Search results for: Planar Hall effect
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 14659

Search results for: Planar Hall effect

14659 Development of a Very High Sensitivity Magnetic Field Sensor Based on Planar Hall Effect

Authors: Arnab Roy, P. S. Anil Kumar

Abstract:

Hall bar magnetic field sensors based on planar hall effect were fabricated from permalloy (Ni¬80Fe20) thin films grown by pulsed laser ablation. As large as 400% planar Hall voltage change was observed for a magnetic field sweep within ±4 Oe, a value comparable with present day TMR sensors at room temperature. A very large planar Hall sensitivity of 1200 Ω/T was measured close to switching fields, which was not obtained so far apart from 2DEG Hall sensors. In summary, a highly sensitive low magnetic field sensor has been constructed which has the added advantage of simple architecture, good signal to noise ratio and robustness.

Keywords: planar hall effect, permalloy, NiFe, pulsed laser ablation, low magnetic field sensor, high sensitivity magnetic field sensor

Procedia PDF Downloads 487
14658 Complete Tripartite Graphs with Spanning Maximal Planar Subgraphs

Authors: Severino Gervacio, Velimor Almonte, Emmanuel Natalio

Abstract:

A simple graph is planar if it there is a way of drawing it in the plane without edge crossings. A planar graph which is not a proper spanning subgraph of another planar graph is a maximal planar graph. We prove that for complete tripartite graphs of order at most 9, the only ones that contain a spanning maximal planar subgraph are K1,1,1, K2,2,2, K2,3,3, and K3,3,3. The main result gives a necessary and sufficient condition for the complete tripartite graph Kx,y,z to contain a spanning maximal planar subgraph.

Keywords: complete tripartite graph, graph, maximal planar graph, planar graph, subgraph

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14657 Power Reduction of Hall-Effect Sensor by Pulse Width Modulation of Spinning-Current

Authors: Hyungil Chae

Abstract:

This work presents a method to reduce spinning current of a Hall-effect sensor for low-power magnetic sensor applications. Spinning current of a Hall-effect sensor changes the direction of bias current periodically and can separate signals from DC-offset. The bias current is proportional to the sensor sensitivity but also increases the power consumption. To achieve both high sensitivity and low power consumption, the bias current can be pulse-width modulated. When the bias current duration Tb is reduced by a factor of N compared to the spinning current period of Tₛ/2, the total power consumption can be saved by N times. N can be large as long as the Hall-effect sensor settles down within Tb. The proposed scheme is implemented and simulated in a 0.18um CMOS process, and the power saving factor is 9.6 when N is 10. Acknowledgements: This work was supported by Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (20160001360022003, Development of Hall Semi-conductor for Smart Car and Device).

Keywords: chopper stabilization, Hall-effect sensor, pulse width modulation, spinning current

Procedia PDF Downloads 446
14656 Reduction of Planar Transformer AC Resistance Using a Planar Litz Wire Structure

Authors: Hamed Belloumi, Aymen Ammouri, Ferid Kourda

Abstract:

A new trend in power converters is to design planar transformer that aim for low profile. However, at high frequency, the planar transformer ac losses become significant due to the proximity and skin effects. In this paper, the design and implementation of a novel planar litz conductor is presented in order to equalize the flux linkage and improving the current distribution. The developed PCB litz wire structure minimizes the losses in a similar way to the conventional multi stranded litz wires. In order to further illustrate the eddy current effect in different arrangements, a finite-element analysis (FEA) tool is used to analyze current distribution inside the conductors. Finally, the proposed planar transformer has been integrated in an electronic stage to test at high signal levels.

Keywords: planar transformer, finite-element analysis (FEA), winding losses, planar litz wire

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14655 Reduction of High-Frequency Planar Transformer Conduction Losses Using a Planar Litz Wire Structure

Authors: Hamed Belloumi, Amira Zouaoui, Ferid kourda

Abstract:

A new trend in power converters is to design planar transformer that aim for low profile. However, at high frequency, the planar transformer ac losses become significant due to the proximity and skin effects. In this paper, the design and implementation of a novel planar Litz conductor is presented in order to equalize the flux linkage and improving the current distribution. The developed PCB litz wire structure minimizes the losses in a similar way to the conventional multi stranded Litz wires. In order to further illustrate the eddy current effect in different arrangements, a Finite-Element Analysis (FEA) tool is used to analyze current distribution inside the conductors. Finally, the proposed planar transformer has been integrated in an electronic stage to test at high signal levels.

