Search results for: zero voltage switching
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1544

Search results for: zero voltage switching

1544 A Single Phase ZVT-ZCT Power Factor Correction Boost Converter

Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

Abstract:

In this paper, a single phase soft switched Zero Voltage Transition and Zero Current Transition (ZVT-ZCT) Power Factor Correction (PFC) boost converter is proposed. In the proposed PFC converter, the main switch turns on with ZVT and turns off with ZCT without any additional voltage or current stresses. Auxiliary switch turns on and off with zero current switching (ZCS). Also, the main diode turns on with zero voltage switching (ZVS) and turns off with ZCS. The proposed converter has features like low cost, simple control and structure. The output current and voltage are controlled by the proposed PFC converter in wide line and load range. The theoretical analysis of converter is clarified and the operating steps are given in detail. The simulation results of converter are obtained for 500 W and 100 kHz. It is observed that the semiconductor devices operate with soft switching (SS) perfectly. So, the switching power losses are minimum. Also, the proposed converter has 0.99 power factor with sinusoidal current shape.

Keywords: power factor correction, zero-voltage transition, zero-current transition, soft switching

Procedia PDF Downloads 764
1543 High-Frequency Full-Bridge Isolated DC-DC Converter for Fuel Cell Power Generation Systems

Authors: Nabil A. Ahmed

Abstract:

DC-DC converters are necessary to interface low-voltage fuel cell power generation systems to a higher voltage DC bus system. A system and method for generating a regulated output power from fuel cell power generation systems is proposed in this paper, this includes a soft-switching isolated DC-DC converter to reduce the idling and circulating currents. The system incorporates a high-frequency center tap transformer link DC-DC converter using secondary-side soft switching control. Snubber capacitors including the parasitic capacitance of the switching devices and the transformer leakage inductance are utilized to achieve zero-voltage switching (ZVS) in the primary side of the high-frequency transformer. Therefore, no extra resonant components are required for ZVS. The inherent soft-switching capability allows high power density, efficient power conversion, and compact packaging. A prototype rated at 6.5 kW is proposed and simulated. Simulation results confirmed a wide range of soft-switching operation and consequently high conversion efficiency will be achieved.

Keywords: secondary-side, phase-shift, high-frequency transformer, zero voltage, zero current, soft switching operation, switching losses

Procedia PDF Downloads 276
1542 1 kW Power Factor Correction Soft Switching Boost Converter with an Active Snubber Cell

Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

Abstract:

A 1 kW power factor correction boost converter with an active snubber cell is presented in this paper. In the converter, the main switch turns on under zero voltage transition (ZVT) and turns off under zero current transition (ZCT) without any additional voltage or current stress. The auxiliary switch turns on and off under zero current switching (ZCS). Besides, the main diode turns on under ZVS and turns off under ZCS. The output current and voltage are controlled by the PFC converter in wide line and load range. The simulation results of converter are obtained for 1 kW and 100 kHz. One of the most important feature of the given converter is that it has direct power transfer as well as excellent soft switching techniques. Also, the converter has 0.99 power factor with the sinusoidal input current shape.

Keywords: power factor correction, direct power transfer, zero-voltage transition, zero-current transition, soft switching

Procedia PDF Downloads 924
1541 Zero Voltage Switched Full Bridge Converters for the Battery Charger of Electric Vehicle

Authors: Rizwan Ullah, Abdar Ali, Zahid Ullah

Abstract:

This paper illustrates the study of three isolated zero voltage switched (ZVS) PWM full bridge (FB) converters to charge the high voltage battery in the charger of electric vehicle (EV). EV battery chargers have several challenges such as high efficiency, high reliability, low cost, isolation, and high power density. The cost of magnetic and filter components in the battery charger is reduced when switching frequency is increased. The increase in the switching frequency increases switching losses. ZVS is used to reduce switching losses and to operate the converter in the battery charger at high frequency. The performance of each of the three converters is evaluated on the basis of ZVS range, dead times of the switches, conduction losses of switches, circulating current stress, circulating energy, duty cycle loss, and efficiency. The limitations and merits of each PWM FB converter are reviewed. The converter with broader ZVS range, high efficiency and low switch stresses is selected for battery charger applications in EV.

