Search results for: niobium nitride (NbN)

Authors: Uwa C. A., Jamiru T.

Abstract:

Aluminum based alloys with a certain compositional blend and manufacturing method have been reported to have excellent electrical conductors. In the current investigation, metal powders of Aluminum (Al), Copper (Cu), Niobium (Nb), and Molybdenum (Mo) were weighed in accordance with certain ratios and spread equally by combining the powder particles. The metal particles were mixed using a tube mixer for 12 hours. Before pouring into a 30mm-diameter graphite mold, pre-pressed, and placed into an SPS furnace, the thermal conductivity of the mixed metal powders was evaluated using a portable Thermtest device. Axial pressure of 50 MPa was used at a heating rate of 50 oC/min, and a multi-stage heating procedure with a holding period of 10 min. was used to sinter at temperatures between 300 oC and 480 oC. After being cooled to room temperature, the specimens were unmolded to produce the aluminum, copper, niobium, and molybdenum alloy material. The HPS 2662 Precision Four-point Probe Meter was used to determine the electrical resistivity and the values used to calculate the electrical conductivity of the sintered alloy samples. Finally, the alloy with the highest electrical conductivity and thermal conductivity qualities was the one with the following composition: Al 93.5Cu4Nb1.5Mo1. It also had a density of 3.23 g/cm3. It could be advisable for usage in automobile radiator and electric transmission line components.

Keywords: Al-Cu-Nb-Mo, electrical conductivity, alloy, sintering, thermal conductivity

Procedia PDF Downloads 85

Authors: Mohannad Mayyas, Farshid Pahlevani, Veena Sahajwalla

Abstract:

Automotive shredder residue (ASR) is an industrial waste, generated during the recycling process of End-of-life vehicles. The large increasing production volumes of ASR and its hazardous content have raised concerns worldwide, leading some countries to impose more restrictions on ASR waste disposal and encouraging researchers to find efficient solutions for ASR processing. Although a great deal of research work has been carried out, all proposed solutions, to our knowledge, remain commercially and technically unproven. While the volume of waste materials continues to increase, the production of materials from new sustainable sources has become of great importance. Advanced ceramic materials such as nitrides, carbides and borides are widely used in a variety of applications. Among these ceramics, a great deal of attention has been recently paid to Titanium nitride (TiN) owing to its unique characteristics. In our study, we propose a new sustainable approach for ASR management where TiN nanoparticles with ideal particle size ranging from 200 to 315 nm can be synthesized as a by-product. In this approach, TiN is thermally synthesized by nitriding pressed mixture of automotive shredder residue (ASR) incorporated with titanium oxide (TiO2). Results indicated that TiO2 influences and catalyses degradation reactions of ASR and helps to achieve fast and full decomposition. In addition, the process resulted in titanium nitride (TiN) ceramic with several unique structures (porous nanostructured, polycrystalline, micro-spherical and nano-sized structures) that were simply obtained by tuning the ratio of TiO2 to ASR, and a product with appreciable TiN content of around 85% was achieved after only one hour nitridation at 1550 °C.

Keywords: automotive shredder residue, nano-ceramics, waste treatment, titanium nitride, thermal conversion

Procedia PDF Downloads 289

Authors: J. Skibinski, P. Caban, T. Wejrzanowski, K. J. Kurzydlowski

Abstract:

In the present study, numerical simulations of heat and mass transfer during gallium nitride growth process in Metal Organic Vapor Phase Epitaxy reactor AIX-200/4RF-S is addressed. Existing knowledge about phenomena occurring in the MOVPE process allows to produce high quality nitride based semiconductors. However, process parameters of MOVPE reactors can vary in certain ranges. Main goal of this study is optimization of the process and improvement of the quality of obtained crystal. In order to investigate this subject a series of computer simulations have been performed. Numerical simulations of heat and mass transfer in GaN epitaxial growth process have been performed to determine growth rate for various mass flow rates and pressures of reagents. According to the fact that it’s impossible to determine experimentally the exact distribution of heat and mass transfer inside the reactor during the process, modeling is the only solution to understand the process precisely. Main heat transfer mechanisms during MOVPE process are convection and radiation. Correlation of modeling results with the experiment allows to determine optimal process parameters for obtaining crystals of highest quality.

Keywords: Finite Volume Method, semiconductors, epitaxial growth, metalorganic vapor phase epitaxy, gallium nitride

Procedia PDF Downloads 391

Authors: Joseph E. Estevez, Mahdi Ghazizadeh, James G. Ryan, Ajit D. Kelkar

Abstract:

Radiation shielding is an obstacle in long duration space exploration. Boron Nitride Nanotubes (BNNTs) have attracted attention as an additive to radiation shielding material due to B10’s large neutron capture cross section. The B10 has an effective neutron capture cross section suitable for low energy neutrons ranging from 10-5 to 104 eV and hydrogen is effective at slowing down high energy neutrons. Hydrogenated BNNTs are potentially an ideal nanofiller for radiation shielding composites. We use Molecular Dynamics (MD) Simulation via Material Studios Accelrys 6.0 to model the Young’s Modulus of Hydrogenated BNNTs. An extrapolation technique was employed to determine the Young’s Modulus due to the deformation of the nanostructure at its theoretical density. A linear regression was used to extrapolate the data to the theoretical density of 2.62g/cm3. Simulation data shows that the hydrogenated BNNTs will experience a 11% decrease in the Young’s Modulus for (6,6) BNNTs and 8.5% decrease for (8,8) BNNTs compared to non-hydrogenated BNNT’s. Hydrogenated BNNTs are a viable option as a nanofiller for radiation shielding nanocomposite materials for long range and long duration space exploration.

