Search results for: pass transistor

Authors: Peihao Huang, Chun Zhao

Abstract:

Thin-film transistors(TFTs) have the advantages of low power consumption, short reaction time, and have high research value in the field of semiconductors, based on this reason, people have focused on gallium oxide-indium oxide thin-film transistors, a relatively common thin-film transistor, elaborated and analyzed his production process, "aqueous solution method", explained the purpose of each step of operation, and finally explored the influence of potassium ions doped in the channel layer on the electrical properties of the device, as well as the effect of oxygen vacancies on its switching ratio and memory, and summarized the conclusions.

Keywords: aqueous solution, oxygen vacancies, switch ratio, thin-film transistor(TFT)

Procedia PDF Downloads 66

Authors: Alessandra Chiara Maraschin, Estelle Trengove

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In South Africa, only 23% of engineering students attain their degrees in the minimum time of 4 years. This begs the question: Why is the 4-year throughput rate so low? Improving the throughput rate is crucial in assisting students to the shortest possible path to completion. The Electrical Engineering programme has a fixed curriculum and students must pass all courses in order to graduate. In South Africa, as is the case in several other countries, many students rely on external funding such as bursaries from companies in industry. If students fail a course, they often lose their bursaries, and most might not be able to fund their 'repeating year' fees. It is thus important to improve the throughput rate, since for many students, graduating from university is a way out of poverty for an entire family. In Electrical Engineering, it has been found that the Software Development I course (an introduction to C++ programming) is a significant hurdle course for students and has been found to have a low pass rate. It has been well-documented that students struggle with this type of course as it introduces a number of new threshold concepts that can be challenging to grasp in a short time frame. In an attempt to mitigate this situation, a part-time night-school for Software Development I was introduced in 2015 as an intervention measure. The course includes all the course material from the Software Development I module and allows students who failed the course in first semester a second chance by repeating the course through taking the night-school course. The purpose of this study is to determine whether the introduction of this intervention course could be considered a success. The success of the intervention is assessed in two ways. The study will first look at whether the night-school course contributed to improving the pass rate of the Software Development I course. Secondly, the study will examine whether the intervention contributed to improving the overall throughput from the 2nd year to the 3rd year of study at a South African University. Second year academic results for a sample of 1216 students have been collected from 2010-2017. Preliminary results show that the lowest pass rate for Software Development I was found to be in 2017 with a pass rate of 34.9%. Since the intervention course's inception, the pass rate for Software Development I has increased each year from 2015-2017 by 13.75%, 25.53% and 25.81% respectively. To conclude, the preliminary results show that the intervention course is a success in improving the pass rate of Software Development I.

Keywords: academic performance, electrical engineering, engineering education, intervention course, low pass rate, software development course, throughput

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Authors: Mohamed Yousef, Magdy Samuel, Maha El-Meligy, Taher El-Bitar

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The present work is dealing with 2% Si-steel alloy. The alloy contains 0.05% C as well as 0.85% Al. The alloy under investigation would be used for electrical transformation purposes. A heating (expansion) - cooling (contraction) dilation investigation was executed to detect the a, a+g, and g transformation temperatures at the inflection points of the dilation curve. On heating, primary a  was detected at a temperature range between room temperature and 687 ^oC. The domain of a+g was detected in the range between 687 ^oC and 746 ^oC. g phase exists in the closed g region at the range between 746 ^oC and 1043 ^oC. The domain of a phase appears again at a temperature range between 1043 and 1105 ^oC, and followed by secondary a at temperature higher than 1105 ^oC. A physical simulation of thermo-mechanical processing on the as-cast alloy was carried out. The simulation process took into consideration the hot flat rolling pilot plant parameters. The process was executed on the thermo-mechanical simulator (Gleeble 3500). The process was designed to include seven consecutive passes. The 1^st pass represents the roughing stage, while the remaining six passes represent finish rolling stage. The whole process was executed at the temperature range from 1100 ^oC to 900 ^oC. The amount of strain starts with 23.5% at the roughing pass and decreases continuously to reach 7.5 % at the last finishing pass. The flow curve of the alloy can be abstracted from the stress-strain curves representing simulated passes. It shows alloy hardening from a pass to the other up to pass no. 6, as a result of decreasing the deformation temperature and increasing of cumulative strain. After pass no. 6, the deformation process enhances the dynamic recrystallization phenomena to appear, where the z-parameter would be high.

