Abstracts | Electronics and Communication Engineering
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1261

World Academy of Science, Engineering and Technology

[Electronics and Communication Engineering]

Online ISSN : 1307-6892

1021 Investigation of the Effects of Gamma Radiation on the Electrically Active Defects in InAs/InGaAs Quantum Dots Laser Structures Grown by Molecular Beam Epitaxy on GaAs Substrates Using Deep Level Transient Spectroscopy

Authors: M. Al Huwayz, A. Salhi, S. Alhassan, S. Alotaibi, A. Almalki, M.Almunyif, A. Alhassni, M. Henini

Abstract:

Recently, there has been much research carried out to investigate quantum dots (QDs) lasers with the aim to increase the gain of quantum well lasers. However, one of the difficulties with these structures is that electrically active defects can lead to serious issues in the performance of these devices. It is therefore essential to fully understand the types of defects introduced during the growth and/or the fabrication process. In this study, the effects of Gamma radiation on the electrically active defects in p-i-n InAs/InGaAsQDs laser structures grown by Molecular Beam Epitaxy (MBE) technique on GaAs substrates were investigated. Deep Level Transient Spectroscopy (DLTS), current-voltage (I-V), and capacitance-voltage (C-V) measurements were performed to explore these effects on the electrical properties of these QDs lasers. I-V measurements showed that as-grown sample had better electrical properties than the irradiated sample. However, DLTS and Laplace DLTS measurements at different reverse biases revealed that the defects in the-region of the p-i-n structures were decreased in the irradiated sample. In both samples, a trap with an activation energy of ~ 0.21 eV was assigned to the well-known defect M1 in GaAs layers

Keywords: quantum dots laser structures, gamma radiation, DLTS, defects, nAs/IngaAs

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1020 Emerging Research Trends in Routing Protocol for Wireless Sensor Network

Authors: Subhra Prosun Paul, Shruti Aggarwal

Abstract:

Now a days Routing Protocol in Wireless Sensor Network has become a promising technique in the different fields of the latest computer technology. Routing in Wireless Sensor Network is a demanding task due to the different design issues of all sensor nodes. Network architecture, no of nodes, traffic of routing, the capacity of each sensor node, network consistency, service value are the important factor for the design and analysis of Routing Protocol in Wireless Sensor Network. Additionally, internal energy, the distance between nodes, the load of sensor nodes play a significant role in the efficient routing protocol. In this paper, our intention is to analyze the research trends in different routing protocols of Wireless Sensor Network in terms of different parameters. In order to explain the research trends on Routing Protocol in Wireless Sensor Network, different data related to this research topic are analyzed with the help of Web of Science and Scopus databases. The data analysis is performed from global perspective-taking different parameters like author, source, document, country, organization, keyword, year, and a number of the publication. Different types of experiments are also performed, which help us to evaluate the recent research tendency in the Routing Protocol of Wireless Sensor Network. In order to do this, we have used Web of Science and Scopus databases separately for data analysis. We have observed that there has been a tremendous development of research on this topic in the last few years as it has become a very popular topic day by day.

Keywords: analysis, routing protocol, research trends, wireless sensor network

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1019 Effect of Rapid Thermal Annealing on the Optical Properties of InAs Quantum Dots Grown on (100) and (311)B GaAs Substrates by Molecular Beam Epitaxy

Authors: Amjad Almunyif, Amra Alhassni, Sultan Alhassan, Maryam Al Huwayz, Saud Alotaibi, Abdulaziz Almalki, Mohamed Henini

Abstract:

The effect of rapid thermal annealing (RTA) on the optical properties of InAs quantum dots (QDs) grown at an As overpressure of 2x 10⁻⁶ Torr by molecular beam epitaxy (MBE) on (100) and (311)B GaAs substrates was investigated using photoluminescence (PL) technique. PL results showed that for the as-grown samples, the QDs grown on the high index plane (311)B have lower PL intensity and lower full width at half maximum (FWHM) than those grown on the conventional (100) plane. The latter demonstrates that the (311)B QDs have better size uniformity than (100) QDs. Compared with as-grown samples, a blue-shift was observed for all samples with increasing annealing temperature from 600°C to 700°C. For (100) samples, a narrowing of the FWHM was observed with increasing annealing temperature from 600°C to 700°C. However, in (311)B samples, the FWHM showed a different behaviour; it slightly increased when the samples were annealed at 600°C and then decreased when the annealing temperature increased to 700°C. As expected, the PL peak intensity for all samples increased when the laser excitation power increased. The PL peak energy temperature dependence showed a strong redshift when the temperature was increased from 10 K to 120 K. The PL peak energy exhibited an abnormal S-shape behaviour as a function of temperature for all samples. Most samples exhibited a significant enhancement in their activation energies when annealed at 600°C and 700°C, suggesting that annealing annihilated defects created during sample growth.

Keywords: RTA, QDs, InAs, MBE

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1018 TMIF: Transformer-Based Multi-Modal Interactive Fusion for Rumor Detection

Authors: Jiandong Lv, Xingang Wang, Cuiling Shao

Abstract:

The rapid development of social media platforms has made it one of the important news sources. While it provides people with convenient real-time communication channels, fake news and rumors are also spread rapidly through social media platforms, misleading the public and even causing bad social impact in view of the slow speed and poor consistency of artificial rumor detection. We propose an end-to-end rumor detection model-TIMF, which captures the dependencies between multimodal data based on the interactive attention mechanism, uses a transformer for cross-modal feature sequence mapping and combines hybrid fusion strategies to obtain decision results. This paper verifies two multi-modal rumor detection datasets and proves the superior performance and early detection performance of the proposed model.