Keywords: electric vehicle, PWM FB converter, zero voltage switching, circulating energy

Procedia PDF Downloads 405
1540 High-Voltage Resonant Converter with Extreme Load Variation: Design Criteria and Applications

Authors: Jose A. Pomilio, Olavo Bet, Mateus P. Vieira

Abstract:

The power converter that feeds high-frequency, high-voltage transformers must be carefully designed due to parasitic components, mainly the secondary winding capacitance and the leakage inductance, that introduces resonances in relatively low-frequency range, next to the switching frequency. This paper considers applications in which the load (resistive) has an unpredictable behavior, changing from open to short-circuit condition faster than the output voltage control loop could react. In this context, to avoid over voltage and over current situations, that could damage the converter, the transformer or the load, it is necessary to find an operation point that assure the desired output voltage in spite of the load condition. This can done adjusting the frequency response of the transformer adding an external inductance, together with selecting the switching frequency to get stable output voltage independently of the load.

Keywords: high-voltage transformer, resonant converter, soft-commutation, external inductance

Procedia PDF Downloads 448
1539 Digital Control Algorithm Based on Delta-Operator for High-Frequency DC-DC Switching Converters

Authors: Renkai Wang, Tingcun Wei

Abstract:

In this paper, a digital control algorithm based on delta-operator is presented for high-frequency digitally-controlled DC-DC switching converters. The stability and the controlling accuracy of the DC-DC switching converters are improved by using the digital control algorithm based on delta-operator without increasing the hardware circuit scale. The design method of voltage compensator in delta-domain using PID (Proportion-Integration- Differentiation) control is given in this paper, and the simulation results based on Simulink platform are provided, which have verified the theoretical analysis results very well. It can be concluded that, the presented control algorithm based on delta-operator has better stability and controlling accuracy, and easier hardware implementation than the existed control algorithms based on z-operator, therefore it can be used for the voltage compensator design in high-frequency digitally- controlled DC-DC switching converters.

Keywords: digitally-controlled DC-DC switching converter, digital voltage compensator, delta-operator, finite word length, stability

Procedia PDF Downloads 375
1538 Bias Optimization of Mach-Zehnder Modulator Considering RF Gain on OFDM Radio-Over-Fiber System

Authors: Ghazi Al Sukkar, Yazid Khattabi, Shifen Zhong

Abstract:

Most of the recent wireless LANs, broadband access networks, and digital broadcasting use Orthogonal Frequency Division Multiplexing techniques. In addition, the increasing demand of Data and Internet makes fiber optics an important technology, as fiber optics has many characteristics that make it the best solution for transferring huge frames of Data from a point to another. Radio over fiber is the place where high quality RF is converted to optical signals over single mode fiber. Optimum values for the bias level and the switching voltage for Mach-Zehnder modulator are important for the performance of radio over fiber links. In this paper, we propose a method to optimize the two parameters simultaneously; the bias and the switching voltage point of the external modulator of a radio over fiber system considering RF gain. Simulation results show the optimum gain value under these two parameters.

Keywords: OFDM, Mach Zehnder bias voltage, switching voltage, radio-over-fiber, RF gain

Procedia PDF Downloads 436
1537 The Design of PFM Mode DC-DC Converter with DT-CMOS Switch

Authors: Jae-Chang Kwak, Yong-Seo Koo

Abstract:

The high efficiency power management IC (PMIC) with switching device is presented in this paper. PMIC is controlled with PFM control method in order to have high power efficiency at high current level. Dynamic Threshold voltage CMOS (DT-CMOS) with low on-resistance is designed to decrease conduction loss. The threshold voltage of DT-CMOS drops as the gate voltage increase, resulting in a much higher current handling capability than standard MOSFET. PFM control circuits consist of a generator, AND gate and comparator. The generator is made to have 1.2MHz oscillation voltage. The DC-DC converter based on PFM control circuit and low on-resistance switching device is presented in this paper.

