Search results for: low voltage trigger silicon controlled rectifier (LVTSCR)

Authors: Binh T. T. Nguyen, Zhenyu Li, Eric Yap, Yi Zhang, Ai-Qun Liu

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Silicon-photonic-sensor system is an emerging class of analytical technologies that use evanescent field wave to sensitively measure the slight difference in the surrounding environment. The wavelength shift induced by local refractive index change is used as an indicator in the system. These devices can be served as sensors for a wide variety of chemical or biomolecular detection in clinical and environmental fields. In our study, a system including a silicon-based micro-ring resonator, microfluidic channel, and optical processing is designed, fabricated for biomolecule detection. The system is demonstrated to detect Clostridium botulinum type A neurotoxin (BoNT) in different water sources. BoNT is one of the most toxic substances known and relatively easily obtained from a cultured bacteria source. The toxin is extremely lethal with LD50 of about 0.1µg/70kg intravenously, 1µg/ 70 kg by inhalation, and 70µg/kg orally. These factors make botulinum neurotoxins primary candidates as bioterrorism or biothreat agents. It is required to have a sensing system which can detect BoNT in a short time, high sensitive and automatic. For BoNT detection, silicon-based micro-ring resonator is modified with a linker for the immobilization of the anti-botulinum capture antibody. The enzymatic reaction is employed to increase the signal hence gains sensitivity. As a result, a detection limit to 30 pg/mL is achieved by our silicon-photonic sensor within a short period of 80 min. The sensor also shows high specificity versus the other type of botulinum. In the future, by designing the multifunctional waveguide array with fully automatic control system, it is simple to simultaneously detect multi-biomaterials at a low concentration within a short period. The system has a great potential to apply for online, real-time and high sensitivity for the label-free bimolecular rapid detection.

Keywords: biotoxin, photonic, ring resonator, sensor

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Authors: Xuerui Niu, Bolin Wang, Xinchuang Zhang, Xiaohua Ma, Bin Hou, Ling Yang

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The application of discrete GaN-based power switches requires the collaboration of silicon-based peripheral circuit structures. However, the packages and interconnection between the Si and GaN devices can introduce parasitic effects to the circuit, which has great impacts on GaN power transistors. GaN-based monolithic power integration technology is an emerging solution which can improve the stability of circuits and allow the GaN-based devices to achieve more functions. Complementary logic circuits consisting of GaN-based E-mode p-channel heterostructure field-effect transistors (p-HFETs) and E-mode n-channel HEMTs can be served as the gate drivers. E-mode p-HFETs with recessed gate have attracted increasing interest because of the low leakage current and large gate swing. However, they suffer from a poor interface between the gate dielectric and polarized nitride layers. The reliability of p-HFETs is analyzed and discussed in this work. In circuit applications, the inverter is always operated with dynamic gate voltage (VGS) rather than a constant VGS. Therefore, dynamic electrical stress has been simulated to resemble the operation conditions for E-mode p-HFETs. The dynamic electrical stress condition is as follows. VGS is a square waveform switching from -5 V to 0 V, VDS is fixed, and the source grounded. The frequency of the square waveform is 100kHz with the rising/falling time of 100 ns and duty ratio of 50%. The effective stress time is 1000s. A number of stress tests are carried out. The stress was briefly interrupted to measure the linear IDS-VGS, saturation IDS-VGS, As VGS switches from -5 V to 0 V and VDS = 0 V, devices are under negative-bias-instability (NBI) condition. Holes are trapped at the interface of oxide layer and GaN channel layer, which results in the reduction of VTH. The negative shift of VTH is serious at the first 10s and then changes slightly with the following stress time. However, different phenomenon is observed when VDS reduces to -5V. VTH shifts negatively during stress condition, and the variation in VTH increases with time, which is different from that when VDS is 0V. Two mechanisms exists in this condition. On the one hand, the electric field in the gate region is influenced by the drain voltage, so that the trapping behavior of holes in the gate region changes. The impact of the gate voltage is weakened. On the other hand, large drain voltage can induce the hot holes generation and lead to serious hot carrier stress (HCS) degradation with time. The poor-quality interface between the oxide layer and GaN channel layer at the gate region makes a major contribution to the high-density interface traps, which will greatly influence the reliability of devices. These results emphasize that the improved etching and pretreatment processes needs to be developed so that high-performance GaN complementary logics with enhanced stability can be achieved.