Keywords: boron nitride nanotube, radiation shielding, young modulus, atomistic modeling

Procedia PDF Downloads 287

Authors: A. S. Hakeem, B. Ahmed, M. Ehsan, A. Ibrahim, H. M. Irshad, T. Laoui

Abstract:

Alumina (Al2O3) - cubic boron nitride (cBN) ceramic composites were sintered by spark plasma sintering (SPS) using α-Al2O3 particle sizes; 150 µm, 150 nm and cBN particle size of 42 µm. Alumina-cBN composites containing 10, 20 and 30wt% cBN with and without Ni coated were sintering at an elevated temperature of 1400°C at a constant uniaxial pressure of 50 MPa. The effect of matrix particle size, cBN and Ni content on mechanical properties and thermal properties, i.e., thermal conductivity, diffusivity, expansion, densification, phase transformation, microstructure, hardness and toughness of the Al2O3-cBN/(Ni) composites under specific sintering conditions were investigated. The highest relative densification of 150 nm-Al2O3 containing 30wt% cBN (Ni coated) composite was 99% at TSPS = 1400°C. In case of 150 µm- Al2O3 compositions, the phase transformation of cBN to hBN were observed, and the relative densification decreased. Thermal conductivity depicts maximum value in case of 150 nm- Al2O3-30wt% cBN-Ni composition. The Vickers hardness of this composition at TSPS = 1400°C also showed the highest value of 29 GPa.

Keywords: alumina composite, cubic boron nitride, mechanical properties, phase transformation, Spark plasma sintering

Procedia PDF Downloads 336

Authors: Matthias Leitner, Gernot Pottlacher

Abstract:

Experimental determination of critical point data like critical temperature, critical pressure, critical volume and critical compressibility of high-melting metals such as niobium is very rare due to the outstanding experimental difficulties in reaching the necessary extreme temperature and pressure regimes. Experimental techniques to achieve such extreme conditions could be diamond anvil devices, two stage gas guns or metal samples hit by explosively accelerated flyers. Electrical pulse-heating under increased pressures would be another choice. This technique heats thin wire samples of 0.5 mm diameter and 40 mm length from room temperature to melting and then further to the end of the stable phase, the spinodal line, within several microseconds. When crossing the spinodal line, the sample explodes and reaches the gaseous phase. In our laboratory, pulse-heating experiments can be performed under variation of the ambient pressure from 1 to 5000 bar and allow a direct determination of critical point data for low-melting, but not for high-melting metals. However, the critical point also can be estimated by extrapolating the liquid phase density according to theoretical models. A reasonable prerequisite for the extrapolation is the existence of data that cover as much as possible of the liquid phase and at the same time exhibit small uncertainties. Ohmic pulse-heating was therefore applied to determine thermal volume expansion, and from that density of niobium over the entire liquid phase. As a first step, experiments under ambient pressure were performed. The second step will be to perform experiments under high-pressure conditions. During the heating process, shadow images of the expanding sample wire were captured at a frame rate of 4 × 105 fps to monitor the radial expansion as a function of time. Simultaneously, the sample radiance was measured with a pyrometer operating at a mean effective wavelength of 652 nm. To increase the accuracy of temperature deduction, spectral emittance in the liquid phase is also taken into account. Due to the high heating rates of about 2 × 108 K/s, longitudinal expansion of the wire is inhibited which implies an increased radial expansion. As a consequence, measuring the temperature dependent radial expansion is sufficient to deduce density as a function of temperature. This is accomplished by evaluating the full widths at half maximum of the cup-shaped intensity profiles that are calculated from each shadow image of the expanding wire. Relating these diameters to the diameter obtained before the pulse-heating start, the temperature dependent volume expansion is calculated. With the help of the known room-temperature density, volume expansion is then converted into density data. The so-obtained liquid density behavior is compared to existing literature data and provides another independent source of experimental data. In this work, the newly determined off-critical liquid phase density was in a second step utilized as input data for the estimation of niobium’s critical point. The approach used, heuristically takes into account the crossover from mean field to Ising behavior, as well as the non-linearity of the phase diagram’s diameter.

Keywords: critical point data, density, liquid metals, niobium, ohmic pulse-heating, volume expansion

Procedia PDF Downloads 213

Authors: Mario Alejandro Grisales, M. Daniela Chimá, Gilberto Bejarano Gaitán

Abstract:

High entropy alloys (HEA) and nitride (HEN) are currently very attractive to the automotive, aerospace, metalworking and materials forming manufacturing industry, among others, for exhibiting higher mechanical properties, wear resistance, and thermal stability than binary and ternary alloys. In this work medium-entropy coatings of TiTaZrNb and the nitrides of (TiTaZrNb)Nx were synthesized on to AISI 420 and M2 steel samples by the direct current magnetron sputtering technique. The influence of the bias voltage supplied to the substrate on the microstructure, chemical- and phase composition of the matrix coating was evaluated, and the effect of nitrogen flow on the microstructural, mechanical and tribological properties of the corresponding nitrides was studied. A change in the crystalline structure from BCC for TiTaZrNb coatings to FCC for (TiTaZrNb)Nx was observed, that is associated with the incorporation of nitrogen into the matrix and the consequent formation of a solid solution of (TiTaZrNb)Nx. An increase in hardness and residual stresses was observed with increasing bias voltage for TiTaZrNb, reaching 12.8 GPa for the coating deposited with a bias of -130V. In the case of (TiTaZrNb)Nx nitride, a greater hardness of 23 GPa is achieved for the coating deposited with a N2 flow of 12 sccm, which slightly drops to 21.7 GPa for that deposited with N2 flow of 15 sccm. The slight reduction in hardness could be associated with the precipitation of the TiN and ZrN phases that are formed at higher nitrogen flows. The specific wear rate of the deposited coatings ranged between 0.5xexp13 and 0.6xexp13 N/m2. The steel substrate exhibited an average hardness of 2.0 GPa and a specific wear rate of 203.2exp13 N/m2. Both the hardness and the specific wear rate of the synthesized nitride coatings were higher than that of the steel substrate, showing a protective effect of the steel against wear.