Keywords: DT-CMOS, PMIC, PFM, DC-DC converter

Procedia PDF Downloads 424
1536 A Study on Unidirectional Analog Output Voltage Inverter for Capacitive Load

Authors: Sun-Ki Hong, Nam-HeeByeon, Jung-Seop Lee, Tae-Sam Kang

Abstract:

For Common R or R-L load to apply arbitrary voltage, the bridge traditional inverters don’t have any difficulties by PWM method. However for driving some piezoelectric actuator, arbitrary voltage not a pulse but a steady voltage should be applied. Piezoelectric load is considered as R-C load and its voltage does not decrease even though the applied voltage decreases. Therefore it needs some special inverter with circuit that can discharge the capacitive energy. Especially for unidirectional arbitrary voltage driving like as sine wave, it becomes more difficult problem. In this paper, a charge and discharge circuit for unidirectional arbitrary voltage driving for piezoelectric actuator is proposed. The circuit has charging and discharging switches for increasing and decreasing output voltage. With the proposed simple circuit, the load voltage can have any unidirectional level with tens of bandwidth because the load voltage can be adjusted by switching the charging and discharging switch appropriately. The appropriateness is proved from the simulation of the proposed circuit.

Keywords: DC-DC converter, analog output voltage, sinusoidal drive, piezoelectric load, discharging circuit

Procedia PDF Downloads 350
1535 A Comprehensive Evaluation of IGBTs Performance under Zero Current Switching

Authors: Ly. Benbahouche

Abstract:

Currently, several soft switching topologies have been studied to achieve high power switching efficiency, reduced cost, improved reliability and reduced parasites. It is well known that improvement in power electronics systems always depend on advanced in power devices. The IGBT has been successfully used in a variety of switching applications such as motor drives and appliance control because of its superior characteristics. The aim of this paper is focuses on simulation and explication of the internal dynamics of IGBTs behaviour under the most popular soft switching schemas that is Zero Current Switching (ZCS) environments. The main purpose of this paper is to point out some mechanisms relating to current tail during the turn-off and examination of the response at turn-off with variation of temperature, inductance L, snubber capacitors Cs, and bus voltage in order to achieve an improved understanding of internal carrier dynamics. It is shown that the snubber capacitor, the inductance and even the temperature controls the magnitude and extent of the tail current, hence the turn-off time (switching speed of the device). Moreover, it has also been demonstrated that the ZCS switching can be utilized efficiently to improve and reduce the power losses as well as the turn-off time. Furthermore, the turn-off loss in ZCS was found to depend on the time of switching of the device.

Keywords: PT-IGBT, ZCS, turn-off losses, dV/dt

Procedia PDF Downloads 280
1534 Investigation of Resistive Switching in CsPbCl₃ / Cs₄PbCl₆ Core-Shell Nanocrystals Using Scanning Tunneling Spectroscopy: A Step Towards High Density Memory-based Applications

Authors: Arpan Bera, Rini Ganguly, Raja Chakraborty, Amlan J. Pal

Abstract:

To deal with the increasing demands for the high-density non-volatile memory devices, we need nano-sites with efficient and stable charge storage capabilities. We prepared nanocrystals (NCs) of inorganic perovskite, CsPbCl₃ coated with Cs₄PbCl₆, by colloidal synthesis. Due to the type-I band alignment at the junction, this core-shell composite is expected to behave as a charge trapping site. Using Scanning Tunneling Spectroscopy (STS), we investigated voltage-controlled resistive switching in this heterostructure by tracking the change in its current-voltage (I-V) characteristics. By applying voltage pulse of appropriate magnitude on the NCs through this non-invasive method, different resistive states of this system were systematically accessed. For suitable pulse-magnitude, the response jumped to a branch with enhanced current indicating a high-resistance state (HRS) to low-resistance state (LRS) switching in the core-shell NCs. We could reverse this process by using a pulse of opposite polarity. These two distinct resistive states can be considered as two logic states, 0 and 1, which are accessible by varying voltage magnitude and polarity. STS being a local probe in space enabled us to capture this switching at individual NC site. Hence, we claim a bright prospect of these core-shell NCs made of inorganic halide perovskites in future high density memory application.

