Search results for: porous silicon nanowires
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 1197

Search results for: porous silicon nanowires

1197 Humidity Sensing Behavior of Graphene Oxide on Porous Silicon Substrate

Authors: Amirhossein Hasani, Shamin Houshmand Sharifi

Abstract:

In this work, we investigate humidity sensing behavior of the graphene oxide with porous silicon substrate. By evaporation method, aluminum interdigital electrodes have been deposited onto porous silicon substrate. Then, by drop-casting method graphene oxide solution was deposited onto electrodes. The porous silicon was formed by electrochemical etching. The experimental results showed that using porous silicon substrate, we obtained two times larger sensitivity and response time compared with the results obtained with silicon substrate without porosity.

Keywords: graphene oxide, porous silicon, humidity sensor, electrochemical

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1196 Memristive Properties of Nanostructured Porous Silicon

Authors: Madina Alimova, Margulan Ibraimov, Ayan Tileu

Abstract:

The paper describes methods for obtaining porous structures with the properties of a silicon-based memristor and explains the electrical properties of porous silicon films. Based on the results, there is a positive shift in the current-voltage characteristics (CVC) after each measurement, i.e., electrical properties depend not only on the applied voltage but also on the previous state. After 3 minutes of rest, the film returns to its original state (reset). The method for obtaining a porous silicon nanofilm with the properties of a memristor is simple and does not require additional effort. Based on the measurement results, the typical memristive behavior of the porous silicon nanofilm is analyzed.

Keywords: porous silicon, current-voltage characteristics, memristor, nanofilms

Procedia PDF Downloads 99
1195 Silicon Surface Treatment Effect on the Structural, Optical, and Optoelectronic Properties for Solar Cell Applications

Authors: Lotfi Hedi Khezami, Mohamed Ben Rabha, N. Sboui, Mounir Gaidi, B. Bessais

Abstract:

Metal-nano particle-assisted Chemical Etching is an extraordinary developed wet etching method of producing uniform semiconductor nano structure (nano wires) from patterned metallic film on crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and opto electronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and opto electronic properties are presented in this paper.

Keywords: stain etching, porous silicon, silicon nanowires, reflectivity, lifetime, solar cells

Procedia PDF Downloads 412
1194 An Anode Based on Modified Silicon Nanostructured for Lithium – Ion Battery Application

Authors: C. Yaddaden, M. Berouaken, L. Talbi, K. Ayouz, M. Ayat, A. Cheriet, F. Boudeffar, A. Manseri, N. Gabouze

Abstract:

Lithium-ion batteries (LIBs) are widely used in various electronic devices due to their high energy density. However, the performance of the anode material in LIBs is crucial for enhancing the battery's overall efficiency. This research focuses on developing a new anode material by modifying silicon nanostructures, specifically porous silicon nanowires (PSiNWs) and porous silicon nanoparticles (NPSiP), with silver nanoparticles (Ag) to improve the performance of LIBs. The aim of this research is to investigate the potential application of PSiNWs/Ag and NPSiP/Ag as anodes in LIBs and evaluate their performance in terms of specific capacity and Coulombic efficiency. The research methodology involves the preparation of PSiNWs and NPSiP using metal-assisted chemical etching and electrochemical etching techniques, respectively. The Ag nanoparticles are introduced onto the nanostructures through electrodissolution of the porous film and ultrasonic treatment. Galvanostatic charge/discharge measurements are conducted between 1 and 0.01 V to evaluate the specific capacity and Coulombic efficiency of both PSiNWs/Ag and NPSiP/Ag electrodes. The specific capacity of the PSiNWs/Ag electrode is approximately 1800 mA h g-1, with a Coulombic efficiency of 98.8% at the first charge/discharge cycle. On the other hand, the NPSiP/Ag electrode exhibits a specific capacity of 2600 mAh g-1. Both electrodes show a slight increase in capacity retention after 80 cycles, attributed to the high porosity and surface area of the nanostructures and the stabilization of the solid electrolyte interphase (SEI). This research highlights the potential of using modified silicon nanostructures as anodes for LIBs, which can pave the way for the development of more efficient lithium-ion batteries.