Keywords: GaN-based E-mode p-HFETs, dynamic electric stress, threshold voltage, monolithic power integration technology

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Authors: A. Suresh, Sreehari Rao Patri, K. S. R. Krishnaprasad

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An ultra low power capacitor less low-dropout voltage regulator with improved transient response using gain enhanced feed forward path compensation is presented in this paper. It is based on a cascade of a voltage amplifier and a transconductor stage in the feed forward path with regular error amplifier to form a composite gain-enhanced feed forward stage. It broadens the gain bandwidth and thus improves the transient response without substantial increase in power consumption. The proposed LDO, designed for a maximum output current of 100 mA in UMC 180 nm, requires a quiescent current of 69 µA. An undershoot of 153.79mV for a load current changes from 0mA to 100mA and an overshoot of 196.24mV for current change of 100mA to 0mA. The settling time is approximately 1.1 µs for the output voltage undershoot case. The load regulation is of 2.77 µV/mA at load current of 100mA. Reference voltage is generated by using an accurate band gap reference circuit of 0.8V.The costly features of SOC such as total chip area and power consumption is drastically reduced by the use of only a total compensation capacitance of 6pF while consuming power consumption of 0.096 mW.

Keywords: capacitor-less LDO, frequency compensation, transient response, latch, self-biased differential amplifier

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Authors: Saja M. Nabat Al-Ajrash, Charles Browning, Rose Eckerle, Li Cao

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A process that utilizes a combination of additive manufacturing (AM), a preceramic polymer, and a chopped carbon fiber precursorto fabricate Silicon Carbon/ Carbon fibers (SiC/C) composites have been developed. The study has shown a promising, cost-effective, and efficient route to fabricate complex SiC/C composites using additive manufacturing. A key part of this effort was the mapping of the material’s microstructure through the thickness of the composite. Microstructural features in the pyrolyzed composites through the successive AM layers, such as defects, crystal size and their distribution, interatomic spacing, chemical bonds, were investigated using high-resolution scanning and transmission electron microscopy. As a result, the microstructure developed in SiC/C composites after printing, cure, and pyrolysis has been successfully mapped through the thickness of the derived composites. Dense and nearly defect-free parts after polymer to ceramic conversion were observed. The ceramic matrix composite displayed three coexisting phases, including silicon carbide, silicon oxycarbide, and turbostratic carbon. Lattice fringes imaging and X-Ray Diffraction analysis showed well-defined SiC and turbostratic carbon features. The cross-sectional mapping of the printed-then-pyrolyzed structures has confirmed consistent structural and chemical features within the internal layers of the AM parts. Noteworthy, however, is that a crust-like area with high crystallinity has been observed in the first and last external layers. Not only do these crust-like regions have structural characteristics distinct from the internal layers, but they also have elemental distributions different than the internal layers.

Keywords: SiC, preceramic polymer, additive manufacturing, ceramic

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Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

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Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, kink effect

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Authors: Sefiu A. Bello, Nasirudeen K. Raji, Jeleel A. Adebisi, Sadiq A. Raji

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Pure metals are not used in most cases for structural applications because of their limited properties. Presently, high entropy alloys (HEAs) are emerging by mixing comparative proportions of metals with the aim of maximizing the entropy leading to enhancement in structural and mechanical properties. Aluminum Silicon Nickel Iron Vanadium (AlSiNiFeV) alloy was developed using stir cast technique and analysed. Results obtained show that the alloy grade G0 contains 44 percentage by weight (wt%) Al, 32 wt% Si, 9 wt% Ni, 4 wt% Fe, 3 wt% V and 8 wt% for minor elements with tensile strength and elongation of 106 Nmm^-2 and 2.68%, respectively. X-ray diffraction confirmed intermetallic compounds having hexagonal closed packed (HCP), orthorhombic and cubic structures in cubic dendritic matrix. This affirmed transformation from the cubic structures of elemental constituents of the HEAs to the precipitated structures of the intermetallic compounds. A maximum tensile strength of 188 Nmm^-2 with 4% elongation was noticed at 10wt% of silica addition to the G0. An increase in tensile strength with an increment in silica content could be attributed to different phases and crystal geometries characterizing each HEA.

