Search results for: silicon shield
551 Effect of Variation of Temperature Distribution on Mechanical Properties of Shield Metal Arc Welded Duplex Stainless Steel
Authors: Arvind Mittal, Rajesh Gupta
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Influence of heat input on the micro structure and mechanical properties of shield metal arc welded of duplex stainless steel UNSNO.S-31803 has been investigated. Three heat input combinations designated as low heat (0.675 KJ/mm), medium heat (0.860 KJ/mm) and high heat (1.094 KJ/mm) and weld joints made using these combinations were subjected to micro structural evaluations and tensile and impact testing so as to analyze the effect of thermal arc energy on the micro structure and mechanical properties of these joints. The result of this investigation shows that the joints made using low heat input exhibited higher tensile strength than those welded with medium and high heat input. Heat affected zone of welded joint made with medium heat input has austenitic ferritic grain structure with some patchy austenite provide high toughness. Significant grain coarsening was observed in the heat affected zone (HAZ) of medium and high heat input welded joints, whereas low heat input welded joint shows the fine grain structure in the heat affected zone with small amount of dendritic formation and equiaxed grain structure where inner zone indicates slowly cooled grains in the direction of heat dissipation. This is the main reason for the observable changes of tensile properties of weld joints welded with different arc energy inputs.Keywords: microstructure, mechanical properties, shield metal arc welded, duplex stainless steel
Procedia PDF Downloads 283550 A Dissolution Mechanism of the Silicon Carbide in HF/K₂Cr₂O₇ Solutions
Authors: Karima Bourenane, Aissa Keffous
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In this paper, we present an experimental method on the etching reaction of p-type 6H-SiC, etching that was carried out in HF/K₂Cr₂O₇ solutions. The morphology of the etched surface was examined with varying K₂Cr₂O₇ concentrations, etching time and temperature solution. The surfaces of the etched samples were analyzed using Scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR) and Photoluminescence. The surface morphology of samples etched in HF/K₂Cr₂O₇ is shown to depend on the solution composition and bath temperature. The investigation of the HF/K₂Cr₂O₇ solutions on 6H-SiC surface shows that as K₂Cr₂O₇ concentration increases, the etch rate increases to reach a maximum value at about 0.75 M and then decreases. Similar behavior has been observed when the temperature of the solution is increased. The maximum etch rate is found for 80 °C. Taking into account the result, a polishing etching solution of 6H-SiC has been developed. In addition, the result is very interesting when, to date, no chemical polishing solution has been developed on silicon carbide (SiC). Finally, we have proposed a dissolution mechanism of the silicon carbide in HF/K₂Cr₂O₇ solutions.Keywords: silicon carbide, dissolution, Chemical etching, mechanism
Procedia PDF Downloads 55549 Effect of Silicon in Mitigating Cadmium Toxicity in Maize
Authors: Ghulam Hasan Abbasi, Moazzam Jamil, M. Anwar-Ul-Haq
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Heavy metals are significant pollutants in environment and their toxicity is a problem for survival of living things while Silicon (Si) is one of the most ubiquitous macroelements, performing an essential function in healing plants in response to environmental stresses. A hydroponic experiment was conducted to investigate the role of exogenous application of silicon under cadmium stress in six different maize hybrids with five treatments comprising of control, 7.5 µM Cd + 5 mM Si, 7.5 µM Cd + 10 mM Si, 15 µM Cd + 5 mM Si and 15 µM Cd + 10 mM Si. Results revealed that treatments of plants with 10mM Si application under both 7.5µM Cd and 15 µM Cd stress resulted in maximum improvement in plant morphological attributes (root and shoot length, root and shoot fresh and dry weight, leaf area and relative water contents) and antioxidant enzymes (POD and CAT) relative to 5 mM Si application in all maize hybrids. Results regarding Cd concentrations showed that Cd was more retained in roots followed by shoots and then leaves and maximum reduction in Cd uptake was observed at 10mM Si application. Maize hybrid 6525 showed maximum growth and least concentration of Cd whereas maize hybrid 1543 showed the minimum growth and maximum Cd concentration among all maize hybrids.Keywords: antioxidant, cadmium, maize, silicon
Procedia PDF Downloads 523548 To Study the Effect of Optic Fibre Laser Cladding of Cast Iron with Silicon Carbide on Wear Rate
Authors: Kshitij Sawke, Pradnyavant Kamble, Shrikant Patil
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The study investigates the effect on wear rate of laser clad of cast iron with silicon carbide. Metal components fail their desired use because they wear, which causes them to lose their functionality. The laser has been used as a heating source to create a melt pool over the surface of cast iron, and then a layer of hard silicon carbide is deposited. Various combinations of power and feed rate of laser have experimented. A suitable range of laser processing parameters was identified. Wear resistance and wear rate properties were evaluated and the result showed that the wear resistance of the laser treated samples was exceptional to that of the untreated samples.Keywords: laser clad, processing parameters, wear rate, wear resistance
Procedia PDF Downloads 261547 Lanthanum Fluoride with Embedded Silicon Nanocrystals: A Novel Material for Future Electronic Devices
Authors: Golam Saklayen, Sheikh Rashel al Ahmed, Ferdous Rahman, Ismail Abu Bakar
