Search results for: magnetron sputter
87 Investigation of VN/TiN Multilayer Coatings on AZ91D Mg Alloys
Authors: M. Ertas, A. C. Onel, G. Ekinci, B. Toydemir, S. Durdu, M. Usta, L. Colakerol Arslan
Abstract:
To develop AZ91D magnesium alloys with improved properties, we have applied TiN and VN/TiN multilayer coatings using DC magnetron sputter technique. Coating structure, surface morphology, chemical bonding and corrosion resistance of coatings were analyzed by x-ray diffraction (XRD), scanning electron microscope (SEM), x-ray photoelectron spectroscopy (XPS), and tafel extrapolation method, respectively. XPS analysis reveal that VN overlayer reacts with oxygen at the VN/TiN interface and forms more stable TiN layer. Morphological investigations and the corrosion results show that VN/TiN multilayer thin film coatings are quite effective to optimize the corrosion resistance of Mg alloys.Keywords: AZ91D Mg alloys, high corrosion resistance, transition metal nitride coatings, magnetron sputter
Procedia PDF Downloads 47086 A Neural Network System for Predicting the Hardness of Titanium Aluminum Nitrite (TiAlN) Coatings
Authors: Omar M. Elmabrouk
Abstract:
The cutting tool, in the high-speed machining process, is consistently dealing with high localized stress at the tool tip, tip temperature exceeds 800°C and the chip slides along the rake face. These conditions are affecting the tool wear, the cutting tool performances, the quality of the produced parts and the tool life. Therefore, a thin film coating on the cutting tool should be considered to improve the tool surface properties while maintaining its bulks properties. One of the general coating processes in applying thin film for hard coating purpose is PVD magnetron sputtering. In this paper, the prediction of the effects of PVD magnetron sputtering coating process parameters, sputter power in the range of (4.81-7.19 kW), bias voltage in the range of (50.00-300.00 Volts) and substrate temperature in the range of (281.08-600.00 °C), were studied using artificial neural network (ANN). The results were compared with previously published results using RSM model. It was found that the ANN is more accurate in prediction of tool hardness, and hence, it will not only improve the tool life of the tool but also significantly enhances the efficiency of the machining processes.Keywords: artificial neural network, hardness, prediction, titanium aluminium nitrate coating
Procedia PDF Downloads 55085 Improved Qualitative Modeling of the Magnetization Curve B(H) of the Ferromagnetic Materials for a Transformer Used in the Power Supply for Magnetron
Authors: M. Bassoui, M. Ferfra, M. Chrayagne
Abstract:
This paper presents a qualitative modeling for the nonlinear B-H curve of the saturable magnetic materials for a transformer with shunts used in the power supply for the magnetron. This power supply is composed of a single phase leakage flux transformer supplying a cell composed of a capacitor and a diode, which double the voltage and stabilize the current, and a single magnetron at the output of the cell. A procedure consisting of a fuzzy clustering method and a rule processing algorithm is then employed for processing the constructed fuzzy modeling rules to extract the qualitative properties of the curve.Keywords: B(H) curve, fuzzy clustering, magnetron, power supply
Procedia PDF Downloads 23184 Ion Thruster Grid Lifetime Assessment Based on Its Structural Failure
Authors: Juan Li, Jiawen Qiu, Yuchuan Chu, Tianping Zhang, Wei Meng, Yanhui Jia, Xiaohui Liu
Abstract:
This article developed an ion thruster optic system sputter erosion depth numerical 3D model by IFE-PIC (Immersed Finite Element-Particle-in-Cell) and Mont Carlo method, and calculated the downstream surface sputter erosion rate of accelerator grid; Compared with LIPS-200 life test data, the results of the numerical model are in reasonable agreement with the measured data. Finally, we predict the lifetime of the 20cm diameter ion thruster via the erosion data obtained with the model. The ultimate result demonstrates that under normal operating condition, the erosion rate of the grooves wears on the downstream surface of the accelerator grid is 34.6μm⁄1000h, which means the conservative lifetime until structural failure occurring on the accelerator grid is 11500 hours.Keywords: ion thruster, accelerator gird, sputter erosion, lifetime assessment
Procedia PDF Downloads 55483 The Formation of Thin Copper Films on Graphite Surface Using Magnetron Sputtering Method
Authors: Zydrunas Kavaliauskas, Aleksandras Iljinas, Liutauras Marcinauskas, Mindaugas Milieska, Vitas Valincius
Abstract:
The magnetron sputtering deposition method is often used to obtain thin film coatings. The main advantage of magnetron vaporization compared to other deposition methods is the high rate erosion of the cathode material (e.g., copper, aluminum, etc.) and the ability to operate under low-pressure conditions. The structure of the formed coatings depends on the working parameters of the magnetron deposition system, which is why it is possible to influence the properties of the growing film, such as morphology, crystal orientation, and dimensions, stresses, adhesion, etc. The properties of these coatings depend on the distance between the substrate and the magnetron surface, the vacuum depth, the gas used, etc. Using this deposition technology, substrates are most often placed near the anode. The magnetic trap of the magnetrons for localization of electrons in the cathode region is formed using a permanent magnet system that is on the side of the cathode. The scientific literature suggests that, after insertion of a small amount of copper into graphite, the electronic conductivity of graphite increase. The aim of this work is to create thin (up to 300 nm) layers on a graphite surface using a magnetron evaporation method, to investigate the formation peculiarities and microstructure of thin films, as well as the mechanism of copper diffusion into graphite inner layers at different thermal treatment temperatures. The electron scanning microscope was used to investigate the microrelief of the coating surface. The chemical composition is determined using the EDS method, which shows that, with an increase of the thermal treatment of the copper-carbon layer from 200 °C to 400 °C, the copper content is reduced from 8 to 4 % in atomic mass units. This is because the EDS method captures only the amount of copper on the graphite surface, while the temperature of the heat treatment increases part of the copper because of the diffusion processes penetrates into the inner layers of the graphite. The XRD method shows that the crystalline copper structure is not affected by thermal treatment.Keywords: carbon, coatings, copper, magnetron sputtering
