Search results for: electrical characteristics of capacitive touchscreen

Authors: M. O. Durojaye, J. T. Agee

Abstract:

This paper is on the one-dimensional, positive temperature coefficient (PTC) thermistor model with a hyperbolic tangent function approximation for the electrical conductivity. The method of asymptotic expansion was adopted to obtain the steady state solution and the unsteady-state response was obtained using the method of lines (MOL) which is a well-established numerical technique. The approach is to reduce the partial differential equation to a vector system of ordinary differential equations and solve numerically. Our analysis shows that the hyperbolic tangent approximation introduced is well suitable for the electrical conductivity. Numerical solutions obtained also exhibit correct physical characteristics of the thermistor and are in good agreement with the exact steady state solutions.

Keywords: electrical conductivity, hyperbolic tangent function, PTC thermistor, method of lines

Procedia PDF Downloads 323

Authors: Madina Alimova, Margulan Ibraimov, Ayan Tileu

Abstract:

The paper describes methods for obtaining porous structures with the properties of a silicon-based memristor and explains the electrical properties of porous silicon films. Based on the results, there is a positive shift in the current-voltage characteristics (CVC) after each measurement, i.e., electrical properties depend not only on the applied voltage but also on the previous state. After 3 minutes of rest, the film returns to its original state (reset). The method for obtaining a porous silicon nanofilm with the properties of a memristor is simple and does not require additional effort. Based on the measurement results, the typical memristive behavior of the porous silicon nanofilm is analyzed.

Keywords: porous silicon, current-voltage characteristics, memristor, nanofilms

Procedia PDF Downloads 130

Authors: Nima E. Gorji

Abstract:

The performance and characteristics of a hybrid heterojunction single-walled carbon nanotube and GaAs solar cell is modelled and numerically simulated using AMPS-1D device simulation tool. The device physics and performance parameters with different junction parameters are analysed. The results suggest that the open-circuit voltage changes very slightly by changing the work function, acceptor and donor density while the other electrical parameters reach to an optimum value. Increasing the concentration of a discrete defect density in the absorber layer decreases the electrical parameters. The current-voltage characteristics, quantum efficiency, band gap and thickness variation of the photovoltaic response will be quantitatively considered.

Keywords: carbon nanotube, GaAs, hybrid solar cell, AMPS-1D modelling

Procedia PDF Downloads 330

Authors: Rajesh Agarwal

Abstract:

Carrier mobility at the organic/insulator interface is essential to the performance of organic thin film transistors (OTFT). The present work describes estimation of field dependent mobility (FDM) parameters and the threshold voltage of an OTFT using a simple, easy to fabricate two terminal asymmetric capacitive test structure using admittance measurements. Conventionally, transfer characteristics are used to estimate the threshold voltage in an OTFT with field independent mobility (FIDM). Yet, this technique breaks down to give accurate results for devices with high contact resistance and having field dependent mobility. In this work, a new technique is presented for characterization of long channel organic capacitor (LCOC). The proposed technique helps in the accurate estimation of mobility enhancement factor (γ), the threshold voltage (V_th) and band mobility (µ₀) using capacitance-voltage (C-V) measurement in OTFT. This technique also helps to get rid of making short channel OTFT or metal-insulator-metal (MIM) structures for making C-V measurements. To understand the behavior of devices and ease of analysis, transmission line compact model is developed. The 2-D numerical simulation was carried out to illustrate the correctness of the model. Results show that proposed technique estimates device parameters accurately even in the presence of contact resistance and field dependent mobility. Pentacene/Poly (4-vinyl phenol) based top contact bottom-gate OTFT’s are fabricated to illustrate the operation and advantages of the proposed technique. Small signal of frequency varying from 1 kHz to 5 kHz and gate potential ranging from +40 V to -40 V have been applied to the devices for measurement.

