Search results for: anomalous quantum hall effect

Authors: Satyabrata Bera, Mintu Mondal

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Two-dimensional (2D) ferromagnetic materials have garnered significant attention due to their potential to host intriguing scientific phenomena such as the anomalous Hall effect, anomalous Nernst effect, and high transport spin polarization. This study focuses on the investigation of air-stable van der Waals(vdW) ferromagnets, FeGeTe₂ (FₙGT with n = 3, 4, and 5). Particular emphasis is placed on the Fe4GeTe2 (F4GT) compound, which exhibits a complex and fascinating magnetic behavior characterized by two distinct transitions: (i) paramagnetic (PM) to ferromagnetic (FM) around T C ∼ 270 K, and (ii) another spins reorientation transition (SRT) at T SRT ∼ 100 K . Scaling analysis of magnetocaloric effect confirms the second-order character of the ferromagnetic transition, while the same analysis at T SRT suggests that SRT is first-order phase transition. Moreover, the F4GT exhibits a large anomalous Hall conductivity (AHC), ∼ 490 S/cm at 2 K . The near-quadratic behavior of the anomalous Hall resistivity with the longitudinal resistivity suggests that a dominant AHC contribution arises from an intrinsic Berry curvature (BC) mechanism. Electronic structure calculations reveal a significant BC resulting from SOC-induced gapped nodal lines around the Fermi level, thereby giving rise to large AHC. Additionally, we reported exceptionally large anomalous Hall angle (≃ 10.6%) and Hall factor (≃ 0.22 V −1 ) values, the largest observed within this vdW family. The findings presented here, provide valuable insights into the fascinating magnetic and transport properties of 2D ferromagnetic materials, in particular, FₙGT family.

Keywords: 2D vdW ferromagnet, spin reorientation transition, anomalous hall effect, berry curvature

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Authors: Ankush Saxena

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Intrinsic materials with the simultaneous existence of magnetism and topological states are a crucial frontier of quantum materials research. Very recently, Mn₂(Bi/Sb)₂Te₅ has been studied to have the potential to host topological surface states with an intrinsic magnetic order. Here, we studied the magnetic and topological properties of Mn₂Sb₂Te₅ single crystals. The magnetisation measurements evidenced the presence of a spin glass state with field-induced ferromagnetism. Though the heat capacity measurements show the absence of any long-range order, the observed anomalous Hall effect in transverse magneto-transport measurements evidences the ferromagnetic ordering in Mn₂Sb₂Te₅ single crystals. Angle-resolved photoelectron spectroscopy measurements indicate the presence of the topological Dirac cone. Our work provides valuable insights into the magnetism and topological character of Mn₂Sb₂Te₅ and establishes Mn₂(Bi/Sb)₂Te₅ system as a fertile ground to play with magnetism and topological states.

Keywords: topological insulators, quantum materials, anomalous quantum hall effect, ARPES, magneto-transport, susceptibility

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Authors: Bilal Jabakhanji, Dimitris Kazazis, Adrien Michon, Christophe Consejo, Wilfried Desrat, Benoit Jouault

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In this paper, we investigate the electrical properties of graphene grown by Chemical Vapor Deposition (CVD) on the Si face of SiC substrates. Depending on the growth condition, hole or electron doping can be achieved, down to a few 1011cm−2. The high homogeneity of the graphene and the low intrinsic carrier concentration, allow the remarkable observation of the Half Integer Quantum Hall Effect, typical of graphene, at the centimeter scale.

Keywords: graphene, quantum hall effect, chemical vapor, deposition, silicon carbide

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Authors: Nguyen Quang Bau, Nguyen Thu Huong, Dang Thi Thanh Thuy

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The analytic expression for the Hall Coefficient (HC) caused by the confined electrons in the presence of a strong electromagnetic wave (EMW) including the effect of phonon confinement in rectangular quantum wires (RQWs) is calculated by using the quantum kinetic equation for electrons in the case of electron - optical phonon scattering. It is because the expression of the HC for the confined phonon case contains indexes m, m’ which are specific to the phonon confinement. The expression in a RQW is different from that for the case of unconfined phonons in a RQW or in 2D. The results are numerically calculated and discussed for a GaAs/GaAsAl RQW. The numerical results show that HC in a RQW can have both negative and positive values. This is different from the case of the absence of EMW and the case presence of EMW including the effect of phonon unconfinement in a RQW. These results are also compared with those in the case of unconfined phonons in a RQW and confined phonons in a quantum well. The conductivity in the case of confined phonon has more resonance peaks compared with that in case of unconfined phonons in a RQW. This new property is the same in quantum well. All results are compared with the case of unconfined phonons to see differences.

