Search results for: Surface and interface recombination velocity.GaInAsSb active layer
Commenced in January 2007
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Edition: International
Paper Count: 13104

Search results for: Surface and interface recombination velocity.GaInAsSb active layer

13104 Thermal Annealing Effects on Minority Carrier Lifetime in GaInAsSb/GaSb by Means of Photothermal Defletion Technique

Authors: Souha Bouagila, Soufiene Ilahi

Abstract:

Photothermal deflection technique PTD have been employed to study the impact of thermal annealing on minority carrier in GaInAsSb grown on GaSb substarte, which used as an active layer for Vertical Cavity Surface Emitting laser (VCSEL). Photothermal defelction technique is nondescructive and accurate technique for electronics parameters determination. The measure of non-radiative recombination, electronic diffusivity, surface and interface recombination are effectuated by fitting the theoretical PTD signal to the experimental ones. As a results, we have found that Non-radiative lifetime increases from 3.8 µs (± 3, 9 %) for not annealed GaInAsSb to the 7.1 µs (± 5, 7%). In fact, electronic diffusivity D increased from 60.1 (± 3.9 %) to 89.6 cm2 / s (± 2.7%) for the as grown to that annealed for 60 min respectively. We have remarked that surface recombination velocity (SRV) decreases from 7963 m / s (± 6.3%) to 1450 m / s (± 3.6).

Keywords: nonradiative lifetime, mobility of minority carrier, diffusion length, Surface and interface recombination velocity.GaInAsSb active layer

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13103 Thermal Annealing Effects on Nonradiative Recombination Parameters of GaInAsSb/GaSb by Means of Photothermal Defection Technique

Authors: Souha Bouagila, Soufiene Ilahi, Noureddine Yacoubi

Abstract:

We have used Photothermal deflection spectroscopy PTD to investigate the impact of thermal annealing on electronics properties of GaInAsSb/GaSb.GaInAsSb used as an active layer for Vertical Cavity Surface Emitting laser (VCSEL). We have remarked that surface recombination velocity (SRV) from 7963 m / s (± 6.3%) to 1450 m / s (± 3.6) for as grown to sample annealed for 60 min. Accordingly, Force Microscopy images analyses agree well with the measure of surface recombination velocity. We have found that Root-Mean-Square Roughness (RMS) decreases as respect of annealing time. In addition, we have that the diffusion length and minority carrier mobility have been enhanced according to annealing time. However, due to annealing effects, the interface recombination velocity (IRV) is increased from 1196 m / s (± 5) to 6000 m/s (5%) for GaInAsSb in respect of annealed times.

Keywords: nonradiative lifetime, mobility of minority carrier, diffusion length, Surface and interface recombination velocity

Procedia PDF Downloads 45
13102 Comparison of the Performance of GaInAsSb and GaSb Cells under Different Temperature Blackbody Radiations

Authors: Liangliang Tang, Chang Xu, Xingying Chen

Abstract:

GaInAsSb cells probably show better performance than GaSb cells in low-temperature thermophotovoltaic systems due to lower bandgap; however, few experiments proved this phenomenon so far. In this paper, numerical simulation is used to evaluate GaInAsSb and GaSb cells with similar structures under different radiation temperatures. We found that GaInAsSb cells with n-type emitters show slightly higher output power densities compared with that of GaSb cells with n-type emitters below 1,550 K-blackbody radiation, and the power density of the later cells will suppress the formers above this temperature point. During the temperature range of 1,000~2,000 K, the efficiencies of GaSb cells are about twice of GaInAsSb cells if perfect filters are used to prevent the emission of the non-absorbed long wavelength photons. Several parameters that affect the GaInAsSb cell were analyzed, such as doping profiles, thicknesses of GaInAsSb epitaxial layer and surface recombination velocity. The non-p junctions, i.e., n-type emitters are better for GaInAsSb cell fabrication, which is similar to that of GaSb cells.

Keywords: thermophotovoltaic cell, GaSb, GaInAsSb, diffused emitters

Procedia PDF Downloads 239
13101 Thermal Conductivity and Optical Absorption of GaInAsSb/GaSb Laser Structure: Impact of Annealing Time

Authors: Soufiene Ilahi, Noureddine Yacoubi

Abstract:

GaInAsSb grown on GaSb substrate is an interesting material employed as an active layer in vertical-cavity surface-emitting lasers (VCSELs) operating in mid-infrared emission. This material presents some advantages like highs optical absorption coefficient and good thermal conductivity, which is very desirable for VCSEL application. In this paper, we have investigated the effects of thermal annealing on optical properties and thermal conductivity of GaInAsSb/GaSb. The studies are carried out by means of the photo thermal deflection spectroscopy technique (PDS). In fact, optical absorption spectrum and thermal conductivity have been determined by a comparison between the experimental and theoretical phases of the PDS signal. We have found that thermal conductivity increased significantly to 13 W/m.K for GaInAsSb annealed during 60 min. In addition, we have found that bandgap energy is blue-shifted around 30 meV. The amplitudes signal of PDS reveals multiple reflections as a function of annealing time, which reflect the high crystalline quality of the layer.

