Search results for: gate leakage
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 551

Search results for: gate leakage

341 Numerical Study of Two Mechanical Stirring Systems for Yield Stress Fluid

Authors: Amine Benmoussa, Mebrouk Rebhi, Rahmani Lakhdar

Abstract:

Mechanically agitated vessels are commonly used for various operations within a wide range process in chemical, pharmaceutical, polymer, biochemical, mineral, petroleum industries. Depending on the purpose of the operation carried out in mixer, the best choice for geometry of the tank and agitator type can vary widely. In this paper, the laminar 2D agitation flow and power consumption of viscoplastic fluids with straight and circular gate impellers in a stirring tank is studied by using computational fluid dynamics (CFD), where the velocity profile, the velocity fields and power consumption was analyzed.

Keywords: CFD, mechanical stirring, power consumption, yield stress fluid

Procedia PDF Downloads 312
340 Intracranial Hypotension: A Brief Review of the Pathophysiology and Diagnostic Algorithm

Authors: Ana Bermudez de Castro Muela, Xiomara Santos Salas, Silvia Cayon Somacarrera

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The aim of this review is to explain what is the intracranial hypotension and its main causes, and also to approach to the diagnostic management in the different clinical situations, understanding radiological findings, and physiopathological substrate. An approach to the diagnostic management is presented: what are the guidelines to follow, the different tests available, and the typical findings. We review the myelo-CT and myelo-RM studies in patients with suspected CSF fistula or hypotension of unknown cause during the last 10 years in three centers. Signs of intracranial hypotension (subdural hygromas/hematomas, pachymeningeal enhancement, venous sinus engorgement, pituitary hyperemia, and lowering of the brain) that are evident in baseline CT and MRI are also sought. The intracranial hypotension is defined as a lower opening pressure of 6 cmH₂O. It is a relatively rare disorder with an annual incidence of 5 per 100.000, with a female to male ratio 2:1. The clinical features it’s an orthostatic headache, which is defined as development or aggravation of headache when patients move from a supine to an upright position and disappear or typically relieve after lay down. The etiology is a decrease in the amount of cerebrospinal fluid (CSF), usually by loss of it, either spontaneous or secondary (post-traumatic, post-surgical, systemic disease, post-lumbar puncture etc.) and rhinorrhea and/or otorrhea may exist. The pathophysiological mechanisms of hypotension and CSF hypertension are interrelated, as a situation of hypertension may lead to hypotension secondary to spontaneous CSF leakage. The diagnostic management of intracranial hypotension in our center includes, in the case of being spontaneous and without rhinorrhea and/or otorrhea and according to necessity, a range of available tests, which will be performed from less to more complex: cerebral CT, cerebral MRI and spine without contrast and CT/MRI with intrathecal contrast. If we are in a situation of intracranial hypotension with the presence of rhinorrhea/otorrhea, a sample can be obtained for the detection of b2-transferrin, which is found in the CSF physiologically, as well as sinus CT and cerebral MRI including constructive interference steady state (CISS) sequences. If necessary, cisternography studies are performed to locate the exact point of leakage. It is important to emphasize the significance of myelo-CT / MRI to establish the diagnosis and location of CSF leak, which is indispensable for therapeutic planning (whether surgical or not) in patients with more than one lesion or doubts in the baseline tests.

Keywords: cerebrospinal fluid, neuroradiology brain, magnetic resonance imaging, fistula

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339 Critical Investigation on Performance of Polymeric Materials in Rehabilitation of Metallic Components

Authors: Parastou Kharazmi

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Failure and leakage of metallic components because of corrosion in infrastructure structures is a considerably problematic and expensive issue and the traditional solution of replacing the component is costly and time-consuming. Rehabilitation techniques by using advanced polymeric materials are an alternative solution towards this problem. This paper provides a summary of analyses on relined rehabilitated metallic samples after exposure in practice and real condition to study the composite material performance when it is exposed to water, heat and chemicals in real condition. The study was carried out by using different test methods such as microscopy, thermal and chemical as well as mechanical analyses.

