Search results for: double pass transistor technology

Authors: Abdelmonaem Ayachi, Belgacem Hamdi

Abstract:

This paper presents a fault-tolerant implementation for adder schemes using the dual duplication code. To prove the efficiency of the proposed method, the circuit is simulated in double pass transistor CMOS 32nm technology and some transient faults are voluntary injected in the Layout of the circuit. This fully differential implementation requires only 20 transistors which mean that the proposed design involves 28.57% saving in transistor count compared to standard CMOS technology.

Keywords: digital electronics, integrated circuits, full adder, 32nm CMOS tehnology, double pass transistor technology, fault toleance, self-checking

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Authors: Hamdi Belgacem, Fradi Aymen

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In this paper we present a low power, low cost differential logic unit (LU). The proposed LU receives dual-rail inputs and generates dual-rail outputs. The proposed circuit can be used in Arithmetic and Logic Units (ALU) of processor. It can be also dedicated for self-checking applications based on dual duplication code. Four logic functions as well as their inverses are implemented within a single Logic Unit. The hardware overhead for the implementation of the proposed LU is lower than the hardware overhead required for standard LU implemented with standard CMOS logic style. This new implementation is attractive as fewer transistors are required to implement important logic functions. The proposed differential logic unit can perform 8 Boolean logical operations by using only 16 transistors. Spice simulations using a 32 nm technology was utilized to evaluate the performance of the proposed circuit and to prove its acceptable electrical behaviour.

Keywords: differential logic unit, double pass transistor logic, low power CMOS design, low cost CMOS design

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Authors: Min-ju Kwon, Chae-won Kim, Jeong-yun Seo, Hee-guk Chae, Yong-seo Koo

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In this paper, we presented the LDO (low-dropout) regulator which enhanced the PSRR by applying the constant current source generation technique through the BGR (Band Gap Reference) to form the noise sensing circuit. The current source through the BGR has a constant current value even if the applied voltage varies. Then, the noise sensing circuit, which is composed of the current source through the BGR, operated between the error amplifier and the pass transistor gate of the LDO regulator. As a result, the LDO regulator has a PSRR of -68.2 dB at 1k Hz, -45.85 dB at 1 MHz and -45 dB at 10 MHz. the other performance of the proposed LDO was maintained at the same level of the conventional LDO regulator.

Keywords: LDO regulator, noise sensing circuit, current reference, pass transistor

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Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

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Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, kink effect

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Authors: M. Kessi

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We investigated the effect of the magnetic field on carrier transport phenomena in the transistor channel region of Double-Gate Metal-Oxide-Semiconductor Field-Effect Transistor (MOSFET). This explores the Lorentz force and basic physical properties of solids exposed to a constant external magnetic field. The magnetic field modulates the electrons and potential distribution in the case of silicon Tunnel FETs. This modulation shows up in the device's external electrical characteristics such as ON current (ION), subthreshold leakage current (IOF), the threshold voltage (VTH), the magneto-transconductance (gm) and the output magneto-conductance (gDS) of Tunnel FET. Moreover, the channel doping concentration and potential distribution are obtained using the numerical method by solving Poisson’s transport equation in 3D modules semiconductor magnetic sensors available in Silvaco TCAD tools. The numerical simulations of the magnetic nano-sensors are relatively new. In this work, we present the results of numerical simulations based on 3D magnetic sensors. The results show excellent accuracy comportment and good agreement compared with that obtained in the experimental study of MOSFETs technology.

Keywords: single-gate MOSFET, magnetic field, hall field, Lorentz force

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Authors: Spyridon Nikolaidis

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A modeling approach for CMOS gates is presented based on the use of the equivalent inverter. A new model for the inverter has been developed using a simplified transistor current model which incorporates the nanoscale effects for the planar technology. Parametric expressions for the output voltage are provided as well as the values of the output and supply current to be compatible with the CCS technology. The model is parametric according the input signal slew, output load, transistor widths, supply voltage, temperature and process. The transistor widths of the equivalent inverter are determined by HSPICE simulations and parametric expressions are developed for that using a fitting procedure. Results for the NAND gate shows that the proposed approach offers sufficient accuracy with an average error in propagation delay about 5%.