Keywords: si- steel, hot deformability, critical transformation temperature, physical simulation, thermo-mechanical processing, flow curve, dynamic softening.

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Authors: Phanumas Khumsat, Chalermchai Janmane

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Low-voltage instrumentation amplifier has been proposed for 3-lead electrocardiogram measurement system. The circuit’s interference rejection technique is based upon common-mode feed-forwarding where common-mode currents have cancelled each other at the output nodes. The common-mode current for cancellation is generated by means of common-mode sensing and emitter or source followers with resistors employing only one transistor. Simultaneously this particular transistor also provides common-mode feedback to the patient’s right/left leg to further reduce interference entering the amplifier. The proposed designs have been verified with simulations in 0.18-µm CMOS process operating under 1.0-V supply with CMRR greater than 80dB. Moreover ECG signals have experimentally recorded with the proposed instrumentation amplifiers implemented from discrete BJT (BC547, BC558) and MOSFET (ALD1106, ALD1107) transistors working with 1.5-V supply.

Keywords: electrocardiogram, common-mode feedback, common-mode feedforward, communication engineering

Procedia PDF Downloads 354

Authors: Hassane Ouazzani Chahdi, Omar Helli, Bourzgui Nour Eddine, Hassan Maher, Ali Soltani

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The real-time knowledge of the NO, NO₂ concentration at high temperature, would allow manufacturers of automobiles to meet the upcoming stringent EURO7 anti-pollution measures for diesel engines. Knowledge of the concentration of each of these species will also enable engines to run leaner (i.e., more fuel efficient) while still meeting the anti-pollution requirements. Our proposed technology is promising in the field of automotive sensors. It consists of nanostructured semiconductors based on gallium nitride and zirconia dioxide. The development of new technologies for selective detection of NO and NO₂ gas species would be a critical enabler of superior depollution. The current response was well correlated to the NO concentration in the range of 0–2000 ppm, 0-2500 ppm NO₂, and 0-300 ppm NH₃ at a temperature of 600.

Keywords: NOₓ sensors, HEMT transistor, anti-pollution, gallium nitride, gas sensor

Procedia PDF Downloads 215

Authors: Noha Al Majid, Said Mazer, Moulhime El Bekkali, Catherine Algani, Mahmoud Mehdi

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A low noise figure (NF) and high linearity V-band Low Noise Amplifier (LNA) is reported in this article. The LNA compromises a three-stage cascode configuration. This LNA will be used as a part of a WPAN (Wireless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. It is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH 15 process from UMS foundry and uses a 0.15 μm GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor). The particularity of this LNA compared to other LNAs in literature is its very low noise figure which is equal to 1 dB and its high linearity (IIP3 is about 22 dB). The LNA consumes 0.24 Watts, achieving a high gain which is about 23 dB, an input return loss better than -10 dB and an output return loss better than -8 dB.

Keywords: low noise amplifier, V-band, MMIC technology, LNA, amplifier, cascode, pseudomorphic high electron mobility transistor (PHEMT), high linearity

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Authors: Subal Kar, Amitesh Kumar, A. Majumder, S. K. Ghosh, S. Saha, S. S. Sikdar, T. K. Saha

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CRLH (composite right/left-handed) based and SRR (split-ring resonator) based filters have been designed at microwave frequency which can provide better performance compared to conventional edge-coupled band-pass filter designed around the same frequency, 2.45 GHz. Both CRLH and SRR are unit cells used in metamaterial design. The primary aim of designing filters with such structures is to realize size reduction and also to realize novel filter performance. The CRLH based filter has been designed in microstrip transmission line, while the SRR based filter is designed with SRR loading in waveguide. The CRLH based filter designed at 2.45 GHz provides an insertion loss of 1.6 dB with harmonic suppression up to 10 GHz with 67 % size reduction when compared with a conventional edge-coupled band-pass filter designed around the same frequency. One dimensional (1-D) SRR matrix loaded in a waveguide shows the possibility of realizing a stop-band with sharp skirts in the pass-band while a stop-band in the pass-band of normal rectangular waveguide with tailoring of the dimensions of SRR unit cells. Such filters are expected to be very useful for communication systems at microwave frequency.