Procedia PDF Downloads 28182 Decoration of Multi-Walled Carbon Nanotubes by CdS Nanoparticles Using Magnetron Sputtering Method
Authors: Z. Ghorannevis, E. Akbarnejad, B. Aghazadeh, M. Ghoranneviss
Abstract:
Carbon nanotubes (CNTs) modified with semiconductor nanocrystalline particles may find wide applications due to their unique properties. Here Cadmium Sulfide (CdS) nanoparticles were successfully grown on Multi-Walled Carbon Nanotubes (MWNTs) via a magnetron sputtering method for the first time. The CdS/MWNTs sample was characterized with X-ray diffraction (XRD), Field Emission Scanning and High Resolution Transmission Electron Microscopies (SEM/TEM) and four point probe. The obtained images show clearly the decoration of the MWNTs by the CdS nanoparticles, and the XRD measurements indicate the CdS structure as hexagonal type. Moreover, the physical properties of the CdS/MWNTs were compared with the physical properties of the CdS nanoparticles grown on the silicon. Electrical measurements of CdS and CdS/MWNTs reveal that CdS/MWNTs has lower resistivity than the CdS sample which may be due to the higher carrier concentrations.Keywords: CdS, MWNTs, HRTEM, magnetron sputtering
Procedia PDF Downloads 39781 Unbalanced Cylindrical Magnetron for Accelerating Cavities Coating
Authors: G. Rosaz, V. Semblanet, S. Calatroni, A. Sublet, M. Taborelli
Abstract:
We report in this paper the design and qualification of a cylindrical unbalanced magnetron source. The dedicated magnetic assemblies were simulated using a finite element model. A hall-effect magnetic probe was then used to characterize those assemblies and compared to the theoretical magnetic profiles. These show a good agreement between the expected and actual values. The qualification of the different magnetic assemblies was then performed by measuring the ion flux density reaching the surface of the sample to be coated using a commercial retarding field energy analyzer. The strongest unbalanced configuration shows an increase from 0.016 A.cm-2 to 0.074 A.cm-2 of the ion flux density reaching the sample surface compared to the standard balanced configuration for a pressure 5.10-3 mbar and a plasma source power of 300 W.Keywords: ion energy distribution function, magnetron sputtering, niobium, unbalanced, SRF cavities, thin film
Procedia PDF Downloads 24680 Optical and Electrochromic Properties of All-Solid-State Electrochromic Device Consisting of Amorphous WO₃ and Ni(OH)₂
Authors: Ta-Huang Sun, Ming-Hao Hsieh, Min-Chuan Wang, Der-Jun Jan
Abstract:
Electrochromism refers to the persistent and reversible change of optical properties by an applied voltage pulse. There are many transition metal oxides exhibiting electrochromism, e.g. oxides of W, Ni, Ir, V, Ti, Co and Mo. Organic materials especially some conducting polymers such as poly(aniline), poly(3, 4-propylene- dioxythiophene) also received much attention for electrochromic (EC) applications. Electrochromic materials attract considerable interest because of their potential applications, such as information displays, smart windows, variable reflectance mirrors, and variable-emittance thermal radiators. In this study, the EC characteristics are investigated on an all-solid-state EC device composed of a-WO₃ and Ni(OH)₂ with a Ta₂O₅ protective layer which is prepared by magnetron sputtering. It is found that the transmittance modulation increases with decreasing the film thickness of Ta₂O₅. On the other hand, the transmittance modulation is 57% as the Ni(OH)₂/ITO is prepared by the linear-sweep potential cycling of the sputter-deposited Ta₂O₅/NiO/ITO in a 0.5 M LiClO₄+H₂O electrolyte. However, when Ni(OH)₂/ITO is prepared by a 0.01 M HCl electrolyte, the transmittance modulation of EC device can be improved to 61%.Keywords: electrochromic device, tungsten oxide, nickel, Ta₂O₅
Procedia PDF Downloads 28879 Fabrication of Profile-Coated Rhodium X-Ray Focusing Mirror
Authors: Bing Shi, Raymond A. Conley, Jun Qian, Xianbo Shi, Steve Heald, Lahsen Assoufid
Abstract:
A pair of Kirkpatrick-Baez (KB) mirrors were designed and fabricated for experiments within a hard x-ray energy range lower than 20 kev at beamline 20-ID in a synchrotron radiation facility, Advanced Photon Source (APS). The KB mirrors were deposited with Rhodium thin films using a customized designed and self-built magnetron sputtering system. The purpose of these mirrors is to focus the x-ray beam down to 1 micron. This is the first pair of Rhodium-coated KB mirrors with elliptical shape that was fabricated using the profile coating technique. The profile coating technique is to coat the substrate with designed shape using masks during the deposition. The mirrors were equipped at the beamline and achieved the designed focusing requirement. The details of the mirror design, the fabrication process, and the customized magnetron sputtering deposition system will be discussed.Keywords: magnetron-sputtering deposition, focusing optics, x-ray, rhodium thin film
Procedia PDF Downloads 37078 Reactive Sputter Deposition of Titanium Nitride on Silicon Using a Magnetized Sheet Plasma Source
Authors: Janella Salamania, Marcedon Fernandez, Matthew Villanueva Henry Ramos
Abstract:
