Search results for: wide band gap semiconductor
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 4217

Search results for: wide band gap semiconductor

4067 Physicochemical and Optical Characterization of Rutile TiO2 Thin Films Grown by APCVD Technique

Authors: Dalila Hocine, Mohammed Said Belkaid, Abderahmane Moussi

Abstract:

In this study, pure rutile TiO2 thin films were directly synthesized on silicon substrates by Atmospheric Pressure Chemical Vapor Deposition technique (APCVD) using TiCl4 as precursor. We studied the physicochemical properties and the optical properties of the produced coatings by means of standard characterization techniques of Fourier Transform Infrared Spectroscopy (FTIR) combined with UV-Vis Reflectance Spectrophotometry. The absorption peaks at 423 cm-1 and 610 cm-1 were observed for the rutile TiO2 thin films, by FTIR measurements. The absorption peak at 739 cm-1 due to the vibration of the Ti-O bonds, was also detected. UV-Vis Reflectance Spectrophotometry is employed for measuring the optical band gap from the measurements of the TiO2 films reflectance. The optical band gap was then extracted from the reflectance data for the TiO2 sample. It was estimated to be 3.05 eV which agrees with the band gap of commercial rutile TiO2 sample.

Keywords: titanium dioxide, physicochemical properties, APCVD, FTIR, band gap

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4066 Electrochemical Synthesis of ZnTe and Cu-ZnTe Thin Films for Low Resistive Ohmic Back Contact for CdS/CdTe Solar Cells

Authors: Shivaji M. Sonawane, N. B. Chaure

Abstract:

ZnTe is direct band gap, the P-type semiconductor with the high absorption coefficient of the order of 104cm-1 is suitable for solar cell development. It can be used as a low resistive ohmic contact to CdS/CdTe or tandem solar cell application. ZnTe and Cu-ZnTe thin film have been electrochemically synthesized on to fluorine-doped tin oxide coated glass substrates using three electrode systems containing Ag/AgCl, graphite and FTO as reference, counter and working electrode respectively were used to deposit the thin films. The aqueous electrolytic solution consist of 0.5M TeO2, 0.2M ZnSO4, and 0.1M Na3C6H5O7:2H2O, 0.1MC6H8O7:H2O and 0.1mMCuSO4 with PH 2.5 at room temperature was used. The reaction mechanism is studied in the cyclic voltammetry to identify the deposition potentials of ZnTe and Cu-ZnTe.The potential was optimized in the range -0,9 to -1,1 V. Vs Ag/AgCl reference electrode. The effect of deposition potential on the structural properties was studied by using X-ray diffraction. The X-ray diffraction result reveled cubic crystal structure of ZnTe with preferential (111) orientation with cubic structure. The surface morphology and film composition were analyzed by means of Scanning electron microscopy (SEM) and Energy Dispersive Analysis of X- Rays (EDAX). The optical absorption measurement has been analyzed for the band gap determination of deposited layers about 2.26 eV by UV-Visible spectroscopy. The drastic change in resistivity has been observed due to incorporation of copper probably due to the diffusion of Cu into grain boundaries.

Keywords: ohmic back contact, zinc telluride, electrodeposition, photovoltaic devices

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4065 Unveiling the Impact of Ultra High Vacuum Annealing Levels on Physico-Chemical Properties of Bulk ZnSe Semiconductor

Authors: Kheira Hamaida, Mohamed Salah Halati

Abstract:

In this current paper, our aim work is to link as possible the obtained simulation results and the other experimental ones, just focusing on the electronic and optical properties of ZnSe. The predictive spectra of the total and partial densities of states using the Full Potential Linearized/Augmented Plane Wave method with the newly Tran-Blaha (TB) modified Becke-Johnson (mBJ) exchange-correlation potential (EXC). So the upper valence energy (UVE) levels contain the relative contribution of Se-(4p and 3d) states with considerable contribution from the electrons of Zn-2s orbital. The dielectric function of w-ZnSe, with its two parts, appears with a noticeable anisotropy character. The microscopic origins of the electronic states that are responsible for the observed peaks in the spectrum are determined through the decomposition of the spectrum to the individual contributions of the electronic transitions between the pairs of bands, where Vi is an occupied state in the valence band, and Ci is an unoccupied state in the conduction band. X-PES (X Ray-Photo Electron Spectroscopy) is an important technique used to probe the homogeneity, stoichiometry, and purity state of the title compound. In order to check the electron transitions derived from simulations and the others from Reflected Electron Energy Loss Spectroscopy (REELS) technique which was of great sensitivity, is used to determine the interband electronic transitions. In the optical window (Eg), all the electron energy states created were also determined through the specific gaussian deconvolution of the photoluminescence spectrum (PLS) that probed under a room temperature (RT).