Keywords: BPF, CRLH, harmonic, metamaterial, SRR and waveguide

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Authors: Kankeyanathan Kannan

Abstract:

On approximation properties of group C* algebras is everywhere; it is powerful, important, backbone of countless breakthroughs. For a discrete group G, let A(G) denote its Fourier algebra, and let M₀A(G) denote the space of completely bounded Fourier multipliers on G. An approximate identity on G is a sequence (Φn) of finitely supported functions such that (Φn) uniformly converge to constant function 1 In this paper we prove that approximation property pass to free product.

Keywords: approximation property, weakly amenable, strong invariant approximation property, invariant approximation property

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Authors: Khalida S. Rijab, Mohammed E. Safi, Ayad A. Ibrahim

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When electrical electrodes are mounted on the skin surface of the muscle, a signal is detected when a skeletal muscle undergoes contraction; the signal is known as surface electromyographic signal (EMG). This signal has a noise-like interference pattern resulting from the temporal and spatial summation of action potentials (AP) of all active motor units (MU) near electrode detection. By appropriate processing (Decomposition), the surface EMG signal may be used to give an estimate of motor unit action potential. In this work, a denoising technique is applied to the MUAP signals extracted from the spatial filter (IB2). A set of signals from a non-invasive two-dimensional grid of 16 electrodes from different types of subjects, muscles, and sex are recorded. These signals will acquire noise during recording and detection. A digital fourth order band- pass Butterworth filter is used for denoising, with a tuned band-pass frequency of suitable choice of cutoff frequencies is investigated, with the aim of obtaining a suitable band pass frequency. Results show an improvement of (1-3 dB) in the signal to noise ratio (SNR) have been achieved, relative to the raw spatial filter output signals for all cases that were under investigation. Furthermore, the research’s goal included also estimation and reconstruction of the mean shape of the MUAP.

Keywords: EMG, Motor Unit, Digital Filter, Denoising

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Authors: Yeon-Jong Jeong, Mok-Tan Ahn, Seok-Hyeon Park, Seong-Hun Ha, Joon-Hong Park, Jong-Bae Park

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Multi-stage drawing process is an important technique for forming a shape that cannot be molded in a single process. multi-stage drawing process in number of passes and the shape of the die are an important factors influencing the productivity and formability of the product. The number and shape of the multi-path in the mold of the drawing process is very influencing the productivity and formability of the product. Half angle of the die and mandrel affects the drawing force and it also affects the completion of the final shape. Thus reducing the number of pass and the die shape optimization are necessary to improve the formability of the billet. Analyzing the load on the die through the FEM analysis and in consideration of the formability of the material presents a die model.

Keywords: multi-pass shape drawing, equivalent stress, FEM, finite element method, optimum shape

Procedia PDF Downloads 448

Authors: Mok-Tan Ahn, Hyeok Choi, Joon-Hong Park

Abstract:

Multi-stage drawing process is an important technique for forming a shape that cannot be molded in a single process. multi-stage drawing process in number of passes and the shape of the die are an important factor influencing the productivity and moldability of the product. The number and shape of the multi-path in the mold of the drawing process is very influencing the productivity and moldability of the product. Half angle of the die and mandrel affects the drawing force and it also affects the completion of the final shape. Thus reducing the number of pass and the die shape optimization are necessary to improve the formability of the billet. The purpose of this study, Analyzing the load on the die through the FEM analysis and in consideration of the formability of the material presents a die model.

Keywords: automotive reinforcing agent, multi-pass shape drawing, automotive parts, FEM analysis