Keywords: CMOS gate modeling, inverter modeling, transistor current mode, timing model

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Authors: Biswarup Mukherjee, Aniruddha Ghoshal

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In this paper, we propose a new technique for implementing a low power high speed full adder using 8 transistors. Full adder circuits are used comprehensively in Application Specific Integrated Circuits (ASICs). Thus it is desirable to have high speed operation for the sub components. The explored method of implementation achieves a high speed low power design for the full adder. Simulated results indicate the superior performance of the proposed technique over conventional 28 transistor CMOS full adder. Detailed comparison of simulated results for the conventional and present method of implementation is presented.

Keywords: high speed low power full adder, 2-T MUX, 3-T XOR, 8-T FA, pass transistor logic, CMOS (complementary metal oxide semiconductor)

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Authors: Suruchi Saini, Hitender Kumar Tyagi

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With the rapid progress of the nanotechnology industry, it is becoming increasingly important to have compact semiconductor devices to function and offer the best results at various technology nodes. While performing the scaling of the device, several short-channel effects occur. To minimize these scaling limitations, some device architectures have been developed in the semiconductor industry. FinFET is one of the most promising structures. Also, the double-gate 2D Fin field effect transistor has the benefit of suppressing short channel effects (SCE) and functioning well for less than 14 nm technology nodes. In the present research, the MuGFET simulation tool is used to analyze and explain the electrical behaviour of a double-gate 2D Fin field effect transistor. The drift-diffusion and Poisson equations are solved self-consistently. Various models, such as Fermi-Dirac distribution, bandgap narrowing, carrier scattering, and concentration-dependent mobility models, are used for device simulation. The transfer and output characteristics of the double-gate 2D Fin field effect transistor are determined at 10 nm technology node. The performance parameters are extracted in terms of threshold voltage, trans-conductance, leakage current and current on-off ratio. In this paper, the device performance is analyzed at different structure parameters. The utilization of the Id-Vg curve is a robust technique that holds significant importance in the modeling of transistors, circuit design, optimization of performance, and quality control in electronic devices and integrated circuits for comprehending field-effect transistors. The FinFET structure is optimized to increase the current on-off ratio and transconductance. Through this analysis, the impact of different channel widths, source and drain lengths on the Id-Vg and transconductance is examined. Device performance was affected by the difficulty of maintaining effective gate control over the channel at decreasing feature sizes. For every set of simulations, the device's features are simulated at two different drain voltages, 50 mV and 0.7 V. In low-power and precision applications, the off-state current is a significant factor to consider. Therefore, it is crucial to minimize the off-state current to maximize circuit performance and efficiency. The findings demonstrate that the performance of the current on-off ratio is maximum with the channel width of 3 nm for a gate length of 10 nm, but there is no significant effect of source and drain length on the current on-off ratio. The transconductance value plays a pivotal role in various electronic applications and should be considered carefully. In this research, it is also concluded that the transconductance value of 340 S/m is achieved with the fin width of 3 nm at a gate length of 10 nm and 2380 S/m for the source and drain extension length of 5 nm, respectively.

Keywords: current on-off ratio, FinFET, short-channel effects, transconductance

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Authors: Rana Mahmoud

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This study represents a systematic study of the Operational Transconductance Amplifiers capacitance (OTA-C) filters or as it is often called Gm-C filters. OTA-C filters have been paid a great attention for the last decades. As Gm-C filters operate in an open loop topology, this makes them flexible to perform in low and high frequencies. As such, Gm-C filters can be used in various wireless communication applications. Another property of Gm-C filters is its electronic tunability, thus different filter frequency characteristics can be obtained without changing the inductance and resistance values. This can be achieved by an OTA (Operational Transconductance Amplifier) and a capacitor. By tuning the OTA transconductance, the cut-off frequency will be tuned and different frequency responses are achieved. Different high-order analog filters can be design using Gm-C filters including low pass, high pass and band pass filters. 1st and 2nd order low pass, high pass and band pass filters are presented in this paper.

Keywords: Gm-C, filters, low-pass, high-pass, band-pass

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Authors: Fawzia Al-Sakeer, Hassan Aldeeb

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Development in the communications field is proceeding at an amazing speed, which has led researchers to improve and develop electronic circuits by increasing their efficiency and reducing their size to reduce the weight of electronic devices. One of the most important of these circuits is the band-pass filter, which is what made us carry out this research, which aims to use an alternate technology to design a dual band-pass filter by using a stepped impedance microstrip transmission line. We designed a filter that works at two center frequency bands by designing with the ADS program, and the results were excellent, as we obtained the two design frequencies, which are 1 and 3GHz, and the values of insertion loss S11, which was more than 21dB with a small area.

