environmentally friendly innovative technologies and a sustainable future, fly ash/TiO₂ thin film nanocomposites are essential. Fly ash will be doped with titanium dioxide in this work in order to better understand its optical characteristics and employ it in semiconductor electrical devices. This study focused on the structure, morphology, and optical properties of fly ash/TiO₂ thin films. The spin-coating technique was used to create thin coatings of fly ash/TiO₂. For the first time, the doping of TiO₂ in the fly ash host at ratios of 1, 2, and 3 wt% was investigated with the thickness of all samples fixed. When compared to undoped thin films, the surface morphology of the doped thin films was improved. The weakly crystalline structure of the doped fly ash films was verified by XRD. The optical bandgap energy of these films was successfully reduced by the TiO₂ doping, going from 3.9 to 3.5 eV. With increasing dopant concentration, the value of Urbach energy is increasing. The optical band gap is clearly in opposition to the disorder. While it considerably improved the optical conductivity to a value of 4.1 x 10^9 s^(-1), it also raised the refractive index and extinction coefficient. Depending on the TiO₂ doping ratio, the transmittance decreased, and the reflection increased. As the TiO₂ concentration rises, the absorption of photon energy rises, and the absorption coefficient of photon energy is reduced. results in their possible use as solar energy and semiconductor materials.

Keywords: fly ash, structural analysis, optical properties, morphology

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Authors: Nidal Dwaikat

Abstract:

This work presents the development of alpha spectroscopy method with Solid-state nuclear track detectors using aluminum thin films. The resolution of this method is high, and it is able to discriminate between alpha particles at different incident energy. It can measure the exact number of alpha particles at specific energy without needing a calibration of alpha track diameter versus alpha energy. This method was tested by using Cf-252 alpha standard source at energies 5.11 Mev, 3.86 MeV and 2.7 MeV, which produced by the variation of detector -standard source distance. On front side, two detectors were covered with two Aluminum thin films and the third detector was kept uncovered. The thickness of Aluminum thin films was selected carefully (using SRIM 2013) such that one of the films will block the lower two alpha particles (3.86 MeV and 2.7 MeV) and the alpha particles at higher energy (5.11 Mev) can penetrate the film and reach the detector’s surface. The second thin film will block alpha particles at lower energy of 2.7 MeV and allow alpha particles at higher two energies (5.11 Mev and 3.86 MeV) to penetrate and produce tracks. For uncovered detector, alpha particles at three different energies can produce tracks on it. For quality assurance and accuracy, the detectors were mounted on thick enough copper substrates to block exposure from the backside. The tracks on the first detector are due to alpha particles at energy of 5.11 MeV. The difference between the tracks number on the first detector and the tracks number on the second detector is due to alpha particles at energy of 3.8 MeV. Finally, by subtracting the tracks number on the second detector from the tracks number on the third detector (uncovered), we can find the tracks number due to alpha particles at energy 2.7 MeV. After knowing the efficiency calibration factor, we can exactly calculate the activity of standard source.

Keywords: aluminium thin film, alpha particles, copper substrate, CR-39 detector

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Authors: Debabrata Bhadra, B. K. Chaudhuri

Abstract:

The operation of organic thin film transistors (OFETs) with low voltage is currently a prevailing issue. We have fabricated anthracene thin-film transistor (TFT) with an ultrathin layer (~450nm) of Poly-vinylidene fluoride (PVDF)/CuO nanocomposites as a gate insulator. We obtained a device with excellent electrical characteristics at low operating voltages (<1V). Different layers of the film were also prepared to achieve the best optimization of ideal gate insulator with various static dielectric constant (εr ). Capacitance density, leakage current at 1V gate voltage and electrical characteristics of OFETs with a single and multi layer films were investigated. This device was found to have highest field effect mobility of 2.27 cm2/Vs, a threshold voltage of 0.34V, an exceptionally low sub threshold slope of 380 mV/decade and an on/off ratio of 106. Such favorable combination of properties means that these OFETs can be utilized successfully as voltages below 1V. A very simple fabrication process has been used along with step wise poling process for enhancing the pyroelectric effects on the device performance. The output characteristic of OFET after poling were changed and exhibited linear current-voltage relationship showing the evidence of large polarization. The temperature dependent response of the device was also investigated. The stable performance of the OFET after poling operation makes it reliable in temperature sensor applications. Such High-ε CuO/PVDF gate dielectric appears to be highly promising candidates for organic non-volatile memory and sensor field-effect transistors (FETs).