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Investigation on Lanthanum Fluoride LaF3 layer embedding Silicon Nanocrystals (Si-NCs) fabricated using a novel one-step chemical method has been reported in this presentation. Application of this material has been tested for low-voltage operating non-volatile memory and Schottkey-junction solar cell. Colloidal solution of Si-NCs in hydrofluoric acid (HF) was prepared from meso-porous silicon by ultrasonic vibration (sonication). This solution prevents the Si-NCs to be oxidized. On a silicon (Si) substrate, LaCl3 solution in HCl is allowed to react with the colloidal solution of prepared Si-NCs. Since this solution contains HF, LaCl3 reacts with HF and produces LaF3 crystals that deposits on the silicon substrate as a layer embedding Si-NCs. This a novel single step chemical way of depositing LaF3 insulating layer embedding Si-NCs. The X-Ray diffraction of the deposited layer shows a polycrystalline LaF3 deposition on silicon. A non-stoichiometric LaF3 layer embedding Si-NCs was found by EDX analysis. The presence of Si-NCs was confirmed by SEM. FTIR spectroscopy of the deposited LaF3 powder also confirmed the presence of Si-NCs. The size of Si-NCs was found to be inversely proportional to the ultrasonic power. After depositing proper contacts on the back of Si and LaF3, the devices have been tested as a non-volatile memory and solar cell. A memory window of 525 mV was obtained at a programming and erasing bias of 2V. The LaF3 films with Si NCs showed strong absorption and was also found to decrease optical transmittance than pure LaF3 film of same thickness. The I-V characteristics of the films showed a dependency on the incident light intensity where current changed under various light illumination. Experimental results show a lot of promise for Si-NCs-embedded LaF3 layer to be used as an insulating layer in MIS devices as well as an photoactive material in Schottkey junction solar cells.Keywords: silicon nanocrystals (Si NCs), LaF3, colloidal solution, Schottky junction solar cell
Procedia PDF Downloads 394546 Softener Washes Affecting the Shrinkage and Appearance of Knitted Garments
Authors: Ezza Nasir, Babar Ramzan
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Silicon washes on altered knitted fabrics will provide diverse shrinkage trends. The expectation on shrinkage for various apparel products are also changed. However, the effect of shrinkage in garment is still ambiguous. As a result, analysis of shrinkage after different concentrations of silicon washes can provide a more realistic study. The purpose of this study is to analyze the shrinkage with commercial sewing threads in knitted fabric. Study focuses on the effect of different washes on garment measurement and to study the effect of washes on fabric shrinkage. Four different types of knitted fabric were sewn with same length and width measurements. To study the effect of softener washes on shrinkage of garment through subjective ranking, there were critical dimensions for measurements done on body length and width garment appearance and shrinkage.Keywords: shrinkage, dimensions, knitted fabric, silicon
Procedia PDF Downloads 479545 Thermal Resistance Analysis of Flexible Composites Based on Al2O3 Aerogels
Authors: Jianzheng Wei, Duo Zhen, Zhihan Yang, Huifeng Tan
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The deployable descent technology is a lightweight entry method using an inflatable heat shield. The heatshield consists of a pressurized core which is covered by different layers of thermal insulation and flexible ablative materials in order to protect against the thermal loads. In this paper, both aluminum and silicon-aluminum aerogels were prepared by freeze-drying method. The latter material has bigger specific surface area and nano-scale pores. Mullite fibers are used as the reinforcing fibers to prepare the aerogel matrix to improve composite flexibility. The flexible composite materials were performed as an insulation layer to an underlying aramid fabric by a thermal shock test at a heat flux density of 120 kW/m2 and uniaxial tensile test. These results show that the aramid fabric with untreated mullite fibers as the thermal protective layer is completely carbonized at the heat of about 60 s. The aramid fabric as a thermal resistance layer of the composite material still has good mechanical properties at the same heat condition.Keywords: aerogel, aramid fabric, flexibility, thermal resistance
Procedia PDF Downloads 157544 Modeling and Characterization of the SiC Single Crystal Growth Process
Authors: T. Wejrzanowski, M. Grybczuk, E. Tymicki, K. J. Kurzydlowski
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In the present study numerical simulations silicon carbide single crystal growth process in Physical Vapor Transport reactor are addressed. Silicon Carbide is a perspective material for many applications in modern electronics. One of the main challenges for wider applications of SiC is high price of high quality mono crystals. Improvement of silicon carbide manufacturing process has a significant influence on the product price. Better understanding of crystal growth allows for optimization of the process, and it can be achieved by numerical simulations. In this work Virtual Reactor software was used to simulate the process. Predicted geometrical properties of the final product and information about phenomena occurring inside process reactor were obtained. The latter is especially valuable because reactor chamber is inaccessible during the process due to high temperature inside the reactor (over 2000˚C). Obtained data was used for improvement of the process and reactor geometry. Resultant crystal quality was also predicted basing on crystallization front shape evolution and threading dislocation paths. Obtained results were confronted with experimental data and the results are in good agreement.Keywords: Finite Volume Method, semiconductors, Physical Vapor Transport, silicon carbide
Procedia PDF Downloads 534543 Studying the Effect of Silicon Substrate Intrinsic Carrier Concentration on Performance of ZnO/Si Solar Cells
Authors: Syed Sadique Anwer Askari, Mukul Kumar Das
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Zinc Oxide (ZnO) solar cells have drawn great attention due to the enhanced efficiency and low-cost fabrication process. In this study, ZnO thin film is used as the active layer, hole blocking layer, antireflection coating (ARC) as well as transparent conductive oxide. To improve the conductivity of ZnO, top layer of ZnO is doped with aluminum, for top contact. Intrinsic carrier concentration of silicon substrate plays an important role in enhancing the power conversion efficiency (PCE) of ZnO/Si solar cell. With the increase of intrinsic carrier concentration PCE decreased due to increase in dark current in solar cell. At 80nm ZnO and 160µm Silicon substrate thickness, power conversion efficiency of 26.45% and 21.64% is achieved with intrinsic carrier concentration of 1x109/cm3, 1.4x1010/cm3 respectively.Keywords: hetero-junction solar cell, solar cell, substrate intrinsic carrier concentration, ZnO/Si