Keywords: hybrid fusion, multimodal fusion, rumor detection, social media, transformer

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1017 Simo-syl: A Computer-Based Tool to Identify Language Fragilities in Italian Pre-Schoolers

Authors: Marinella Majorano, Rachele Ferrari, Tamara Bastianello

Abstract:

The recent technological advance allows for applying innovative and multimedia screen-based assessment tools to test children's language and early literacy skills, monitor their growth over the preschool years, and test their readiness for primary school. Several are the advantages that a computer-based assessment tool offers with respect to paper-based tools. Firstly, computer-based tools which provide the use of games, videos, and audio may be more motivating and engaging for children, especially for those with language difficulties. Secondly, computer-based assessments are generally less time-consuming than traditional paper-based assessments: this makes them less demanding for children and provides clinicians and researchers, but also teachers, with the opportunity to test children multiple times over the same school year and, thus, to monitor their language growth more systematically. Finally, while paper-based tools require offline coding, computer-based tools sometimes allow obtaining automatically calculated scores, thus producing less subjective evaluations of the assessed skills and provide immediate feedback. Nonetheless, using computer-based assessment tools to test meta-phonological and language skills in children is not yet common practice in Italy. The present contribution aims to estimate the internal consistency of a computer-based assessment (i.e., the Simo-syl assessment). Sixty-three Italian pre-schoolers aged between 4;10 and 5;9 years were tested at the beginning of the last year of the preschool through paper-based standardised tools in their lexical (Peabody Picture Vocabulary Test), morpho-syntactical (Grammar Repetition Test for Children), meta-phonological (Meta-Phonological skills Evaluation test), and phono-articulatory skills (non-word repetition). The same children were tested through Simo-syl assessment on their phonological and meta-phonological skills (e.g., recognise syllables and vowels and read syllables and words). The internal consistency of the computer-based tool was acceptable (Cronbach's alpha = .799). Children's scores obtained in the paper-based assessment and scores obtained in each task of the computer-based assessment were correlated. Significant and positive correlations emerged between all the tasks of the computer-based assessment and the scores obtained in the CMF (r = .287 - .311, p < .05) and in the correct sentences in the RCGB (r = .360 - .481, p < .01); non-word repetition standardised test significantly correlates with the reading tasks only (r = .329 - .350, p < .05). Further tasks should be included in the current version of Simo-syl to have a comprehensive and multi-dimensional approach when assessing children. However, such a tool represents a good chance for the teachers to early identifying language-related problems even in the school environment.

Keywords: assessment, computer-based, early identification, language-related skills

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1016 Adaptive Auth - Adaptive Authentication Based on User Attributes for Web Application

Authors: Senthuran Manoharan, Rathesan Sivagananalingam

Abstract:

One of the main issues in system security is Authentication. Authentication can be defined as the process of recognizing the user's identity and it is the most important step in the access control process to safeguard data/resources from being accessed by unauthorized users. The static method of authentication cannot ensure the genuineness of the user. Due to this reason, more innovative authentication mechanisms came into play. At first two factor authentication was introduced and later, multi-factor authentication was introduced to enhance the security of the system. It also had some issues and later, adaptive authentication was introduced. In this research paper, the design of an adaptive authentication engine was put forward. The user risk profile was calculated based on the user parameters and then the user was challenged with a suitable authentication method.

Keywords: authentication, adaptive authentication, machine learning, security

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1015 Effect of Geomagnetic Field on Motion of Conductor

Authors: Bharti Gupta, Alaukik Sharma

Abstract:

The first aim is to determine the effect of the Earth's magnetic field on the motion of a conductor to evaluate the variations of the orbital elements of the conductor due to these effects. The effects of Earth's magnetic field on the motion of conductors have been studied at different heights, longitudes and latitudes. When the conductor cut the geomagnetic line of force, then an electro-motive force (EMF) is induced across to the conductor. Due to this induced EMF, an induced current will flow through the conductor. Resulting, a Lorentz force will be applied on the conductor who opposes the motion of the conductor. So our second aim is to determine the accurate value of Induced EMF and induced Lorentz Force at different heights, longitudes and latitudes.

Keywords: induced EMF, Lorentz force, geomagnetic lines of force, moving conductor

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1014 Next Generation of Tunnel Field Effect Transistor: NCTFET

Authors: Naima Guenifi, Shiromani Balmukund Rahi, Amina Bechka

Abstract:

Tunnel FET is one of the most suitable alternatives FET devices for conventional CMOS technology for low-power electronics and applications. Due to its lower subthreshold swing (SS) value, it is a strong follower of low power applications. It is a quantum FET device that follows the band to band (B2B) tunneling transport phenomena of charge carriers. Due to band to band tunneling, tunnel FET is suffering from a lower switching current than conventional metal-oxide-semiconductor field-effect transistor (MOSFET). For improvement of device features and limitations, the newly invented negative capacitance concept of ferroelectric material is implemented in conventional Tunnel FET structure popularly known as NC TFET. The present research work has implemented the idea of high-k gate dielectric added with ferroelectric material on double gate Tunnel FET for implementation of negative capacitance. It has been observed that the idea of negative capacitance further improves device features like SS value. It helps to reduce power dissipation and switching energy. An extensive investigation for circularity uses for digital, analog/RF and linearity features of double gate NCTFET have been adopted here for research work. Several essential designs paraments for analog/RF and linearity parameters like transconductance(gm), transconductance generation factor (gm/IDS), its high-order derivatives (gm2, gm3), cut-off frequency (fT), gain-bandwidth product (GBW), transconductance generation factor (gm/IDS) has been investigated for low power RF applications. The VIP₂, VIP₃, IMD₃, IIP₃, distortion characteristics (HD2, HD3), 1-dB, the compression point, delay and power delay product performance have also been thoroughly studied.

