Search results for: dimer fibonacci height barrier superlattices
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2178

Search results for: dimer fibonacci height barrier superlattices

2178 Formation of Miniband Structure in Dimer Fibonacci GaAs/Ga1-XAlXAs Superlattices

Authors: Aziz Zoubir, Sefir Yamina, Djelti Redouan, Bentata Samir

Abstract:

The effect of a uniform electric field across multibarrier systems (GaAs/AlxGa1-xAs) is exhaustively explored by a computational model using exact Airy function formalism and the transfer-matrix technique. In the case of biased Dimer Fibonacci Height Barrier superlattices (DFHBSL) structure a strong reduction in transmission properties was observed and the width of the miniband structure linearly decreases with the increase of the applied bias. This is due to the confinement of the states in the miniband structure, which becomes increasingly important (Wannier-Stark effect).

Keywords: Dimer Fibonacci Height Barrier superlattices, singular extended states, exact Airy function, transfer matrix formalism

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2177 Effect of the Applied Bias on Mini-Band Structures in Dimer Fibonacci InAs/Ga1-XInXAs Superlattices

Authors: Z. Aziz, S. Terkhi, Y. Sefir, R. Djelti, S. Bentata

Abstract:

The effect of a uniform electric field across multi-barrier systems (InAs/InxGa1-xAs) is exhaustively explored by a computational model using exact Airy function formalism and the transfer-matrix technique. In the case of biased DFHBSL structure a strong reduction in transmission properties was observed and the width of the mini-band structure linearly decreases with the increase of the applied bias. This is due to the confinement of the states in the mini-band structure, which becomes increasingly important (Wannier-Stark Effect).

Keywords: dimer fibonacci height barrier superlattices, singular extended state, exact Airy function and transfer matrix formalism, bioinformatics

Procedia PDF Downloads 253
2176 Effect of the Applied Bias on Miniband Structures in Dimer Fibonacci Inas/Ga1-Xinxas Superlattices

Authors: Z. Aziz, S. Terkhi, Y. Sefir, R. Djelti, S. Bentata

Abstract:

The effect of a uniform electric field across multibarrier systems (InAs/InxGa1-xAs) is exhaustively explored by a computational model using exact airy function formalism and the transfer-matrix technique. In the case of biased DFHBSL structure a strong reduction in transmission properties was observed and the width of the miniband structure linearly decreases with the increase of the applied bias. This is due to the confinement of the states in the miniband structure, which becomes increasingly important (Wannier-Stark Effect).

Keywords: dimer fibonacci height barrier superlattices, singular extended state, exact airy function, transfer matrix formalism

Procedia PDF Downloads 265
2175 Effect of the Structural Parameters on Subbands of Fibonacci AlxGa1-xAs/GaAs Superlattices

Authors: Y. Sefir, Z. Aziz, S. Cherid, Z. F. Meghoufel, F. Bendahama, S. Terkhi, B. Bouadjemi. A. Zitouni S. Bentata

Abstract:

This work is to study the effect of the variation of structural parameters on the band structure in the quasiperiodic Fibonacci superlattices AlxGa1-xAs/GaAs using the formalism of the transfer matrix and Airy function. Our results show that increasing the width of Fibonacci’s wells of allows to the confinement of subminibands with a widening of minigaps, this causes a consistent and coherent fragmentation. The barrier thickness of Fibonacci bf acts on the width of subminibands by controlling the interaction force between neighboring eigenstates. Its increase gives rise to singularly extended states. The barrier height Fibonacci Vf permit to control the degree of structural disorder in these structures. The variation of these parameters permits the design of laser with modulated wavelength.

Keywords: transmission coefficient – Quasiperiodic superlattices- singularly localized and extended states- structural parameters- Laser with modulated wavelength

Procedia PDF Downloads 334
2174 Study of Quantum Lasers of Random Trimer Barrier AlxGa1-xAs Superlattices

Authors: Bentata Samir, Bendahma Fatima

Abstract:

We have numerically studied the random trimer barrier AlxGa1-xAs superlattices (RTBSL). Such systems consist of two different structures randomly distributed along the growth direction, with the additional constraint that the barriers of one kind appear in triply. An explicit formula is given for evaluating the transmission coefficient of superlattices (SL's) in intentional correlated disorder. We have specially investigated the effect of aluminum concentration on the laser wavelength. We discuss the impact of the aluminum concentration associated with the structure profile on the laser wavelengths.

