Search results for: Fermi Map
14 Using Hermite Function for Solving Thomas-Fermi Equation
Authors: F. Bayatbabolghani, K. Parand
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In this paper, we propose Hermite collocation method for solving Thomas-Fermi equation that is nonlinear ordinary differential equation on semi-infinite interval. This method reduces the solution of this problem to the solution of a system of algebraic equations. We also present the comparison of this work with solution of other methods that shows the present solution is more accurate and faster convergence in this problem.
Keywords: Collocation method, Hermite function, Semi-infinite, Thomas-Fermi equation.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 215013 Global Behavior in (Q-xy)2 Potential
Authors: K. Jaroensutasinee
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The general global behavior of particle S a non-linear (Q - xy)2 potential cannot be revealed a Poincare surface of section method (PSS) because inost trajectories take practically infinitely long time to integrate numerically before they come back to the surface. In this study as an alternative to PSS, a multiple scale perturbation is applied to analyze global adiabatic, non-adiabatic and chaotic behavior of particles in this potential. It was found that the results can be summarized as a form of a Fermi-like map. Additionally, this method gives a variation of global stochasticity criteria with Q.
Keywords: Multiple Scak Perturbation The Poincare Surface or Section, Fermi Map
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 126312 Debye Layer Confinement of Nucleons in Nuclei by Laser Ablated Plasma
Authors: M. Ghanaatian, N. Ghahramany, A. Bazrafshan
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Following the laser ablation studies leading to a theory of nuclei confinement by a Debye layer mechanism, we present here numerical evaluations for the known stable nuclei where the Coulomb repulsion is included as a rather minor component especially for lager nuclei. In this research paper the required physical conditions for the formation and stability of nuclei particularly endothermic nuclei with mass number greater than to which is an open astrophysical question have been investigated. Using the Debye layer mechanism, nuclear surface energy, Fermi energy and coulomb repulsion energy it is possible to find conditions under which the process of nucleation is permitted in early universe. Our numerical calculations indicate that about 200 second after the big bang at temperature of about 100 KeV and subrelativistic region with nucleon density nearly equal to normal nuclear density namely, 10cm all endothermic and exothermic nuclei have been formed.Keywords: Endothermic nuclear synthesis, Fermi energy, Surface tension, Debye length.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 157311 Temperature Dependent Interaction Energies among X (=Ru, Rh) Impurities in Pd-Rich PdX Alloys
Authors: M. Asato, C. Liu, N. Fujima, T. Hoshino, Y. Chen, T. Mohri
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We study the temperature dependence of the interaction energies (IEs) of X (=Ru, Rh) impurities in Pd, due to the Fermi-Dirac (FD) distribution and the thermal vibration effect by the Debye-Grüneisen model. The n-body (n=2~4) IEs among X impurities in Pd, being used to calculate the internal energies in the free energies of the Pd-rich PdX alloys, are determined uniquely and successively from the lower-order to higher-order, by the full-potential Korringa-Kohn-Rostoker Green’s function method (FPKKR), combined with the generalized gradient approximation in the density functional theory. We found that the temperature dependence of IEs due to the FD distribution, being usually neglected, is very important to reproduce the X-concentration dependence of the observed solvus temperatures of the Pd-rich PdX (X=Ru, Rh) alloys.