Keywords: composite, material, rehabilitation, structure

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338 Comparison between FEM Simulation and Experiment of Temperature Rise in Power Transformer Inner Steel Plate

Authors: Byung hyun Bae

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In power transformer, leakage magnetic flux generate temperature rise of inner steel plate. Sometimes, this temperature rise can be serious problem. If temperature of steel plate is over critical point, harmful gas will be generated in the tank. And this gas can be a reason of fire, explosion and life decrease. So, temperature rise forecasting of steel plate is very important at the design stage of power transformer. To improve accuracy of forecasting of temperature rise, comparison between simulation and experiment achieved in this paper.

Keywords: power transformer, steel plate, temperature rise, experiment, simulation

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337 Characteristics of Silicon Integrated Vertical Carbon Nanotube Field-Effect Transistors

Authors: Jingqi Li

Abstract:

A new vertical carbon nanotube field effect transistor (CNTFET) has been developed. The source, drain and gate are vertically stacked in this structure. The carbon nanotubes are put on the side wall of the vertical stack. Unique transfer characteristics which depend on both silicon type and the sign of drain voltage have been observed in silicon integrated CNTFETs. The significant advantage of this CNTFET is that the short channel of the transistor can be fabricated without using complicate lithography technique.

Keywords: carbon nanotubes, field-effect transistors, electrical property, short channel fabrication

Procedia PDF Downloads 322
336 Implementation of Iterative Algorithm for Earthquake Location

Authors: Hussain K. Chaiel

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The development in the field of the digital signal processing (DSP) and the microelectronics technology reduces the complexity of the iterative algorithms that need large number of arithmetic operations. Virtex-Field Programmable Gate Arrays (FPGAs) are programmable silicon foundations which offer an important solution for addressing the needs of high performance DSP designer. In this work, Virtex-7 FPGA technology is used to implement an iterative algorithm to estimate the earthquake location. Simulation results show that an implementation based on block RAMB36E1 and DSP48E1 slices of Virtex-7 type reduces the number of cycles of the clock frequency. This enables the algorithm to be used for earthquake prediction.

Keywords: DSP, earthquake, FPGA, iterative algorithm

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335 Pre-Shared Key Distribution Algorithms' Attacks for Body Area Networks: A Survey

Authors: Priti Kumari, Tricha Anjali

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Body Area Networks (BANs) have emerged as the most promising technology for pervasive health care applications. Since they facilitate communication of very sensitive health data, information leakage in such networks can put human life at risk, and hence security inside BANs is a critical issue. Safe distribution and periodic refreshment of cryptographic keys are needed to ensure the highest level of security. In this paper, we focus on the key distribution techniques and how they are categorized for BAN. The state-of-art pre-shared key distribution algorithms are surveyed. Possible attacks on algorithms are demonstrated with examples.

Keywords: attacks, body area network, key distribution, key refreshment, pre-shared keys

Procedia PDF Downloads 334
334 Thermal Effect in Power Electrical for HEMTs Devices with InAlN/GaN

Authors: Zakarya Kourdi, Mohammed Khaouani, Benyounes Bouazza, Ahlam Guen-Bouazza, Amine Boursali

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In this paper, we have evaluated the thermal effect for high electron mobility transistors (HEMTs) heterostructure InAlN/GaN with a gate length 30nm high-performance. It also shows the analysis and simulated these devices, and how can be used in different application. The simulator Tcad-Silvaco software has used for predictive results good for the DC, AC and RF characteristic, Devices offered max drain current 0.67A; transconductance is 720 mS/mm the unilateral power gain of 180 dB. A cutoff frequency of 385 GHz, and max frequency 810 GHz These results confirm the feasibility of using HEMTs with InAlN/GaN in high power amplifiers, as well as thermal places.