Keywords: Core-shell perovskite, CsPbCl₃-Cs₄PbCl₆, resistive switching, Scanning Tunneling Spectroscopy

Procedia PDF Downloads 62
1533 ZVZCT PWM Boost DC-DC Converter

Authors: Ismail Aksoy, Haci Bodur, Nihan Altintaş

Abstract:

This paper introduces a boost converter with a new active snubber cell. In this circuit, all of the semiconductor components in the converter softly turns on and turns off with the help of the active snubber cell. Compared to the other converters, the proposed converter has advantages of size, number of components and cost. The main feature of proposed converter is that the extra voltage stresses do not occur on the main switches and main diodes. Also, the current stress on the main switch is acceptable level. Moreover, the proposed converter can operates under light load conditions and wide input line voltage. In this study, the operating principle of the proposed converter is presented and its operation is verified with the Proteus simulation software for a 1 kW and 100 kHz model.

Keywords: active snubber cell, boost converter, zero current switching, zero voltage switching

Procedia PDF Downloads 993
1532 A ZVT-ZCT-PWM DC-DC Boost Converter with Direct Power Transfer

Authors: Naim Suleyman Ting, Yakup Sahin, Ismail Aksoy

Abstract:

This paper presents a zero voltage transition-zero current transition (ZVT-ZCT)-PWM DC-DC boost converter with direct power transfer. In this converter, the main switch turns on with ZVT and turns off with ZCT. The auxiliary switch turns on and off with zero current switching (ZCS). The main diode turns on with ZVS and turns off with ZCS. Besides, the additional current or voltage stress does not occur on the main device. The converter has features as simple structure, fast dynamic response and easy control. Also, the proposed converter has direct power transfer feature as well as excellent soft switching techniques. In this study, the operating principle of the converter is presented and its operation is verified for 1 kW and 100 kHz model.

Keywords: direct power transfer, boost converter, zero-voltage transition, zero-current transition

Procedia PDF Downloads 783
1531 Hybrid PWM Techniques for the Reduction of Switching Losses and Voltage Harmonics in Cascaded Multilevel Inverters

Authors: Venkata Reddy Kota

Abstract:

These days, the industrial trend is moving away from heavy and bulky passive components to power converter systems that use more and more semiconductor elements. Also, it is difficult to connect the traditional converters to the high and medium voltage. For these reasons, a new family of multilevel inverters has appeared as a solution for working with higher voltage levels. Different modulation topologies like Sinusoidal Pulse Width Modulation (SPWM), Selective Harmonic Elimination Pulse Width Modulation (SHE-PWM) are available for multilevel inverters. In this work, different hybrid modulation techniques which are combination of fundamental frequency modulation and multilevel sinusoidal-modulation are compared. The main characteristic of these modulations are reduction of switching losses with good harmonic performance and balanced power loss dissipation among the device. The proposed hybrid modulation schemes are developed and simulated in Matlab/Simulink for cascaded H-bridge inverter. The results validate the applicability of the proposed schemes for cascaded multilevel inverter.

Keywords: hybrid PWM techniques, cascaded multilevel inverters, switching loss minimization

Procedia PDF Downloads 583
1530 Low-Voltage Multiphase Brushless DC Motor for Electric Vehicle Application

Authors: Mengesha Mamo Wogari

Abstract:

In this paper, low voltage multiphase brushless DC motor with square wave air-gap flux distribution for electric vehicle application is proposed. Ten-phase, 5 kW motor, has been designed and simulated by finite element methods demonstrating the desired high torque capability at low speed and flux weakening operation for high-speed operations. The motor torque is proportional to number of phases for a constant phase current and air-gap flux. The concept of vector control and simple space vector modulation technique is used on MATLAB to control the motor demonstrating simple switching pattern for selected number of phases. The low voltage DC and inverter output AC are desired characteristics to avoid any electric shock in the vehicle, accidentally and during abnormal conditions. The switching devices for inverter are of low-voltage rating and cost effective though their number is equal to twice the number of phases.

