Search results for: silicon quantum dots
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1089

Search results for: silicon quantum dots

909 The Structural and Electrical Properties of Cadmium Implanted Silicon Diodes at Room Temperature

Authors: J. O. Bodunrin, S. J. Moloi

Abstract:

This study reports on the x-ray crystallography (XRD) structure of cadmium-implanted p-type silicon, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of unimplanted and cadmium-implanted silicon-based diodes. Cadmium was implanted at the energy of 160 KeV to the fluence of 10¹⁵ ion/cm². The results obtained indicate that the diodes were well fabricated, and the introduction of cadmium results in a change in behavior of the diodes from normal exponential to ohmic I-V behavior. The C-V measurements, on the other hand, show that the measured capacitance increased after cadmium doping due to the injected charge carriers. The doping density of the p-Si material and the device's Schottky barrier height was extracted, and the doping density of the undoped p-Si material increased after cadmium doping while the Schottky barrier height reduced. In general, the results obtained here are similar to those obtained on the diodes fabricated on radiation-hard material, indicating that cadmium is a promising metal dopant to improve the radiation hardness of silicon. Thus, this study would assist in adding possible options to improve the radiation hardness of silicon to be used in high energy physics experiments.

Keywords: cadmium, capacitance-voltage, current-voltage, high energy physics experiment, x-ray crystallography, XRD

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908 Empowering a New Frontier in Heart Disease Detection: Unleashing Quantum Machine Learning

Authors: Sadia Nasrin Tisha, Mushfika Sharmin Rahman, Javier Orduz

Abstract:

Machine learning is applied in a variety of fields throughout the world. The healthcare sector has benefited enormously from it. One of the most effective approaches for predicting human heart diseases is to use machine learning applications to classify data and predict the outcome as a classification. However, with the rapid advancement of quantum technology, quantum computing has emerged as a potential game-changer for many applications. Quantum algorithms have the potential to execute substantially faster than their classical equivalents, which can lead to significant improvements in computational performance and efficiency. In this study, we applied quantum machine learning concepts to predict coronary heart diseases from text data. We experimented thrice with three different features; and three feature sets. The data set consisted of 100 data points. We pursue to do a comparative analysis of the two approaches, highlighting the potential benefits of quantum machine learning for predicting heart diseases.

Keywords: quantum machine learning, SVM, QSVM, matrix product state

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907 Low Trigger Voltage Silicon Controlled Rectifier Stacking Structure with High Holding Voltage for High Voltage Applications

Authors: Kyoung-Il Do, Jun-Geol Park, Hee-Guk Chae, Jeong-Yun Seo, Yong-Seo Koo

Abstract:

A SCR stacking structure is proposed to have improved Latch-up immunity. In comparison with conventional SCR (Silicon Controlled Rectifier), the proposed Electrostatic Discharge (ESD) protection circuit has a lower trigger characteristic by using the LVTSCR (Low Voltage Trigger) structure. Also the proposed ESD protection circuit has improved Holding Voltage Characteristic by using N-stack technique. These characteristics enable to have latch-up immunity in operating conditions. The simulations are accomplished by using the Synopsys TCAD. It has a trigger voltage of 8.9V and a holding voltage of 1.8V in a single structure. And when applying the stack technique, 2-stack has the holding voltage of 3.8V and 3-stack has the holding voltage of 5.1 V.

Keywords: electrostatic discharge (ESD), low voltage trigger silicon controlled rectifier (LVTSCR), MVTSCR, power clamp, silicon controlled rectifier (SCR), latch-up

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906 Influence of Boron and Germanium Doping on Physical-Mechanical Properties of Monocrystalline Silicon

Authors: Ia Kurashvili, Giorgi Darsavelidze, Giorgi Chubinidze, Marina Kadaria

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Boron-doped Czochralski (CZ) silicon of p-type, widely used in the photovoltaic industry is suffering from the light-induced-degradation (LID) of bulk electrophysical characteristics. This is caused by specific metastable B-O defects, which are characterized by strong recombination activity. In this regard, it is actual to suppress B-O defects in CZ silicon. One of the methods is doping of silicon by different isovalent elements (Ge, C, Sn). The present work deals with the investigations of the influence of germanium doping on the internal friction and shear modulus amplitude dependences in the temperature interval of 600-800⁰C and 0.5-5 Hz frequency range in boron-containing monocrystalline silicon. Experimental specimens were grown by Czochralski method (CZ) in [111] direction. Four different specimens were investigated: Si+0,5at%Ge:B (5.1015cm-3), Si+0,5at%Ge:B (1.1019cm-3), Si+2at%Ge:B (5.1015cm-3) and Si+2at%Ge:B (1.1019cm-3). Increasing tendency of dislocation density and inhomogeneous distribution in silicon crystals with high content of boron and germanium were revealed by metallographic studies on the optical microscope of NMM-80RF/TRF. Weak increase of current carriers-holes concentration and slight decrease of their mobility were observed by Van der Pauw method on Ecopia HMS-3000 device. Non-monotonous changes of dislocation origin defects mobility and microplastic deformation characteristics influenced by measuring temperatures and boron and germanium concentrations were revealed. Possible mechanisms of changes of mechanical characteristics in Si-Ge experimental specimens were discussed.