Procedia PDF Downloads 428

Authors: Ke-Jing Lee, Cheng-Jung Lee, Yu-Chi Chang, Li-Wen Wang, Yeong-Her Wang

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To avoid the cross-talk issue of only resistive random access memory (RRAM) cell, one transistor and one resistor (1T1R) architecture with a TiO₂-based RRAM cell connected with solution barium zirconate nickelate (BZN) organic thin film transistor (OTFT) device is successfully demonstrated. The OTFT were fabricated on a glass substrate. Aluminum (Al) as the gate electrode was deposited via a radio-frequency (RF) magnetron sputtering system. The barium acetate, zirconium n-propoxide, and nickel II acetylacetone were synthesized by using the sol-gel method. After the BZN solution was completely prepared using the sol-gel process, it was spin-coated onto the Al/glass substrate as the gate dielectric. The BZN layer was baked at 100 °C for 10 minutes under ambient air conditions. The pentacene thin film was thermally evaporated on the BZN layer at a deposition rate of 0.08 to 0.15 nm/s. Finally, gold (Au) electrode was deposited using an RF magnetron sputtering system and defined through shadow masks as both the source and drain. The channel length and width of the transistors were 150 and 1500 μm, respectively. As for the manufacture of 1T1R configuration, the RRAM device was fabricated directly on drain electrodes of TFT device. A simple metal/insulator/metal structure, which consisting of Al/TiO₂/Au structures, was fabricated. First, Au was deposited to be a bottom electrode of RRAM device by RF magnetron sputtering system. Then, the TiO₂ layer was deposited on Au electrode by sputtering. Finally, Al was deposited as the top electrode. The electrical performance of the BZN OTFT was studied, showing superior transfer characteristics with the low threshold voltage of −1.1 V, good saturation mobility of 5 cm²/V s, and low subthreshold swing of 400 mV/decade. The integration of the BZN OTFT and TiO₂ RRAM devices was finally completed to form 1T1R configuration with low power consumption of 1.3 μW, the low operation current of 0.5 μA, and reliable data retention. Based on the I-V characteristics, the different polarities of bipolar switching are found to be determined by the compliance current with the different distribution of the internal oxygen vacancies used in the RRAM and 1T1R devices. Also, this phenomenon can be well explained by the proposed mechanism model. It is promising to make the 1T1R possible for practical applications of low-power active matrix flat-panel displays.

Keywords: one transistor and one resistor (1T1R), organic thin-film transistor (OTFT), resistive random access memory (RRAM), sol-gel

Procedia PDF Downloads 327

Authors: Mokhtar Nikgoo

Abstract:

Definition of bridge: A bridge is a structure that allows people to pass through the communication road with two points. There are many different types of bridges, each of which is designed to perform a specific function. This article introduces the concept, history, components, uses, types, construction methods, selected factors, damage factors and principles of bridge maintenance. A bridge is a structure to cross a passage such as a water, valley or road without blocking another path underneath. This structure makes it possible to pass obstacles that are difficult or impossible to pass. There are different designs for bridge construction, each of which is used for a particular function and condition. In the old definition, a bridge is an arch over a river, valley, or any type of passage that makes traffic possible. But today, in the topic of urban management, the bridge is considered as a structure to cross physical barriers, so that while using space (not just the surface of the earth), it can facilitate the passage and access to places. The useful life of bridges may be between 30 and 80 years depending on the location and the materials used. But with proper maintenance and improvement, their life may last for hundreds of years.

Keywords: bridge, road construction, surveying, transportation

Procedia PDF Downloads 482

Authors: Santi Termprasertsakul, Jakkrich Jearviriyaboonya

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This paper studies the market power and pricing behavior of products in iron and steel industry by investigating the impact of vertical product differentiation (VPD) on exchange rate pass-through (ERPT). Vietnam has become one of the major trading partners of Thailand since 2017. The iron and steel export value to Vietnam is more than $300 million a year. Particularly, the average growth rate of importing iron and steel is approximately 30% per year. The VPD is applied to analyze the quality difference of iron and steel between Thailand and Vietnam. The 20 products in iron and steel industry are investigated. The monthly pricing behavior of Harmonized Commodity Description and Coding System 4-digit products is observed from 2010 to 2019. The Nonlinear Autoregressive Distributed Lag is also used to analyze the asymmetry of ERPT in this paper. The empirical results basically reveal an incomplete pass-through between Thai Baht and Vietnamese Dong. The ERPT also varies with the degree of VPD. The product with higher VPD, indicating higher unit values, has higher ERPT. This result suggests the higher market power of the Thai iron and steel industry. In addition, the asymmetry of ERPT exists.