Procedia PDF Downloads 604542 Petrology and Finite Strain of the Al Amar Region, Northern Ar-Rayn Terrane, Eastern Arabian Shield, Saudi Arabia
Authors: Lami Mohammed, Hussain J. Al Faifi, Abdel Aziz Al Bassam, Osama M. K. Kassem
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The Neoproterozoic basement rocks of the Ar Rayn terrane have been identified as parts of the Eastern Arabian Shield. It focuses on the petrological and finite strain properties to display the tectonic setting of the Al Amar suture for high deformed volcanic and granitoids rocks. The volcanic rocks are classified into two major series: the eastern side cycle, which includes dacite, rhyodacite, rhyolite, and ignimbrites, and the western side cycle, which includes andesite and pyroclastics. Granitoids rocks also contain monzodiorite, tonalite, granodiorite, and alkali-feldspar granite. To evaluate the proportions of shear contributions in penetratively deformed rocks. Asymmetrical porphyroclast and sigmoidal structural markers along the suture's strike, namely the Al Amar, are expected to reveal strain factors. The Rf/phi and Fry techniques are used to characterize quartz and feldspar porphyroclast, biotite, and hornblende grains in Abt schist, high deformed volcanic rock, and granitoids. The findings exposed that these rocks had experienced shape flattening, finite strain accumulation, and overall volume loss. The magnitude of the strain appears to increase across the nappe contacts with neighboring lithologies. Subhorizontal foliation likely developed in tandem with thrusting and nappe stacking, almost parallel to tectonic contacts. The ductile strain accumulation that occurred during thrusting along the Al Amar suture mostly includes a considerable pure shear component. Progressive thrusting by overlaid transpression and oblique convergence is shown by stacked nappes and diagonal stretching lineations along the thrust axes. The subhorizontal lineation might be the result of the suture's most recent activity. The current study's findings contradict the widely accepted model that links orogen-scale structures in the Arabian Shield to oblique convergence with dominant simple shear deformation. A significant pure shear component/crustal thickening increment should have played a significant role in the evolution of the suture and thus in the Shield's overall deformation history. This foliation was primarily generated by thrusting nappes together, showing that nappe stacking was linked to substantial vertical shortening induced by the active Al Amar suture on a massive scale.Keywords: petrology, finite strain analysis, al amar region, ar-rayn terrane, Arabian shield
Procedia PDF Downloads 124541 Influence of Silicon Carbide Particle Size and Thermo-Mechanical Processing on Dimensional Stability of Al 2124SiC Nanocomposite
Authors: Mohamed M. Emara, Heba Ashraf
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This study is to investigation the effect of silicon carbide (SiC) particle size and thermo-mechanical processing on dimensional stability of aluminum alloy 2124. Three combinations of SiC weight fractions are investigated, 2.5, 5, and 10 wt. % with different SiC particle sizes (25 μm, 5 μm, and 100nm) were produced using mechanical ball mill. The standard testing samples were fabricated using powder metallurgy technique. Both samples, prior and after extrusion, were heated from room temperature up to 400ºC in a dilatometer at different heating rates, that is, 10, 20, and 40ºC/min. The analysis showed that for all materials, there was an increase in length change as temperature increased and the temperature sensitivity of aluminum alloy decreased in the presence of both micro and nano-sized silicon carbide. For all conditions, nanocomposites showed better dimensional stability compared to conventional Al 2124/SiC composites. The after extrusion samples showed better thermal stability and less temperature sensitivity for the aluminum alloy for both micro and nano-sized silicon carbide.Keywords: aluminum 2124 metal matrix composite, SiC nano-sized reinforcements, powder metallurgy, extrusion mechanical ball mill, dimensional stability
Procedia PDF Downloads 530540 A Machining Method of Cross-Shape Nano Channel and Experiments for Silicon Substrate
Authors: Zone-Ching Lin, Hao-Yuan Jheng, Zih-Wun Jhang
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The paper innovatively proposes using the concept of specific down force energy (SDFE) and AFM machine to establish a machining method of cross-shape nanochannel on single-crystal silicon substrate. As for machining a cross-shape nanochannel by AFM machine, the paper develop a method of machining cross-shape nanochannel groove at a fixed down force by using SDFE theory and combining the planned cutting path of cross-shape nanochannel up to 5th machining layer it finally achieves a cross-shape nanochannel at a cutting depth of around 20nm. Since there may be standing burr at the machined cross-shape nanochannel edge, the paper uses a smaller down force to cut the edge of the cross-shape nanochannel in order to lower the height of standing burr and converge the height of standing burr at the edge to below 0.54nm as set by the paper. Finally, the paper conducts experiments of machining cross-shape nanochannel groove on single-crystal silicon by AFM probe, and compares the simulation and experimental results. It is proved that this proposed machining method of cross-shape nanochannel is feasible.Keywords: atomic force microscopy (AFM), cross-shape nanochannel, silicon substrate, specific down force energy (SDFE)
Procedia PDF Downloads 377539 Delta-Doping in Silicon by Argon Ion Pre-implantation and Nanosecond Laser Annealing
Authors: Zhengfang Fan, Yaping Dan