Keywords: HEAs, phases model, aluminium, silicon, tensile strength, model

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Authors: Hwan Su Jung, Ahn Jun Gil, Jong Tae Kim

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Power management techniques are necessary to save power in the microprocessor. By changing the frequency and/or operating voltage of processor, DVFS can control power consumption. In this paper, we perform a case study to find optimal power state transition for DVFS. We propose the equation to find the optimal ratio between executions of states while taking into account the deadline of processing time and the power state transition delay overhead. The experiment is performed on the Cortex-M4 processor, and average 6.5% power saving is observed when DVFS is applied under the deadline condition.

Keywords: deadline, dynamic voltage frequency scaling, power state transition

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Authors: Karima Benfadel, Lamia Talbi, Sabiha Anas Boussaa, Afaf Brik, Assia Boukezzata, Yahia Ouadah, Samira Kaci

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In order to prevent global warming, which is mainly caused by the increase in carbon dioxide levels in the atmosphere, it is interesting to produce renewable energy in the form of chemical energy by converting carbon dioxide into alternative fuels and other energy-dense products. Photoelectrochemical reduction of carbon dioxide to value-added products and fuels is a promising and current method. The objective of our study is to develop Cu₂S-based photoélectrodes, in which Cu₂S is used as a CO₂ photoelectrocatalyst deposited on nanostructured silicon substrates. Cu₂S thin layers were deposited using the chemical bath deposition (CBD) technique. Silicon nanowires and nanopyramids were obtained by alkaline etching. SEM and UV-visible spectroscopy was used to analyse the morphology and optical characteristics. By using a potentiostat station, we characterized the photoelectrochemical properties. We performed cyclic voltammetry in the presence and without CO₂ purging as well as linear voltammetry (LSV) in the dark and under white light irradiation. We perform chronoamperometry to study the stability of our photocathodes. The quality of the nanowires and nanopyramids was visible in the SEM images, and after Cu₂S deposition, we could see how the deposition was distributed over the textured surfaces. The inclusion of the Cu₂S layer applied on textured substrates significantly reduces the reflectance (R%). The catalytic performance towards CO₂ conversion of Cu₂S/Si-based photocathodes revealed that the texturing of the silicon surface with nanowires and pyramids has a better photoelectrochemical behavior than those without surface modifications.

Keywords: CO₂ conversion, Cu₂S photocathode, silicone nanostructured, electrochemistry

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Authors: Ghazi Al Sukkar, Yazid Khattabi, Shifen Zhong

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Most of the recent wireless LANs, broadband access networks, and digital broadcasting use Orthogonal Frequency Division Multiplexing techniques. In addition, the increasing demand of Data and Internet makes fiber optics an important technology, as fiber optics has many characteristics that make it the best solution for transferring huge frames of Data from a point to another. Radio over fiber is the place where high quality RF is converted to optical signals over single mode fiber. Optimum values for the bias level and the switching voltage for Mach-Zehnder modulator are important for the performance of radio over fiber links. In this paper, we propose a method to optimize the two parameters simultaneously; the bias and the switching voltage point of the external modulator of a radio over fiber system considering RF gain. Simulation results show the optimum gain value under these two parameters.