Keywords: spectroscopy, WIEN2K, IIB-VIA semiconductors, dielectric function

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4064 A Spatial Hypergraph Based Semi-Supervised Band Selection Method for Hyperspectral Imagery Semantic Interpretation

Authors: Akrem Sellami, Imed Riadh Farah

Abstract:

Hyperspectral imagery (HSI) typically provides a wealth of information captured in a wide range of the electromagnetic spectrum for each pixel in the image. Hence, a pixel in HSI is a high-dimensional vector of intensities with a large spectral range and a high spectral resolution. Therefore, the semantic interpretation is a challenging task of HSI analysis. We focused in this paper on object classification as HSI semantic interpretation. However, HSI classification still faces some issues, among which are the following: The spatial variability of spectral signatures, the high number of spectral bands, and the high cost of true sample labeling. Therefore, the high number of spectral bands and the low number of training samples pose the problem of the curse of dimensionality. In order to resolve this problem, we propose to introduce the process of dimensionality reduction trying to improve the classification of HSI. The presented approach is a semi-supervised band selection method based on spatial hypergraph embedding model to represent higher order relationships with different weights of the spatial neighbors corresponding to the centroid of pixel. This semi-supervised band selection has been developed to select useful bands for object classification. The presented approach is evaluated on AVIRIS and ROSIS HSIs and compared to other dimensionality reduction methods. The experimental results demonstrate the efficacy of our approach compared to many existing dimensionality reduction methods for HSI classification.

Keywords: dimensionality reduction, hyperspectral image, semantic interpretation, spatial hypergraph

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4063 Multichannel Scheme under Fairness Environment for Cognitive Radio Networks

Authors: Hans Marquez Ramos, Cesar Hernandez, Ingrid Páez

Abstract:

This paper develops a multiple channel assignment model, which allows to take advantage in most efficient way, spectrum opportunities in cognitive radio networks. Developed scheme allows make several available and frequency adjacent channel assignments, which require a bigger wide band, under an equality environment. The hybrid assignment model it is made by to algorithms, one who makes the ranking and select available frequency channels and the other one in charge of establishing an equality criteria, in order to not restrict spectrum opportunities for all other secondary users who wish to make transmissions. Measurements made were done for average bandwidth, average delay, as well fairness computation for several channel assignment. Reached results were evaluated with experimental spectrum occupational data from GSM frequency band captured. Developed model, shows evidence of improvement in spectrum opportunity use and a wider average transmit bandwidth for each secondary user, maintaining equality criteria in channel assignment.

Keywords: bandwidth, fairness, multichannel, secondary users

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4062 Effect of Manganese Doping Percentage on Optical Band Gap and Conductivity of Copper Sulphide Nano-Films Prepared by Electrodeposition Method

Authors: P. C. Okafor, A. J. Ekpunobi

Abstract:

Mn doped copper sulphide (CuS:Mn) nano-films were deposited on indiums coated tin oxide (ITO) glass substrates using electrodeposition method. Electrodeposition was carried out using bath of PH = 3 at room temperature. Other depositions parameters such as deposition time (DT) are kept constant while Mn doping was varied from 3% to 23%. Absorption spectra of CuS:Mn films was obtained by using JENWAY 6405 UV-VIS -spectrophotometer. Optical band gap (E_g ), optical conductivity (σo) and electrical conductivity (σe) of CuS:Mn films were determined using absorption spectra and appropriate formula. The effect of Mn doping % on these properties were investigated. Results show that film thickness (t) for the 13.27 nm to 18.49 nm; absorption coefficient (α) from 0.90 x 1011 to 1.50 x 1011 optical band gap from 2.29eV to 2.35 eV; optical conductivity from 1.70 x 1013 and electrical conductivity from 160 millions to 154 millions. Possible applications of such films for solar cells fabrication and optoelectronic devices applications were also discussed.

Keywords: copper sulphide (CuS), Manganese (Mn) doping, electrodeposition, optical band gap, optical conductivity, electrical conductivity

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4061 Analysis of Nonlinear Pulse Propagation Characteristics in Semiconductor Optical Amplifier for Different Input Pulse Shapes

Authors: Suchi Barua, Narottam Das, Sven Nordholm, Mohammad Razaghi

Abstract:

This paper presents nonlinear pulse propagation characteristics for different input optical pulse shapes with various input pulse energy levels in semiconductor optical amplifiers. For simulation of nonlinear pulse propagation, finite-difference beam propagation method is used to solve the nonlinear Schrödinger equation. In this equation, gain spectrum dynamics, gain saturation are taken into account which depends on carrier depletion, carrier heating, spectral-hole burning, group velocity dispersion, self-phase modulation and two photon absorption. From this analysis, we obtained the output waveforms and spectra for different input pulse shapes as well as for different input energies. It shows clearly that the peak position of the output waveforms are shifted toward the leading edge which due to the gain saturation of the SOA for higher input pulse energies. We also analyzed and compared the normalized difference of full-width at half maximum for different input pulse shapes in the SOA.