Keywords: HEMT, Thermal Effect, Silvaco, InAlN/GaN

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333 Design and Implementation of Wave-Pipelined Circuit Using Reconfigurable Technique

Authors: Adhinarayanan Venkatasubramanian

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For design of high speed digital circuit wave pipeline is the best approach this can be operated at higher operating frequencies by adjusting clock periods and skews so as latch the o/p of combinational logic circuit at the stable period. In this paper, there are two methods are proposed in automation task one is BIST (Built in self test) and second method is Reconfigurable technique. For the above two approaches dedicated AND gate (multiplier) by applying wave pipeline technique. BIST approach is implemented by Xilinx Spartan-II device. In reconfigurable technique done by ASIC. From the results, wave pipeline circuits are faster than nonpipeline circuit and area, power dissipation are reduced by reconfigurable technique.

Keywords: SOC, wave-pipelining, FPGA, self-testing, reconfigurable, ASIC

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332 The Influence of Morphology and Interface Treatment on Organic 6,13-bis (triisopropylsilylethynyl)-Pentacene Field-Effect Transistors

Authors: Daniel Bülz, Franziska Lüttich, Sreetama Banerjee, Georgeta Salvan, Dietrich R. T. Zahn

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For the development of electronics, organic semiconductors are of great interest due to their adjustable optical and electrical properties. Especially for spintronic applications they are interesting because of their weak spin scattering, which leads to longer spin life times compared to inorganic semiconductors. It was shown that some organic materials change their resistance if an external magnetic field is applied. Pentacene is one of the materials which exhibit the so called photoinduced magnetoresistance which results in a modulation of photocurrent when varying the external magnetic field. Also the soluble derivate of pentacene, the 6,13-bis (triisopropylsilylethynyl)-pentacene (TIPS-pentacene) exhibits the same negative magnetoresistance. Aiming for simpler fabrication processes, in this work, we compare TIPS-pentacene organic field effect transistors (OFETs) made from solution with those fabricated by thermal evaporation. Because of the different processing, the TIPS-pentacene thin films exhibit different morphologies in terms of crystal size and homogeneity of the substrate coverage. On the other hand, the interface treatment is known to have a high influence on the threshold voltage, eliminating trap states of silicon oxide at the gate electrode and thereby changing the electrical switching response of the transistors. Therefore, we investigate the influence of interface treatment using octadecyltrichlorosilane (OTS) or using a simple cleaning procedure with acetone, ethanol, and deionized water. The transistors consist of a prestructured OFET substrates including gate, source, and drain electrodes, on top of which TIPS-pentacene dissolved in a mixture of tetralin and toluene is deposited by drop-, spray-, and spin-coating. Thereafter we keep the sample for one hour at a temperature of 60 °C. For the transistor fabrication by thermal evaporation the prestructured OFET substrates are also kept at a temperature of 60 °C during deposition with a rate of 0.3 nm/min and at a pressure below 10-6 mbar. The OFETs are characterized by means of optical microscopy in order to determine the overall quality of the sample, i.e. crystal size and coverage of the channel region. The output and transfer characteristics are measured in the dark and under illumination provided by a white light LED in the spectral range from 450 nm to 650 nm with a power density of (8±2) mW/cm2.

Keywords: organic field effect transistors, solution processed, surface treatment, TIPS-pentacene

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331 Understand and Redefine Lean Product Development

Authors: Alemu Moges Belay, Torgeir Welo, Jan Ola Strandhagen

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Lean has long been linked with manufacturing, but its application claimed also by other functions such as product development and services. However, there is a challenge on understanding and defining lean in each function context. This paper aims to investigate the literature that focus mainly on PD process improvement, obtain better understanding and redefine LPD in systematic way. In addition to that, the paper attempts to summarize various proposed transformation strategies, definitions, identifying features of manufacturing and product development that would help to redefining lean in product development context. Finally we redefine LPD in organized way that encompasses different steps such as stage gate, communication and information, events, learning, innovation, knowledge and value creation.

