Search results for: threshold voltage shift
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 3202

Search results for: threshold voltage shift

3172 Memristive Properties of Nanostructured Porous Silicon

Authors: Madina Alimova, Margulan Ibraimov, Ayan Tileu

Abstract:

The paper describes methods for obtaining porous structures with the properties of a silicon-based memristor and explains the electrical properties of porous silicon films. Based on the results, there is a positive shift in the current-voltage characteristics (CVC) after each measurement, i.e., electrical properties depend not only on the applied voltage but also on the previous state. After 3 minutes of rest, the film returns to its original state (reset). The method for obtaining a porous silicon nanofilm with the properties of a memristor is simple and does not require additional effort. Based on the measurement results, the typical memristive behavior of the porous silicon nanofilm is analyzed.

Keywords: porous silicon, current-voltage characteristics, memristor, nanofilms

Procedia PDF Downloads 107
3171 A Low-Voltage Synchronous Command for JFET Rectifiers

Authors: P. Monginaud, J. C. Baudey

Abstract:

The synchronous, low-voltage command for JFET Rectifiers has many applications: indeed, replacing the traditional diodes by these components allows enhanced performances in gain, linearity and phase shift. We introduce here a new bridge, including JFET associated with pull-down, bipolar command systems, and double-purpose logic gates.

Keywords: synchronous, rectifier, MOSFET, JFET, bipolar command system, push-pull circuits, double-purpose logic gates

Procedia PDF Downloads 343
3170 SCR-Stacking Structure with High Holding Voltage for IO and Power Clamp

Authors: Hyun Young Kim, Chung Kwang Lee, Han Hee Cho, Sang Woon Cho, Yong Seo Koo

Abstract:

In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application.

Keywords: ESD, SCR, holding voltage, stack, power clamp

Procedia PDF Downloads 534
3169 Two-Dimensional Material-Based Negative Differential Resistance Device with High Peak-to- Valley Current Ratio for Multi-Valued Logic Circuits

Authors: Kwan-Ho Kim, Jin-Hong Park

Abstract:

The multi-valued logic (MVL) circuits, which can handle more than two logic states, are one of the promising solutions to overcome the bit density limitations of conventional binary logic systems. Recently, tunneling devices such as Esaki diode and resonant tunneling diode (RTD) have been extensively explored to construct the MVL circuits. These tunneling devices present a negative differential resistance (NDR) phenomenon in which a current decreases as a voltage increases in a specific applied voltage region. Due to this non-monotonic current behavior, the tunneling devices have more than two threshold voltages, consequently enabling construction of MVL circuits. Recently, the emergence of two dimensional (2D) van der Waals (vdW) crystals has opened up the possibility to fabricate such tunneling devices easily. Owing to the defect-free surface of the 2D crystals, a very abrupt junction interface could be formed through a simple stacking process, which subsequently allowed the implementation of a high-performance tunneling device. Here, we report a vdW heterostructure based tunneling device with multiple threshold voltages, which was fabricated with black phosphorus (BP) and hafnium diselenide (HfSe₂). First, we exfoliated BP on the SiO₂ substrate and then transferred HfSe₂ on BP using dry transfer method. The BP and HfSe₂ form type-Ⅲ heterojunction so that the highly doped n+/p+ interface can be easily implemented without additional electrical or chemical doping process. Owing to high natural doping at the junction, record high peak to valley ratio (PVCR) of 16 was observed to the best our knowledge in 2D materials based NDR device. Furthermore, based on this, we first demonstrate the feasibility of the ternary latch by connecting two multi-threshold voltage devices in series.

Keywords: two dimensional van der Waals crystal, multi-valued logic, negative differential resistnace, tunneling device

Procedia PDF Downloads 189
3168 A CMOS D-Band Power Amplifier in 22FDSOI Technology for 6G Applications

Authors: Karandeep Kaur

Abstract:

This paper presents the design of power amplifier (PA) for mmWave communication systems. The designed amplifier uses GlobalFoundries 22 FDX technology and works at an operational frequency of 140 GHz in the D-Band. With a supply voltage of 0.8V for the super low threshold voltage transistors, the amplifier is biased in class AB and has a total current consumption of 50 mA. The measured saturated output power from the power amplifier is 5.6 dBm with an output-referred 1dB-compression point of 1.6dBm. The measured gain of PA is 19 dB with 3 dB-bandwidth ranging from 120 GHz to 140 GHz. The chip occupies an area of 795µm × 410µm.