Keywords: finite-difference beam propagation method, pulse shape, pulse propagation, semiconductor optical amplifier

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4060 Urban Land Use Type Analysis Based on Land Subsidence Areas Using X-Band Satellite Image of Jakarta Metropolitan City, Indonesia

Authors: Ratih Fitria Putri, Josaphat Tetuko Sri Sumantyo, Hiroaki Kuze

Abstract:

Jakarta Metropolitan City is located on the northwest coast of West Java province with geographical location between 106º33’ 00”-107º00’00”E longitude and 5º48’30”-6º24’00”S latitude. Jakarta urban area has been suffered from land subsidence in several land use type as trading, industry and settlement area. Land subsidence hazard is one of the consequences of urban development in Jakarta. This hazard is caused by intensive human activities in groundwater extraction and land use mismanagement. Geologically, the Jakarta urban area is mostly dominated by alluvium fan sediment. The objectives of this research are to make an analysis of Jakarta urban land use type on land subsidence zone areas. The process of producing safer land use and settlements of the land subsidence areas are very important. Spatial distributions of land subsidence detection are necessary tool for land use management planning. For this purpose, Differential Synthetic Aperture Radar Interferometry (DInSAR) method is used. The DInSAR is complementary to ground-based methods such as leveling and global positioning system (GPS) measurements, yielding information in a wide coverage area even when the area is inaccessible. The data were fine tuned by using X-Band image satellite data from 2010 to 2013 and land use mapping data. Our analysis of land use type that land subsidence movement occurred on the northern part Jakarta Metropolitan City varying from 7.5 to 17.5 cm/year as industry and settlement land use type areas.

Keywords: land use analysis, land subsidence mapping, urban area, X-band satellite image

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4059 Topochemical Synthesis of Epitaxial Silicon Carbide on Silicon

Authors: Andrey V. Osipov, Sergey A. Kukushkin, Andrey V. Luk’yanov

Abstract:

A method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a topochemical reaction and the reaction product grows in the interior of substrate layer. It opens up new possibilities for the relaxation of the elastic energy due to the attraction of point defects formed during the topochemical reaction in anisotropic media. The presented method of silicon carbide (SiC) formation employs a topochemical reaction between the single-crystalline silicon (Si) substrate and gaseous carbon monoxide (CO). The corresponding theory of interaction of point dilatation centers in anisotropic crystals is developed. It is eliminated that the most advantageous location of the point defects is the direction (111) in crystals with cubic symmetry. The single-crystal SiC films with the thickness up to 200 nm have been grown on Si (111) substrates owing to the topochemical reaction with CO. Grown high-quality single-crystal SiC films do not contain misfit dislocations despite the huge lattice mismatch value of ~20%. Also the possibility of growing of thick wide-gap semiconductor films on these templates SiC/Si(111) and, accordingly, its integration into Si electronics, is demonstrated. Finally, the ab initio theory of SiC formation due to the topochemical reaction has been developed.

Keywords: epitaxy, silicon carbide, topochemical reaction, wide-bandgap semiconductors

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4058 An Investigation into the Isolation and Bandwidth Characteristics of X-Band Chireix Power Amplifier Combiners

Authors: Daniel P. Clayton, Edward A. Ball

Abstract:

This paper describes an investigation into the isolation characteristics and bandwidth performance of RF combiners that are used as part of Chireix PA architectures, designed for use in the X-Band range of frequencies. Combiner designs investigated are the typical Chireix and Wilkinson configurations which also include simulation of the Wilkinson using manufacturer’s data for the isolation resistor. Another simulation was the less common approach of using a Branchline coupler to form the combiner, as well as simulation results from adding an additional stage. This paper presents the findings of this investigation and compares the bandwidth performance and isolation characteristics to determine suitability.

Keywords: bandwidth, Chireix, couplers, outphasing, power amplifiers, Wilkinson, X-Band

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4057 A Fast Convergence Subband BSS Structure

Authors: Salah Al-Din I. Badran, Samad Ahmadi, Ismail Shahin

Abstract:

A blind source separation method is proposed; in this method we use a non-uniform filter bank and a novel normalisation. This method provides a reduced computational complexity and increased convergence speed comparing to the full-band algorithm. Recently, adaptive sub-band scheme has been recommended to solve two problems: reduction of computational complexity and increase the convergence speed of the adaptive algorithm for correlated input signals. In this work the reduction in computational complexity is achieved with the use of adaptive filters of orders less than the full-band adaptive filters, which operate at a sampling rate lower than the sampling rate of the input signal. The decomposed signals by analysis bank filter are less correlated in each sub-band than the input signal at full bandwidth, and can promote better rates of convergence.