Keywords: porous silicon nanowires, silicon nanoparticles, lithium-ion batteries, galvanostatic charge/discharge

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1193 Streptavidin-Biotin Attachment on Modified Silicon Nanowires

Authors: Shalini Singh, Sanjay K. Srivastava, Govind, Mukhtar. A. Khan, P. K. Singh

Abstract:

Nanotechnology is revolutionizing the development of biosensors. Nanomaterials and nanofabrication technologies are increasingly being used to design novel biosensors. Sensitivity and other attributes of biosensors can be improved by using nanomaterials with unique chemical, physical, and mechanical properties in their construction. Silicon is a promising biomaterial that is non-toxic and biodegradable and can be exploited in chemical and biological sensing. Present study demonstrated the streptavidin–biotin interaction on silicon surfaces with different topographies such as flat and nanostructured silicon (nanowires) surfaces. Silicon nanowires with wide range of surface to volume ratio were prepared by electrochemical etching of silicon wafer. The large specific surface of silicon nanowires can be chemically modified to link different molecular probes (DNA strands, enzymes, proteins and so on), which recognize the target analytes, in order to enhance the selectivity and specificity of the sensor device. The interaction of streptavidin with biotin was carried out on 3-aminopropyltriethoxysilane (APTS) functionalized silicon surfaces. Fourier Transform Infrared Spectroscopy (FTIR) and X-ray Photoelectron Spectroscopy (XPS) studies have been performed to characterize the surface characteristics to ensure the protein attachment. Silicon nanowires showed the enhance protein attachment, as compared to flat silicon surface due to its large surface area and good molecular penetration to its surface. The methodology developed herein could be generalized to a wide range of protein-ligand interactions, since it is relatively easy to conjugate biotin with diverse biomolecules such as antibodies, enzymes, peptides, and nucleotides.

Keywords: FTIR, silicon nanowires, streptavidin-biotin, XPS

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1192 Monocrystalline Silicon Surface Passivation by Porous Silicon

Authors: Mohamed Ben Rabha

Abstract:

In this paper, we report on the effect of porous silicon (PS) treatment on the surface passivation of monocrystalline silicon (c-Si). PS film with a thickness of 80 nm was deposited by stain etching. It was demonstrated that PS coating is a very interesting solution for surface passivation. The level of surface passivation is determined by techniques based on photoconductance and FTIR. As a results, the effective minority carrier lifetime increase from 2 µs to 7 µs at ∆n=1015 cm-3 and the reflectivity reduce from 28 % to about 7 % after PS coating.

Keywords: porous silicon, effective minority carrier lifetime, reflectivity

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1191 Fabrication and Characterization of Cadmium Sulfide Nanowires on Aluminum Oxide Template

Authors: Malik Imran Afzal

Abstract:

Cadmium supplied nanowires have unique electrical and optical properties and applications. To obtain cadmium supplied nanowires with regular and good aspect ratio, they can be synthesized by template synthesis method. Porous anodized aluminum oxide is the most promising template with regular hexagonal shapes. Their aspect ratio can be controlled by controlling the pores’ depth and diameter which greatly depend on anodization voltage and temperature of the electrolyte. In this research, high purity aluminium was used to prepare nanotemplates at 5-6°C in 1M phosphoric acid and cadmium supplied was deposited electrochemically using a co-solution of thiourea, cadmium acetate and ammonium acetate. pH was maintained at 11 in a heat bath at 75°C with the help of aqueous ammonia solution. Both porous anodized alumina and cadmium supplied nanowires were characterized suing SEM. A good quality Nanowires were obtained in bunches with reasonably high aspect ratio.

Keywords: bunches, electrodeposition, hexagonal, thiourea

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1190 Silicon Nanostructure Based on Metal-Nanoparticle-Assisted Chemical Etching for Photovoltaic Application

Authors: B. Bouktif, M. Gaidi, M. Benrabha

Abstract:

Metal-nano particle-assisted chemical etching is an extraordinary developed wet etching method of producing uniform semiconductor nanostructure (nanowires) from the patterned metallic film on the crystalline silicon surface. The metal films facilitate the etching in HF and H2O2 solution and produce silicon nanowires (SiNWs). Creation of different SiNWs morphologies by changing the etching time and its effects on optical and optoelectronic properties was investigated. Combination effect of formed SiNWs and stain etching treatment in acid (HF/HNO3/H2O) solution on the surface morphology of Si wafers as well as on the optical and optoelectronic properties are presented in this paper.