Keywords: dislocation, internal friction, microplastic deformation, shear modulus

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905 Navigating Cyber Attacks with Quantum Computing Leveraging Vulnerabilities and Forensics for Advanced Penetration Testing in Cybersecurity

Authors: Sayor Ajfar Aaron, Md. Mushfiqur Rahman, Sajjat Hossain Abir, Ashif Newaz

Abstract:

This paper examines the transformative potential of quantum computing in the field of cybersecurity, with a focus on advanced penetration testing and forensics. It explores how quantum technologies can be leveraged to identify and exploit vulnerabilities more efficiently than traditional methods and how they can enhance the forensic analysis of cyber-attacks. Through theoretical analysis and practical simulations, this study highlights the enhanced capabilities of quantum algorithms in detecting and responding to sophisticated cyber threats, providing a pathway for developing more resilient cybersecurity infrastructures.

Keywords: cybersecurity, cyber forensics, penetration testing, quantum computing

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904 Analysis of Network Performance Using Aspect of Quantum Cryptography

Authors: Nisarg A. Patel, Hiren B. Patel

Abstract:

Quantum cryptography is described as a point-to-point secure key generation technology that has emerged in recent times in providing absolute security. Researchers have started studying new innovative approaches to exploit the security of Quantum Key Distribution (QKD) for a large-scale communication system. A number of approaches and models for utilization of QKD for secure communication have been developed. The uncertainty principle in quantum mechanics created a new paradigm for QKD. One of the approaches for use of QKD involved network fashioned security. The main goal was point-to-point Quantum network that exploited QKD technology for end-to-end network security via high speed QKD. Other approaches and models equipped with QKD in network fashion are introduced in the literature as. A different approach that this paper deals with is using QKD in existing protocols, which are widely used on the Internet to enhance security with main objective of unconditional security. Our work is towards the analysis of the QKD in Mobile ad-hoc network (MANET).

Keywords: cryptography, networking, quantum, encryption and decryption

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903 An Anode Based on Modified Silicon Nanostructured for Lithium – Ion Battery Application

Authors: C. Yaddaden, M. Berouaken, L. Talbi, K. Ayouz, M. Ayat, A. Cheriet, F. Boudeffar, A. Manseri, N. Gabouze

Abstract:

Lithium-ion batteries (LIBs) are widely used in various electronic devices due to their high energy density. However, the performance of the anode material in LIBs is crucial for enhancing the battery's overall efficiency. This research focuses on developing a new anode material by modifying silicon nanostructures, specifically porous silicon nanowires (PSiNWs) and porous silicon nanoparticles (NPSiP), with silver nanoparticles (Ag) to improve the performance of LIBs. The aim of this research is to investigate the potential application of PSiNWs/Ag and NPSiP/Ag as anodes in LIBs and evaluate their performance in terms of specific capacity and Coulombic efficiency. The research methodology involves the preparation of PSiNWs and NPSiP using metal-assisted chemical etching and electrochemical etching techniques, respectively. The Ag nanoparticles are introduced onto the nanostructures through electrodissolution of the porous film and ultrasonic treatment. Galvanostatic charge/discharge measurements are conducted between 1 and 0.01 V to evaluate the specific capacity and Coulombic efficiency of both PSiNWs/Ag and NPSiP/Ag electrodes. The specific capacity of the PSiNWs/Ag electrode is approximately 1800 mA h g-1, with a Coulombic efficiency of 98.8% at the first charge/discharge cycle. On the other hand, the NPSiP/Ag electrode exhibits a specific capacity of 2600 mAh g-1. Both electrodes show a slight increase in capacity retention after 80 cycles, attributed to the high porosity and surface area of the nanostructures and the stabilization of the solid electrolyte interphase (SEI). This research highlights the potential of using modified silicon nanostructures as anodes for LIBs, which can pave the way for the development of more efficient lithium-ion batteries.

Keywords: porous silicon nanowires, silicon nanoparticles, lithium-ion batteries, galvanostatic charge/discharge

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902 Molecular Simulation Study on the Catalytic Role of Silicon-Doped Graphene in Carbon Dioxide Hydrogenation

Authors: Wilmer Esteban Vallejo Narváez, Serguei Fomine

Abstract:

The theoretical investigation of Si-doped graphene nanoflakes (NFs) was conducted to understand their catalytic impact on CO₂ reduction using molecular hydrogen at the Density Functional Theory (DFT) level. The introduction of silicon by substituting carbon induces defects in the NF structure, resulting in a polyradical ground state. This silicon defect significantly boosts reactivity towards substrates, making Si-doped graphene NFs more catalytically active in CO₂ reduction to formic acid compared to silicene. Notably, Si-doped graphene demonstrates a preference for formic acid over carbon monoxide, mirroring the behavior of silicene. Furthermore, investigations into formic acid-to-formaldehyde and formaldehyde-to-methanol conversions reveal instances where Si-doped graphene outperforms silicene in terms of efficacy. In the final reduction step, the methanol-to-methane reaction unfolds in four stages, with the rate-determining step involving hydrogen transfer from silicon to methyl. Notably, the activation energy for this step is lower in Si-doped graphene compared to silicene. Consequently, Si-doped graphene NFs emerge as superior catalysts with lower activation energies overall. Remarkably, throughout these catalytic processes, Si-doped graphene maintains environmental stability, further highlighting its enhanced catalytic activity without compromising graphene's inherent stability.

Keywords: silicon-doped graphene, CO₂ reduction, DFT, catalysis

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901 Quantum Dot – DNA Conjugates for Biological Applications

Authors: A. Banerjee, C. Grazon, B. Nadal, T. Pons, Y. Krishnan, B. Dubertret

Abstract:

Quantum Dots (QDs) have emerged as novel fluorescent probes for biomedical applications. The photophysical properties of QDs such as broad absorption, narrow emission spectrum, reduced blinking, and enhanced photostability make them advantageous over organic fluorophores. However, for some biological applications, QDs need to be first targeted to specific intracellular locations. It parallel, base pairing properties and biocompatibility of DNA has been extensively used for biosensing, targetting and intracellular delivery of numerous bioactive agents. The combination of the photophysical properties of QDs and targettability of DNA has yielded fluorescent, stable and targetable nanosensors. QD-DNA conjugates have used in drug delivery, siRNA, intracellular pH sensing and several other applications; and continue to be an active area of research. In this project, a novel method to synthesise QD-DNA conjugates and their applications in bioimaging are investigated. QDs are first solubilized in water using a thiol based amphiphilic co-polymer and, then conjugated to amine functionalized DNA using a heterobifunctional linker. The conjugates are purified by size exclusion chromatography and characterized by UV-Vis absorption and fluorescence spectroscopy, electrophoresis and microscopy. Parameters that influence the conjugation yield such as reducing agents, the excess of salt and pH have been investigated in detail. In optimized reaction conditions, up to 12 single-stranded DNA (15 mer length) can be conjugated per QD. After conjugation, the QDs retain their colloidal stability and high quantum yield; and the DNA is available for hybridization. The reaction has also been successfully tested on QDs emitting different colors and on Gold nanoparticles and therefore highly generalizable. After extensive characterization and robust synthesis of QD-DNA conjugates in vitro, the physical properties of these conjugates in cellular milieu are being invistigated. Modification of QD surface with DNA appears to remarkably alter the fate of QD inside cells and can have potential implications in therapeutic applications.

Keywords: bioimaging, cellular targeting, drug delivery, photostability

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900 Photoluminescence Study of Erbium-Mixed Alkylated Silicon Nanocrystals

Authors: Khamael M. Abualnaja, Lidija Šiller, Benjamin R. Horrocks

Abstract:

Alkylated silicon nanocrystals (C11-SiNCs) were prepared successfully by galvanostatic etching of p-Si(100) wafers followed by a thermal hydrosilation reaction of 1-undecene in refluxing toluene in order to extract C11-SiNCs from porous silicon. Erbium trichloride was added to alkylated SiNCs using a simple mixing chemical route. To the best of our knowledge, this is the first investigation on mixing SiNCs with erbium ions (III) by this chemical method. The chemical characterization of C11-SiNCs and their mixtures with Er3+ (Er/C11-SiNCs) were carried out using X-ray photoemission spectroscopy (XPS). The optical properties of C11-SiNCs and their mixtures with Er3+ were investigated using Raman spectroscopy and photoluminescence (PL). The erbium-mixed alkylated SiNCs shows an orange PL emission peak at around 595 nm that originates from radiative recombination of Si. Er/C11-SiNCs mixture also exhibits a weak PL emission peak at 1536 nm that originates from the intra-4f transition in erbium ions (Er3+). The PL peak of Si in Er/C11-SiNCs mixture is increased in the intensity up to three times as compared to pure C11-SiNCs. The collected data suggest that this chemical mixing route leads instead to a transfer of energy from erbium ions to alkylated SiNCs.

Keywords: photoluminescence, silicon nanocrystals, erbium, Raman spectroscopy

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899 Covariance and Quantum Cosmology: A Comparison of Two Matter Clocks

Authors: Theodore Halnon, Martin Bojowald

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In relativity, time is relative between reference frames. However, quantum mechanics requires a specific time coordinate in order to write an evolution equation for wave functions. This difference between the two theories leads to the problem of time in quantum gravity. One method to study quantum relativity is to interpret the dynamics of a matter field as a clock. In order to test the relationship between different reference frames, an isotropic cosmological model with two matter ingredients is introduced. One is given by a scalar field and one by vacuum energy or a cosmological constant. There are two matter fields, and thus two different Hamiltonians are derived from the respective clock rates. Semi-classical solutions are found for these equations and a comparison is made of the physical predictions that they imply.