Keywords: Hall coefficient, rectangular quantum wires, electron-optical phonon interaction, quantum kinetic equation, confined phonons

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Authors: Jatindranath Gain, Madhumita DasSarkar, Sudakshina Kundu

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Quantum information is stored in states with multiple quasiparticles, which have a topological degeneracy. Topological quantum computation is concerned with two-dimensional many body systems that support excitations. Anyons are elementary building block of quantum computations. When anyons tunneling in a double-layer system can transition to an exotic non-Abelian state and produce Fibonacci anyons, which are powerful enough for universal topological quantum computation (TQC).Here the exotic behavior of Fibonacci Superlattice is studied by using analytical transfer matrix methods and hence Fibonacci anyons. This Fibonacci anyons can build a quantum computer which is very emerging and exciting field today’s in Nanophotonics and quantum computation.

Keywords: quantum computing, quasicrystals, Multiple Quantum wells (MQWs), transfer matrix method, fibonacci anyons, quantum hall effect, nanophotonics

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Authors: S. Rozhkova, O. Rozhkova, A. Harlova, V. Lasukov

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For optimal unbiased filter as mean-square and in the case of functioning anomalous noises in the observation memory channel, we have proved insensitivity of filter to inaccurate knowledge of the anomalous noise intensity matrix and its equivalence to truncated filter plotted only by non anomalous components of an observation vector.

Keywords: mathematical expectation, filtration, anomalous noise, memory

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Authors: Arnab Roy, P. S. Anil Kumar

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Hall bar magnetic field sensors based on planar hall effect were fabricated from permalloy (Ni¬80Fe20) thin films grown by pulsed laser ablation. As large as 400% planar Hall voltage change was observed for a magnetic field sweep within ±4 Oe, a value comparable with present day TMR sensors at room temperature. A very large planar Hall sensitivity of 1200 Ω/T was measured close to switching fields, which was not obtained so far apart from 2DEG Hall sensors. In summary, a highly sensitive low magnetic field sensor has been constructed which has the added advantage of simple architecture, good signal to noise ratio and robustness.

Keywords: planar hall effect, permalloy, NiFe, pulsed laser ablation, low magnetic field sensor, high sensitivity magnetic field sensor

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Authors: Nguyen Thu Huong, Nguyen Quang Bau

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The Hall Coefficient (HC) and the Magnetoresistance (MR) have been studied in two-dimensional systems. The HC and the MR in Rectangular Quantum Wire (RQW) subjected to a crossed DC electric field and magnetic field in the presence of a Strong Electromagnetic Wave (EMW) characterized by electric field are studied in this work. Using the quantum kinetic equation for electrons interacting with optical phonons, we obtain the analytic expressions for the HC and the MR with a dependence on magnetic field, EMW frequency, temperatures of systems and the length characteristic parameters of RQW. These expressions are different from those obtained for bulk semiconductors and cylindrical quantum wires. The analytical results are applied to GaAs/GaAs/Al. For this material, MR depends on the ratio of the EMW frequency to the cyclotron frequency. Indeed, MR reaches a minimum at the ratio 5/4, and when this ratio increases, it tends towards a saturation value. The HC can take negative or positive values. Each curve has one maximum and one minimum. When magnetic field increases, the HC is negative, achieves a minimum value and then increases suddenly to a maximum with a positive value. This phenomenon differs from the one observed in cylindrical quantum wire, which does not have maximum and minimum values.