Keywords: superlattices, transfer matrix method, transmission coefficient, quantum laser

Procedia PDF Downloads 447
2173 Effect of the Aluminium Concentration on the Laser Wavelength of Random Trimer Barrier AlxGa1-xAs Superlattices

Authors: Samir Bentata, Fatima Bendahma

Abstract:

We have numerically investigated the effect of Aluminium concentration on the the laser wavelength of random trimer barrier AlxGa1-xAs superlattices (RTBSL). Such systems consist of two different structures randomly distributed along the growth direction, with the additional constraint that the barriers of one kind appear in triply. An explicit formula is given for evaluating the transmission coefficient of superlattices (SL's) with intentional correlated disorder. The method is based on Airy function formalism and the transfer-matrix technique. We discuss the impact of the Aluminium concentration associate to the structure profile on the laser wavelengths.

Keywords: superlattices, correlated disorder, transmission coefficient, laser wavelength

Procedia PDF Downloads 302
2172 Temperature-Dependent Barrier Characteristics of Inhomogeneous Pd/n-GaN Schottky Barrier Diodes Surface

Authors: K. Al-Heuseen, M. R. Hashim

Abstract:

The current-voltage (I-V) characteristics of Pd/n-GaN Schottky barrier were studied at temperatures over room temperature (300-470K). The values of ideality factor (n), zero-bias barrier height (φB0), flat barrier height (φBF) and series resistance (Rs) obtained from I-V-T measurements were found to be strongly temperature dependent while (φBo) increase, (n), (φBF) and (Rs) decrease with increasing temperature. The apparent Richardson constant was found to be 2.1x10-9 Acm-2K-2 and mean barrier height of 0.19 eV. After barrier height inhomogeneities correction, by assuming a Gaussian distribution (GD) of the barrier heights, the Richardson constant and the mean barrier height were obtained as 23 Acm-2K-2 and 1.78eV, respectively. The corrected Richardson constant was very closer to theoretical value of 26 Acm-2K-2.

Keywords: electrical properties, Gaussian distribution, Pd-GaN Schottky diodes, thermionic emission

Procedia PDF Downloads 237
2171 Effect of Spatially Correlated Disorder on Electronic Transport Properties of Aperiodic Superlattices (GaAs/AlxGa1-xAs)

Authors: F. Bendahma, S. Bentata, S. Cherid, A. Zitouni, S. Terkhi, T. Lantri, Y. Sefir, Z. F. Meghoufel

Abstract:

We examine the electronic transport properties in AlxGa1-xAs/GaAs superlattices. Using the transfer-matrix technique and the exact Airy function formalism, we investigate theoretically the effect of structural parameters on the electronic energy spectra of trimer thickness barrier (TTB). Our numerical calculations showed that the localization length of the states becomes more extended when the disorder is correlated (trimer case). We have also found that the resonant tunneling time (RTT) is of the order of several femtoseconds.

Keywords: electronic transport properties, structural parameters, superlattices, transfer-matrix technique

Procedia PDF Downloads 251
2170 Effect of the Aluminum Fraction “X” on the Laser Wavelengths in GaAs/AlxGa1-xAs Superlattices

Authors: F.Bendahma, S.Bentata

Abstract:

In this paper, we study numerically the eigenstates existing in a GaAs/AlxGa1-xAs superlattice with structural disorder in trimer height barrier (THB). Aluminium concentration x takes at random two different values, one of them appears only in triply and remains inferior to the second in the studied structure. In spite of the presence of disorder, the system exhibits two kinds of sets of propagating states lying below the barrier due to the characteristic structure of the superlattice. This result allows us to note the existence of a single laser emission in trimer and wavelengths are obtained in the mid-infrared.

Keywords: infrared (IR), laser emission, superlattice, trimer

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2169 Aperiodic and Asymmetric Fibonacci Quasicrystals: Next Big Future in Quantum Computation

Authors: Jatindranath Gain, Madhumita DasSarkar, Sudakshina Kundu

Abstract:

Quantum information is stored in states with multiple quasiparticles, which have a topological degeneracy. Topological quantum computation is concerned with two-dimensional many body systems that support excitations. Anyons are elementary building block of quantum computations. When anyons tunneling in a double-layer system can transition to an exotic non-Abelian state and produce Fibonacci anyons, which are powerful enough for universal topological quantum computation (TQC).Here the exotic behavior of Fibonacci Superlattice is studied by using analytical transfer matrix methods and hence Fibonacci anyons. This Fibonacci anyons can build a quantum computer which is very emerging and exciting field today’s in Nanophotonics and quantum computation.