Keywords: blind source separation, computational complexity, subband, convergence speed, mixture

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4056 EMI Shielding in Carbon Based Nanocomposites

Authors: Mukul Kumar Srivastava, Sumit Basu

Abstract:

Carbon fiber reinforced polymer (CFRP) composites find wide use in the space and aerospace industries primarily due to their favourable strength-to-weight ratios. However, in spite of the impressive mechanical properties, their ability to shield sophisticated electronics from electromagnetic interference (EMI) is rather limited. As a result, metallic wire meshes or metal foils are often embedded in CFRP composites to provide adequate EMI shielding. This comes at additional manufacturing cost, increased weight and, particularly in cases of aluminium, increased risk of galvanic corrosion in the presence of moisture. In this work, we will explore ways of enhancing EMI shielding of CFRP laminates in the 8-12 GHz range (the so-called X-band), without compromising their mechanical and fracture properties, through minimal modifications to their current well-established fabrication protocol. The computational-experimental study of EMI shielding in CFRP laminates will focus on the effects of incorporating multiwalled carbon nanotubes (MWCNT) and conducting nanoparticles in different ways in the resin and/or carbon fibers. We will also explore the possibility of utilising the excellent absorbing properties of MWCNT reinforced polymer foams to enhance the overall EMI shielding capabilities.

Keywords: EMI shielding, X-band, CFRP, MWCNT

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4055 First and Second Order Gm-C Filters

Authors: Rana Mahmoud

Abstract:

This study represents a systematic study of the Operational Transconductance Amplifiers capacitance (OTA-C) filters or as it is often called Gm-C filters. OTA-C filters have been paid a great attention for the last decades. As Gm-C filters operate in an open loop topology, this makes them flexible to perform in low and high frequencies. As such, Gm-C filters can be used in various wireless communication applications. Another property of Gm-C filters is its electronic tunability, thus different filter frequency characteristics can be obtained without changing the inductance and resistance values. This can be achieved by an OTA (Operational Transconductance Amplifier) and a capacitor. By tuning the OTA transconductance, the cut-off frequency will be tuned and different frequency responses are achieved. Different high-order analog filters can be design using Gm-C filters including low pass, high pass and band pass filters. 1st and 2nd order low pass, high pass and band pass filters are presented in this paper.

Keywords: Gm-C, filters, low-pass, high-pass, band-pass

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4054 Standardized Description and Modeling Methods of Semiconductor IP Interfaces

Authors: Seongsoo Lee

Abstract:

IP reuse is an effective design methodology for modern SoC design to reduce effort and time. However, description and modeling methods of IP interfaces are different due to different IP designers. In this paper, standardized description and modeling methods of IP interfaces are proposed. It consists of 11 items such as IP information, model provision, data type, description level, interface information, port information, signal information, protocol information, modeling level, modeling information, and source file. The proposed description and modeling methods enables easy understanding, simulation, verification, and modification in IP reuse.

Keywords: interface, standardization, description, modeling, semiconductor IP

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4053 Influence of Chemical Treatment on Elastic Properties of the Band Cotton Crepe 100%

Authors: Bachir Chemani, Rachid Halfaoui, Madani Maalem

Abstract:

The manufacturing technology of band cotton is very delicate and depends to choice of certain parameters such as torsion of warp yarn. The fabric elasticity is achieved without the use of any elastic material, chemical expansion, artificial or synthetic and it’s capable of creating pressures useful for therapeutic treatments.Before use, the band is subjected to treatments of specific preparation for obtaining certain elasticity, however, during its treatment, there are some regression parameters. The dependence of manufacturing parameters on the quality of the chemical treatment was confirmed. The aim of this work is to improve the properties of the fabric through the development of manufacturing technology appropriately. Finally for the treatment of the strip pancake 100% cotton, a treatment method is recommended.

Keywords: elastic, cotton, processing, torsion

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4052 Spatial Correlation of Channel State Information in Real Long Range Measurement

Authors: Ahmed Abdelghany, Bernard Uguen, Christophe Moy, Dominique Lemur

Abstract:

The Internet of Things (IoT) is developed to ensure monitoring and connectivity within different applications. Thus, it is critical to study the channel propagation characteristics in Low Power Wide Area Network (LPWAN), especially Long Range Wide Area Network (LoRaWAN). In this paper, an in-depth investigation of the reciprocity between the uplink and downlink Channel State Information (CSI) is done by performing an outdoor measurement campaign in the area of Campus Beaulieu in Rennes. At each different location, the CSI reciprocity is quantified using the Pearson Correlation Coefficient (PCC) which shows a very high linear correlation between the uplink and downlink CSI. This reciprocity feature could be utilized for the physical layer security between the node and the gateway. On the other hand, most of the CSI shapes from different locations are highly uncorrelated from each other. Hence, it can be anticipated that this could achieve significant localization gain by utilizing the frequency hopping in the LoRa systems by getting access to a wider band.