Titanium nitrite (TiN) a popular functional and decorative coating because of its golden yellow color, high hardness and superior wear resistance. It is also being studied as a diffusion barrier in integrated circuits due to its known chemical stability and low resistivity. While there have been numerous deposition methods done for TiN, most required the heating of substrates at high temperatures. In this work, TiN films are deposited on silicon (111) and (100) substrates without substrate heating using a patented magnetized sheet plasma source. Films were successfully deposited without substrate heating at various target bias, while maintaining a constant 25% N2 to Ar ratio, and deposition of time of 30 minutes. The resulting films exhibited a golden yellow color which is characteristic of TiN. X-ray diffraction patterns show the formation of TiN predominantly oriented in the (111) direction regardless of substrate used. EDX data also confirms the 1:1 stoichiometry of titanium an nitrogen. Ellipsometry measurements estimate the thickness to range from 28 nm to 33 nm. SEM images were also taken to observe the morphology of the film.Keywords: coatings, nitrides, coatings, reactive magnetron sputtering, thin films
Procedia PDF Downloads 33377 A Fast Chemiresistive H₂ Gas Sensor Based on Sputter Grown Nanocrystalline P-TiO₂ Thin Film Decorated with Catalytic Pd-Pt Layer on P-Si Substrate
Authors: Jyoti Jaiswal, Satyendra Mourya, Gaurav Malik, Ramesh Chandra
Abstract:
In the present work, we have fabricated and studied a resistive H₂ gas sensor based on Pd-Pt decorated room temperature sputter grown nanocrystalline porous titanium dioxide (p-TiO₂) thin film on porous silicon (p-Si) substrate for fast H₂ detection. The gas sensing performance of Pd-Pt/p-TiO₂/p-Si sensing electrode towards H₂ gas under low (10-500 ppm) detection limit and operating temperature regime (25-200 °C) was discussed. The sensor is highly sensitive even at room temperature, with response (Ra/Rg) reaching ~102 for 500 ppm H₂ in dry air and its capability of sensing H₂ concentrations as low as ~10 ppm was demonstrated. At elevated temperature of 200 ℃, the response reached more than ~103 for 500 ppm H₂. Overall the fabricated resistive gas sensor exhibited high selectivity, good sensing response, and fast response/recovery time with good stability towards H₂.Keywords: sputtering, porous silicon (p-Si), TiO₂ thin film, hydrogen gas sensor
Procedia PDF Downloads 25376 Controlling the Degradation Rate of Biodegradable Mg Implant Using Magnetron-Sputtered (Zr-Nb) Thin Films
Authors: Somayeh Azizi, Mohammad Hossein Ehsani, Amir Zareidoost
Abstract:
In this research, a technique has been developed to reduce the corrosion rate of magnesium (Mg) metal by creating Zr-Nb thin film coatings. In this regard, thin-film coatings of niobium (Nb) zirconium (Zr) double alloy are applied on pure Mg specimens under different processes conditions, such as the change of the substrate temperature, substrate bias, and coating thickness using the magnetron sputtering method. Then, deposited coatings are analyzed in terms of surface features via field-emission scanning electron microscopy (FE-SEM), thin-layer X-ray diffraction (GI-XRD), energy-dispersive X-ray spectroscopy (EDS), atomic force microscopy (AFM), and corrosion tests. Also, nano-scratch tests were carried out to investigate the adhesion of the thin film. The results showed that the (Zr-Nb) thin films could control the degradation rate of Mg in the simulated body fluid (SBF). The nano-scratch studies depicted that the (Zr-Nb) thin films have a proper adhesion with the Mg substrate. Therefore, this technique could be used to enhance the corrosion resistance of bare Mg and could result in improving the performance of the biodegradable Mg implant for orthopedic applications.Keywords: (Zr-Nb) thin film, magnetron sputtering, biodegradable Mg, degradation rate
Procedia PDF Downloads 11375 Bifurcation and Chaos of the Memristor Circuit
Authors: Wang Zhulin, Min Fuhong, Peng Guangya, Wang Yaoda, Cao Yi
Abstract:
In this paper, a magnetron memristor model based on hyperbolic sine function is presented and the correctness proved by studying the trajectory of its voltage and current phase, and then a memristor chaotic system with the memristor model is presented. The phase trajectories and the bifurcation diagrams and Lyapunov exponent spectrum of the magnetron memristor system are plotted by numerical simulation, and the chaotic evolution with changing the parameters of the system is also given. The paper includes numerical simulations and mathematical model, which confirming that the system, has a wealth of dynamic behavior.Keywords: memristor, chaotic circuit, dynamical behavior, chaotic system
Procedia PDF Downloads 49374 Growth of Metal Oxide (Tio2/Ag) Thin Films Sputtered by Hipims Effective in Bacterial Inactivation: Plasma Chemistry and Energetic
Authors: O. Baghriche, A. Zertal, C. Pulgarin, J. Kiwi, R. Sanjines
Abstract:
High-Power Impulse Magnetron Sputtering (HIPIMS) is a technology that belongs to the field of Ionized PVD of thin films. This study shows the first complete report on ultrathin TiO2/Ag nano-particulate films sputtered by highly ionized pulsed plasma magnetron sputtering (HIPIMS) leading to fast bacterial loss of viability. The Ag and the TiO2/Ag sputtered films induced complete Escherichia coli inactivation in the dark, which was not observed in the case of TiO2. When Ag was present, the bacterial inactivation was accelerated under low intensity solar simulated light and this has implications for a potential for a practical technology. The design, preparation, testing and surface characterization of these innovative films are described in this study. The HIPIMS sputtered composite films present an appreciable savings in metals compared to films obtained by conventional sputtering methods. HIPIMS sputtering induces a strong interaction with the rugous polyester 3-D structure due to the higher fraction of the Ag-ions (M+) attained in the magnetron chamber. The immiscibility of Ag and TiO2 in the TiO2/Ag films is shown by High Angular Dark Field (HAADF) microscopy. The ionization degree of the film forming species is significantly increased and film growth is assisted by an intense ion flux. Reports have revealed the significant enhancement of the film properties as the HIPIMS technology is used. However, a decrease of the deposition rate, as compared to the conventional DC magnetron sputtering Pulsed (DCMSP) process is commonly observed during HIPIMS.Keywords: E. coli, HIPIMS, inactivation bacterial, sputtering
Procedia PDF Downloads 29673 Fabrication and Characterization of Al2O3 Based Electrical Insulation Coatings Around SiC Fibers