Keywords: OFDM, Mach Zehnder bias voltage, switching voltage, radio-over-fiber, RF gain

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Authors: Ali Kadivar, Kaveh Niayesh

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MVDC markets for green power generations, Navy, subsea oil and gas electrification, and transportation electrification are extending rapidly. The lack of fast and powerful DC circuit breakers (CB) is the most significant barrier to realizing the medium voltage DC (MVDC) networks. A concept of hybrid circuit breakers (HCBs) benefiting from ultrafast disconnectors (UFD) is proposed. A set of mechanical switches substitute the power electronic commutation switches to reduce the losses during normal operation in HCB. The success of current commutation in such breakers relies on the behaviour of elongated, wall constricted arcs during the opening across the contacts inside the UFD. The arc voltage dependencies on the contact speed of UFDs is discussed through multiphysics simulations contact opening speeds of 10, 20 and 40 m/s. The arc voltage at a given current increases exponentially with the contact opening velocity. An empirical equation for the dynamic arc characteristics is presented for the tested UFD, and the experimentally verfied characteristics for voltage-current are utilized for the current commutation simulation prior to apply on a 14 kV experimental setup. Different failures scenarios due to the current commutation are investigated

Keywords: MVDC breakers, DC circuit breaker, fast operating breaker, ultra-fast elongated arc

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Authors: A. C. Sarmah

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The Al-MoO3-P-CdTe-Al MOS sandwich structures were fabricated by vacuum deposition method on cleaned glass substrates. Capacitance versus voltage measurements were performed at different frequencies and sweep rates of applied voltages for oxide and semiconductor films of different thicknesses. In the negative voltage region of the C-V curve a high differential capacitance of the semiconductor was observed and at high frequencies (<10 kHz) the transition from accumulation to depletion and further to deep depletion was observed as the voltage was swept from negative to positive. A study have been undertaken to determine the value of acceptor density and some depletion layer parameters such as depletion layer capacitance, depletion width, impurity concentration, flat band voltage, Debye length, flat band capacitance, diffusion or built-in-potential, space charge per unit area etc. These were determined from C-V measurements for different oxide and semiconductor thicknesses.

Keywords: debye length, depletion width, flat band capacitance, impurity concentration

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Authors: Ajibola O. Akinrinde, Andrew Swanson, Remy Tiako

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There exist significant losses on transmission lines due to distance, as power generating stations could be located far from some isolated settlements. Standalone wind farms could be a good choice of alternative power generation for such settlements that are far from the grid due to factors of long distance or socio-economic problems. However, uncompensated wind farms consume reactive power since wind turbines are induction generators. Therefore, capacitor banks are used to compensate reactive power, which in turn improves the voltage profile of the network. Although capacitor banks help improving voltage profile, they also undergo switching actions due to its compensating response to the variation of various types of load at the consumer’s end. These switching activities could cause transient overvoltage on the network, jeopardizing the end-life of other equipment on the system. In this paper, the overvoltage caused by these switching activities is investigated using the IEEE bus 14-network to represent a standalone wind farm, and the simulation is done using ATP/EMTP software. Scenarios involving the use of pre-insertion resistor and pre-insertion inductor, as well as controlled switching was also carried out in order to decide the best mitigation option to reduce the overvoltage.

Keywords: capacitor banks, IEEE bus 14-network, pre-insertion resistor, standalone wind farm

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Authors: Ha Thi Nguyen, Guangya Yang, Arne Hejde Nielsen, Peter Højgaard Jensen

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Automatic voltage regulator (AVR) plays an important role in volt/var control of synchronous condenser (SC) in power systems. Test AVR performance in steady-state and dynamic conditions in real grid is expensive, low efficiency, and hard to achieve. To address this issue, we implement hardware-in-the-loop (HiL) test for the AVR of SC to test the steady-state and dynamic performances of AVR in different operating conditions. Startup procedure of the system and voltage set point changes are studied to evaluate the AVR hardware response. Overexcitation, underexcitation, and AVR set point loss are tested to compare the performance of SC with the AVR hardware and that of simulation. The comparative results demonstrate how AVR will work in a real system. The results show HiL test is an effective approach for testing devices before deployment and is able to parameterize the controller with lower cost, higher efficiency, and more flexibility.