Keywords: medium entropy coatings, hard coatings, magnetron sputtering, tribology, wear resistance

Procedia PDF Downloads 66

Authors: Abdalla Mohamed Eblabla

Abstract:

Due to the high increase and demand for a wide assortment of applications that require low-cost, high-efficiency, and compact systems, RF power amplifiers are considered the most critical design blocks and power consuming components in wireless communication, TV transmission, radar, and RF heating. Therefore, much research has been carried out in order to improve the performance of power amplifiers. Classes-A, B, C, D, E, and F are the main techniques for realizing power amplifiers. An implementation of high efficiency class-F power amplifier with Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) was realized in this paper. The simulation and optimization of the class-F power amplifier circuit model was undertaken using Agilent’s Advanced Design system (ADS). The circuit was designed using lumped elements.

Keywords: Power Amplifier (PA), gallium nitride (GaN), Agilent’s Advanced Design System (ADS), lumped elements

Procedia PDF Downloads 434

Authors: F. Dabir, R. Sarraf-Mamoory, N. Riahi-Noori

Abstract:

In this work, a nanostructured TiO2 layer was coated onto a FTO-less glass substrate using screen printing technique for back contact DSSC application. Then, titanium nitride thin film was applied on TiO2 layer by plasma assisted chemical vapor deposition (PACVD) as charge collector layer. The microstructure of prepared TiO2 layer was characterized by SEM. The sheet resistance, microstructure and elemental composition of titanium nitride thin films were analysed by four point probe, SEM, and EDS, respectively. TiO2 layer had porous nanostructure. The EDS analysis of TiN thin film showed presence of chlorine impurity. Sheet resistance of TiN thin film was 30 Ω/sq. With respect to the results, PACVD TiN can be a good candidate as a charge collector layer in back contacts DSSC.

Keywords: TiO2, TiN, charge collector, DSSC

Procedia PDF Downloads 460

Authors: Roaa Sait, Richard Cross

Abstract:

The synthesis and characterization of one dimensional nanostructure such as nanowires has received considerable attention. Much effort has concentrated on TiN material especially in the biological field due to its useful and unique properties in this field. Therefore, for the purpose of this project, synthesis of Titanium Nitride (TiN) nanowires (NWs) will be presented. They will be synthesised by growing titanium dioxide (Ti) NWs in an aqueous solution at low temperatures under atmospheric pressure. Then the grown nanowires will undergo a 'Nitrodation process' in which results in the formation of TiN NWs. The structure, morphology and composition of the grown nanowires will be characterized using Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-ray Diffraction (XRD) and Cyclic Voltammetry (CV). Obtaining TiN NWs is a challenging task since it has not been formulated before, as far as we acknowledge. This might be due to the fact that nitriding Ti NWs can be difficult in terms of optimizing experimental parameters.

Keywords: nanowires, dissolution-growth, nucleation, PECVD, deposition, spin coating, scanning electron microscopic analysis, cyclic voltammetry analysis

Procedia PDF Downloads 352

Authors: Ye Ling, Ruan Haihui

Abstract:

Aqueous Zn-ion hybrid supercapacitors (AZHSCs) pertain to a new type of electrochemical energy storage device that has received considerable attention. They integrate the advantages of high-energy Zn-ion batteries and high-power supercapacitors to meet the demand for low-cost, long-term durability, and high safety. Nevertheless, the challenge caused by the finite ion adsorption/desorption capacity of carbon electrodes gravely limits their energy densities. This work describes titanium nitride@nitrogen-doped carbon nanocage (TiN@NCNC) composite cathodes for AZHSCs to achieve a greatly improved energy density, and the composites can be facile synthesized based on the calcination of a mixture of tetrabutyl titanate and zeolitic imidazolate framework-8 in argon atmosphere. The resulting composites are featured by the ultra-fine TiN particles dispersed uniformly on the NCNC surfaces, enhancing the Zn2+ storage capabilities. Using TiN@NCNC cathodes, the AZHSCs can operate stably with a high energy density of 154 Wh kg-¹ at a specific power of 270 W kg-¹ and achieve a remarkable capacity retention of 88.9% after 104 cycles at 5 A g-¹. At an extreme specific power of 8.7 kW kg-1, the AZHSCs can retain an energy density of 97.2 Wh kg-1. With these results, we stress that the TiN@NCNC cathodes render high-performance AZHSCs, and the facile one-pot method can easily be scaled up, which enables AZHSCs a new energy-storage component for managing intermitted renewable energy sources.

Keywords: Zn-ion hybrid supercapacitors, ion absorption/desorption reactions, titanium nitride, zeolitic imidazolate framework-8

Procedia PDF Downloads 37

Authors: Karuna Tuchinda, Sasithon Bland

Abstract:

This work investigates the wear of a steam turbine blade coated with titanium nitride (TiN), and compares to the wear of uncoated blades. The coating is deposited on by physical vapor deposition (PVD) method. The working conditions of the blade were simulated and surface temperature and pressure values as well as flow velocity and flow direction were obtained. This data was used in the finite element wear model developed here in order to predict the wear of the blade. The wear mechanisms considered are erosive wear due to particle impingement and fluid jet, and fatigue wear due to repeated impingement of particles and fluid jet. Results show that the life of the TiN-coated blade is approximately 1.76 times longer than the life of the uncoated one.