Keywords: hall coefficient, rectangular quantum wires, electron-optical phonon interaction, quantum kinetic equation

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Authors: Hyungil Chae

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This work presents a method to reduce spinning current of a Hall-effect sensor for low-power magnetic sensor applications. Spinning current of a Hall-effect sensor changes the direction of bias current periodically and can separate signals from DC-offset. The bias current is proportional to the sensor sensitivity but also increases the power consumption. To achieve both high sensitivity and low power consumption, the bias current can be pulse-width modulated. When the bias current duration Tb is reduced by a factor of N compared to the spinning current period of Tₛ/2, the total power consumption can be saved by N times. N can be large as long as the Hall-effect sensor settles down within Tb. The proposed scheme is implemented and simulated in a 0.18um CMOS process, and the power saving factor is 9.6 when N is 10. Acknowledgements: This work was supported by Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (20160001360022003, Development of Hall Semi-conductor for Smart Car and Device).

Keywords: chopper stabilization, Hall-effect sensor, pulse width modulation, spinning current

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Authors: Kim Jin Sup

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This paper presents a vertical hall effect device using current-mode. Among different geometries that have been studied and simulated using COMSOL Multiphysics, optimized cross-shaped model displayed the best sensitivity. The cross-shaped model emerged as the optimum plate to fit the lowest noise and residual offset and the best sensitivity. The symmetrical cross-shaped hall plate is widely used because of its high sensitivity and immunity to alignment tolerances resulting from the fabrication process. The hall effect device has been designed using a 0.18-μm CMOS technology. The simulation uses the nominal bias current of 12μA. The applied magnetic field is from 0 mT to 20 mT. Simulation results achieved in COMSOL and validated with respect to the electrical behavior of equivalent circuit for Cadence. Simulation results of the one structure over the 13 available samples shows for the best geometry a current-mode sensitivity of 6.6 %/T at 20mT. Acknowledgment: This work was supported by Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (No. R7117-16-0165, Development of Hall Effect Semiconductor for Smart Car and Device).

Keywords: vertical hall device, current-mode, crossed-shaped model, CMOS technology

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Authors: Zelalem Abebe Bekele, Kun Lei, Xiukai Lan, Xiangyu Liu, Hui Wen, Kaiyou Wang

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Spin-polarized currents offer an efficient means of manipulating the magnetization of a ferromagnetic layer for big data and neuromorphic computing. Research has shown that the orbital Hall effect (OHE) can produce orbital currents, potentially surpassing the counter spin currents induced by the spin Hall effect. However, it’s essential to note that orbital currents alone cannot exert torque directly on a ferromagnetic layer, necessitating a conversion process from orbital to spin currents. Here, we present an efficient method for achieving perpendicularly magnetized spin-orbit torque (SOT) switching by harnessing the localized orbital Hall current generated from a Mo layer within a Mo/CoGd device. Our investigation reveals a remarkable enhancement in the interface-induced planar Hall effect (PHE) within the Mo/CoGd bilayer, resulting in the generation of a z-polarized planar current for manipulating the magnetization of CoGd layer without the need for an in-plane magnetic field. Furthermore, the Mo layer induces out-of-plane orbital current, boosting the in-plane and out-of-plane spin polarization by converting the orbital current into spin current within the dual-property CoGd layer. At the optimal Mo layer thickness, a low critical magnetization switching current density of 2.51×10⁶ A cm⁻² is achieved. This breakthrough opens avenues for all-electrical control energy-efficient magnetization switching through orbital current, advancing the field of spin-orbitronics.

Keywords: spin-orbit torque, orbital hall effect, spin hall current, orbital hall current, interface-generated planar hall current, anisotropic magnetoresistance

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Authors: Sergei P. Efimov

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The anomalous magnetic moment of the electron is calculated by introducing the effective mass of the virtual part of the electron structure. In this case, the anomalous moment is inversely proportional to the effective mass Meff, which is shown to be a linear combination of the neutron, proton, and electrostatic electron field masses. The spin of a rotating structure is assumed to be equal to 3/2, while the spin of a 'bare' electron is equal to unity, the resultant spin being 1/2. A simple analysis gives the coefficients for a linear combination of proton and electron masses, the approximation precision giving here nine significant digits after the decimal point. The summand proportional to α² adds four more digits. Thus, the conception of the effective mass Meff leads to the formula for the total magnetic moment of the electron, which is accurate to fourteen digits. Association with the virtual beta-decay reaction and possible reasons for simplicity of the derived formula are discussed.