Keywords: exchange rate pass-through, iron and steel industry, pricing behavior, vertical product differentiation

Procedia PDF Downloads 115

Authors: Carolina Senabre Blanes, Sergio Valero Verdú, Emilio Velasco SáNchez

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This research objective is to obtain a percentage of success for each Ministry of Transport (MOT) facilities of each city of the Alicante region from Comunidad Valenciana from Spain by comparing results obtained by using different brake testers. It has been studied which types of brake tester are being used at each city nowadays. Different types of brake testers are used at each city, and the mechanical engineering staffs from the Miguel Hernández University have studied differences between all of them, and have obtained measures from each type. A percentage of probability of success will be given to each MOT station when you try to pass the exam with the same car with same characteristics and the same wheels. In other words, parameters of the vehicle have been controlled to be the same at all tests; therefore, brake measurements variability will be due to the type of testers could be used at the MOT station. A percentage of probability to pass the brake exam at each city will be given by comparing results of tests.

Keywords: brake tester, Mot station, probability to pass the exam, brake tester characteristics

Procedia PDF Downloads 266

Authors: Ju-Hong Lee, Ding-Chen Chung

Abstract:

The paper deals with the optimal design of two-channel linear-phase (LP) quadrature mirror filter (QMF) banks using a metaheuristic based optimization technique. Based on the theory of two-channel QMF banks using two recursive digital all-pass filters (DAFs), the design problem is appropriately formulated to result in an objective function which is a weighted sum of the group delay error of the designed QMF bank and the magnitude response error of the designed low-pass analysis filter. Through a frequency sampling and a weighted least squares approach, the optimization problem of the objective function can be solved by utilizing a particle swarm optimization algorithm. The resulting two-channel QMF banks can possess approximately LP response without magnitude distortion. Simulation results are presented for illustration and comparison.

Keywords: quadrature mirror filter bank, digital all-pass filter, weighted least squares algorithm, particle swarm optimization

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Authors: Akiyoshi Wakatani

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This paper describes the Message Passing Interface (MPI) implementation of ADETRAN language, and its evaluation on SX-ACE supercomputers. ADETRAN language includes pdo statement that specifies the data distribution and parallel computations and pass statement that specifies the redistribution of arrays. Two methods for implementation of pass statement are discussed and the performance evaluation using Splitting-Up CG method is presented. The effectiveness of the parallelization is evaluated and the advantage of one dimensional distribution is empirically confirmed by using the results of experiments.

Keywords: iterative methods, array redistribution, translator, distributed memory

Procedia PDF Downloads 243

Authors: H. Alheeh, M. Alameri, A. Al Tarabsheh

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There has been a growing interest in CMOS-based sensors technology in cameras as they afford low-power, small-size, and cost-effective imaging systems. This article describes the CMOS image sensor pixel categories and presents the design and the simulation of the 3-Transistor (3T) Active Pixel Sensor (APS) in MATLAB/Simulink tool. The analysis investigates the conversion of the light into an electrical signal for a single pixel sensing circuit, which consists of a photodiode and three NMOS transistors. The paper also proposes three modes for the pixel operation; reset, integration, and readout modes. The simulations of the electrical signals for each of the studied modes of operation show how the output electrical signals are correlated to the input light intensities. The charging/discharging speed for the photodiodes is also investigated. The output voltage for different light intensities, including in dark case, is calculated and showed its inverse proportionality with the light intensity.

Keywords: APS, CMOS image sensor, light intensities photodiode, simulation

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Authors: Debabrata Bhadra, B. K. Chaudhuri

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The operation of organic thin film transistors (OFETs) with low voltage is currently a prevailing issue. We have fabricated anthracene thin-film transistor (TFT) with an ultrathin layer (~450nm) of Poly-vinylidene fluoride (PVDF)/CuO nanocomposites as a gate insulator. We obtained a device with excellent electrical characteristics at low operating voltages (<1V). Different layers of the film were also prepared to achieve the best optimization of ideal gate insulator with various static dielectric constant (εr ). Capacitance density, leakage current at 1V gate voltage and electrical characteristics of OFETs with a single and multi layer films were investigated. This device was found to have highest field effect mobility of 2.27 cm2/Vs, a threshold voltage of 0.34V, an exceptionally low sub threshold slope of 380 mV/decade and an on/off ratio of 106. Such favorable combination of properties means that these OFETs can be utilized successfully as voltages below 1V. A very simple fabrication process has been used along with step wise poling process for enhancing the pyroelectric effects on the device performance. The output characteristic of OFET after poling were changed and exhibited linear current-voltage relationship showing the evidence of large polarization. The temperature dependent response of the device was also investigated. The stable performance of the OFET after poling operation makes it reliable in temperature sensor applications. Such High-ε CuO/PVDF gate dielectric appears to be highly promising candidates for organic non-volatile memory and sensor field-effect transistors (FETs).