Keywords: thermal conductivity, bandgap energy of GaInAsSb, GaInAsSb active layer, optical absorption

Procedia PDF Downloads 115
13100 Investigation of Doping Effects on Nonradiative Recombination Parameters in Bulk GaAs

Authors: Soufiene Ilahi

Abstract:

We have used Photothermal deflection spectroscopy PTD to investigate the impact of doping on electronics properties of bulk. Then, the extraction of these parameters is performed by fitting the theoretical curves to the experimental PTD ones. We have remarked that electron mobility in p type C-doped GaAs is about 300 cm2/V·s. Accordinagly, the diffusion length of minority carrier lifetime is equal to 5 (± 7%), 5 (± 4,4%) and 1.42 µm (± 7,2 %) for the Cr, C and Si doped GaAs respectively. Surface recombination velocity varies randomly that can be found around of 7942 m/s, 100 m/s and 153 m/s GaAs doped Si, Cr, C, respectively.

Keywords: nonradiative lifetime, mobility of minority carrier, diffusion length, surface and interface recombination in GaAs

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13099 Two Layer Photo-Thermal Deflection Model to Investigate the Electronic Properties in BGaAs/GaAs Alloys

Authors: S. Ilahi, M. Baira, F. Saidi, N. Yacoubi, L. Auvray, H. Maaref

Abstract:

Photo-thermal deflection technique (PTD) is used to study the nonradiative recombination process in BGaAs/GaAs alloy with boron composition of 3% and 8% grown by metal organic chemical vapor deposition (MOCVD). A two layer theoretical model has been developed taking into account both thermal and electronic contribution in the photothermal signal allowing to extract the electronic parameters namely electronic diffusivity, surface and interface recombination. It is found that the increase of boron composition alters the BGaAs epilayers transport properties.

Keywords: photothermal defelction technique, two layer model, BGaAs/GaAs alloys, boron composition

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13098 Analysis of BSF Layer N-Gaas/P-Gaas/P+-Gaas Solar Cell

Authors: Abderrahmane Hemmani, Hamid Khachab, Dennai Benmoussa, Hassane Benslimane, Abderrachid Helmaoui

Abstract:

Back surface field GaAs with n -p-p+ structures are found to have better characteristics than the conventional solar cells. A theory, based on the transport of both minority carriers under the charge neutrality condition, has been developed in the present paper which explains behavior of the back surface field solar cells. That is reported with an efficiency of 25,05% (Jsc=33.5mA/cm2, Vco=0.87v and fill factor 86% under AM1.5 global conditions). We present the effect of technological parameters of the p+ layer on the conversion efficiency on the solar cell. Good agreement is achieved between our results and the simulation results given the variation of the equivalent recombination velocity to p+ layer as a function of BSF thickness and BSF doping.

Keywords: back surface field, GaAs, solar cell, technological parameters

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13097 Influence of Corrugation and Loosely Bonded Interface on the Propagation of Torsional Wave Propagation in a Viscoelastic Layer

Authors: Amrita Das, Abhishek Kumar Singh

Abstract:

The present paper calibrates the efficacy of corrugated and loosely bonded common interface of a viscoelastic layer and a dry sandy Gibson half-space on the propagation of torsional surface wave. Using suitable boundary conditions, the dispersion relation for the concerned problem is deduced in complex form. Numerical computation of the real part of the obtained dispersion relation gives the dispersion curve whereas the imaginary part bestows the damping curves. The use of Whittaker’s function and Bessel’s functions are among the major concerns of the paper. The investigation of the influence of the affecting parameters viz. heterogeneities, sandiness, Biot’s gravity parameter, initial stresses, loosely bonded interface, corrugation and internal friction on the phase velocity as well as damped velocity of torsional wave, through numerical discussion and graphical illustration, is among the major highlights of the current study.

Keywords: corrugation, dry sandy Gibson half-space, loosely bonded interface, torsional wave, viscoelastic layer

Procedia PDF Downloads 298
13096 The Superhydrophobic Surface Effect on Laminar Boundary Layer Flows

Authors: Chia-Yung Chou, Che-Chuan Cheng, Chin Chi Hsu, Chun-Hui Wu

Abstract:

This study investigates the fluid of boundary layer flow as it flows through the superhydrophobic surface. The superhydrophobic surface will be assembled into an observation channel for fluid experiments. The fluid in the channel will be doped with visual flow field particles, which will then be pumped by the syringe pump and introduced into the experimentally observed channel through the pipeline. Through the polarized light irradiation, the movement of the particles in the channel is captured by a high-speed camera, and the velocity of the particles is analyzed by MATLAB to find out the particle velocity field changes caused on the fluid boundary layer. This study found that the superhydrophobic surface can effectively increase the velocity near the wall surface, and the faster with the flow rate increases. The superhydrophobic surface also had longer the slip length compared with the plan surface. In the calculation of the drag coefficient, the superhydrophobic surface produces a lower drag coefficient, and there is a more significant difference when the Re reduced in the flow field.