Authors: S. Palaniyappan, P. K. Chennam, M. Trautmann, H. Ahmad, T. Mehner, T. Lampke, G. Wagner
Abstract:
In structural-health monitoring of fiber reinforced plastics (FRPs), every single inorganic fiber sensor that are integrated into the bulk material requires an electrical insulation around itself, when the surrounding reinforcing fibers are electrically conductive. This results in a more accurate data acquisition only from the sensor fiber without any electrical interventions. For this purpose, thin nano-films of aluminium oxide (Al2O3)-based electrical-insulation coatings have been fabricated around the Silicon Carbide (SiC) single fiber sensors through reactive DC magnetron sputtering technique. The sputtered coatings were amorphous in nature and the thickness of the coatings increased with an increase in the sputter time. Microstructural characterization of the coated fibers performed using scanning electron microscopy (SEM) confirmed a homogeneous circumferential coating with no detectable defects or cracks on the surface. X-ray diffraction (XRD) analyses of the as-sputtered and 2 hours annealed coatings (825 & 1125 ˚C) revealed the amorphous and crystalline phases of Al2O3 respectively. Raman spectroscopic analyses produced no characteristic bands of Al2O3, as the thickness of the films was in the nanometer (nm) range, which is too small to overcome the actual penetration depth of the laser used. In addition, the influence of the insulation coatings on the mechanical properties of the SiC sensor fibers has been analyzed.Keywords: Al₂O₃ thin film, electrical insulation coating, PVD process, SiC fibre, single fibre tensile test
Procedia PDF Downloads 11572 Properties of Nanostructured MgB₂ Films Deposited by Magnetron Sputtering
Authors: T. A. Prikhna, A. V. Shaternik, V. E. Moshchil, M. Eisterer, V. E. Shaternik
Abstract:
The paper presents the results of studying the structure, phase composition, relief, and superconducting characteristics of oxygen-containing thin films of magnesium diboride (MgB₂) deposited on a dielectric substrate by magnetron sputtering of diboride-magnesium targets. The possibility of forming films of varying degrees of crystalline perfection and phase composition in the process of precipitation and annealing is shown, depending on the conditions of deposition and annealing. In the films, it is possible to realize various combinations of the Abrikosov vortex pinning centers (in the places of fluctuations of the critical temperature of the superconducting transition (TKeywords: critical current density, diboride, superconducting thin films, upper critical field
Procedia PDF Downloads 10671 Structure and Properties of Intermetallic NiAl-Based Coatings Produced by Magnetron Sputtering Technique
Authors: Tatiana S. Ogneva
Abstract:
Aluminum and nickel-based intermetallic compounds have attracted the attention of scientific community as promising materials for heat-resistant and wear-resistant coatings in such manufacturing areas as microelectronics, aircraft and rocket building and chemical industries. Magnetron sputtering makes possible to coat materials without formation of liquid phase and improves the mechanical and functional properties of nickel aluminides due to the possibility of nanoscale structure formation. The purpose of the study is the investigation of structure and properties of intermetallic coatings produced by magnetron sputtering technique. The feature of this work is the using of composite targets for sputtering, which were consisted of two semicircular sectors of cp-Ni and cp-Al. Plates of alumina, silicon, titanium and steel alloys were used as substrates. To estimate sputtering conditions on structure of intermetallic coatings, a series of samples were produced and studied in detail using scanning and transition electron microcopy and X-Ray diffraction. Besides, nanohardness and scratching tests were carried out. The varying parameters were the distance from the substrate to the target, the duration and the power of the sputtering. The thickness of the obtained intermetallic coatings varied from 0.05 to 0.5 mm depending on the sputtering conditions. The X-ray diffraction data indicated that the formation of intermetallic compounds occurred after sputtering without additional heat treatment. Sputtering at a distance not closer than 120 mm led to the formation of NiAl phase. Increase in the power of magnetron from 300 to 900 W promoted the increase of heterogeneity of the phase composition and the appearance of intermetallic phases NiAl, Ni₂Al₃, NiAl₃, and Al under the aluminum side, and NiAl, Ni₃Al, and Ni under the nickel side of the target. A similar trend is observed with increasing the distance of sputtering from 100 to 60 mm. The change in the phase composition correlates with the changing of the atomic composition of the coatings. Scanning electron microscopy revealed that the coatings have a nanoscale grain structure. In this case, the substrate material and the distance from the substrate to the magnetron have a significant effect on the structure formation process. The size of nanograins differs from 10 to 83 nm and depends not only on the sputtering modes but also on material of a substrate. Nanostructure of the material influences the level of mechanical properties. The highest level of nanohardness of the coatings deposited during 30 minutes on metallic substrates at a distance of 100 mm reached 12 GPa. It was shown that nanohardness depends on the grain size of the intermetallic compound. Scratching tests of the coatings showed a high level of adhesion of the coating to substrate without any delamination and cracking. The results of the study showed that magnetron sputtering of composite targets consisting of nickel and aluminum semicircles makes it possible to form intermetallic coatings with good mechanical properties directly in the process of sputtering without additional heat treatment.Keywords: intermetallic coatings, magnetron sputtering, mechanical properties, structure
Procedia PDF Downloads 11570 Synthesis and Tribological Properties of the Al-Cr-N/MoS₂ Self-Lubricating Coatings by Hybrid Magnetron Sputtering
Authors: Tie-Gang Wang, De-Qiang Meng, Yan-Mei Liu