Keywords: cosmology, deparameterization, general relativity, quantum mechanics

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898 A Dissolution Mechanism of the Silicon Carbide in HF/K₂Cr₂O₇ Solutions

Authors: Karima Bourenane, Aissa Keffous

Abstract:

In this paper, we present an experimental method on the etching reaction of p-type 6H-SiC, etching that was carried out in HF/K₂Cr₂O₇ solutions. The morphology of the etched surface was examined with varying K₂Cr₂O₇ concentrations, etching time and temperature solution. The surfaces of the etched samples were analyzed using Scanning electron microscopy (SEM), Fourier transform infrared spectroscopy (FT-IR) and Photoluminescence. The surface morphology of samples etched in HF/K₂Cr₂O₇ is shown to depend on the solution composition and bath temperature. The investigation of the HF/K₂Cr₂O₇ solutions on 6H-SiC surface shows that as K₂Cr₂O₇ concentration increases, the etch rate increases to reach a maximum value at about 0.75 M and then decreases. Similar behavior has been observed when the temperature of the solution is increased. The maximum etch rate is found for 80 °C. Taking into account the result, a polishing etching solution of 6H-SiC has been developed. In addition, the result is very interesting when, to date, no chemical polishing solution has been developed on silicon carbide (SiC). Finally, we have proposed a dissolution mechanism of the silicon carbide in HF/K₂Cr₂O₇ solutions.

Keywords: silicon carbide, dissolution, Chemical etching, mechanism

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897 Quantum Coherence Sets the Quantum Speed Limit for Mixed States

Authors: Debasis Mondal, Chandan Datta, S. K. Sazim

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Quantum coherence is a key resource like entanglement and discord in quantum information theory. Wigner- Yanase skew information, which was shown to be the quantum part of the uncertainty, has recently been projected as an observable measure of quantum coherence. On the other hand, the quantum speed limit has been established as an important notion for developing the ultra-speed quantum computer and communication channel. Here, we show that both of these quantities are related. Thus, cast coherence as a resource to control the speed of quantum communication. In this work, we address three basic and fundamental questions. There have been rigorous attempts to achieve more and tighter evolution time bounds and to generalize them for mixed states. However, we are yet to know (i) what is the ultimate limit of quantum speed? (ii) Can we measure this speed of quantum evolution in the interferometry by measuring a physically realizable quantity? Most of the bounds in the literature are either not measurable in the interference experiments or not tight enough. As a result, cannot be effectively used in the experiments on quantum metrology, quantum thermodynamics, and quantum communication and especially in Unruh effect detection et cetera, where a small fluctuation in a parameter is needed to be detected. Therefore, a search for the tightest yet experimentally realisable bound is a need of the hour. It will be much more interesting if one can relate various properties of the states or operations, such as coherence, asymmetry, dimension, quantum correlations et cetera and QSL. Although, these understandings may help us to control and manipulate the speed of communication, apart from the particular cases like the Josephson junction and multipartite scenario, there has been a little advancement in this direction. Therefore, the third question we ask: (iii) Can we relate such quantities with QSL? In this paper, we address these fundamental questions and show that quantum coherence or asymmetry plays an important role in setting the QSL. An important question in the study of quantum speed limit may be how it behaves under classical mixing and partial elimination of states. This is because this may help us to choose properly a state or evolution operator to control the speed limit. In this paper, we try to address this question and show that the product of the time bound of the evolution and the quantum part of the uncertainty in energy or quantum coherence or asymmetry of the state with respect to the evolution operator decreases under classical mixing and partial elimination of states.

Keywords: completely positive trace preserving maps, quantum coherence, quantum speed limit, Wigner-Yanase Skew information

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896 Effect of Silicon in Mitigating Cadmium Toxicity in Maize

Authors: Ghulam Hasan Abbasi, Moazzam Jamil, M. Anwar-Ul-Haq

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Heavy metals are significant pollutants in environment and their toxicity is a problem for survival of living things while Silicon (Si) is one of the most ubiquitous macroelements, performing an essential function in healing plants in response to environmental stresses. A hydroponic experiment was conducted to investigate the role of exogenous application of silicon under cadmium stress in six different maize hybrids with five treatments comprising of control, 7.5 µM Cd + 5 mM Si, 7.5 µM Cd + 10 mM Si, 15 µM Cd + 5 mM Si and 15 µM Cd + 10 mM Si. Results revealed that treatments of plants with 10mM Si application under both 7.5µM Cd and 15 µM Cd stress resulted in maximum improvement in plant morphological attributes (root and shoot length, root and shoot fresh and dry weight, leaf area and relative water contents) and antioxidant enzymes (POD and CAT) relative to 5 mM Si application in all maize hybrids. Results regarding Cd concentrations showed that Cd was more retained in roots followed by shoots and then leaves and maximum reduction in Cd uptake was observed at 10mM Si application. Maize hybrid 6525 showed maximum growth and least concentration of Cd whereas maize hybrid 1543 showed the minimum growth and maximum Cd concentration among all maize hybrids.