Keywords: Full-potential KKR-Green’s function method, Fermi-Dirac distribution, GGA, phase diagram of Pd-rich PdX (X=Ru, Rh) alloys, thermal vibration effect.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 100310 Quantum Ion Acoustic Solitary and Shock Waves in Dissipative Warm Plasma with Fermi Electron and Positron
Authors: Hamid Reza Pakzad
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Ion-acoustic solitary and shock waves in dense quantum plasmas whose constituents are electrons, positrons, and positive ions are investigated. We assume that ion velocity is weakly relativistic and also the effects of kinematic viscosity among the plasma constituents is considered. By using the reductive perturbation method, the Korteweg–deVries–Burger (KdV-B) equation is derived.Keywords: Ion acoustic shock waves; Quantum plasmas
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 17449 Propagation of Electron-Acoustic Solitary Waves in Weakly Relativistically Degenerate Fermi Plasma
Authors: Swarniv Chandra, Basudev Ghosh, S. N. Paul
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Using one dimensional Quantum hydrodynamic (QHD) model Korteweg de Vries (KdV) solitary excitations of electron-acoustic waves (EAWs) have been examined in twoelectron- populated relativistically degenerate super dense plasma. It is found that relativistic degeneracy parameter influences the conditions of formation and properties of solitary structures.Keywords: Relativistic Degeneracy, Electron-Acoustic Waves, Quantum Plasma, KdV Equation.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 17418 Toward an Architecture of a Component-Based System Supporting Separation of Non- Functional Concerns
Authors: Jerzy Nogiec, Kelley Trombly-Freytag, Shangping Ren
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The promises of component-based technology can only be fully realized when the system contains in its design a necessary level of separation of concerns. The authors propose to focus on the concerns that emerge throughout the life cycle of the system and use them as an architectural foundation for the design of a component-based framework. The proposed model comprises a set of superimposed views of the system describing its functional and non-functional concerns. This approach is illustrated by the design of a specific framework for data analysis and data acquisition and supplemented with experiences from using the systems developed with this framework at the Fermi National Accelerator Laboratory.Keywords: Distributed system, component-based technology, separation of concerns, software development, supervisory and control, QoS
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 13357 Monte Carlo Simulation of the Transport Phenomena in Degenerate Hg0.8Cd0.2Te
Authors: N. Dahbi, M. Daoudi, A.Belghachi
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The present work deals with the calculation of transport properties of Hg0.8Cd0.2Te (MCT) semiconductor in degenerate case. Due to their energy-band structure, this material becomes degenerate at moderate doping densities, which are around 1015 cm-3, so that the usual Maxwell-Boltzmann approximation is inaccurate in the determination of transport parameters. This problem is faced by using Fermi-Dirac (F-D) statistics, and the non-parabolic behavior of the bands may be approximated by the Kane model. The Monte Carlo (MC) simulation is used here to determinate transport parameters: drift velocity, mean energy and drift mobility versus electric field and the doped densities. The obtained results are in good agreement with those extracted from literature.Keywords: degeneracy case, Hg0.8Cd0.2Te semiconductor, Monte Carlo simulation, transport parameters.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 18276 The Role of Ga(Gallium)-flux and AlN(Aluminum Nitride) as the Interface Materials, between (Ga-face)GaN and (Siface)4H-SiC, through Molecular Dynamics Simulation
Authors: Srikanta Bose, Sudip K. Mazumder
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We report here, the results of molecular dynamics simulation of p-doped (Ga-face)GaN over n-doped (Siface)( 0001)4H-SiC hetero-epitaxial material system with one-layer each of Ga-flux and (Al-face)AlN, as the interface materials, in the form of, the total Density of States (DOS). It is found that the total DOS at the Fermi-level for the heavily p-doped (Ga-face)GaN and ndoped (Si-face)4H-SiC hetero-epitaxial system, with one layer of (Al-face)AlN as the interface material, is comparatively higher than that of the various cases studied, indicating that there could be good vertical conduction across the (Ga-face)GaN over (Si-face)(0001)4HSiC hetero-epitaxial material system.Keywords: Molecular dynamics, GaN, 4H-SiC, hetero-epitaxy.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 20125 Highly Conductive Polycrystalline Metallic Ring in a Magnetic Field
Authors: Isao Tomita
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Electrical conduction in a quasi-one-dimensional polycrystalline metallic ring with a long electron phase coherence length realized at low temperature is investigated. In this situation, the wave nature of electrons is important in the ring, where the electrical current I can be induced by a vector potential that arises from a static magnetic field applied perpendicularly to the ring’s area. It is shown that if the average grain size of the polycrystalline ring becomes large (or comparable to the Fermi wavelength), the electrical current I increases to ~I0, where I0 is a current in a disorder-free ring. The cause of this increasing effect is examined, and this takes place if the electron localization length in the polycrystalline potential increases with increasing grain size, which gives rise to coherent connection of tails of a localized electron wave function in the ring and thus provides highly coherent electrical conduction.Keywords: Electrical Conduction, Electron Phase Coherence, Polycrystalline Metal, Magnetic Field.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 16304 Structural and Electronic Characterization of Supported Ni and Au Catalysts used in Environment Protection Determined by XRD,XAS and XPS methods