Keywords: capacitance, mobility, organic, thin film transistor

Procedia PDF Downloads 165

Authors: Seyed Abolhassan Naeini, Maedeh Akhavan Tavakkoli

Abstract:

Determining soil engineering properties is essential for geotechnical problems. In addition to high cost, invasive soil survey methods can be time-consuming, so geophysical methods can be an excellent choice to determine soil characteristics. In this study, geoelectric investigation using the Wenner arrangement method has been used to determine the amount of soil corrosion in soil layers in a project site as a case study. This study aims to assess the degree of corrosion of soil layers to a depth of 5 meters and find the variation of soil electrical resistance versus depth. For this purpose, the desired points in the study area were marked and specified, and all withdrawals were made within the specified points. The collected data have been processed by standard and accepted methods, and the results have been presented in the form of calculation tables and curves of electrical resistivity with depth.

Keywords: Wenner array, geoelectric, soil corrosion, electrical soil resistance

Procedia PDF Downloads 104

Authors: Vaishnavi Patil, K. M. Kurundkar

Abstract:

Electrical Drives play a vital role in industry development and applications. Drives have an inevitable part in the needs of various fields such as industry, commercial, and domestic applications. The development of material technology, Power Electronics devices, and accompanying applications led to the focus of industry and researchers on high-speed electrical drives. Numerous articles charted the applications of electrical machines and various converters for high-speed applications. The choice depends on the application under study. This paper goals to highlight high-speed applications, main challenges, and some applications of electrical drives in the field.

Keywords: high-speed, electrical machines, drives, applications

Procedia PDF Downloads 68

Authors: Behnoush Dousti, Ye Choi, Gil S. Lee

Abstract:

Supercapacitors which are also known as ultra supercapacitors play a significant role in development of energy storage devices owing to their high power density and rate capability. Nobel research has been conducted on micro scale energy storage systems currently to address the demand for smaller wearable technology and portable devices. Improving the performance of these microsupercapacitors have been always a challenge. Here, we demonstrate a facile fabrication of a microsupercapacitor (MSC) with interdigitated electrodes using novel structure of carbon nanotube sheets which are spun directly from as-grown carbon nanotube forests. Stability and performance of the device was tested using an aqueous PVA-H3PO4 gel electrolyte that also offers desirable electrochemical capacitive properties. High Coulombic efficiency around 100%, great rate capability and excellent capacitance retention over 15,000 cycles were obtained. Capacitive performance greatly improved with surface modification with acid and nitrogen doping of the CNT sheets. The high power density and stable cycling performance make this microsupercapacitor a suitable candidate for verity of energy storage application.

Keywords: carbon nanotube sheet, energy storage, solid state electrolyte, supercapacitor

Procedia PDF Downloads 143

Authors: Yong Seo Koo, Jong Ho Nam, Yong Nam Choi, Dae Yeol Yoo, Jung Woo Han

Abstract:

This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage.

Keywords: electro-static discharge (ESD), silicon controlled rectifier (SCR), holding voltage, protection circuit

Procedia PDF Downloads 380

Authors: Hani Baek, Gwang Min Sun, Chansun Shin, Sung Ho Ahn

Abstract:

Fast neutron irradiation using nuclear reactors is an effective method to improve switching loss and short circuit durability of power semiconductor (insulated gate bipolar transistors (IGBT) and insulated gate transistors (IGT), etc.). However, not only fast neutrons but also thermal neutrons, epithermal neutrons and gamma exist in the nuclear reactor. And the electrical properties of the IGBT may be deteriorated by the irradiation of gamma. Gamma irradiation damages are known to be caused by Total Ionizing Dose (TID) effect and Single Event Effect (SEE), Displacement Damage. Especially, the TID effect deteriorated the electrical properties such as leakage current and threshold voltage of a power semiconductor. This work can confirm the effect of the gamma irradiation on the electrical properties of 600 V NPT-IGBT. Irradiation of gamma forms lattice defects in the gate oxide and Si-SiO₂ interface of the IGBT. It was confirmed that this lattice defect acts on the center of the trap and affects the threshold voltage, thereby negatively shifted the threshold voltage according to TID. In addition to the change in the carrier mobility, the conductivity modulation decreases in the n-drift region, indicating a negative influence that the forward voltage drop decreases. The turn-off delay time of the device before irradiation was 212 ns. Those of 2.5, 10, 30, 70 and 100 kRad(Si) were 225, 258, 311, 328, and 350 ns, respectively. The gamma irradiation increased the turn-off delay time of the IGBT by approximately 65%, and the switching characteristics deteriorated.