Keywords: physical vapour deposition, steam turbine blade, titanium-based coating, wear prediction

Procedia PDF Downloads 366

Authors: Kerem Can Dizdar, Semih Ateş, Ozan Güler, Gökhan Basman, Derya Dışpınar, Cevat Fahir Arısoy

Abstract:

Grain refinement and obtaining homogeneous microstructure is the key parameter in casting of aluminum alloys. Ti has been traditionally used as grain refiner, however, inconsistency and heterogeneous dendrite arms, as well as fading efficiency, have been the drawbacks of Ti. Alternatively, Nb (Niobium) has gained attention. In this work, the effect of Nb was investigated in case of both as cast and T6 heat treated conditions. Different ratios of Nb (0.0, 0.03, 0.05, 0.07, 0.1 weight%) were added to AlSi11 alloy, mechanical properties were examined statistically, and relationship was established between microstructure and mechanical properties by examining the grain size and dendrite characteristics before and after heat treatment. Results indicate that in the case of as cast state; with the increasing addition of Nb has no significant effect on yield strength, however, it increases the tensile strength and elongation starting with 0.05wt% ratio, and it remains constant up to 0.1wt%. For the heat-treated condition; Nb addition provides increment at yield strength and tensile strength up to 0.05wt%, but it leads to decrementfrom 0.05 to 0.1wt%. The opposite is valid for the elongation; It decreases in between 0-0.05wt% then rises in range of 0.05-0.1wt%. Highest yield strength and ultimate tensile strength were found T6 heat treated 0.05wt% Nb addition. 0.05wt% was found as critical Nbaddition ratio for mechanical properties of Al-11Si alloys. Grain refinement and obtaining homogeneous microstructure is the key parameter in casting of aluminum alloys. Ti has been traditionally used as grain refiner, however, inconsistency and heterogeneous dendrite arms, as well as fading efficiency, have been the drawbacks of Ti. Alternatively, Nb (Niobium) has gained attention. In this work, the effect of Nb was investigated in case of both as cast and T6 heat treated conditions. Different ratios of Nb (0.0, 0.03, 0.05, 0.07, 0.1 weight%) were added to AlSi11 alloy, mechanical properties were examined statistically, and relationship was established between microstructure and mechanical properties by examining the grain size and dendrite characteristics before and after heat treatment. Results indicate that in the case of as cast state; with the increasing addition of Nb has no significant effect on yield strength, however, it increases the tensile strength and elongation starting with 0.05wt% ratio, and it remains constant up to 0.1wt%. For the heat-treated condition; Nb addition provides increment at yield strength and tensile strength up to 0.05wt%, but it leads to decrement from 0.05 to 0.1wt%. The opposite is valid for the elongation; It decreases in between 0-0.05wt% then rises in range of 0.05-0.1wt%. Highest yield strength and ultimate tensile strength were found T6 heat treated 0.05wt% Nb addition. 0.05wt% was found as critical Nbaddition ratio for mechanical properties of Al-11Si alloys.

Keywords: al-si alloy, grain refinement, heat treatment, mechanical properties, microstructure, niobium, sand casting

Procedia PDF Downloads 144

Authors: Nikhil Jain, Yang Xu, Bin Yu

Abstract:

The material behavior of graphene, a single layer of carbon lattice, is extremely sensitive to its dielectric environment. We demonstrate improvement in electronic performance of graphene nanowire interconnects with full encapsulation by lattice-matching, chemically inert, 2D layered insulator hexagonal boron nitride (h- BN). A novel layer-based transfer technique is developed to construct the h-BN/MLG/h-BN heterostructures. The encapsulated graphene wires are characterized and compared with that on SiO2 or h-BN substrate without passivating h-BN layer. Significant improvements in maximum current-carrying density, breakdown threshold, and power density in encapsulated graphene wires are observed. These critical improvements are achieved without compromising the carrier transport characteristics in graphene. Furthermore, graphene wires exhibit electrical behavior less insensitive to ambient conditions, as compared with the non-passivated ones. Overall, h-BN/graphene/h- BN heterostructure presents a robust material platform towards the implementation of high-speed carbon-based interconnects.

Keywords: two-dimensional nanosheet, graphene, hexagonal boron nitride, heterostructure, interconnects

Procedia PDF Downloads 313

Authors: Nikhil Jain, Bin Yu

Abstract:

The material behavior of graphene, a single layer of carbon lattice, is extremely sensitive to its dielectric environment. We demonstrate improvement in electronic performance of graphene nanowire interconnects with full encapsulation by lattice-matching, chemically inert, 2D layered insulator hexagonal boron nitride (h-BN). A novel layer-based transfer technique is developed to construct the h-BN/MLG/h-BN heterostructures. The encapsulated graphene wires are characterized and compared with that on SiO2 or h-BN substrate without passivating h-BN layer. Significant improvements in maximum current-carrying density, breakdown threshold, and power density in encapsulated graphene wires are observed. These critical improvements are achieved without compromising the carrier transport characteristics in graphene. Furthermore, graphene wires exhibit electrical behavior less insensitive to ambient conditions, as compared with the non-passivated ones. Overall, h-BN/graphene/h-BN heterostructure presents a robust material platform towards the implementation of high-speed carbon-based interconnects.

Keywords: two-dimensional nanosheet, graphene, hexagonal boron nitride, heterostructure, interconnects

Procedia PDF Downloads 447

Authors: A. Mohammed, R. Lewis, M. Marshall

Abstract:

Commonly used coatings to protect tools in die casting were used. A heat treatment and then surface coating can have a large effect on erosion damage. Samples have been tested to evaluate their resistances to erosive wear and to assess how this compares with behaviour seen for untreated material. Five commercial (PN + TiN), (PN + TiAlCN), (TiN X 2), (TiN), and (TiAlCN) coatings have been evaluated for their wear resistance. The objective was to permit an optimized selection of coatings to be used to give good resistance to erosive wear. A test-Rig has been developed to study the erosive wear in aluminium die casting and provide an environment similar to industrial operation that is more practical than using actual machines. These surfaces were analysed using a Scanning Electron Microscope (SEM) and Optical Microscopes each with a different level of resolution. Examination of coating materials revealed an important parameter associated with the failure of the coating materials.This was adhesion of the coating material to the substrate surface. A well-adhered coating withstands wear much better compared to the poorest-adhering coating.