Keywords: automatic voltage regulator, hardware-in-the-loop, synchronous condenser, real time digital simulator

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Authors: Vahid Rashtchi, Ashkan Pirooz

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This paper applies the Imperialist Competitive Algorithm (ICA) to find the optimal place and size of Static Compensator (STATCOM) in power systems. The output of the algorithm is a two dimensional array which indicates the best bus number and STATCOM's optimal size that minimizes all bus voltage deviations from their nominal value. Simulations are performed on IEEE 5, 14, and 30 bus test systems. Also some comparisons have been done between ICA and the famous Particle Swarm Optimization (PSO) algorithm. Results show that how this method can be considered as one of the most precise evolutionary methods for the use of optimum compensator placement in electrical grids.

Keywords: evolutionary computation, imperialist competitive algorithm, power systems compensation, static compensators, voltage profile

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Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

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In this paper, an improved active snubber cell is proposed on account of soft switching (SS) family of pulse width modulation (PWM) DC-DC converters. The improved snubber cell provides zero-voltage transition (ZVT) turn on and zero-current transition (ZCT) turn off for main switch. The snubber cell decreases EMI noise and operates with SS in a wide range of line and load voltages. Besides, all of the semiconductor devices in the converter operate with SS. There is no additional voltage and current stress on the main devices. Additionally, extra voltage stress does not occur on the auxiliary switch and its current stress is acceptable value. The improved converter has a low cost and simple structure. The theoretical analysis of converter is clarified and the operating states are given in detail. The experimental results of converter are obtained by prototype of 500 W and 100 kHz. It is observed that the experimental results and theoretical analysis of converter are suitable with each other perfectly.

Keywords: active snubber cells, DC-DC converters, zero-voltage transition, zero-current transition

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Authors: Sana Ansari, Sirus Mohammadi

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In distribution systems, shunt capacitors are used to reduce power losses, to improve voltage profile, and to increase the maximum flow through cables and transformers. This paper presents a new method to determine the optimal locations and economical sizing of fixed and/or switched shunt capacitors with a view to power losses reduction and voltage stability enhancement. General Algebraic Modeling System (GAMS) has been used to solve the maximization modules using the MINOS optimization software with Linear Programming (LP). The proposed method is tested on 33 node distribution system and the results show that the algorithm suitable for practical implementation on real systems with any size.

Keywords: power losses, voltage stability, radial distribution systems, capacitor

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Authors: H. Rezvani, H. Monsef, A. Hekmati

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Nowadays, the use of renewable energy sources has been increasingly great because of the cost increase and public demand for clean energy sources. One of the fastest growing sources is wind energy. In this paper, Wind Diesel Hybrid System (WDHS) comprising a Diesel Generator (DG), a Wind Turbine Generator (WTG), the Consumer Load, a Battery-based Energy Storage System (BESS), and a Dump Load (DL) is used. Voltage is controlled by Diesel Generator; the frequency is controlled by BESS and DL. The BESS elimination is an efficient way to reduce maintenance cost and increase the dynamic response. Simulation results with graphs for the frequency of Power System, active power, and the battery power are presented for load changes. The controlling parameters are optimized by using Imperialist Competitive Algorithm (ICA). The simulation results for the BESS/no BESS cases are compared. Results show that in no BESS case, the frequency control is more optimal than the BESS case by using ICA.

Keywords: renewable energy, wind diesel system, induction generator, energy storage, imperialist competitive algorithm

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Authors: L. Matlawe, E. S. Idemudia

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The stability is an important topic to plan and manage the energy in the microgrids as the same as the conventional power systems. The voltage and frequency stability is one of the most important issues recently studied in microgrids. The objectives of this paper are the modeling and designing of the components and optimal controllers for the voltage and frequency control of the AC/DC hybrid microgrid under the different disturbances. Since the PI controllers have the advantages of simple structure and easy implementation, so they were designed and modeled in this paper. The harmony search (HS) algorithm is used to optimize the controllers’ parameters. According to the achieved results, the PI controllers have a good performance in voltage and frequency control of the microgrid.