Keywords: brushless DC motors, electric Vehicle, finite element methods, Low-voltage inverter, multiphase

Procedia PDF Downloads 108
1529 A Double Epilayer PSGT Trench Power MOSFETs for Low to Medium Voltage Power Applications

Authors: Alok Kumar Kamal, Vinod Kumar

Abstract:

The trench gate MOSFET has shown itself as the most appropriate power device for low to medium voltage power applications due to its lowest possible ON resistance among all power semiconductor devices. In this research work a double-epilayer PSGT structure using a thin layer of N+ polysilicon as gate material. The total ON-state resistance (RON) of UMOSFET can be reduced by optimizing the epilayer thickness. The optimized structure of Double-Epilayer exhibits a 25.8% reduction in the ON-state resistance at Vgs=5V and improving the switching characteristics by reducing the Reverse transfer capacitance (Cgd) by 7.4%.

Keywords: Miller-capacitance, double-Epilayer;switching characteristics, power trench MOSFET (U-MOSFET), on-state resistance, blocking voltage

Procedia PDF Downloads 22
1528 Transient Analysis and Mitigation of Capacitor Bank Switching on a Standalone Wind Farm

Authors: Ajibola O. Akinrinde, Andrew Swanson, Remy Tiako

Abstract:

There exist significant losses on transmission lines due to distance, as power generating stations could be located far from some isolated settlements. Standalone wind farms could be a good choice of alternative power generation for such settlements that are far from the grid due to factors of long distance or socio-economic problems. However, uncompensated wind farms consume reactive power since wind turbines are induction generators. Therefore, capacitor banks are used to compensate reactive power, which in turn improves the voltage profile of the network. Although capacitor banks help improving voltage profile, they also undergo switching actions due to its compensating response to the variation of various types of load at the consumer’s end. These switching activities could cause transient overvoltage on the network, jeopardizing the end-life of other equipment on the system. In this paper, the overvoltage caused by these switching activities is investigated using the IEEE bus 14-network to represent a standalone wind farm, and the simulation is done using ATP/EMTP software. Scenarios involving the use of pre-insertion resistor and pre-insertion inductor, as well as controlled switching was also carried out in order to decide the best mitigation option to reduce the overvoltage.

Keywords: capacitor banks, IEEE bus 14-network, pre-insertion resistor, standalone wind farm

Procedia PDF Downloads 412
1527 Modification of Electrical and Switching Characteristics of a Non Punch-Through Insulated Gate Bipolar Transistor by Gamma Irradiation

Authors: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn

Abstract:

Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO2 interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.

Keywords: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center

Procedia PDF Downloads 124
1526 A Soft Switching PWM DC-DC Boost Converter with Increased Efficiency by Using ZVT-ZCT Techniques

Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

Abstract:

In this paper, an improved active snubber cell is proposed on account of soft switching (SS) family of pulse width modulation (PWM) DC-DC converters. The improved snubber cell provides zero-voltage transition (ZVT) turn on and zero-current transition (ZCT) turn off for main switch. The snubber cell decreases EMI noise and operates with SS in a wide range of line and load voltages. Besides, all of the semiconductor devices in the converter operate with SS. There is no additional voltage and current stress on the main devices. Additionally, extra voltage stress does not occur on the auxiliary switch and its current stress is acceptable value. The improved converter has a low cost and simple structure. The theoretical analysis of converter is clarified and the operating states are given in detail. The experimental results of converter are obtained by prototype of 500 W and 100 kHz. It is observed that the experimental results and theoretical analysis of converter are suitable with each other perfectly.

