Search results for: lead-free perovskite solar cell

Authors: Ahmad Taghinia, Negar Gholamishaker

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GaAs (gallium arsenide) solar cells have gained significant attention for their use in space applications. These solar cells have the potential for efficient energy conversion and are being explored as potential power sources for electronic devices, satellites, and telecommunication equipment. In this study, the aim is to investigate the effect of adding a window layer and a back surface field (BSF) layer made of InₓGa₍₁₋ₓ₎P material to a GaAs single junction solar cell. In this paper, we first obtain the important electrical parameters of a single-junction GaAs solar cell by utilizing a two-dimensional simulator software for virtual investigation of the solar cell; then, we analyze the impact of adding a window layer and a back surface field layer made of InₓGa₍₁₋ₓ₎P on the solar cell. The results show that the incorporation of these layers led to enhancements in Jsc, Voc, FF, and the overall efficiency of the solar cell.

Keywords: back surface field layer, solar cell, GaAs, InₓGa₍₁₋ₓ₎P, window layer

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Authors: Hassane Ben Slimane, Benmoussa Dennai, Abderrahman Hemmani, Abderrachid Helmaoui

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During the past few years a great variety of multi-junction solar cells has been developed with the aim of a further increase in efficiency beyond the limits of single junction devices. This paper analyzes the GaAs/CIGS based tandem solar cell performance by AMPS-1D numerical modeling. Various factors which affect the solar cell’s performance are investigated, carefully referring to practical cells, to obtain the optimum parameters for the GaAs and CIGS top and bottom solar cells. Among the factors studied are thickness and band gap energy of dual junction cells.

Keywords: multijunction solar cell, GaAs, CIGS, AMPS-1D

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Authors: H. Mazouz, A. Belghachi, F. Hadjaj

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Solar cells used in orbit are exposed to radiation environment mainly protons and high energy electrons. These particles degrade the output parameters of the solar cell. The aim of this work is to characterize the effects of electron irradiation fluence on the J (V) characteristic and output parameters of gaAs solar cell by numerical simulation. The results obtained demonstrate that the electron irradiation-induced degradation of performances of the cells concerns mainly the short circuit current.

Keywords: gaAs solar cell, MeV electron irradiation, irradiation fluence, short circuit

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Authors: Sh. Sousani, Z. Shadrokh, M. Hofbauerová, J. Kollár, M. Jergel, P. Nádaždy, M. Omastová, E. Majková

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Perovskite quantum dots (PQDs) have the potential to increase the performance of the perovskite solar cells (PSCs). The integration of PQDs into PSCs can extend the absorption range and enhance photon harvesting and device efficiency. In addition, PQDs can stabilize the device structure by passivating surface defects and traps in the perovskite layer and enhance its stability. The integration of PQDs into PSCs is strongly affected by the type of ligands on the surface of PQDs. The ligands affect the charge transport properties of PQDs, as well as the formation of well-defined interfaces and stability of PSCs. In this work, the CsPbBr₃ QDs were synthesized by the conventional hot-injection method using cesium oleate, PbBr₂, and two different ligands, namely oleic acid (OA)@oleylamine (OAm) and didodecyldimethylammonium bromide (DDAB). The STEM confirmed regular shape and relatively monodisperse cubic structure with an average size of about 10-14 nm of the prepared CsPbBr₃ QDs. Further, the photoluminescent (PL) properties of the PQDs/perovskite bilayer with the ligand OA@OAm and DDAB were studied. For this purpose, ITO/PQDs, as well as ITO/PQDs/MAPI perovskite structures, were prepared by spin coating, and the effect of the ligand and oxygen plasma treatment was analysed. The plasma treatment of the PQDs layer could be beneficial for the deposition of the MAPI perovskite layer and the formation of a well-defined PQDs/MAPI interface. The absorption edge in UV-Vis absorption spectra for OA@OAm CsPbBr₃ QDs is placed around 513 nm (the band gap 2.38 eV); for DDAB CsPbBr₃ QDs, it is located at 490 nm (the band gap 2.33 eV). The photoluminescence (PL) spectra of CsPbBr₃ QDs show two peaks located around 514 nm (503 nm) and 718 nm (708 nm) for OA@OAm (DDAB). The peak around 500 nm corresponds to the PL of PQDs, and the peak close to 710 nm belongs to the surface states of PQDs for both types of ligands. These surface states are strongly affected by the O₃ plasma treatment. For PQDs with DDAB ligand, the O₃ exposure (5, 10, 15 s) results in the blue shift of the PQDs peak and a non-monotonous change of the amplitude of the surface states' peak. For OA@OAm ligand, the O₃ exposition did not cause any shift of the PQDs peak, and the intensity of the PL peak related to the surface states is lower by one order of magnitude in comparison with DDAB, being affected by O₃ plasma treatment. The PL results indicate the possibility of tuning the position of the PL maximum by the ligand of the PQDs. Similar behaviour of the PQDs layer was observed for the ITO/QDs/MAPI samples, where an additional strong PL peak at 770 nm coming from the perovskite layer was observed; for the sample with PQDs with DDAB ligands, a small blue shift of the perovskite PL maximum was observed independently of the plasma treatment. These results suggest the possibility of affecting the PL maximum position and the surface states of the PQDs by the combination of a suitable ligand and the O₃ plasma treatment.