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Delta-doping (δ-doping) has extensive applications in advanced metal oxide semiconductor field effect transistors, quantum devices and deep ultraviolet photodetectors. In this work, we demonstrate a novel method to form high-concentration phosphorus δ-doping in silicon with the assistance of argon pre-implantation and nanosecond laser annealing. It is encouraging that argon pre-implantation dramatically increases the incorporation of P dopants by 1-3 orders of magnitude, depending on the dosage of argon pre-implantation. The δ-doping layer in silicon has a peak phosphorus concentration of 1.44 × 1020 cm-3. Hall measurements reveal that the argon pre-implantation significantly increases the electron concentration, resulting in metallic-like conductivity in the δ-doping silicon layer. The magnetoresistances of the δ-doping samples decrease as the perpendicular magnetic field increases due to the weak localization of electrons, which implies the formation of a two-dimensional electron gas. As a demonstration, a highly sensitive deep ultraviolet photodetector is fabricated by forming an n-type δ-doping layer on a p-type Si substrate. A photocurrent of 0.33 μA is generated in the fabricated deep ultraviolet photodetector under the illumination of light at a wavelength of λ = 280 nm and the intensity of 266 μW/cm2, showing that the responsivity of the device is 0.124 A/W, two times of a commercial Si photodiode (LSSPD-U1.2, Beijing Lightsensing Technologies Ltd). This combination of argon pre-implantation and laser annealing offers a promising route for the realization of δ-doping layer in silicon, with potential applications in a variety of electronic and optoelectronic devices, including high-speed transistors, photodetectors, and quantum devices.Keywords: argon pre-implantation, delta doping, laser annealing, two-dimensional electron gas
Procedia PDF Downloads 12538 Exogenous Application of Silicon through the Rooting Medium Modulate Growth, Ion Uptake, and Antioxidant Activity of Barley (Hordeum vulgare L.) Under Salt Stress
Authors: Sibgha Noreen, Muhammad Salim Akhter, Seema Mahmood
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Salt stress is an abiotic stress that causes a heavy toll on growth and development and also reduces the productivity of arable and horticultural crops. Globally, a quarter of total arable land has fallen prey to this menace, and more is being encroached because of the usage of brackish water for irrigation purposes. Though barley is categorized as salt-tolerant crop, but cultivars show a wide genetic variability in response to it. In addressing salt stress, silicon nutrition would be a facile tool for enhancing salt tolerant to sustain crop production. A greenhouse study was conducted to evaluate the response of barley (Hordeum vulgare L.) cultivars to silicon nutrition under salt stress. The treatments included [(a) four barley cultivars (Jou-87, B-14002, B-14011, B-10008); (b) two salt levels (0, 200 mM, NaCl); and (c) two silicon levels (0, 200ppm, K2SiO3. nH2O), arranged in a factorial experiment in a completely randomized design with 16 treatments and repeated 4 times. Plants were harvested at 15 days after exposure to different experimental salinity and silicon foliar conditions. Results revealed that various physiological and biochemical attributes differed significantly (p<0.05) in response to different treatments and their interactive effects. Cultivar “B-10008” excelled in biological yield, chlorophyll constituents, antioxidant enzymes, and grain yield compared to other cultivars. The biological yield of shoot and root organs was reduced by 27.3 and 26.5 percent under salt stress, while it was increased by 14.5 and 18.5 percent by exogenous application of silicon over untreated check, respectively. The imposition of salt stress at 200 mM caused a reduction in total chlorophyll content, chl ‘a’ , ‘b’ and ratio a/b by 10.6,16.8,17.1 and 7.1, while spray of 200 ppm silicon improved the quantum of the constituents by 10.4,12.1,10.2,10.3 over untreated check, respectively. The quantum of free amino acids and protein content was enhanced in response to salt stress and the spray of silicon nutrients. The amounts of superoxide dismutase, catalases, peroxidases, hydrogen peroxide, and malondialdehyde contents rose to 18.1, 25.7, 28.1, 29.5, and 17.6 percent over non-saline conditions under salt stress. However, the values of these antioxidants were reduced in proportion to salt stress by 200 ppm silicon applied as rooting medium on barley crops. The salt stress caused a reduction in the number of tillers, number of grains per spike, and 100-grain weight to the amount of 29.4, 8.6, and 15.8 percent; however, these parameters were improved by 7.1, 10.3, and 9.6 percent by foliar spray of silicon over untreated crop, respectively. It is concluded that the barley cultivar “B-10008” showed greater tolerance and adaptability to saline conditions. The yield of barley crops could be potentiated by a foliar spray of 200 ppm silicon at the vegetative growth stage under salt stress.Keywords: salt stress, silicon nutrition, chlorophyll constituents, antioxidant enzymes, barley crop
Procedia PDF Downloads 46537 Deformation and Strength of Heat-Shielding Materials in a Long-Term Storage of Aircraft
Authors: Lyudmila L. Gracheva
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Thermal shield is a multi-layer structure that consists of layers made of different materials. The use of composite materials (CM) reinforced with carbon fibers in rocket technologies (shells, bearings, wings, fairings, inter-step compartments, etc.) is due to a possibility of reducing the weight while increasing a structural strength. Structures made of a unidirectional carbon fiber reinforced plastic based on an epoxy resin are used as load-bearing skins for aircraft fairings. The results of an experimental study of the physical and mechanical properties of epoxy carbon fiber reinforced plastics depending on temperature for different storage times of products are presented. With an increasing temperature, the physical and mechanical properties of CM are determined by the thermal and deformation properties of the components and the geometry of their distribution. Samples for the study were cut from natural skins of the head fairings.Keywords: composite material, thermal deformation, carbon fiber, heat shield, epoxy resin, thermal expansion