Keywords: active snubber cells, DC-DC converters, zero-voltage transition, zero-current transition

Procedia PDF Downloads 984
1525 Modelling and Simulation of Hysteresis Current Controlled Single-Phase Grid-Connected Inverter

Authors: Evren Isen

Abstract:

In grid-connected renewable energy systems, input power is controlled by AC/DC converter or/and DC/DC converter depending on output voltage of input source. The power is injected to DC-link, and DC-link voltage is regulated by inverter controlling the grid current. Inverter performance is considerable in grid-connected renewable energy systems to meet the utility standards. In this paper, modelling and simulation of hysteresis current controlled single-phase grid-connected inverter that is utilized in renewable energy systems, such as wind and solar systems, are presented. 2 kW single-phase grid-connected inverter is simulated in Simulink and modeled in Matlab-m-file. The grid current synchronization is obtained by phase locked loop (PLL) technique in dq synchronous rotating frame. Although dq-PLL can be easily implemented in three-phase systems, there is difficulty to generate β component of grid voltage in single-phase system because single-phase grid voltage exists. Inverse-Park PLL with low-pass filter is used to generate β component for grid angle determination. As grid current is controlled by constant bandwidth hysteresis current control (HCC) technique, average switching frequency and variation of switching frequency in a fundamental period are considered. 3.56% total harmonic distortion value of grid current is achieved with 0.5 A bandwidth. Average value of switching frequency and total harmonic distortion curves for different hysteresis bandwidth are obtained from model in m-file. Average switching frequency is 25.6 kHz while switching frequency varies between 14 kHz-38 kHz in a fundamental period. The average and maximum frequency difference should be considered for selection of solid state switching device, and designing driver circuit. Steady-state and dynamic response performances of the inverter depending on the input power are presented with waveforms. The control algorithm regulates the DC-link voltage by adjusting the output power.

Keywords: grid-connected inverter, hysteresis current control, inverter modelling, single-phase inverter

Procedia PDF Downloads 451
1524 A Single Switch High Step-Up DC/DC Converter with Zero Current Switching Condition

Authors: Rahil Samani, Saeed Soleimani, Ehsan Adib, Majid Pahlevani

Abstract:

This paper presents an inverting high step-up DC/DC converter. Basically, this high step-up DC/DC converter is an appealing interface for solar applications. The proposed topology takes advantage of using coupled inductors. Due to the leakage inductances of these coupled inductors, the power MOSFET has the zero current switching (ZCS) condition, which results in decreased switching losses. This will substantially improve the overall efficiency of the power converter. Furthermore, employing coupled inductors has led to a higher voltage gain. Theoretical analysis and experimental results of a 100W 20V/220V prototype are presented to verify the superior performance of the proposed DC/DC converter.

Keywords: coupled inductors, high step-up DC/DC converter, zero-current switching, Cuk converter, SEPIC converter

Procedia PDF Downloads 680
1523 Thermal and Dielectric Breakdown Criterium for Low Voltage Switching Devices

Authors: Thomas Merciris, Mathieu Masquere, Yann Cressault, Pascale Petit

Abstract:

The goal of an alternative current (AC) switching device is to allow the arc (created during the opening phase of the contacts) to extinguish at the current zero. The plasma temperature rate of cooling down, the electrical characteristic of the arc (current-voltage), and the rise rate of the transient recovery voltage (TRV) are critical parameters which influence the performance of a switching device. To simulate the thermal extinction of the arc and to obtain qualitative data on the processes responsible for this phenomenon, a 1D MHD fluid model in the air was developed and coupled to an external electric circuit. After thermal extinction, the dielectric strength of the hot air (< 4kK) was then estimated by the Bolsig+ software and the critical electric fields method with the temperature obtained by the MHD simulation. The influence of copper Cu and silver Ag vapors was investigated on the thermal and dielectric part of the simulation with various current forms (100A to 1kA). Finally, those values of dielectric strength have been compared to the experimental values obtained in the case of two separating silver contacts. The preliminary results seem to indicate the dielectric strength after multiples hundreds of microseconds is the same order of magnitude as experimentally found.

Keywords: MHD simulation, dielectric recovery, Bolsig+, silver vapors, copper vapors, breakers, electric arc

Procedia PDF Downloads 66
1522 Fast High Voltage Solid State Switch Using Insulated Gate Bipolar Transistor for Discharge-Pumped Lasers

Authors: Nur Syarafina Binti Othman, Tsubasa Jindo, Makato Yamada, Miho Tsuyama, Hitoshi Nakano

Abstract:

A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for discharge-pumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. The switching characteristic of fast-high voltage solid state switch has been estimated in the multi-stage series-connected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fast-high voltage solid state switch as well as experimental results obtained are presented.