Keywords: planar transformer, finite-element analysis, winding losses, planar Litz wire

Procedia PDF Downloads 367
14654 Analysis of Vertical Hall Effect Device Using Current-Mode

Authors: Kim Jin Sup

Abstract:

This paper presents a vertical hall effect device using current-mode. Among different geometries that have been studied and simulated using COMSOL Multiphysics, optimized cross-shaped model displayed the best sensitivity. The cross-shaped model emerged as the optimum plate to fit the lowest noise and residual offset and the best sensitivity. The symmetrical cross-shaped hall plate is widely used because of its high sensitivity and immunity to alignment tolerances resulting from the fabrication process. The hall effect device has been designed using a 0.18-μm CMOS technology. The simulation uses the nominal bias current of 12μA. The applied magnetic field is from 0 mT to 20 mT. Simulation results achieved in COMSOL and validated with respect to the electrical behavior of equivalent circuit for Cadence. Simulation results of the one structure over the 13 available samples shows for the best geometry a current-mode sensitivity of 6.6 %/T at 20mT. Acknowledgment: This work was supported by Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (No. R7117-16-0165, Development of Hall Effect Semiconductor for Smart Car and Device).

Keywords: vertical hall device, current-mode, crossed-shaped model, CMOS technology

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14653 Exploring Spin Reorientation Transition and Berry Curvature Driven Anomalous Hall Effect in Quasi-2D vdW Ferromagnet Fe4GeTe2

Authors: Satyabrata Bera, Mintu Mondal

Abstract:

Two-dimensional (2D) ferromagnetic materials have garnered significant attention due to their potential to host intriguing scientific phenomena such as the anomalous Hall effect, anomalous Nernst effect, and high transport spin polarization. This study focuses on the investigation of air-stable van der Waals(vdW) ferromagnets, FeGeTe₂ (FₙGT with n = 3, 4, and 5). Particular emphasis is placed on the Fe4GeTe2 (F4GT) compound, which exhibits a complex and fascinating magnetic behavior characterized by two distinct transitions: (i) paramagnetic (PM) to ferromagnetic (FM) around T C ∼ 270 K, and (ii) another spins reorientation transition (SRT) at T SRT ∼ 100 K . Scaling analysis of magnetocaloric effect confirms the second-order character of the ferromagnetic transition, while the same analysis at T SRT suggests that SRT is first-order phase transition. Moreover, the F4GT exhibits a large anomalous Hall conductivity (AHC), ∼ 490 S/cm at 2 K . The near-quadratic behavior of the anomalous Hall resistivity with the longitudinal resistivity suggests that a dominant AHC contribution arises from an intrinsic Berry curvature (BC) mechanism. Electronic structure calculations reveal a significant BC resulting from SOC-induced gapped nodal lines around the Fermi level, thereby giving rise to large AHC. Additionally, we reported exceptionally large anomalous Hall angle (≃ 10.6%) and Hall factor (≃ 0.22 V −1 ) values, the largest observed within this vdW family. The findings presented here, provide valuable insights into the fascinating magnetic and transport properties of 2D ferromagnetic materials, in particular, FₙGT family.

Keywords: 2D vdW ferromagnet, spin reorientation transition, anomalous hall effect, berry curvature

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14652 Metal Layer Based Vertical Hall Device in a Complementary Metal Oxide Semiconductor Process

Authors: Se-Mi Lim, Won-Jae Jung, Jin-Sup Kim, Jun-Seok Park, Hyung-Il Chae

Abstract:

This paper presents a current-mode vertical hall device (VHD) structure using metal layers in a CMOS process. The proposed metal layer based vertical hall device (MLVHD) utilizes vertical connection among metal layers (from M1 to the top metal) to facilitate hall effect. The vertical metal structure unit flows a bias current Ibias from top to bottom, and an external magnetic field changes the current distribution by Lorentz force. The asymmetric current distribution can be detected by two differential-mode current outputs on each side at the bottom (M1), and each output sinks Ibias/2 ± Ihall. A single vertical metal structure generates only a small amount of hall effect of Ihall due to the short length from M1 to the top metal as well as the low conductivity of the metal, and a series connection between thousands of vertical structure units can solve the problem by providing NxIhall. The series connection between two units is another vertical metal structure flowing current in the opposite direction, and generates negative hall effect. To mitigate the negative hall effect from the series connection, the differential current outputs at the bottom (M1) from one unit merges on the top metal level of the other unit. The proposed MLVHD is simulated in a 3-dimensional model simulator in COMSOL Multiphysics, with 0.35 μm CMOS process parameters. The simulated MLVHD unit size is (W) 10 μm × (L) 6 μm × (D) 10 μm. In this paper, we use an MLVHD with 10 units; the overall hall device size is (W) 10 μm × (L)78 μm × (D) 10 μm. The COMSOL simulation result is as following: the maximum hall current is approximately 2 μA with a 12 μA bias current and 100mT magnetic field; This work was supported by Institute for Information & communications Technology Promotion(IITP) grant funded by the Korea government(MSIP) (No.R7117-16-0165, Development of Hall Effect Semiconductor for Smart Car and Device).

Keywords: CMOS, vertical hall device, current mode, COMSOL

Procedia PDF Downloads 270
14651 Electrical Properties of CVD-Graphene on SiC

Authors: Bilal Jabakhanji, Dimitris Kazazis, Adrien Michon, Christophe Consejo, Wilfried Desrat, Benoit Jouault

Abstract:

In this paper, we investigate the electrical properties of graphene grown by Chemical Vapor Deposition (CVD) on the Si face of SiC substrates. Depending on the growth condition, hole or electron doping can be achieved, down to a few 1011cm−2. The high homogeneity of the graphene and the low intrinsic carrier concentration, allow the remarkable observation of the Half Integer Quantum Hall Effect, typical of graphene, at the centimeter scale.

Keywords: graphene, quantum hall effect, chemical vapor, deposition, silicon carbide

Procedia PDF Downloads 630
14650 A CMOS-Integrated Hall Plate with High Sensitivity

Authors: Jin Sup Kim, Min Seo

Abstract:

An improved cross-shaped hall plate with high sensitivity is described in this paper. Among different geometries that have been simulated and measured using Helmholtz coil. The paper describes the physical hall plate design and implementation in a 0.18-µm CMOS technology. In this paper, the biasing is a constant voltage mode. In the voltage mode, magnetic field is converted into an output voltage. The output voltage is typically in the order of micro- to millivolt and therefore, it must be amplified before being transmitted to the outside world. The study, design and performance optimization of hall plate has been carried out with the COMSOL Multiphysics. It is used to estimate the voltage distribution in the hall plate with and without magnetic field and to optimize the geometry. The simulation uses the nominal bias current of 1mA. The applied magnetic field is in the range from 0 mT to 20 mT. Measured results of the one structure over the 10 available samples show for the best sensitivity of 2.5 %/T at 20mT.

Keywords: cross-shaped hall plate, sensitivity, CMOS technology, Helmholtz coil

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14649 Significance of Square Non-Spiral Microcoils for Biomedical Applications

Authors: Himanshu Chandrakar, Krishnapriya S., Rama Komaragiri, Suja K. J.

Abstract:

Micro coils are significant components for micro magnetic sensors and actuators especially in biomedical devices. Non-spiral planar microcoils of square, hexagonal and octagonal shapes are introduced for the first time in this paper. Comparison between different planar spiral and non-spiral coils are also discussed. The fabrication advantages and low power dissipation of non-spiral structures make them a strong alternative for conventional spiral planar coils. Series resistance of non-spiral coil is lesser than that of spiral coils though magnetic field is slightly lesser for non-spiral coils. Comparison of different planar microcoils shows that the proposed square non-spiral coil gives better performance than other structures.

Keywords: non-spiral planar microcoil, power dissipation, series resistance, spiral

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14648 Non-Universality in Barkhausen Noise Signatures of Thin Iron Films

Authors: Arnab Roy, P. S. Anil Kumar

Abstract:

We discuss angle dependent changes to the Barkhausen noise signatures of thin epitaxial Fe films upon altering the angle of the applied field. We observe a sub-critical to critical phase transition in the hysteresis loop of the sample upon increasing the out-of-plane component of the applied field. The observations are discussed in the light of simulations of a 2D Gaussian Random Field Ising Model with references to a reducible form of the Random Anisotropy Ising Model.