Keywords: semiconductor nanostructure, chemical etching, optoelectronic property, silicon surface

Procedia PDF Downloads 357
1189 Surface Passivation of Multicrystalline Silicon Solar Cell via Combination of LiBr/Porous Silicon and Grain Boundaies Grooving

Authors: Dimassi Wissem

Abstract:

In this work, we investigate the effect of combination between the porous silicon (PS) layer passivized with Lithium Bromide (LiBr) and grooving of grain boundaries (GB) in multi crystalline silicon. The grain boundaries were grooved in order to reduce the area of these highly recombining regions. Using optimized conditions, grooved GB's enable deep phosphorus diffusion and deep metallic contacts. We have evaluated the effects of LiBr on the surface properties of porous silicon on the performance of silicon solar cells. The results show a significant improvement of the internal quantum efficiency, which is strongly related to the photo-generated current. We have also shown a reduction of the surface recombination velocity and an improvement of the diffusion length after the LiBr process. As a result, the I–V characteristics under the dark and AM1.5 illumination were improved. It was also observed a reduction of the GB recombination velocity, which was deduced from light-beam-induced-current (LBIC) measurements. Such grooving in multi crystalline silicon enables passivization of GB-related defects. These results are discussed and compared to solar cells based on untreated multi crystalline silicon wafers.

Keywords: Multicrystalline silicon, LiBr, porous silicon, passivation

Procedia PDF Downloads 359
1188 Investigation of Mesoporous Silicon Carbonization Process

Authors: N. I. Kargin, G. K. Safaraliev, A. S. Gusev, A. O. Sultanov, N. V. Siglovaya, S. M. Ryndya, A. A. Timofeev

Abstract:

In this paper, an experimental and theoretical study of the processes of mesoporous silicon carbonization during the formation of buffer layers for the subsequent epitaxy of 3C-SiC films and related wide-band-gap semiconductors is performed. Experimental samples were obtained by the method of chemical vapor deposition and investigated by scanning electron microscopy. Analytic expressions were obtained for the effective diffusion factor and carbon atoms diffusion length in a porous system. The proposed model takes into account the processes of Knudsen diffusion, coagulation and overgrowing of pores during the formation of a silicon carbide layer.

Keywords: silicon carbide, porous silicon, carbonization, electrochemical etching, diffusion

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1187 Micropower Composite Nanomaterials Based on Porous Silicon for Renewable Energy Sources

Authors: Alexey P. Antropov, Alexander V. Ragutkin, Nicolay A. Yashtulov

Abstract:

The original controlled technology for power active nanocomposite membrane-electrode assembly engineering on the basis of porous silicon is presented. The functional nanocomposites were studied by electron microscopy and cyclic voltammetry methods. The application possibility of the obtained nanocomposites as high performance renewable energy sources for micro-power electronic devices is demonstrated.

Keywords: cyclic voltammetry, electron microscopy, nanotechnology, platinum-palladium nanocomposites, porous silicon, power activity, renewable energy sources

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1186 Facile Synthesis of Copper Based Nanowires Suitable for Lithium Ion Battery Application

Authors: Zeinab Sanaee, Hossein Jafaripour

Abstract:

Copper is an excellent conductive material that is widely used in the energy devices such as Lithium-ion batteries and supercapacitors as the current collector. On the other hand, copper oxide nanowires have been used in these applications as potential electrode material. In this paper, nanowires of Copper and Copper oxide have been synthesized through a simple and time and cost-effective approach. The thermally grown Copper oxide nanowires have been converted into Copper nanowires through annealing in the Hydrogen atmosphere in a DC-PECVD system. To have a proper Copper nanostructure formation, an Au nanolayer was coated on the surface of Copper oxide nanowires. The results show the successful achievement of Copper nanowires without deformation or cracking. These structures have a great potential for Lithium-ion batteries and supercapacitors.

Keywords: Copper, Copper oxide, nanowires, Hydrogen annealing, Lithium ion battery

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1185 Templating Copper on Polymer/DNA Hybrid Nanowires

Authors: Mahdi Almaky, Reda Hassanin, Benjamin Horrocks, Andrew Houlton

Abstract:

DNA-templated poly(N-substituted pyrrole)bipyridinium nanowires were synthesised at room temperature using the chemical oxidation method. The resulting CPs/DNA hybrids have been characterised using electronic and vibrational spectroscopic methods especially Ultraviolet-Visible (UV-Vis) spectroscopy and FTIR spectroscpy. The nanowires morphology was characterised using Atomic Force Microscopy (AFM). The electrical properties of the prepared nanowires were characterised using Electrostatic Force Microscopy (EFM), and measured using conductive AFM (c-AFM) and two terminal I/V technique, where the temperature dependence of the conductivity was probed. The conductivities of the prepared CPs/DNA nanowires are generally lower than PPy/DNA nanowires showingthe large effect on N-alkylation in decreasing the conductivity of the polymer, butthese are higher than the conductivity of their corresponding bulk films.This enhancement in conductivity could be attributed to the ordering of the polymer chains on DNA during the templating process. The prepared CPs/DNA nanowires were used as templates for the growth of copper nanowires at room temperature using aqueous solution of Cu(NO3)2as a source of Cu2+ and ascorbic acid as reducing agent. AFM images showed that these nanowires were uniform and continuous compared to copper nanowires prepared using the templating method directly onto DNA. Electrical characterization of the nanowires by c AFM revealed slight improvement in conductivity of these nanowires (Cu-CPs/DNA) compared to CPs/DNA nanowires before metallisation.

Keywords: templating, copper nanowires, polymer/DNA hybrid, chemical oxidation method

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1184 Dielectrophoretic Characterization of Tin Oxide Nanowires for Biotechnology Application

Authors: Ahmad Sabry Mohamad, Kai F. Hoettges, Michael Pycraft Hughes

Abstract:

This study investigates nanowires using Dielectrophoresis (DEP) in non-aqueous suspension of Tin (IV) Oxide (SnO2) nanoparticles dispersed in N,N-dimenthylformamide (DMF). The self assembly of nanowires in DEP impedance spectroscopy can be determined. In this work, dielectrophoretic method was used to measure non-organic molecules for estimating the permittivity and conductivity characteristic of the nanowires. As in aqueous such as salt solution has been dominating the transport of SnO2, which are the wire growth threshold, depend on applied voltage. While DEP assembly of nanowires depend on applied frequency, the applications of dielectrophoretic collection are measured using impedance spectroscopy.

Keywords: dielectrophoresis, impedance spectroscopy, nanowires, N, N-dimenthylformamide, SnO2

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1183 Zinc Oxide Nanowires: Device Fabrication and Optical Properties

Authors: Igori Wallace

Abstract:

Zinc oxide (ZnO) nanowires with hexagonal structure were successfully synthesized by the chemical bath deposition technique. The obtained nanowires were characterized by scanning electron microscope (SEM) and energy dispersive X-ray analysis (EDX). The SEM micrographs revealed the morphology of ZnO nanowires with the diameter between 170.3 and 481nm and showed that the normal pH of the bath solution, 8.1 is the optimized value to form ZnO nanowires with the hexagonal shape. The compositional (EDX) analysis revealed the elemental compositions of samples and confirmed the presence of Zn and O.

Keywords: crystallite, chemical bath deposition technique, hexagonal, morphology, nanowire

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1182 Preparation of Porous Metal Membrane by Thermal Annealing for Thin Film Encapsulation

Authors: Jaibir Sharma, Lee JaeWung, Merugu Srinivas, Navab Singh

Abstract:

This paper presents thermal annealing dewetting technique for the preparation of porous metal membrane for thin film encapsulation application. Thermal annealing dewetting experimental results reveal that pore size in porous metal membrane depend upon i.e. 1. The substrate on which metal is deposited for formation of porous metal cap membrane, 2. Melting point of metal used for porous metal cap layer membrane formation, 3. Thickness of metal used for cap layer, 4. Temperature used for porous metal membrane formation. Silver (Ag) was used as a metal for preparation of porous metal membrane by annealing the film at different temperature. Pores in porous silver film were analyzed using Scanning Electron Microscope (SEM). In order to check the usefulness of porous metal film for thin film encapsulation application, the porous silver film prepared on amorphous silicon (a-Si) was release using XeF2. Finally, guide line and structures are suggested to use this porous membrane for thin film encapsulation (TFE) application.

Keywords: dewetting, themal annealing, metal, melting point, porous

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1181 Investigation of Length Effect on Power Conversion Efficiency of Perovskite Solar Cells Composed of ZnO Nanowires

Authors: W. S. Li, S. T. Yang, H. C. Cheng

Abstract:

The power conversion efficiency (PCE) of the perovskite solar cells has been achieved by inserting vertically-aligned ZnO nanowires (NWs) between the cathode and the active layer and shows better solar cells performance. Perovskite solar cells have drawn significant attention due to the superb efficiency and low-cost fabrication process. In this experiment, ZnO nanowires are used as the electron transport layer (ETL) due to its low temperature process. The main idea of this thesis is utilizing the 3D structures of the hydrothermally-grown ZnO nanowires to increase the junction area to improve the photovoltaic performance of the perovskite solar cells. The infiltration and the surface coverage of the perovskite precursor solution changed as tuning the length of the ZnO nanowires. It is revealed that the devices with ZnO nanowires of 150 nm demonstrated the best PCE of 8.46 % under the AM 1.5G illumination (100 mW/cm2).