Keywords: mmWave communication system, power amplifiers, 22FDX, D-Band, cross-coupled capacitive neutralization

Procedia PDF Downloads 132
3167 Air Breakdown Voltage Prediction in Post-arcing Conditions for Compact Circuit Breakers

Authors: Jing Nan

Abstract:

The air breakdown voltage in compact circuit breakers is a critical factor in the design and reliability of electrical distribution systems. This voltage determines the threshold at which the air insulation between conductors will fail or 'break down,' leading to an arc. This phenomenon is highly sensitive to the conditions within the breaker, such as the temperature and the distance between electrodes. Typically, air breakdown voltage models have been reliable for predicting failure under standard operational temperatures. However, in conditions post-arcing, where temperatures can soar above 2000K, these models face challenges due to the complex physics of ionization and electron behaviour at such high-energy states. Building upon the foundational understanding that the breakdown mechanism is initiated by free electrons and propelled by electric fields, which lead to ionization and, potentially, to avalanche or streamer formation, we acknowledge the complexity introduced by high-temperature environments. Recognizing the limitations of existing experimental data, a notable research gap exists in the accurate prediction of breakdown voltage at elevated temperatures, typically observed post-arcing, where temperatures exceed 2000K.To bridge this knowledge gap, we present a method that integrates gap distance and high-temperature effects into air breakdown voltage assessment. The proposed model is grounded in the physics of ionization, accounting for the dynamic behaviour of free electrons which, under intense electric fields at elevated temperatures, lead to thermal ionization and potentially reach the threshold for streamer formation as Meek's criterion. Employing the Saha equation, our model calculates equilibrium electron densities, adapting to the atmospheric pressure and the hot temperature regions indicative of post-arc temperature conditions. Our model is rigorously validated against established experimental data, demonstrating substantial improvements in predicting air breakdown voltage in the high-temperature regime. This work significantly improves the predictive power for air breakdown voltage under conditions that closely mimic operational stressors in compact circuit breakers. Looking ahead, the proposed methods are poised for further exploration in alternative insulating media, like SF6, enhancing the model's utility for a broader range of insulation technologies and contributing to the future of high-temperature electrical insulation research.

Keywords: air breakdown voltage, high-temperature insulation, compact circuit breakers, electrical discharge, saha equation

Procedia PDF Downloads 59
3166 Analysis of SCR-Based ESD Protection Circuit on Holding Voltage Characteristics

Authors: Yong Seo Koo, Jong Ho Nam, Yong Nam Choi, Dae Yeol Yoo, Jung Woo Han

Abstract:

This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage.

Keywords: electro-static discharge (ESD), silicon controlled rectifier (SCR), holding voltage, protection circuit

Procedia PDF Downloads 357
3165 A Silicon Controlled Rectifier-Based ESD Protection Circuit with High Holding Voltage and High Robustness Characteristics

Authors: Kyoung-il Do, Byung-seok Lee, Hee-guk Chae, Jeong-yun Seo Yong-seo Koo

Abstract:

In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage

Procedia PDF Downloads 377
3164 Analog Voltage Inverter Drive for Capacitive Load with Adaptive Gain Control

Authors: Sun-Ki Hong, Yong-Ho Cho, Ki-Seok Kim, Tae-Sam Kang

Abstract:

Piezoelectric actuator is treated as RC load when it is modeled electrically. For some piezoelectric actuator applications, arbitrary voltage is required to actuate. Especially for unidirectional arbitrary voltage driving like as sine wave, some special inverter with circuit that can charge and discharge the capacitive energy can be used. In this case, the difference between power supply level and the object voltage level for RC load is varied. Because the control gain is constant, the controlled output is not uniform according to the voltage difference. In this paper, for charge and discharge circuit for unidirectional arbitrary voltage driving for piezoelectric actuator, the controller gain is controlled according to the voltage difference. With the proposed simple idea, the load voltage can have controlled smoothly although the voltage difference is varied. The appropriateness is proved from the simulation of the proposed circuit.