Keywords: emotional abuse, employees, mental health, self-concept

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Authors: A. Kojah, A. Nacaroğlu

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Single phase transmission lines are used to transfer data or energy between two users. Transient conditions such as switching operations and short circuit faults cause the generation of the fluctuation on the waveform to be transmitted. Spatial voltage distribution on the single phase transmission line may change owing to the position and duration of the short circuit fault in the system. In this paper, the state space representation of the single phase transmission line for short circuit fault and for various types of terminations is given. Since the transmission line is modeled in time domain using distributed parametric elements, the mathematical representation of the event is given in state space (time domain) differential equation form. It also makes easy to solve the problem because of the time and space dependent characteristics of the voltage variations on the distributed parametrically modeled transmission line.

Keywords: energy transmission, transient effects, transmission line, transient voltage, RLC short circuit, single phase

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Authors: N.Revathy, C.Gomathi

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This work aims for a tunable capacitor as a sensor which can vary the control voltage of a voltage control oscillator in a ultra wide band (UWB) transmitter. In this paper power consumption is concentrated. The reason for choosing a capacitive sensing is it give slow temperature drift, high sensitivity and robustness. Previous works report a resistive sensing in a voltage control oscillator (VCO) not aiming at power consumption. But this work aims for power consumption of a capacitive sensing in ultra wide band transmitter. The ultra wide band transmitter to be used is a direct modulation of pulses. The VCO which is the heart of pulse generator of UWB transmitter works on the principle of voltage to frequency conversion. The VCO has and odd number of inverter stages which works on the control voltage input this input is now from a variable capacitor and the buffer stages is reduced from the previous work to maintain the oscillating frequency. The VCO is also aimed to consume low power. Then the concentration in choosing a variable capacitor is aimed. A compact model of a capacitor with the transient characteristics is to be designed with a movable dielectric and multi metal membranes. Previous modeling of the capacitor transient characteristics is with a movable membrane and a fixed membrane. This work aims at a membrane with a wide tuning suitable for ultra wide band transmitter.This is used in this work because a capacitive in a ultra wide transmitter need to be tuned in such a way that all satisfies FCC regulations.

Keywords: capacitive sensing, ultra wide band transmitter, voltage control oscillator, FCC regulation

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Authors: Mauludi Ariesto Pamungkas, Wafa Maftuhin

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Gallium with three outer electrons commonly are used as dopants of silicon to make it P type and N type semiconductor respectively. Silicene, one-atom-thick silicon layer is one of emerging two dimension materials after the success of graphene. The effects of Gallium doping on electronic structure of silicine are investigated by using first principle calculation based on Density Functional Theory (DFT) calculation and norm conserving pseudopotential method implemented in ABINIT code. Bandstructure of Pristine silicene is similar to that of graphene. Effect of Ga doping on bandstructure of silicene depend on the position of Ga adatom on silicene

Keywords: silicene, effects of Gallium doping, Density Functional Theory (DFT), graphene