Keywords: Barkhausen noise, Planar Hall effect, Random Field Ising Model, Random Anisotropy Ising Model

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14647 Lookup Table Reduction and Its Error Analysis of Hall Sensor-Based Rotation Angle Measurement

Authors: Young-San Shin, Seongsoo Lee

Abstract:

Hall sensor is widely used to measure rotation angle. When the Hall voltage is measured for linear displacement, it is converted to angular displacement using arctangent function, which requires a large lookup table. In this paper, a lookup table reduction technique is presented for angle measurement. When the input of the lookup table is small within a certain threshold, the change of the outputs with respect to the change of the inputs is relatively small. Thus, several inputs can share same output, which significantly reduce the lookup table size. Its error analysis was also performed, and the threshold was determined so as to maintain the error less than 1°. When the Hall voltage has 11-bit resolution, the lookup table size is reduced from 1,024 samples to 279 samples.

Keywords: hall sensor, angle measurement, lookup table, arctangent

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14646 Numerical Response of Planar HPGe Detector for 241Am Contamination of Various Shapes

Authors: M. Manohari, Himanshu Gupta, S. Priyadharshini, R.Santhanam, S.Chandrasekaran, B|.Venkatraman

Abstract:

Injection is one of the potential routes of intake in a radioactive facility. The internal dose due to this intake is monitored at the radiation emergency medical centre, IGCAR using a portable planar HPGe detector. The contaminated wound may be having different shapes. In a reprocessing potential of wound contamination with actinide is more. Efficiency is one of the input parameters for estimation of internal dose. Estimating these efficiencies experimentally would be tedious and cumbersome. Numerical estimation can be a supplement to experiment. As an initial step in this study 241Am contamination of different shapes are studied. In this study portable planar HPGe detector was modeled using Monte Carlo code FLUKA and the effect of different parameters like distance of the contamination from the detector, radius of the circular contamination were studied. Efficiency values for point and surface contamination located at different distances were estimated. The effect of efficiency on the radius of the surface source was more predominant when the source is at 1 cm distance compared to when the source to detector distance is 10 cm. At 1 cm the efficiency decreased quadratically as the radius increased and at 10 cm it decreased linearly. The point source efficiency varied exponentially with source to detector distance.

Keywords: Planar HPGe, efficiency value, injection, surface source

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14645 Wall Shear Stress Under an Impinging Planar Jet Using the Razor Blade Technique

Authors: A. Ritcey, J. R. Mcdermid, S. Ziada

Abstract:

Wall shear stress was experimentally measured under a planar impinging air jet as a function of jet Reynolds number (Rejet = 5000, 8000, 11000) and different normalized impingement distances (H/D = 4, 6, 8, 10, 12) using the razor blade technique to complete a parametric study. The wall pressure, wall pressure gradient, and wall shear stress information were obtained.

Keywords: experimental fluid mechanics, impinging planar jets, skin friction factor, wall shear stress

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14644 Effect on Bandwidth of Using Double Substrates Based Metamaterial Planar Antenna

Authors: Smrity Dwivedi

Abstract:

The present paper has revealed the effect of double substrates over a bandwidth performance for planar antennas. The used material has its own importance to get minimum return loss and improved directivity. The author has taken double substrates to enhance the efficiency in terms of gain of antenna. Metamaterial based antenna has its own specific structure which increased the performance of antenna. Improved return loss is -20 dB, and the voltage standing wave ratio (VSWR) is 1.2, which is better than single substrate having return loss of -15 dB and VSWR of 1.4. Complete results are obtained using commercial software CST microwave studio.