Keywords: NPT-IGBT, gamma irradiation, switching, turn-off delay time, recombination, trap center

Procedia PDF Downloads 157

Authors: Tesfaye Mengistu

Abstract:

Power cables play a crucial role in the transmission and distribution of electrical energy. As the electricity generation, transmission, distribution, and storage systems become smarter, there is a growing emphasis on incorporating intelligent approaches to ensure the reliability of power cables. Various types of electrical cables are employed for transmitting and distributing electrical energy, with cross-linked polyethylene (XLPE) cables being widely utilized due to their exceptional electrical and mechanical properties. However, insulation defects can occur in XLPE cables due to subpar manufacturing techniques during production and cable joint installation. To address this issue, experts have proposed different methods for monitoring XLPE cables. Some suggest the use of interdigital capacitive (IDC) technology for online monitoring, while others propose employing continuous wave (CW) terahertz (THz) imaging systems to detect internal defects in XLPE plates used for power cable insulation. In this study, we have developed models that employ a custom dataset collected locally to classify the physical safety status of individual power cables. Our models aim to replace physical inspections with computer vision and image processing techniques to classify defective power cables from non-defective ones. The implementation of our project utilized the Python programming language along with the TensorFlow package and a convolutional neural network (CNN). The CNN-based algorithm was specifically chosen for power cable defect classification. The results of our project demonstrate the effectiveness of CNNs in accurately classifying power cable defects. We recommend the utilization of similar or additional datasets to further enhance and refine our models. Additionally, we believe that our models could be used to develop methodologies for detecting power cable defects from live video feeds. We firmly believe that our work makes a significant contribution to the field of power cable inspection and maintenance. Our models offer a more efficient and cost-effective approach to detecting power cable defects, thereby improving the reliability and safety of power grids.

Keywords: artificial intelligence, computer vision, defect detection, convolutional neural net

Procedia PDF Downloads 114

Authors: İsmail İnce

Abstract:

The aim of this study is to determine index and mechanical properties of pyroclastic rock in a practical way by means of electrical resistivity method. For this purpose, electrical resistivity, uniaxial compressive strength, point load strength, P-wave velocity, density and porosity values of 10 different pyroclastic rocks were measured in the laboratory. A simple regression analysis was made among the index-mechanical properties of the samples compatible with electrical resistivity values. A strong exponentially relation was found between index-mechanical properties and electrical resistivity values. The electrical resistivity method can be used to assess the engineering properties of the rock from which it is difficult to obtain regular shaped samples as a non-destructive method.

Keywords: electrical resistivity, index-mechanical properties, pyroclastic rocks, regression analysis

Procedia PDF Downloads 473

Authors: A.G. S. Aldajani, N. Smida, M. G. Althobaiti, B. Zaidi

Abstract:

In order to exploit the good electrical properties of anthracene and the excellent properties of fluorescein, new hybrid material has been synthesized (An-Fl). Current-voltage measurements were done on a new single-layer ITO/An-FL/Al device of typically 100 nm thickness. Atypical diode behavior is observed with a turn-on voltage of 4.4 V, a dynamic resistance of 74.07 KΩ and a rectification ratio of 2.02 due to unbalanced transport. Results show also that the current-voltage characteristics present three different regimes of the power-law (J~Vᵐ) for which the conduction mechanism is well described with space-charge-limited current conduction mechanism (SCLC) with a charge carrier mobility of 2.38.10⁻⁵cm2V⁻¹S⁻¹. Moreover, the electrical transport properties of this device have been carried out using a dependent frequency study in the range (50 Hz–1.4 MHz) for different applied biases (from 0 to 6 V). At lower frequency, the σdc values increase with bias voltage rising, supporting that the mobile ion can hop successfully to its nearest vacant site. From σac and impedance measurements, the equivalent electrical circuit is evidenced, where the conductivity process is coherent with an exponential trap distribution caused by structural defects and/or chemical impurities.