Keywords: perovskite quantum dots, photoluminescence, O₃ plasma., perovskite solar cells

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Authors: Ching-Hua Li, Sheng-Hui Chen

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Sputtering is a popular technique with many advantages for thin film deposition. To fabricate a hydrogenated silicon thin film using sputtering process for solar cell applications, the ion bombardment during sputtering will generate microstructures (voids and columnar structures) to form silicon dihydride bodings as defects. The properties of heterojunction silicon solar cells were studied by using boron grains and silicon-boron targets. Finally, an 11.7% efficiency of solar cell was achieved by using all sputtering process.

Keywords: solar cell, sputtering process, pvd, alloy target

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Authors: Souhila Boukli Hacene, Djamila Kherbouche, Abdelhak Chikhaoui

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In this work, we elucidate theoretically the effect of defects and temperature on the performance of the organic bulk heterojunction solar cell (BHJ) P3HT: PCBM. We have studied the influence of their parameters on cell characteristics. For this purpose, we used the effective medium model and the solar cell simulator (SCAPS) to model the characteristics of the solar cell. We also explore the transport of charge carriers in the device. It was assumed that the mixture is lightly p-type doped and that the band gap contains acceptor defects near the HOMO level with a Gaussian distribution of energy states at 100 and 50 meV. We varied defects density between 1012-1017 cm-3, from 1016 cm-3, a total decrease of the photovoltaic characteristics due to the increase of the non-radiative recombination can be noticed. Then we studied the effect of variation of the electron and the hole capture cross-section on the cell’s performance, we noticed that the cell obtains a better efficiency of about 3.6% for an electron capture cross section ≤ 10-15 cm2 and a hole capture cross section ≤ 10-19 cm2. On the other hand, we also varied the temperature between 120K and 400K. We observed that the temperature of the solar cell induces a noticeable effect on its voltage. While the effect of temperature on the solar cell current is negligible.

Keywords: organic solar cell, P3HT:PCBM, defects, temperature, SCAPS

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Authors: Mazouz Halima, Belghachi Abdrahmane

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Effects of electron irradiation-induced deep level defects have been studied on both n/p and p/n indium phosphide solar cells with very thin emitters. The simulation results show that n/p structure offers a somewhat better short circuit current but the p/n structure offers improved circuit voltage, not only before electron irradiation, but also after 1MeV electron irradiation with 5.1015 fluence. The simulation also shows that n/p solar cell structure is more resistant than that of p/n structure.

Keywords: InP solar cell, p/n and n/p structure, electron irradiation, output parameters

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Authors: F. Stephen Joe, V. Sathya Narayanan, V. R. Sanal Kumar

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A comprehensive review of the literature on photovoltaic cells has been carried out for exploring the better options for cost efficient technologies for future solar cell applications. Literature review reveals that the Bulk Heterojunction (BHJ) Polymer Solar cells offer special opportunities as renewable energy resources. It is evident from the previous studies that the device fabricated with TiOx layer shows better power conversion efficiency than that of the device without TiOx layer. In this paper, authors designed a controlled BHJ solar cell using a modified organic vapor spray deposition technique facilitated with a vertical-moving gun named as 'Stephen Joe Technique' for getting a desirable surface pattern over the substrate to improving its efficiency over the years for industrial applications. We comprehended that the efficient processing and the interface engineering of these solar cells could increase the efficiency up to 5-10 %.