Keywords: CST microwave studio, metamaterial, return loss, VSWR

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14643 A Novel Design in the Use of Planar Transformers for LDMOS Based Amplifiers in Bands II, III, DRM+, DVB-T and DAB+

Authors: Antonis Constantinides, Christos Yiallouras, Christakis Damianou

Abstract:

The coaxial transformer-coupled push-pull circuitry has been used widely in HF and VHF amplifiers for many decades without significant changes in the topology of the transformers. Basic changes over the years concerned the construction and turns ratio of the transformers as has been imposed upon the newer technologies active devices demands. The balun transmission line transformers applied in push-pull amplifiers enable input/output impedance transformation, but are mainly used to convert the balanced output into unbalanced and the input unbalanced into balanced. A simple and affordable alternative solution over the traditional coaxial transformer is the coreless planar balun. A key advantage over the traditional approach lies in the high specifications repeatability; simplifying the amplifier construction requirements as the planar balun constitutes an integrated part of the PCB copper layout. This paper presents the performance analysis of a planar LDMOS MRFE6VP5600 Push-Pull amplifier that enables robust operation in Band III, DVB-T, DVB-T2 standards but functions equally well in Band II, for DRM+ new generation transmitters.

Keywords: amplifier, balun, complex impedance, LDMOS, planar-transformers

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14642 Numerical Study on the Ultimate Load of Offshore Two-Planar Tubular KK-Joints at Fire-Induced Elevated Temperatures

Authors: Hamid Ahmadi, Neda Azari-Dodaran

Abstract:

A total of 270 nonlinear steady-state finite element (FE) analyses were performed on 54 FE models of two-planar circular hollow section (CHS) KK-joints subjected to axial loading at five different temperatures (20 ºC, 200 ºC, 400 ºC, 550 ºC, and 700 ºC). The primary goal was to investigate the effects of temperature and geometrical characteristics on the ultimate strength, modes of failure, and initial stiffness of the KK-joints. Results indicated that on an average basis, the ultimate load of a two-planar tubular KK-joint at 200 ºC, 400 ºC, 550 ºC, and 700 ºC is 90%, 75%, 45%, and 16% of the joint’s ultimate load at ambient temperature, respectively. Outcomes of the parametric study showed that replacing the yield stress at ambient temperature with the corresponding value at elevated temperature to apply the EN 1993-1-8 equations for the calculation of the joint’s ultimate load at elevated temperatures may lead to highly unconservative results that might endanger the safety of the structure. Results of the parametric study were then used to develop a set of design formulas, through nonlinear regression analyses, to calculate the ultimate load of two-planar tubular KK-joints subjected to axial loading at elevated temperatures.

Keywords: ultimate load, two-planar tubular KK-joint, axial loading, elevated temperature, parametric equation

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14641 Hall Coefficient in the Presence of Strong Electromagnetic Waves Caused by Confined Electrons and Phonons in a Rectangular Quantum Wire

Authors: Nguyen Quang Bau, Nguyen Thu Huong, Dang Thi Thanh Thuy

Abstract:

The analytic expression for the Hall Coefficient (HC) caused by the confined electrons in the presence of a strong electromagnetic wave (EMW) including the effect of phonon confinement in rectangular quantum wires (RQWs) is calculated by using the quantum kinetic equation for electrons in the case of electron - optical phonon scattering. It is because the expression of the HC for the confined phonon case contains indexes m, m’ which are specific to the phonon confinement. The expression in a RQW is different from that for the case of unconfined phonons in a RQW or in 2D. The results are numerically calculated and discussed for a GaAs/GaAsAl RQW. The numerical results show that HC in a RQW can have both negative and positive values. This is different from the case of the absence of EMW and the case presence of EMW including the effect of phonon unconfinement in a RQW. These results are also compared with those in the case of unconfined phonons in a RQW and confined phonons in a quantum well. The conductivity in the case of confined phonon has more resonance peaks compared with that in case of unconfined phonons in a RQW. This new property is the same in quantum well. All results are compared with the case of unconfined phonons to see differences.

Keywords: Hall coefficient, rectangular quantum wires, electron-optical phonon interaction, quantum kinetic equation, confined phonons

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14640 Bulk Transport in Strongly Correlated Topological Insulator Samarium Hexaboride Using Hall Effect and Inverted Resistance Methods

Authors: Alexa Rakoski, Yun Suk Eo, Cagliyan Kurdak, Priscila F. S. Rosa, Zachary Fisk, Monica Ciomaga Hatnean, Geetha Balakrishnan, Boyoun Kang, Myungsuk Song, Byungki Cho

Abstract:

Samarium hexaboride (SmB6) is a strongly correlated mixed valence material and Kondo insulator. In the resistance-temperature curve, SmB6 exhibits activated behavior from 4-40 K after the Kondo gap forms. However, below 4 K, the resistivity is temperature independent or weakly temperature dependent due to the appearance of a topologically protected surface state. Current research suggests that the surface of SmB6 is conductive while the bulk is truly insulating, different from conventional 3D TIs (Topological Insulators) like Bi₂Se₃ which are plagued by bulk conduction due to impurities. To better understand why the bulk of SmB6 is so different from conventional TIs, this study employed a new method, called inverted resistance, to explore the lowest temperatures, as well as standard Hall measurements for the rest of the temperature range. In the inverted resistance method, current flows from an inner contact to an outer ring, and voltage is measured outside of this outer ring. This geometry confines the surface current and allows for measurement of the bulk resistivity even when the conductive surface dominates transport (below 4 K). The results confirm that the bulk of SmB6 is truly insulating down to 2 K. Hall measurements on a number of samples show consistent bulk behavior from 4-40 K, but widely varying behavior among samples above 40 K. This is attributed to a combination of the growth process and purity of the starting material, and the relationship between the high and low temperature behaviors is still being explored.

Keywords: bulk transport, Hall effect, inverted resistance, Kondo insulator, samarium hexaboride, topological insulator

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14639 Resistive Instability in a Multi Ions Hall Thrusters Plasma

Authors: Sukhmander Singh

Abstract:

Hall thrusters are preferred over chemical thrusters because of its high exhaust velocity (around 10 times higher) and high specific impulse. The propellant Xenon is ionized inside the channel and controlled by the magnetic field. The strength of the magnetic field is such that only electrons get magnetized and ions remain unmagnetized because of larger Larmor radius as compared with the length of the channel of the device. There is quite a possibility of the existence of multi ions in a Hall thruster plasma because of dust contribution or another process which take place in the chamber. In this paper, we have derived the dispersion relation for multi ions resistive instability in a hall plasma. The analytical approach is also used to find out the propagating speed and the growth rate of the instability. In addition, some growing waves are also found to exist in the plasma. The dispersion relation is solved numerically to see the behavior of the instability with the plasma parameters viz, the temperature of plasma species, wave number, drift velocity, collision frequency, magnetic field.

Keywords: instability, resisitive, thrusters, waves

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14638 Equivalent Circuit Modelling of Active Reflectarray Antenna

Authors: M. Y. Ismail, M. Inam

Abstract:

This paper presents equivalent circuit modeling of active planar reflectors which can be used for the detailed analysis and characterization of reflector performance in terms of lumped components. Equivalent circuit representation has been proposed for PIN diodes and liquid crystal based active planar reflectors designed within X-band frequency range. A very close agreement has been demonstrated between equivalent circuit results, 3D EM simulated results as well as measured scattering parameter results. In the case of measured results, a maximum discrepancy of 1.05dB was observed in the reflection loss performance, which can be attributed to the losses occurred during measurement process.

Keywords: Equivalent circuit modelling, planar reflectors, reflectarray antenna, PIN diode, liquid crystal

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14637 Forced Vibration of a Planar Curved Beam on Pasternak Foundation

Authors: Akif Kutlu, Merve Ermis, Nihal Eratlı, Mehmet H. Omurtag

Abstract:

The objective of this study is to investigate the forced vibration analysis of a planar curved beam lying on elastic foundation by using the mixed finite element method. The finite element formulation is based on the Timoshenko beam theory. In order to solve the problems in frequency domain, the element matrices of two nodded curvilinear elements are transformed into Laplace space. The results are transformed back to the time domain by the well-known numerical Modified Durbin’s transformation algorithm. First, the presented finite element formulation is verified through the forced vibration analysis of a planar curved Timoshenko beam resting on Winkler foundation and the finite element results are compared with the results available in the literature. Then, the forced vibration analysis of a planar curved beam resting on Winkler-Pasternak foundation is conducted.