Keywords: analog/digital, ferroelectric, linearity, negative capacitance, Tunnel FET, transconductance

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1013 Modeling and Design of E-mode GaN High Electron Mobility Transistors

Authors: Samson Mil'shtein, Dhawal Asthana, Benjamin Sullivan

Abstract:

The wide energy gap of GaN is the major parameter justifying the design and fabrication of high-power electronic components made of this material. However, the existence of a piezo-electrics in nature sheet charge at the AlGaN/GaN interface complicates the control of carrier injection into the intrinsic channel of GaN HEMTs (High Electron Mobility Transistors). As a result, most of the transistors created as R&D prototypes and all of the designs used for mass production are D-mode devices which introduce challenges in the design of integrated circuits. This research presents the design and modeling of an E-mode GaN HEMT with a very low turn-on voltage. The proposed device includes two critical elements allowing the transistor to achieve zero conductance across the channel when Vg = 0V. This is accomplished through the inclusion of an extremely thin, 2.5nm intrinsic Ga₀.₇₄Al₀.₂₆N spacer layer. The added spacer layer does not create piezoelectric strain but rather elastically follows the variations of the crystal structure of the adjacent GaN channel. The second important factor is the design of a gate metal with a high work function. The use of a metal gate with a work function (Ni in this research) greater than 5.3eV positioned on top of n-type doped (Nd=10¹⁷cm⁻³) Ga₀.₇₄Al₀.₂₆N creates the necessary built-in potential, which controls the injection of electrons into the intrinsic channel as the gate voltage is increased. The 5µm long transistor with a 0.18µm long gate and a channel width of 30µm operate at Vd=10V. At Vg =1V, the device reaches the maximum drain current of 0.6mA, which indicates a high current density. The presented device is operational at frequencies greater than 10GHz and exhibits a stable transconductance over the full range of operational gate voltages.

Keywords: compound semiconductors, device modeling, enhancement mode HEMT, gallium nitride

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1012 Development of Non-Intrusive Speech Evaluation Measure Using S-Transform and Light-Gbm

Authors: Tusar Kanti Dash, Ganapati Panda

Abstract:

The evaluation of speech quality and intelligence is critical to the overall effectiveness of the Speech Enhancement Algorithms. Several intrusive and non-intrusive measures are employed to calculate these parameters. Non-Intrusive Evaluation is most challenging as, very often, the reference clean speech data is not available. In this paper, a novel non-intrusive speech evaluation measure is proposed using audio features derived from the Stockwell transform. These features are used with the Light Gradient Boosting Machine for the effective prediction of speech quality and intelligibility. The proposed model is analyzed using noisy and reverberant speech from four databases, and the results are compared with the standard Intrusive Evaluation Measures. It is observed from the comparative analysis that the proposed model is performing better than the standard Non-Intrusive models.

Keywords: non-Intrusive speech evaluation, S-transform, light GBM, speech quality, and intelligibility

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1011 Design and Modelling of Ge/GaAs Hetero-structure Bipolar Transistor

Authors: Samson Mil'shtein, Dhawal N. Asthana

Abstract:

The presented heterostructure n-p-n bipolar transistor is comprised of Ge/GaAs heterojunctions consisting of 0.15µm thick emitter and 0.65µm collector junctions. High diffusivity of carriers in GaAs base was major motivation of current design. We avoided grading of the base which is common in heterojunction bipolar transistors, in order to keep the electron diffusivity as high as possible. The electrons injected into the 0.25µm thick p-type GaAs base with not very high doping (1017cm-3). The designed HBT enables cut off frequency on the order of 150GHz. The Ge/GaAs heterojunctions presented in our paper have proved to work better than comparable HBTs having GaAs bases and emitter/collector junctions made, for example, of AlGaAs/GaAs or other III-V compound semiconductors. The difference in lattice constants between Ge and GaAs is less than 2%. Therefore, there is no need of transition layers between Ge emitter and GaAs base. Significant difference in energy gap of these two materials presents new scope for improving performance of the emitter. With the complete structure being modelled and simulated using TCAD SILVACO, the collector/ emitter offset voltage of the device has been limited to a reasonable value of 63 millivolts by the dint of low energy band gap value associated with Ge emitter. The efficiency of the emitter in our HBT is 86%. Use of Germanium in the emitter and collector regions presents new opportunities for integration of this vertical device structure into silicon substrate.

Keywords: Germanium, Gallium Arsenide, heterojunction bipolar transistor, high cut-off frequency

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1010 Identification of Soft Faults in Branched Wire Networks by Distributed Reflectometry and Multi-Objective Genetic Algorithm

Authors: Soumaya Sallem, Marc Olivas

Abstract:

This contribution presents a method for detecting, locating, and characterizing soft faults in a complex wired network. The proposed method is based on multi-carrier reflectometry MCTDR (Multi-Carrier Time Domain Reflectometry) combined with a multi-objective genetic algorithm. In order to ensure complete network coverage and eliminate diagnosis ambiguities, the MCTDR test signal is injected at several points on the network, and the data is merged between different reflectometers (sensors) distributed on the network. An adapted multi-objective genetic algorithm is used to merge data in order to obtain more accurate faults location and characterization. The proposed method performances are evaluated from numerical and experimental results.