Keywords: band pass filter, dual band band-pass filter, ADS, microstrip filter, stepped impedance

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Authors: Porag Jyoti Ligira, Gargi Khanna

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The paper presents a simulation study of the electrical characteristic of Bulk Planar Junctionless Transistor (BPJLT) using spacer. The BPJLT is a transistor without any PN junctions in the vertical direction. It is a gate controlled variable resistor. The characteristics of BPJLT are analyzed by varying the oxide material under the gate. It can be shown from the simulation that an ideal subthreshold slope of ~60 mV/decade can be achieved by using highk dielectric. The effects of variation of spacer length and material on the electrical characteristic of BPJLT are also investigated in the paper. The ION / IOFF ratio improvement is of the order of 107 and the OFF current reduction of 10-4 is obtained by using gate dielectric of HfO2 instead of SiO2.

Keywords: spacer, BPJLT, high-k, double gate

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Authors: Pejman Hosseinioun, Abolghasem Ghasempour, Elham Gholami, Hamed Sarbazi

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Considering the development in global semiconductor technology, it is anticipated that gadgets such as diodes and resonant transistor tunnels (RTD/RTT), Single electron transistors (SET) and quantum cellular automata (QCA) will substitute CMOS (Complementary Metallic Oxide Semiconductor) gadgets in many applications. Unfortunately, these new technologies cannot disembark the common Boolean logic efficiently and are only appropriate for liminal logic. Therefor there is no doubt that with the development of these new gadgets it is necessary to find new MacDraw technologies which are compatible with them. Resonant transistor tunnels (RTD/RTT) and circuit MacDraw with enhanced computing abilities are candida for accumulating Nano criterion in the future. Quantum cellular automata (QCA) are also advent Nano technological gadgets for electrical circuits. Advantages of these gadgets such as higher speed, smaller dimensions, and lower consumption loss are of great consideration. QCA are basic gadgets in manufacturing gates, fuses and memories. Regarding the complex Nano criterion physical entity, circuit designers can focus on logical and constructional design to decrease complication in MacDraw. Moreover Single electron technology (SET) is another noteworthy gadget considered in Nano technology. This article is a survey in future of Nano technology in digital MacDraw.

Keywords: nano technology, resonant transistor tunnels, quantum cellular automata, semiconductor

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Authors: Zina Saheb, Ezz El-Masry

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As CMOS technology scaling down, Silicon oxide thickness (SiO2) become very thin (few Nano meters). When SiO2 is less than 3nm, gate direct tunneling (DT) leakage current becomes a dormant problem that impacts the transistor performance. Floating gate MOSFET (FGMOSFET) has been used in many low-voltage and low-power applications. Most of the available simulation models of FGMOSFET for analog circuit design does not account for gate DT current and there is no accurate analysis for the gate DT. It is a crucial to use an accurate mode in order to get a realistic simulation result that account for that DT impact on FGMOSFET performance effectively.

Keywords: CMOS transistor, direct-tunneling current, floating-gate, gate-leakage current, simulation model

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Authors: Ashwani Kumar

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Abstract- This study presents an analytical modeling approach for analyzing the drain current behavior in Tunnel Field-Effect Transistor (TFET) biosensors used for the detection of DNA biomolecules. The proposed model focuses on elucidating the relationship between the drain current and the presence of DNA biomolecules, taking into account the impact of various device parameters and biomolecule characteristics. Through comprehensive analysis, the model offers insights into the underlying mechanisms governing the sensing performance of TFET biosensors, aiding in the optimization of device design and operation. A non-local tunneling model is incorporated with other essential models to accurately trace the simulation and modeled data. An experimental validation of the model is provided, demonstrating its efficacy in accurately predicting the drain current response to DNA biomolecule detection. The sensitivity attained from the analytical model is compared and contrasted with the ongoing research work in this area.