Keywords: lean, lean manufacturing, lean product development, transformation, strategies

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330 A Machine Learning Approach for the Leakage Classification in the Hydraulic Final Test

Authors: Christian Neunzig, Simon Fahle, Jürgen Schulz, Matthias Möller, Bernd Kuhlenkötter

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The widespread use of machine learning applications in production is significantly accelerated by improved computing power and increasing data availability. Predictive quality enables the assurance of product quality by using machine learning models as a basis for decisions on test results. The use of real Bosch production data based on geometric gauge blocks from machining, mating data from assembly and hydraulic measurement data from final testing of directional valves is a promising approach to classifying the quality characteristics of workpieces.

Keywords: machine learning, classification, predictive quality, hydraulics, supervised learning

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329 Simulation of High Performance Nanoscale Partially Depleted SOI n-MOSFET Transistors

Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

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Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, kink effect

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328 PSRR Enhanced LDO Regulator Using Noise Sensing Circuit

Authors: Min-ju Kwon, Chae-won Kim, Jeong-yun Seo, Hee-guk Chae, Yong-seo Koo

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In this paper, we presented the LDO (low-dropout) regulator which enhanced the PSRR by applying the constant current source generation technique through the BGR (Band Gap Reference) to form the noise sensing circuit. The current source through the BGR has a constant current value even if the applied voltage varies. Then, the noise sensing circuit, which is composed of the current source through the BGR, operated between the error amplifier and the pass transistor gate of the LDO regulator. As a result, the LDO regulator has a PSRR of -68.2 dB at 1k Hz, -45.85 dB at 1 MHz and -45 dB at 10 MHz. the other performance of the proposed LDO was maintained at the same level of the conventional LDO regulator.

Keywords: LDO regulator, noise sensing circuit, current reference, pass transistor

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327 Three Phase PWM Inverter for Low Rating Energy Efficient Systems

Authors: Nelson Lujara

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The paper presents a practical three-phase PWM inverter suitable for low voltage, low rating energy efficient systems. The work in the paper is conducted with the view to establishing the significance of the loss contribution from the PWM inverter in the determination of the complete losses of a photovoltaic (PV) array-powered induction motor drive water pumping system. Losses investigated include; conduction and switching loss of the devices and gate drive losses. It is found that the PWM inverter operates at a reasonable variable efficiency that does not fall below 92% depending on the load. The results between the simulated and experimental results for the system with or without a maximum power tracker (MPT) compares very well, within an acceptable range of 2% margin.

Keywords: energy, inverter, losses, photovoltaic

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326 Effects of Vertimax Training on Agility, Quickness and Acceleration