Keywords: solid particle erosion, PVD-coatings, steel, erosion testing

Procedia PDF Downloads 235

Authors: Bekhedda Kheira

Abstract:

Rare earth-doped luminescent materials (Ce, Eu, Yb, Tb, etc.) are now widely used in flat-screen displays, fluorescent lamps, and photovoltaic solar cells. They exhibit several fine emission bands in a spectral range from near UV to infrared when added to inorganic materials. This study chose cerium oxide (CeO2) because of its exceptional intrinsic properties, energy levels, and ease of implementation of doped layer synthesis. In this study, thin films were obtained by the evaporation deposition technique of cerium oxide (CeO2) on silicon Nitride (SiNx) layers and then annealing under nitrogen N2. The characterization of these films was carried out by different techniques, scanning electron microscopy (SEM) to visualize morphological properties and (EDS) was used to determine the elemental composition of individual dots, optical analysis characterization of thin films was studied by a spectrophotometer in reflectance mode to determine different energies gap of the nanostructured layers and to adjust these values for the photovoltaic application.

Keywords: thin films, photovoltaic, rare earth, evaporation

Procedia PDF Downloads 75

Authors: Fang Liu, JiaJia Yao, GuanLin Wu, ZuMaoLi, XueYan Yang, HePeng Zhang, ZhiPeng Sun, JunShuai Xue

Abstract:

The explosive increasing needs of data processing and information storage strongly drive the advancement of the binary logic system to multiple-valued logic system. Inherent negative differential resistance characteristic, ultra-high-speed switching time, and robust anti-irradiation capability make III-nitride resonant tunneling diode one of the most promising candidates for multi-valued logic devices. Here we report the monolithic integration of GaN resonant tunneling diodes in series to realize multiple negative differential resistance regions, obtaining at least three stable operating states. A multiply-by-three circuit is achieved by this combination, increasing the frequency of the input triangular wave from f0 to 3f0. The resonant tunneling diodes are grown by plasma-assistedmolecular beam epitaxy on free-standing c-plane GaN substrates, comprising double barriers and a single quantum well both at the atomic level. Device with a peak current density of 183kA/cm² in conjunction with a peak-to-valley current ratio (PVCR) of 2.07 is observed, which is the best result reported in nitride-based resonant tunneling diodes. Microwave oscillation event at room temperature was discovered with a fundamental frequency of 0.31GHz and an output power of 5.37μW, verifying the high repeatability and robustness of our device. The switching behavior measurement was successfully carried out, featuring rise and fall times in the order of picoseconds, which can be used in high-speed digital circuits. Limited by the measuring equipment and the layer structure, the switching time can be further improved. In general, this article presents a novel nitride device with multiple negative differential regions driven by the resonant tunneling mechanism, which can be used in high-speed multiple value logic field with reduced circuit complexity, demonstrating a new solution of nitride devices to break through the limitations of binary logic.

Keywords: GaN resonant tunneling diode, negative differential resistance, multiple-valued logic system, switching time, peak-to-valley current ratio

Procedia PDF Downloads 90

Authors: Ali Dalirbod, Peyman Ahmadian

Abstract:

Inclusions are unavoidable part of all steels. Non-metallic inclusions have significant effects on mechanical properties of steel. The effects of inclusion on stress concentration around the matrix/inclusion have been extensively studied. The results relating to single inclusion behavior, describe properly the behavior of stress but not the elongation drop. The raised stress in inclusion/matrix results in crack initiation. The influence of binary inclusions on stress concentration around matrix is a major aim of this work which is representative of the simple pattern distribution of non-metallic inclusions. Stress concentration around inclusions in this case depends on parameters like distance between two inclusions (d), angle between centrally linking line of two inclusions, load axis (φ), and rotational angle of inclusion (θ). FEM analysis was applied to investigate the highest and lowest ductility versus varying parameters above. The simulation results show that there is a critical distance between two cubic inclusions in which bigger than the threshold, the stress, and strain field in matrix/inclusions interface converts into individual fields around each inclusion.

Keywords: nitride inclusion, simulation, tensile properties, inclusion-matrix interface

Procedia PDF Downloads 311

Authors: Nisha Prakash, Kritika Anand, Arun Barvat, Prabir Pal, Sonachand Adhikari, Suraj P. Khanna

Abstract:

Group-III nitride semiconductors (GaN, AlN, InN and their ternary and quaternary compounds) have attracted a great deal of attention for the development of high-performance Ultraviolet (UV) photodetectors. Any midgap defect states in the epitaxial grown film have a direct influence on the photodetectors responsivity. The proportion of the midgap defect states can be controlled by the growth parameters. To study this we have grown high quality epitaxial GaN films on MOCVD- grown GaN template using plasma-assisted molecular beam epitaxy (PAMBE) with different growth parameters. Optical and electrical properties of the films were characterized by room temperature photoluminescence and photoconductivity measurements, respectively. The observed persistent photoconductivity behaviour is proportional to the yellow luminescence (YL) and the absolute responsivity has been found to decrease with decreasing YL. The results will be discussed in more detail later.

Keywords: gallium nitride, plasma-assisted molecular beam epitaxy, photoluminescence, photoconductivity, persistent photoconductivity, yellow luminescence

Procedia PDF Downloads 311

Authors: Qiong Tian, Lifeng Zhang, Demei Yu, Ajit D. Kelkar

Abstract:

Low specific weight and high strength is the basic requirement for aerospace materials. Fiber-reinforced epoxy resin composites are attractive materials for this purpose. Boron nitride nanoparticles (BNNPs) have good radiation shielding capacity, which is very important to aerospace materials. Herein a processing route for an advanced hybrid composite material is demonstrated by introducing dispersed BNNPs in standard prepreg manufacturing. The hybrid materials contain three parts: E-fiberglass, an aerospace-grade epoxy resin system, and BNNPs. A vacuum assisted resin transfer molding (VARTM) was utilized in this processing. Two BNNP functionalization approaches are presented in this study: (a) covalent functionalization with 3-aminopropyltriethoxysilane (KH-550); (b) non-covalent functionalization with cetyltrimethylammonium bromide (CTAB). The functionalized BNNPs were characterized by Fourier-transform infrared spectroscopy (FT-IR), X-ray diffraction(XRD) and scanning electron microscope (SEM). The results showed that BN powder was successfully functionalized via the covalent and non-covalent approaches without any crystal structure change and big agglomerate particles were broken into platelet-like nanoparticles (BNNPs) after functionalization. Compared to pristine BN powder, surface modified BNNPs could result in significant improvement in mechanical properties such as tensile, flexural and compressive strength and modulus. CTAB functionalized BNNPs (CTAB-BNNPs) showed higher tensile and flexural strength but lower compressive strength than KH-550 functionalized BNNPs (KH550-BNNPs). These reinforcements are mainly attributed to good BNNPs dispersion and interfacial adhesion between epoxy matrix and BNNPs. This study reveals the potential in improving mechanical properties of BNNPs-containing composites laminates through surface functionalization of BNNPs.