Keywords: BHJ polymer solar cell, photovoltaic cell, solar cell, Stephen Joe technique

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Authors: M. Chavez, H. Juarez, M. Pacio, O. Portillo

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PbS chemical bath heterojunction sollar cells have shown significant improvements in performance. Here we demonstrate a solar cell based on the heterojunction formed between PbS layer and PbS:Bi3+ thin films that are deposited via solution process at 40°C. The device achieve an current density of 4 mA/cm2. The simple and low-cost deposition method of PbS:Bi3+ films is promising for the fabrication.

Keywords: PbS doped, Bismuth, solar cell, thin films

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Authors: Hassane Ben Slimane, Dennai Benmoussa, Abderrachid Helmaoui

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We have theoretically calculated the photovoltaic conversion efficiency of a graded interface CdS/CIGS solar cell, which can be experimentally fabricated. Because the conduction band discontinuity or spike in an abrupt heterojunction CdS/CIGS solar cell can hinder the separation of hole-electron by electric field, a graded interface layer is uses to eliminate the spike and reduces recombination in space charge region. This paper describes the role of the graded band gap interface layer in decreasing the performance of the heterojunction cell. By optimizing the thickness of the graded region, an improvement of conversion efficiency has been observed in comparison to the conventional CIGS system.

Keywords: heterojunction, solar cell, graded interface, CIGS

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Authors: Aleksandra Boldyreva, Alexander Golubnichiy, Artem Abakumov

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Various perovskite materials have surprisingly high resistance towards high-energy electrons, protons, and hard ionization, such as X-rays and gamma-rays. Superior radiation hardness makes a family of perovskite semiconductors an attractive candidate for single- and multijunction solar cells for the space environment and as X-ray and gamma-ray detectors. One of the methods to study the radiation hardness of different materials is by exposing them to gamma photons with high energies (above 500 keV) Herein, we have explored the recombination dynamics and defect concentration of a mixed cation mixed halide perovskite Cs0.17FA0.83PbI1.8Br1.2 with 1.74 eV bandgap after exposure to a gamma-ray source (2.5 Gy/min). We performed an advanced STEM EDX analysis to reveal different types of defects formed during gamma exposure. It was found that 10 kGy dose results in significant improvement of perovskite crystallinity and homogeneous distribution of I ions. While the absorber layer withstood gamma exposure, the hole transport layer (PTAA) as well as indium tin oxide (ITO) were significantly damaged, which increased the interface recombination rate and reduction of fill factor in solar cells. Thus, STEM analysis is a powerful technique that can reveal defects formed by gamma exposure in perovskite solar cells. Methods: Data will be collected from perovskite solar cells (PSCs) and thin films exposed to gamma ionisator. For thin films 50 μL of the Cs0.17FA0.83PbI1.8Br1.2 solution in DMF was deposited (dynamically) at 3000 rpm followed by quenching with 100 μL of ethyl acetate (dropped 10 sec after perovskite precursor) applied at the same spin-coating frequency. The deposited Cs0.17FA0.83PbI1.8Br1.2 films were annealed for 10 min at 100 °C, which led to the development of a dark brown color. For the solar cells, 10% suspension of SnO2 nanoparticles (Alfa Aesar) was deposited at 4000 rpm, followed by annealing on air at 170 ˚C for 20 min. Next, samples were introduced into a nitrogen glovebox for the deposition of all remaining layers. Perovskite film was applied in the same way as in thin films described earlier. Solution of poly-triaryl amine PTAA (Sigma Aldrich) (4 mg in chlorobenzene) was applied at 1000 rpm atop of perovskite layer. Next, 30 nm of VOx was deposited atop the PTAA layer on the whole sample surface using the physical vapor deposition (PVD) technique. Silver electrodes (100 nm) were evaporated in a high vacuum (10-6 mbar) through a shadow mask, defining the active area of each device as ~0.16 cm2. The prepared samples (thin films and solar cells) were packed in Al lamination foil inside the argon glove box. The set of samples consisted of 6 thin films and 6 solar cells, which were exposed to 6, 10, and 21 kGy (2 samples per dose) with 137Cs gamma-ray source (E = 662 keV) with a dose rate of 2.5 Gy/min. The exposed samples will be studied on a focused ion beam (FIB) on a dual-beam scanning electron microscope from ThermoFisher, the Helios G4 Plasma FIB Uxe, operating with a xenon plasma.