Keywords: hydrothermally-grown ZnO nanowires, perovskite solar cells, low temperature process, pinholes

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1180 Microstructure Characterization on Silicon Carbide Formation from Natural Wood

Authors: Noor Leha Abdul Rahman, Koay Mei Hyie, Anizah Kalam, Husna Elias, Teng Wang Dung

Abstract:

Dark Red Meranti and Kapur, kinds of important type of wood in Malaysia were used as a precursor to fabricate porous silicon carbide. A carbon template is produced by pyrolysis at 850°C in an oxygen free atmosphere. The carbon template then further subjected to infiltration with silicon by silicon melt infiltration method. The infiltration process was carried out in tube furnace in argon flow at 1500°C, at two different holding time; 2 hours and 3 hours. Thermo gravimetric analysis was done to investigate the decomposition behavior of two species of plants. The resulting silicon carbide was characterized by XRD which was found the formation of silicon carbide and also excess silicon. The microstructure was characterized by scanning electron microscope (SEM) and the density was determined by the Archimedes method. An increase in holding time during infiltration will increased the density as well as formation of silicon carbide. Dark Red Meranti precursor is likely suitable for production of silicon carbide compared to Kapur.

Keywords: density, SEM, silicon carbide, XRD

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1179 Impact of Silicon Surface Modification on the Catalytic Performance Towards CO₂ Conversion of Cu₂S/Si-Based Photocathodes

Authors: Karima Benfadel, Lamia Talbi, Sabiha Anas Boussaa, Afaf Brik, Assia Boukezzata, Yahia Ouadah, Samira Kaci

Abstract:

In order to prevent global warming, which is mainly caused by the increase in carbon dioxide levels in the atmosphere, it is interesting to produce renewable energy in the form of chemical energy by converting carbon dioxide into alternative fuels and other energy-dense products. Photoelectrochemical reduction of carbon dioxide to value-added products and fuels is a promising and current method. The objective of our study is to develop Cu₂S-based photoélectrodes, in which Cu₂S is used as a CO₂ photoelectrocatalyst deposited on nanostructured silicon substrates. Cu₂S thin layers were deposited using the chemical bath deposition (CBD) technique. Silicon nanowires and nanopyramids were obtained by alkaline etching. SEM and UV-visible spectroscopy was used to analyse the morphology and optical characteristics. By using a potentiostat station, we characterized the photoelectrochemical properties. We performed cyclic voltammetry in the presence and without CO₂ purging as well as linear voltammetry (LSV) in the dark and under white light irradiation. We perform chronoamperometry to study the stability of our photocathodes. The quality of the nanowires and nanopyramids was visible in the SEM images, and after Cu₂S deposition, we could see how the deposition was distributed over the textured surfaces. The inclusion of the Cu₂S layer applied on textured substrates significantly reduces the reflectance (R%). The catalytic performance towards CO₂ conversion of Cu₂S/Si-based photocathodes revealed that the texturing of the silicon surface with nanowires and pyramids has a better photoelectrochemical behavior than those without surface modifications.

Keywords: CO₂ conversion, Cu₂S photocathode, silicone nanostructured, electrochemistry

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1178 Highly Sensitive and Selective H2 Gas Sensor Based on Pd-Pt Decorated Nanostructured Silicon Carbide Thin Films for Extreme Environment Application

Authors: Satyendra Mourya, Jyoti Jaiswal, Gaurav Malik, Brijesh Kumar, Ramesh Chandra

Abstract:

Present work describes the fabrication and sensing characteristics of the Pd-Pt decorated nanostructured silicon carbide (SiC) thin films on anodized porous silicon (PSi) substrate by RF magnetron sputtering. The gas sensing performance of Pd-Pt/SiC/PSi sensing electrode towards H2 gas under low (10–400 ppm) detection limit and high operating temperature regime (25–600 °C) were studied in detail. The chemiresistive sensor exhibited high selectivity, good sensing response, fast response/recovery time with excellent stability towards H2 at high temperature. The selectivity measurement of the sensing electrode was done towards different oxidizing and reducing gases and proposed sensing mechanism discussed in detail. Therefore, the investigated Pd-Pt/SiC/PSi structure may be a highly sensitive and selective hydrogen gas sensing electrode for deployment in extreme environment applications.