Keywords: IoT, LPWAN, LoRa, effective signal power, onsite measurement

Procedia PDF Downloads 138
4051 Design Ultra Fast Gate Drive Board for Silicon Carbide MOSFET Applications

Authors: Syakirin O. Yong, Nasrudin A. Rahim, Bilal M. Eid, Buray Tankut

Abstract:

The aim of this paper is to develop an ultra-fast gate driver for Silicon Carbide (SiC) based switching device applications such as AC/DC DC/AC converters. Wide bandgap semiconductors such as SiC switches are growing rapidly nowadays due to their numerous capabilities such as faster switching, higher power density and higher voltage level. Wide band-gap switches can work properly on high frequencies such 50-250 kHz which is very useful for many power electronic applications such as solar inverters. Increasing the frequency minimizes the output filter size and system complexity however, this causes huge spike between MOSFET’s drain and source leg which leads to the failure of MOSFET if the voltage rating is exceeded. This paper investigates and concludes the optimum design for a gate drive board for SiC MOSFET switches without causing spikes and noises.

Keywords: PV system, lithium-ion, charger, constant current, constant voltage, renewable energy

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4050 Photocatalytic Oxidation of Gaseous Formaldehyde Using the TiO2 Coated SF Filter

Authors: Janjira Triped, Wipada Sanongraj, Wipawee Khamwichit

Abstract:

The research work covered in this study includes the morphological structure and optical properties of TiO2-coated silk fibroin (SF) filters at 2.5% wt. TiO2/vol. PVA solution. SEM micrographs revealed the fibrous morphology of the TiO2-coated SF filters. An average diameter of the SF fiber was estimated to be approximately 10µm. Also, it was confirmed that TiO2 can be adhered more on SF filter surface at higher TiO2 dosages. The activity of semiconductor materials was studied by UV-VIS spectrophotometer method. The spectral data recorded shows the strong cut off at 390 nm. The calculated band-gap energy was about 3.19 eV. The photocatalytic activity of the filter was tested for gaseous formaldehyde removal in a modeling room with the total volume of 2.66 m3. The highest removal efficiency (54.72 ± 1.75%) was obtained at the initial formaldehyde concentration of about 5.00 ± 0.50ppm.

Keywords: photocatalytic oxidation process, formaldehyde (HCHO), silk fibroin (SF), titanium dioxide (TiO2)

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4049 Electronic and Optical Properties of Orthorhombic NdMnO3 with the Modified Becke-Johnson Potential

Authors: B. Bouadjemi, S. Bentata, T. Lantri, A. Abbad, W. Benstaali, A. Zitouni, S. Cherid

Abstract:

We investigate the electronic structure, magnetic and optical properties of the orthorhombic NdMnO3 through density-functional-theory (DFT) calculations using both generalized gradient approximation GGA and GGA+U approaches, the exchange and correlation effects are taken into account by an orbital independent modified Becke Johnson (MBJ). The predicted band gaps using the MBJ exchange approximation show a significant improvement over previous theoretical work with the common GGA and GGA+U very closer to the experimental results. Band gap dependent optical parameters like dielectric constant, index of refraction, absorption coefficient, reflectivity and conductivity are calculated and analyzed. We find that when using MBJ we have obtained better results for band gap of NdMnO3 than in the case of GGA and GGA+U. The values of band gap founded in this work by MBJ are in a very good agreement with corresponding experimental values compared to other calculations. This comprehensive theoretical study of the optoelectronic properties predicts that this material can be effectively used in optical devices.

Keywords: DFT, optical properties, absorption coefficient, strong correlation, MBJ, orthorhombic NdMnO3, optoelectronic

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4048 Structural, Electronic and Magnetic Properties of Co and Mn Doped CDTE

Authors: A. Zitouni, S. Bentata, B. Bouadjemi, T. Lantri, W. Benstaali, A. Zoubir, S. Cherid, A. Sefir

Abstract:

The structural, electronic, and magnetic properties of transition metal Co and Mn doped zinc-blende semiconductor CdTe were calculated using the density functional theory (DFT) with both generalized gradient approximation (GGA). We have analyzed the structural parameters, charge and spin densities, total and partial densities of states. We find that the Co and Mn doped zinc blende CdTe show half-metallic behavior with a total magnetic moment of 6.0 and 10.0 µB, respectively.The results obtained, make the Co and Mn doped CdTe a promising candidate for application in spintronics.