Authors: Dede Basturk, Metin Kaya, Halil Taskin, Nurtekin Erkmen

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In total, 29 students studying in Selçuk University Physical Training and Sports School who are recreationally active participated voluntarilyin this study which was carried out in order to examine effects of Vertimax trainings on agility, quickness and acceleration. 3 groups took their parts in this study as Vertimax training group (N=10), Ordinary training group (N=10) and Control group (N=9). Measurements were carried out in performance laboratory of Selçuk University Physical Training and Sports School. A training program for quickness and agility was followed up for subjects 3 days a week (Monday, Wednesday, Friday) for 8 weeks. Subjects taking their parts in vertimax training group and ordinary training group participated in the training program for quickness and agility. Measurements were applied as pre-test and post-test. Subjects of vertimax training group followed the training program with vertimax device and subjects of ordinary training group followed the training program without vertimax device. As to control group who are recreationally active, they did not participate in any program. 4 gate photocells were used for measuring and measurement of distances was carried out in m. Furthermore, single gate photocell and honi were used for agility test. Measurements started with 15 minutes of warm-up. Acceleration, quickness and agility tests were applied on subjects. 3 measurements were made for each subject at 3 minutes resting intervals. The best rating of three measurements was recorded. 5 m quickness pre-test value of vertimax training groups has been determined as 1,11±0,06 s and post-test value has been determined as 1,06 ± 0,08 s (P<0,05). 5 m quickness pre-test value of ordinary training group has been determined as 1,11±0,06 s and post-test value has been determined as 1,07±0,07 s (P<0,05).5 m quickness pre-test value of control group has been determined as 1,13±0,08 s and post-test value has been determined as 1,10 ± 0,07 s (P>0,05). Upon examination of 10 m acceleration value before and after the training, 10 m acceleration pre-test value of vertimax training group has been determined as 1,82 ± 0,07 s and post-test value has been determined as 1,76±0,83 s (P>0,05). 10 m acceleration pre-test value of ordinary training group has been determined as 1,83±0,05 s and post-test value has been determined as 1,78 ± 0,08 s (P>0,05).10 m acceleration pre-test value of control group has been determined as 1,87±0,11 s and post-test value has been determined as 1,83 ± 0,09 s (P>0,05). Upon examination of 15 m acceleration value before and after the training, 15 m acceleration pre-test value of vertimax training group has been determined as 2,52±0,10 s and post-test value has been determined as 2,46 ± 0,11 s (P>0,05).15 m acceleration pre-test value of ordinary training group has been determined as 2,52±0,05 s and post-test value has been determined as 2,48 ± 0,06 s (P>0,05). 15 m acceleration pre-test value of control group has been determined as 2,55 ± 0,11 s and post-test value has been determined as 2,54 ± 0,08 s (P>0,05).Upon examination of agility performance before and after the training, agility pre-test value of vertimax training group has been determined as 9,50±0,47 s and post-test value has been determined as 9,66 ± 0,47 s (P>0,05). Agility pre-test value of ordinary training group has been determined as 9,99 ± 0,05 s and post-test value has been determined as 9,86 ± 0,40 s (P>0,05). Agility pre-test value of control group has been determined as 9,74 ± 0,45 s and post-test value has been determined as 9,92 ± 0,49 s (P>0,05). Consequently, it has been observed that quickness and acceleration features were developed significantly following 8 weeks of vertimax training program and agility features were not developed significantly. It is suggested that training practices used for the study may be used for situations which may require sudden moves and in order to attain the maximum speed in a short time. Nevertheless, it is also suggested that this training practice does not make contribution in development of moves which may require sudden direction changes. It is suggested that productiveness and innovation may come off in terms of training by using various practices of vertimax trainings.

Keywords: vertimax, training, quickness, agility, acceleration

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325 Case Study of Mechanised Shea Butter Production in South-Western Nigeria Using the LCA Approach from Gate-to-Gate

Authors: Temitayo Abayomi Ewemoje, Oluwamayowa Oluwafemi Oluwaniyi

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Agriculture and food processing, industry are among the largest industrial sectors that uses large amount of energy. Thus, a larger amount of gases from their fuel combustion technologies is being released into the environment. The choice of input energy supply not only directly having affects the environment, but also poses a threat to human health. The study was therefore designed to assess each unit production processes in order to identify hotspots using life cycle assessments (LCA) approach in South-western Nigeria. Data such as machine power rating, operation duration, inputs and outputs of shea butter materials for unit processes obtained at site were used to modelled Life Cycle Impact Analysis on GaBi6 (Holistic Balancing) software. Four scenarios were drawn for the impact assessments. Material sourcing from Kaiama, Scenarios 1, 3 and Minna Scenarios 2, 4 but different heat supply sources (Liquefied Petroleum Gas ‘LPG’ Scenarios 1, 2 and 10.8 kW Diesel Heater, scenarios 3, 4). Modelling of shea butter production on GaBi6 was for 1kg functional unit of shea butter produced and the Tool for the Reduction and Assessment of Chemical and other Environmental Impacts (TRACI) midpoint assessment was tool used to was analyse the life cycle inventories of the four scenarios. Eight categories in all four Scenarios were observed out of which three impact categories; Global Warming Potential (GWP) (0.613, 0.751, 0.661, 0.799) kg CO2¬-Equiv., Acidification Potential (AP) (0.112, 0.132, 0.129, 0.149) kg H+ moles-Equiv., and Smog (0.044, 0.059, 0.049, 0.063) kg O3-Equiv., categories had the greater impacts on the environment in Scenarios 1-4 respectively. Impacts from transportation activities was also seen to contribute more to these environmental impact categories due to large volume of petrol combusted leading to releases of gases such as CO2, CH4, N2O, SO2, and NOx into the environment during the transportation of raw shea kernel purchased. The ratio of transportation distance from Minna and Kaiama to production site was approximately 3.5. Shea butter unit processes with greater impacts in all categories was the packaging, milling and with the churning processes in ascending order of magnitude was identified as hotspots that may require attention. From the 1kg shea butter functional unit, it was inferred that locating production site at the shortest travelling distance to raw material sourcing and combustion of LPG for heating would reduce all the impact categories assessed on the environment.