Keywords: wired network, reflectometry, network distributed diagnosis, multi-objective genetic algorithm

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1009 Skew Planar Wheel Antenna for First Person View of Unmanned Aerial Vehicle

Authors: Raymond Yudhi Purba, Levy Olivia Nur, Radial Anwar

Abstract:

This research presents the design and measurement of a skew planar wheel antenna that is used to visualize the first person view perspective of unmanned aerial vehicles. The antenna has been designed using CST Studio Suite 2019 to have voltage standing wave ratio (VSWR) ≤ 2, return loss ≤ -10 dB, bandwidth ≥ 100 MHz to covering outdoor access point band from 5.725 to 5.825 GHz, omnidirectional radiation pattern, and elliptical polarization. Dimensions of skew planar wheel antenna have been modified using parameter sweep technique to provide good performances. The simulation results provide VSWR 1.231, return loss -19.693 dB, bandwidth 828.8 MHz, gain 3.292 dB, and axial ratio 9.229 dB. Meanwhile, the measurement results provide VSWR 1.237, return loss -19.476 dB, bandwidth 790.5 MHz, gain 3.2034 dB, and axial ratio 4.12 dB.

Keywords: skew planar wheel, cloverleaf, first-person view, unmanned aerial vehicle, parameter sweep

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1008 Performance Evaluation of a Millimeter-Wave Phased Array Antenna Using Circularly Polarized Elements

Authors: Rawad Asfour, Salam Khamas, Edward A. Ball

Abstract:

This paper is focused on the design of an mm-wave phased array. To date, linear polarization is adapted in the reported designs of phased arrays. However, linear polarization faces several well-known challenges. As such, an advanced design for phased array antennas is required that offers circularly polarized (CP) radiation. A feasible solution for achieving CP phased array antennas is proposed using open-circular loop antennas. To this end, a 3-element circular loop phased array antenna is designed to operate at 28GHz. In addition, the array ability to control the direction of the main lobe is investigated. The results show that the highest achievable field of view (FOV) is 100°, i.e., 50° to the left and 50° to the right-hand side directions. The results are achieved with a CP bandwidth of 15%. Furthermore, the results demonstrate that a high broadside gain of circa 11 dBi can be achieved for the steered beam. Besides, a radiation efficiency of 97 % can also be achieved based on the proposed design.

Keywords: loop antenna, phased array, beam steering, wide bandwidth, circular polarization, CST

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1007 Permanent Reduction of Arc Flash Energy to Safe Limit on Line Side of 480 Volt Switchgear Incomer Breaker

Authors: Abid Khan

Abstract:

A recognized engineering challenge is related to personnel protection from fatal arc flash incident energy in the line side of the 480-volt switchgear incomer breakers during maintenance activities. The incident energy is typically high due to slow fault clearance, and it can be higher than the available personnel protective equipment (PPE) ratings. A fault in this section of the switchgear is cleared by breakers or fuses in the upstream higher voltage system (4160 Volt or higher). The current reflection in the higher voltage upstream system for a fault in the 480-volt switchgear is low, the clearance time is slower, and the inversely proportional incident energy is hence higher. The installation of overcurrent protection at a 480-volt system upstream of the incomer breaker will operate fast enough and trips the upstream higher voltage breaker when a fault develops at the incomer breaker. Therefore, fault current reduction as reflected in the upstream higher voltage system is eliminated. Since the fast overcurrent protection is permanently installed, it is always functional, does not require human interventions, and eliminates exposure to human errors. It is installed at the maintenance activities location, and its operations can be locally monitored by craftsmen during maintenance activities.

Keywords: arc flash, mitigation, maintenance switch, energy level

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1006 A 1.8 GHz to 43 GHz Low Noise Amplifier with 4 dB Noise Figure in 0.1 µm Galium Arsenide Technology

Authors: Mantas Sakalas, Paulius Sakalas

Abstract:

This paper presents an analysis and design of a ultrawideband 1.8GHz to 43GHz Low Noise Amplifier (LNA) in 0.1 μm Galium Arsenide (GaAs) pseudomorphic High Electron Mobility Transistor (pHEMT) technology. The feedback based bandwidth extension techniques is analyzed and based on the outcome, a two stage LNA is designed. The impedance fine tuning is implemented by using Transmission Line (TL) structures. The measured performance shows a good agreement with simulation results and an outstanding wideband noise matching. The measured small signal gain was 12 dB, whereas a 3 dB gain flatness in range from 1.8 - 43 GHz was reached. The noise figure was below 4 dB almost all over the entire frequency band of 1.8GHz to 43GHz, the output power at 1 dB compression point was 6 dBm and the DC power consumption was 95 mW. To the best knowledge of the authors the designed LNA outperforms the State of the Art (SotA) reported LNA designs in terms of combined parameters of noise figure within the addressed ultra-wide 3 dB bandwidth, linearity and DC power consumption.