Keywords: boron nitride, epoxy, functionalization, prepreg, composite

Procedia PDF Downloads 427

Authors: Jaroslaw Mizera, Pawel Wisniewski, Ryszard Sitek

Abstract:

Selective Laser Melting (SLM) is an advanced additive manufacturing technique used for producing parts made of wide range of materials such as: austenitic steel, titanium, nickel etc. In the our experiment we produced a Ti-AlN composite from a mixture of titanium and aluminum nitride respectively 70% at. and 30% at. using SLM technique. In order to define the size of powder particles, laser diffraction tests were performed on HORIBA LA-950 device. The microstructure and chemical composition of the composite was examined by Scanning Electron Microscopy (SEM). The chemical composition in micro areas of the obtained samples was determined by of EDS. The phase composition was analyzed by X-ray phase analysis (XRD). Microhardness Vickers tests were performed using Zwick/Roell microhardness machine under the load of 0.2kG (HV0.2). Hardness measurements were made along the building (xy) and along the plane of the lateral side of the cuboid (xz). The powder used for manufacturing of the samples had a mean particle size of 41μm. It was homogenous with a spherical shape. The specimens were built chiefly from Ti, TiN and AlN. The dendritic microstructure was porous and fine-grained. Some of the aluminum nitride remained unmelted but no porosity was observed in the interface. The formed material was characterized by high hardness exceeding 700 HV0.2 over the entire cross-section.

Keywords: Selective Laser Melting, Composite, SEM, microhardness

Procedia PDF Downloads 131

Authors: H. Bhuyan, S. Mändl, M. Favre, M. Cisternas, A. Henriquez, E. Wyndham, M. Walczak, D. Manova

Abstract:

The 470 Li-24 Cr and 460Li-21 Cr are two alloys belonging to the next generation of super-ferritic nickel free stainless steel grades, containing titanium (Ti), niobium (Nb) and small percentage of carbon (C) and nitrogen (N). The addition of Ti and Nb improves in general the corrosion resistance while the low interstitial content of C and N assures finer precipitates and greater ductility compared to conventional ferritic grades. These grades are considered an economic alternative to AISI 316L and 304 due to comparable or superior corrosion. However, since 316L and 304 can be nitrided to improve the mechanical surface properties like hardness and wear; it is hypothesize that the tribological properties of these super-ferritic stainless steels grades can also be improved by plasma nitriding. Thus two sets of plasma immersion ion implantation experiments have been carried out, one with a high pressure capacitively coupled radio frequency plasma at PUC Chile and the other using a low pressure microwave plasma at IOM Leipzig, in order to explore further improvements in the mechanical properties of 470 Li-24 Cr and 460Li-21 Cr steel. Nitrided and unnitrided substrates have been subsequently investigated using different surface characterization techniques including secondary ion mass spectroscopy, scanning electron microscopy, energy dispersive x-ray analysis, Vickers hardness, wear resistance, as well as corrosion test. In most of the characterizations no major differences have been observed for nitrided 470 Li-24 Cr and 460Li-21 Cr. Due to the ion bombardment, an increase in the surface roughness is observed for higher treatment temperature, independent of the steel types. The formation of chromium nitride compound takes place only at a treatment temperature around 4000C-4500C, or above. However, corrosion properties deteriorate after treatment at higher temperatures. The physical characterization results show up to 25 at.% of nitrogen for a diffusion zone of 4-6 m, and a 4-5 times increase in hardness for different experimental conditions. The samples implanted with temperature higher than 400 °C presented a wear resistance around two orders of magnitude higher than the untreated substrates. The hardness is apparently affected by the different roughness of the samples and their different profile of nitrogen.

Keywords: ion implantation, plasma, RF and microwave plasma, stainless steel

Procedia PDF Downloads 460

Authors: Fang Liu, JunShuai Xue, JiaJia Yao, GuanLin Wu, ZuMaoLi, XueYan Yang, HePeng Zhang, ZhiPeng Sun

Abstract:

Terahertz spectra is in great demand since last two decades for many photonic and electronic applications. III-Nitride resonant tunneling diode is one of the promising candidates for portable and compact THz sources. Room temperature microwave oscillator based on GaN/AlN resonant tunneling diode was reported in this work. The devices, grown by plasma-assisted molecular-beam epitaxy on free-standing c-plane GaN substrates, exhibit highly repeatable and robust negative differential resistance (NDR) characteristics at room temperature. To improve the interface quality at the active region in RTD, indium surfactant assisted growth is adopted to enhance the surface mobility of metal atoms on growing film front. Thanks to the lowered valley current associated with the suppression of threading dislocation scattering on low dislocation GaN substrate, a positive peak current density of record-high 2.1 MA/cm2 in conjunction with a peak-to-valley current ratio (PVCR) of 1.2 are obtained, which is the best results reported in nitride-based RTDs up to now considering the peak current density and PVCR values simultaneously. When biased within the NDR region, microwave oscillations are measured with a fundamental frequency of 0.31 GHz, yielding an output power of 5.37 µW. Impedance mismatch results in the limited output power and oscillation frequency described above. The actual measured intrinsic capacitance is only 30fF. Using a small-signal equivalent circuit model, the maximum intrinsic frequency of oscillation for these diodes is estimated to be ~260GHz. This work demonstrates a microwave oscillator based on resonant tunneling effect, which can meet the demands of terahertz spectral devices, more importantly providing guidance for the fabrication of the complex nitride terahertz and quantum effect devices.