Keywords: biosensor, double-gate TFET, DNA detection, drain current modeling, sensitivity

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Authors: Mohammad Hosseini

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Ultrafast transistor laser investigated here has the graded index separate confinement heterostructure (GRIN-SCH) in its base region. Resonance-free optical frequency response with -3dB bandwidth of more than 26 GHz has been achieved for a single quantum well transistor laser by using graded index layers of AlξGa1-ξAs (ξ: 0.1→0) on the left side of the quantum well and AlξGa1-ξAs (ξ: 0.05→0) in the right side of quantum well. All required parameters, including quantum well and base transit time, optical confinement factor and spontaneous recombination lifetime, have been calculated using a self-consistent charge control model.

Keywords: transistor laser, ultrafast, GRIN-SCH, -3db optical bandwidth, AlξGa1-ξAs

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Authors: P. Geetha, R. S. D. Wahida Banu

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The crowning advances in Silicon based electronic technology have dominated the computation world for the past decades. The captivating performance of Si devices lies in sustainable scaling down of the physical dimensions, by that increasing device density and improved performance. But, the fundamental limitations due to physical, technological, economical, and manufacture features restrict further miniaturization of Si based devices. The pit falls are due to scaling down of the devices such as process variation, short channel effects, high leakage currents, and reliability concerns. To fix the above-said problems, it is needed either to follow a new concept that will manage the current hitches or to support the available concept with different materials. The new concept is to design spintronics, quantum computation or two terminal molecular devices. Otherwise, presently used well known three terminal devices can be modified with different materials that suits to address the scaling down difficulties. The first approach will occupy in the far future since it needs considerable effort; the second path is a bright light towards the travel. Modelling paves way to know not only the current-voltage characteristics but also the performance of new devices. So, it is desirable to model a new device of suitable gate control and project the its abilities towards capability of handling high current, high power, high frequency, short delay, and high velocity with excellent electronic and optical properties. Carbon nanotube became a thriving material to replace silicon in nano devices. A well-planned optimized utilization of the carbon material leads to many more advantages. The unique nature of this organic material allows the recent developments in almost all fields of applications from an automobile industry to medical science, especially in electronics field-on which the automation industry depends. More research works were being done in this area. This paper reviews the carbon nanotube field effect transistor with various gate configurations, number of channel element, CNT wall configurations and different modelling techniques.

Keywords: array of channels, carbon nanotube field effect transistor, double gate transistor, gate wrap around transistor, modelling, multi-walled CNT, single-walled CNT

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Authors: Sangeeta Singh, Pankaj Kumar, P. N. Kondekar

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In this paper, the transient device performance analysis of n-type Gate Inside Junctionless Transistor (GIJLT)has been evaluated. 3-D Bohm Quantum Potential (BQP)transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay product, intrinsic gate delay and energy delay product as compared to Gate-all-around transistors GAA-JLT. In addition to this, various other device performance parameters namely, on/off current ratio, short channel effects (SCE), transconductance Generation Factor(TGF) and unity gain cut-off frequency (fT) and subthreshold slope (SS) of the GI-JLT and Gate-all-around junctionless transistor(GAA-JLT) have been analyzed and compared. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation.

Keywords: gate-inside junctionless transistor GI-JLT, gate-all-around junctionless transistor GAA-JLT, propagation delay, power delay product

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Authors: Naima Guenifi, Shiromani Balmukund Rahi, Amina Bechka

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Tunnel FET is one of the most suitable alternatives FET devices for conventional CMOS technology for low-power electronics and applications. Due to its lower subthreshold swing (SS) value, it is a strong follower of low power applications. It is a quantum FET device that follows the band to band (B2B) tunneling transport phenomena of charge carriers. Due to band to band tunneling, tunnel FET is suffering from a lower switching current than conventional metal-oxide-semiconductor field-effect transistor (MOSFET). For improvement of device features and limitations, the newly invented negative capacitance concept of ferroelectric material is implemented in conventional Tunnel FET structure popularly known as NC TFET. The present research work has implemented the idea of high-k gate dielectric added with ferroelectric material on double gate Tunnel FET for implementation of negative capacitance. It has been observed that the idea of negative capacitance further improves device features like SS value. It helps to reduce power dissipation and switching energy. An extensive investigation for circularity uses for digital, analog/RF and linearity features of double gate NCTFET have been adopted here for research work. Several essential designs paraments for analog/RF and linearity parameters like transconductance(gm), transconductance generation factor (gm/IDS), its high-order derivatives (gm2, gm3), cut-off frequency (fT), gain-bandwidth product (GBW), transconductance generation factor (gm/IDS) has been investigated for low power RF applications. The VIP₂, VIP₃, IMD₃, IIP₃, distortion characteristics (HD2, HD3), 1-dB, the compression point, delay and power delay product performance have also been thoroughly studied.