Keywords: first-principles, half-metallic, diluted magnetic semiconductor, magnetic moment

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4047 Photocatalytic Hydrogen Production, Effect of Metal Particle Size and Their Electronic/Optical Properties on the Reaction

Authors: Hicham Idriss

Abstract:

Hydrogen production from water is one of the most promising methods to secure renewable sources or vectors of energy for societies in general and for chemical industries in particular. At present over 90% of the total amount of hydrogen produced in the world is made from non-renewable fossil fuels (via methane reforming). There are many methods for producing hydrogen from water and these include reducible oxide materials (solar thermal production), combined PV/electrolysis, artificial photosynthesis and photocatalysis. The most promising of these processes is the one relying on photocatalysis; yet serious challenges are hindering its success so far. In order to make this process viable considerable improvement of the photon conversion is needed. Among the key studies that our group has been conducting in the last few years are those focusing on synergism between the semiconductor phases, photonic band gap materials, pn junctions, plasmonic resonance responses, charge transfer to metal cations, in addition to metal dispersion and band gap engineering. In this work results related to phase transformation of the anatase to rutile in the case of TiO2 (synergism), of Au and Ag dispersion (electron trapping and hydrogen-hydrogen recombination centers) as well as their plasmon resonance response (visible light conversion) are presented and discussed. It is found for example that synergism between the two common phases of TiO2 (anatase and rutile) is sensitive to the initial particle size. It is also found, in agreement with previous results, that the rate is very sensitive to the amount of metals (with similar particle size) on the surface unlike the case of thermal heterogeneous catalysis.

Keywords: photo-catalysis, hydrogen production, water splitting, plasmonic

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4046 Combline Cavity Bandpass Filter Design and Implementation Using EM Simulation Tool

Authors: Taha Ahmed Özbey, Sedat Nazlıbilek, Alparslan Çağrı Yapıcı

Abstract:

Combline cavity filters have gained significant attention in recent years due to their exceptional narrowband characteristics, high unloaded Q, remarkable out-of-band rejection, and versatile post-manufacturing tuning capabilities. These filters play a vital role in various wireless communication systems, radar applications, and other advanced technologies where stringent frequency selectivity and superior performance are required. This paper represents combined cavity filter design and implementation by coupling matrix synthesis. Limited filter length, 50 dB out-of-band rejection, and agile design were aimed. To do so, CAD tools and intuitive methods were used.

Keywords: cavity, band pass filter, cavity combline filter, coupling matrix synthesis

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4045 Interesting Behavior of Non-Thermal Plasma Photonic Crystals

Authors: A. Mousavi, S. Sadegzadeh

Abstract:

In this research, the effect of non-thermal micro plasma with non-Maxwellian distribution function on the one dimensional plasma photonic crystals containing alternate plasma-dielectric layers, has been studied. By using Kronig Penny model, the dispersion relation of electromagnetic modes for such a periodic structure is obtained. In this study we take two plasma photonic crystals with different dielectric layers: the first one with Silicon monoxide named PPCI, and the second one with Tellurium dioxide named PPCII. The effects of the plasma layer thickness and the material of the dielectric layer on the plasma photonic crystal band gaps have been illustrated in the dispersion relation and the group velocity figures. Results revealed that in such a system, the non-thermal plasma exerts stronger limit on the wave’s propagation. In another word, for the non-thermal plasma photonic crystals (NPPC), there are two distinct regions in the dispersion plot. The upper region consists of alternate band gaps in such a way that both width and length of the bands decrease gradually as the band gaps order increases. Whereas in the lower region where v_ph > 20 c (for PPCI), waves will not be allowed to propagate.

Keywords: band gap, dispersion relation, non-thermal plasma, plasma photonic crystal

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4044 Comparison of Selected Pier-Scour Equations for Wide Piers Using Field Data

Authors: Nordila Ahmad, Thamer Mohammad, Bruce W. Melville, Zuliziana Suif

Abstract:

Current methods for predicting local scour at wide bridge piers, were developed on the basis of laboratory studies and very limited scour prediction were tested with field data. Laboratory wide pier scour equation from previous findings with field data were presented. A wide range of field data were used and it consists of both live-bed and clear-water scour. A method for assessing the quality of the data was developed and applied to the data set. Three other wide pier-scour equations from the literature were used to compare the performance of each predictive method. The best-performing scour equation were analyzed using statistical analysis. Comparisons of computed and observed scour depths indicate that the equation from the previous publication produced the smallest discrepancy ratio and RMSE value when compared with the large amount of laboratory and field data.