Keywords: RF Sputtering, silicon carbide, porous silicon, hydrogen gas sensor

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1177 Optimizing the Field Emission Performance of SiNWs-Based Heterostructures: Controllable Synthesis, Core-Shell Structure, 3D ZnO/Si Nanotrees and Graphene/SiNWs

Authors: Shasha Lv, Zhengcao Li

Abstract:

Due to the CMOS compatibility, silicon-based field emission (FE) devices as potential electron sources have attracted much attention. The geometrical arrangement and dimensional features of aligned silicon nanowires (SiNWs) have a determining influence on the FE properties. We discuss a multistep template replication process of Ag-assisted chemical etching combined with polystyrene (PS) spheres to fabricate highly periodic and well-aligned silicon nanowires, then their diameter, aspect ratio and density were further controlled via dry oxidation and post chemical treatment. The FE properties related to proximity and aspect ratio were systematically studied. A remarkable improvement of FE propertiy was observed with the average nanowires tip interspace increasing from 80 to 820 nm. On the basis of adjusting SiNWs dimensions and morphology, addition of a secondary material whose properties complement the SiNWs could yield a combined characteristic. Three different nanoheterostructures were fabricated to control the FE performance, they are: NiSi/Si core-shell structures, ZnO/Si nanotrees, and Graphene/SiNWs. We successfully fabricated the high-quality NiSi/Si heterostructured nanowires with excellent conformality. First, nickle nanoparticles were deposited onto SiNWs, then rapid thermal annealing process were utilized to form NiSi shell. In addition, we demonstrate a new and simple method for creating 3D nanotree-like ZnO/Si nanocomposites with a spatially branched hierarchical structure. Compared with the as-prepared SiNRs and ZnO NWs, the high-density ZnO NWs on SiNRs have exhibited predominant FE characteristics, and the FE enhancement factors were attributed to band bending effect and geometrical morphology. The FE efficiency from flat sheet structure of graphene is low. We discussed an effective approach towards full control over the diameter of uniform SiNWs to adjust the protrusions of large-scale graphene sheet deposited on SiNWs. The FE performance regarding the uniformity and dimensional control of graphene protrusions supported on SiNWs was systematically clarified. Therefore, the hybrid SiNWs/graphene structures with protrusions provide a promising class of field emission cathodes.

Keywords: field emission, silicon nanowires, heterostructures, controllable synthesis

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1176 Numerical Study of Fluid Flow and Heat Transfer in the Spongy-Porous Media

Authors: Zeinab Sayed Abdel Rehim, M. A. Ziada, H. Salwa El-Deeb

Abstract:

Numerical study of fluid flow, heat transfer and thermal energy storing or released in/from spongy-porous media to predict the thermal performance and characteristics of the porous media as packed bed system is presented in this work. This system is cylindrical channel filled with porous media (carbon foam). The system consists of working fluid (air) and spongy-porous medium; they act as the heat exchanger (heating or cooling modes) where thermal interaction occurs between the working fluid and the porous medium. The spongy-porous media are defined by the different type of porous medium employed in the storing or cooling modes. Two different porous media are considered in this study: Carbon foam, and Silicon rubber. The flow of the working fluid (air) is one dimensional in the axial direction from the top to downward and steady state conditions. The numerical results of transient temperature distribution for both working fluid and the spongy-porous medium phases and the amount of stored/realized heat inside/from the porous medium for each case with respect to the operating parameters and the spongy-porous media characteristics are illustrated.

Keywords: fluid flow, heat transfer, numerical analysis, spongy-porous media, thermal performance, transient conditions

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1175 Solution Growth of Titanium Nitride Nanowires for Implantation Application

Authors: Roaa Sait, Richard Cross

Abstract:

The synthesis and characterization of one dimensional nanostructure such as nanowires has received considerable attention. Much effort has concentrated on TiN material especially in the biological field due to its useful and unique properties in this field. Therefore, for the purpose of this project, synthesis of Titanium Nitride (TiN) nanowires (NWs) will be presented. They will be synthesised by growing titanium dioxide (Ti) NWs in an aqueous solution at low temperatures under atmospheric pressure. Then the grown nanowires will undergo a 'Nitrodation process' in which results in the formation of TiN NWs. The structure, morphology and composition of the grown nanowires will be characterized using Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-ray Diffraction (XRD) and Cyclic Voltammetry (CV). Obtaining TiN NWs is a challenging task since it has not been formulated before, as far as we acknowledge. This might be due to the fact that nitriding Ti NWs can be difficult in terms of optimizing experimental parameters.