Keywords: feedback amplifiers, GaAs pHEMT, monolithic microwave integrated circuit, LNA, noise matching

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1005 Error Correction Method for 2D Ultra-Wideband Indoor Wireless Positioning System Using Logarithmic Error Model

Authors: Phornpat Chewasoonthorn, Surat Kwanmuang

Abstract:

Indoor positioning technologies have been evolved rapidly. They augment the Global Positioning System (GPS) which requires line-of-sight to the sky to track the location of people or objects. This study developed an error correction method for an indoor real-time location system (RTLS) based on an ultra-wideband (UWB) sensor from Decawave. Multiple stationary nodes (anchor) were installed throughout the workspace. The distance between stationary and moving nodes (tag) can be measured using a two-way-ranging (TWR) scheme. The result has shown that the uncorrected ranging error from the sensor system can be as large as 1 m. To reduce ranging error and thus increase positioning accuracy, This study purposes an online correction algorithm using the Kalman filter. The results from experiments have shown that the system can reduce ranging error down to 5 cm.

Keywords: indoor positioning, ultra-wideband, error correction, Kalman filter

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1004 Spatial Correlation of Channel State Information in Real Long Range Measurement

Authors: Ahmed Abdelghany, Bernard Uguen, Christophe Moy, Dominique Lemur

Abstract:

The Internet of Things (IoT) is developed to ensure monitoring and connectivity within different applications. Thus, it is critical to study the channel propagation characteristics in Low Power Wide Area Network (LPWAN), especially Long Range Wide Area Network (LoRaWAN). In this paper, an in-depth investigation of the reciprocity between the uplink and downlink Channel State Information (CSI) is done by performing an outdoor measurement campaign in the area of Campus Beaulieu in Rennes. At each different location, the CSI reciprocity is quantified using the Pearson Correlation Coefficient (PCC) which shows a very high linear correlation between the uplink and downlink CSI. This reciprocity feature could be utilized for the physical layer security between the node and the gateway. On the other hand, most of the CSI shapes from different locations are highly uncorrelated from each other. Hence, it can be anticipated that this could achieve significant localization gain by utilizing the frequency hopping in the LoRa systems by getting access to a wider band.

Keywords: IoT, LPWAN, LoRa, effective signal power, onsite measurement

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1003 Smart and Active Package Integrating Printed Electronics

Authors: Joana Pimenta, Lorena Coelho, José Silva, Vanessa Miranda, Jorge Laranjeira, Rui Soares

Abstract:

In this paper, the results of R&D on an innovative food package for increased shelf-life are presented. SAP4MA aims at the development of a printed active device that enables smart packaging solutions for food preservation, targeting the extension of the shelf-life of the packed food through the controlled release of active natural antioxidant agents at the onset of the food degradation process. To do so, SAP4MA focuses on the development of active devices such as printed heaters and batteries/supercapacitors in a label format to be integrated on packaging lids during its injection molding process, promoting the passive release of natural antioxidants after the product is packed, during transportation and in the shelves, and actively when the end-user activates the package, just prior to consuming the product at home. When the active device present on the lid is activated, the release of the natural antioxidants embedded in the inner layer of the packaging lid in direct contact with the headspace atmosphere of the food package starts. This approach is based on the use of active functional coatings composed of nano encapsulated active agents (natural antioxidants species) in the prevention of the oxidation of lipid compounds in food by agents such as oxygen. Thus keeping the product quality during the shelf-life, not only when the user opens the packaging, but also during the period from food packaging up until the purchase by the consumer. The active systems that make up the printed smart label, heating circuit, and battery were developed using screen-printing technology. These systems must operate under the working conditions associated with this application. The printed heating circuit was studied using three different substrates and two different conductive inks. Inks were selected, taking into consideration that the printed circuits will be subjected to high pressures and temperatures during the injection molding process. The circuit must reach a homogeneous temperature of 40ºC in the entire area of the lid of the food tub, promoting a gradual and controlled release of the antioxidant agents. In addition, the circuit design involves a high level of study in order to guarantee maximum performance after the injection process and meet the specifications required by the control electronics component. Furthermore, to characterize the different heating circuits, the electrical resistance promoted by the conductive ink and the circuit design, as well as the thermal behavior of printed circuits on different substrates, were evaluated. In the injection molding process, the serpentine-shaped design developed for the heating circuit was able to resolve the issues connected to the injection point; in addition, the materials used in the support and printing had high mechanical resistance against the pressure and temperature inherent to the injection process. Acknowledgment: This research has been carried out within the Project “Smart and Active Packing for Margarine Product” (SAP4MA) running under the EURIPIDES Program being co-financed by COMPETE 2020 – the Operational Programme for Competitiveness and Internationalization and under Portugal 2020 through the European Regional Development Fund (ERDF).

Keywords: smart package, printed heat circuits, printed batteries, flexible and printed electronic

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1002 Resonant Tunnelling Diode Output Characteristics Dependence on Structural Parameters: Simulations Based on Non-Equilibrium Green Functions

Authors: Saif Alomari

Abstract:

The paper aims at giving physical and mathematical descriptions of how the structural parameters of a resonant tunnelling diode (RTD) affect its output characteristics. Specifically, the value of the peak voltage, peak current, peak to valley current ratio (PVCR), and the difference between peak and valley voltages and currents ΔV and ΔI. A simulation-based approach using the Non-Equilibrium Green Function (NEGF) formalism based on the Silvaco ATLAS simulator is employed to conduct a series of designed experiments. These experiments show how the doping concentration in the emitter and collector layers, their thicknesses, and the width of the barriers and the quantum well influence the above-mentioned output characteristics. Each of these parameters was systematically changed while holding others fixed in each set of experiments. Factorial experiments are outside the scope of this work and will be investigated in future. The physics involved in the operation of the device is thoroughly explained and mathematical models based on curve fitting and underlaying physical principles are deduced. The models can be used to design devices with predictable output characteristics. These models were found absent in the literature that the author acanned. Results show that the doping concentration in each region has an effect on the value of the peak voltage. It is found that increasing the carrier concentration in the collector region shifts the peak to lower values, whereas increasing it in the emitter shifts the peak to higher values. In the collector’s case, the shift is either controlled by the built-in potential resulting from the concentration gradient or the conductivity enhancement in the collector. The shift to higher voltages is found to be also related to the location of the Fermi-level. The thicknesses of these layers play a role in the location of the peak as well. It was found that increasing the thickness of each region shifts the peak to higher values until a specific characteristic length, afterwards the peak becomes independent of the thickness. Finally, it is shown that the thickness of the barriers can be optimized for a particular well width to produce the highest PVCR or the highest ΔV and ΔI. The location of the peak voltage is important in optoelectronic applications of RTDs where the operating point of the device is usually the peak voltage point. Furthermore, the PVCR, ΔV, and ΔI are of great importance for building RTD-based oscillators as they affect the frequency response and output power of the oscillator.

Keywords: peak to valley ratio, peak voltage shift, resonant tunneling diodes, structural parameters

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1001 Modbus Gateway Design Using Arm Microprocessor

Authors: Semanur Savruk, Onur Akbatı

Abstract:

Integration of various communication protocols into an automation system causes a rise in setup and maintenance cost and make to control network devices in difficulty. The gateway becomes necessary for reducing complexity in network topology. In this study, Modbus RTU/Modbus TCP industrial ethernet gateway design and implementation are presented with ARM embedded system and FreeRTOS real-time operating system. The Modbus gateway can perform communication with Modbus RTU and Modbus TCP devices over itself. Moreover, the gateway can be adjustable with the user-interface application or messaging interface. Conducted experiments and the results are presented in the paper. Eventually, the proposed system is a complete, low-cost, real-time, and user-friendly design for monitoring and setting devices and useful for meeting remote control purposes.

Keywords: gateway, industrial communication, modbus, network

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1000 Time and Wavelength Division Multiplexing Passive Optical Network Comparative Analysis: Modulation Formats and Channel Spacings

Authors: A. Fayad, Q. Alqhazaly, T. Cinkler

Abstract:

In light of the substantial increase in end-user requirements and the incessant need of network operators to upgrade the capabilities of access networks, in this paper, the performance of the different modulation formats on eight-channels Time and Wavelength Division Multiplexing Passive Optical Network (TWDM-PON) transmission system has been examined and compared. Limitations and features of modulation formats have been determined to outline the most suitable design to enhance the data rate and transmission reach to obtain the best performance of the network. The considered modulation formats are On-Off Keying Non-Return-to-Zero (NRZ-OOK), Carrier Suppressed Return to Zero (CSRZ), Duo Binary (DB), Modified Duo Binary (MODB), Quadrature Phase Shift Keying (QPSK), and Differential Quadrature Phase Shift Keying (DQPSK). The performance has been analyzed by varying transmission distances and bit rates under different channel spacing. Furthermore, the system is evaluated in terms of minimum Bit Error Rate (BER) and Quality factor (Qf) without applying any dispersion compensation technique, or any optical amplifier. Optisystem software was used for simulation purposes.

Keywords: BER, DuoBinary, NRZ-OOK, TWDM-PON

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999 Spectrum Assignment Algorithms in Optical Networks with Protection

Authors: Qusay Alghazali, Tibor Cinkler, Abdulhalim Fayad

Abstract:

In modern optical networks, the flex grid spectrum usage is most widespread, where higher bit rate streams get larger spectrum slices while lower bit rate traffic streams get smaller spectrum slices. To our practice, under the ITU-T recommendation, G.694.1, spectrum slices of 50, 75, and 100 GHz are being used with central frequency at 193.1 THz. However, when these spectrum slices are not sufficient, multiple spectrum slices can use either one next to another or anywhere in the optical wavelength. In this paper, we propose the analysis of the wavelength assignment problem. We compare different algorithms for this spectrum assignment with and without protection. As a reference for comparisons, we concluded that the Integer Linear Programming (ILP) provides the global optimum for all cases. The most scalable algorithm is the greedy one, which yields results in subsequent ranges even for more significant network instances. The algorithms’ benchmark implemented using the LEMON C++ optimization library and simulation runs based on a minimum number of spectrum slices assigned to lightpaths and their execution time.