Keywords: curved beam, dynamic analysis, elastic foundation, finite element method

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14636 Skew Planar Wheel Antenna for First Person View of Unmanned Aerial Vehicle

Authors: Raymond Yudhi Purba, Levy Olivia Nur, Radial Anwar

Abstract:

This research presents the design and measurement of a skew planar wheel antenna that is used to visualize the first person view perspective of unmanned aerial vehicles. The antenna has been designed using CST Studio Suite 2019 to have voltage standing wave ratio (VSWR) ≤ 2, return loss ≤ -10 dB, bandwidth ≥ 100 MHz to covering outdoor access point band from 5.725 to 5.825 GHz, omnidirectional radiation pattern, and elliptical polarization. Dimensions of skew planar wheel antenna have been modified using parameter sweep technique to provide good performances. The simulation results provide VSWR 1.231, return loss -19.693 dB, bandwidth 828.8 MHz, gain 3.292 dB, and axial ratio 9.229 dB. Meanwhile, the measurement results provide VSWR 1.237, return loss -19.476 dB, bandwidth 790.5 MHz, gain 3.2034 dB, and axial ratio 4.12 dB.

Keywords: skew planar wheel, cloverleaf, first-person view, unmanned aerial vehicle, parameter sweep

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14635 Design Optimization of a Micro Compressor for Micro Gas Turbine Using Computational Fluid Dynamics

Authors: Kamran Siddique, Hiroyuki Asada, Yoshifumi Ogami

Abstract:

The use of Micro Gas Turbine (MGT) as the engine in Unmanned Aerobic Vehicles (UAVs) and power source in Robotics is widespread these days. Research has been conducted in the past decade or so to improve the performance of different components of MGT. This type of engine has interrelated components which have non-linear characteristics. Therefore, the overall engine performance depends on the individual engine element’s performance. Computational Fluid Dynamics (CFD) is one of the simulation method tools used to analyze or even optimize MGT system performance. In this study, the compressor of the MGT is designed, and performance optimization is being done using CFD. Performance of the micro compressor is improved in order to increase the overall performance of MGT. A high value of pressure ratio is to be achieved by studying the effect of change of different operating parameters like mass flow rate and revolutions per minute (RPM) and aerodynamical and geometrical parameters on the pressure ratio of the compressor. Two types of compressor designs are considered in this study; 3D centrifugal and ‘planar’ designs. For a 10 mm impeller, the planar model is the simplest compressor model with the ease in manufacturability. On the other hand, 3D centrifugal model, although more efficient, is very difficult to manufacture using current microfabrication resources. Therefore, the planar model is the best-suited model for a micro compressor. So. a planar micro compressor has been designed that has a good pressure ratio, and it is easy to manufacture using current microfabrication technologies. Future work is to fabricate the compressor to get experimental results and validate the theoretical model.

Keywords: computational fluid dynamics, microfabrication, MEMS, unmanned aerobic vehicles

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14634 Study and Evaluation of Occupational Health and Safety in Power Plant in Pakistan

Authors: Saira Iqbal

Abstract:

Occupational Health and Safety issues nowadays have become an important esteem in the context of Industrial Production. This study is designed to measure the workplace hazards at Kohinoor Energy Limited. Mainly focused hazards were Heat Stress, Noise Level, Light Level and Ergonomics. Measurements for parameters like Wet, Dry, Globe, WBGTi and RH% were taken directly by visiting the Study Area. The temperature in Degrees was recoded at Control Room and Engine Hall. Highest Temperature was recoded in Engine Hall which was about 380C. Efforts were made to record emissions of Noise Levels from the main area of concern like Engines in Engine hall, parking area, and mechanical workshop. Permissible level for measuring Noise is 85 and its Unit of Measurement is dB (A). In Engine Hall Noise was very high which was about 109.6 dB (A) and that level was exceeding the limits. Illumination Level was also recorded at different areas of Power Plant. The light level was though under permissible limits but in some areas like Engine Hall and Boiler Room, level of light was very low especially in Engine Hall where the level was 29 lx. Practices were performed for measuring hazards in context of ergonomics like extended reaching, deviated body postures, mechanical stress, and vibration exposures of the worker at different units of plants by just observing workers during working hours. Since KEL is ISO 8000 and 14000 certified, the researcher found no serious problems in the parameter Ergonomics however it was a common scenario that workers were reluctant to apply PPEs.