Keywords: perovskite solar cells, transmission electron microscopy, radiation hardness, gamma irradiation

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Authors: László Forró

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The organolead halide perovskite CH3NH3PbI3 and its derivatives are known to be very efficient light harvesters revolutionizing the field of solid-state solar cells. The major research area in this field is photovoltaic device engineering although other applications are being explored, as well. Recently, we have shown that nanowires of this photovoltaic perovskite can be synthesized which in association with carbon nanostructures (carbon nanotubes and graphene) make outstanding composites with rapid and strong photo-response. They can serve as conducting electrodes, or as central components of detectors. The performance of several miniature devices based on these composite structures will be demonstrated. Our latest findings on the guided growth of perovskite nanowires by solvatomorph graphoepitaxy will be presented. This method turned out to be a fairly simple approach to overcome the spatially random surface nucleation. The process allows the synthesis of extremely long (centimeters) and thin (a few nanometers) nanowires with a morphology defined by the shape of nanostructured open fluidic channels. This low-temperature solution-growth method could open up an entirely new spectrum of architectural designs of organometallic-halide-perovskite-based heterojunctions and tandem solar cells, LEDs and other optoelectronic devices. Acknowledgment: This work is done in collaboration with Endre Horvath, Massimo Spina, Alla Arakcheeva, Balint Nafradi, Eric Bonvin1, Andrzej Sienkievicz, Zsolt Szekrenyes, Hajnalka Tohati, Katalin Kamaras, Eduard Tutis, Laszlo Mihaly and Karoly Holczer The research is supported by the ERC Advanced Grant (PICOPROP670918).

Keywords: photovoltaics, perovskite, nanowire, photodetector

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Authors: R. Nasrin, M. Ferdows

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Among the renewable energy sources, photovoltaic (PV) is a high potential, effective, and sustainable system. Irradiation intensity from 200 W/m2 to 1000 W/m2 has been considered to observe the performance of PV module. Generally, this module converts only about 15% - 20% of incident irradiation into electrical energy and the rest part is converted into heat energy. Finite element method has been used to solve the problem numerically. Simulation has been performed by considering the ambient temperature 30°C. Higher irradiation increase solar cell temperature and electrical power. The electrical efficiency of PV module decreases with the variation of solar radiation. The efficiency of PV module can be increased if cell temperature is reduced. Thus the effect of irradiation is significant to enhance the efficiency of PV module if the solar cell temperature is kept at a certain level.

Keywords: PV module, solar radiation, efficiency, cell temperature

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Authors: A. O. Boyo, A. T. Akinwunmi

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The effect of extracting solvent and adjustment of pHs on the stability of Terminalia catappa L. dye-sensitized solar cell was investigated. We introduced ZnO as an alternative to TiO2 in the dye sensitized solar cells (DSSCs) due to its band gap similar to TiO2, higher electron mobility, and flexible procedures of preparations. Dye-sensitized solar cells (DSSCs) based on Terminalia catappa L. was extracted in water (A), ethanol (B) and the mixture of ethanol and water in the ratio 1:1by volume (C). The best performance Solar cells sensitized was from extracts A and achieved up to Jsc 1.51 mAcm−2, Voc 0.75V, FF 0.88 and η 0.63%. We notice that as pHs decreases there is the increase in DSSC efficiency. There is Long period stability in efficiency of the cells prepared using A than in C and a fair stability in efficiency of B cell. The results obtained with extracts B and C confirmed that Ethanol with water could not be considered as a suitable solvent for the extraction of natural dye.

Keywords: zinc oxide, dye-sensitized solar cell, terminalia catappa L., TiO2

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Authors: Fethi Benyettou, Abdelkader Aissat, M. A. Benammar

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In this work, we use Silvaco TCAD software for modeling and simulations of standard GaAs solar cell, InAs/GaAs and GaSb/GaAs p-i-n quantum dot solar cell. When comparing 20-layer InAs/GaAs, GaSb/GaAs quantum dots solar cells with standard GaAs solar cell, the conversion efficiency in simulation results increased from 16.48 % to 22.6% and 16.48% to 22.42% respectively. Also, the absorption range edge of photons with low energies extended from 900 nm to 1200 nm.