Keywords: spectrum assignment, integer linear programming, greedy algorithm, international telecommunication union, library for efficient modeling and optimization in networks

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998 Analytical Model of Locomotion of a Thin-Film Piezoelectric 2D Soft Robot Including Gravity Effects

Authors: Zhiwu Zheng, Prakhar Kumar, Sigurd Wagner, Naveen Verma, James C. Sturm

Abstract:

Soft robots have drawn great interest recently due to a rich range of possible shapes and motions they can take on to address new applications, compared to traditional rigid robots. Large-area electronics (LAE) provides a unique platform for creating soft robots by leveraging thin-film technology to enable the integration of a large number of actuators, sensors, and control circuits on flexible sheets. However, the rich shapes and motions possible, especially when interacting with complex environments, pose significant challenges to forming well-generalized and robust models necessary for robot design and control. In this work, we describe an analytical model for predicting the shape and locomotion of a flexible (steel-foil-based) piezoelectric-actuated 2D robot based on Euler-Bernoulli beam theory. It is nominally (unpowered) lying flat on the ground, and when powered, its shape is controlled by an array of piezoelectric thin-film actuators. Key features of the models are its ability to incorporate the significant effects of gravity on the shape and to precisely predict the spatial distribution of friction against the contacting surfaces, necessary for determining inchworm-type motion. We verified the model by developing a distributed discrete element representation of a continuous piezoelectric actuator and by comparing its analytical predictions to discrete-element robot simulations using PyBullet. Without gravity, predicting the shape of a sheet with a linear array of piezoelectric actuators at arbitrary voltages is straightforward. However, gravity significantly distorts the shape of the sheet, causing some segments to flatten against the ground. Our work includes the following contributions: (i) A self-consistent approach was developed to exactly determine which parts of the soft robot are lifted off the ground, and the exact shape of these sections, for an arbitrary array of piezoelectric voltages and configurations. (ii) Inchworm-type motion relies on controlling the relative friction with the ground surface in different sections of the robot. By adding torque-balance to our model and analyzing shear forces, the model can then determine the exact spatial distribution of the vertical force that the ground is exerting on the soft robot. Through this, the spatial distribution of friction forces between ground and robot can be determined. (iii) By combining this spatial friction distribution with the shape of the soft robot, in the function of time as piezoelectric actuator voltages are changed, the inchworm-type locomotion of the robot can be determined. As a practical example, we calculated the performance of a 5-actuator system on a 50-µm thick steel foil. Piezoelectric properties of commercially available thin-film piezoelectric actuators were assumed. The model predicted inchworm motion of up to 200 µm per step. For independent verification, we also modelled the system using PyBullet, a discrete-element robot simulator. To model a continuous thin-film piezoelectric actuator, we broke each actuator into multiple segments, each of which consisted of two rigid arms with appropriate mass connected with a 'motor' whose torque was set by the applied actuator voltage. Excellent agreement between our analytical model and the discrete-element simulator was shown for both for the full deformation shape and motion of the robot.

Keywords: analytical modeling, piezoelectric actuators, soft robot locomotion, thin-film technology

Procedia PDF Downloads 180
997 Meta Mask Correction for Nuclei Segmentation in Histopathological Image

Authors: Jiangbo Shi, Zeyu Gao, Chen Li

Abstract:

Nuclei segmentation is a fundamental task in digital pathology analysis and can be automated by deep learning-based methods. However, the development of such an automated method requires a large amount of data with precisely annotated masks which is hard to obtain. Training with weakly labeled data is a popular solution for reducing the workload of annotation. In this paper, we propose a novel meta-learning-based nuclei segmentation method which follows the label correction paradigm to leverage data with noisy masks. Specifically, we design a fully conventional meta-model that can correct noisy masks by using a small amount of clean meta-data. Then the corrected masks are used to supervise the training of the segmentation model. Meanwhile, a bi-level optimization method is adopted to alternately update the parameters of the main segmentation model and the meta-model. Extensive experimental results on two nuclear segmentation datasets show that our method achieves the state-of-the-art result. In particular, in some noise scenarios, it even exceeds the performance of training on supervised data.

Keywords: deep learning, histopathological image, meta-learning, nuclei segmentation, weak annotations

Procedia PDF Downloads 140
996 Hybridized Simulated Annealing with Chemical Reaction Optimization for Solving to Sequence Alignment Problem

Authors: Ernesto Linan, Linda Cruz, Lucero Becerra

Abstract:

In this paper, a new hybridized algorithm based on Chemical Reaction Optimization and Simulated Annealing is proposed to solve the alignment sequence Problem. The Chemical Reaction Optimization is a population-based meta-heuristic algorithm based on the principles of a chemical reaction. Simulated Annealing is applied to solve a large number of combinatorial optimization problems of general-purpose. In this paper, we propose hybridization between Chemical Reaction Optimization algorithm and Simulated Annealing in order to solve the Sequence Alignment Problem. An initial population of molecules is defined at beginning of the proposed algorithm, where each molecule represents a sequence alignment problem. In order to simulate inter-molecule collisions, the process of Chemical Reaction is placed inside the Metropolis Cycle at certain values of temperature. Inside this cycle, change of molecules is done due to collisions; some molecules are accepted by applying Boltzmann probability. The results with the hybrid scheme are better than the results obtained separately.

Keywords: chemical reaction optimization, sequence alignment problem, simulated annealing algorithm, metaheuristics

Procedia PDF Downloads 211
995 Vertically Coupled III-V/Silicon Single Mode Laser with a Hybrid Grating Structure

Authors: Zekun Lin, Xun Li

Abstract:

Silicon photonics has gained much interest and extensive research for a promising aspect for fabricating compact, high-speed and low-cost photonic devices compatible with complementary metal-oxide-semiconductor (CMOS) process. Despite the remarkable progress made on the development of silicon photonics, high-performance, cost-effective, and reliable silicon laser sources are still missing. In this work, we present a 1550 nm III-V/silicon laser design with stable single-mode lasing property and robust and high-efficiency vertical coupling. The InP cavity consists of two uniform Bragg grating sections at sides for mode selection and feedback, as well as a central second-order grating for surface emission. A grating coupler is etched on the SOI waveguide by which the light coupling between the parallel III-V and SOI is reached vertically rather than by evanescent wave coupling. Laser characteristic is simulated and optimized by the traveling-wave model (TWM) and a Green’s function analysis as well as a 2D finite difference time domain (FDTD) method for the coupling process. The simulation results show that single-mode lasing with SMSR better than 48dB is achievable, and the threshold current is less than 15mA with a slope efficiency of around 0.13W/A. The coupling efficiency is larger than 42% and possesses a high tolerance with less than 10% reduction for 10 um horizontal or 15 um vertical dislocation. The design can be realized by standard flip-chip bonding techniques without co-fabrication of III-V and silicon or precise alignment.

