Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 4

Search results for: H. Mazouz

4 Comparison Between the Radiation Resistance of n/p and p/n InP Solar Cell

Authors: Mazouz Halima, Belghachi Abdrahmane

Abstract:

Effects of electron irradiation-induced deep level defects have been studied on both n/p and p/n indium phosphide solar cells with very thin emitters. The simulation results show that n/p structure offers a somewhat better short circuit current but the p/n structure offers improved circuit voltage, not only before electron irradiation, but also after 1MeV electron irradiation with 5.1015 fluence. The simulation also shows that n/p solar cell structure is more resistant than that of p/n structure.

Keywords: InP solar cell, p/n and n/p structure, electron irradiation, output parameters

Procedia PDF Downloads 392
3 Solar Cell Degradation by Electron Irradiation Effect of Irradiation Fluence

Authors: H. Mazouz, A. Belghachi, F. Hadjaj

Abstract:

Solar cells used in orbit are exposed to radiation environment mainly protons and high energy electrons. These particles degrade the output parameters of the solar cell. The aim of this work is to characterize the effects of electron irradiation fluence on the J (V) characteristic and output parameters of gaAs solar cell by numerical simulation. The results obtained demonstrate that the electron irradiation-induced degradation of performances of the cells concerns mainly the short circuit current.

Keywords: gaAs solar cell, MeV electron irradiation, irradiation fluence, short circuit

Procedia PDF Downloads 354
2 Study of a Fabry-Perot Resonator

Authors: F. Hadjaj, A. Belghachi, A. Halmaoui, M. Belhadj, H. Mazouz

Abstract:

A laser is essentially an optical oscillator consisting of a resonant cavity, an amplifying medium and a pumping source. In semiconductor diode lasers, the cavity is created by the boundary between the cleaved face of the semiconductor crystal and air and also has reflective properties as a result of the differing refractive indices of the two media. For a GaAs-air interface a reflectance of 0.3 is typical and therefore the length of the semiconductor junction forms the resonant cavity. To prevent light, being emitted in unwanted directions from the junction and Sides perpendicular to the required direction are roughened. The objective of this work is to simulate the optical resonator Fabry-Perot and explore its main characteristics, such as FSR, Finesse, Linewidth, Transmission and so on that describe the performance of resonator.

Keywords: Fabry-Perot Resonator, laser diod, reflectance, semiconductor

Procedia PDF Downloads 265
1 A Biomimetic Uncemented Hip Resurfacing Versus Various Biomaterials Hip Resurfacing Implants

Authors: Karima Chergui, Hichem Amrani, Hammoudi Mazouz, Fatiha Mezaache

Abstract:

Cemented femoral resurfacings have experienced a revival for younger and more active patients. Future developments have shown that the uncemented version eliminates failures related to cementing implants. A three-dimensional finite element method (FEM) simulation was carried out in order to exploit a new resurfacing prothesis design named MARMEL, proposed by a recent study with Co–Cr–Mo material, for comparing a hip uncemented resurfacing with a novel carbon fiber/polyamide 12 (CF/PA12) composite to other hip resurfacing implants with various bio materials. From FE analysis, the von Mises stress range for the Composite hip resurfacing was much lower than that in the other hip resurfacing implants used in this comparison. These outcomes showed that the biomimetic hip resurfacing had the potential to reduce stress shielding and prevent from bone fracture compared to conventional hip resurfacing implants.

Keywords: biomechanics, carbon–fibre polyamide 12, finite element analysis, hip resurfacing

Procedia PDF Downloads 239