Keywords: semiconducting polymer, conductivity, SCLC, impedance spectroscopy

Procedia PDF Downloads 179

Authors: Mudavath Raju, Bhaskar Gugulothu, B. Rajendra Naik

Abstract:

The rapid advances in Very Large Scale Integration (VLSI) technology has resulted in the reduction of minimum feature size to sub-quarter microns and switching time in tens of picoseconds or even less. As a result, the degradation of high-speed digital circuits due to signal integrity issues such as coupling effects, clock feedthrough, crosstalk noise and delay uncertainty noise. Crosstalk noise in VLSI interconnects is a major concern and reduction in VLSI interconnect has become more important for high-speed digital circuits. It is the most effectively considered in Deep Sub Micron (DSM) and Ultra Deep Sub Micron (UDSM) technology. Increasing spacing in-between aggressor and victim line is one of the technique to reduce the crosstalk. Guard trace or shield insertion in-between aggressor and victim is also one of the prominent options for the minimization of crosstalk. In this paper, far end crosstalk noise is estimated with mutual inductance and capacitance RLC interconnect model. Also investigated the extent of crosstalk in capacitive and inductively coupled interconnects to minimizes the same through shield insertion technique.

Keywords: VLSI, interconnects, signal integrity, crosstalk, shield insertion, guard trace, deep sub micron

Procedia PDF Downloads 187

Authors: M. H. Aldahrob, A. Kokce, S. Altindal, H. E. Lapa

Abstract:

In order to obtain the detailed information about the effect of (Zn-doped PVA) interfacial layer, surface states (Nss) and series resistance (Rs) on electrical characteristics, both Au/n- type 4H-SiC (MS) with and without (Zn doped PVA) interfacial layer were fabricated to compare. The main electrical parameters of them were investigated using forward and reverse bias current-voltage (I-V), capacitance-voltage (C-V) and conductance –voltage (G/W –V) measurements were performed at room temperature. Experimental results show that the value of ideality factor (n), zero –bias barrier height (ΦBo), Rs, rectifier rate (RR=IF/IR) and the density of Nss are strong functions interfacial layer and applied bias voltage. The energy distribution profile of Nss was obtained from forward bias I-V data by taking into account voltage dependent effective BH (ΦBo) and ideality factor (n(V)). Voltage dependent profile of Rs was also obtained both by using Ohm’s law and Nicollian and Brew methods. The other main diode parameters such as the concentration of doping donor atom (ND), Fermi energy level (EF).BH (ΦBo), depletion layer with (WD) were obtained by using the intercept and slope of the reverse bias C-2 vs V plots. It was found that (Zn-doped PVA) interfacial layer lead to a quite decrease in the values Nss, Rs and leakage current and increase in shunt resistance (Rsh) and RR. Therefore, we can say that the use of thin (Zn-doped PVA) interfacial layer can quite improved the performance of MS structure.

Keywords: interfacial polymer layer, thickness dependence, electric and dielectric properties, series resistance, interface state

Procedia PDF Downloads 249

Authors: Hyunseo Choi, Jaewan Hong, Seil Lee, Yang Mo Koo

Abstract:

Non-oriented (NO) electrical steel is one of the most important soft magnetic materials for rotating machines. Si has usually been added to electrical steels to reduce eddy current loss by increasing the electrical resistivity. Si content more than 3.5 wt% causes cracks during cold rolling due to increase of brittleness. Al also increases the electrical resistivity of the materials as much as Si. In addition, cold workability of Fe-Al is better than Fe-Si, so that Al can be added up to 6.0 wt%. However, the effect of Al contents on magnetic properties of electrical steels has not been studied in detail. Magnetic domains of {100} grains in electrical steels, ranging from 1.85 to 6.54 wt% Al, were observed by magneto-optic Kerr microscopy. Furthermore, the correlation of magnetic domains with magnetic properties was investigated. As Al contents increased, the magnetic domain size of {100} grains decreased due to lowered domain wall energy. Reorganization of magnetic domain structure became more complex as domain size decreased. Therefore, the addition of Al to electrical steel caused hysteresis loss to increase. Anomalous loss decreased and saturated after 4.68% Al.