Keywords: anomalous magnetic moment of electron, comparison with quantum electrodynamics. effective mass, fifteen significant figures, proton and neutron masses

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Authors: Se-Mi Lim, Won-Jae Jung, Jin-Sup Kim, Jun-Seok Park, Hyung-Il Chae

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This paper presents a current-mode vertical hall device (VHD) structure using metal layers in a CMOS process. The proposed metal layer based vertical hall device (MLVHD) utilizes vertical connection among metal layers (from M1 to the top metal) to facilitate hall effect. The vertical metal structure unit flows a bias current Ibias from top to bottom, and an external magnetic field changes the current distribution by Lorentz force. The asymmetric current distribution can be detected by two differential-mode current outputs on each side at the bottom (M1), and each output sinks Ibias/2 ± Ihall. A single vertical metal structure generates only a small amount of hall effect of Ihall due to the short length from M1 to the top metal as well as the low conductivity of the metal, and a series connection between thousands of vertical structure units can solve the problem by providing NxIhall. The series connection between two units is another vertical metal structure flowing current in the opposite direction, and generates negative hall effect. To mitigate the negative hall effect from the series connection, the differential current outputs at the bottom (M1) from one unit merges on the top metal level of the other unit. The proposed MLVHD is simulated in a 3-dimensional model simulator in COMSOL Multiphysics, with 0.35 μm CMOS process parameters. The simulated MLVHD unit size is (W) 10 μm × (L) 6 μm × (D) 10 μm. In this paper, we use an MLVHD with 10 units; the overall hall device size is (W) 10 μm × (L)78 μm × (D) 10 μm. The COMSOL simulation result is as following: the maximum hall current is approximately 2 μA with a 12 μA bias current and 100mT magnetic field; This work was supported by Institute for Information & communications Technology Promotion(IITP) grant funded by the Korea government(MSIP) (No.R7117-16-0165, Development of Hall Effect Semiconductor for Smart Car and Device).

Keywords: CMOS, vertical hall device, current mode, COMSOL

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Authors: Hyunho Shin, Jaekwang Jung, Jeongho Park, Sungwon Hwang

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For the application of graphene quantum dots (GQDs) to optoelectronic nanodevices, it is of critical importance to understand the mechanisms which result in novel phenomena of their light absorption/emission. The optical transitions are known to be available up to ~6 eV in GQDs, especially useful for ultraviolet (UV) photodetectors (PDs). Here, we present size-dependent shape/edge-state variations of GQDs and visible photoluminescence (PL) showing anomalous size dependencies. With varying the average size (da) of GQDs from 5 to 35 nm, the peak energy of the absorption spectra monotonically decreases, while that of the visible PL spectra unusually shows nonmonotonic behaviors having a minimum at diameter ∼17 nm. The PL behaviors can be attributed to the novel feature of GQDs, that is, the circular-to-polygonal-shape and corresponding edge-state variations of GQDs at diameter ∼17 nm as the GQD size increases, as demonstrated by high resolution transmission electron microscopy. We believe that such a comprehensive scheme in designing device architecture and the structural formulation of GQDs provides a device for practical realization of environmentally benign, high performance flexible devices in the future.

Keywords: graphene, quantum dot, size, photoluminescence

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Authors: I. Turk Cakir, A. Senol, A. T. Tasci, O. Cakir

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We study the anomalous WWγ and WWZ couplings by calculating total cross sections of the ep→νqγX and ep→νqZX processes at the LHeC with electron beam energy Ee=140 GeV and the proton beam energy Ep=7 TeV, and at the FCC-ep collider with the polarized electron beam energy Ee=80 GeV and the proton beam energy Ep=50 TeV. At the LHeC with electron beam polarization, we obtain the results for the difference of upper and lower bounds as (0.975, 0.118) and (0.285, 0.009) for the anomalous (Δκγ,λγ) and (Δκz,λz) couplings, respectively. As for FCC-ep collider, these bounds are obtained as (1.101,0.065) and (0.320,0.002) at an integrated luminosity of Lint=100 fb-1.