Keywords: hydrophobic, boundary layer, slip length, friction

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13095 Theoretical Analysis of Graded Interface CdS/CIGS Solar Cell

Authors: Hassane Ben Slimane, Dennai Benmoussa, Abderrachid Helmaoui

Abstract:

We have theoretically calculated the photovoltaic conversion efficiency of a graded interface CdS/CIGS solar cell, which can be experimentally fabricated. Because the conduction band discontinuity or spike in an abrupt heterojunction CdS/CIGS solar cell can hinder the separation of hole-electron by electric field, a graded interface layer is uses to eliminate the spike and reduces recombination in space charge region. This paper describes the role of the graded band gap interface layer in decreasing the performance of the heterojunction cell. By optimizing the thickness of the graded region, an improvement of conversion efficiency has been observed in comparison to the conventional CIGS system.

Keywords: heterojunction, solar cell, graded interface, CIGS

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13094 Optimization of Cu (In, Ga)Se₂ Based Thin Film Solar Cells: Simulation

Authors: Razieh Teimouri

Abstract:

Electrical modelling of Cu (In,Ga)Se₂ thin film solar cells is carried out with compositionally graded absorber and CdS buffer layer. Simulation results are compared with experimental data. Surface defect layers (SDL) are located in CdS/CIGS interface for improving open circuit voltage simulated structure through the analysis of the interface is investigated with or without this layer. When SDL removed, by optimizing the conduction band offset (CBO) position of the buffer/absorber layers with its recombination mechanisms and also shallow donor density in the CdS, the open circuit voltage increased significantly. As a result of simulation, excellent performance can be obtained when the conduction band of window layer positions higher by 0.2 eV than that of CIGS and shallow donor density in the CdS was found about 1×10¹⁸ (cm⁻³).

Keywords: CIGS solar cells, thin film, SCAPS, buffer layer, conduction band offset

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13093 Surface Passivation of Multicrystalline Silicon Solar Cell via Combination of LiBr/Porous Silicon and Grain Boundaies Grooving

Authors: Dimassi Wissem

Abstract:

In this work, we investigate the effect of combination between the porous silicon (PS) layer passivized with Lithium Bromide (LiBr) and grooving of grain boundaries (GB) in multi crystalline silicon. The grain boundaries were grooved in order to reduce the area of these highly recombining regions. Using optimized conditions, grooved GB's enable deep phosphorus diffusion and deep metallic contacts. We have evaluated the effects of LiBr on the surface properties of porous silicon on the performance of silicon solar cells. The results show a significant improvement of the internal quantum efficiency, which is strongly related to the photo-generated current. We have also shown a reduction of the surface recombination velocity and an improvement of the diffusion length after the LiBr process. As a result, the I–V characteristics under the dark and AM1.5 illumination were improved. It was also observed a reduction of the GB recombination velocity, which was deduced from light-beam-induced-current (LBIC) measurements. Such grooving in multi crystalline silicon enables passivization of GB-related defects. These results are discussed and compared to solar cells based on untreated multi crystalline silicon wafers.

Keywords: Multicrystalline silicon, LiBr, porous silicon, passivation

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13092 High Efficiency Achievement by a New Heterojunction N-Zno:Al/P-Si Solar Cell

Authors: A. Bouloufa, F. Khaled, K. Djessas

Abstract:

This paper presents a new structure of solar cell based on p-type microcrystalline silicon as an absorber and n-type aluminum doped zinc oxide (ZnO:Al) transparent conductive oxide as an optical window. The ZnO:Al layer deposited by rf-magnetron sputtering at room temperature yields a low resistivity about 7,64.10-2Ω.cm and more than 85% mean optical transmittance in the VIS–NIR range, with an optical band gap of 3.3 eV. These excellent optical properties of this layer in combination with an optimal contact at the front surface result in a superior light trapping yielding to efficiencies about 20%. In order to improve efficiency, we have used a p+-µc-Si thin layer highly doped as a back surface field which minimizes significantly the impact of rear surface recombination velocity on voltage and current leading to a high efficiency of 24%. Optoelectronic parameters were determined using the current density-voltage (J-V) curve by means of a numerical simulation with Analysis of Microelectronic and Photonic Structures (AMPS-1D) device simulator.

Keywords: optical window, thin film, solar cell, efficiency

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13091 Effect of Adverse Pressure Gradient on a Fluctuating Velocity over the Co-Flow Jet Airfoil

Authors: Morteza Mirhosseini, Amir B. Khoshnevis

Abstract:

The boundary layer separation and new active flow control of a NACA 0025 airfoil were studied experimentally. This new flow control is sometimes known as a co-flow jet (cfj) airfoil. This paper presents the fluctuating velocity in a wall jet over the co-flow jet airfoil subjected to an adverse pressure gradient and a curved surface. In these results, the fluctuating velocity at the inner part increasing by increased the angle of attack up to 12o and this has due to the jet energized, while the angle of attack 20o has different. The airfoil cord based Reynolds number has 105.