Keywords: quantum computing, quasicrystals, Multiple Quantum wells (MQWs), transfer matrix method, fibonacci anyons, quantum hall effect, nanophotonics

Procedia PDF Downloads 342
2168 First Digit Lucas, Fibonacci and Benford Number in Financial Statement

Authors: Teguh Sugiarto, Amir Mohamadian Amiri

Abstract:

Background: This study aims to explore if there is fraud in the company's financial report distribution using the number first digit Lucas, Fibonacci and Benford. Research methods: In this study, the author uses a number model contained in the first digit of the model Lucas, Fibonacci and Benford, to make a distinction between implementation by using the scale above and below 5%, the rate of occurrence of a difference against the digit number contained on Lucas, Fibonacci and Benford. If there is a significant difference above and below 5%, then the process of follow-up and detection of occurrence of fraud against the financial statements can be made. Findings: From research that has been done can be concluded that the number of frequency levels contained in the financial statements of PT Bank BRI Tbk in a year in the same conscientious results for model Lucas, Fibonacci and Benford.

Keywords: Lucas, Fibonacci, Benford, first digit

Procedia PDF Downloads 240
2167 Chebyshev Polynomials Relad with Fibonacci and Lucas Polynomials

Authors: Vandana N. Purav

Abstract:

Fibonacci and Lucas polynomials are special cases of Chebyshev polynomial. There are two types of Chebyshev polynomials, a Chebyshev polynomial of first kind and a Chebyshev polynomial of second kind. Chebyshev polynomial of second kind can be derived from the Chebyshev polynomial of first kind. Chebyshev polynomial is a polynomial of degree n and satisfies a second order homogenous differential equation. We consider the difference equations which are related with Chebyshev, Fibonacci and Lucas polynomias. Thus Chebyshev polynomial of second kind play an important role in finding the recurrence relations with Fibonacci and Lucas polynomials.

Keywords:

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2166 Characterization of current–voltage (I–V) and capacitance–voltage–frequency (C–V–f) features of Au/GaN Schottky diodes

Authors: Abdelaziz Rabehi

Abstract:

The current–voltage (I–V) characteristics of Au/GaN Schottky diodes were measured at room temperature. In addition, capacitance–voltage–frequency (C–V–f) characteristics are investigated by considering the interface states (Nss) at frequency range 100 kHz to 1 MHz. From the I–V characteristics of the Schottky diode, ideality factor (n) and barrier height (Φb) values of 1.22 and 0.56 eV, respectively, were obtained from a forward bias I–V plot. In addition, the interface states distribution profile as a function of (Ess − Ev) was extracted from the forward bias I–V measurements by taking into account the bias dependence of the effective barrier height (Φe) for the Schottky diode. The C–V curves gave a barrier height value higher than those obtained from I–V measurements. This discrepancy is due to the different nature of the I–V and C–V measurement techniques.

Keywords: Schottky diodes, frequency dependence, barrier height, interface states

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2165 The Combination Of Aortic Dissection Detection Risk Score (ADD-RS) With D-dimer As A Diagnostic Tool To Exclude The Diagnosis Of Acute Aortic Syndrome (AAS)

Authors: Mohamed Hamada Abdelkader Fayed

Abstract:

Background: To evaluate the diagnostic accuracy of (ADD-RS) with D-dimer as a screening test to exclude AAS. Methods: We conducted research for the studies examining the diagnostic accuracy of (ADD- RS)+ D-dimer to exclude the diagnosis of AAS, We searched MEDLINE, Embase, and Cochrane of Trials up to 31 December 2020. Results: We identified 3 studies using (ADD-RS) with D-dimer as a diagnostic tool for AAS, involving 3261 patients were AAS was diagnosed in 559(17.14%) patients. Overall results showed that the pooled sensitivities were 97.6 (95% CI 0.95.6, 99.6) at (ADD-RS)≤1(low risk group) with D-dimer and 97.4(95% CI 0.95.4,, 99.4) at (ADD-RS)>1(High risk group) with D-dimer., the failure rate was 0.48% at low risk group and 4.3% at high risk group respectively. Conclusions: (ADD-RS) with D-dimer was a useful screening test with high sensitivity to exclude Acute Aortic Syndrome.