Procedia PDF Downloads 60536 Controlling Shape and Position of Silicon Micro-nanorolls Fabricated using Fine Bubbles during Anodization
Authors: Yodai Ashikubo, Toshiaki Suzuki, Satoshi Kouya, Mitsuya Motohashi
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Functional microstructures such as wires, fins, needles, and rolls are currently being applied to variety of high-performance devices. Under these conditions, a roll structure (silicon micro-nanoroll) was formed on the surface of the silicon substrate via fine bubbles during anodization using an extremely diluted hydrofluoric acid (HF + H₂O). The as-formed roll had a microscale length and width of approximately 1 µm. The number of rolls was 3-10 times and the thickness of the film forming the rolls was about 10 nm. Thus, it is promising for applications as a distinct device material. These rolls functioned as capsules and/or pipelines. To date, number of rolls and roll length have been controlled by anodization conditions. In general, controlling the position and roll winding state is required for device applications. However, it has not been discussed. Grooves formed on silicon surface before anodization might be useful control the bubbles. In this study, we investigated the effect of the grooves on the position and shape of the roll. The surfaces of the silicon wafers were anodized. The starting material was p-type (100) single-crystalline silicon wafers. The resistivity of the wafer is 5-20 ∙ cm. Grooves were formed on the surface of the substrate before anodization using sandpaper and diamond pen. The average width and depth of the grooves were approximately 1 µm and 0.1 µm, respectively. The HF concentration {HF/ (HF + C₂H5OH + H₂O)} was 0.001 % by volume. The C2H5OH concentration {C₂H5OH/ (HF + C₂H5OH + H₂O)} was 70 %. A vertical single-tank cell and Pt cathode were used for anodization. The silicon roll was observed by field-emission scanning electron microscopy (FE-SEM; JSM-7100, JEOL). The atomic bonding state of the rolls was evaluated using X-ray photoelectron spectroscopy (XPS; ESCA-3400, Shimadzu). For straight groove, the rolls were formed along the groove. This indicates that the orientation of the rolls can be controlled by the grooves. For lattice-like groove, the rolls formed inside the lattice and along the long sides. In other words, the aspect ratio of the lattice is very important for the roll formation. In addition, many rolls were formed and winding states were not uniform when the lattice size is too large. On the other hand, no rolls were formed for small lattice. These results indicate that there is the optimal size of lattice for roll formation. In the future, we are planning on formation of rolls using groove formed by lithography technique instead of sandpaper and the pen. Furthermore, the rolls included nanoparticles will be formed for nanodevices.Keywords: silicon roll, anodization, fine bubble, microstructure
Procedia PDF Downloads 36535 Atomic Layer Deposition of Metal Oxides on Si/C Materials for the Improved Cycling Stability of High-Capacity Lithium-Ion Batteries
Authors: Philipp Stehle, Dragoljub Vrankovic, Montaha Anjass
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Due to its high availability and extremely high specific capacity, silicon (Si) is the most promising anode material for next generation lithium-ion batteries (LIBs). However, Si anodes are suffering from high volume changes during cycling causing unstable solid-electrolyte interface (SEI). One approach for mitigation of these effects is to embed Si particles into a carbon matrix to create silicon/carbon composites (Si/C). These typically show more stable electrochemical performance than bare silicon materials. Nevertheless, the same failure mechanisms mentioned earlier appear in a less pronounced form. In this work, we further improved the cycling performance of two commercially available Si/C materials by coating thin metal oxide films of different thicknesses on the powders via Atomic Layer Deposition (ALD). The coated powders were analyzed via ICP-OES and AFM measurements. Si/C-graphite anodes with automotive-relevant loadings (~3.5 mAh/cm2) were processed out of the materials and tested in half coin cells (HCCs) and full pouch cells (FPCs). During long-term cycling in FPCs, a significant improvement was observed for some of the ALD-coated materials. After 500 cycles, the capacity retention was already up to 10% higher compared to the pristine materials. Cycling of the FPCs continued until they reached a state of health (SOH) of 80%. By this point, up to the triple number of cycles were achieved by ALD-coated compared to pristine anodes. Post-mortem analysis via various methods was carried out to evaluate the differences in SEI formation and thicknesses.Keywords: silicon anodes, li-ion batteries, atomic layer deposition, silicon-carbon composites, surface coatings
Procedia PDF Downloads 127534 The Effect of Surface Modifiers on the Mechanical and Morphological Properties of Waste Silicon Carbide Filled High-Density Polyethylene
Authors: R. Dangtungee, A. Rattanapan, S. Siengchin
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Waste silicon carbide (waste SiC) filled high-density polyethylene (HDPE) with and without surface modifiers were studied. Two types of surface modifiers namely; high-density polyethylene-grafted-maleic anhydride (HDPE-g-MA) and 3-aminopropyltriethoxysilane have been used in this study. The composites were produced using a two roll mill, extruder and shaped in a hydraulic compression molding machine. The mechanical properties of polymer composites such as flexural strength and modulus, impact strength, tensile strength, stiffness and hardness were investigated over a range of compositions. It was found that, flexural strength and modulus, tensile modulus and hardness increased, whereas impact strength and tensile strength decreased with the increasing in filler contents, compared to the neat HDPE. At similar filler content, the effect of both surface modifiers increased flexural modulus, impact strength, tensile strength and stiffness but reduced the flexural strength. Morphological investigation using SEM revealed that the improvement in mechanical properties was due to enhancement of the interfacial adhesion between waste SiC and HDPE.Keywords: high-density polyethylene, HDPE-g-MA, mechanical properties, morphological properties, silicon carbide, waste silicon carbide