Keywords: electrical steel, magnetic domain structure, Al addition, core loss, rearrangement of domains

Procedia PDF Downloads 245

Authors: Kyoung-il Do, Byung-seok Lee, Hee-guk Chae, Jeong-yun Seo Yong-seo Koo

Abstract:

In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage

Procedia PDF Downloads 398

Authors: Qiao Pei Wen, Ng Seng Lee, Sae Tae Veera, Chiu Ah Fong, Loke Weng Onn

Abstract:

Thin film thickness uniformity is crucial to get consistent film etch rate and device yield across the wafer. In the capacitive-coupled parallel plate PECVD system; the film thickness uniformity can be affected by many factors such as the heater temperature uniformity, the spacing between top and bottom electrode, RF power, pressure, gas flows and etc. In this paper, we studied how the PECVD SiN film thickness uniformity is affected by the substrate electrical conductivity and the RF power coupling efficiency. PECVD SiN film was deposited on 150-mm sapphire wafers in 200-mm Lam Sequel tool, fork marks were observed on the wafers. On the fork marks area SiN film thickness is thinner than that on the non-fork area. The forks are the wafer handler inside the process chamber to move the wafers from one station to another. The sapphire wafers and the ceramic forks both are insulator. The high resistivity of the sapphire wafers and the forks inhibits the RF power coupling efficiency during PECVD deposition, thereby reducing the deposition rate. Comparing between the high frequency and low frequency RF power (HFRF and LFRF respectively), the LFRF power coupling effect on the sapphire wafers is more dominant than the HFRF power on the film thickness. This paper demonstrated that the SiN thickness uniformity on sapphire wafers can be improved by depositing a thin TiW layer on the wafer before the SiN deposition. The TiW layer can be on the wafer surface, bottom or any layer before SiN deposition.

Keywords: PECVD SiN deposition, sapphire wafer, substrate electrical conductivity, RF power coupling, high frequency RF power, low frequency RF power, film deposition rate, thickness uniformity

Procedia PDF Downloads 376

Authors: S. Ben Brahim, T. H. Vuong, J. David, R. Bouallegue, M. Pietrzak-David

Abstract:

Electrical machine monitoring is important to protect motor from unexpected problems. Today, using wireless communication for electrical machines is interesting for both real time monitoring and diagnostic purposes. In this paper, we propose a system based on wireless communication IEEE 802.11 to control electrical machine. IEEE 802.11 standard is recommended for this type of applications because it provides a faster connection, better range from the base station, and better security. Therefore, our contribution is to study a new technique to control and monitor the rotating electrical machines (motors, generators) using wireless communication. The reliability of radio channel inside rotating electrical machine is also discussed. Then, the communication protocol, software and hardware design used for the proposed system are presented in detail and the experimental results of our system are illustrated.

Keywords: control, DFIM machine, electromagnetic field, EMC, IEEE 802.11, monitoring, rotating electrical machines, wireless communication

Procedia PDF Downloads 696

Authors: Amar Partap Singh Pharwaha, Shweta Rani

Abstract:

This paper is aimed at proposing a rhombus shaped wearable fractal antenna for wireless communication systems. The geometrical descriptors of the antenna have been obtained using bacterial foraging optimization (BFO) for wide band operation. The method of moment based IE3D software has been used to simulate the antenna and observed that miniaturization of 13.08% has been achieved without degrading the resonating properties of the proposed antenna. An analysis with different substrates has also been done in order to evaluate the effectiveness of electrical permittivity on the presented structure. The proposed antenna has low profile, light weight and has successfully demonstrated wideband and multiband characteristics for wearable electronic applications.