Abstract:
Ternary AlCrN coatings were widely used to prolong cutting tool life because of their high hardness and excellent abrasion resistance. However, the friction between the workpiece and cutter surface was increased remarkably during machining difficult-to-cut materials (such as superalloy, titanium, etc.). As a result, a lot of cutting heat was generated and cutting tool life was shortened. In this work, an appropriate amount of solid lubricant MoS₂ was added into the AlCrN coating to reduce the friction between the tool and the workpiece. A series of Al-Cr-N/MoS₂ self-lubricating coatings with different MoS₂ contents were prepared by high power impulse magnetron sputtering (HiPIMS) and pulsed direct current magnetron sputtering (Pulsed DC) compound system. The MoS₂ content in the coatings was changed by adjusting the sputtering power of the MoS₂ target. The composition, structure and mechanical properties of the Al-Cr-N/MoS2 coatings were systematically evaluated by energy dispersive spectrometer, scanning electron microscopy, X-ray photoelectron spectroscopy, X-ray diffractometer, nano-indenter tester, scratch tester, and ball-on-disk tribometer. The results indicated the lubricant content played an important role in the coating properties. As the sputtering power of the MoS₂ target was 0.1 kW, the coating possessed the highest hardness 14.1GPa, the highest critical load 44.8 N, and the lowest wear rate 4.4×10−3μm2/N.Keywords: self-lubricating coating, Al-Cr-N/MoS₂ coating, wear rate, friction coefficient
Procedia PDF Downloads 12569 Analysis of Structural and Photocatalytical Properties of Anatase, Rutile and Mixed Phase TiO2 Films Deposited by Pulsed-Direct Current and Radio Frequency Magnetron Co-Sputtering
Authors: S. Varnagiris, M. Urbonavicius, S. Tuckute, M. Lelis, K. Bockute
Abstract:
Amongst many water purification techniques, TiO2 photocatalysis is recognized as one of the most promising sustainable methods. It is known that for photocatalytical applications anatase is the most suitable TiO2 phase, however heterojunction of anatase/rutile phases could improve the photocatalytical activity of TiO2 even further. Despite the relative simplicity of TiO2 different synthesis methods lead to the highly dispersed crystal phases and photocatalytic activity of the corresponding samples. Accordingly, suggestions and investigations of various innovative methods of TiO2 synthesis are still needed. In this work structural and photocatalytical properties of TiO2 films deposited by the unconventional method of simultaneous co-sputtering from two magnetrons powered by pulsed-Direct Current (pDC) and Radio Frequency (RF) power sources with negative bias voltage have been studied. More specifically, TiO2 film thickness, microstructure, surface roughness, crystal structure, optical transmittance and photocatalytical properties were investigated by profilometer, scanning electron microscope, atomic force microscope, X-ray diffractometer and UV-Vis spectrophotometer respectively. The proposed unconventional two magnetron co-sputtering based TiO2 film formation method showed very promising results for crystalline TiO2 film formation while keeping process temperatures below 100 °C. XRD analysis revealed that by using proper combination of power source type and bias voltage various TiO2 phases (amorphous, anatase, rutile or their mixture) can be synthesized selectively. Moreover, strong dependency between power source type and surface roughness, as well as between the bias voltage and band gap value of TiO2 films was observed. Interestingly, TiO2 films deposited by two magnetron co-sputtering without bias voltage had one of the highest band gap values between the investigated films but its photocatalytic activity was superior compared to all other samples. It is suggested that this is due to the dominating nanocrystalline anatase phase with various exposed surfaces including photocatalytically the most active {001}.Keywords: films, magnetron co-sputtering, photocatalysis, TiO₂
Procedia PDF Downloads 11368 Wear Resistance and Thermal Stability of Tungsten Boride Layers Deposited by Magnetron Sputtering
Authors: Justyna Chrzanowska, Jacek Hoffman, Dariusz Garbiec, Łukasz Kurpaska, Piotr Denis, Tomasz Moscicki, Zygmunt Szymanski
Abstract:
Tungsten and boron compounds belong to the group of superhard materials and its hardness could exceed 40 GPa. In this study, the properties of the tungsten boride (WB) layers deposited in magnetron sputtering process are investigated. The sputtering process occurred from specially prepared targets that were composed of boron and tungsten mixed in molar ratio of 2.5 or 4.5 and sintered in spark plasma sintering process. WB layers were deposited on silicon (100) and stainless steel 304 substrates at room temperature (RT) or in 570 °C. Layers deposited in RT and in elevated temperature varied considerably. Layers deposited in RT are amorphous and have low adhesion. In contrast, the layers deposited in 570 °C are crystalline and have good adhesion. All deposited layers have a hardness about 40 GPa. Moreover, the friction coefficient of crystalline layers is 0.22 and wear rate is about 0.67•10-6 mm3N-1m-1. After material characterization the WB layers were annealed in argon atmosphere in 1000 °C for 1 hour. On the basis of X-Ray Diffraction analysis, it has been noted that the crystalline layers are thermally stable and do not change their phase composition, whereas the amorphous layers change their phase composition. Moreover, after annealing, on the surface of WB layers some cracks were observed. It is probably connected with the differences of the thermal expansion between the layer and the substrate. Despite of the presence of cracks, the wear resistance of annealed layers is still higher than the wear resistance of uncoated substrate. The analysis of the structure and properties of tungsten boride layers lead to the discussion about the application area of this material.Keywords: hard coatings, hard materials, magnetron sputtering, mechanical properties, tungsten boride
Procedia PDF Downloads 28567 Multipass Scratch Characterization of TiNbVN Thin Coatings Deposited by Magnetron Sputtering
Authors: Hikmet Cicek