Keywords: analog voltage inverter, capacitive load, gain control, dc-dc converter, piezoelectric, voltage waveform

Procedia PDF Downloads 632
3163 Comparative Study of Line Voltage Stability Indices for Voltage Collapse Forecasting in Power Transmission System

Authors: H. H. Goh, Q. S. Chua, S. W. Lee, B. C. Kok, K. C. Goh, K. T. K. Teo

Abstract:

At present, the evaluation of voltage stability assessment experiences sizeable anxiety in the safe operation of power systems. This is due to the complications of a strain power system. With the snowballing of power demand by the consumers and also the restricted amount of power sources, therefore, the system has to perform at its maximum proficiency. Consequently, the noteworthy to discover the maximum ability boundary prior to voltage collapse should be undertaken. A preliminary warning can be perceived to evade the interruption of power system’s capacity. The effectiveness of line voltage stability indices (LVSI) is differentiated in this paper. The main purpose of the indices is used to predict the proximity of voltage instability of the electric power system. On the other hand, the indices are also able to decide the weakest load buses which are close to voltage collapse in the power system. The line stability indices are assessed using the IEEE 14 bus test system to validate its practicability. Results demonstrated that the implemented indices are practically relevant in predicting the manifestation of voltage collapse in the system. Therefore, essential actions can be taken to dodge the incident from arising.

Keywords: critical line, line outage, line voltage stability indices (LVSI), maximum loadability, voltage collapse, voltage instability, voltage stability analysis

Procedia PDF Downloads 334
3162 New Series Input Parallel Output LLC DC/DC Converter with the Input Voltage Balancing Capacitor for the Electric System of Electric Vehicles

Authors: Kang Hyun Yi

Abstract:

This paper presents a new parallel output LLC DC/DC converter for electric vehicle. The electric vehicle has two batteries. One is a high voltage battery for the powertrain of the vehicle and the other is a low voltage battery for the vehicle electric system. The low voltage is charged from the high voltage battery and the high voltage input and the high current output DC/DC converter is needed. Therefore, the new LLC converter with the input voltage compensation is proposed for the high voltage input and the low voltage output DC/DC converter. The proposed circuit has two LLC converters with the series input voltage from the battery for the powertrain and the parallel output low battery voltage for the vehicle electric system because the battery voltage for the powertrain and the electric power for the vehicle become high. Also, the input series voltage compensation capacitor is used for balancing the input current in the two LLC converters. The proposed converter has an equal electric stress of the semiconductor parts and the reactive components, high efficiency and good heat dissipation.

Keywords: electric vehicle, LLC DC/DC converter, input voltage balancing, parallel output

Procedia PDF Downloads 1029
3161 The Long-Run Impact of Financial Development on Greenhouse Gas Emissions in India: An Application of Regime Shift Based Cointegration Approach

Authors: Javaid Ahmad Dar, Mohammad Asif

Abstract:

The present study investigates the long-run impact of financial development, energy consumption and economic growth on greenhouse gas emissions for India, in presence of endogenous structural breaks, over a period of 1971-2013. Autoregressive distributed lag bounds testing procedure and Hatemi-J threshold cointegration technique have been used to test the variables for cointegration. ARDL bounds test did not confirm any cointegrating relationship between the variables. The threshold cointegration test establishes the presence of long-run impact of financial development, energy use and economic growth on greenhouse gas emissions in India. The results reveal that the long-run relationship between the variables has witnessed two regime shifts, in 1978 and 2002. The empirical evidence shows that financial sector development and energy consumption in India degrade environment. Unlike previous studies, this paper finds no statistical evidence of long-run relationship between economic growth and environmental deterioration. The study also challenges the existence of environmental Kuznets curve in India.