Keywords: BFO, bandwidth, electrical permittivity, fractals, wearable antenna

Procedia PDF Downloads 463

Authors: Ju-Na Hwang, Min-Hae Park, Kee-Joe Lim

Abstract:

Many studies have been conducted on DC transmission. Of power apparatus for DC transmission, High Voltage Direct Current (HVDC) cable systems are being evaluated because of the increase in power demand and transmission distance. Therefore, dc insulation characteristics of Liquid Silicone Rubber (LSR), which has various advantages such as short curing time and the ease of maintenance, were investigated to assess its performance as a HVDC insulation material for cable joints. The electrical performance of LSR added to Nano-Aluminum Trihydrate (ATH) was confirmed by measurements of the breakdown strength and electrical conductivity. In addition, field emission scanning electron microscope (FE-SEM) was used as a means of confirmation of nano-filler dispersion state. The LSR nano-composite was prepared by compounding LSR filled nano-sized ATH filler. The DC insulation properties of LSR added to nano-sized ATH fillers were found to be superior to those of the LSR without filler.

Keywords: liquid silicone rubber, nano-composite, HVDC insulation, cable joints

Procedia PDF Downloads 462

Authors: Khin Fai Chen, Jee-Hou Ho, Eng Hwa Yap

Abstract:

An acoustic micro-energy harvester (AMEH) is developed to convert wasted acoustical energy into useful electrical energy. AMEH is mathematically modeled using lumped element modelling (LEM) and Euler-Bernoulli beam (EBB) modelling. An experiment is designed to validate the mathematical model and assess the feasibility of AMEH. Comparison of theoretical and experimental data on critical parameter value such as Mm, Cms, dm and Ceb showed the variances are within 1% to 6%, which is reasonably acceptable. Hence, AMEH mathematical model is validated. Then, AMEH undergoes bandwidth tuning for performance optimization for further experimental work. The AMEH successfully produces 0.9 V⁄(m⁄s^2) and 1.79 μW⁄(m^2⁄s^4) at 60Hz and 400kΩ resistive load which only show variances about 7% compared to theoretical data. By integrating a capacitive load of 200µF, the discharge cycle time of AMEH is 1.8s and the usable energy bandwidth is available as low as 0.25g. At 1g and 60Hz resonance frequency, the averaged power output is about 2.2mW which fulfilled a range of wireless sensors and communication peripherals power requirements. Finally, the design for AMEH is assessed, validated and deemed as a feasible design.

Keywords: piezoelectric, acoustic, energy harvester

Procedia PDF Downloads 282

Authors: Wiqar Hussain Shah

Abstract:

The electrical and thermal properties of the doped Tellurium Telluride (Tl10Te6) chalcogenide nano-particles are mainly characterized by a competition between metallic (hole doped concentration) and semi-conducting state. We have studied the effects of Sn doping on the electrical and thermoelectric properties of Tl10-xSnxTe6 (1.00 ≤x≤ 2.00), nano-particles, prepared by solid state reactions in sealed silica tubes and ball milling method. Structurally, all these compounds were found to be phase pure as confirmed by the x-rays diffractometery (XRD) and energy dispersive X-ray spectroscopy (EDS) analysis. Additionally crystal structure data were used to model the data and support the findings. The particles size was calculated from the XRD data by Scherrer’s formula. The EDS was used for an elemental analysis of the sample and declares the percentage of elements present in the system. The thermo-power or Seebeck co-efficient (S) was measured for all these compounds which show that S increases with increasing temperature from 295 to 550 K. The Seebeck coefficient is positive for the whole temperature range, showing p-type semiconductor characteristics. The electrical conductivity was investigated by four probe resistivity techniques revealed that the electrical conductivity decreases with increasing temperature, and also simultaneously with increasing Sn concentration. While for Seebeck coefficient the trend is opposite which is increases with increasing temperature. These increasing behavior of Seebeck coefficient leads to high power factor which are increases with increasing temperature and Sn concentration except For Tl8Sn2Te6 because of lowest electrical conductivity but its power factor increases well with increasing temperature.