Keywords: anomalous couplings, future circular collider, large hadron electron collider, W-boson and Z-boson

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Authors: S. Rozhkova, O. Rozhkova, A. Harlova, V. Lasukov

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We have conducted the optimal synthesis of root-mean-squared objective filter to estimate the state vector in the case if within the observation channel with memory the anomalous noises with unknown mathematical expectation are complement in the function of the regular noises. The synthesis has been carried out for linear stochastic systems of continuous-time.

Keywords: mathematical expectation, filtration, anomalous noise, memory

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Authors: Taro Komori, Toshiki Gushi, Akihito Anzai, Taku Hirose, Kaoru Toko, Shinji Isogami, Takashi Suemasu

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Ferrimagnetic antiperovskite Mn₄₋ₓNiₓN thin film exhibits both small saturation magnetization and rather large perpendicular magnetic anisotropy (PMA) when x is small. Both of them are suitable features for application to current induced domain wall motion devices using spin transfer torque (STT). In this work, we successfully grew antiperovskite 30-nm-thick Mn₄₋ₓNiₓN epitaxial thin films on MgO(001) and STO(001) substrates by MBE in order to investigate their crystalline qualities and magnetic and magneto-transport properties. Crystalline qualities were investigated by X-ray diffraction (XRD). The magnetic properties were measured by vibrating sample magnetometer (VSM) at room temperature. Anomalous Hall effect was measured by physical properties measurement system. Both measurements were performed at room temperature. Temperature dependence of magnetization was measured by VSM-Superconducting quantum interference device. XRD patterns indicate epitaxial growth of Mn₄₋ₓNiₓN thin films on both substrates, ones on STO(001) especially have higher c-axis orientation thanks to greater lattice matching. According to VSM measurement, PMA was observed in Mn₄₋ₓNiₓN on MgO(001) when x ≤ 0.25 and on STO(001) when x ≤ 0.5, and MS decreased drastically with x. For example, MS of Mn₃.₉Ni₀.₁N on STO(001) was 47.4 emu/cm³. From the anomalous Hall resistivity (ρAH) of Mn₄₋ₓNiₓN thin films on STO(001) with the magnetic field perpendicular to the plane, we found out Mr/MS was about 1 when x ≤ 0.25, which suggests large magnetic domains in samples and suitable features for DW motion device application. In contrast, such square curves were not observed for Mn₄₋ₓNiₓN on MgO(001), which we attribute to difference in lattice matching. Furthermore, it’s notable that although the sign of ρAH was negative when x = 0 and 0.1, it reversed positive when x = 0.25 and 0.5. The similar reversal occurred for temperature dependence of magnetization. The magnetization of Mn₄₋ₓNiₓN on STO(001) increases with decreasing temperature when x = 0 and 0.1, while it decreases when x = 0.25. We considered that these reversals were caused by magnetic compensation which occurred in Mn₄₋ₓNiₓN between x = 0.1 and 0.25. We expect Mn atoms of Mn₄₋ₓNiₓN crystal have larger magnetic moments than Ni atoms do. The temperature dependence stated above can be explained if we assume that Ni atoms preferentially occupy the corner sites, and their magnetic moments have different temperature dependence from Mn atoms at the face-centered sites. At the compensation point, Mn₄₋ₓNiₓN is expected to show very efficient STT and ultrafast DW motion with small current density. What’s more, if angular momentum compensation is found, the efficiency will be best optimized. In order to prove the magnetic compensation, X-ray magnetic circular dichroism will be performed. Energy dispersive X-ray spectrometry is a candidate method to analyze the accurate composition ratio of samples.

Keywords: compensation, ferrimagnetism, Mn₄N, PMA

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Authors: W. J. Fan, B. S. Ma

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The many-body effect on band structure and optical gain of n+ doping tensile-strained Ge/GeSiSn quantum wells are investigated by using an 8-band k•p method. Phase diagram of Ge/GeSiSn quantum well is obtained. The E-k dispersion curves, band gap renormalization and optical gain spectra including many-body effect will be calculated and discussed. We find that the k.p method without many-body effect will overestimate the optical gain and transition energy.