Keywords: antioxidant, cadmium, maize, silicon

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895 To Study the Effect of Optic Fibre Laser Cladding of Cast Iron with Silicon Carbide on Wear Rate

Authors: Kshitij Sawke, Pradnyavant Kamble, Shrikant Patil

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The study investigates the effect on wear rate of laser clad of cast iron with silicon carbide. Metal components fail their desired use because they wear, which causes them to lose their functionality. The laser has been used as a heating source to create a melt pool over the surface of cast iron, and then a layer of hard silicon carbide is deposited. Various combinations of power and feed rate of laser have experimented. A suitable range of laser processing parameters was identified. Wear resistance and wear rate properties were evaluated and the result showed that the wear resistance of the laser treated samples was exceptional to that of the untreated samples.

Keywords: laser clad, processing parameters, wear rate, wear resistance

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894 External Noise Distillation in Quantum Holography with Undetected Light

Authors: Sebastian Töpfer, Jorge Fuenzalida, Marta Gilaberte Basset, Juan P. Torres, Markus Gräfe

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This work presents an experimental and theoretical study about the noise resilience of quantum holography with undetected photons. Quantum imaging has become an important research topic in the recent years after its first publication in 2014. Following this research, advances towards different spectral ranges in detection and different optical geometries have been made. Especially an interest in the field of near infrared to mid infrared measurements has developed, because of the unique characteristic, that allows to sample a probe with photons in a different wavelength than the photons arriving at the detector. This promising effect can be used for medical applications, to measure in the so-called molecule fingerprint region, while using broadly available detectors for the visible spectral range. Further advance the development of quantum imaging methods have been made by new measurement and detection schemes. One of which is quantum holography with undetected light. It combines digital phase shifting holography with quantum imaging to extent the obtainable sample information, by measuring not only the object transmission, but also its influence on the phase shift experienced by the transmitted light. This work will present extended research for the quantum holography with undetected light scheme regarding the influence of external noise. It is shown experimentally and theoretically that the samples information can still be at noise levels of 250 times higher than the signal level, because of its information being transmitted by the interferometric pattern. A detailed theoretic explanation is also provided.

Keywords: distillation, quantum holography, quantum imaging, quantum metrology

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893 Influence of an External Magnetic Field on the Acoustomagnetoelectric Field in a Rectangular Quantum Wire with an Infinite Potential by Using a Quantum Kinetic Equation

Authors: N. Q. Bau, N. V. Nghia

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The acoustomagnetoelectric (AME) field in a rectangular quantum wire with an infinite potential (RQWIP) is calculated in the presence of an external magnetic field (EMF) by using the quantum kinetic equation for the distribution function of electrons system interacting with external phonons and electrons scattering with internal acoustic phonon in a RQWIP. We obtained ananalytic expression for the AME field in the RQWIP in the presence of the EMF. The dependence of AME field on the frequency of external acoustic wave, the temperature T of system, the cyclotron frequency of the EMF and the intensity of the EMF is obtained. Theoretical results for the AME field are numerically evaluated, plotted and discussed for a specific RQWIP GaAs/GaAsAl. This result has shown that the dependence of the AME field on intensity of the EMF is nonlinearly and it is many distinct maxima in the quantized magnetic region. We also compared received fields with those for normal bulk semiconductors, quantum well and quantum wire to show the difference. The influence of an EMF on AME field in a RQWIP is newly developed.

Keywords: rectangular quantum wire, acoustomagnetoelectric field, electron-phonon interaction, kinetic equation method

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892 Magneto-Transport of Single Molecular Transistor Using Anderson-Holstein-Caldeira-Leggett Model

Authors: Manasa Kalla, Narasimha Raju Chebrolu, Ashok Chatterjee

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We have studied the quantum transport properties of a single molecular transistor in the presence of an external magnetic field using the Keldysh Green function technique. We also used the Anderson-Holstein-Caldeira-Leggett Model to describe the single molecular transistor that consists of a molecular quantum dot (QD) coupled to two metallic leads and placed on a substrate that acts as a heat bath. The phonons are eliminated by the Lang-Firsov transformation and the effective Hamiltonian is used to study the effect of an external magnetic field on the spectral density function, Tunneling Current, Differential Conductance and Spin polarization. A peak in the spectral function corresponds to a possible excitation. In the presence of a magnetic field, the spin-up and spin-down states are degenerate and this degeneracy is lifted by the magnetic field leading to the splitting of the central peak of the spectral function. The tunneling current decreases with increasing magnetic field. We have observed that even the differential conductance peak in the zero magnetic field curve is split in the presence electron-phonon interaction. As the magnetic field is increased, each peak splits into two peaks. And each peak indicates the existence of an energy level. Thus the number of energy levels for transport in the bias window increases with the magnetic field. In the presence of the electron-phonon interaction, Differential Conductance in general gets reduced and decreases faster with the magnetic field. As magnetic field strength increases, the spin polarization of the current is increasing. Our results show that a strongly interacting QD coupled to metallic leads in the presence of external magnetic field parallel to the plane of QD acts as a spin filter at zero temperature.