Keywords: Sn doping in Tellurium Telluride nano-materials, electron holes competition, Seebeck co-efficient, effects of Sn doping on Electrical conductivity, effects on Power factor

Procedia PDF Downloads 45

Authors: Marcin Baranski

Abstract:

This article presents a vibration diagnostic method designed for permanent magnets (PM) traction motors. Those machines are commonly used in traction drives of electrical vehicles. Specific structural properties of machines excited by permanent magnets are used in this method - electromotive force (EMF) generated due to vibrations. This work presents: field-circuit model, results of static tests, results of calculations and simulations.

Keywords: electrical vehicle, permanent magnet, traction drive, vibrations, electrical machine, eccentricity

Procedia PDF Downloads 629

Authors: Emre Alan, Yusuf Yamanturk, Gokay Bas

Abstract:

Non-grain oriented electrical steels are high silicon containing steels in which the direction of magnetism is intended the same in any direction of the material. Major applications of non-grain-oriented electrical steels are electrical motors, generators, etc. where low magnetic losses are required. Selection of proper hot rolling process parameters is an important factor in order to produce a material that has desired magnetic properties. In this study, the effect of finishing and coiling temperatures on magnetic properties of Fe-3%Si non-grain oriented electrical steels will be investigated. Additionally, the effect of slab reheating temperature at same entry finishing temperature will be investigated by means of reduction in roughing mill pass number from 1-5 to 1-3.

Keywords: electrical steels, hot rolling, magnetic properties, roughing mill

Procedia PDF Downloads 326

Authors: Mitsuhiro Okayasu

Abstract:

To better understand the lattice characteristics of lead zirconate titanate (PZT) ceramics, the lattice orientations and domain-switching characteristics have been directly examined during loading and unloading using various experimental techniques. Upon loading, the PZT ceramics are fractured linear and nonlinearly during the compressive loading process. The strain characteristics of the PZT ceramic were directly affected by both the lattice and domain switching strain. Due to the piezoelectric ceramic, electrical activity of lightning-like behavior occurs in the PZT ceramics, which attributed to the severe domain-switching leading to weak piezoelectric property. The characteristics of domain-switching and reverse switching are detected during the loading and unloading processes. The amount of domain-switching depends on the grain, due to different stress levels. In addition, two patterns of 90˚ domain-switching systems are characterized, namely (i) 90˚ turn about the tetragonal c-axis and (ii) 90˚ rotation of the tetragonal a-axis. In this case, PZT ceramic was loaded by the thermal stress at 80°C. Extent of domain switching is related to the direction of c-axis of the tetragonal structure, e.g., that axis, orientated close to the loading direction, makes severe domain switching. It is considered that there is 90˚ domain switching, but in actual, the angle of domain switching is less than 90˚, e.g., 85.4° ~ 90.0°. In situ TEM observation of the domain switching characteristics of PZT ceramic has been conducted with increasing the sample temperature from 25°C to 300°C, and the domain switching like behavior is directly observed from the lattice image, where the severe domain switching occurs less than 100°C.

Keywords: PZT, lead zirconate titanate, piezoelectric ceramic, domain switching, material property

Procedia PDF Downloads 203

Authors: Porag Jyoti Ligira, Gargi Khanna

Abstract:

The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthreshold slope of ~60 mV/decade can be achieved by using highk dielectric. The effects of variation of spacer length and material on the electrical characteristic of BPJLT are also investigated in the paper. The ION / IOFF ratio improvement is of the order of 107 and the OFF current reduction of 10-4 is obtained by using gate dielectric of HfO2 instead of SiO2.

Keywords: spacer, BPJLT, high-k, double gate

Procedia PDF Downloads 429

Authors: Jung Ho Yang, Yong Soo Kim

Abstract:

Electrical units are operated by electrical and electronic components. An environmental test sequence is useful for testing electrical units to reduce reliability issues. This study introduces test sequence guidelines based on relevant principles and considerations for electronic testing according to international standard IEC-60068-1 and the United States military standard MIL-STD-810G. Then, test sequences were proposed based on the descriptions for each test. Finally, General Motors (GM) specification GMW3172 was interpreted and compared to IEC-60068-1 and MIL-STD-810G.