Procedia PDF Downloads 368533 IoT Based Monitoring Temperature and Humidity
Authors: Jay P. Sipani, Riki H. Patel, Trushit Upadhyaya
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Today there is a demand to monitor environmental factors almost in all research institutes and industries and even for domestic uses. The analog data measurement requires manual effort to note readings, and there may be a possibility of human error. Such type of systems fails to provide and store precise values of parameters with high accuracy. Analog systems are having drawback of storage/memory. Therefore, there is a requirement of a smart system which is fully automated, accurate and capable enough to monitor all the environmental parameters with utmost possible accuracy. Besides, it should be cost-effective as well as portable too. This paper represents the Wireless Sensor (WS) data communication using DHT11, Arduino, SIM900A GSM module, a mobile device and Liquid Crystal Display (LCD). Experimental setup includes the heating arrangement of DHT11 and transmission of its data using Arduino and SIM900A GSM shield. The mobile device receives the data using Arduino, GSM shield and displays it on LCD too. Heating arrangement is used to heat and cool the temperature sensor to study its characteristics.Keywords: wireless communication, Arduino, DHT11, LCD, SIM900A GSM module, mobile phone SMS
Procedia PDF Downloads 285532 Preparation of Silicon-Based Oxide Hollow Nanofibers Using Single-Nozzle Electrospinning
Authors: Juiwen Liang, Choliang Chung
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In this study, the silicon-base oxide nanofibers with hollow structure were prepared using single-nozzle electrospinning and heat treatment. Firstly, precursor solution was prepared: the Polyvinylpyrrolidone (PVP) and Tetraethyl orthosilicate (TEOS) dissolved in ethanol and to make sure the concentration of solution in appropriate using single-nozzle electrospinning to produce the nanofibers. Secondly, control morphology of the electrostatic spinning nanofibers was conducted, and design the temperature profile to created hollow nanofibers, exploring the morphology and properties of nanofibers. The characterized of nanofibers, following instruments were used: Atomic force microscopy (AFM), Field Emission Scanning Electron Microscope (FE-SEM), Transmission electron microscopy (TEM), Photoluminescence (PL), X-ray Diffraction (XRD). The AFM was used to scan the nanofibers, and 3D Graphics were applied to explore the surface morphology of fibers. FE-SEM and TEM were used to explore the morphology and diameter of nanofibers and hollow nanofiber. The excitation and emission spectra explored by PL. Finally, XRD was used for identified crystallization of ceramic nanofibers. Using electrospinning technique followed by subsequent heat treatment, we have successfully prepared silicon-base oxide nanofibers with hollow structure. Thus, the microstructure and morphology of electrostatic spinning silicon-base oxide hollow nanofibers were explored. Major characteristics of the nanofiber in terms of crystalline, optical properties and crystal structure were identified.Keywords: electrospinning, single-nozzle, hollow, nanofibers
Procedia PDF Downloads 353531 A Study on the Iterative Scheme for Stratified Shields Gamma Ray Buildup Factors Using Layer-Splitting Technique in Double-Layer Shields
Authors: Sari F. Alkhatib, Chang Je Park, Gyuhong Roh
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The iterative scheme which is used to treat buildup factors for stratified shields is being investigated here using the layer-splitting technique. A simple suggested formalism for the scheme based on the Kalos’ formula is introduced, based on which the implementation of the testing technique is carried out. The second layer in a double-layer shield was split into two equivalent layers and the scheme (with the suggested formalism) was implemented on the new “three-layer” shield configuration. The results of such manipulation on water-lead and water-iron shields combinations are presented here for 1 MeV photons. It was found that splitting the second layer introduces some deviation on the overall buildup factor value. This expected deviation appeared to be higher in the case of low Z layer followed by high Z. However, the overall performance of the iterative scheme showed a great consistency and strong coherence even with the introduced changes. The introduced layer-splitting testing technique shows the capability to be implemented in test the iterative scheme with a wide range of formalisms.Keywords: buildup factor, iterative scheme, stratified shields, layer-splitting tecnique
Procedia PDF Downloads 418530 Effect of Elevation and Wind Direction on Silicon Solar Panel Efficiency
Authors: Abdulrahman M. Homadi
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As a great source of renewable energy, solar energy is considered to be one of the most important in the world, since it will be one of solutions cover the energy shortage in the future. Photovoltaic (PV) is the most popular and widely used among solar energy technologies. However, PV efficiency is fairly low and remains somewhat expensive. High temperature has a negative effect on PV efficiency and cooling system for these panels is vital, especially in warm weather conditions. This paper presents the results of a simulation study carried out on silicon solar cells to assess the effects of elevation on enhancing the efficiency of solar panels. The study included four different terrains. The study also took into account the direction of the wind hitting the solar panels. To ensure the simulation mimics reality, six silicon solar panels are designed in two columns and three rows, facing to the south at an angle of 30 o. The elevations are assumed to change from 10 meters to 200 meters. The results show that maximum increase in efficiency occurs when the wind comes from the north, hitting the back of the panels.Keywords: solar panels, elevation, wind direction, efficiency
Procedia PDF Downloads 301529 Numerical Design and Characterization of SiC Single Crystals Obtained with PVT Method
