Many-Body Effect on Optical Gain of n+ Doping Tensile-Strained Ge/GeSiSn Quantum Wells

Authors: W. J. Fan, B. S. Ma

Abstract:

The many-body effect on band structure and optical gain of n+ doping tensile-strained Ge/GeSiSn quantum wells are investigated by using an 8-band k•p method. Phase diagram of Ge/GeSiSn quantum well is obtained. The E-k dispersion curves, band gap renormalization and optical gain spectra including many-body effect will be calculated and discussed. We find that the k.p method without many-body effect will overestimate the optical gain and transition energy.

Keywords: Si photonics, many-body effect, optical gain, Ge-on-Si, Quantum well