Keywords: Anderson-Holstein model, Caldeira-Leggett model, spin-polarization, quantum dots

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891 Lanthanum Fluoride with Embedded Silicon Nanocrystals: A Novel Material for Future Electronic Devices

Authors: Golam Saklayen, Sheikh Rashel al Ahmed, Ferdous Rahman, Ismail Abu Bakar

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Investigation on Lanthanum Fluoride LaF3 layer embedding Silicon Nanocrystals (Si-NCs) fabricated using a novel one-step chemical method has been reported in this presentation. Application of this material has been tested for low-voltage operating non-volatile memory and Schottkey-junction solar cell. Colloidal solution of Si-NCs in hydrofluoric acid (HF) was prepared from meso-porous silicon by ultrasonic vibration (sonication). This solution prevents the Si-NCs to be oxidized. On a silicon (Si) substrate, LaCl3 solution in HCl is allowed to react with the colloidal solution of prepared Si-NCs. Since this solution contains HF, LaCl3 reacts with HF and produces LaF3 crystals that deposits on the silicon substrate as a layer embedding Si-NCs. This a novel single step chemical way of depositing LaF3 insulating layer embedding Si-NCs. The X-Ray diffraction of the deposited layer shows a polycrystalline LaF3 deposition on silicon. A non-stoichiometric LaF3 layer embedding Si-NCs was found by EDX analysis. The presence of Si-NCs was confirmed by SEM. FTIR spectroscopy of the deposited LaF3 powder also confirmed the presence of Si-NCs. The size of Si-NCs was found to be inversely proportional to the ultrasonic power. After depositing proper contacts on the back of Si and LaF3, the devices have been tested as a non-volatile memory and solar cell. A memory window of 525 mV was obtained at a programming and erasing bias of 2V. The LaF3 films with Si NCs showed strong absorption and was also found to decrease optical transmittance than pure LaF3 film of same thickness. The I-V characteristics of the films showed a dependency on the incident light intensity where current changed under various light illumination. Experimental results show a lot of promise for Si-NCs-embedded LaF3 layer to be used as an insulating layer in MIS devices as well as an photoactive material in Schottkey junction solar cells.

Keywords: silicon nanocrystals (Si NCs), LaF3, colloidal solution, Schottky junction solar cell

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890 Quantum Statistical Machine Learning and Quantum Time Series

Authors: Omar Alzeley, Sergey Utev

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Minimizing a constrained multivariate function is the fundamental of Machine learning, and these algorithms are at the core of data mining and data visualization techniques. The decision function that maps input points to output points is based on the result of optimization. This optimization is the central of learning theory. One approach to complex systems where the dynamics of the system is inferred by a statistical analysis of the fluctuations in time of some associated observable is time series analysis. The purpose of this paper is a mathematical transition from the autoregressive model of classical time series to the matrix formalization of quantum theory. Firstly, we have proposed a quantum time series model (QTS). Although Hamiltonian technique becomes an established tool to detect a deterministic chaos, other approaches emerge. The quantum probabilistic technique is used to motivate the construction of our QTS model. The QTS model resembles the quantum dynamic model which was applied to financial data. Secondly, various statistical methods, including machine learning algorithms such as the Kalman filter algorithm, are applied to estimate and analyses the unknown parameters of the model. Finally, simulation techniques such as Markov chain Monte Carlo have been used to support our investigations. The proposed model has been examined by using real and simulated data. We establish the relation between quantum statistical machine and quantum time series via random matrix theory. It is interesting to note that the primary focus of the application of QTS in the field of quantum chaos was to find a model that explain chaotic behaviour. Maybe this model will reveal another insight into quantum chaos.

Keywords: machine learning, simulation techniques, quantum probability, tensor product, time series

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889 Softener Washes Affecting the Shrinkage and Appearance of Knitted Garments

Authors: Ezza Nasir, Babar Ramzan

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Silicon washes on altered knitted fabrics will provide diverse shrinkage trends. The expectation on shrinkage for various apparel products are also changed. However, the effect of shrinkage in garment is still ambiguous. As a result, analysis of shrinkage after different concentrations of silicon washes can provide a more realistic study. The purpose of this study is to analyze the shrinkage with commercial sewing threads in knitted fabric. Study focuses on the effect of different washes on garment measurement and to study the effect of washes on fabric shrinkage. Four different types of knitted fabric were sewn with same length and width measurements. To study the effect of softener washes on shrinkage of garment through subjective ranking, there were critical dimensions for measurements done on body length and width garment appearance and shrinkage.