Authors: T. Wejrzanowski, M. Grybczuk, E. Tymicki, K. J. Kurzydlowski
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In the present study, numerical simulations of heat and mass transfer in Physical Vapor Transport reactor during silicon carbide single crystal growth are addressed. Silicon carbide is a wide bandgap material with unique properties making it highly applicable for high power electronics applications. Because of high manufacturing costs improvements of SiC production process are required. In this study, numerical simulations were used as a tool of process optimization. Computer modeling allows for cost and time effective analysis of processes occurring during SiC single crystal growth and provides essential information needed for improvement of the process. Quantitative relationship between process conditions, such as temperature or pressure, and crystal growth rate and shape of crystallization front have been studied and verified using experimental data. Basing on modeling results, several process improvements were proposed and implemented.Keywords: Finite Volume Method, semiconductors, Physica Vapor Transport, silicon carbide
Procedia PDF Downloads 501528 Enhancing the Luminescence of Alkyl-Capped Silicon Quantum Dots by Using Metal Nanoparticles
Authors: Khamael M. Abualnaja, Lidija Šiller, Ben R. Horrocks
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Metal enhanced luminescence of alkyl-capped silicon quantum dots (C11-SiQDs) was obtained by mixing C11-SiQDs with silver nanoparticles (AgNPs). C11-SiQDs have been synthesized by galvanostatic method of p-Si (100) wafers followed by a thermal hydrosilation reaction of 1-undecene in refluxing toluene in order to extract alkyl-capped silicon quantum dots from porous Si. The chemical characterization of C11-SiQDs was carried out using X-ray photoemission spectroscopy (XPS). C11-SiQDs have a crystalline structure with a diameter of 5 nm. Silver nanoparticles (AgNPs) of two different sizes were synthesized also using photochemical reduction of silver nitrate with sodium dodecyl sulphate. The synthesized Ag nanoparticles have a polycrystalline structure with an average particle diameter of 100 nm and 30 nm, respectively. A significant enhancement up to 10 and 4 times in the luminescence intensities was observed for AgNPs100/C11-SiQDs and AgNPs30/C11-SiQDs mixtures, respectively using 488 nm as an excitation source. The enhancement in luminescence intensities occurs as a result of the coupling between the excitation laser light and the plasmon bands of Ag nanoparticles; thus this intense field at Ag nanoparticles surface couples strongly to C11-SiQDs. The results suggest that the larger Ag nanoparticles i.e.100 nm caused an optimum enhancement in the luminescence intensity of C11-SiQDs which reflect the strong interaction between the localized surface plasmon resonance of AgNPs and the electric field forming a strong polarization near C11-SiQDs.Keywords: silicon quantum dots, silver nanoparticles (AgNPs), luminescence, plasmon
Procedia PDF Downloads 383527 Silver Nanoparticles-Enhanced Luminescence Spectra of Silicon Nanocrystals
Authors: Khamael M. Abualnaja, Lidija Šiller, Benjamin R. Horrocks
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Metal-enhanced luminescence of silicon nano crystals (SiNCs) was determined using two different particle sizes of silver nano particles (AgNPs). SiNCs have been characterized by scanning electron microscopy (SEM), high resolution transmission electron microscopy (HRTEM), Fourier transform infrared spectroscopy (FTIR) and X-ray photo electron spectroscopy (XPS). It is found that the SiNCs are crystalline with an average diameter of 65 nm and FCC lattice. AgNPs were synthesized using photochemical reduction of AgNO3 with sodium dodecyl sulphate (SDS). The enhanced luminescence of SiNCs by AgNPs was evaluated by confocal Raman microspectroscopy. Enhancement up to ×9 and ×3 times were observed for SiNCs that mixed with AgNPs which have an average particle size of 100 nm and 30 nm, respectively. Silver NPs-enhanced luminescence of SiNCs occurs as a result of the coupling between the excitation laser light and the plasmon bands of AgNPs; thus this intense field at AgNPs surface couples strongly to SiNCs.Keywords: silver nanoparticles, surface enhanced raman spectroscopy (SERS), silicon nanocrystals, luminescence
Procedia PDF Downloads 429526 A Review on Silicon Based Induced Resistance in Plants against Insect Pests
Authors: Asim Abbasi, Muhammad Sufyan, Muhammad Kamran, Iqra
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Development of resistance in insect pests against various groups of insecticides has prompted the use of alternative integrated pest management approaches. Among these induced host plant resistance represents an important strategy as it offers a practical, cheap and long lasting solution to keep pests populations below economic threshold level (ETL). Silicon (Si) has a major role in regulating plant eco-relationship by providing strength to the plant in the form of anti-stress mechanism which was utilized in coping with the environmental extremes to get a better yield and quality end produce. Among biotic stresses, insect herbivore signifies one class against which Si provide defense. Silicon in its neutral form (H₄SiO₄) is absorbed by the plants via roots through an active process accompanied by the help of different transporters which were located in the plasma membrane of root cells or by a passive process mostly regulated by transpiration stream, which occurs via the xylem cells along with the water. Plants tissues mainly the epidermal cell walls are the sinks of absorbed silicon where it polymerizes in the form of amorphous silica or monosilicic acid. The noteworthy function of this absorbed silicon is to provide structural rigidity to the tissues and strength to the cell walls. Silicon has both direct and indirect effects on insect herbivores. Increased abrasiveness and hardness of epidermal plant tissues and reduced digestibility as a result of deposition of Si primarily as phytoliths within cuticle layer is now the most authenticated mechanisms of Si in enhancing plant resistance to insect herbivores. Moreover, increased Si content in the diet also impedes the efficiency by which insects transformed consumed food into the body mass. The palatability of food material has also been changed by Si application, and it also deters herbivore feeding for food. The production of defensive compounds of plants like silica and phenols have also been amplified by the exogenous application of silicon sources which results in reduction of the probing time of certain insects. Some studies also highlighted the role of silicon at the third trophic level as it also attracts natural enemies of insects attacking the crop. Hence, the inclusion of Si in pest management approaches can be a healthy and eco-friendly tool in future.Keywords: defensive, phytoliths, resistance, stresses