Keywords: cointegration, financial development, global warming, greenhouse gas emissions, regime shift, unit root

Procedia PDF Downloads 361
3160 Voltage Stability Assessment and Enhancement Using STATCOM -A Case Study

Authors: Puneet Chawla, Balwinder Singh

Abstract:

Recently, increased attention has been devoted to the voltage instability phenomenon in power systems. Many techniques have been proposed in the literature for evaluating and predicting voltage stability using steady state analysis methods. In this paper, P-V and Q-V curves have been generated for a 57 bus Patiala Rajpura circle of India. The power-flow program is developed in MATLAB using Newton-Raphson method. Using Q-V curves, the weakest bus of the power system and the maximum reactive power change permissible on that bus is calculated. STATCOMs are placed on the weakest bus to improve the voltage and hence voltage stability and also the power transmission capability of the line.

Keywords: voltage stability, reactive power, power flow, weakest bus, STATCOM

Procedia PDF Downloads 498
3159 Internal Node Stabilization for Voltage Sense Amplifiers in Multi-Channel Systems

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer by the parasitic capacitances of the input transistors in a voltage sense amplifier. Due to its intrinsic rail-to-rail voltage transition, the input sides are inevitably disturbed. It can possible disturb the stabilities of the reference voltage levels. Moreover, it becomes serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the systems. In order to alleviate the internal node voltage transition, the internal node stabilization technique is proposed by utilizing an additional biasing circuit. It achieves 47% and 43% improvements for node stabilization and input referred disturbance, respectively.

Keywords: voltage sense amplifier, voltage transition, node stabilization, biasing circuits

Procedia PDF Downloads 457
3158 Threshold Concepts in TESOL: A Thematic Analysis of Disciplinary Guiding Principles

Authors: Neil Morgan

Abstract:

The notion of Threshold Concepts has offered a fertile new perspective on the transformative effects of mastery of particular concepts on student understanding of subject matter and their developing identities as inductees into disciplinary discourse communities. Only by successfully traversing key knowledge thresholds, it is claimed, can neophytes gain access to the more sophisticated understandings of subject matter possessed by mature members of a discipline. This paper uses thematic analysis of disciplinary guiding principles to identify nine candidate Threshold Concepts that appear to underpin effective TESOL practice. The relationship between these candidate TESOL Threshold Concepts, TESOL principles, and TESOL instructional techniques appears to be amenable to a schematic representation based on superordinate categories of TESOL practitioner concern and, as such, offers an alternative to the view of Threshold Concepts as a privileged subset of disciplinary core concepts. The paper concludes by exploring the potential of a Threshold Concepts framework to productively inform TESOL initial teacher education (ITE) and in-service education and training (INSET).

Keywords: TESOL, threshold concepts, TESOL principles, TESOL ITE/INSET, community of practice

Procedia PDF Downloads 122
3157 Criterion-Referenced Test Reliability through Threshold Loss Agreement: Fuzzy Logic Analysis Approach

Authors: Mohammad Ali Alavidoost, Hossein Bozorgian

Abstract:

Criterion-referenced tests (CRTs) are designed to measure student performance against a fixed set of predetermined criteria or learning standards. The reliability of such tests cannot be based on internal reliability. Threshold loss agreement is one way to calculate the reliability of CRTs. However, the selection of master and non-master in such agreement is determined by the threshold point. The problem is if the threshold point witnesses a minute change, the selection of master and non-master may have a drastic change, leading to the change in reliability results. Therefore, in this study, the Fuzzy logic approach is employed as a remedial procedure for data analysis to obviate the threshold point problem. Forty-one Iranian students were selected; the participants were all between 20 and 30 years old. A quantitative approach was used to address the research questions. In doing so, a quasi-experimental design was utilized since the selection of the participants was not randomized. Based on the Fuzzy logic approach, the threshold point would be more stable during the analysis, resulting in rather constant reliability results and more precise assessment.