Keywords: shrinkage, dimensions, knitted fabric, silicon

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888 Quantum Mechanics Approach for Ruin Probability

Authors: Ahmet Kaya

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Incoming cash flows and outgoing claims play an important role to determine how is companies’ profit or loss. In this matter, ruin probability provides to describe vulnerability of the companies against ruin. Quantum mechanism is one of the significant approaches to model ruin probability as stochastically. Using the Hamiltonian method, we have performed formalisation of quantum mechanics < x|e-ᵗᴴ|x' > and obtained the transition probability of 2x2 and 3x3 matrix as traditional and eigenvector basis where A is a ruin operator and H|x' > is a Schroedinger equation. This operator A and Schroedinger equation are defined by a Hamiltonian matrix H. As a result, probability of not to be in ruin can be simulated and calculated as stochastically.

Keywords: ruin probability, quantum mechanics, Hamiltonian technique, operator approach

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887 A Novel Way to Create Qudit Quantum Error Correction Codes

Authors: Arun Moorthy

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Quantum computing promises to provide algorithmic speedups for a number of tasks; however, similar to classical computing, effective error-correcting codes are needed. Current quantum computers require costly equipment to control each particle, so having fewer particles to control is ideal. Although traditional quantum computers are built using qubits (2-level systems), qudits (more than 2-levels) are appealing since they can have an equivalent computational space using fewer particles, meaning fewer particles need to be controlled. Currently, qudit quantum error-correction codes are available for different level qudit systems; however, these codes have sometimes overly specific constraints. When building a qudit system, it is important for researchers to have access to many codes to satisfy their requirements. This project addresses two methods to increase the number of quantum error correcting codes available to researchers. The first method is generating new codes for a given set of parameters. The second method is generating new error-correction codes by using existing codes as a starting point to generate codes for another level (i.e., a 5-level system code on a 2-level system). So, this project builds a website that researchers can use to generate new error-correction codes or codes based on existing codes.

Keywords: qudit, error correction, quantum, qubit

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886 Modeling and Characterization of the SiC Single Crystal Growth Process

Authors: T. Wejrzanowski, M. Grybczuk, E. Tymicki, K. J. Kurzydlowski

Abstract:

In the present study numerical simulations silicon carbide single crystal growth process in Physical Vapor Transport reactor are addressed. Silicon Carbide is a perspective material for many applications in modern electronics. One of the main challenges for wider applications of SiC is high price of high quality mono crystals. Improvement of silicon carbide manufacturing process has a significant influence on the product price. Better understanding of crystal growth allows for optimization of the process, and it can be achieved by numerical simulations. In this work Virtual Reactor software was used to simulate the process. Predicted geometrical properties of the final product and information about phenomena occurring inside process reactor were obtained. The latter is especially valuable because reactor chamber is inaccessible during the process due to high temperature inside the reactor (over 2000˚C). Obtained data was used for improvement of the process and reactor geometry. Resultant crystal quality was also predicted basing on crystallization front shape evolution and threading dislocation paths. Obtained results were confronted with experimental data and the results are in good agreement.

Keywords: Finite Volume Method, semiconductors, Physical Vapor Transport, silicon carbide

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885 Studying the Effect of Silicon Substrate Intrinsic Carrier Concentration on Performance of ZnO/Si Solar Cells

Authors: Syed Sadique Anwer Askari, Mukul Kumar Das

Abstract:

Zinc Oxide (ZnO) solar cells have drawn great attention due to the enhanced efficiency and low-cost fabrication process. In this study, ZnO thin film is used as the active layer, hole blocking layer, antireflection coating (ARC) as well as transparent conductive oxide. To improve the conductivity of ZnO, top layer of ZnO is doped with aluminum, for top contact. Intrinsic carrier concentration of silicon substrate plays an important role in enhancing the power conversion efficiency (PCE) of ZnO/Si solar cell. With the increase of intrinsic carrier concentration PCE decreased due to increase in dark current in solar cell. At 80nm ZnO and 160µm Silicon substrate thickness, power conversion efficiency of 26.45% and 21.64% is achieved with intrinsic carrier concentration of 1x109/cm3, 1.4x1010/cm3 respectively.

Keywords: hetero-junction solar cell, solar cell, substrate intrinsic carrier concentration, ZnO/Si

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884 Assessment of Exploitation Vulnerability of Quantum Communication Systems with Phase Encryption

Authors: Vladimir V. Nikulin, Bekmurza H. Aitchanov, Olimzhon A. Baimuratov

Abstract:

Quantum communication technology takes advantage of the intrinsic properties of laser carriers, such as very high data rates and low power requirements, to offer unprecedented data security. Quantum processes at the physical layer of encryption are used for signal encryption with very competitive performance characteristics. The ultimate range of applications for QC systems spans from fiber-based to free-space links and from secure banking operations to mobile airborne and space-borne networking where they are subjected to channel distortions. Under practical conditions, the channel can alter the optical wave front characteristics, including its phase. In addition, phase noise of the communication source and photo-detection noises alter the signal to bring additional ambiguity into the measurement process. If quantized values of photons are used to encrypt the signal, exploitation of quantum communication links becomes extremely difficult. In this paper, we present the results of analysis and simulation studies of the effects of noise on phase estimation for quantum systems with different number of encryption bases and operating at different power levels.

