Search results for: T. Wejrzanowski

Authors: Michał Maksimczuk, Łukasz Kaczmarek, Tomasz Wejrzanowski

Abstract:

This study concerns high-resolution X-ray computed microtomography (µCT) and ultrasonic pulse analysis of Cambrian sandstones from a borehole located in the Baltic Sea Coast of northern Poland. µCT and ultrasonic technique are non-destructive methods commonly used to determine the internal structure of reservoir rock sample. The spatial resolution of the µCT images obtained was 27 µm, which enabled the author to create accurate 3-D visualizations of structure geometry and to calculate the ratio of pores volume to the total sample volume. A copper X-ray source filter was used to reduce image artifacts. Furthermore, samples Young’s modulus and Poisson ratio were obtained with use of ultrasonic pulse technique. µCT and ultrasonic pulse technique provide complex information which can be used for explorations and characterization of reservoir rocks.

Keywords: elastic parameters, linear absorption coefficient, northern Poland, tight gas

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Authors: Ł. Kaczmarek, T. Wejrzanowski, M. Maksimczuk

Abstract:

The study presents the use of the numerical calculations based on high-resolution computed microtomography in analysis of fluid flow through Miocene sandstones. Therefore, the permeability studies of rocks were performed. Miocene samples were taken from well S-3, located in the eastern part of the Carpathian Foredeep. For aforementioned analysis, two series of X-ray irradiation were performed. The first set of samples was selected to obtain the spatial distribution of grains and pores. At this stage of the study length of voxel side amounted 27 microns. The next set of X-ray irradation enabled recognition of microstructural components as well as petrophysical features. The length of voxel side in this stage was up to 2 µm. Based on this study, the samples were broken down into two distinct groups. The first one represents conventional reservoir deposits, in opposite to second one - unconventional type. Appropriate identification of petrophysical parameters such as porosity and permeability of the formation is a key element for optimization of the reservoir development.

Keywords: grains, permeability, pores, pressure distribution

Procedia PDF Downloads 215

Authors: T. Wejrzanowski, M. Grybczuk, E. Tymicki, K. J. Kurzydlowski

Abstract:

In the present study, numerical simulations of heat and mass transfer in Physical Vapor Transport reactor during silicon carbide single crystal growth are addressed. Silicon carbide is a wide bandgap material with unique properties making it highly applicable for high power electronics applications. Because of high manufacturing costs improvements of SiC production process are required. In this study, numerical simulations were used as a tool of process optimization. Computer modeling allows for cost and time effective analysis of processes occurring during SiC single crystal growth and provides essential information needed for improvement of the process. Quantitative relationship between process conditions, such as temperature or pressure, and crystal growth rate and shape of crystallization front have been studied and verified using experimental data. Basing on modeling results, several process improvements were proposed and implemented.

Keywords: Finite Volume Method, semiconductors, Physica Vapor Transport, silicon carbide

Procedia PDF Downloads 466

Authors: Tomasz Wejrzanowski, Łukasz Kaczmarek, Michał Maksimczuk

Abstract:

High-resolution X-ray computed microtomography (µCT) is a non-destructive technique commonly used to determine the internal structure of reservoir rock sample. This study concerns µCT analysis of Silurian and Ordovician shales and mudstones from a borehole in the Baltic Basin, north of Poland. The spatial resolution of the µCT images obtained was 27 µm, which enabled the authors to create accurate 3-D visualizations and to calculate the ratio of pores and fractures volume to the total sample volume. A total of 1024 µCT slices were used to create a 3-D volume of sample structure geometry. These µCT slices were processed to obtain a clearly visible image and the volume ratio. A copper X-ray source filter was used to reduce image artifacts. Due to accurate technical settings of µCT it was possible to obtain high-resolution 3-D µCT images of low X-ray transparency samples. The presented results confirm the utility of µCT implementations in geoscience and show that µCT has still promising applications for reservoir exploration and characterization.

Keywords: fractures, material density, pores, structure

Procedia PDF Downloads 214

Authors: J. Skibinski, P. Caban, T. Wejrzanowski, K. J. Kurzydlowski

Abstract:

In the present study numerical simulations of epitaxial growth of gallium nitride in Metal Organic Vapor Phase Epitaxy reactor AIX-200/4RF-S are addressed. The aim of this study was to design the optimal fluid flow and thermal conditions for obtaining the most homogeneous product. Since there are many agents influencing reactions on the crystal growth area such as temperature, pressure, gas flow or reactor geometry, it is difficult to design optimal process. Variations of process pressure and hydrogen mass flow rates have been considered. According to the fact that it’s impossible to determine experimentally the exact distribution of heat and mass transfer inside the reactor during crystal growth, detailed 3D modeling has been used to get an insight of the process conditions. Numerical simulations allow to understand the epitaxial process by calculation of heat and mass transfer distribution during growth of gallium nitride. Including chemical reactions in the numerical model allows to calculate the growth rate of the substrate. The present approach has been applied to enhance the performance of AIX-200/4RF-S reactor.

Keywords: computational fluid dynamics, finite volume method, epitaxial growth, gallium nitride

Procedia PDF Downloads 422

Authors: T. Wejrzanowski, M. Grybczuk, E. Tymicki, K. J. Kurzydlowski

Abstract:

In the present study numerical simulations silicon carbide single crystal growth process in Physical Vapor Transport reactor are addressed. Silicon Carbide is a perspective material for many applications in modern electronics. One of the main challenges for wider applications of SiC is high price of high quality mono crystals. Improvement of silicon carbide manufacturing process has a significant influence on the product price. Better understanding of crystal growth allows for optimization of the process, and it can be achieved by numerical simulations. In this work Virtual Reactor software was used to simulate the process. Predicted geometrical properties of the final product and information about phenomena occurring inside process reactor were obtained. The latter is especially valuable because reactor chamber is inaccessible during the process due to high temperature inside the reactor (over 2000˚C). Obtained data was used for improvement of the process and reactor geometry. Resultant crystal quality was also predicted basing on crystallization front shape evolution and threading dislocation paths. Obtained results were confronted with experimental data and the results are in good agreement.

Keywords: Finite Volume Method, semiconductors, Physical Vapor Transport, silicon carbide

Procedia PDF Downloads 498

Authors: J. Skibinski, P. Caban, T. Wejrzanowski, K. J. Kurzydlowski

Abstract:

In the present study, numerical simulations of heat and mass transfer during gallium nitride growth process in Metal Organic Vapor Phase Epitaxy reactor AIX-200/4RF-S is addressed. Existing knowledge about phenomena occurring in the MOVPE process allows to produce high quality nitride based semiconductors. However, process parameters of MOVPE reactors can vary in certain ranges. Main goal of this study is optimization of the process and improvement of the quality of obtained crystal. In order to investigate this subject a series of computer simulations have been performed. Numerical simulations of heat and mass transfer in GaN epitaxial growth process have been performed to determine growth rate for various mass flow rates and pressures of reagents. According to the fact that it’s impossible to determine experimentally the exact distribution of heat and mass transfer inside the reactor during the process, modeling is the only solution to understand the process precisely. Main heat transfer mechanisms during MOVPE process are convection and radiation. Correlation of modeling results with the experiment allows to determine optimal process parameters for obtaining crystals of highest quality.

Keywords: Finite Volume Method, semiconductors, epitaxial growth, metalorganic vapor phase epitaxy, gallium nitride

Procedia PDF Downloads 361