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Authors: Saif Alomari

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The paper aims at giving physical and mathematical descriptions of how the structural parameters of a resonant tunnelling diode (RTD) affect its output characteristics. Specifically, the value of the peak voltage, peak current, peak to valley current ratio (PVCR), and the difference between peak and valley voltages and currents ΔV and ΔI. A simulation-based approach using the Non-Equilibrium Green Function (NEGF) formalism based on the Silvaco ATLAS simulator is employed to conduct a series of designed experiments. These experiments show how the doping concentration in the emitter and collector layers, their thicknesses, and the width of the barriers and the quantum well influence the above-mentioned output characteristics. Each of these parameters was systematically changed while holding others fixed in each set of experiments. Factorial experiments are outside the scope of this work and will be investigated in future. The physics involved in the operation of the device is thoroughly explained and mathematical models based on curve fitting and underlaying physical principles are deduced. The models can be used to design devices with predictable output characteristics. These models were found absent in the literature that the author acanned. Results show that the doping concentration in each region has an effect on the value of the peak voltage. It is found that increasing the carrier concentration in the collector region shifts the peak to lower values, whereas increasing it in the emitter shifts the peak to higher values. In the collector’s case, the shift is either controlled by the built-in potential resulting from the concentration gradient or the conductivity enhancement in the collector. The shift to higher voltages is found to be also related to the location of the Fermi-level. The thicknesses of these layers play a role in the location of the peak as well. It was found that increasing the thickness of each region shifts the peak to higher values until a specific characteristic length, afterwards the peak becomes independent of the thickness. Finally, it is shown that the thickness of the barriers can be optimized for a particular well width to produce the highest PVCR or the highest ΔV and ΔI. The location of the peak voltage is important in optoelectronic applications of RTDs where the operating point of the device is usually the peak voltage point. Furthermore, the PVCR, ΔV, and ΔI are of great importance for building RTD-based oscillators as they affect the frequency response and output power of the oscillator.

Keywords: peak to valley ratio, peak voltage shift, resonant tunneling diodes, structural parameters

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Authors: Pankaj Negi

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Nowadays the demand for receiving the high quality electrical energy is being increasing as consumer wants not only reliable but also quality power. Custom power instruments are of the most well-known compensators of power quality in distributed network. This paper present a comprehensive review of compensating custom power devices mainly DSTATCOM (distribution static compensator),DVR (dynamic voltage restorer), and UPQC (unified power quality compensator) and also deals with sliding mode control and its applications to custom power devices. The sliding mode control strategy provides robustness to custom power device and enhances the dynamic response for compensating voltage sag, swell, voltage flicker, and voltage harmonics. The aim of this paper is to provide a broad perspective on the status of compensating devices in electric power distribution system and sliding mode control strategies to researchers and application engineers who are dealing with power quality and stability issues.

Keywords: active power filters(APF), custom power device(CPD), DSTATCOM, DVR, UPQC, sliding mode control (SMC), power quality

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Authors: Jianwen Li, Hongfang Ma, Weixin Qian, Haitao Zhang, Weiyong Ying

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Methanol-to-propylene conversion was carried out in a continuous-flow fixed-bed reactor over nano-sized HZSM-5 zeolites. The HZSM-5 catalysts were synthesized with different Si/Al ratio and silicon sources, and treated with NaOH. The structural property, morphology, and acidity of catalysts were measured by XRD, N₂ adsorption, FE-SEM, TEM, and NH₃-TPD. The results indicate that the increment of Si/Al ratio decreased the acidity of catalysts and then improved propylene selectivity, while silicon sources had slight impact on the acidity but affected the product distribution. The desilication after alkali treatment could increase intracrystalline mesopores and enhance propylene selectivity.

Keywords: alkali treatment, HZSM-5, methanol-to-propylene, synthesis condition

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Authors: Riyad Awad, Abdulmohsen Alghadeer, Meshari Otaibi

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Proper operation and maintenance (O&M) activities of high voltage equipment can lead to an increased asset lifecycle and maintain its integrity and reliability. Such a vital process is important to be proactively considered during equipment design and manufacturing phases by removing and eliminating any obstacles in the equipment which adversely affect the (O&M) activities. This paper presents a gap analysis pertaining to difficulties in performing operations and maintenance (O&M) high voltage electrical equipment, includes power transformers, switch gears, motor control center, disconnect switches and circuit breakers. The difficulties are gathered from field personnel, equipment design review comments, quality management system, and lessons learned database. The purpose of the gap analysis is to mitigate and prevent the (O&M) difficulties as early as possible in the design stage of the equipment lifecycle. The paper concludes with several recommendations and corrective actions for all identified gaps in order to reduce the cost (O&M) difficulties and improve the equipment lifecycle.