Keywords: encryption, phase distortion, quantum communication, quantum noise

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883 Shock Compressibility of Iron Alloys Calculated in the Framework of Quantum-Statistical Models

Authors: Maxim A. Kadatskiy, Konstantin V. Khishchenko

Abstract:

Iron alloys are widespread components in various types of structural materials which are exposed to intensive thermal and mechanical loads. Various quantum-statistical cell models with the approximation of self-consistent field can be used for the prediction of the behavior of these materials under extreme conditions. The application of these models is even more valid, the higher the temperature and the density of matter. Results of Hugoniot calculation for iron alloys in the framework of three quantum-statistical (the Thomas–Fermi, the Thomas–Fermi with quantum and exchange corrections and the Hartree–Fock–Slater) models are presented. Results of quantum-statistical calculations are compared with results from other reliable models and available experimental data. It is revealed a good agreement between results of calculation and experimental data for terra pascal pressures. Advantages and disadvantages of this approach are shown.

Keywords: alloy, Hugoniot, iron, terapascal pressure

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882 Fluorescence Effect of Carbon Dots Modified with Silver Nanoparticles

Authors: Anna Piasek, Anna Szymkiewicz, Gabriela Wiktor, Jolanta Pulit-Prociak, Marcin Banach

Abstract:

Carbon dots (CDs) have great potential for application in many fields of science. They are characterized by fluorescent properties that can be manipulated. The nanomaterial has many advantages in addition to its unique properties. CDs may be obtained easily, and they undergo surface functionalization in a simple way. In addition, there is a wide range of raw materials that can be used for their synthesis. An interesting possibility is the use of numerous waste materials of natural origin. In the research presented here, the synthesis of CDs was carried out according to the principles of Green chemistry. Beet molasses was used as a natural raw material. It has a high sugar content. This makes it an excellent high-carbon precursor for obtaining CDs. To increase the fluorescence effect, we modified the surface of CDs with silver (Ag-CDs) nanoparticles. The process of obtaining CQD was based on the hydrothermal method by applying microwave radiation. Silver nanoparticles were formed via the chemical reduction method. The synthesis plans were performed on the Design of the Experimental method (DoE). Variable process parameters such as concentration of beet molasses, temperature and concentration of nanosilver were used in these syntheses. They affected the obtained properties and particle parameters. The Ag-CDs were analyzed by UV-vis spectroscopy. The fluorescence properties and selection of the appropriate excitation light wavelength were performed by spectrofluorimetry. Particle sizes were checked using the DLS method. The influence of the input parameters on the obtained results was also studied.

Keywords: fluorescence, modification, nanosilver, molasses, Green chemistry, carbon dots

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881 Many-Body Effect on Optical Gain of n+ Doping Tensile-Strained Ge/GeSiSn Quantum Wells

Authors: W. J. Fan, B. S. Ma

Abstract:

The many-body effect on band structure and optical gain of n+ doping tensile-strained Ge/GeSiSn quantum wells are investigated by using an 8-band k•p method. Phase diagram of Ge/GeSiSn quantum well is obtained. The E-k dispersion curves, band gap renormalization and optical gain spectra including many-body effect will be calculated and discussed. We find that the k.p method without many-body effect will overestimate the optical gain and transition energy.

Keywords: Si photonics, many-body effect, optical gain, Ge-on-Si, Quantum well

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880 Influence of Silicon Carbide Particle Size and Thermo-Mechanical Processing on Dimensional Stability of Al 2124SiC Nanocomposite

Authors: Mohamed M. Emara, Heba Ashraf

Abstract:

This study is to investigation the effect of silicon carbide (SiC) particle size and thermo-mechanical processing on dimensional stability of aluminum alloy 2124. Three combinations of SiC weight fractions are investigated, 2.5, 5, and 10 wt. % with different SiC particle sizes (25 μm, 5 μm, and 100nm) were produced using mechanical ball mill. The standard testing samples were fabricated using powder metallurgy technique. Both samples, prior and after extrusion, were heated from room temperature up to 400ºC in a dilatometer at different heating rates, that is, 10, 20, and 40ºC/min. The analysis showed that for all materials, there was an increase in length change as temperature increased and the temperature sensitivity of aluminum alloy decreased in the presence of both micro and nano-sized silicon carbide. For all conditions, nanocomposites showed better dimensional stability compared to conventional Al 2124/SiC composites. The after extrusion samples showed better thermal stability and less temperature sensitivity for the aluminum alloy for both micro and nano-sized silicon carbide.

Keywords: aluminum 2124 metal matrix composite, SiC nano-sized reinforcements, powder metallurgy, extrusion mechanical ball mill, dimensional stability

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