Keywords: Si photonics, many-body effect, optical gain, Ge-on-Si, Quantum well

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Authors: Lavinia Ciungu

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In the last decades, developing algebras related to the logical foundations of quantum mechanics became a central topic of research. Generally known as quantum structures, these algebras serve as models for the formalism of quantum mechanics. In this work, we introduce the notion of quantum-Wajsberg algebras by redefining the quantum-MV algebras starting from involutive BE algebras. We give a characterization of quantum-Wajsberg algebras, investigate their properties, and show that, in general, quantum-Wajsberg algebras are not (commutative) quantum-B algebras. We also define the ∨-commutative quantum-Wajsberg algebras and study their properties. Furthermore, we prove that any Wajsberg algebra (bounded ∨-commutative BCK algebra) is a quantum-Wajsberg algebra, and we give a condition for a quantum-Wajsberg algebra to be a Wajsberg algebra. We prove that Wajsberg algebras are both quantum-Wajsberg algebras and commutative quantum-B algebras. We establish the connection between quantum-Wajsberg algebras and quantum-MV algebras, proving that the quantum-Wajsberg algebras are term equivalent to quantum-MV algebras. We show that, in general, the quantum-Wajsberg algebras are not commutative quantum-B algebras and if a quantum-Wajsberg algebra is self-distributive, then the corresponding quantum-MV algebra is an MV algebra. Our study could be a starting point for the development of other implicative counterparts of certain existing algebraic quantum structures.

Keywords: quantum-Wajsberg algebra, quantum-MV algebra, MV algebra, Wajsberg algebra, BE algebra, quantum-B algebra

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Authors: Jin Sup Kim, Min Seo

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An improved cross-shaped hall plate with high sensitivity is described in this paper. Among different geometries that have been simulated and measured using Helmholtz coil. The paper describes the physical hall plate design and implementation in a 0.18-µm CMOS technology. In this paper, the biasing is a constant voltage mode. In the voltage mode, magnetic field is converted into an output voltage. The output voltage is typically in the order of micro- to millivolt and therefore, it must be amplified before being transmitted to the outside world. The study, design and performance optimization of hall plate has been carried out with the COMSOL Multiphysics. It is used to estimate the voltage distribution in the hall plate with and without magnetic field and to optimize the geometry. The simulation uses the nominal bias current of 1mA. The applied magnetic field is in the range from 0 mT to 20 mT. Measured results of the one structure over the 10 available samples show for the best sensitivity of 2.5 %/T at 20mT.

Keywords: cross-shaped hall plate, sensitivity, CMOS technology, Helmholtz coil

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Authors: Saurabh Basu, Sudin Ganguly

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Conductance in graphene nanoribbons (GNR) in presence of magnetic (for example, Iron) and non-magnetic (for example, Gold) adatoms are explored theoretically within a Kane-Mele model for their possible spintronic applications and topologically non-trivial properties. In our work, we have considered the magnetic adatoms to induce a Rashba spin-orbit coupling (RSOC) and an exchange bias field, while the non-magnetic ones induce an RSOC and an intrinsic spin-orbit (SO) coupling. Even though RSOC is present in both, they, however, represent very different physical situations, where the magnetic adatoms do not preserve the time reversal symmetry, while the non-magnetic case does. This has important implications on the topological properties. For example, the non-magnetic adatoms, for moderately strong values of SO, the GNR denotes a quantum spin Hall insulator as evident from a 2e²/h plateau in the longitudinal conductance and presence of distinct conducting edge states with an insulating bulk. Since the edge states are protected by time reversal symmetry, the magnetic adatoms in GNR yield trivial insulators and do not possess any non-trivial topological property. However, they have greater utility than the non-magnetic adatoms from the point of view of spintronic applications. Owing to the broken spatial symmetry induced by the presence of adatoms of either type, all the x, y and z components of the spin-polarized conductance become non-zero (only the y-component survives in pristine Graphene owing to a mirror symmetry present there) and hence become suitable for spintronic applications. However, the values of the spin polarized conductances are at least two orders of magnitude larger in the case of magnetic adatoms than their non-magnetic counterpart, thereby ensuring more efficient spintronic applications. Further the applications are tunable by altering the adatom densities.