Keywords: SILVACO TCAD, the quantum dot, simulation, materials engineering

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Authors: Mekhannene Amine

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In this paper, we began in the first step by two-dimensional simulation of a CIGS solar cell, in order to increase the current record efficiency of 20.48% for a single CIGS cell. Was created by utilizing a set of physical and technological parameters a solar cell of reference (such as layer thicknesses, gallium ratio, doping levels and materials properties) documented in bibliography and very known in the experimental field. This was accomplished through modeling and simulation using Atlas SILVACO-TCAD, an tool two and three dimensions very powerful and very adapted. This study has led us to determine the influence of different environmental parameters such as illumination (G) and temperature (T). In the second step, we continued our study by determining the influence of physical parameters (the acceptor of concentration NA) and geometric (thickness t) of the CIGS absorber layer, were varied to produce an optimum efficiency of 24.36%. This approach is promising to produce a CIGS classic solar cell to conduct a maximum performance.

Keywords: solar cell, cigs, photovoltaic generator, illumination, temperature, Atlas SILVACO-TCAD

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Authors: Syed Sadique Anwer Askari, Mukul Kumar Das

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Zinc Oxide (ZnO) solar cells have drawn great attention due to the enhanced efficiency and low-cost fabrication process. In this study, ZnO thin film is used as the active layer, hole blocking layer, antireflection coating (ARC) as well as transparent conductive oxide. To improve the conductivity of ZnO, top layer of ZnO is doped with aluminum, for top contact. Intrinsic carrier concentration of silicon substrate plays an important role in enhancing the power conversion efficiency (PCE) of ZnO/Si solar cell. With the increase of intrinsic carrier concentration PCE decreased due to increase in dark current in solar cell. At 80nm ZnO and 160µm Silicon substrate thickness, power conversion efficiency of 26.45% and 21.64% is achieved with intrinsic carrier concentration of 1x109/cm3, 1.4x1010/cm3 respectively.

Keywords: hetero-junction solar cell, solar cell, substrate intrinsic carrier concentration, ZnO/Si

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Authors: Mouad Ouafi, Lahoucine Atourki, Larbi Laanab, Erika Vega, Miguel Mollar, Bernabe Marib, Boujemaa Jaber

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Despite the astonishing emergence of the methylammonium lead triiodide perovskite as a promising light harvester for solar cells, their physical properties in solution-processed MAPbI₃ are still crucial and need to be improved. The objective of this work is to investigate the hot airflow effect during the growth of MAPbI₃ films using the spin-coating process on their structural, optical and morphological proprieties. The experimental results show that many physical proprieties of the perovskite strongly depend on the air flow temperature and the optimization which has a beneficial effect on the perovskite quality. In fact, a clear improvement of the crystallinity and the crystallite size of MAPbI₃ perovskite is demonstrated by the XRD analyses, when the airflow temperature is increased up to 100°C. Alternatively, as far as the surface morphology is concerned, SEM micrographs show that significant homogenous nucleation, uniform surface distribution and pin holes free with highest surface coverture of 98% are achieved when the airflow temperature reaches 100°C. At this temperature, the improvement is also observed when considering the optical properties of the films. By contrast, a remarkable degradation of the MAPbI₃ perovskites associated to the PbI₂ phase formation is noticed, when the hot airflow temperature is higher than 100°C, especially 300°C.

Keywords: hot air flow, crystallinity, surface coverage, perovskite morphology

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Authors: Leila Ayat, Afak Meftah

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Amorphous-silicon alloys have great promise as low cost solar cell materials. They have excellent photo-conductivity and high optical absorption to sunlight. Now PIN a-Si:H based solar cells are widely used in power generation modules. However, to improve the performance of these cells further, a better fundamental under-standing of the factors limiting cell performance in the homo junction PIN structure is necessary. In this paper we discuss the sensitivity of light J-V characteristics to various device and material parameters in PIN homo junction solar cells. This work is a numerical simulation of the output parameters of a PIN a-Si:H solar cell under AM1.5 spectrum. These parameters are the short circuit current (Jsc), the open circuit voltage (Voc), the fill factor (FF), the conversion efficiency. The simulation was performed with SCAPS-1D software version 3.3 developed at ELIS in Belgium by Marc Burgelman et al. The obtained results are in agreement with experiment. In addition, the effect of the thickness, doping density, capture cross sections of the gap states and the band microscopic mobilities on the output parameters of the cell are also presented.