Abstract:
Transition metal nitrides are widely used as protective coatings on machine parts and cutting tools to protect the surfaces from abrasion and corrosion for decades. In this study, the ternary TiNbVN thin coatings were produced with closed field unbalanced magnetron sputtering system and their structural, mechanical and fatigue-like (multi-pass scratch test) properties were investigated. Two different substrates (M2 and H13 steels) were used to explore substrates effects. X-Ray diffractometer, scanning electron microscope, and energy dispersive spectroscopy were used for the structural and chemical analysis of the coatings. Nanohardness tests were proceed for mechanical properties. The fatigue-like properties of the coatings obtained from the multi-scratch test under three different cycle passes. The results showed that TiNbVN films have excellent fatigue resistance and the coatings deposited on M2 steel substrate have higher hardness and better fatigue resistance.Keywords: physical vapor deposition, fatigue, metal nitride, multipass scratch test
Procedia PDF Downloads 20166 Magnetron Sputtered Thin-Film Catalysts with Low Noble Metal Content for Proton Exchange Membrane Water Electrolysis
Authors: Peter Kus, Anna Ostroverkh, Yurii Yakovlev, Yevheniia Lobko, Roman Fiala, Ivan Khalakhan, Vladimir Matolin
Abstract:
Hydrogen economy is a concept of low-emission society which harvests most of its energy from renewable sources (e.g., wind and solar) and in case of overproduction, electrochemically turns the excess amount into hydrogen, which serves as an energy carrier. Proton exchange membrane water electrolyzers (PEMWE) are the backbone of this concept. By fast-response electricity to hydrogen conversion, the PEMWEs will not only stabilize the electrical grid but also provide high-purity hydrogen for variety of fuel cell powered devices, ranging from consumer electronics to vehicles. Wider commercialization of PEMWE technology is however hindered by high prices of noble metals which are necessary for catalyzing the redox reactions within the cell. Namely, platinum for hydrogen evolution reaction (HER), running on cathode, and iridium for oxygen evolution reaction (OER) on anode. Possible way of how to lower the loading of Pt and Ir is by using conductive high-surface nanostructures as catalyst supports in conjunction with thin-film catalyst deposition. The presented study discusses unconventional technique of membrane electron assembly (MEA) preparation. Noble metal catalysts (Pt and Ir) were magnetron sputtered in very low loadings onto the surface of porous sublayers (located on gas diffusion layer or directly on membrane), forming so to say localized three-phase boundary. Ultrasonically sprayed corrosion resistant TiC-based sublayer was used as a support material on anode, whereas magnetron sputtered nanostructured etched nitrogenated carbon (CNx) served the same role on cathode. By using this configuration, we were able to significantly decrease the amount of noble metals (to thickness of just tens of nanometers), while keeping the performance comparable to that of average state-of-the-art catalysts. Complex characterization of prepared supported catalysts includes in-cell performance and durability tests, electrochemical impedance spectroscopy (EIS) as well as scanning electron microscopy (SEM) imaging and X-ray photoelectron spectroscopy (XPS) analysis. Our research proves that magnetron sputtering is a suitable method for thin-film deposition of electrocatalysts. Tested set-up of thin-film supported anode and cathode catalysts with combined loading of just 120 ug.cm⁻² yields remarkable values of specific current. Described approach of thin-film low-loading catalyst deposition might be relevant when noble metal reduction is the topmost priority.Keywords: hydrogen economy, low-loading catalyst, magnetron sputtering, proton exchange membrane water electrolyzer
Procedia PDF Downloads 15765 Ge₁₋ₓSnₓ Alloys with Tuneable Energy Band Gap on GaAs (100) Substrate Manufactured by a Modified Magnetron Co-Sputtering
Authors: Li Qian, Jinchao Tong, Daohua Zhang, Weijun Fan, Fei Suo
Abstract:
Photonic applications based on group IV semiconductors have always been an interest but also a challenge for the research community. We report manufacturing group IV Ge₁₋ₓSnₓ alloys with tuneable energy band gap on (100) GaAs substrate by a modified radio frequency magnetron co-sputtering. Images were taken by atomic force microscope, and scanning electron microscope clearly demonstrates a smooth surface profile, and Ge₁₋ₓSnₓ nano clusters are with the size of several tens of nanometers. Transmittance spectra were measured by Fourier Transform Infrared Spectroscopy that showed changing energy gaps with the variation in elementary composition. Calculation results by 8-band k.p method are consistent with measured gaps. Our deposition system realized direct growth of Ge₁₋ₓSnₓ thin film on GaAs (100) substrate by sputtering. This simple deposition method was modified to be able to grow high-quality photonic materials with tuneable energy gaps. This work provides an alternative and successful method for fabricating Group IV photonic semiconductor materials.Keywords: GeSn, crystal growth, sputtering, photonic
Procedia PDF Downloads 14064 Impact of the Oxygen Content on the Optoelectronic Properties of the Indium-Tin-Oxide Based Transparent Electrodes for Silicon Heterojunction Solar Cells
Authors: Brahim Aissa
Abstract:
Transparent conductive oxides (TCOs) used as front electrodes in solar cells must feature simultaneously high electrical conductivity, low contact resistance with the adjacent layers, and an appropriate refractive index for maximal light in-coupling into the device. However, these properties may conflict with each other, motivating thereby the search for TCOs with high performance. Additionally, due to the presence of temperature sensitive layers in many solar cell designs (for example, in thin-film silicon and silicon heterojunction (SHJ)), low-temperature deposition processes are more suitable. Several deposition techniques have been already explored to fabricate high-mobility TCOs at low temperatures, including sputter deposition, chemical vapor deposition, and atomic layer deposition. Among this variety of methods, to the best of our knowledge, magnetron sputtering deposition is the most established technique, despite the fact that it can lead to damage of underlying layers. The Sn doped In₂O₃ (ITO) is the most commonly used transparent electrode-contact in SHJ technology. In this work, we studied the properties of ITO thin films grown by RF sputtering. Using different oxygen fraction in the argon/oxygen plasma, we prepared ITO films deposited on glass substrates, on one hand, and on a-Si (p and n-types):H/intrinsic a-Si/glass substrates, on the other hand. Hall Effect measurements were systematically conducted together with total-transmittance (TT) and total-reflectance (TR) spectrometry. The electrical properties were drastically affected whereas the TT and TR were found to be slightly impacted by the oxygen variation. Furthermore, the time of flight-secondary ion mass spectrometry (TOF-SIMS) technique was used to determine the distribution of various species throughout the thickness of the ITO and at various interfaces. The depth profiling of indium, oxygen, tin, silicon, phosphorous, boron and hydrogen was investigated throughout the various thicknesses and interfaces, and obtained results are discussed accordingly. Finally, the extreme conditions were selected to fabricate rear emitter SHJ devices, and the photovoltaic performance was evaluated; the lower oxygen flow ratio was found to yield the best performance attributed to lower series resistance.Keywords: solar cell, silicon heterojunction, oxygen content, optoelectronic properties
Procedia PDF Downloads 14963 Strategies to Synthesize Ambient Stable Ultrathin Ag Film Supported on Oxide Substrate
Authors: Allamula Ashok, Peela Lasya, Daljin Jacob, P. Muhammed Razi, Satyesh Kumar Yadav
Abstract:
We report zinc (Zn) as a seed layer material and a need for a specific disposition sequence to grow ultrathin silver (Ag) films on quartz (SiO₂). Ag films of thickness 4, 6, 8 and 10 nm were deposited by DC magnetron sputtering without and with Zn seed layer thickness of 1, 2 and 4 nm. The effect of Zn seed layer thickness and its annealing on the surface morphology, sheet resistance, and stability of ultrathin Ag films is investigated. We show that by increasing Zn seed layer thickness from 1 to 2 nm, there is a 5-order reduction in sheet resistance of 6 nm Ag films. We find that annealing of the seed layer is crucial to achieving stability of ultrathin Ag films. 6 nm Ag film with 2 nm Zn is unstable to 100 oC annealing, while the 6 nm Ag film with annealed 2 nm Zn seed layer is stable. 2 nm Zn seeded 8 nm Ag film maintained a constant sheet resistance of 7 Ω/□ for all 6 months of exposure to ambient conditions. Among the ultrathin film grown, 8nm Ag film with 2nm Zn seed layer had the best figure of merit with sheet resistance of 7 Ω/□, mean absolute surface roughness (Ra) ~1 nm, and optical transparency of 61 %. Such stable exposed ultrathin Ag films can find applications as catalysts, sensors, and transparent and conductive electrodes for solar cells, LEDs and plasmonic devices.Keywords: ultrathin Ag films, magnetron sputtering, thermal stability, seed layer, exposed silver, zinc.
Procedia PDF Downloads 3262 Doped TiO2 Thin Films Microstructural and Electrical Properties
Authors: Mantas Sriubas, Kristina Bockute, Darius Virbukas, Giedrius Laukaitis
Abstract:
In this work, the doped TiO2 (dopants – Ca, Mg) was investigated. The comparison between the physical vapour deposition methods as electron beam vapour deposition and magnetron sputtering was performed and the structural and electrical properties of the formed thin films were investigated. Thin films were deposited on different type of substrates: SiO2, Alloy 600 (Fe-Ni-Cr) and Al2O3 substrates. The structural properties were investigated using Ambios XP-200 profilometer, scanning electron microscope (SEM) Hitachi S-3400N, X-ray energy-dispersive spectroscope (EDS) Quad 5040 (Bruker AXS Microanalysis GmbH), X-ray diffractometer (XRD) D8 Discover (Bruker AXS GmbH) with glancing angles focusing geometry in a 20 – 70° range using the Cu Kα1 λ = 0.1540562 nm radiation). The impedance spectroscopy measurements were performed using Probostat® (NorECs AS) measurement cell in the frequency range from 10-1-106 Hz under reducing and oxidizing conditions in temperature range of 200 °C to 1200 °C. The investigation of the e-beam deposited Ca and Mg doped-TiO2 thin films shows that the thin films are dense without any visible pores and cavities and the thin films grow in zone T according Barna-Adamik SZM. Substrate temperature was kept 600 °C during the deposition and Ts/Tm ≈ 0.32 (substrate temperature (Ts) and coating material melting temperature (Tm)). The surface diffusion is high however, the grain boundary migration is strongly limited at this temperature. This means that structure is inhomogeneous and the columnar structure is mostly visible in the upper part of the films. According to XRD, the increasing of the Ca dopants’ concentration increases the crystallinity of the formed thin films and the crystallites size increase linearly and Ca dopants act as prohibitors. Thin films are comprised of anatase TiO2 phase with an exception of 2 % Ca doped TiO2, where a small peak of Ca arise. In the case of Mg doped-TiO2 the intensities of the XRD peaks decreases with increasing Mg molar concentration. It means that there are less diffraction planes of the particular orientation in thin films with higher impurities concentration. Thus, the crystallinity decreases with increasing Mg concentration and Mg dopants act as inhibitors. The impedance measurements show that the dopants changed the conductivity of the formed thin films. The conductivity varies from 10-3 S/cm to 10-4 S/cm at 800 °C under wet reducing conditions. The microstructure of the magnetron sputtered thin TiO2 films is different comparing to the thin films deposited using e-beam deposition therefore influencing other structural and electrical properties.Keywords: electrical properties, electron beam deposition, magnetron sputtering, microstructure, titanium dioxide