Keywords: criterion-referenced tests, threshold loss agreement, threshold point, fuzzy logic approach

Procedia PDF Downloads 344
3156 Low Trigger Voltage Silicon Controlled Rectifier Stacking Structure with High Holding Voltage for High Voltage Applications

Authors: Kyoung-Il Do, Jun-Geol Park, Hee-Guk Chae, Jeong-Yun Seo, Yong-Seo Koo

Abstract:

A SCR stacking structure is proposed to have improved Latch-up immunity. In comparison with conventional SCR (Silicon Controlled Rectifier), the proposed Electrostatic Discharge (ESD) protection circuit has a lower trigger characteristic by using the LVTSCR (Low Voltage Trigger) structure. Also the proposed ESD protection circuit has improved Holding Voltage Characteristic by using N-stack technique. These characteristics enable to have latch-up immunity in operating conditions. The simulations are accomplished by using the Synopsys TCAD. It has a trigger voltage of 8.9V and a holding voltage of 1.8V in a single structure. And when applying the stack technique, 2-stack has the holding voltage of 3.8V and 3-stack has the holding voltage of 5.1 V.

Keywords: electrostatic discharge (ESD), low voltage trigger silicon controlled rectifier (LVTSCR), MVTSCR, power clamp, silicon controlled rectifier (SCR), latch-up

Procedia PDF Downloads 425
3155 The Impact of Temperature on the Threshold Capillary Pressure of Fine-Grained Shales

Authors: Talal Al-Bazali, S. Mohammad

Abstract:

The threshold capillary pressure of shale caprocks is an important parameter in CO₂ storage modeling. A correct estimation of the threshold capillary pressure is not only essential for CO₂ storage modeling but also important to assess the overall economical and environmental impact of the design process. A standard step by step approach has to be used to measure the threshold capillary pressure of shale and non-wetting fluids at different temperatures. The objective of this work is to assess the impact of high temperature on the threshold capillary pressure of four different shales as they interacted with four different oil based muds, air, CO₂, N₂, and methane. This study shows that the threshold capillary pressure of shale and non-wetting fluid is highly impacted by temperature. An empirical correlation for the dependence of threshold capillary pressure on temperature when different shales interacted with oil based muds and gasses has been developed. This correlation shows that the threshold capillary pressure decreases exponentially as the temperature increases. In this correlation, an experimental constant (α) appears, and this constant may depend on the properties of shale and non-wetting fluid. The value for α factor was found to be higher for gasses than for oil based muds. This is consistent with our intuition since the interfacial tension for gasses is higher than those for oil based muds. The author believes that measured threshold capillary pressure at ambient temperature is misleading and could yield higher values than those encountered at in situ conditions. Therefore one must correct for the impact of temperature when measuring threshold capillary pressure of shale at ambient temperature.

Keywords: capillary pressure, shale, temperature, thresshold

Procedia PDF Downloads 351
3154 Voltage and Current Control of Microgrid in Grid Connected and Islanded Modes

Authors: Megha Chavda, Parth Thummar, Rahul Ghetia

Abstract:

This paper presents the voltage and current control of microgrid accompanied by the synchronization of microgrid with the main utility grid in both islanded and grid-connected modes. Distributed Energy Resources (DERs) satisfy the wide-spread power demand of consumer by behaving as a micro source for a low voltage (LV) grid or microgrid. Synchronization of the microgrid with the main utility grid is done using PLL and PWM gate pulse generation technique is used for the Voltage Source Converter. Potential Function method achieves the voltage and current control of this microgrid in both islanded and grid-connected modes. A low voltage grid consisting of three distributed generators (DG) is considered for the study and is simulated in time-domain using PSCAD/EMTDC software. The simulation results depict the appropriateness of voltage and current control of microgrid and synchronization of microgrid with the medium voltage (MV) grid.

Keywords: microgrid, distributed energy resources, voltage and current control, voltage source converter, pulse width modulation, phase locked loop

Procedia PDF Downloads 393
3153 Stabilization Technique for Multi-Inputs Voltage Sense Amplifiers in Node Sharing Converters

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer through the parasitic capacitances of the input transistors in a multi-inputs voltage sense amplifier. Its intrinsic rail-to-rail voltage transitions at the output nodes inevitably disturb the input sides through the capacitive coupling between the outputs and inputs. Then, it can possible degrade the stabilities of the reference voltage levels. Moreover, it becomes more serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the overall systems. In order to alleviate the internal node voltage transition, the internal node stabilization techniques are proposed. It achieves 45% and 40% improvements for node stabilization and input referred disturbance, respectively.