Keywords: GaN resonant tunneling diode, peak current density, microwave oscillation, intrinsic capacitance

Procedia PDF Downloads 126

Authors: Junze Li, M. Li

Abstract:

Laser diodes fabricated from the III-nitride material system are emerging solutions for the next generation telecommunication systems and optical clocks based on Ca at 397nm, Rb at 420.2nm and Yb at 398.9nm combined 556 nm. Most of the applications require single longitudinal optical mode lasers, with very narrow linewidth and compact size, such as communication systems and laser cooling. In this case, the GaN based distributed feedback (DFB) laser diode is one of the most effective candidates with gratings are known to operate with narrow spectra as well as high power and efficiency. Given the wavelength range, the period of the first-order diffraction grating is under 100 nm, and the realization of such gratings is technically difficult due to the narrow line width and the high quality nitride overgrowth based on the Bragg grating. Some groups have reported GaN DFB lasers with high order distributed feedback surface gratings, which avoids the overgrowth. However, generally the strength of coupling is lower than that with Bragg grating embedded into the waveguide within the GaN laser structure by two-step-epitaxy. Therefore, the overgrowth on the grating technology need to be studied and optimized. Here we propose to fabricate the fine step shape structure of first-order grating by the nanoimprint combined inductively coupled plasma (ICP) dry etching, then carry out overgrowth high quality AlGaN film by metalorganic chemical vapor deposition (MOCVD). Then a series of gratings with different period, depths and duty ratios are designed and fabricated to study the influence of grating structure to the nano-heteroepitaxy. Moreover, we observe the nucleation and growth process by step-by-step growth to study the growth mode for nitride overgrowth on grating, under the condition that the grating period is larger than the mental migration length on the surface. The AFM images demonstrate that a smooth surface of AlGaN film is achieved with an average roughness of 0.20 nm over 3 × 3 μm2. The full width at half maximums (FWHMs) of the (002) reflections in the XRD rocking curves are 278 arcsec for the AlGaN film, and the component of the Al within the film is 8% according to the XRD mapping measurement, which is in accordance with design values. By observing the samples with growth time changing from 200s, 400s to 600s, the growth model is summarized as the follow steps: initially, the nucleation is evenly distributed on the grating structure, as the migration length of Al atoms is low; then, AlGaN growth alone with the grating top surface; finally, the AlGaN film formed by lateral growth. This work contributed to carrying out GaN DFB laser by fabricating grating and overgrowth on the nano-grating patterned substrate by wafer scale, moreover, growth dynamics had been analyzed as well.

Keywords: DFB laser, MOCVD, nanoepitaxy, III-niitride

Procedia PDF Downloads 174

Authors: Umran Kurtan, Hamide Aydin, Sevim Unugur Celik, Ayhan Bozkurt

Abstract:

In the present work, novel hBN/polyacrylonitrile composite nanofibers were produced via electrospinning approach and loaded with the electrolyte for rechargeable lithium-ion battery applications. The electrospun nanofibers comprising various hBN contents were characterized by using Fourier transform infrared spectroscopy (FT-IR), thermogravimetric analysis (TGA), X-ray diffraction (XRD) and scanning electron microscopy (SEM) techniques. The influence of hBN/PAN ratios onto the properties of the porous composite system, such as fiber diameter, porosity, and the liquid electrolyte uptake capability were systematically studied. Ionic conductivities and electrochemical characterizations were evaluated after loading electrospun hBN/PAN composite nanofiber with liquid electrolyte, i.e., 1 M lithium hexafluorophosphate (LiPF6) in ethylene carbonate (EC)/ethyl methyl carbonate (EMC) (1:1 vol). The electrolyte loaded nanofiber has a highest ionic conductivity of 10−3 S cm⁻¹ at room temperature. According to cyclic voltammetry (CV) results it exhibited a high electrochemical stability window up to 4.7 V versus Li+/Li. Li//10 wt% hBN/PAN//LiCO₂ cell was produced which delivered high discharge capacity of 144 mAhg⁻¹ and capacity retention of 92.4%. Considering high safety and low cost properties of the resulting hBN/PAN fiber electrolytes, these materials can be suggested as potential separator materials for lithium-ion batteries.

Keywords: hexagonal boron nitride, polyacrylonitrile, electrospinning, lithium ion battery

Procedia PDF Downloads 136

Authors: D. Geringswald, B. Hintze

Abstract:

The miniaturization of circuits is advancing. During chip manufacturing, structures are filled for example by metal organic chemical vapor deposition (MOCVD). Since this process reaches its limits in case of very high aspect ratios, the use of alternatives such as the atomic layer deposition (ALD) is possible, requiring the extension of existing coating systems. However, it is an unsolved question to what extent MOCVD can achieve results similar as an ALD process. In this context, this work addresses the characterization of a metal organic vapor deposition of titanium nitride. Based on the current state of the art, the film properties coating thickness, sheet resistance, resistivity, stress and chemical composition are considered. The used setting parameters are temperature, plasma gas ratio, plasma power, plasma treatment time, deposition time, deposition pressure, number of cycles and TDMAT flow. The derived process instructions for unstructured wafers and inside a structure with high aspect ratio include lowering the process temperature and increasing the number of cycles, the deposition and the plasma treatment time as well as the plasma gas ratio of hydrogen to nitrogen (H₂:N₂). In contrast to the current process configuration, the deposited titanium nitride (TiN) layer is more uniform inside the entire test structure. Consequently, this paper provides approaches to employ the MOCVD for structures with increasing aspect ratios.