Keywords: amorphous silicon p-i-n junctions, thin film, solar cells, sensitivity

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Authors: Abderrahmane Hemmani, Hamid Khachab, Dennai Benmoussa, Hassane Benslimane, Abderrachid Helmaoui

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Back surface field GaAs with n -p-p+ structures are found to have better characteristics than the conventional solar cells. A theory, based on the transport of both minority carriers under the charge neutrality condition, has been developed in the present paper which explains behavior of the back surface field solar cells. That is reported with an efficiency of 25,05% (Jsc=33.5mA/cm2, Vco=0.87v and fill factor 86% under AM1.5 global conditions). We present the effect of technological parameters of the p+ layer on the conversion efficiency on the solar cell. Good agreement is achieved between our results and the simulation results given the variation of the equivalent recombination velocity to p+ layer as a function of BSF thickness and BSF doping.

Keywords: back surface field, GaAs, solar cell, technological parameters

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Authors: Dounya Barrit, Ming-Chun Tang, Hoang Dang, Kai Wang, Detlef-M. Smilgies, Aram Amassian

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Several deposition methods have been developed for perovskite film preparation. The one-step spin-coating process has emerged as a more popular option thanks to its ability to produce films of different compositions, including mixed cation and mixed halide perovskites, which can stabilize the perovskite phase and produce phases with desired band gap. The two-step method, however, is not understood in great detail. There is a significant need and opportunity to adopt the two-step process toward mixed cation and mixed halide perovskites, but this requires deeper understanding of the two-step conversion process, for instance when using different cations and mixtures thereof, to produce high-quality perovskite films with uniform composition. In this work, we demonstrate using in situ investigations that the conversion of PbI₂ to perovskite is largely dictated by the state of the PbI₂ precursor film in terms of its solvated state. Using time-resolved grazing incidence wide-angle X-Ray scattering (GIWAXS) measurements during spin coating of PbI₂ from a DMF (Dimethylformamide) solution we show the film formation to be a sol-gel process involving three PbI₂-DMF solvate complexes: disordered precursor (P₀), ordered precursor (P₁, P₂) prior to PbI₂ formation at room temperature after 5 minutes. The ordered solvates are highly metastable and eventually disappear, but we show that performing conversion from P₀, P₁, P₂ or PbI₂ can lead to very different conversion behaviors and outcomes. We compare conversion behaviors by using MAI (Methylammonium iodide), FAI (Formamidinium Iodide) and mixtures of these cations, and show that conversion can occur spontaneously and quite rapidly at room temperature without requiring further thermal annealing. We confirm this by demonstrating improvements in the morphology and microstructure of the resulting perovskite films, using techniques such as in situ quartz crystal microbalance with dissipation monitoring, SEM and XRD.

Keywords: in situ GIWAXS, lead iodide, mixed cation, perovskite solar cell, sol-gel process, solvate phase

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Authors: Kusum Kumari, Ramesh Banoth, V. S. Reddy Channu

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Organic-inorganic perovskite solar cells (PrSCs) have emerged as a promising solar photovoltaic technology in terms of realizing high power conversion efficiency (PCE). However, their limited lifetime and poor device stability limits their commercialization in future. In this regard, interface engineering of the electron transport layer (ETL) using 2D materials have been currently used owing to their high carrier mobility, high thermal stability and tunable work function, which in turn enormously impact the charge carrier dynamics. In this work, we report an easy and effective way of simultaneously enhancing the efficiency of PrSCs along with the long-term stability through interface engineering via the incorporation of 2D-Molybdenum disulfide (2D-MoS₂, few layered nanoflakes) in mesoporous-Titanium dioxide (mp-TiO₂)scaffold electron transport buffer layer, and using poly 3-hexytheophene (P3HT) as hole transport layers. The PSCs were fabricated in ambient air conditions in device configuration, FTO/c-TiO₂/mp-TiO₂:2D-MoS₂/CH3NH3PbI3/P3HT/Au, with an active area of 0.16 cm². The best device using c-TiO₂/mp-TiO₂:2D-MoS₂ (0.5wt.%) ETL exhibited a substantial increase in PCE ~13.04% as compared to PCE ~8.75% realized in reference device fabricated without incorporating MoS₂ in mp-TiO₂ buffer layer. The incorporation of MoS₂ nanoflakes in mp-TiO₂ ETL not only enhances the PCE to ~49% but also leads to better device stability in ambient air conditions without encapsulation (retaining PCE ~86% of its initial value up to 500 hrs), as compared to ETLs without MoS₂.