Keywords: aortic dissection detection risk score, D-dimer, acute aortic syndrome, diagnostic accuracy

Procedia PDF Downloads 182
2164 Ballistic Transport in One-Dimensional Random Dimer Photonic Crystals

Authors: Samira Cherid, Samir Bentata, F. Zahira Meghoufel, Sabria Terkhi, Yamina Sefir, Fatima Bendahma, Bouabdellah Bouadjemi, Ali Z. Itouni

Abstract:

In this work, we examined the propagation of light in one-dimensional systems is examined by means of the random dimer model. The introduction of defect elements, randomly in the studied system, breaks down the Anderson localization and provides a set of propagating delocalized modes at the corresponding conventional dimer resonances. However, tuning suitably the defect dimer resonance on the host ones (or vice versa), the transmission magnitudes can be enhanced providing the optimized ballistic transmission regime as an average response. Hence, ballistic optical filters can be conceived at desired wavelengths.

Keywords: photonic crystals, random dimer model, ballistic resonance, localization and transmission

Procedia PDF Downloads 477
2163 Double Gaussian Distribution of Nonhomogeneous Barrier Height in Metal/n-type GaN Schottky Contacts

Authors: M. Mamor

Abstract:

GaN-based compounds have attracted much interest in the fabrication of high-power, high speed and high-frequency electronic devices. Other examples of GaN-based applications are blue and ultraviolet (UV) light-emitting diodes (LEDs). All these devices require high-quality ohmic and Schottky contacts. Gaining an understanding of the electrical characteristics of metal/GaN contacts is of fundamental and technological importance for developing GaN-based devices. In this work, the barrier characteristics of Pt and Pd Schottky contacts on n-type GaN were studied using temperature-dependent forward current-voltage (I-V) measurements over a wide temperature range 80–400 K. Our results show that the barrier height and ideality factor, extracted from the forward I-V characteristics based on thermionic emission (TE) model, exhibit an abnormal dependence with temperature; i.e., by increasing temperature, the barrier height increases whereas the ideality factor decreases. This abnormal behavior has been explained based on the TE model by considering the presence of double Gaussian distribution (GD) of nonhomogeneous barrier height at the metal/GaN interface. However, in the high-temperature range (160-400 K), the extracted value for the effective Richardson constant A* based on the barrier inhomogeneity (BHi) model is found in fair agreement with the theoretically predicted value of about 26.9 A.cm-2 K-2 for n-type GaN. This result indicates that in this temperature range, the conduction current transport is dominated by the thermionic emission mode. On the other hand, in the lower temperature range (80-160 K), the corresponding effective Richardson constant value according to the BHi model is lower than the theoretical value, suggesting the presence of other current transport, such as tunneling-assisted mode at lower temperatures.

Keywords: Schottky diodes, inhomogeneous barrier height, GaN semiconductors, Schottky barrier heights

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2162 In Agile Projects - Arithmetic Sequence is More Effective than Fibonacci Sequence to Use for Estimating the Implementation Effort of User Stories

Authors: Khaled Jaber

Abstract:

The estimation of effort in software development is a complex task. The traditional Waterfall approach used to develop software systems requires a lot of time to estimate the effort needed to implement user requirements. Agile manifesto, however, is currently more used in the industry than the Waterfall to develop software systems. In Agile, the user requirement is referred to as a user story. Agile teams mostly use the Fibonacci sequence 1, 2, 3, 5, 8, 11, etc. in estimating the effort needed to implement the user story. This work shows through analysis that the Arithmetic sequence, e.g., 3, 6, 9, 12, etc., is more effective than the Fibonacci sequence in estimating the user stories. This paper mathematically and visually proves the effectiveness of the Arithmetic sequence over the FB sequence.

Keywords: agie, scrum, estimation, fibonacci sequence

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2161 Study of Hydrocarbons Metering Issues in Algerian Fields under the New Law Context

Authors: A. Hadjadj, S. Maamir

Abstract:

Since the advent of the law 86/14 concerning the
exploitation of the national territory by foreign companies in
partnership with the Algerian oil and gas company, the problem of
hydrocarbons metering in the sharing production come out.
More generally, good management counting hydrocarbons can
provide data on the production wells, the field and the reservoir for
medium and long term planning, particularly in the context of the
management and field development.
In this work, we are interested in the transactional metering which
is a very delicate and crucial period in the current context of the new
hydrocarbon’s law characterized by assets system between the
various activities of Sonatrach and its foreign partners.
After a state of the art on hydrocarbons metering devices in
Algeria and elsewhere, we will decline the advantages and
disadvantages of each system, and then we describe the problem to
try to reach an optimal solution.