Keywords: voltage sense amplifier, multi-inputs, voltage transition, node stabilization, biasing circuits

Procedia PDF Downloads 543
3152 Analysis of Stacked SCR-Based ESD Protection Circuit with Low Trigger Voltage and Latch-Up Immunity

Authors: Jun-Geol Park, Kyoung-Il Do, Min-Ju Kwon, Kyung-Hyun Park, Yong-Seo Koo

Abstract:

In this paper, we proposed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuit for latch-up immunity. The proposed circuit has a lower trigger voltage and a higher holding voltage characteristic by using the zener diode structure. These characteristics prevent latch-up problem in normal operating conditions. The proposed circuit was analyzed to figure out the electrical characteristics by the variations of design parameters D1, D2 and stack technology to obtain the n-fold electrical characteristics. The simulations are accomplished by using the Synopsys TCAD simulator. When using the stack technology, 2-stack has the holding voltage of 6.9V and 3-stack has the holding voltage of 10.9V.

Keywords: ESD, SCR, trigger voltage, holding voltage

Procedia PDF Downloads 505
3151 An Active Rectifier with Time-Domain Delay Compensation to Enhance the Power Conversion Efficiency

Authors: Shao-Ku Kao

Abstract:

This paper presents an active rectifier with time-domain delay compensation to enhance the efficiency. A delay calibration circuit is designed to convert delay time to voltage and adaptive control on/off delay in variable input voltage. This circuit is designed in 0.18 mm CMOS process. The input voltage range is from 2 V to 3.6 V with the output voltage from 1.8 V to 3.4 V. The efficiency can maintain more than 85% when the load from 50 Ω ~ 1500 Ω for 3.6 V input voltage. The maximum efficiency is 92.4 % at output power to be 38.6 mW for 3.6 V input voltage.

Keywords: wireless power transfer, active diode, delay compensation, time to voltage converter, PCE

Procedia PDF Downloads 255
3150 Combined Localization, Beamforming, and Interference Threshold Estimation in Underlay Cognitive System

Authors: Omar Nasr, Yasser Naguib, Mohamed Hafez

Abstract:

This paper aims at providing an innovative solution for blind interference threshold estimation in an underlay cognitive network to be used in adaptive beamforming by secondary user Transmitter and Receiver. For the task of threshold estimation, blind detection of modulation and SNR are used. For the sake of beamforming several localization algorithms are compared to settle on best one for cognitive environment. Beamforming algorithms as LCMV (Linear Constraint Minimum Variance) and MVDR (Minimum Variance Distortion less) are also proposed and compared. The idea of just nulling the primary user after knowledge of its location is discussed against the idea of working under interference threshold.

Keywords: cognitive radio, underlay, beamforming, MUSIC, MVDR, LCMV, threshold estimation

Procedia PDF Downloads 560
3149 Coordinated Voltage Control in a Radial Distribution System

Authors: Shivarudraswamy, Anubhav Shrivastava, Lakshya Bhat

Abstract:

Distributed generation has indeed become a major area of interest in recent years. Distributed Generation can address large number of loads in a power line and hence has better efficiency over the conventional methods. However there are certain drawbacks associated with it, increase in voltage being the major one. This paper addresses the voltage control at the buses for an IEEE 30 bus system by regulating reactive power. For carrying out the analysis, the suitable location for placing distributed generators (DG) is identified through load flow analysis and seeing where the voltage profile is dipping. MATLAB programming is used to regulate the voltage at all buses within +/-5% of the base value even after the introduction of DG’s. Three methods for regulation of voltage are discussed. A sensitivity based analysis is later carried out to determine the priority among the various methods listed in the paper.