Keywords: ALD, high aspect ratio, PE-MOCVD, TiN

Procedia PDF Downloads 294

Authors: Ashish Kumar, T. Venkatappa Rao, Subhendu Ray Chowdhury, S. V. S. Ramana Reddy

Abstract:

The main objective of this work is to determine the influence of electron beam irradiation on thermal and mechanical properties of Poly (lactic acid) (PLA)/Poly (ethylene-co-glycidyle methacrylate) (PEGM)/Hexagonal boron nitride (HBN) blend-composites. To reduce the brittleness and improve the toughness of PLA, the PLA/PEGM blend is prepared by using twin-screw Micro compounder. However, the heat deflection temperature (HDT) and other tensile properties were reduced. The HBN has been incorporated into the PLA/PEGM blend as part per hundred i.e. 5 phr and 10phr to improve the HDT. The prepared specimens of blend and blend-composites were irradiated to high energy (4.5 MeV) electron beam (E-beam) at different radiation doses to introduce the cross linking among the polymer chains and uniform dispersion of HBN particles in the PLA/PEGM/HBN blend-composites. The further improvement in the notched impact strength and HDT have been achieved in the case of PLA/PEGM/HBN blend-composites. The irradiated PLA/PEGM/HBN 5phr blend composite shows high notched impact strength and HDT as compared to other unirradiated and E-beam irradiated blend and blend-composites. The improvements in the yield strength and tensile modulus have also been noticed in the case of E-beam irradiated PLA/PEGM/HBN blend-composites as compared to unirradiated blend-composites.

Keywords: blend-composite, e-beam, HDT, PEGM, PLA

Procedia PDF Downloads 179

Authors: Wenyu Guo, Malachy O’Rourke, Mark Bowkett, Michael Gilchrist

Abstract:

Many devices for real-time monitoring of surface water have been developed in the past few years to provide early warning of pollutions and so to decrease the risk of environmental pollution efficiently. One of the most common methodologies used in the detection system is a colorimetric process, in which a container with fixed volume is filled with target ions and reagents to combine a colorimetric dye. The colorimetric ions can sensitively absorb a specific-wavelength radiation beam, and its absorbance rate is proportional to the concentration of the fully developed product, indicating the concentration of target nutrients in the pre-mixed water samples. In order to achieve precise and rapid detection effect, channels with dimensions in the order of micrometers, i.e., microfluidic systems have been developed and introduced into these diagnostics studies. Microfluidics technology largely reduces the surface to volume ratios and decrease the samples/reagents consumption significantly. However, species transport in such miniaturized channels is limited by the low Reynolds numbers in the regimes. Thus, the flow is extremely laminar state, and diffusion is the dominant mass transport process all over the regimes of the microfluidic channels. The objective of this present work has been to analyse the mixing effect and chemistry kinetics in a stop-flow microfluidic device measuring Nitride concentrations in fresh water samples. In order to improve the temporal resolution of the Nitride microfluidic sensor, we have used computational fluid dynamics to investigate the influence that the effectiveness of the mixing process between the sample and reagent within a microfluidic device exerts on the time to completion of the resulting chemical reaction. This computational approach has been complemented by physical experiments. The kinetics of the Griess reaction involving the conversion of sulphanilic acid to a diazonium salt by reaction with nitrite in acidic solution is set in the Laminar Finite-rate chemical reaction in the model. Initially, a methodology was developed to assess the degree of mixing of the sample and reagent within the device. This enabled different designs of the mixing channel to be compared, such as straight, square wave and serpentine geometries. Thereafter, the time to completion of the Griess reaction within a straight mixing channel device was modeled and the reaction time validated with experimental data. Further simulations have been done to compare the reaction time to effective mixing within straight, square wave and serpentine geometries. Results show that square wave channels can significantly improve the mixing effect and provides a low standard deviations of the concentrations of nitride and reagent, while for straight channel microfluidic patterns the corresponding values are 2-3 orders of magnitude greater, and consequently are less efficiently mixed. This has allowed us to design novel channel patterns of micro-mixers with more effective mixing that can be used to detect and monitor levels of nutrients present in water samples, in particular, Nitride. Future generations of water quality monitoring and diagnostic devices will easily exploit this technology.

Keywords: nitride detection, computational fluid dynamics, chemical kinetics, mixing effect

Procedia PDF Downloads 198

Authors: Padmalochan Panda, R. Ramaseshan

Abstract:

Aluminum nitride (AlN) is a potential candidate for semiconductor industry due to its wide band gap (6.2 eV), high thermal conductivity and low thermal coefficient of expansion. A-plane oriented AlN film finds an important role in deep UV-LED with higher isotropic light extraction efficiency. Also, Cr-doped AlN films exhibit dilute magnetic semiconductor property with high Curie temperature (300 K), and thus compatible with modern day microelectronics. In this work, highly a-axis oriented wurtzite AlN and Al1-xMxN (M = Cr, Ti) films have synthesized by reactive co-sputtering technique at different concentration. Crystal structure of these films is studied by Grazing incidence X-ray diffraction (GIXRD) and Transmission electron microscopy (TEM). Identification of binding energy and concentration (x) in these films is carried out by X-ray photoelectron spectroscopy (XPS). Local crystal structure around the Cr and Ti atom of these films are investigated by X-ray absorption spectroscopy (XAS). It is found that Cr and Ti replace the Al atom in AlN lattice and the bond lengths in first and second coordination sphere with N and Al, respectively, decrease concerning doping concentration due to strong p-d hybridization. The nano-indentation hardness of Cr and Ti-doped AlN films seems to increase from 17.5 GPa (AlN) to around 23 and 27.5 GPa, respectively. An-isotropic optical properties of these films are studied by the Spectroscopic Ellipsometry technique. Refractive index and extinction coefficient of these films are enhanced in normal dispersion region as compared to the parent AlN film. The optical band gap energies also seem to vary between deep UV to UV regions with the addition of Cr, thus by bringing out the usefulness of these films in the area of optoelectronic device applications.

Keywords: ellipsometry, GIXRD, hardness, XAS

Procedia PDF Downloads 108