Keywords: transactional metering, flowmeter orifice, heat flow, Sonatrach

Procedia PDF Downloads 328
2160 The Fibonacci Network: A Simple Alternative for Positional Encoding

Authors: Yair Bleiberg, Michael Werman

Abstract:

Coordinate-based Multi-Layer Perceptrons (MLPs) are known to have difficulty reconstructing high frequencies of the training data. A common solution to this problem is Positional Encoding (PE), which has become quite popular. However, PE has drawbacks. It has high-frequency artifacts and adds another hyper hyperparameter, just like batch normalization and dropout do. We believe that under certain circumstances, PE is not necessary, and a smarter construction of the network architecture together with a smart training method is sufficient to achieve similar results. In this paper, we show that very simple MLPs can quite easily output a frequency when given input of the half-frequency and quarter-frequency. Using this, we design a network architecture in blocks, where the input to each block is the output of the two previous blocks along with the original input. We call this a Fibonacci Network. By training each block on the corresponding frequencies of the signal, we show that Fibonacci Networks can reconstruct arbitrarily high frequencies.

Keywords: neural networks, positional encoding, high frequency intepolation, fully connected

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2159 Application of Golden Ratio in Contemporary Textile Industry and Its Effect on Consumer Preferences

Authors: Rafia Asghar, Abdul Hafeez

Abstract:

This research aims to determine the influence of Fibonacci numbers and golden ratio through textile designs. This study was carried out by collecting a variety of designs from different textile industries. Top textile designers were also interviewed regarding golden ratio and its application on their designs and design execution process. This study revealed that most of the designs fulfilled the golden ratio and the designs that were according to golden ratio were more favorite to the consumers.

Keywords: golden ratio, Fibonacci numbers, textile design, designs

Procedia PDF Downloads 683
2158 Study of Transport Phenomena in Photonic Crystals with Correlated Disorder

Authors: Samira Cherid, Samir Bentata, Feyza Zahira Meghoufel, Yamina Sefir, Sabria Terkhi, Fatima Bendahma, Bouabdellah Bouadjemi, Ali Zitouni

Abstract:

Using the transfer-matrix technique and the Kronig Penney model, we numerically and analytically investigate the effect of short-range correlated disorder in random dimer model (RDM) on transmission properties of light in one dimension photonic crystals made of three different materials. Such systems consist of two different structures randomly distributed along the growth direction, with the additional constraint that one kind of these layers appears in pairs. It is shown that the one-dimensional random dimer photonic crystals support two types of extended modes. By shifting of the dimer resonance toward the host fundamental stationary resonance state, we demonstrate the existence of the ballistic response in these systems.

Keywords: photonic crystals, disorder, correlation, transmission

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2157 The Effect of Lande G-Factors on the Quantum and Thermal Entanglement in the Mixed Spin-(1/2,S) Heisenberg Dimer

Authors: H. Vargova, J. Strecka, N. Tomasovicova

Abstract:

A rigorous analytical treatment, with the help of a concept of negativity, is used to study the quantum and thermal entanglement in an isotropic mixed spin-(1/2,S) Heisenberg dimer. The effect of the spin-S magnitude, as well as the effect of diversity between Landé g-factors of magnetic constituents on system entanglement, is exhaustively analyzed upon the variation of the external magnetic and electric field, respectively. It was identified that the increasing magnitude of the spin-S species in a mixed spin-(1/2,S) Heisenberg dimer with comparative Landé g-factors have always a reduction effect on a degree of the quantum entanglement, but it strikingly shifts the thermal entanglement to the higher temperatures. Surprisingly, out of the limit of identical Landé g-factors, the increasing magnitude of spin-S entities can enhance the system entanglement in both low and high magnetic fields. Besides this, we identify that the analyzed dimer with a high-enough magnitude of the spin-S entities at a sufficiently high magnetic field can exhibit unconventional thermally driven re-entrance between the entangled and unentangled mixed state. The importance of the electric-field stimuli is also discussed in detail.