Keywords: high voltage, IGBT, solid state switch, bipolar transistor

Procedia PDF Downloads 523
1521 Design Ultra Fast Gate Drive Board for Silicon Carbide MOSFET Applications

Authors: Syakirin O. Yong, Nasrudin A. Rahim, Bilal M. Eid, Buray Tankut

Abstract:

The aim of this paper is to develop an ultra-fast gate driver for Silicon Carbide (SiC) based switching device applications such as AC/DC DC/AC converters. Wide bandgap semiconductors such as SiC switches are growing rapidly nowadays due to their numerous capabilities such as faster switching, higher power density and higher voltage level. Wide band-gap switches can work properly on high frequencies such 50-250 kHz which is very useful for many power electronic applications such as solar inverters. Increasing the frequency minimizes the output filter size and system complexity however, this causes huge spike between MOSFET’s drain and source leg which leads to the failure of MOSFET if the voltage rating is exceeded. This paper investigates and concludes the optimum design for a gate drive board for SiC MOSFET switches without causing spikes and noises.

Keywords: PV system, lithium-ion, charger, constant current, constant voltage, renewable energy

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1520 Fabrication and Analysis of Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS)

Authors: Deepika Sharma, Bal Krishan

Abstract:

In this paper, the structure of N-channel VDMOS was designed and analyzed using Silvaco TCAD tools by varying N+ source doping concentration, P-Body doping concentration, gate oxide thickness and the diffuse time. VDMOS is considered to be ideal power switches due to its high input impedance and fast switching speed. The performance of the device was analyzed from the Ids vs Vgs curve. The electrical characteristics such as threshold voltage, gate oxide thickness and breakdown voltage for the proposed device structures were extarcted. Effect of epitaxial layer on various parameters is also observed.

Keywords: on-resistance, threshold voltage, epitaxial layer, breakdown voltage

Procedia PDF Downloads 293
1519 A Continuous Switching Technique for a Single Phase Bridgeless and Transformer-Less Active Rectifier with High Power Factor and Voltage Stabilization

Authors: Rahul Ganpat Mapari, D. G. Wakde

Abstract:

In this paper, a proposed approach to improve the power factor of single-phase rectifiers and to regulate the output voltage against the change in grid voltage and load is presented. This converter topology is evaluated on the basis of performance and its salient features like simplicity, low cost and high performance are discussed to analyze its applicability. The proposed control strategy is bridgeless, transformer-less and output current sensor-less and consists of only two Bi-directional IGBTs and two diodes. The voltage regulation is achieved by a simple voltage divider to communicate to a controller to control the duty cycles of PWM. A control technique and operational procedure are also developed, both theoretically and experimentally. The experimental results clearly verify the theoretical analysis from the prototype connected to grid unity.

Keywords: Active Rectifier (AC-DC), power factor, single phase, voltage regulation

Procedia PDF Downloads 546
1518 Domain Switching Characteristics of Lead Zirconate Titanate Piezoelectric Ceramic

Authors: Mitsuhiro Okayasu

Abstract:

To better understand the lattice characteristics of lead zirconate titanate (PZT) ceramics, the lattice orientations and domain-switching characteristics have been directly examined during loading and unloading using various experimental techniques. Upon loading, the PZT ceramics are fractured linear and nonlinearly during the compressive loading process. The strain characteristics of the PZT ceramic were directly affected by both the lattice and domain switching strain. Due to the piezoelectric ceramic, electrical activity of lightning-like behavior occurs in the PZT ceramics, which attributed to the severe domain-switching leading to weak piezoelectric property. The characteristics of domain-switching and reverse switching are detected during the loading and unloading processes. The amount of domain-switching depends on the grain, due to different stress levels. In addition, two patterns of 90˚ domain-switching systems are characterized, namely (i) 90˚ turn about the tetragonal c-axis and (ii) 90˚ rotation of the tetragonal a-axis. In this case, PZT ceramic was loaded by the thermal stress at 80°C. Extent of domain switching is related to the direction of c-axis of the tetragonal structure, e.g., that axis, orientated close to the loading direction, makes severe domain switching. It is considered that there is 90˚ domain switching, but in actual, the angle of domain switching is less than 90˚, e.g., 85.4° ~ 90.0°. In situ TEM observation of the domain switching characteristics of PZT ceramic has been conducted with increasing the sample temperature from 25°C to 300°C, and the domain switching like behavior is directly observed from the lattice image, where the severe domain switching occurs less than 100°C.