Keywords: nanowires, dissolution-growth, nucleation, PECVD, deposition, spin coating, scanning electron microscopic analysis, cyclic voltammetry analysis

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1174 Heat Transfer Process Parameter Optimization in SI/Ge Using TAGUCHI Method

Authors: Evln Ranga Charyulu, S. P. Venu Madhavarao, S. Udaya kumar, S. V. S. S. N. V. G. Krishna Murthy

Abstract:

With the advent of new nanometer process technologies, it is possible to integrate billion transistors on a single substrate. When more and more functionality included there is the possibility of multi-million transistors switching simultaneously consuming more power and dissipating more power along with more leakage of current into the substrate of porous silicon or germanium material. These results in substrate heating and thermal noise generation coupled to signals of interest. The heating process is represented by coupled nonlinear partial differential equations in porous silicon and germanium. By identifying heat sources and heat fluxes may results in designing of ultra-low power circuits. The PDEs are solved by finite difference scheme assuming that boundary layer equations in porous silicon and germanium. Local heat fluxes along the vertical isothermal surface immersed in porous SI/Ge are considered. The parameters considered for optimization are thermal diffusivity, thermal expansion coefficient, thermal diffusion ratio, permeability, specific heat at constant temperatures, Rayleigh number, amplitude of wavy surface, mass expansion coefficient. The diffusion of heat was caused by the concentration gradient. Thermal physical properties are homogeneous and isotropic. By using L8, TAGUCHI method the parameters are optimized.

Keywords: heat transfer, pde, taguchi optimization, SI/Ge

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1173 Investigation of Amorphous Silicon A-Si Thin Films Deposited on Silicon Substrate by Raman Spectroscopy

Authors: Amirouche Hammouda, Nacer Boucherou, Aicha Ziouche, Hayet Boudjellal

Abstract:

Silicon has excellent physical and electrical properties for optoelectronics industry. It is a promising material with many advantages. On Raman characterization of thin films deposited on crystalline silicon substrate, the signal Raman of amorphous silicon is often disturbed by the Raman signal of the crystalline silicon substrate. In this paper, we propose to characterize thin layers of amorphous silicon deposited on crystalline silicon substrates. The results obtained have shown the possibility to bring out the Raman spectrum of deposited layers by optimizing experimental parameters.

Keywords: raman scattering, amorphous silicon, crystalline silicon, thin films

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1172 Control of Oxide and Silicon Loss during Exposure of Silicon Waveguide

Authors: Gu Zhonghua

Abstract:

Control method of bulk silicon dioxide etching process to approach then expose silicon waveguide has been developed. It has been demonstrated by silicon waveguide of photonics devices. It is also able to generalize other applications. Use plasma dry etching to etch bulk silicon dioxide and approach oxide-silicon interface accurately, then use dilute HF wet etching to etch silicon dioxide residue layer to expose the silicon waveguide as soft landing. Plasma dry etch macro loading effect and endpoint technology was used to determine dry etch time accurately with a low wafer expose ratio.

Keywords: waveguide, etch, control, silicon loss

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1171 A Fast Chemiresistive H₂ Gas Sensor Based on Sputter Grown Nanocrystalline P-TiO₂ Thin Film Decorated with Catalytic Pd-Pt Layer on P-Si Substrate

Authors: Jyoti Jaiswal, Satyendra Mourya, Gaurav Malik, Ramesh Chandra

Abstract:

In the present work, we have fabricated and studied a resistive H₂ gas sensor based on Pd-Pt decorated room temperature sputter grown nanocrystalline porous titanium dioxide (p-TiO₂) thin film on porous silicon (p-Si) substrate for fast H₂ detection. The gas sensing performance of Pd-Pt/p-TiO₂/p-Si sensing electrode towards H₂ gas under low (10-500 ppm) detection limit and operating temperature regime (25-200 °C) was discussed. The sensor is highly sensitive even at room temperature, with response (Ra/Rg) reaching ~102 for 500 ppm H₂ in dry air and its capability of sensing H₂ concentrations as low as ~10 ppm was demonstrated. At elevated temperature of 200 ℃, the response reached more than ~103 for 500 ppm H₂. Overall the fabricated resistive gas sensor exhibited high selectivity, good sensing response, and fast response/recovery time with good stability towards H₂.