Keywords: workplace hazards, heat hazard, noise hazard, illumination, ergonomics

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14633 Equivalent Electrical Model of a Shielded Pulse Planar Transformer in Isolated Gate Drivers for SiC MOSFETs

Authors: Loreine Makki, Marc Anthony Mannah, Christophe Batard, Nicolas Ginot, Julien Weckbrodt

Abstract:

Planar transformers are extensively utilized in high-frequency, high power density power electronic converters. The breakthrough of wide-bandgap technology compelled power electronic system miniaturization while inducing pivotal effects on system modeling and manufacturing within the power electronics industry. A significant consideration to simulate and model the unanticipated parasitic parameters emerges with the requirement to mitigate electromagnetic disturbances. This paper will present an equivalent circuit model of a shielded pulse planar transformer quantifying leakage inductance and resistance in addition to the interwinding capacitance of the primary and secondary windings. ANSYS Q3D Extractor was utilized to model and simulate the transformer, intending to study the immunity of the simulated equivalent model to high dv/dt occurrences. A convenient correlation between simulation and experimental results is presented.

Keywords: Planar transformers, wide-band gap, equivalent circuit model, shielded, ANSYS Q3D Extractor, dv/dt

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14632 Flow over an Exponentially Stretching Sheet with Hall and Cross-Diffusion Effects

Authors: Srinivasacharya Darbhasayanam, Jagadeeshwar Pashikanti

Abstract:

This paper analyzes the Soret and Dufour effects on mixed convection flow, heat and mass transfer from an exponentially stretching surface in a viscous fluid with Hall Effect. The governing partial differential equations are transformed into ordinary differential equations using similarity transformations. The nonlinear coupled ordinary differential equations are reduced to a system of linear differential equations using the successive linearization method and then solved the resulting linear system using the Chebyshev pseudo spectral method. The numerical results for the velocity components, temperature and concentration are presented graphically. The obtained results are compared with the previously published results, and are found to be in excellent agreement. It is observed from the present analysis that the primary and secondary velocities and concentration are found to be increasing, and temperature is decreasing with the increase in the values of the Soret parameter. An increase in the Dufour parameter increases both the primary and secondary velocities and temperature and decreases the concentration.

Keywords: Exponentially stretching sheet, Hall current, Heat and Mass transfer, Soret and Dufour Effects

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14631 Growth of Non-Polar a-Plane AlGaN Epilayer with High Crystalline Quality and Smooth Surface Morphology

Authors: Abbas Nasir, Xiong Zhang, Sohail Ahmad, Yiping Cui

Abstract:

Non-polar a-plane AlGaN epilayers of high structural quality have been grown on r-sapphire substrate by using metalorganic chemical vapor deposition (MOCVD). A graded non-polar AlGaN buffer layer with variable aluminium concentration was used to improve the structural quality of the non-polar a-plane AlGaN epilayer. The characterisations were carried out by high-resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM) and Hall effect measurement. The XRD and AFM results demonstrate that the Al-composition-graded non-polar AlGaN buffer layer significantly improved the crystalline quality and the surface morphology of the top layer. A low root mean square roughness 1.52 nm is obtained from AFM, and relatively low background carrier concentration down to 3.9×  cm-3 is obtained from Hall effect measurement.

Keywords: non-polar AlGaN epilayer, Al composition-graded AlGaN layer, root mean square, background carrier concentration

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14630 Sol-Gel Erbium-Doped Silica-Hafnia Planar Waveguides

Authors: Mustapha El Mataouy, Abellatif Aaliti, Mouhamed Khaddor

Abstract:

Erbium actived silica-hafnia planar waveguides have been prepared by sol-gel route. The films were deposited on vitreous silica substrates using dip-coating technique. The parameters of preparation have been chosen to optimize the waveguides for operation in the near infrared (NIR) region, and to increase the luminescence efficiency of the metastable 4I13/2 state of Erbium ions. The waveguides properties were determined by m-lines spectroscopy, loss measurements. Waveguide Raman and luminescence spectroscopy were used to obtain information about the structure of the prepared films and about the dynamical process related to the emission in the C telecom band (1530nm-1565nm) of the Erbium ions. The results are discussed with the aim of comparing the structural and optical properties of Erbium activated silica-hafnia planar waveguides with different molar ratio of Si / Hf.

Keywords: erbium, optical amplifiers, silica-hafnia, sol-gel, waveguide

Procedia PDF Downloads 208