Keywords: PZT, lead zirconate titanate, piezoelectric ceramic, domain switching, material property

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1517 Code-Switching and Code Mixing among Ogba-English Bilingual Conversations

Authors: Ben-Fred Ohia

Abstract:

Code-switching and code-mixing are linguistic behaviours that arise in a bilingual situation. They limit speakers in a conversation to decide which code they should use to utter particular phrases or words in the course of carrying out their utterance. Every human society is characterized by the existence of diverse linguistic varieties. The speakers of these varieties at some points have various degrees of contact with the non-speakers of their variety, which one of the outcomes of the linguistic contact is code-switching or code-mixing. The work discusses the nature of code-switching and code-mixing in Ogba-English bilinguals’ speeches. It provides a detailed explanation of the concept of code-switching and code-mixing and explains the typology of code-switching and code-mixing and their manifestation in Ogba-English bilingual speakers’ speeches. The findings reveal that code-switching and code-mixing are functionally motivated and being triggered by various conversational contexts.

Keywords: bilinguals, code-mixing, code-switching, Ogba

Procedia PDF Downloads 134
1516 An Improved Modular Multilevel Converter Voltage Balancing Approach for Grid Connected PV System

Authors: Safia Bashir, Zulfiqar Memon

Abstract:

During the last decade, renewable energy sources in particular solar photovoltaic (PV) has gained increased attention. Therefore, various PV converters topologies have emerged. Among this topology, the modular multilevel converter (MMC) is considered as one of the most promising topologies for the grid-connected PV system due to its modularity and transformerless features. When it comes to the safe operation of MMC, the balancing of the Submodules Voltages (SMs) plays a critical role. This paper proposes a balancing approach based on space vector PWM (SVPWM). Unlike the existing techniques, this method generates the switching vectors for the MMC by using only one SVPWM for the upper arm. The lower arm switching vectors are obtained by finding the complement of the upper arm switching vectors. The use of one SVPWM not only simplifies the calculation but also helped in reducing the circulating current in the MMC. The proposed method is varied through simulation using Matlab/Simulink and compared with other available modulation methods. The results validate the ability of the suggested method in balancing the SMs capacitors voltages and reducing the circulating current which will help in reducing the power loss of the PV system.

Keywords: capacitor voltage balancing, circulating current, modular multilevel converter, PV system

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1515 Spiking Behavior in Memristors with Shared Top Electrode Configuration

Authors: B. Manoj Kumar, C. Malavika, E. S. Kannan

Abstract:

The objective of this study is to investigate the switching behavior of two vertically aligned memristors connected by a shared top electrode, a configuration that significantly deviates from the conventional single oxide layer sandwiched between two electrodes. The device is fabricated by bridging copper electrodes with mechanically exfoliated van der Waals metal (specifically tantalum disulfide and tantalum diselenide). The device demonstrates threshold-switching behavior in its I-V characteristics. When the input voltage signal is ramped with voltages below the threshold, the output current shows spiking behavior, resembling integrated and firing actions without extra circuitry. We also investigated the self-reset behavior of the device. Using a continuous constant voltage bias, we activated the device to the firing state. After removing the bias and reapplying it shortly afterward, the current returned to its initial state. This indicates that the device can spontaneously return to its resting state. The outcome of this investigation offers a fresh perspective on memristor-based device design and an efficient method to construct hardware for neuromorphic computing systems.

Keywords: integrated and firing, memristor, spiking behavior, threshold switching

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