Keywords: perovskite solar cells, MoS₂, nanoflakes, electron transport layer

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Authors: Benmoussa Dennai, H. Benslimane, A. Helmaoui

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Photo voltaic conversion is the direct conversion of electromagnetic energy into electrical energy continuously. This electromagnetic energy is the most solar radiation. In this work we performed a computer modelling using AMPS 1D optimization of hetero-junction solar cells GaInP/GaAs configuration for p/ n. We studied the influence of the thickness the base layer in the cell offers on the open circuit voltage, the short circuit current and efficiency.

Keywords: optimization, photovoltaic cell, GaInP / GaAs AMPS-1D, hetetro-junction

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Authors: K. Touafek, A. Khelifa, E. H. Khettaf, A. Embarek

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Hybrid photovoltaic thermal (PV/T) solar system comprises a solar collector which is disposed on photovoltaic solar cells. The disadvantage of a conventional photovoltaic cell is that its performance decreases as the temperature increases. Indeed, part of the solar radiation is converted into electricity and is dissipated as heat, increasing the temperature of the photovoltaic cell with respect to the ambient temperature. The objective of this work is to study experimentally and implement a hybrid prototype to evaluate electrical and thermal performance. In this paper, an experimental study of two new configurations of hybrid collectors is exposed. The results are given and interpreted. The two configurations of absorber studied are a new combination with tubes and galvanized tank, the other is a tubes and sheet.

Keywords: experimental, photovoltaic, solar, temperature

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Authors: Adenike Boyo Olasunkanmi Kesinro, Henry Boyo, Surukite Oluwole

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Utilizing solar energy in producing electricity can minimize environmental pollution generated by fossil fuel in producing electricity. Our research was base on the extraction of dye from Roystonea regia fruit by using methanol as solvent. The dye extracts were used as sensitizers in Dye-sensitized solar cell (DSSCs). Study was done on the electrical properties from the extracts of Roystonea regia fruit as Dye-sensitized solar cell (DSSCs). The absorptions of the extracts and extracts with dye were determined at different wavelengths (350-1000nm). Absorption peak was observed at 1.339 at wavelength 400nm. The obtained values for methanol extract Roystonea regia extract are, Imp = 0.015mA, Vmp = 12.0mV, fill factor = 0.763, Isc= 0.018 mA and Voc = 13.1 mV and efficiency of 0.32%. .The phytochemical screening was taken and it was observed that Roystonea regia extract contained less of anthocyanin compared to flavonoids. The nanostructured dye sensitized solar cell (DSSC) will provide economically credible alternative to present day silicon p–n junction photovoltaic.

Keywords: methanol, ethanol, titanium dioxide, roystonea regia fruit, dye-sensitized solar cell

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Authors: Benmoussa Dennai, H. Benslimane, A. Helmaoui

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Photovoltaic conversion is the direct conversion of electromagnetic energy into electrical energy continuously. This electromagnetic energy is the most solar radiation. In this work we performed a computer modelling using AMPS 1D optimization of hetero-junction solar cells GaInP / GaAs configuration for p / n. We studied the influence of the thickness the base layer in the cell offers on the open circuit voltage, the short circuit current and efficiency.

Keywords: optimization, photovoltaic cell, GaInP / GaAs AMPS-1D, hetetro-junction

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Authors: Wen-Hsi Lee, C.G. Kao

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In this study, Cu paste was prepared and printed with narrow line screen printing process on polycrystalline Si solar cell which has already finished the back Al printing and deposition of double anti-reflection coatings (DARCs). Then, two-step firing process was applied to sinter the front electrode and obtain the ohmic contact between front electrode and solar cell. The first step was in air atmosphere. In this process, PbO-based glass frit etched the DARCs and Ag recrystallized at the surface of Si, constructing the preliminary contact. The second step was in reducing atmosphere. In this process, CuO reduced to Cu and sintered. Besides, Ag nanoparticles recrystallized in the glass layer at interface due to the interactions between H2, Ag and PbO-based glass frit and the volatility of Pb, constructing the ohmic contact between electrode and solar cell. By experiment and analysis, reaction mechanism in each stage was surmised, and it was also proven that ohmic contact and good sheet resistance for front electrode could both be obtained by applying newly-invented paste and process.