Keywords: GaBi6, Life cycle assessment, shea butter production, TRACI

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324 Improved Qualitative Modeling of the Magnetization Curve B(H) of the Ferromagnetic Materials for a Transformer Used in the Power Supply for Magnetron

Authors: M. Bassoui, M. Ferfra, M. Chrayagne

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This paper presents a qualitative modeling for the nonlinear B-H curve of the saturable magnetic materials for a transformer with shunts used in the power supply for the magnetron. This power supply is composed of a single phase leakage flux transformer supplying a cell composed of a capacitor and a diode, which double the voltage and stabilize the current, and a single magnetron at the output of the cell. A procedure consisting of a fuzzy clustering method and a rule processing algorithm is then employed for processing the constructed fuzzy modeling rules to extract the qualitative properties of the curve.

Keywords: B(H) curve, fuzzy clustering, magnetron, power supply

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323 Electrical Characteristics of SiON/GaAs MOS Capacitor with Various Passivations

Authors: Ming-Kwei Lee, Chih-Feng Yen

Abstract:

The electrical characteristics of liquid phase deposited silicon oxynitride film on ammonium sulfide treated p-type (100) gallium arsenide substrate were investigated. Hydrofluosilicic acid, ammonia and boric acid aqueous solutions were used as precursors. The electrical characteristics of silicon oxynitride film are much improved on gallium arsenide substrate with ammonium sulfide treatment. With post-metallization annealing, hydrogen ions can further passivate defects in SiON/GaAs film and interface. The leakage currents can reach 7.1 × 10-8 and 1.8 × 10-7 at ± 2 V. The dielectric constant and effective oxide charges are 5.6 and -5.3 × 1010 C/cm2, respectively. The hysteresis offset of hysteresis loop is merely 0.09 V.

Keywords: liquid phase deposition, SiON, GaAs, PMA, (NH4)2S

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322 A Single Switch High Step-Up DC/DC Converter with Zero Current Switching Condition

Authors: Rahil Samani, Saeed Soleimani, Ehsan Adib, Majid Pahlevani

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This paper presents an inverting high step-up DC/DC converter. Basically, this high step-up DC/DC converter is an appealing interface for solar applications. The proposed topology takes advantage of using coupled inductors. Due to the leakage inductances of these coupled inductors, the power MOSFET has the zero current switching (ZCS) condition, which results in decreased switching losses. This will substantially improve the overall efficiency of the power converter. Furthermore, employing coupled inductors has led to a higher voltage gain. Theoretical analysis and experimental results of a 100W 20V/220V prototype are presented to verify the superior performance of the proposed DC/DC converter.

Keywords: coupled inductors, high step-up DC/DC converter, zero-current switching, Cuk converter, SEPIC converter

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321 Polydopamine Nanoparticle as a Stable and Capacious Nano-Reservoir of Rifampicin

Authors: Tasnuva Tamanna, Aimin Yu

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Application of nanoscience in biomedical field has come across as a new era. This study involves the synthesis of nano drug carrier with antibiotic loading. Based on the founding that polydopamine (PDA) nanoparticles could be formed via self-polymerization of dopamine at alkaline pH, one-step synthesis of rifampicin coupled polydopamine (PDA-R) nanoparticles was achieved by adding rifampicin into the dopamine solution. The successful yield of PDA nanoparticles with or without the presence of rifampicin during the polymerization process was characterized by scanning electron microscopy, Fourier transform infrared spectroscopy, and Raman spectroscopy. Drug loading was monitored by UV-vis spectroscopy and the loading efficiency of rifampicin was calculated to be 76%. Such highly capacious nano-reservoir was found very stable with little drug leakage at pH 3.