Procedia PDF Downloads 29061 Al-Ti-W Metallic Glass Thin Films Deposited by Magnetron Sputtering Technology to Protect Steel Against Hydrogen Embrittlement
Authors: Issam Lakdhar, Akram Alhussein, Juan Creus
Abstract:
With the huge increase in world energy consumption, researchers are working to find other alternative sources of energy instead of fossil fuel one causing many environmental problems as the production of greenhouse effect gases. Hydrogen is considered a green energy source, which its combustion does not cause environmental pollution. The transport and the storage of the gas molecules or the other products containing this smallest chemical element in metallic structures (pipelines, tanks) are crucial issues. The dissolve and the permeation of hydrogen into the metal lattice lead to the formation of hydride phases and the embrittlement of structures. To protect the metallic structures, a surface treatment could be a good solution. Among the different techniques, magnetron sputtering is used to elaborate micrometric coatings capable of slowing down or stop hydrogen permeation. In the plasma environment, the deposition parameters of new thin-film metallic glasses Al-Ti-W were optimized and controlled in order to obtain, hydrogen barrier. Many characterizations were carried out (SEM, XRD and Nano-indentation…) to control the composition and understand the influence of film microstructure and chemical composition on the hydrogen permeation through the coatings. The coating performance was evaluated under two hydrogen production methods: chemical and electrochemical (cathodic protection) techniques. The hydrogen quantity absorbed was experimentally determined using the Thermal-Desorption Spectroscopy method (TDS)). An ideal ATW thin film was developed and showed excellent behavior against the diffusion of hydrogen.Keywords: thin films, hydrogen, PVD, plasma technology, electrochemical properties
Procedia PDF Downloads 18060 A 1T1R Nonvolatile Memory with Al/TiO₂/Au and Sol-Gel Processed Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor
Authors: Ke-Jing Lee, Cheng-Jung Lee, Yu-Chi Chang, Li-Wen Wang, Yeong-Her Wang
Abstract:
To avoid the cross-talk issue of only resistive random access memory (RRAM) cell, one transistor and one resistor (1T1R) architecture with a TiO₂-based RRAM cell connected with solution barium zirconate nickelate (BZN) organic thin film transistor (OTFT) device is successfully demonstrated. The OTFT were fabricated on a glass substrate. Aluminum (Al) as the gate electrode was deposited via a radio-frequency (RF) magnetron sputtering system. The barium acetate, zirconium n-propoxide, and nickel II acetylacetone were synthesized by using the sol-gel method. After the BZN solution was completely prepared using the sol-gel process, it was spin-coated onto the Al/glass substrate as the gate dielectric. The BZN layer was baked at 100 °C for 10 minutes under ambient air conditions. The pentacene thin film was thermally evaporated on the BZN layer at a deposition rate of 0.08 to 0.15 nm/s. Finally, gold (Au) electrode was deposited using an RF magnetron sputtering system and defined through shadow masks as both the source and drain. The channel length and width of the transistors were 150 and 1500 μm, respectively. As for the manufacture of 1T1R configuration, the RRAM device was fabricated directly on drain electrodes of TFT device. A simple metal/insulator/metal structure, which consisting of Al/TiO₂/Au structures, was fabricated. First, Au was deposited to be a bottom electrode of RRAM device by RF magnetron sputtering system. Then, the TiO₂ layer was deposited on Au electrode by sputtering. Finally, Al was deposited as the top electrode. The electrical performance of the BZN OTFT was studied, showing superior transfer characteristics with the low threshold voltage of −1.1 V, good saturation mobility of 5 cm²/V s, and low subthreshold swing of 400 mV/decade. The integration of the BZN OTFT and TiO₂ RRAM devices was finally completed to form 1T1R configuration with low power consumption of 1.3 μW, the low operation current of 0.5 μA, and reliable data retention. Based on the I-V characteristics, the different polarities of bipolar switching are found to be determined by the compliance current with the different distribution of the internal oxygen vacancies used in the RRAM and 1T1R devices. Also, this phenomenon can be well explained by the proposed mechanism model. It is promising to make the 1T1R possible for practical applications of low-power active matrix flat-panel displays.Keywords: one transistor and one resistor (1T1R), organic thin-film transistor (OTFT), resistive random access memory (RRAM), sol-gel
Procedia PDF Downloads 34559 Resistive Switching in TaN/AlNx/TiN Cell
Authors: Hsin-Ping Huang, Shyankay Jou
Abstract:
Resistive switching of aluminum nitride (AlNx) thin film was demonstrated in a TaN/AlNx/TiN memory cell that was prepared by sputter deposition techniques. The memory cell showed bipolar switching of resistance between +3.5 V and –3.5 V. The resistance ratio of high resistance state (HRS) to low resistance state (HRS), RHRS/RLRS, was about 2 over 100 cycles of endurance test. Both the LRS and HRS of the memory cell exhibited ohmic conduction at low voltages and Poole-Frenkel emission at high voltages. The electrical conduction in the TaN/AlNx/TiN memory cell was possibly attributed to the interactions between charges and defects in the AlNx film.Keywords: aluminum nitride, nonvolatile memory, resistive switching, thin films
Procedia PDF Downloads 39558 The Effect of Aging of ZnO, AZO, and GZO films on the Microstructure and Photoelectric Property
Authors: Zue-Chin Chang
Abstract:
RF magnetron sputtering is used on the ceramic targets, each of which contains zinc oxide (ZnO), zinc oxide doped with aluminum (AZO) and zinc oxide doped with gallium (GZO). The XRD analysis showed a preferred orientation along the (002) plane for ZnO, AZO, and GZO films. The AZO film had the best electrical properties; it had the lowest resistivity of 6.6 × 10-4 cm, the best sheet resistance of 2.2 × 10-1 Ω/square, and the highest carrier concentration of 4.3 × 1020 cm-3, as compared to the ZnO and GZO films.Keywords: aging, films, microstructure, photoelectric property
Procedia PDF Downloads 468