Keywords: organic field effect transistors, thin film transistor, gate dielectric, organic semiconductor

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Authors: Pooja S. Billade, Sanjay S. Chopade

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This paper focuses on the design of three phase induction motor control using single phase input and GSM.The controller used in this work is a wireless speed control using a GSM technique that proves to be very efficient and reliable in applications.The most common principle is the constant V/Hz principle which requires that the magnitude and frequency of the voltage applied to the stator of a motor maintain a constant ratio. By doing this, the magnitude of the magnetic field in the stator is kept at an approximately constant level throughout the operating range. Thus, maximum constant torque producing capability is maintained. The energy that a switching power converter delivers to a motor is controlled by Pulse Width Modulated signals applied to the gates of the power transistors in H-bridge configuration. PWM signals are pulse trains with fixed frequency and magnitude and variable pulse width. When a PWM signal is applied to the gate of a power transistor, it causes the turn on and turns off intervals of the transistor to change from one PWM period.

Keywords: index terms— PIC, GSM (global system for mobile), LCD (Liquid Crystal Display), IM (Induction Motor)

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Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

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According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling

Procedia PDF Downloads 499

Authors: Mohamed S. El-Asfoury, Ahmed Abdel-Moneim, Mohamed N. A. Nasr

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The current study uses finite element modeling to investigate and analyze a modified form of the from the conventional equal channel multi-angular pressing (ECMAP), using non-equal channels, on the workpiece material plastic deformation. The modified process non-equal channel multi-angular extrusion (NECMAE) is modeled using two-dimensional plane strain finite element model built using the commercial software ABAQUS. The workpiece material used is pure aluminum. The model was first validated by comparing its results to analytical solutions for single-pass equal channel angular extrusion (ECAP), as well as previously published data. After that, the model was used to examine the effects of different % of reductions of the area (for the second stage) on material plastic deformation, corner gap, and required the load. Three levels of reduction in the area were modeled; 10%, 30%, and 50%, and compared to single-pass and double-pass ECAP. Cases with a higher reduction in the area were found to have smaller corner gaps, higher and much uniform plastic deformation, as well as higher required loads. The current results are mainly attributed to the back pressure effects exerted by the second stage, as well as strain hardening effects experienced during the first stage.

Keywords: non-equal channel angular extrusion, multi-pass, sever plastic deformation, back pressure, Finite Element Modelling (FEM)

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Authors: Ashwani Kumar

Abstract:

Abstract- This study presents an analytical modeling approach for analyzing the drain current behavior in Tunnel Field-Effect Transistor (TFET) biosensors used for the detection of DNA biomolecules. The proposed model focuses on elucidating the relationship between the drain current and the presence of DNA biomolecules, taking into account the impact of various device parameters and biomolecule characteristics. Through comprehensive analysis, the model offers insights into the underlying mechanisms governing the sensing performance of TFET biosensors, aiding in the optimization of device design and operation. A non-local tunneling model is incorporated with other essential models to accurately trace the simulation and modeled data. An experimental validation of the model is provided, demonstrating its efficacy in accurately predicting the drain current response to DNA biomolecule detection. The sensitivity attained from the analytical model is compared and contrasted with the ongoing research work in this area.

Keywords: biosensor, double-gate TFET, DNA detection, drain current modeling, sensitivity

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Authors: Ju-Hong Lee, Chong-Jia Ciou

Abstract:

This paper deals with the problem of two-dimensional (2-D) recursive two-channel quincunx quadrature mirror filter (QQMF) banks design. The analysis and synthesis filters of the 2-D recursive QQMF bank are composed of 2-D recursive digital allpass lattice filters (DALFs) with symmetric half-plane (SHP) support regions. Using the 2-D doubly complementary half-band (DC-HB) property possessed by the analysis and synthesis filters, we facilitate the design of the proposed QQMF bank. For finding the coefficients of the 2-D recursive SHP DALFs, we present a structure of 2-D recursive digital allpass filters by using 2-D SHP recursive digital all-pass lattice filters (DALFs). The novelty of using 2-D SHP recursive DALFs to construct a 2-D recursive QQMF bank is that the resulting 2-D recursive QQMF bank provides better performance than the existing 2-D recursive QQMF banks. Simulation results are also presented for illustration and comparison.