Keywords: magnetic and non-magnetic adatoms, quantum spin hall phase, spintronic applications, spin polarized conductance, time reversal symmetry

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Authors: Prosper Kudzanai Mushauri

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In issues of anomalous experiences commonly referred to as madness or mental illness, attempts have been made to deal with it so that people manage to live their lives in a more functional way. It is in this stance that psychiatry has sort of portraying itself as seeking to ameliorate perturbations which individuals live with via nosological systems and use of medicine to anomalous experiences. It is from this hegemony that has led to the untold harm which people living with madness have endured from antique to contemporary life. The paper reflects via a literature review on the history of psychiatry and argues that it is akin to contemporary psychiatry to be involved in iatrogenic acts. As antique psychiatry meddled with gory issues of inhumanity, deceit and mass murders which some of those the contemporary psychiatry has not weaned itself from such diabolical acts. The objective of the paper is to suggest to psychiatry that it has not comported to the mores of psychological ethics. In doing this, the paper hopes that psychiatry will reflect and reform its curricular and praxis so that it comports to ethical standards in psychological science in ameliorating anomalous experiences.

Keywords: nosology, psychiatry, madness, diagnosis, eugenics

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Authors: Young-San Shin, Seongsoo Lee

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Hall sensor is widely used to measure rotation angle. When the Hall voltage is measured for linear displacement, it is converted to angular displacement using arctangent function, which requires a large lookup table. In this paper, a lookup table reduction technique is presented for angle measurement. When the input of the lookup table is small within a certain threshold, the change of the outputs with respect to the change of the inputs is relatively small. Thus, several inputs can share same output, which significantly reduce the lookup table size. Its error analysis was also performed, and the threshold was determined so as to maintain the error less than 1°. When the Hall voltage has 11-bit resolution, the lookup table size is reduced from 1,024 samples to 279 samples.

Keywords: hall sensor, angle measurement, lookup table, arctangent

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Authors: Imen Harabi, Hanae Toura, Safa Jemai, Bernabe Mari Soucase

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A promising alternative to traditional Quantum Dots QD materials, which contain toxic heavy elements such as lead and cadmium, sheds light on indium phosphide quantum dots (InP QDs) Owing to improve the quantum yields of photoluminescence and other properties. InP, InP/ZnS core/shell and InP/ZnS/ZnS core/shell/shell Quantum Dots (QDs) were synthetized by the hot injection method. The optical and structural properties of the core InP QDs, InP/ZnS QDs, and InP/ZnS/ZnS QDs have being considered by several techniques such as X-ray diffraction, transmission electron microscopy, optical spectroscopy, and photoluminescence. The average diameter of InP, InP/ZnS, and InP/ZnS/ZnS Quantum Dots (QDs) was varying between 10 nm, 5.4 nm, and 4.10 nm. This experience revealed that the surface morphology of the Quantum Dots has a more regular spherical form with color variation of the QDs in solution. The emission peak of colloidal InP Quantum Dots was around 530 nm, while in InP/ZnS, the emission peak is displayed and located at 598 nm. whilst for InP/ZnS/ZnS is placed at 610 nm. Furthermore, an enhanced PL emission due to a passivation effect in the ZnS-covered InP QDs was obtained. Add the XRD information FWHM of the principal peak of InP QDs was 63 nm, while for InP/ZnS was 41 nm and InP/ZnS/ZnS was 33 nm. The effect of the Zinc stearate precursor concentration on the optical, structural, surface chemical of InP and InP/ZnS and InP/ZnS/ZnS QDs will be discussed.

Keywords: indium phosphide, quantum dot, nanoparticle, core-shell, multishell, luminescence

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Authors: Hoang Van Ngoc, Nguyen Thu Huong, Nguyen Quang Bau

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Using the quantum kinetic equation for electrons interacting with acoustic phonon, the density of the constant current associated with the drag of charge carriers in cylindrical quantum wire by a linearly polarized electromagnetic wave, a DC electric field and a laser radiation field is calculated. The density of the constant current is studied as a function of the frequency of electromagnetic wave, as well as the frequency of laser field and the basic elements of quantum wire with a parabolic potential. The analytic expression of the constant current density is numerically evaluated and plotted for a specific quantum wires GaAs/AlGaAs to show the dependence of the constant current density on above parameters. All these results of quantum wire compared with bulk semiconductors and superlattices to show the difference.