Keywords: analog/digital, ferroelectric, linearity, negative capacitance, Tunnel FET, transconductance

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Authors: Noha Al Majid, Said Mazer, Moulhime El Bekkali, Catherine Algani, Mahmoud Mehdi

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A low noise figure (NF) and high linearity V-band Low Noise Amplifier (LNA) is reported in this article. The LNA compromises a three-stage cascode configuration. This LNA will be used as a part of a WPAN (Wireless Personal Area Network) receiver in the millimeter-wave band at 60 GHz. It is designed according to the MMIC technology (Monolithic Microwave Integrated Circuit) in PH 15 process from UMS foundry and uses a 0.15 μm GaAs PHEMT (Pseudomorphic High Electron Mobility Transistor). The particularity of this LNA compared to other LNAs in literature is its very low noise figure which is equal to 1 dB and its high linearity (IIP3 is about 22 dB). The LNA consumes 0.24 Watts, achieving a high gain which is about 23 dB, an input return loss better than -10 dB and an output return loss better than -8 dB.

Keywords: low noise amplifier, V-band, MMIC technology, LNA, amplifier, cascode, pseudomorphic high electron mobility transistor (PHEMT), high linearity

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Authors: Dahi Ghareab Abdelsalam Ibrahim

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Calibration of step heights with high accuracy is needed for many applications in the industry. In general, step height consists of three bands: pass band, transition band (roll-off), and stop band. Abdelsalam used a convolution of the transfer functions of both Chebyshev type 2 and elliptic filters with WFF of the Fresnel transform in the frequency domain for producing a steeper roll-off with the removal of ripples in the pass band- and stop-bands. In this paper, we used a new method based on the Hamming window: band-pass filter for calibration of step heights in terms of perfect adjustment of pass-band, roll-off, and stop-band. The method is applied to calibrate a nominal step height of 40 cm. The step height is measured first by asynchronous dual-wavelength phase-shift interferometry. The measured step height is then calibrated by the simulation of the Hamming window: band-pass filter. The spectrum of the simulated band-pass filter is simulated at N = 881 and f0 = 0.24. We can conclude that the proposed method can calibrate any step height by adjusting only two factors which are N and f0.

Keywords: optical metrology, step heights, hamming window, band-pass filter

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Authors: Heung Sun Yoon, Jong Tae Kim

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In this paper, we present an activity diagram model for double-loop control self-adaptive braking system. Since activity diagram helps to improve visibility of self-adaption, we can easily find where improvement is needed on double-loop control. Double-loop control is adopted since the design conditions and actual conditions can be different. The system is reconfigured in runtime by using double-loop control. We simulated to verify and validate our model by using MATLAB. We compared single-loop control model with double-loop control model. Simulation results show that double-loop control provides more consistent brake power control than single-loop control.

Keywords: activity diagram, automotive, braking system, double-loop, self-adaptive, UML, vehicle

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Authors: Belloui Bouzid

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In this paper, broadband design of erbium doped fiber amplifier (EDFA) is demonstrated and proved experimentally. High and broad gain is covered in C and L bands. The used technique combines, in one configuration, two double passes with split band structure for the amplification of two traveled signals one for the C band and the other for L band. This new topology is to investigate the trends of high gain and wide amplification at different status of pumping power, input wavelength, and input signal power. The presented paper is to explore the performance of EDFA gain using what it can be called double pass double branch wide band amplification configuration. The obtained results show high gain and wide broadening range of 44.24 dB and 80 nm amplification respectively.

Keywords: erbium doped fiber amplifier, erbium doped fiber laser, optical amplification, fiber laser

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Authors: Nur Syarafina Binti Othman, Tsubasa Jindo, Makato Yamada, Miho Tsuyama, Hitoshi Nakano

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A novel method to produce a fast high voltage solid states switch using Insulated Gate Bipolar Transistors (IGBTs) is presented for discharge-pumped gas lasers. The IGBTs are connected in series to achieve a high voltage rating. An avalanche transistor is used as the gate driver. The fast pulse generated by the avalanche transistor quickly charges the large input capacitance of the IGBT, resulting in a switch out of a fast high-voltage pulse. The switching characteristic of fast-high voltage solid state switch has been estimated in the multi-stage series-connected IGBT with the applied voltage of several tens of kV. Electrical circuit diagram and the mythology of fast-high voltage solid state switch as well as experimental results obtained are presented.