Keywords: all-pass digital filter, lattice structure, quincunx QMF bank, symmetric half-plane digital filter

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Authors: Vasilis C. Hristidis, Ricardo Caceda, Ji Soo Kim, Brian Bronson, Emily A. Hill

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Objective: Leave passes to provide authorized leave for hospitalized patients from a psychiatric inpatient unit. Though providing day passes was once a relatively common practice, there is relatively little data describing their safety and efficacy. Methods: This descriptive study examines the use of leave passes in an adult inpatient unit at a university hospital between 2017 and 2021, with attention to reasons for granting the day pass, duration, and outcome of the pass. Results: During the study period, ten patients with primary psychotic or mood disorders received 12 passes for either housing coordination, COVID-19 vaccination, or major family events. There were no fatalities or elopements. One patient experienced severe agitation and engaged in non-suicidal self-injurious behavior. A second patient showed mild, redirectable psychomotor agitation upon return to the unit. The remaining 10 passes were uneventful. Conclusions: Our findings support the view that patients with diverse diagnoses can safely be provided leave from an inpatient setting with adequate planning and support, yielding a low incidence of adverse events.

Keywords: passes, inpatient, psychiatry, inpatient leave, outcome

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Authors: Faruk Guven, Nurtekin Erkmen, Samet Aktas, Cengiz Taskin

Abstract:

The aim of this study was to determine effects of field sizes on technical parameters of small-sided games in football players. Eight amateur football players (27.23±3.08 years, heigth: 171.01±5.36 cm, body weigth: 66.86±4.54 kg, sports experience: 12.88±3.28 years) performed 4-a-side small-sided games (SSG) with different field sizes. In SSGs, field sizes were 30 x 40 m and 26 mx24 m. SSGs was conducted as a series of 3 bouts of 6 min with 5 min recovery durations. All SSGs were video recorded using two digital video camcorder positioned on a tripot. Shoot on taget, passes, succesful passes, unsuccesful passes, dripling, tackle, possession in SSGs were counted by Mathball Match Analysis System. The effects of bouts on technical score were examined separately using a Friedman’s test. Mann Whitney U test was applied to analyse differences between field sizes. There were no significant differences in shoots on target, total pass, successful pass, tackle, interception, possession between bouts in 30x40 m field size (p>0.05). Unsuccessful pass in bout 3 for 30x40 m field size was lower than bout 1 and bout 2 (p<0.05) and dripling in bout 3 was lower than bout 2 (p<0.05). There was no significant difference in technical actions between bouts for 26x34 m field size (p>0.05). Shoot on target in SSG with 26 x 34 m field size was higher than SSG with 30x40 m field size (p<0.05). Unsuccessful pass for 26x34 m field size in bout 3 was higher than SSG with 30x40 m field size (p<0.05). There was no significant difference in technical actions between field sizes (p>0.05). In conclusion; in this study demonstrates that technical actions in a-4-side SSG are not influenced by different field sizes (for 30x40 m and 26x34 m field sizes). This consequence is same for both total SSG time and each bout. Dripling and unsuccessful pass decrease in bout 3 during SSG in 30 x 40 m field size.

Keywords: small-sided games, football, technical actions, sport science

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Authors: Mohammed Berka, Khaled Merit

Abstract:

Recent works on microwave filters show that the constituent materials such filters are very important in the design and realization. Several solutions have been proposed to improve the qualities of filtering. In this paper, we propose a new dual band-pass filter based on the coupling of a composite (CRLH) coplanar waveguide with complementary split ring resonators (CSRRs). The (CRLH) CPW is composed of two resonators, each one has an interdigital capacitor (CID) and two short-circuited stubs parallel to top ground plane. On the lower ground plane, we use defected ground structure technology (DGS) to engrave two (CSRRs) offered with different shapes and dimensions. Between the top ground plane and the substrate, we place a ferrite layer to control the electromagnetic coupling between (CRLH) CPW and (CSRRs). The global filter that has coplanar access will have a dual band-pass behavior around the magnetic resonances of (CSRRs). Since there’s no scientific or experimental result in the literature for this kind of complicated structure, it was necessary to perform simulation using HFSS Ansoft designer.