Keywords: drug loading, nanoparticles, polydopamine, rifampicin

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320 Power MOSFET Models Including Quasi-Saturation Effect

Authors: Abdelghafour Galadi

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In this paper, accurate power MOSFET models including quasi-saturation effect are presented. These models have no internal node voltages determined by the circuit simulator and use one JFET or one depletion mode MOSFET transistors controlled by an “effective” gate voltage taking into account the quasi-saturation effect. The proposed models achieve accurate simulation results with an average error percentage less than 9%, which is an improvement of 21 percentage points compared to the commonly used standard power MOSFET model. In addition, the models can be integrated in any available commercial circuit simulators by using their analytical equations. A description of the models will be provided along with the parameter extraction procedure.

Keywords: power MOSFET, drift layer, quasi-saturation effect, SPICE model

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319 Proposal of a Model Supporting Decision-Making on Information Security Risk Treatment

Authors: Ritsuko Kawasaki, Takeshi Hiromatsu

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Management is required to understand all information security risks within an organization, and to make decisions on which information security risks should be treated in what level by allocating how much amount of cost. However, such decision-making is not usually easy, because various measures for risk treatment must be selected with the suitable application levels. In addition, some measures may have objectives conflicting with each other. It also makes the selection difficult. Therefore, this paper provides a model which supports the selection of measures by applying multi-objective analysis to find an optimal solution. Additionally, a list of measures is also provided to make the selection easier and more effective without any leakage of measures.

Keywords: information security risk treatment, selection of risk measures, risk acceptance, multi-objective optimization

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318 Effect of Inductance Ratio on Operating Frequencies of a Hybrid Resonant Inverter

Authors: Mojtaba Ghodsi, Hamidreza Ziaifar, Morteza Mohammadzaheri, Payam Soltani

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In this paper, the performance of a medium power (25 kW/25 kHz) hybrid inverter with a reactive transformer is investigated. To analyze the sensitivity of the inverster, the RSM technique is employed to manifest the effective factors in the inverter to minimize current passing through the Insulated Bipolar Gate Transistors (IGBTs) (current stress). It is revealed that the ratio of the axillary inductor to the effective inductance of resonant inverter (N), is the most effective parameter to minimize the current stress in this type of inverter. In practice, proper selection of N mitigates the current stress over IGBTs by five times. This reduction is very helpful to keep the IGBTs at normal temperatures.

Keywords: analytical analysis, hybrid resonant inverter, reactive transformer, response surface method

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317 Non-Destructive Visual-Statistical Approach to Detect Leaks in Water Mains

Authors: Alaa Al Hawari, Mohammad Khader, Tarek Zayed, Osama Moselhi

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In this paper, an effective non-destructive, non-invasive approach for leak detection was proposed. The process relies on analyzing thermal images collected by an IR viewer device that captures thermo-grams. In this study a statistical analysis of the collected thermal images of the ground surface along the expected leak location followed by a visual inspection of the thermo-grams was performed in order to locate the leak. In order to verify the applicability of the proposed approach the predicted leak location from the developed approach was compared with the real leak location. The results showed that the expected leak location was successfully identified with an accuracy of more than 95%.

Keywords: thermography, leakage, water pipelines, thermograms

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316 Failure Localization of Bipolar Integrated Circuits by Implementing Active Voltage Contrast

Authors: Yiqiang Ni, Xuanlong Chen, Enliang Li, Linting Zheng, Shizheng Yang

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Bipolar ICs are playing an important role in military applications, mainly used in logic gates, such as inverter and NAND gate. The defect of metal break located on the step is one of the main failure mechanisms of bipolar ICs, resulting in open-circuit or functional failure. In this situation, general failure localization methods like optical beam-induced resistance change (OBIRCH) and photon emission microscopy (PEM) might not be fully effective. However, active voltage contrast (AVC) can be used as a voltage probe, which may pinpoint the incorrect potential and thus locate the failure position. Two case studies will be present in this paper on how to implement AVC for failure localization, and the detailed failure mechanism will be discussed.