Keywords: high voltage, IGBT, solid state switch, bipolar transistor

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Authors: Sang Hoon Lee, Tae Il Lee, Su Jeong Lee, Jae Min Myoung

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In order to manufacture short gap single Si nanowire (NW) field effect transistor (FET) by imprinting and transferring method, we introduce the method using Al2O3 sacrificial layer. The diameters of cylindrical Si NW addressed between Au electrodes by dielectrophoretic (DEP) alignment method are controlled to 106, 128, and 148 nm. After imprinting and transfer process, cylindrical Si NW is embedded in PVP adhesive and dielectric layer. By curing transferred cylindrical Si NW and Au electrodes on PVP-coated p++ Si substrate with 200nm-thick SiO2, 3μm gap Si NW FET fabrication was completed. As the diameter of embedded Si NW increases, the mobility of FET increases from 80.51 to 121.24 cm2/V•s and the threshold voltage moves from –7.17 to –2.44 V because the ratio of surface to volume gets reduced.

Keywords: Al2O3 sacrificial transfer layer, cylindrical silicon nanowires, dielectrophorestic alignment, field effect transistor

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Authors: Fajana Sola Isaac

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In the last two decades, we have witnessed an increased interest in exchange rate pass-through (ERPT) in developing economies and emerging markets. This is perhaps due to the acknowledged significance of the pattern of exchange rate pass-through as a key instrument in monetary policy design, principally in retort to a shock in exchange rate in literature. This paper analyzed Exchange Rate Pass-Through by A Model of Oil Prices and Asymmetric Exchange Rate Fluctuations in Selected African Countries. The study adopted A Non-Linear Autoregressive Distributed Lag approach using yearly data on Algeria, Burundi, Nigeria and South Africa from 1986 to 2022. The paper found asymmetry in exchange rate pass-through in net oil-importing and net oil-exporting countries in the short run during the period under review. An ERPT exhibited a complete pass-through in the short run in the case of net oil-importing countries but an incomplete pass-through in the case of the net oil-exporting countries that were examined. An extended result revealed a significant impact of oil price shock on exchange rate pass-through to domestic price in the long run only for net oil importing countries. The Wald restriction test also confirms the evidence of asymmetric with the role of oil price acting as an accelerator to exchange rate pass-through to domestic price in the countries examined. The study found the outcome to be very useful for gaining expansive knowledge on the external shock impact on ERPT and could be of critical value for national monetary policy decisions on inflation targeting, especially for countries examined and other developing net oil importers and exporters.

Keywords: pass through, exchange rate, ARDL, monetary policy

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Authors: Gichun Cha, Dongwan Lee, Junkyeong Kim, Aoqi Zhang, Seunghee Park

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All the world are studying the construction technology of double deck tunnel in order to respond to the increasing urban traffic demands and environmental changes. Advanced countries have the construction technology of the double deck tunnel structure. but the domestic country began research on it. Construction technologies are important. But Safety evaluation of structure is necessary to prevent possible accidents during construction. Thus, the double deck tunnel was required the shape management of middle slabs. The domestic country is preparing the construction of double deck tunnel for an alternate route and a pleasant urban environment. Shape management of double deck tunnel has been no research because it is a new attempted technology. The present, a similar study is bridge structure for the shape management. Bridge is implemented shape model using terrestrial laser scanning(TLS). Therefore, we proceed research on the bridge slabs because there is a similar structure of double deck tunnel. In the study, we develop shape management method of bridge slabs using TLS. We select the Test-bed for measurement site. This site is bridge located on Sungkyunkwan University Natural Sciences Campus. This bridge has a total length of 34m, the vertical height of 8.7m from the ground. It connects Engineering Building #1 and Engineering Building #2. Point cloud data for shape management is acquired the TLS and We utilized the Leica ScanStation C10/C5 model. We will confirm the Maximum displacement area of middle slabs using Least-Squares Fitting. We expect to raise stability for double deck tunnel through shape management for middle slabs.