Keywords: reliability, environmental test sequence, electrical units, IEC 60068-1, MIL-STD-810G

Procedia PDF Downloads 505

Authors: Arnab Hazra

Abstract:

Breath analysis is a quick, noninvasive and inexpensive technique for disease diagnosis can be used on people of all ages without any risk. Only a limited number of volatile organic compounds (VOCs) can be associated with the occurrence of specific diseases. These VOCs can be considered as disease markers or breath markers. Selective detection with specific concentration of breath marker in exhaled human breath is required to detect a particular disease. For example, acetone (C₃H₆O), ethanol (C₂H₅OH), ethane (C₂H₆) etc. are the breath markers and abnormal concentrations of these VOCs in exhaled human breath indicates the diseases like diabetes mellitus, renal failure, breast cancer respectively. Nanomaterial-based vapor sensors are inexpensive, small and potential candidate for the detection of breath markers. In practical measurement, selectivity is the most crucial issue where trace detection of breath marker is needed to identify accurately in the presence of several interfering vapors and gases. Current article concerns a novel technique for selective and lower ppb level detection of breath markers at very low temperature based on TiO₂ nanotube array based vapor sensor devices. Highly ordered and oriented TiO₂ nanotube array was synthesized by electrochemical anodization of high purity tatinium (Ti) foil. 0.5 wt% NH₄F, ethylene glycol and 10 vol% H₂O was used as the electrolyte and anodization was carried out for 90 min with 40 V DC potential. Au/TiO₂ Nanotube/Ti, sandwich type sensor device was fabricated for the selective detection of VOCs in low concentration range. Initially, sensor was characterized where resistive and capacitive change of the sensor was recorded within the valid concentration range for individual breath markers (or organic vapors). Sensor resistance was decreased and sensor capacitance was increased with the increase of vapor concentration. Now, the ratio of resistive slope (mR) and capacitive slope (mC) provided a concentration independent constant term (M) for a particular vapor. For the detection of unknown vapor, ratio of resistive change and capacitive change at any concentration was same to the previously calculated constant term (M). After successful identification of the target vapor, concentration was calculated from the straight line behavior of resistance as a function of concentration. Current technique is suitable for the detection of particular vapor from a mixture of other interfering vapors.

Keywords: breath marker, vapor sensors, selective detection, TiO₂ nanotube array

Procedia PDF Downloads 156

Authors: Yuni Rochmawati, Luluk Il Mukarromah

Abstract:

Android is a mobile operating system (OS) based on the linux kerrnel and currently developed by google. With a user interface based on direct manipulation, Android is designed primarily for touchscreen mobile deviced such as smartphone and tablet computer, with specialized user interface for television (Android TV), cars (Android Auto), and wrist watches (Android Wear). Now, almost all peoples using smartphone. Smartphone seems to be a must-have object, because smartphone has many benefits. In addition, of course smartphone have many benefits for education, like resume of lesson that form of e-book. However, this article is not about resume of lesson. This article is about practical based on android, exactly for physics. Therefore, we will explain our idea about physics’s practical based on android and for output, we wish many students will be like to studying physics and always remember about physics’s phenomenon by physics’s practical based on android.

Keywords: android, smartphone, physics, practical

Procedia PDF Downloads 243

Authors: M. Momoh, S. Abdullahi, A. U. Moreh

Abstract:

Zinc oxide (ZnO) thin films were prepared on corning (7059) glass substrates at a thickness of 75.5 and 130.5 nm by RF sputtering technique. The deposition was carried out at room temperature after which the samples were annealed in open air at 150°C. The electrical and structural properties of these films were studied. The electrical properties of the films were monitored by four-point probe method while the structural properties were studied by X-ray diffraction (XRD). It was found that the electrical resistance of the films decreases with increase in the thickness of the films. The XRD analysis of the films showed that the films have a peak located at 34.31°-34.35° with hkl (002). Other parameters calculated include the stress (σ) and the grain size (D).

Keywords: electrical properties, film thickness, structural properties, zinc oxide

Procedia PDF Downloads 381