Keywords: operation and maintenance, high voltage equipment, equipment lifecycle, reduce the cost of maintenance

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Authors: Zainab Almukhtar, Adel Merabet

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In this paper, a method for maximum power point tracking of a photovoltaic energy conversion system is presented. This method is based on using the difference between the power from the solar panel and an estimated power value to control the DC-DC converter of the photovoltaic system. The difference is continuously compared with a preset error permitted value. If the power difference is more than the error, the estimated power is multiplied by a factor and the operation is repeated until the difference is less or equal to the threshold error. The difference in power will be used to trigger a DC-DC boost converter in order to raise the voltage to where the maximum power point is achieved. The proposed method was experimentally verified through a PV energy conversion system driven by the OPAL-RT real time controller. The method was tested on varying radiation conditions and load requirements, and the Photovoltaic Panel was operated at its maximum power in different conditions of irradiation.

Keywords: control system, error, solar panel, MPPT tracking

Procedia PDF Downloads 253

Authors: Najiya Omar, Hamed Aly, Timothy Little

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The optimal size of a photovoltaic (PV) array is considered a critical factor in designing an efficient PV system due to the dependence of the PV cell performance on temperature. A high temperature can lead to voltage losses of solar panels, whereas a low temperature can cause voltage overproduction. There are two possible scenarios of the inverter’s operation in which they are associated with the erroneous calculations of the number of PV panels: 1) If the number of the panels is scant and the temperature is high, the minimum voltage required to operate the inverter will not be reached. As a result, the inverter will shut down. 2) Comparably, if the number of panels is excessive and the temperature is low, the produced voltage will be more than the maximum limit of the inverter which can cause the inverter to get disconnected or even damaged. This article aims to assess theoretical and practical methodologies to calculate size and determine the topology of a PV array. The results are validated by applying an experimental evaluation for a 100 kW Grid-connected PV system for a location in Halifax, Nova Scotia and achieving a satisfactory system performance compared to the previous work done.

Keywords: sizing PV panels, theoretical and practical methodologies, topology of PV array, grid-connected PV

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Authors: Ismail Aksoy, Haci Bodur, Nihan Altintaş

Abstract:

This paper introduces a boost converter with a new active snubber cell. In this circuit, all of the semiconductor components in the converter softly turns on and turns off with the help of the active snubber cell. Compared to the other converters, the proposed converter has advantages of size, number of components and cost. The main feature of proposed converter is that the extra voltage stresses do not occur on the main switches and main diodes. Also, the current stress on the main switch is acceptable level. Moreover, the proposed converter can operates under light load conditions and wide input line voltage. In this study, the operating principle of the proposed converter is presented and its operation is verified with the Proteus simulation software for a 1 kW and 100 kHz model.

Keywords: active snubber cell, boost converter, zero current switching, zero voltage switching

Procedia PDF Downloads 1008

Authors: Jan Doutreloigne

Abstract:

This paper describes two methods for the reduction of the peak input current during the boosting of Dickson charge pumps. Both methods are implemented in the fully integrated Dickson charge pumps of a high-voltage display driver chip for smart-card applications. Experimental results reveal good correspondence with Spice simulations and show a reduction of the peak input current by a factor of 6 during boosting

Keywords: bi-stable display driver, Dickson charge pump, high-voltage generator, peak current reduction, sub-pump boosting, variable frequency boosting

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Authors: Naim Suleyman Ting, Yakup Sahin, Ismail Aksoy

Abstract:

This paper presents a zero voltage transition-zero current transition (ZVT-ZCT)-PWM DC-DC boost converter with direct power transfer. In this converter, the main switch turns on with ZVT and turns off with ZCT. The auxiliary switch turns on and off with zero current switching (ZCS). The main diode turns on with ZVS and turns off with ZCS. Besides, the additional current or voltage stress does not occur on the main device. The converter has features as simple structure, fast dynamic response and easy control. Also, the proposed converter has direct power transfer feature as well as excellent soft switching techniques. In this study, the operating principle of the converter is presented and its operation is verified for 1 kW and 100 kHz model.

Keywords: direct power transfer, boost converter, zero-voltage transition, zero-current transition

Procedia PDF Downloads 794