Keywords: quantum and thermal entantanglement, mixed spin Heisenberg model, negativity, reentrant phase transition

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2156 Dynamical Systems and Fibonacci Numbers

Authors: Vandana N. Purav

Abstract:

The Dynamical systems concept is a mathematical formalization for any fixed rule that describes the time dependence of a points position in its ambient space. e.g. pendulum of a clock, the number of fish each spring in a lake, the number of rabbits spring in an enclosure, etc. The Dynamical system theory used to describe the complex nature that is dynamical systems with differential equations called continuous dynamical system or dynamical system with difference equations called discrete dynamical system. The concept of dynamical system has its origin in Newtonian mechanics.

Keywords: dynamical systems, Fibonacci numbers, Newtonian mechanics, discrete dynamical system

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2155 Secure Image Encryption via Enhanced Fractional Order Chaotic Map

Authors: Ismail Haddad, Djamel Herbadji, Aissa Belmeguenai, Selma Boumerdassi

Abstract:

in this paper, we provide a novel approach for image encryption that employs the Fibonacci matrix and an enhanced fractional order chaotic map. The enhanced map overcomes the drawbacks of the classical map, especially the limited chaotic range and non-uniform distribution of chaotic sequences, resulting in a larger encryption key space. As a result, this strategy improves the encryption system's security. Our experimental results demonstrate that our proposed algorithm effectively encrypts grayscale images with exceptional efficiency. Furthermore, our technique is resistant to a wide range of potential attacks, including statistical and entropy attacks.

Keywords: image encryption, logistic map, fibonacci matrix, grayscale images

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2154 Theoretical Investigation of the Origin of Interfacial Ferromagnetism of (LaNiO₃)n/(CaMnO₃)m Superlattices

Authors: Jiwuer Jilili, Iogann Tolbatov, Mousumi U. Kahaly

Abstract:

Metal to insulator transition and interfacial magnetism of the LaNiO₃ based superlattice are main interest due to thickness dependent electronic response and tunable magnetic behavior. We investigate the structural, electronic, and magnetic properties of recently experimentally synthesized (LaNiO₃)n/(CaMnO₃)m superlattices with varying LaNiO₃ thickness using density functional theory. The effect of the on-site Coulomb interaction is discussed. In switching from zero to finite U value for Ni atoms, LaNiO₃ shows transitions from half-metallic to metallic character, while spinning ordering changes from paramagnetic to ferromagnetic (FM). For CaMnO₃, U < 3 eV on Mn atoms results in G-type anti-FM spin ordering whereas increasing U value yields FM ordering. In superlattices, metal to insulator transition was achieved with a reduction of LaNiO₃ thickness. The system with one layer of LaNiO₃ yields insulating character. Increasing LaNiO₃ to two layers and above results in the onset of the metallic character with a major contribution from Ni and Mn 3d eg states. Our results for interfacial ferromagnetism, induced Ni magnetic moments and novel antiferromagnetically coupled Ni atoms are consistent with the recent experimental findings. The possible origin of the emergent magnetism is proposed in terms of the exchange interaction and Anderson localization.

Keywords: density functional theory, interfacial magnetism, metal-insulator transition, Ni magnetism.

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2153 Predicting the Adsorptive Capacities of Biosolid as a Barrier in Soil to Remove Industrial Contaminants

Authors: H. Aguedal, H. Hentit, A. Aziz, D. R. Merouani, A. Iddou

Abstract:

The major environmental risk of soil pollution is the contamination of groundwater by infiltration of organic and inorganic pollutants that can cause a serious pollution. To protect the groundwater, in this study, we proceeded to test the reliability of a bio solid as barrier to prevent the migration of a very dangerous pollutant ‘Cadmium’ through the different soil layers. The follow-up the influence of several parameters, such as: turbidity, pluviometry, initial concentration of cadmium and the nature of soil, allow us to find the most effective manner to integrate this barrier in the soil. From the results obtained, we noted the effective intervention of the barrier. Indeed, the recorded passing quantities are lowest for the highest rainfall; we noted that the barrier has a better affinity towards higher concentrations; the most retained amounts of cadmium has been in the top layer of the two types of soil, while the lowest amounts of cadmium are recorded in the inner layers of soils.