Keywords: adverse pressure gradient, fluctuating velocity, wall jet, co-flow jet airfoil

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13090 Semiconductor Nanofilm Based Schottky-Barrier Solar Cells

Authors: Mariyappan Shanmugam, Bin Yu

Abstract:

Schottky-barrier solar cells are demonstrated employing 2D-layered MoS2 and WS2 semiconductor nanofilms as photo-active material candidates synthesized by chemical vapor deposition method. Large area MoS2 and WS2 nanofilms are stacked by layer transfer process to achieve thicker photo-active material studied by atomic force microscopy showing a thickness in the range of ~200 nm. Two major vibrational active modes associated with 2D-layered MoS2 and WS2 are studied by Raman spectroscopic technique to estimate the quality of the nanofilms. Schottky-barrier solar cells employed MoS2 and WS2 active materials exhibited photoconversion efficiency of 1.8 % and 1.7 % respectively. Fermi-level pinning at metal/semiconductor interface, electronic transport and possible recombination mechanisms are studied in the Schottky-barrier solar cells.

Keywords: two-dimensional nanosheet, graphene, hexagonal boron nitride, solar cell, Schottky barrier

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13089 Doping Density Effects on Minority Carrier Lifetime in Bulk GaAs by Means of Photothermal Deflection Technique

Authors: Soufiene Ilahi

Abstract:

Photothermal effect occurs when absorbed light energy that generate a thermal wave that propagate into the sample and surrounding media. Subsequently, the propagation of the vibration of phonons or electrons causes heat transfer. In fact, heat energy is provided by non-radiative recombination process that occurs in semiconductors sample. Three heats sources are identified: surface recombination, bulk recombination and carrier thermalisation. In the last few years, Photothermal Deflection Technique PTD is a nondestructive and accurate technique that prove t ability for electronics properties investigation. In this paper, we have studied the influence of doping on minority carrier lifetime, i.e, nonradiative lifetime, surface and diffusion coefficient. In fact, we have measured the photothermal signal of two sample of GaAs doped with C et Cr.In other hand , we have developed a theoretical model that takes into account of thermal and electronics diffusion equations .In order to extract electronics parameters of GaAs samples, we have fitted the theoretical signal of PTD to the experimental ones. As a results, we have found that nonradiative lifetime is around of 4,3 x 10-8 (±11,24%) and 5 x 10-8 (±14,32%) respectively for GaAs : Si doped and Cr doped. Accordingly, the diffusion coefficient is equal 4,6 *10-4 (± 3,2%) and 5* 10-4 (± 0,14%) foe the Cr, C and Si doped GaAs respectively.

Keywords: nonradiative lifetime, mobility of minority carrier, diffusion length, surface and interface recombination in GaAs

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13088 Active Control of Multiferroic Composite Shells Using 1-3 Piezoelectric Composites

Authors: S. C. Kattimani

Abstract:

This article deals with the analysis of active constrained layer damping (ACLD) of smart multiferroic or magneto-electro-elastic doubly curved shells. The kinematics of deformations of the multiferroic doubly curved shell is described by a layer-wise shear deformation theory. A three-dimensional finite element model of multiferroic shells has been developed taking into account the electro-elastic and magneto-elastic couplings. A simple velocity feedback control law is employed to incorporate the active damping. Influence of layer stacking sequence and boundary conditions on the response of the multiferroic doubly curved shell has been studied. In addition, for the different orientation of the fibers of the constraining layer, the performance of the ACLD treatment has been studied.

Keywords: active constrained layer damping (ACLD), doubly curved shells, magneto-electro-elastic, multiferroic composite, smart structures

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13087 Modulating Photoelectrochemical Water-Splitting Activity by Charge-Storage Capacity of Electrocatalysts

Authors: Yawen Dai, Ping Cheng, Jian Ru Gong

Abstract:

Photoelctrochemical (PEC) water splitting using semiconductors (SCs) provides a convenient way to convert sustainable but intermittent solar energy into clean hydrogen energy, and it has been regarded as one of most promising technology to solve the energy crisis and environmental pollution in modern society. However, the record energy conversion efficiency of a PEC cell (~3%) is still far lower than the commercialization requirement (~10%). The sluggish kinetics of oxygen evolution reaction (OER) half reaction on photoanodes is a significant limiting factor of the PEC device efficiency, and electrocatalysts (ECs) are always deposited on SCs to accelerate the hole injection for OER. However, an active EC cannot guarantee enhanced PEC performance, since the newly emerged SC-EC interface complicates the interfacial charge behavior. Herein, α-Fe2O3 photoanodes coated with Co3O4 and CoO ECs are taken as the model system to glean fundamental understanding on the EC-dependent interfacial charge behavior. Intensity modulated photocurrent spectroscopy and electrochemical impedance spectroscopy were used to investigate the competition between interfacial charge transfer and recombination, which was found to be dominated by the charge storage capacities of ECs. The combined results indicate that both ECs can store holes and increase the hole density on photoanode surface. It is like a double-edged sword that benefit the multi-hole participated OER, as well as aggravate the SC-EC interfacial charge recombination due to the Coulomb attraction, thus leading to a nonmonotonic PEC performance variation trend with the increasing surface hole density. Co3O4 has low hole storage capacity which brings limited interfacial charge recombination, and thus the increased surface holes can be efficiently utilized for OER to generate enhanced photocurrent. In contrast, CoO has overlarge hole storage capacity that causes severe interfacial charge recombination, which hinders hole transfer to electrolyte for OER. Therefore, the PEC performance of α-Fe2O3 is improved by Co3O4 but decreased by CoO despite the similar electrocatalytic activity of the two ECs. First-principle calculation was conducted to further reveal how the charge storage capacity depends on the EC’s intrinsic property, demonstrating that the larger hole storage capacity of CoO than that of Co3O4 is determined by their Co valence states and original Fermi levels. This study raises up a new strategy to manipulate interfacial charge behavior and the resultant PEC performance by the charge storage capacity of ECs, providing insightful guidance for the interface design in PEC devices.

Keywords: charge storage capacity, electrocatalyst, interfacial charge behavior, photoelectrochemistry, water-splitting

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13086 MHD Chemically Reacting Viscous Fluid Flow towards a Vertical Surface with Slip and Convective Boundary Conditions

Authors: Ibrahim Yakubu Seini, Oluwole Daniel Makinde

Abstract:

MHD chemically reacting viscous fluid flow towards a vertical surface with slip and convective boundary conditions has been conducted. The temperature and the chemical species concentration of the surface and the velocity of the external flow are assumed to vary linearly with the distance from the vertical surface. The governing differential equations are modeled and transformed into systems of ordinary differential equations, which are then solved numerically by a shooting method. The effects of various parameters on the heat and mass transfer characteristics are discussed. Graphical results are presented for the velocity, temperature, and concentration profiles whilst the skin-friction coefficient and the rate of heat and mass transfers near the surface are presented in tables and discussed. The results revealed that increasing the strength of the magnetic field increases the skin-friction coefficient and the rate of heat and mass transfers toward the surface. The velocity profiles are increased towards the surface due to the presence of the Lorenz force, which attracts the fluid particles near the surface. The rate of chemical reaction is seen to decrease the concentration boundary layer near the surface due to the destructive chemical reaction occurring near the surface.

Keywords: boundary layer, surface slip, MHD flow, chemical reaction, heat transfer, mass transfer

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13085 Investigation of Stoneley Waves in Multilayered Plates

Authors: Bing Li, Tong Lu, Lei Qiang

Abstract:

Stoneley waves are interface waves that propagate at the interface between two solid media. In this study, the dispersion characteristics and wave structures of Stoneley waves in elastic multilayered plates are displayed and investigated. With a perspective of bulk wave, a reasonable assumption of the potential function forms of the expansion wave and shear wave in nth layer medium is adopted, and the characteristic equation of Stoneley waves in a three-layered plate is given in a determinant form. The dispersion curves and wave structures are solved and presented in both numerical and simulation results. It is observed that two Stoneley wave modes exist in a three-layered plate, that conspicuous dispersion occurs on low frequency band, that the velocity of each Stoneley wave mode approaches the corresponding Stoneley wave velocity at interface between two half infinite spaces. The wave structures reveal that the in-plane displacement of Stoneley waves are relatively high at interfaces, which shows great potential for interface defects detection.

Keywords: characteristic equation, interface waves, potential function, Stoneley waves, wave structure

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13084 Formation of Chemical Compound Layer at the Interface of Initial Substances A and B with Dominance of Diffusion of the A Atoms

Authors: Pavlo Selyshchev, Samuel Akintunde

Abstract:

A theoretical approach to consider formation of chemical compound layer at the interface between initial substances A and B due to the interfacial interaction and diffusion is developed. It is considered situation when speed of interfacial interaction is large enough and diffusion of A-atoms through AB-layer is much more then diffusion of B-atoms. Atoms from A-layer diffuse toward B-atoms and form AB-atoms on the surface of B-layer. B-atoms are assumed to be immobile. The growth kinetics of the AB-layer is described by two differential equations with non-linear coupling, producing a good fit to the experimental data. It is shown that growth of the thickness of the AB-layer determines by dependence of chemical reaction rate on reactants concentration. In special case the thickness of the AB-layer can grow linearly or parabolically depending on that which of processes (interaction or the diffusion) controls the growth. The thickness of AB-layer as function of time is obtained. The moment of time (transition point) at which the linear growth are changed by parabolic is found.

