Search results for: Zakarya Kourdi

Authors: Zakarya Kourdi, Mohammed Khaouani, Benyounes Bouazza, Ahlam Guen-Bouazza, Amine Boursali

Abstract:

In this paper, we have evaluated the thermal effect for high electron mobility transistors (HEMTs) heterostructure InAlN/GaN with a gate length 30nm high-performance. It also shows the analysis and simulated these devices, and how can be used in different application. The simulator Tcad-Silvaco software has used for predictive results good for the DC, AC and RF characteristic, Devices offered max drain current 0.67A; transconductance is 720 mS/mm the unilateral power gain of 180 dB. A cutoff frequency of 385 GHz, and max frequency 810 GHz These results confirm the feasibility of using HEMTs with InAlN/GaN in high power amplifiers, as well as thermal places.

Keywords: HEMT, Thermal Effect, Silvaco, InAlN/GaN

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Authors: A. boursali, A. Guen Bouazza, M. Khaouani, Z. Kourdi, B. Bouazza

Abstract:

This paper presents the design, development and characterization of the devices simulation for X-Band Radar applications. The effect of an InAlN/GaN structure on the RF performance High Electron Mobility Transistor (HEMT) device. Systematic investigations on the small signal as well as power performance as functions of the drain biases are presented. Were improved for X-band applications. The Power Added Efficiency (PAE) was achieved over 23% for X-band. The developed devices combine two InAlN/GaN HEMTs of 30nm gate periphery and exhibited the output power of over 50W. An InAlN/GaN HEMT with 30nm gate periphery was developed and exhibited the output power of over 120W.

Keywords: InAlN/GaN, HEMT, RF analyses, PAE, X-Band, radar

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Authors: Z. Kourdi, B. Bouazza, M. Khaouani, A. Guen-Bouazza, Z. Djennati, A. Boursali

Abstract:

We present a simulation of a HEMT (high electron mobility transistor) structure with and without a field plate. We extract the device characteristics through the analysis of DC, AC and high frequency regimes, as shown in this paper. This work demonstrates the optimal device with a gate length of 15 nm, InAlN/GaN heterostructure and field plate structure, making it superior to modern HEMTs when compared with otherwise equivalent devices. This improves the ability to bear the burden of the current density passes in the channel. We have demonstrated an excellent current density, as high as 2.05 A/mm, a peak extrinsic transconductance of 590 mS/mm at VDS=2 V, and cutting frequency cutoffs of 638 GHz in the first HEMT and 463 GHz for Field plate HEMT., maximum frequency of 1.7 THz, maximum efficiency of 73%, maximum breakdown voltage of 400 V, DIBL=33.52 mV/V and an ON/OFF current density ratio higher than 1 x 1010. These values were determined through the simulation by deriving genetic and Monte Carlo algorithms that optimize the design and the future of this technology.

Keywords: HEMT, Silvaco, field plate, genetic algorithm, quantum

Procedia PDF Downloads 435

Authors: Ziani Zakarya, Mahdad Moustafa Yassine

Abstract:

Greenhouse farming has greatly contributed to the development of modern agriculture by optimizing crops, especially market gardening, ornamental horticulture, and recently, fruit species ... Greenhouse cultivation has enabled farmers to produce fruits and vegetables out of season while guaranteeing them a good production, and therefore a considerable gain throughout the year. However, this mode of production has shown its limits, especially in extreme conditions, such as the continental steppe climate and the Saharan climate, which are characterized by significant thermal amplitudes and strong winds, making it impossible to use conventional greenhouses for several months, of the year. In Algeria and precisely in the highlands, the use of greenhouses by farmers is very rare or occasional, especially in spring, because the limiting factors mentioned above are frequent there, causing significant damage to the plant product and to the environment. infrastructure. The same observation is observed in the Saharan regions but with less frequencies. Certainly, the use of controlled multi-chapel greenhouses would solve the problem, but at what cost? These hi-tech infrastructures are very expensive to purchase but also to maintain, so few farmers have the financial means to obtain them. In addition, the existence of intelligent and less expensive polymer films, whose properties could control greenhouse production parameters, in particular, the temperature parameter, maybe a judicious solution for the development of new generations of greenhouses that can be used in extreme conditions and normal.

Keywords: greenhouse, polymer film, modern agriculture, optimizing crops

Procedia PDF Downloads 137