Keywords: complementary split ring resonators, coplanar waveguide, ferrite, filter, stub.

Procedia PDF Downloads 378

Authors: Fahad Al-Mufadi, F. Djavanroodi

Abstract:

Ultrafine grained (UFG) and nanostructured (NS) materials have experienced a rapid development during the last decade and made profound impact on every field of materials science and engineering. The present work has been undertaken to develop ultra-fine grained pure copper by severe plastic deformation method and to examine the impact property by different characterizing tools. For this aim, equal channel angular pressing die with the channel angle, outer corner angle and channel diameter of 90°, 17° and 20 mm had been designed and manufactured. Commercial pure copper billets were ECAPed up to four passes by route BC at the ambient temperature. The results indicated that there is a great improvement at the hardness measurement, yield strength and ultimate tensile strength after ECAP process. It is found that the magnitudes of HV reach 136HV from 52HV after the final pass. Also, about 285% and 125% enhancement at the YS and UTS values have been obtained after the fourth pass as compared to the as-received conditions, respectively. On the other hand, the elongation to failure and impact energy have been reduced by imposing ECAP process and pass numbers. It is needed to say that about 56% reduction in the impact energy have been attained for the samples as contrasted to annealed specimens.

Keywords: SPD, ECAP, pure cu, impact property

Procedia PDF Downloads 235

Authors: Manasa Kalla, Narasimha Raju Chebrolu, Ashok Chatterjee

Abstract:

We have studied the quantum transport properties of a single molecular transistor in the presence of an external magnetic field using the Keldysh Green function technique. We also used the Anderson-Holstein-Caldeira-Leggett Model to describe the single molecular transistor that consists of a molecular quantum dot (QD) coupled to two metallic leads and placed on a substrate that acts as a heat bath. The phonons are eliminated by the Lang-Firsov transformation and the effective Hamiltonian is used to study the effect of an external magnetic field on the spectral density function, Tunneling Current, Differential Conductance and Spin polarization. A peak in the spectral function corresponds to a possible excitation. In the presence of a magnetic field, the spin-up and spin-down states are degenerate and this degeneracy is lifted by the magnetic field leading to the splitting of the central peak of the spectral function. The tunneling current decreases with increasing magnetic field. We have observed that even the differential conductance peak in the zero magnetic field curve is split in the presence electron-phonon interaction. As the magnetic field is increased, each peak splits into two peaks. And each peak indicates the existence of an energy level. Thus the number of energy levels for transport in the bias window increases with the magnetic field. In the presence of the electron-phonon interaction, Differential Conductance in general gets reduced and decreases faster with the magnetic field. As magnetic field strength increases, the spin polarization of the current is increasing. Our results show that a strongly interacting QD coupled to metallic leads in the presence of external magnetic field parallel to the plane of QD acts as a spin filter at zero temperature.

Keywords: Anderson-Holstein model, Caldeira-Leggett model, spin-polarization, quantum dots

Procedia PDF Downloads 152

Authors: Yuzman Yusoff, Siti Noor Harun, Noor Shelida Salleh, Tan Kong Yew

Abstract:

This paper presents the design and characterization of analog readout interface circuits for ion sensitive field effect transistor (ISFET) and ion selective electrode (ISE) based sensor. These interface circuits are implemented using MIMOS’s 0.35um CMOS technology and experimentally characterized under 24-leads QFN package. The characterization evaluates the circuit’s functionality, output sensitivity and output linearity. Commercial sensors for both ISFET and ISE are employed together with glass reference electrode during testing. The test result shows that the designed interface circuits manage to readout signals produced by both sensors with measured sensitivity of ISFET and ISE sensor are 54mV/pH and 62mV/decade, respectively. The characterized output linearity for both circuits achieves above 0.999 rsquare. The readout also has demonstrated reliable operation by passing all qualifications in reliability test plan.

Keywords: readout interface circuit (ROIC), analog interface circuit, ion sensitive field effect transistor (ISFET), ion selective electrode (ISE), ion sensor electronics

Procedia PDF Downloads 290