Keywords: sputtering, porous silicon (p-Si), TiO₂ thin film, hydrogen gas sensor

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1170 Electrospun Zinc Oxide Nanowires as Highly Sensitive Piezoelectric Transduction Elements for Nano-Scale Devices

Authors: K. Brince Paul, Nagendra Pratap Singh, Shiv Govind Singh, Siva Rama Krishna Vanjari

Abstract:

In this paper, we report optimized procedure for synthesizing highly oriented, horizontally aligned, Zinc oxide (ZnO) nanowires targeted towards developing highly sensitive piezoelectric transduction elements. The synthesis was carried out using Electrospinning technique, a facile, robust, low cost technique for producing nanowires. The as-synthesized ZnO nanowires were characterized by X-ray powder diffraction (XRD), Field Emission scanning electron microscopy (FESEM) and Energy-dispersive X-ray spectroscopy (EDX).The Piezoelectric behavior of these nanowires was characterized using Peizoelectric Force microscopy (PFM). A very high d33 coefficient of 23.1 pm/V obtained through the PFM measurements is an indicative of its potential application towards developing miniaturized piezoelectric transduction elements for nanoscale devices.

Keywords: electrospinning, piezoelectric, technique, zinc oxide

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1169 Bio-Electrochemical Process Coupled with MnO2 Nanowires for Wastewater Treatment

Authors: A. Giwa, S. M. Jung, W. Fang, J. Kong, S. W. Hasan

Abstract:

MnO2 nanowires were developed as filtration media for wastewater treatment that uniquely combines several advantages. The resulting material demonstrated strong capability to remove the pollution of heavy metal ions and organic contents in water. In addition, the manufacture process of such material is practical and economical. In this work, MnO2 nanowires were integrated with the state-of-art bio-electrochemical system for wastewater treatment, to overcome problems currently encountered with organic, inorganic, heavy metal, and microbe removal, and to minimize the unit footprint (land/space occupation) at low cost. Results showed that coupling the bio-electrochemical with MnO2 resulted in very encouraging results with higher removal efficiencies of such pollutants.

Keywords: bio-electrochemical, nanowires, novel, wastewater

Procedia PDF Downloads 350
1168 Synthesis of Low-Cost Porous Silicon Carbide Foams from Renewable Sources

Authors: M. A. Bayona, E. M. Cordoba, V. R. Guiza

Abstract:

Highly porous carbon-based foams are used in a wide range of industrial applications, which include absorption, catalyst supports, thermal insulation, and biomaterials, among others. Particularly, silicon carbide (SiC) based foams have shown exceptional potential for catalyst support applications, due to their chemical inertness, large frontal area, low resistance to flow, low-pressure drop, as well as high resistance to temperature and corrosion. These properties allow the use of SiC foams in harsh environments with high durability. Commonly, SiC foams are fabricated from polysiloxane, SiC powders and phenolic resins, which can be costly or highly toxic to the environment. In this work, we propose a low-cost method for the fabrication of highly porous, three-dimensional SiC foams via template replica, using recycled polymeric sponges as sacrificial templates. A sucrose-based resin combined with a Si-containing pre-ceramic polymer was used as the precursor. Polymeric templates were impregnated with the precursor solution, followed by thermal treatment at 1500 °C under an inert atmosphere. Several synthesis parameters, such as viscosity and composition of the precursor solution (Si: Sucrose molar ratio), and the porosity of the template, were evaluated in terms of their effect on the morphology, composition and mechanical resistance of the resulting SiC foams. The synthesized composite foams exhibited a highly porous (50-90%) and interconnected structure, containing 30-90% SiC with a mechanical compressive strength between 0.01-0.1 MPa. The methodology employed here allowed the fabrication of foams with a varied concentration of SiC and with morphological and mechanical properties that contribute to the development of materials of high relevance in the industry, while using low-cost, renewable sources such as table sugar, and providing a recycling alternative for polymeric sponges.

Keywords: catalyst support, polymer replica technique, reticulated porous ceramics, silicon carbide

Procedia PDF Downloads 98