Keywords: The photon-drag effect, the constant current density, quantum wire, parabolic potential

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Authors: Nour Hassan Ismail, Abdelmonem Nassar, Khaled Baz

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Semiconductor crystals smaller than about 10 nm, known as quantum dots, have properties that differ from large samples, including a band gap that becomes larger for smaller particles. These properties create several applications for quantum dots. In this paper, new shapes of quantum dot arrays are used to enhance the photo physical properties of gold nano-particles. This paper presents a study of the effect of nano-particles shape, array, and size on their absorption characteristics.

Keywords: quantum dots, nano-particles, LSPR

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Authors: Viyango Pandian, Kumaresh Athiyappan

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Pelvic congestion Syndrome (PCS) is usually seen in multiparous women who give history of chronic dull-aching pelvic pain. We report a case of a 17 year old unmarried female, who presented with acute onset of chronic dull-aching abdominal pain in the left iliac fossa, which particularly increased during menstruation and was finally diagnosed to be pelvic congestion syndrome. On ultrasonography, multiple tortuous and dilated veins were observed in the left adnexa. Both ovaries appeared normal in size, volume and echotexture. Computed tomography (CT) angiography was performed to precisely delineate the venous pathway and to assess any associated abnormality; which showed a dilated and tortuous left ovarian vein with an anomalous course around the left kidney and draining into the left renal vein. Clinical parameters and hormonal levels were within normal limits. This is a rare case of anomalous course of left ovarian vein associated with pelvic congestion syndrome.

Keywords: anomalous course of ovarian vein, computed tomography, pelvic congestion syndrome, ultrasonography

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Authors: Shashank Gupta, Carlos Cid, William John Munro

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Quantum distillation is the task of concentrating quantum correlations present in N imperfect copies to M perfect copies (M < N) using free operations by involving all P the parties sharing the quantum correlation. We present a threshold quantum distillation task where the same objective is achieved but using lesser number of parties (K < P). In particular, we give an exact local filtering operations by the participating parties sharing high dimension multipartite entangled state to distill the perfect quantum correlation. Later, we bridge a connection between threshold quantum entanglement distillation and quantum steering distillation and show that threshold distillation might work in the scenario where general distillation protocol like DEJMPS does not work.

Keywords: quantum networks, quantum distillation, quantum key distribution, entanglement distillation

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Authors: Noha El Toukhy

Abstract:

The ‘beauty is good” stereotype suggests that people perceive attractive people as having several positive characteristics. Likewise, an “anomalous-is-bad” stereotype is hypothesized to facilitate biases against people with anomalous or less attractive faces. Researchers integrated both into a stereotype content model, which is one of the frameworks used in this study to assess how facial anomalies influence people’s social attitudes and, specifically, people’s ratings of warmth and competence. The mind perception theory, as well as the assessment of animalistic and mechanistic dehumanization against facially anomalous people, are two further frameworks that we are using in this study. This study will test the hypothesis that people have negative attitudes towards people with facial anomalies. We also hypothesize that people have negative biases toward faces with visible differences compared to faces without such differences regardless of the specific type of anomaly, as well as that individual differences in psychological dispositions bear on the expression of the anomalous-is-bad stereotype. Using highly controlled and some never-before-used face stimuli, this pre-registered study examines whether moral character influences perceptions of attractiveness, warmth, and competence for facial anomalies.

Keywords: adolescents, attractiveness, competence, social attitudes, warmth

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Authors: Diego Tancara, Raul Coto, Ariel Norambuena, Hoseein T. Dinani, Felipe Fanchini

Abstract:

Quantum machine learning is a growing research field that aims to perform machine learning tasks assisted by a quantum computer. Kernel-based quantum machine learning models are paradigmatic examples where the kernel involves quantum states, and the Gram matrix is calculated from the overlapping between these states. With the kernel at hand, a regular machine learning model is used for the learning process. In this paper we investigate the quantum support vector machine and quantum kernel ridge models to predict the degree of non-Markovianity of a quantum system. We perform digital quantum simulation of amplitude damping and phase damping channels to create our quantum dataset. We elaborate on different kernel functions to map the data and kernel circuits to compute the overlapping between quantum states. We observe a good performance of the models.

Keywords: quantum, machine learning, kernel, non-markovianity

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