Keywords: bridge slabs, least squares, safety evaluation, shape management method, terrestrial laser scanning

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Authors: Wang Jianguo, Ding Xiao, Liu Dong, Wang Haiping, Yang Yanhui, Hu Yang

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The hot deformation behavior of Inconel 718 alloy was studied by uniaxial compression tests under the deformation temperature of 940~1040℃ and strain rate of 0.001-10s⁻¹. The double cone compression (DCC) tests develop strains range from 30% to the 79% strain including all intermediate values of stains at different temperature (960~1040℃). DCC tests were simulated by finite element software which shown the strain and strain rates distribution. The result shows that the peak stress level of the alloy decreased with increasing deformation temperature and decreasing strain rate, which could be characterized by a Zener-Hollomon parameter in the hyperbolic-sine equation. The characterization method of hot processing window containing recrystallization volume fraction and average grain size was proposed for double cone compression test of uniform coarse grain, mixed crystal and uniform fine grain double conical specimen in hydraulic press and screw press. The results show that uniform microstructures can be obtained by low temperature with high deformation followed by high temperature with small deformation on the hydraulic press and low temperature, medium deformation, multi-pass on the screw press. The two methods were applied in industrial forgings process, and the forgings with uniform microstructure were obtained successfully.

Keywords: inconel 718 superalloy, hot processing windows, double cone compression, uniform microstructure

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Authors: Mohamed S. El-Asfoury, Ahmed Abdel-Moneim, Mohamed N. A. Nasr

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The current study uses finite element modeling to investigate and analyze a modified form of the from the conventional equal channel multi-angular pressing (ECMAP), using non-equal channels, on the workpiece material plastic deformation. The modified process non-equal channel multi-angular extrusion (NECMAE) is modeled using two-dimensional plane strain finite element model built using the commercial software ABAQUS. The workpiece material used is pure aluminum. The model was first validated by comparing its results to analytical solutions for single-pass equal channel angular extrusion (ECAP), as well as previously published data. After that, the model was used to examine the effects of different % of reductions of the area (for the second stage) on material plastic deformation, corner gap, and required the load. Three levels of reduction in the area were modeled; 10%, 30%, and 50%, and compared to single-pass and double-pass ECAP. Cases with a higher reduction in the area were found to have smaller corner gaps, higher and much uniform plastic deformation, as well as higher required loads. The current results are mainly attributed to the back pressure effects exerted by the second stage, as well as strain hardening effects experienced during the first stage.

Keywords: non-equal channel angular extrusion, multi-pass, sever plastic deformation, back pressure, Finite Element Modelling (FEM)

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Authors: J. K. Chawla, S. K. Jain, M. K. Mishra

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Ion-acoustic double layers have been studied in magnetized plasma. The modified Korteweg-de Vries (m-KdV) equation using reductive perturbation method is derived. It is found that for the selected set of parameters, the system supports rarefactive double layers depending upon the value of nonthermal parameters. It is also found that the magnetization affects only the width of the double layer. For a given set of parameter values, increases in the magnetization and the obliqueness angle (θ) between wave vector and magnetic field, affect the width of the double layers, however the amplitude of the double layers have no effect. An increase in the values of nonthermal parameter decreases the amplitude of the rarefactive double layer. The effect of the ion temperature ratio on the amplitude and width of the double layers are also discussed in detail.

Keywords: ion-acoustic double layers, magnetized electronegative plasma, reductive perturbation method, the modified Korteweg-de Vries (KdV) equation

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Authors: Hassane Ouazzani Chahdi, Omar Helli, Bourzgui Nour Eddine, Hassan Maher, Ali Soltani

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The real-time knowledge of the NO, NO₂ concentration at high temperature, would allow manufacturers of automobiles to meet the upcoming stringent EURO7 anti-pollution measures for diesel engines. Knowledge of the concentration of each of these species will also enable engines to run leaner (i.e., more fuel efficient) while still meeting the anti-pollution requirements. Our proposed technology is promising in the field of automotive sensors. It consists of nanostructured semiconductors based on gallium nitride and zirconia dioxide. The development of new technologies for selective detection of NO and NO₂ gas species would be a critical enabler of superior depollution. The current response was well correlated to the NO concentration in the range of 0–2000 ppm, 0-2500 ppm NO₂, and 0-300 ppm NH₃ at a temperature of 600.

Keywords: NOₓ sensors, HEMT transistor, anti-pollution, gallium nitride, gas sensor

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