Authors: N. Aldea, V. Rednic, F. Matei, Tiandou Hu, M. Neumann
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The nickel and gold nanoclusters as supported catalysts were analyzed by XAS, XRD and XPS in order to determine their local, global and electronic structure. The present study has pointed out a strong deformation of the local structure of the metal, due to its interaction with oxide supports. The average particle size, the mean squares of the microstrain, the particle size distribution and microstrain functions of the supported Ni and Au catalysts were determined by XRD method using Generalized Fermi Function for the X-ray line profiles approximation. Based on EXAFS analysis we consider that the local structure of the investigated systems is strongly distorted concerning the atomic number pairs. Metal-support interaction is confirmed by the shape changes of the probability densities of electron transitions: Ni K edge (1s → continuum and 2p), Au LIII-edge (2p3/2 → continuum, 6s, 6d5/2 and 6d3/2). XPS investigations confirm the metal-support interaction at their interface.Keywords: local and global structure, metal-support interaction, supported metal catalysts, synchrotron radiation, X-ray absorptionspectroscopy, X-ray diffraction, X-ray photoelectron spectroscopy.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 17783 Spin-Dependent Transport Signatures of Bound States: From Finger to Top Gates
Authors: Yun-Hsuan Yu, Chi-Shung Tang, Nzar Rauf Abdullah, Vidar Gudmundsson
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Spin-orbit gap feature in energy dispersion of one-dimensional devices is revealed via strong spin-orbit interaction (SOI) effects under Zeeman field. We describe the utilization of a finger-gate or a top-gate to control the spin-dependent transport characteristics in the SOI-Zeeman influenced split-gate devices by means of a generalized spin-mixed propagation matrix method. For the finger-gate system, we find a bound state in continuum for incident electrons within the ultra-low energy regime. For the top-gate system, we observe more bound-state features in conductance associated with the formation of spin-associated hole-like or electron-like quasi-bound states around band thresholds, as well as hole bound states around the reverse point of the energy dispersion. We demonstrate that the spin-dependent transport behavior of a top-gate system is similar to that of a finger-gate system only if the top-gate length is less than the effective Fermi wavelength.Keywords: Spin-orbit, Zeeman, top-gate, finger-gate, bound state.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 9492 Effects of Double Delta Doping on Millimeter and Sub-millimeter Wave Response of Two-Dimensional Hot Electrons in GaAs Nanostructures
Authors: N. Basanta Singh, Sanjoy Deb, G. P Mishra, Subir Kumar Sarkar
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Carrier mobility has become the most important characteristic of high speed low dimensional devices. Due to development of very fast switching semiconductor devices, speed of computer and communication equipment has been increasing day by day and will continue to do so in future. As the response of any device depends on the carrier motion within the devices, extensive studies of carrier mobility in the devices has been established essential for the growth in the field of low dimensional devices. Small-signal ac transport of degenerate two-dimensional hot electrons in GaAs quantum wells is studied here incorporating deformation potential acoustic, polar optic and ionized impurity scattering in the framework of heated drifted Fermi-Dirac carrier distribution. Delta doping is considered in the calculations to investigate the effects of double delta doping on millimeter and submillimeter wave response of two dimensional hot electrons in GaAs nanostructures. The inclusion of delta doping is found to enhance considerably the two dimensional electron density which in turn improves the carrier mobility (both ac and dc) values in the GaAs quantum wells thereby providing scope of getting higher speed devices in future.Keywords: Carrier mobility, Delta doping, Hot carriers, Quantum wells.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 16721 Optimization the Conditions of Electrophoretic Deposition Fabrication of Graphene-Based Electrode to Consider Applications in Electro-Optical Sensors
Authors: Sepehr Lajevardi Esfahani, Shohre Rouhani, Zahra Ranjbar
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Graphene has gained much attention owing to its unique optical and electrical properties. Charge carriers in graphene sheets (GS) carry out a linear dispersion relation near the Fermi energy and behave as massless Dirac fermions resulting in unusual attributes such as the quantum Hall effect and ambipolar electric field effect. It also exhibits nondispersive transport characteristics with an extremely high electron mobility (15000 cm2/(Vs)) at room temperature. Recently, several progresses have been achieved in the fabrication of single- or multilayer GS for functional device applications in the fields of optoelectronic such as field-effect transistors ultrasensitive sensors and organic photovoltaic cells. In addition to device applications, graphene also can serve as reinforcement to enhance mechanical, thermal, or electrical properties of composite materials. Electrophoretic deposition (EPD) is an attractive method for development of various coatings and films. It readily applied to any powdered solid that forms a stable suspension. The deposition parameters were controlled in various thicknesses. In this study, the graphene electrodeposition conditions were optimized. The results were obtained from SEM, Ohm resistance measuring technique and AFM characteristic tests. The minimum sheet resistance of electrodeposited reduced graphene oxide layers is achieved at conditions of 2 V in 10 s and it is annealed at 200 °C for 1 minute.
Keywords: Electrophoretic deposition, graphene oxide, electrical conductivity, electro-optical devices.
Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 970