Keywords: III-V/silicon integration, silicon photonics, single mode laser, vertical coupling

Procedia PDF Downloads 156
994 Sensitivity Improvement of Optical Ring Resonator for Strain Analysis with the Direction of Strain Recognition Possibility

Authors: Tayebeh Sahraeibelverdi, Ahmad Shirazi Hadi Veladi, Mazdak Radmalekshah

Abstract:

Optical sensors became attractive due to preciseness, low power consumption, and intrinsic electromagnetic interference-free characteristic. Among the waveguide optical sensors, cavity-based ones attended for the high Q-factor. Micro ring resonators as a potential platform have been investigated for various applications as biosensors to pressure sensors thanks to their sensitive ring structure responding to any small change in the refractive index. Furthermore, these small micron size structures can come in an array, bringing the opportunity to have any of the resonance in a specific wavelength and be addressed in this way. Another exciting application is applying a strain to the ring and making them an optical strain gauge where the traditional ones are based on the piezoelectric material. Making them in arrays needs electrical wiring and about fifty times bigger in size. Any physical element that impacts the waveguide cross-section, Waveguide elastic-optic property change, or ring circumference can play a role. In comparison, ring size change has a larger effect than others. Here an engineered ring structure is investigated to study the strain effect on the ring resonance wavelength shift and its potential for more sensitive strain devices. At the same time, these devices can measure any strain by mounting on the surface of interest. The idea is to change the" O" shape ring to a "C" shape ring with a small opening starting from 2π/360 or one degree. We used the Mode solution of Lumbrical software to investigate the effect of changing the ring's opening and the shift induced by applied strain. The designed ring radius is a three Micron silicon on isolator ring which can be fabricated by standard complementary metal-oxide-semiconductor (CMOS) micromachining. The measured wavelength shifts from1-degree opening of the ring to a 6-degree opening have been investigated. Opening the ring for 1-degree affects the ring's quality factor from 3000 to 300, showing an order of magnitude Q-factor reduction. Assuming a strain making the ring-opening from 1 degree to 6 degrees, our simulation results showing negligible Q-factor reduction from 300 to 280. A ring resonator quality factor can reach up to 108 where an order of magnitude reduction is negligible. The resonance wavelength shift showed a blue shift and was obtained to be 1581, 1579,1578,1575nm for 1-, 2-, 4- and 6-degree ring-opening, respectively. This design can find the direction of the strain-induced by applying the opening on different parts of the ring. Moreover, by addressing the specified wavelength, we can precisely find the direction. We can open a significant opportunity to find cracks and any surface mechanical property very specifically and precisely. This idea can be implemented on polymer ring resonators while they can come with a flexible substrate and can be very sensitive to any strain making the two ends of the ring in the slit part come closer or further.

Keywords: optical ring resonator, strain gauge, strain sensor, surface mechanical property analysis

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993 Evaluating the Feasibility of Magnetic Induction to Cross an Air-Water Boundary

Authors: Mark Watson, J.-F. Bousquet, Adam Forget

Abstract:

A magnetic induction based underwater communication link is evaluated using an analytical model and a custom Finite-Difference Time-Domain (FDTD) simulation tool. The analytical model is based on the Sommerfeld integral, and a full-wave simulation tool evaluates Maxwell’s equations using the FDTD method in cylindrical coordinates. The analytical model and FDTD simulation tool are then compared and used to predict the system performance for various transmitter depths and optimum frequencies of operation. To this end, the system bandwidth, signal to noise ratio, and the magnitude of the induced voltage are used to estimate the expected channel capacity. The models show that in seawater, a relatively low-power and small coils may be capable of obtaining a throughput of 40 to 300 kbps, for the case where a transmitter is at depths of 1 to 3 m and a receiver is at a height of 1 m.

Keywords: magnetic induction, FDTD, underwater communication, Sommerfeld

Procedia PDF Downloads 125
992 Random Access in IoT Using Naïve Bayes Classification

Authors: Alhusein Almahjoub, Dongyu Qiu

Abstract:

This paper deals with the random access procedure in next-generation networks and presents the solution to reduce total service time (TST) which is one of the most important performance metrics in current and future internet of things (IoT) based networks. The proposed solution focuses on the calculation of optimal transmission probability which maximizes the success probability and reduces TST. It uses the information of several idle preambles in every time slot, and based on it, it estimates the number of backlogged IoT devices using Naïve Bayes estimation which is a type of supervised learning in the machine learning domain. The estimation of backlogged devices is necessary since optimal transmission probability depends on it and the eNodeB does not have information about it. The simulations are carried out in MATLAB which verify that the proposed solution gives excellent performance.

Keywords: random access, LTE/LTE-A, 5G, machine learning, Naïve Bayes estimation

Procedia PDF Downloads 145