Keywords: adsorption of cadmium, barrier, groundwater pollution, protection

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2152 The Nonlinear Optical Properties Analysis of AlPc-Cl Organic Compound

Authors: M. Benhaliliba, A. Ben Ahmed, C.E. Benouis, A.Ayeshamariam

Abstract:

The properties of nonlinear optical NLOs are examined, and the results confirm the 2.19 eV HOMO-LUMO mismatch. In the Al-Pc cluster, certain functional bond lengths and bond angles have been observed. The Quantum chemical method (DFT and TD-DFT) and Vibrational spectra properties of AlPc are studied. X-ray pattern reveals the crystalline structure along with the (242) orientation of the AlPc organic thin layer. UV-Vis shows the frequency selective behavior of the device. The absorbance of such layer exhibits a high value within the UV range and two consecutive peaks within visible range. Spin coating is used to make an organic diode based on the Aluminium-phthalocynanine (AlPc-Cl) molecule. Under dark and light conditions, electrical characterization of Ag/AlPc/Si/Au is obtained. The diode's high rectifying capability (about 1x104) is subsequently discovered. While the height barrier is constant and saturation current is greatly reliant on light, the ideality factor of such a diode increases to 6.9 which confirms the non-ideality of such a device. The Cheung-Cheung technique is employed to further the investigation and gain additional data such as series resistance and barrier height.

Keywords: AlPc-Cl organic material, nonlinear optic, optical filter, diode

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2151 The Structural and Electrical Properties of Cadmium Implanted Silicon Diodes at Room Temperature

Authors: J. O. Bodunrin, S. J. Moloi

Abstract:

This study reports on the x-ray crystallography (XRD) structure of cadmium-implanted p-type silicon, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of unimplanted and cadmium-implanted silicon-based diodes. Cadmium was implanted at the energy of 160 KeV to the fluence of 10¹⁵ ion/cm². The results obtained indicate that the diodes were well fabricated, and the introduction of cadmium results in a change in behavior of the diodes from normal exponential to ohmic I-V behavior. The C-V measurements, on the other hand, show that the measured capacitance increased after cadmium doping due to the injected charge carriers. The doping density of the p-Si material and the device's Schottky barrier height was extracted, and the doping density of the undoped p-Si material increased after cadmium doping while the Schottky barrier height reduced. In general, the results obtained here are similar to those obtained on the diodes fabricated on radiation-hard material, indicating that cadmium is a promising metal dopant to improve the radiation hardness of silicon. Thus, this study would assist in adding possible options to improve the radiation hardness of silicon to be used in high energy physics experiments.

Keywords: cadmium, capacitance-voltage, current-voltage, high energy physics experiment, x-ray crystallography, XRD

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2150 Effect of Epoxy-ZrP Nanocomposite Top Coating on Inorganic Barrier Layer

Authors: Haesook Kim, Ha Na Ra, Mansu Kim, Hyun Gi Kim, Sung Soo Kim

Abstract:

Epoxy-ZrP (α-zirconium phosphate) nanocomposites were coated on inorganic barrier layer such as sputtering and atomic layer deposition (ALD) to improve the barrier properties and protect the layer. ZrP nanoplatelets were synthesized using a reflux method and exfoliated in the polymer matrix. The barrier properties of coating layer were characterized by measuring water vapor transmission rate (WVTR). The WVTR dramatically decreased after epoxy-ZrP nanocomposite coating, while maintaining the optical properties. It was also investigated the effect of epoxy-ZrP coating on inorganic layer after bending and reliability test. The optimal structure composed of inorganic and epoxy-ZrP nanocomposite layers was used in organic light emitting diodes (OLED) encapsulation.

Keywords: α-zirconium phosphate, barrier properties, epoxy nanocomposites, OLED encapsulation

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2149 Semiconductor Nanofilm Based Schottky-Barrier Solar Cells

Authors: Mariyappan Shanmugam, Bin Yu

Abstract:

Schottky-barrier solar cells are demonstrated employing 2D-layered MoS2 and WS2 semiconductor nanofilms as photo-active material candidates synthesized by chemical vapor deposition method. Large area MoS2 and WS2 nanofilms are stacked by layer transfer process to achieve thicker photo-active material studied by atomic force microscopy showing a thickness in the range of ~200 nm. Two major vibrational active modes associated with 2D-layered MoS2 and WS2 are studied by Raman spectroscopic technique to estimate the quality of the nanofilms. Schottky-barrier solar cells employed MoS2 and WS2 active materials exhibited photoconversion efficiency of 1.8 % and 1.7 % respectively. Fermi-level pinning at metal/semiconductor interface, electronic transport and possible recombination mechanisms are studied in the Schottky-barrier solar cells.

Keywords: two-dimensional nanosheet, graphene, hexagonal boron nitride, solar cell, Schottky barrier

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