Keywords: bipolar IC, failure localization, metal break, open failure, voltage contrast

Procedia PDF Downloads 255
315 AC Voltage Regulators Using Single Phase Matrix Converter

Authors: Nagaraju Jarugu, B. R. Narendra

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This paper focused on boost rectification by Single Phase Matrix Converter with fewer numbers of switches. The conventional matrix converter consists of 4 bidirectional switches, i.e. 8 set of IGBT/MOSFET with anti-parallel diodes. In this proposed matrix converter, only six switches are used. The switch commutation arrangements are also carried out in this work. The SPMC topology has many advantages as a minimal passive device use. It is very flexible and it can be used as a lot of converters. The gate pulses to the switches are provided by the PWM techniques. The duty ratio of the switches based on Pulse Width Modulation (PWM) technique was used to produce the output waveform of the circuit, simply by turning ON and OFF the switches. The simulation results using MATLAB/Simulink were provided to validate the feasibility of this proposed method.

Keywords: single phase matrix converter, reduced switches, AC voltage regulators, boost rectifier operation

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314 Effect of Melatonin on Seed Germination and Seedling Growth of Catharanthus roseus under Cadmium Stress

Authors: Rayhaneh Amooaghaie, Masoomeh Nabaei

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In this study, 200 µM Cd reduced relative seed germination, root elongation tolerance and seed germination tolerance index of Catharanthus roseus. The melatonin improved seed germination, germination velocity, seedling length and vigor index under Cd stress in a dose-dependent manner and the maximum biological responses obtained by 100 μM melatonin. However, 200-400 μM melatonin and 400 μM SNP had negative effects that evidenced as lower germination indices and poor establishment of seedlings. The cadmium suppressed amylase activity and contents of soluble and reducing sugars in germinating seeds, thereby reduced seed germination and subsequent seedling growth whereas increased electrolyte leakage. These Cd-induced inhibitory effects were ameliorated by melatonin.

Keywords: cadmium, Catharanthus roseus, melatonin, seed germination

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313 Different Cathode Buffer Layers in Organic Solar Cells

Authors: Radia Kamel

Abstract:

Considerable progress has been made in the development of bulk-heterojunction organic solar cells (OSCs) based on a blend of p-type and n-type organic semiconductors. To optimize the interfacial properties between the active layer and the electrode, a cathode buffer layer (CBL) is introduced. This layer can reduce the leakage current, increasing the open-circuit voltage and the fill factor while improving the OSC stability. In this work, the performance of PM6:Y6 OSC with 1-Chloronaphthalene as an additive is examined. To accomplish this, three CBLs PNDIT-F3N-Br, ZrAcac, and PDINO, are compared using the conventional configuration. The device with PNDIT-F3N-Br as CBL exhibits the highest power conversion efficiency of 16.04%. The results demonstrate that modifying the cathode buffer layer is crucial for achieving high-performance OSCs.

Keywords: bulk heterojunction, cathode buffer layer, efficiency, organic solar cells

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312 Current of Drain for Various Values of Mobility in the Gaas Mesfet

Authors: S. Belhour, A. K. Ferouani, C. Azizi

Abstract:

In recent years, a considerable effort (experience, numerical simulation, and theoretical prediction models) has characterised by high efficiency and low cost. Then an improved physics analytical model for simulating is proposed. The performance of GaAs MESFETs has been developed for use in device design for high frequency. This model is based on mathematical analysis, and a new approach for the standard model is proposed, this approach allowed to conceive applicable model for MESFET’s operating in the turn-one or pinch-off region and valid for the short-channel and the long channel MESFET’s in which the two dimensional potential distribution contributed by the depletion layer under the gate is obtained by conventional approximation. More ever, comparisons between the analytical models with different values of mobility are proposed, and a good agreement is obtained.

Keywords: analytical, gallium arsenide, MESFET, mobility, models

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