Keywords: phase formation, binary systems, interfacial reaction, diffusion, compound layers, growth kinetics

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13083 Effect of Surface Treatments on the Cohesive Response of Nylon 6/silica Interfaces

Authors: S. Arabnejad, D. W. C. Cheong, H. Chaobin, V. P. W. Shim

Abstract:

Debonding is the one of the fundamental damage mechanisms in particle field composites. This phenomenon gains more importance in nano composites because of the extensive interfacial region present in these materials. Understanding the debonding mechanism accurately, can help in understanding and predicting the response of nano composites as the interface deteriorates. The small length scale of the phenomenon makes the experimental characterization complicated and the results of it, far from real physical behavior. In this study the damage process in nylon-6/silica interface is examined through Molecular Dynamics (MD) modeling and simulations. The silica has been modeled with three forms of surfaces – without any surface treatment, with the surface treatment of 3-aminopropyltriethoxysilane (APTES) and with Hexamethyldisilazane (HMDZ) surface treatment. The APTES surface modification used to create functional groups on the silica surface, reacts and form covalent bonds with nylon 6 chains while the HMDZ surface treatment only interacts with both particle and polymer by non-bond interaction. The MD model in this study uses a PCFF force field. The atomic model is generated in a periodic box with a layer of vacuum on top of the polymer layer. This layer of vacuum is large enough that assures us from not having any interaction between particle and substrate after debonding. Results show that each of these three models show a different traction separation behavior. However, all of them show an almost bilinear traction separation behavior. The study also reveals a strong correlation between the length of APTES surface treatment and the cohesive strength of the interface.

Keywords: debonding, surface treatment, cohesive response, separation behaviour

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13082 Mechanical Behaviours of Ti/GFRP/Ti Laminates with Different Surface Treatments of Titanium Sheets

Authors: Amit Kumar Haldar, Mark Simms, Ian McDevitt, Anthony Comer

Abstract:

Interface properties of fiber metal laminates (FML) affects the integrity and deformation failure modes. In this paper, the mechanical behaviours of Ti/GFRP/Ti laminates were experimentally investigated through low-velocity impact tests. Two different surface treatments of Titanium (Ti-6Al-4V) alloy sheets were prepared to obtain the composite interface properties based on annealing and sandblast surface treatment processes. The deformation failure modes, impact load sustaining ability and energy absorption capacity of FMLs were analysed. The impact load and modulus were shown to be dependent on the surface treatments of Titanium (Ti-6Al-4V) alloy sheets. It was demonstrated that the impact load performance was enhanced when titanium surfaces were annealed and sandblasted. It has also been shown that the values of the strength and energy absorption were slightly higher when the tests conducted at relatively higher loading rate, as a result of the rate-sensitive effects on the damage resistance of the FML.

Keywords: fiber metal laminates, metal composite interface, indentation, low velocity impact

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13081 Experimental Investigation of the Failure Behavior of a Retaining Wall Constructed with Soil Bags

Authors: Kewei Fan, Sihong Liu, Yi Pik Cheng

Abstract:

This paper aims to analyse the failure behaviour of the retaining wall constructed with soil bags that are formed by filling river sand into woven bags (geosynthetics). Model tests were conducted to obtain the failure mode of the wall, and shear tests on two-layers and five-layers of soil bags were designed to investigate the mechanical characteristics of the interface of soil bags. The test results show that the slip surface in the soil bags-constructed retaining wall is ladder-like due to the inter-layer insertion of soil bags, and the wall above the ladder-like surface undergoes a rigid body translation. The insertion strengthens the shear strength of two-layer staggered-stacked soil bags. Meanwhile, it affects the shape of the slip surface of the five-layer staggered-stacked soil bags. Finally, the interlayer resisting friction of soil bags is found to be related to the shape of the slip surface.

Keywords: geosynthetics, retaining wall, soil bag, failure mode, interface, shear strength

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13080 Application of the Shallow Seismic Refraction Technique to Characterize the Foundation Rocks at the Proposed Tushka New City Site, South Egypt

Authors: Abdelnasser Mohamed, R. Fat-Helbary, H. El Khashab, K. EL Faragawy

Abstract:

Tushka New City is one of the proposed new cities in South Egypt. It is located in the eastern part of the western Desert of Egypt between latitude 22.878º and 22.909º N and longitude 31.525º and 31.635º E, about 60 kilometers far from Abu Simble City. The main target of the present study is the investigation of the shallow subsurface structure conditions and the dynamic characteristics of subsurface rocks using the shallow seismic refraction technique. Forty seismic profiles were conducted to calculate the P- and S-waves velocity at the study area. P- and SH-waves velocities can be used to obtain the geotechnical parameters and also SH-wave can be used to study the vibration characteristics of the near surface layers, which are important for earthquakes resistant structure design. The output results of the current study indicated that the P-waves velocity ranged from 450 to 1800 m/sec and from 1550 to 3000 m/sec for the surface and bedrock layer respectively. The SH-waves velocity ranged from 300 to 1100 m/sec and from 1000 to 1800 m/sec for the surface and bedrock layer respectively. The thickness of the surface layer and the depth to the bedrock layer were determined along each profile. The bulk density ρ of soil layers that used in this study was calculated for all layers at each profile in the study area. In conclusion, the area is mainly composed of compacted sandstone with high wave velocities, which is considered as a good foundation rock. The south western part of the study area has minimum values of the computed P- and SH-waves velocities, minimum values of the bulk density and the maximum value of the mean thickness of the surface layer.