Keywords: field data, local scour, scour equation, wide piers

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4043 Half Mode Substrate Integrated Wave Guide of Band Pass Filter Based to Defected Ground Structure Cells

Authors: Damou Mehdi, Nouri Keltoum, Feham Mohammed, Khazini Mohammed, Bouazza Tayb Habibi Chawki

Abstract:

The Half mode SIW filter is treated by two softwares (HFSS (High Frequency Structure Simulator) and CST (Computer Simulation Technology)). The filter HMSIW has a very simple structure and a very compact size. The simulated results by CST are presented and compared with the results simulated by a high-frequency structure simulator. Good agreement between the simulated CST and simulated results by HFSS is observed. By cascading two of them according to design requirement, a X-band bandpass filter is designed and simulated to meet compact size, low insertion loss, good return loss as well as second harmonic suppression. As an example, we designed the proposed HMSIW filter at X band by HFSS. The filter has a pass-band from 7.3 GHz to 9.8 GHz, and its relative operating fraction bandwidth is 29.5 %. There are one transmission zeros are located at 14.4 GHz.

Keywords: substrate integrated waveguide, filter, HMSIW, defected ground structures (DGS), simulation BPF

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4042 Electrochemical Growth and Properties of Cu2O Nanostructures

Authors: A. Azizi, S. Laidoudi, G. Schmerber, A. Dinia

Abstract:

Cuprous oxide (Cu2O) is a well-known oxide semiconductor with a band gap of 2.1 eV and a natural p-type conductivity, which is an attractive material for device applications because of its abundant availability, non toxicity, and low production cost. It has a higher absorption coefficient in the visible region and the minority carrier diffusion length is also suitable for use as a solar cell absorber layer and it has been explored in junction with n type ZnO for photovoltaic applications. Cu2O nanostructures have been made by a variety of techniques; the electrodeposition method has emerged as one of the most promising processing routes as it is particularly provides advantages such as a low-cost, low temperature and a high level of purity in the products. In this work, Cu2O nanostructures prepared by electrodeposition from aqueous cupric sulfate solution with citric acid at 65°C onto a fluorine doped tin oxide (FTO) coated glass substrates were investigated. The effects of deposition potential on the electrochemical, surface morphology, structural and optical properties of Cu2O thin films were investigated. During cyclic voltammetry experiences, the potential interval where the electrodeposition of Cu2O is carried out was established. The Mott–Schottky (M-S) plot demonstrates that all the films are p-type semiconductors, the flat-band potential and the acceptor density for the Cu2O thin films are determined. AFM images reveal that the applied potential has a very significant influence on the surface morphology and size of the crystallites of thin Cu2O. The XRD measurements indicated that all the obtained films display a Cu2O cubic structure with a strong preferential orientation of the (111) direction. The optical transmission spectra in the UV-Visible domains revealed the highest transmission (75 %), and their calculated gap values increased from 1.93 to 2.24 eV, with increasing potentials.

Keywords: Cu2O, electrodeposition, Mott–Schottky plot, nanostructure, optical properties, XRD

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4041 Fabrication and Characteristics of Ni Doped Titania Nanotubes by Electrochemical Anodization

Authors: J. Tirano, H. Zea, C. Luhrs

Abstract:

It is well known that titanium dioxide is a semiconductor with several applications in photocatalytic process. Its band gap makes it very interesting in the photoelectrodes manufacturing used in photoelectrochemical cells for hydrogen production, a clean and environmentally friendly fuel. The synthesis of 1D titanium dioxide nanostructures, such as nanotubes, makes possible to produce more efficient photoelectrodes for solar energy to hydrogen conversion. In essence, this is because it increases the charge transport rate, decreasing recombination options. However, its principal constraint is to be mainly sensitive to UV range, which represents a very low percentage of solar radiation that reaches earth's surface. One of the alternatives to modifying the TiO2’s band gap and improving its photoactivity under visible light irradiation is to dope the nanotubes with transition metals. This option requires fabricating efficient nanostructured photoelectrodes with controlled morphology and specific properties able to offer a suitable surface area for metallic doping. Hence, currently one of the central challenges in photoelectrochemical cells is the construction of nanomaterials with a proper band position for driving the reaction while absorbing energy over the VIS spectrum. This research focuses on the synthesis and characterization of Nidoped TiO2 nanotubes for improving its photocatalytic activity in solar energy conversion applications. Initially, titanium dioxide nanotubes (TNTs) with controlled morphology were synthesized by two-step potentiostatic anodization of titanium foil. The anodization was carried out at room temperature in an electrolyte composed of ammonium fluoride, deionized water and ethylene glycol. Consequent thermal annealing of as-prepared TNTs was conducted in the air between 450 °C - 550 °C. Afterwards, the nanotubes were superficially modified by nickel deposition. Morphology and crystalline phase of the samples were carried out by SEM, EDS and XRD analysis before and after nickel deposition. Determining the photoelectrochemical performance of photoelectrodes is based on typical electrochemical characterization techniques. Also, the morphological characterization associated electrochemical behavior analysis were discussed to establish the effect of nickel nanoparticles modification on the TiO2 nanotubes. The methodology proposed in this research allows using other transition metal for nanotube surface modification.