Keywords: organic field effect transistors, thin film transistor, gate dielectric, organic semiconductor

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Authors: A. U. Moreh, M. Momoh, H. N. Yahya, B. Hamza, I. G. Saidu, S. Abdullahi

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This work studies the effect of thickness on structural and electrical properties of CuAlS2 thin films grown by two stage vacuum thermal evaporation technique. CuAlS2 thin films of thicknesses 50nm, 100nm and 200nm were deposited on suitably cleaned corning 7059 glass substrate at room temperature (RT). In the first stage Cu-Al precursors were grown at room temperature by thermal evaporation and in the second stage Cu-Al precursors were converted to CuAlS2 thin films by sulfurisation under sulfur atmosphere at the temperature of 673K. The structural properties of the films were examined by X-ray diffraction (XRD) technique while electrical properties of the specimens were studied using four point probe method. The XRD studies revealed that the films are of crystalline in nature having tetragonal structure. The variations of the micro-structural parameters, such as crystallite size (D), dislocation density ( ), and micro-strain ( ), with film thickness were investigated. The results showed that the crystallite sizes increase as the thickness of the film increases. The dislocation density and micro-strain decreases as the thickness increases. The resistivity (  ) of CuAlS2 film is found to decrease with increase in film thickness, which is related to the increase of carrier concentration with film thickness. Thus thicker films exhibit the lowest resistivity and high carrier concentration, implying these are the most conductive films. Low electrical resistivity and high carrier concentration are widely used as the essential components in various optoelectronic devices such as light-emitting diode and photovoltaic cells.

Keywords: CuAlS2, evaporation, sulfurisation, thickness, resistivity, crystalline

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Authors: Prajna Paramita Mohapatra, Pamu Dobbidi

Abstract:

Lithium ferrite (LiFe5O8) has potential applications as a component of microwave magnetic devices such as circulators and monolithic integrated circuits. For efficient device applications, spinel ferrites in the form of thin films are highly required. It is necessary to improve their magnetic and dielectric behavior by optimizing the processing parameters during deposition. The lithium ferrite thin films are deposited on Pt/Si substrate using the pulsed laser deposition technique (PLD). As controlling the film thickness is the easiest parameter to tailor the strain, we deposited the thin films having different film thicknesses (160 nm, 200 nm, 240 nm) at oxygen partial pressure of 0.001 mbar. The formation of single phase with spinel structure (space group - P4132) is confirmed by the XRD pattern and the Rietveld analysis. The optical bandgap is decreased with the increase in thickness. FESEM confirmed the formation of uniform grains having well separated grain boundaries. Further, the film growth and the roughness are analyzed by AFM. The root-mean-square (RMS) surface roughness is decreased from 13.52 nm (160 nm) to 9.34 nm (240 nm). The room temperature magnetization is measured with a maximum field of 10 kOe. The saturation magnetization is enhanced monotonically with an increase in thickness. The magnetic resonance linewidth is obtained in the range of 450 – 780 Oe. The dielectric response is measured in the frequency range of 104 – 106 Hz and in the temperature range of 303 – 473 K. With an increase in frequency, the dielectric constant and the loss tangent of all the samples decreased continuously, which is a typical behavior of conventional dielectric material. The real part of the dielectric constant and the dielectric loss is increased with an increase in thickness. The contribution of grain and grain boundaries is also analyzed by employing the equivalent circuit model. The highest dielectric constant is obtained for the film having a thickness of 240 nm at 104 Hz. The obtained results demonstrate that desired response can be obtained by tailoring the film thickness for the microwave magnetic devices.

Keywords: PLD, optical response, thin films, magnetic response, dielectric response

Procedia PDF Downloads 92