Keywords: seismic refraction, Tushak new city, P-waves, SH-waves

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13079 Numerical Simulation of Convective and Transport Processes in the Nocturnal Atmospheric Surface Layer

Authors: K. R. Sreenivas, Shaurya Kaushal

Abstract:

After sunset, under calm & clear-sky nocturnal conditions, the air layer near the surface containing aerosols cools through radiative processes to the upper atmosphere. Due to this cooling, surface air-layer temperature can fall 2-6 degrees C lower than the ground-surface temperature. This unstable convection layer, on the top, is capped by a stable inversion-boundary layer. Radiative divergence, along with the convection within the surface layer, governs the vertical transport of heat and moisture. Micro-physics in this layer have implications for the occurrence and growth of the fog layer. This particular configuration, featuring a convective mixed layer beneath a stably stratified inversion layer, exemplifies a classic case of penetrative convection. In this study, we conduct numerical simulations of the penetrative convection phenomenon within the nocturnal atmospheric surface layer and elucidate its relevance to the dynamics of fog layers. We employ field and laboratory measurements of aerosol number density to model the strength of the radiative cooling. Our analysis encompasses horizontally averaged, vertical profiles of temperature, density, and heat flux. The energetic incursion of the air from the mixed layer into the stable inversion layer across the interface results in entrainment and the growth of the mixed layer, modeling of which is the key focus of our investigation. In our research, we ascertain the appropriate length scale to employ in the Richardson number correlation, which allows us to estimate the entrainment rate and model the growth of the mixed layer. Our analysis of the mixed layer and the entrainment zone reveals a close alignment with previously reported laboratory experiments on penetrative convection. Additionally, we demonstrate how aerosol number density influences the growth or decay of the mixed layer. Furthermore, our study suggests that the presence of fog near the ground surface can induce extensive vertical mixing, a phenomenon observed in field experiments.

Keywords: inversion layer, penetrative convection, radiative cooling, fog occurrence

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13078 Examination of the Influence of the Near-Surface Geology on the Initial Infrastructural Development Using High-Resolution Seismic Method

Authors: Collins Chiemeke, Stephen Ibe, Godwin Onyedim

Abstract:

This research work on high-resolution seismic tomography method was carried out with the aim of investigating how near-surface geology influences the initial distribution of infrastructural development in an area like Otuoke and its environs. To achieve this objective, seismic tomography method was employed. The result revealed that the overburden (highly-weathered layer) thickness ranges from 27 m to 50 m within the survey area, with an average value of 37 m. The 3D surface analysis for the overburden thickness distribution within the survey area showed that the thickness of the overburden is more in regions with less infrastructural development, and least in built-up areas. The range of velocity distribution from the surface to within a depth of 5 m is about 660 m/s to 1160 m/s, with an average value of 946 m/s. The 3D surface analysis of the velocity distribution also revealed that the areas with large infrastructural development are characterized with large velocity values compared with the undeveloped regions that has average low-velocity values. Hence, one can conclusively say that the initial settlement of Otuoke and its environs and the subsequent infrastructural development was influenced by the underlying near surface geology (rigid earth), among other factors.

Keywords: geology, seismic, infrastructural, near-surface

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13077 Ruta graveolens Fingerprints Obtained with Reversed-Phase Gradient Thin-Layer Chromatography with Controlled Solvent Velocity

Authors: Adrian Szczyrba, Aneta Halka-Grysinska, Tomasz Baj, Tadeusz H. Dzido

Abstract:

Since prehistory, plants were constituted as an essential source of biologically active substances in folk medicine. One of the examples of medicinal plants is Ruta graveolens L. For a long time, Ruta g. herb has been famous for its spasmolytic, diuretic, or anti-inflammatory therapeutic effects. The wide spectrum of secondary metabolites produced by Ruta g. includes flavonoids (eg. rutin, quercetin), coumarins (eg. bergapten, umbelliferone) phenolic acids (eg. rosmarinic acid, chlorogenic acid), and limonoids. Unfortunately, the presence of produced substances is highly dependent on environmental factors like temperature, humidity, or soil acidity; therefore standardization is necessary. There were many attempts of characterization of various phytochemical groups (eg. coumarins) of Ruta graveolens using the normal – phase thin-layer chromatography (TLC). However, due to the so-called general elution problem, usually, some components remained unseparated near the start or finish line. Therefore Ruta graveolens is a very good model plant. Methanol and petroleum ether extract from its aerial parts were used to demonstrate the capabilities of the new device for gradient thin-layer chromatogram development. The development of gradient thin-layer chromatograms in the reversed-phase system in conventional horizontal chambers can be disrupted by problems associated with an excessive flux of the mobile phase to the surface of the adsorbent layer. This phenomenon is most likely caused by significant differences between the surface tension of the subsequent fractions of the mobile phase. An excessive flux of the mobile phase onto the surface of the adsorbent layer distorts the flow of the mobile phase. The described effect produces unreliable, and unrepeatable results, causing blurring and deformation of the substance zones. In the prototype device, the mobile phase solution is delivered onto the surface of the adsorbent layer with controlled velocity (by moving pipette driven by 3D machine). The delivery of the solvent to the adsorbent layer is equal to or lower than that of conventional development. Therefore chromatograms can be developed with optimal linear mobile phase velocity. Furthermore, under such conditions, there is no excess of eluent solution on the surface of the adsorbent layer so the higher performance of the chromatographic system can be obtained. Directly feeding the adsorbent layer with eluent also enables to perform convenient continuous gradient elution practically without the so-called gradient delay. In the study, unique fingerprints of methanol and petroleum ether extracts of Ruta graveolens aerial parts were obtained with stepwise gradient reversed-phase thin-layer chromatography. Obtained fingerprints under different chromatographic conditions will be compared. The advantages and disadvantages of the proposed approach to chromatogram development with controlled solvent velocity will be discussed.