Keywords: distributed generators, distributed system, reactive power, voltage control

Procedia PDF Downloads 475
3148 Electro-Optic Parameters of Ferroelectric Particles- Liquid Crystal Composites

Authors: T. D. Ibragimov, A. R. Imamaliyev, G. M. Bayramov

Abstract:

Influence of barium titanate particles on electro-optic properties of liquid crystal 4-cyano-4′-pentylbiphenyl (5CB) with positive dielectric anisotropy and the liquid crystalline (LC) mixture Н-37 consisting of 4-methoxybezylidene-4'–butylaniline and 4-ethoxybezylidene-4'–butylaniline with negative dielectric anisotropy was investigated. It was shown that a presence of particles inside 5СВ and H-37 decreased the clearing temperature from 35.2 °С to 32.5°С and from 61.2 oC to 60.1oC, correspondingly. The threshold voltage of the Fredericksz effect became 0.3 V for the BaTiO3-5CB colloid while the beginning of this effect of the pure 5СВ was observed at 2.1 V. Threshold voltage of the Fredericksz effect increased from 2.8 V to up 3.1 V at additive of particles into H-37. A rise time of the BaTiO3-5CB colloid improved while a decay time worsened in comparison with the pure 5CB at all applied voltages. The inverse trends were observed for the H-37 matrix, namely, a rise time worsened and a decay time improved. Among other things, the effect of fast light modulation was studied at application of the rectangular impulse with direct bias to an electro-optical cell with the BaTiO3 particles+5CB and the pure 5CB. At this case, a rise time of the composite worsened, a decay time improved in comparison with the pure 5CB. The pecularities of electrohydrodynamic instability (EHDI) formation was also investigated into the composite with the H-37 matrix. It was found that the voltage of the EHDI formation decreased, a rise time increased and a decay time decreased in comparison with the pure H-37. First of all, experimental results are explained by appearance of local electric fields near the polarized ferroelectric particles at application of external electric field and an existence of the additional obstacles (particles) for movement of ions.

Keywords: liquid crystal, ferroelectric particles, composite, electro-optics

Procedia PDF Downloads 686
3147 Comparative Study of Al₂O₃ and HfO₂ as Gate Dielectric on AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors

Authors: Kaivan Karami, Sahalu Hassan, Sanna Taking, Afesome Ofiare, Aniket Dhongde, Abdullah Al-Khalidi, Edward Wasige

Abstract:

We have made a comparative study on the influence of Al₂O₃ and HfO₂ grown using atomic layer deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of Al₂O₃ and HfO₂ respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al₂O₃ gate dielectric layers respectively. The negative shift for the 20 nm HfO2 and 20 nm Al₂O₃ were 1.2 V and 4.9 V respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO₂ than Al₂O₃. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 10^4 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

Procedia PDF Downloads 79
3146 Electrochemical Studies of Si, Si-Ge- and Ge-Air Batteries

Authors: R. C. Sharma, Rishabh Bansal, Prajwal Menon, Manoj K. Sharma

Abstract:

Silicon-air battery is highly promising for electric vehicles due to its high theoretical energy density (8470 Whkg⁻¹) and its discharge products are non-toxic. For the first time, pure silicon and germanium powders are used as anode material. Nickel wire meshes embedded with charcoal and manganese dioxide powder as cathode and concentrated potassium hydroxide is used as electrolyte. Voltage-time curves have been presented in this study for pure silicon and germanium powder and 5% and 10% germanium with silicon powder. Silicon powder cell assembly gives a stable voltage of 0.88 V for ~20 minutes while Si-Ge provides cell voltage of 0.80-0.76 V for ~10-12 minutes, and pure germanium cell provides cell voltage 0.80-0.76 V for ~30 minutes. The cell voltage is higher for concentrated (10%) sodium hydroxide solution (1.08 V) and it is stable for ~40 minutes. A sharp decrease in cell voltage beyond 40 min may be due to rapid corrosion.