Keywords: front electrode, solar cell, ohmic contact, screen printing, paste

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Authors: Zeineb Seboui, Samar Dabbabi

Abstract:

In this paper, we study the performance of Cu₂ZnSnS₄ (CZTS) based solar cell. In our knowledge, it is for the first time that the FTO/ZnO:Co/CZTS structure is simulated using the SILVACO-Atlas 2D simulation. Cu₂ZnSnS₄ (CZTS), ZnO:Co and FTO (SnO₂:F) layers have been deposited on glass substrates by the spray pyrolysis technique. The extracted physical properties, such as thickness and optical parameters of CZTS layer, are considered to create a new input data of CZTS based solar cell. The optimization of CZTS electron affinity and thickness is performed to have the best FTO/ZnO: Co/CZTS efficiency. The use of CZTS absorber layer with 3.99 eV electron affinity and 3.2 µm in thickness leads to the higher efficiency of 16.86 %, which is very important in the development of new technologies and new solar cell devices.

Keywords: CZTS solar cell, characterization, electron affinity, thickness, SILVACO-atlas 2D simulation

Procedia PDF Downloads 77

Authors: Vallisree Sivathanu, Kumaraswamidhas Lakshmi Annamalai, Trupti Ranjan Lenka

Abstract:

We report a tandem solar cell model with Silicon as the bottom cell absorber material and Cu₂BaSn(S, Se)₄(CBTSSe) as absorber material for the top cell. As a first step, the top and bottom cells were modelled and validated by comparison with the experiment. Once the individual cells are validated, then the tandem structure is modelled with Indium Tin Oxide(ITO) as conducting layer between the top and bottom cells. The tandem structure yielded better open circuit voltage and fill factor; however, the efficiency obtained is 7.01%. The top cell and the bottom cells are investigated with the help of electron-hole current density, photogeneration rate, and external quantum efficiency profiles. In order to minimize the various loss mechanisms in the tandem solar cell, the material parameters are optimized within experimentally achievable limits. Initially, the top cell optimization was carried out; then, the bottom cell is optimized for maximizing the light absorption, and upon minimizing the current and photon losses in the tandem structure, the maximum achievable efficiency is predicted to be 19.52%.

Keywords: CBTSSe, silicon, tandem, solar cell, device modeling, current losses, photon losses

Procedia PDF Downloads 117

Authors: Djaafar F., Hadri B., Bachir G.

Abstract:

We studied mainly the influence of temperature, thickness, molar fraction and the doping of the various layers (emitter, base, BSF and window) on the performances of a photovoltaic solar cell. In a first stage, we optimized the performances of the InGaP/GaAs dual-junction solar cell while varying its operation temperature from 275°K to 375 °K with an increment of 25°C using a virtual wafer fabrication TCAD Silvaco. The optimization at 300°K led to the following result Icc =14.22 mA/cm2, Voc =2.42V, FF =91.32 %, η = 22.76 % which is close with those found in the literature. In a second stage ,we have varied the molar fraction of different layers as well their thickness and the doping of both emitters and bases and we have registered the result of each variation until obtaining an optimal efficiency of the proposed solar cell at 300°K which was of Icc=14.35mA/cm2,Voc=2.47V,FF=91.34,and η =23.33% for In(1-x)Ga(x)P molar fraction( x=0.5).The elimination of a layer BSF on the back face of our cell, enabled us to make a remarkable improvement of the short-circuit current (Icc=14.70 mA/cm2) and a decrease in open circuit voltage Voc and output η which reached 1.46V and 11.97% respectively. Therefore, we could determine the critical parameters of the cell and optimize its various technological parameters to obtain the best performance for a dual junction solar cell. This work opens the way with new prospects in the field of the photovoltaic one. Such structures will thus simplify the manufacturing processes of the cells; will thus reduce the costs while producing high outputs of photovoltaic conversion.

Keywords: modeling, simulation, multijunction, optimization, silvaco ATLAS

Procedia PDF Downloads 620