Keywords: dimensionally stable electrode, nickel nanoparticles, photo-electrode, TiO₂ nanotubes

Procedia PDF Downloads 151
4040 Effect of the Applied Bias on Mini-Band Structures in Dimer Fibonacci InAs/Ga1-XInXAs Superlattices

Authors: Z. Aziz, S. Terkhi, Y. Sefir, R. Djelti, S. Bentata

Abstract:

The effect of a uniform electric field across multi-barrier systems (InAs/InxGa1-xAs) is exhaustively explored by a computational model using exact Airy function formalism and the transfer-matrix technique. In the case of biased DFHBSL structure a strong reduction in transmission properties was observed and the width of the mini-band structure linearly decreases with the increase of the applied bias. This is due to the confinement of the states in the mini-band structure, which becomes increasingly important (Wannier-Stark Effect).

Keywords: dimer fibonacci height barrier superlattices, singular extended state, exact Airy function and transfer matrix formalism, bioinformatics

Procedia PDF Downloads 258
4039 Compact 3-D Co-Planar Waveguide Fed Dual-Port Ultrawideband-Multiple-Input and Multiple-Output Antenna with WLAN Band-Notched Characteristics

Authors: Asim Quddus

Abstract:

A miniaturized three dimensional co-planar waveguide (CPW) two-port MIMO antenna, exhibiting high isolation and WLAN band-notched characteristics is presented in this paper for ultrawideband (UWB) communication applications. The microstrip patch antenna operates as a single UWB antenna element. The proposed design is a cuboid-shaped structure having compact size of 35 x 27 x 45 mm³. Radiating as well as decoupling structure is placed around cuboidal polystyrene sheet. The radiators are 27 mm apart, placed Face-to-Face in vertical direction. Decoupling structure is placed on the side walls of polystyrene. The proposed antenna consists of an oval shaped radiating patch. A rectangular structure with fillet edges is placed on ground plan to enhance the bandwidth. The proposed antenna exhibits a good impedance match (S11 ≤ -10 dB) over frequency band of 2 GHz – 10.6 GHz. A circular slotted structure is employed as a decoupling structure on substrate, and it is placed on the side walls of polystyrene to enhance the isolation between antenna elements. Moreover, to achieve immunity from WLAN band distortion, a modified, inverted crescent shaped slotted structure is etched on radiating patches to achieve band-rejection characteristics at WLAN frequency band 4.8 GHz – 5.2 GHz. The suggested decoupling structure provides isolation better than 15 dB over the desired UWB spectrum. The envelope correlation coefficient (ECC) and gain for the MIMO antenna are analyzed as well. Finite Element Method (FEM) simulations are carried out in Ansys High Frequency Structural Simulator (HFSS) for the proposed design. The antenna is realized on a Rogers RT/duroid 5880 with thickness 1 mm, relative permittivity ɛr = 2.2. The proposed antenna achieves a stable omni-directional radiation patterns as well, while providing rejection at desired WLAN band. The S-parameters as well as MIMO parameters like ECC are analyzed and the results show conclusively that the design is suitable for portable MIMO-UWB applications.

Keywords: 3-D antenna, band-notch, MIMO, UWB

Procedia PDF Downloads 276
4038 A Dual-Polarized Wideband Probe for Near-Field Antenna Measurement

Authors: K. S. Sruthi

Abstract:

Antennas are one of the most important parts of a communication chain. They are used for both communication and calibration purposes. New developments in probe technologies have enabled near-field probes with much larger bandwidth. The objective of this paper is to design, simulate and fabricate a dual polarized wide band inverted quad ridged shape horn antenna which can be used as measurement probe for near field measurements. The inverted quad-ridged horn antenna probe not only provides measurement in the much wider range but also provides dual-polarization measurement thus enabling antenna developers to measure UWB, UHF, VHF antennas more precisely and at lower cost. The antenna is designed to meet the characteristics such as high gain, light weight, linearly polarized with suppressed side lobes for near-field measurement applications. The proposed antenna is simulated with commercially available packages such as Ansoft HFSS. The antenna gives a moderate gain over operating range while delivering a wide bandwidth.

Keywords: near-field antenna measurement, inverted quad-ridge horn antenna, wideband Antennas, dual polarized antennas, ansoft HFSS

Procedia PDF Downloads 395