Procedia PDF Downloads 193525 Designing, Processing and Isothermal Transformation of Al-Si High Carbon Ultrafine High Strength Bainitic Steel
Authors: Mohamed K. El-Fawkhry, Ahmed Shash, Ahmed Ismail Zaki Farahat, Sherif Ali Abd El Rahman, Taha Mattar
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High-carbon, silicon-rich steels are commonly suggested to obtain very fine bainitic microstructure at low temperature ranged from 200 to 300°C. Thereby, the resulted microstructure consists of slender of bainitic-ferritic plates interwoven with retained austenite. The advanced strength and ductility package of this steel is much dependent on the fineness of bainitic ferrite, as well as the retained austenite phase. In this article, Aluminum to Silicon ratio, and the isothermal transformation temperature have been adopted to obtain ultra high strength high carbon steel. Optical and SEM investigation of the produced steels have been performed. XRD has been used to track the retained austenite development as a result of the change in the chemical composition of developed steels and heat treatment process. Mechanical properties in terms of hardness and microhardness of obtained phases and structure were investigated. It was observed that the increment of aluminum to silicon ratio has a great effect in promoting the bainitic transformation, in tandem with improving the stability and the fineness of retained austenite. Such advanced structure leads to enhancement in the whole mechanical properties of the high carbon steel.Keywords: high-carbon steel, silicon-rich steels, fine bainitic microstructure, retained austenite, isothermal transformation
Procedia PDF Downloads 353524 Analysis of Sulphur-Oxidizing Bacteria Attack on Concrete Based on Waste Materials
Authors: A. Eštoková, M. Kovalčíková, A. Luptáková, A. Sičáková, M. Ondová
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Concrete durability as an important engineering property of concrete, determining the service life of concrete structures very significantly, can be threatened and even lost due to the interactions of concrete with external environment. Bio-corrosion process caused by presence and activities of microorganisms producing sulphuric acid is a special type of sulphate deterioration of concrete materials. The effects of sulphur-oxidizing bacteria Acidithiobacillus thiooxidans on various concrete samples, based on silica fume and zeolite, were investigated in laboratory during 180 days. A laboratory study was conducted to compare the performance of concrete samples in terms of the concrete deterioration influenced by the leaching of calcium and silicon compounds from the cement matrix. The changes in the elemental concentrations of calcium and silicon in both solid samples and liquid leachates were measured by using X – ray fluorescence method. Experimental studies confirmed the silica fume based concrete samples were found out to have the best performance in terms of both silicon and calcium ions leaching.Keywords: biocorrosion, concrete, leaching, bacteria
Procedia PDF Downloads 455523 The Experience with SiC MOSFET and Buck Converter Snubber Design
Authors: Petr Vaculik
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The newest semiconductor devices on the market are MOSFET transistors based on the silicon carbide – SiC. This material has exclusive features thanks to which it becomes a better switch than Si – silicon semiconductor switch. There are some special features that need to be understood to enable the device’s use to its full potential. The advantages and differences of SiC MOSFETs in comparison with Si IGBT transistors have been described in first part of this article. Second part describes driver for SiC MOSFET transistor and last part of article represents SiC MOSFET in the application of buck converter (step-down) and design of simple RC snubber.Keywords: SiC, Si, MOSFET, IGBT, SBD, RC snubber
Procedia PDF Downloads 488522 Yield Enhancement and Reduced Nutrient Removal by Weeds in Winter Irrigated Cotton Using Potassium Salt Based Glyphosate
Authors: N. Viji, K. Siddeswaran
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Field experiment was conducted at Eastern Block farm, Department of Farm Management, Tamil Nadu Agricultural University, Coimbatore during winter season of 2011-2012 to evaluate potassium salt based glyphosate (Roundup Crop Shield 460 SL) with and without intercultural operations on seed cotton yield and weed nutrient removal in irrigated cotton. The experiment was laid out in Randomized Block Design with treatments replicated thrice. The treatments consisted of POE glyphosate (Roundup Crop Shield 460 SL) at 1350 (T1), 1800 (T2), 2250 (T3) g a.e. ha-1, 1800 g a.e. ha-1 + IC (T4), PE pendimethalin at 750 g a.i. ha-1 + IC (T5), HW at 35 and 70 DAS + IC (T6), HWW at 35 and 70 DAS + IC (T7), PWW at 35 and 70 DAS + IC (T8), HW at 25 and 45 DAS (T9) and Unweeded control (T10). Among the weed management methods, decreased nutrient removal by weeds were observed with POE glyphosate at 1800 g a.e. ha-1 + IC which was comparable with PE pendimethalin at 750 g a.i. ha-1 + IC. Higher seed cotton yield was obtained with POE glyphosate at 1800 g a.e. ha-1 at 35 and 70 DAS with + IC at 45 and 55 DAS which was comparable with PE pendimethalin at 750 g a.i. ha-1 + IC at 45 and 55 DAS. Comparing treatments without intercultural operation, intercultural operation carried out treatments performed better and recorded more seed cotton yield.Keywords: cotton, weed, glyphosate, nutrient
Procedia PDF Downloads 642