Keywords: Silicon-air battery, Germanium-air battery, voltage-time curve, open circuit voltage, Anodic corrosion

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3145 High-Quality Flavor of Black Belly Pork under Lightning Corona Discharge Using Tesla Coil for High Voltage Education

Authors: Kyung-Hoon Jang, Jae-Hyo Park, Kwang-Yeop Jang, Dongjin Kim

Abstract:

The Tesla coil is an electrical resonant transformer circuit designed by inventor Nikola Tesla in 1891. It is used to produce high voltage, low current and high frequency alternating current electricity. Tesla experimented with a number of different configurations consisting of two or sometimes three coupled resonant electric circuits. This paper focuses on development and high voltage education to apply a Tesla coil to cuisine for high quality flavor and taste conditioning as well as high voltage education under 50 kV corona discharge. The result revealed that the velocity of roasted black belly pork by Tesla coil is faster than that of conventional methods such as hot grill and steel plate etc. depending on applied voltage level and applied voltage time. Besides, carbohydrate and crude protein increased, whereas natrium and saccharides significantly decreased after lightning surge by Tesla coil. This idea will be useful in high voltage education and high voltage application.

Keywords: corona discharge, Tesla coil, high voltage application, high voltage education

Procedia PDF Downloads 307
3144 Resonant Tunnelling Diode Output Characteristics Dependence on Structural Parameters: Simulations Based on Non-Equilibrium Green Functions

Authors: Saif Alomari

Abstract:

The paper aims at giving physical and mathematical descriptions of how the structural parameters of a resonant tunnelling diode (RTD) affect its output characteristics. Specifically, the value of the peak voltage, peak current, peak to valley current ratio (PVCR), and the difference between peak and valley voltages and currents ΔV and ΔI. A simulation-based approach using the Non-Equilibrium Green Function (NEGF) formalism based on the Silvaco ATLAS simulator is employed to conduct a series of designed experiments. These experiments show how the doping concentration in the emitter and collector layers, their thicknesses, and the width of the barriers and the quantum well influence the above-mentioned output characteristics. Each of these parameters was systematically changed while holding others fixed in each set of experiments. Factorial experiments are outside the scope of this work and will be investigated in future. The physics involved in the operation of the device is thoroughly explained and mathematical models based on curve fitting and underlaying physical principles are deduced. The models can be used to design devices with predictable output characteristics. These models were found absent in the literature that the author acanned. Results show that the doping concentration in each region has an effect on the value of the peak voltage. It is found that increasing the carrier concentration in the collector region shifts the peak to lower values, whereas increasing it in the emitter shifts the peak to higher values. In the collector’s case, the shift is either controlled by the built-in potential resulting from the concentration gradient or the conductivity enhancement in the collector. The shift to higher voltages is found to be also related to the location of the Fermi-level. The thicknesses of these layers play a role in the location of the peak as well. It was found that increasing the thickness of each region shifts the peak to higher values until a specific characteristic length, afterwards the peak becomes independent of the thickness. Finally, it is shown that the thickness of the barriers can be optimized for a particular well width to produce the highest PVCR or the highest ΔV and ΔI. The location of the peak voltage is important in optoelectronic applications of RTDs where the operating point of the device is usually the peak voltage point. Furthermore, the PVCR, ΔV, and ΔI are of great importance for building RTD-based oscillators as they affect the frequency response and output power of the oscillator.

Keywords: peak to valley ratio, peak voltage shift, resonant tunneling diodes, structural parameters

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3143 High-Frequency Full-Bridge Isolated DC-DC Converter for Fuel Cell Power Generation Systems

Authors: Nabil A. Ahmed

Abstract:

DC-DC converters are necessary to interface low-voltage fuel cell power generation systems to a higher voltage DC bus system. A system and method for generating a regulated output power from fuel cell power generation systems is proposed in this paper, this includes a soft-switching isolated DC-DC converter to reduce the idling and circulating currents. The system incorporates a high-frequency center tap transformer link DC-DC converter using secondary-side soft switching control. Snubber capacitors including the parasitic capacitance of the switching devices and the transformer leakage inductance are utilized to achieve zero-voltage switching (ZVS) in the primary side of the high-frequency transformer. Therefore, no extra resonant components are required for ZVS. The inherent soft-switching capability allows high power density, efficient power conversion, and compact packaging. A prototype rated at 6.5 kW is proposed and simulated. Simulation results confirmed a wide range of soft-switching operation and consequently high conversion efficiency will be achieved.

Keywords: secondary-side, phase-shift, high-frequency transformer, zero voltage, zero current, soft switching operation, switching losses

Procedia PDF Downloads 288