Keywords: fingerprints, gradient thin-layer chromatography, reversed-phase TLC, Ruta graveolens

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13076 The “Buffer Layer” An Improved Electrode-Electrolyte Interface For Solid-State Batteries

Authors: Gregory Schmidt

Abstract:

Solid-state lithium batteries are broadly accepted as promising candidates for application in the next generation of EVs as they should offer safer and higher-energy-density batteries. Nonetheless, their development is impeded by many challenges, including the resistive electrode–electrolyte interface originating from the removal of the liquid electrolyte that normally permeates through the porous cathode and ensures efficient ionic conductivity through the cell. One way to tackle this challenge is by formulating composite cathodes containing solid ionic conductors in their structure, but this approach will require the conductors to exhibit chemical stability, electrochemical stability, flexibility, and adhesion and is, therefore, limited to some materials. Recently, Arkema developed a technology called buffering layer which allows the transformation of any conventional porous electrode into a catholyte. This organic layer has a very high ionic conductivity at room temperature, is compatible with all active materials, and can be processed with conventional Gigafactory equipment. Moreover, this layer helps protect the solid ionic conductor from the cathode and anode materials. During this presentation, the manufacture and the electrochemical performance of this layer for different systems of cathode and anode will be discussed.

Keywords: electrochemistry, all solid state battery, materials, interface

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13075 CuIn₃Se₅ Colloidal Nanocrystals and Its Ink-Coated Films for Photovoltaics

Authors: M. Ghali, M. Elnimr, G. F. Ali, A. M. Eissa, H. Talaat

Abstract:

CuIn₃Se₅ material is indexed as ordered vacancy compounds having excellent matching properties with CuInGaSe (CIGS) solar absorber layer. For example, the valence band offset of CuIn₃Se₅ with CIGS is nearly 0.3 eV, and the lattice mismatch is less than 1%, besides the absence of discontinuity in their conduction bands. Thus, CuIn₃Se₅ can work as a passivation layer for repelling holes from CIGS/CdS interface and hence to reduce the interface carriers recombination and consequently enhancing the efficiency of CIGS/CdS solar cells. Theoretically, it was reported earlier that an improvement in the efficiency of p-CIGS-based solar cell with a thin ~100 nm of n-CuIn₃Se₅ layer is expected. Recently, a reported experiment demonstrated significant improvement in the efficiency of Molecular Beam Epitaxy (MBE) grown CIGS solar cells from 13.4 to 14.5% via inserting a thin layer of MBE-grown Cu(In,Ga)₃Se₅ layer at the CdS/CIGS interface. It should be mentioned that CuIn₃Se₅ material in either bulk or thin film form, are usually fabricated by high vacuum physical vapor deposition techniques (e.g., three-source co-evaporation, RF sputtering, flash evaporation, and molecular beam epitaxy). In addition, achieving photosensitive films of n-CuIn₃Se₅ material is important for new hybrid organic/inorganic structures, where inorganic photo-absorber layer, with n-type conductivity, can form n–p junction with organic p-type material (e.g., conductive polymers). A detailed study of the physical properties of CuIn₃Se₅ is still necessary for better understanding of device operation and further improvement of solar cells performance. Here, we report on the low-cost synthesis of CuIn₃Se₅ material in nano-scale size, with an average diameter ~10nm, using simple solution-based colloidal chemistry. In contrast to traditionally grown bulk tetragonal CuIn₃Se₅ crystals using high Vacuum-based technology, our colloidal CuIn₃Se₅ nanocrystals show cubic crystal structure with a shape of nanoparticles and band gap ~1.33 eV. Ink-coated thin films prepared from these nanocrystals colloids; display n-type character, 1.26 eV band gap and strong photo-responsive behavior with incident white light. This suggests the potential use of colloidal CuIn₃Se₅ as an active layer in all-solution-processed thin film solar cells.

Keywords: nanocrystals, CuInSe, thin film, optical properties

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