Search results for: sapphire

Authors: Mengjun Zhang, Yuli Sun, Dunwen Zuo, Chunxiang Xie, Chunming Zhang

Abstract:

Experimental study on slicing of sapphire with fixed abrasive diamond wire saw was conducted in this paper. The process parameters were optimized through orthogonal experiment of three factors and four levels. The effects of wire speed, feed speed and tension pressure on the surface roughness were analyzed. Surface roughness in cutting direction and feed direction were both detected. The results show that feed speed plays the most significant role on the surface roughness of sliced sapphire followed by wire speed and tension pressure. The optimized process parameters are as follows: wire speed 1.9 m/s, feed speed 0.187 mm/min and tension pressure 0.18 MPa. In the end, the results were verified by analysis of variance.

Keywords: Fixed abrasive, diamond wire saw, slicing, sapphire, orthogonal experiment.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 3142

Authors: Takashi Ehara, Takayoshi Nakanishi, Kohei Sasaki, Marina Abe, Hiroshi Abe, Kiyoaki Abe, Ryo Iizaka, Takuya Sato

Abstract:

CuAlO₂ thin films are prepared on Si or sapphire substrate by sol-gel method using two kinds of sols. One is combination of Cu acetate and Al acetate basic, and the other is Cu nitrate and Al nitrate. In the case of acetate sol, XRD peaks of CuAlO₂ observed at annealing temperature of 800-950 ºC on both Si and sapphire substrates. In contrast, in the case of the films prepared using nitrate on Si substrate, XRD peaks of CuAlO₂ have been observed only at the annealing temperature of 800-850 ºC. At annealing temperature of 850ºC, peaks of other species have been observed beside the CuAlO₂ peaks, then, the CuAlO₂ peaks disappeared at annealing temperature of 900 °C with increasing in intensity of the other peaks. Intensity of the other peaks decreased at annealing temperature of 950 ºC with appearance of broad SiO₂ peak. In the present, we ascribe these peaks as metal silicide.

Keywords: CuAlO2, silicide, thin films, transparent conducting oxide, sol-gel.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1136

Authors: D. V. Sreekanth, M. Sreenivasa Rao

Abstract:

Abrasive jet machining is one of the promising non-traditional machining processes which uses mechanical energy (pressure and velocity) for machining various materials. The process parameters that influence the metal removal rate are kerfs, surface finish, depth of cut, air pressure, and distance between nozzle and work piece, nozzle diameter, abrasive type, abrasive shape, and mass flow rate of abrasive particles. The abrasive particles coming out with high pressure not only hits work surface but also passes through the nozzle resulting in erosion. This paper focuses mainly on the effect of different parameters on the erosion of nozzle in Abrasive jet machining. Three different types of nozzles made of sapphire, tungsten carbide, and high carbon high chromium steel (HCHCS) are used for machining glass and the erosion of these nozzles are calculated. The results are shown in tabular form and graphical representation.

Keywords: AJM, nozzle, sapphire, tungsten carbide, chrome steel.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1124

Authors: Seyed Ali Sedigh Zyabari, A. Zarifkar

Abstract:

Single photon detectors have been fabricated NbN nano wire. These detectors are fabricated from high quality, ultra high vacuum sputtered NbN thin films on a sapphire substrate. In this work a typical schematic of the nanowire Single Photon Detector structure and then driving and measurement electronic circuit are shown. The response of superconducting nanowire single photon detectors during a photo detection event, is modeled by a special electrical circuits (two circuit). Finally, current through the wire is calculated by solving equations of models.

Keywords: NbN, nanowire meander, superconducting single photon detector, kinetic inductance.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1493

Authors: Mahmoud Z. Iskandarani, Nidal F. Shilbayeh

Abstract:

The voltage/current characteristics and the effect of NO2 gas on the electrical conductivity of a PbPc gas sensor array is investigated. The gas sensor is manufactured using vacuum deposition of gold electrodes on sapphire substrate with the leadphathalocyanine vacuum sublimed on the top of the gold electrodes. Two versions of the PbPc gas sensor array are investigated. The tested types differ in the gap sizes between the deposited gold electrodes. The sensors are tested at different temperatures to account for conductivity changes as the molecular adsorption/desorption rate is affected by heat. The obtained results found to be encouraging as the sensors shoed stability and sensitivity towards low concentration of applied NO2 gas.

Keywords: Intelligent System, PbPc, Gas Sensor, Hardware, Software, Neural.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1568

Authors: Abbas Nasir, Xiong Zhang, Sohail Ahmad, Yiping Cui

Abstract:

Non-polar a-plane AlGaN epilayers of high structural quality have been grown on r-sapphire substrate by using metalorganic chemical vapor deposition (MOCVD). A graded non-polar AlGaN buffer layer with variable aluminium concentration was used to improve the structural quality of the non-polar a-plane AlGaN epilayer. The characterisations were carried out by high-resolution X-ray diffraction (HR-XRD), atomic force microscopy (AFM) and Hall effect measurement. The XRD and AFM results demonstrate that the Al-composition-graded non-polar AlGaN buffer layer significantly improved the crystalline quality and the surface morphology of the top layer. A low root mean square roughness 1.52 nm is obtained from AFM, and relatively low background carrier concentration down to 3.9×  cm^-3 is obtained from Hall effect measurement.

Keywords: Non-polar AlGaN epilayer, Al composition-graded AlGaN layer, root mean square, background carrier concentration.

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 515

Authors: N.S. Pradhan, S.K. Dubey, A. D.Yadav, Arvind Singh, D.C. Kothari

Abstract:

Un-doped GaN film of thickness 1.90 mm, grown on sapphire substrate were uniformly implanted with 325 keV Mn+ ions for various fluences varying from 1.75 x 1015 - 2.0 x 1016 ions cm-2 at 3500 C substrate temperature. The structural, morphological and magnetic properties of Mn ion implanted gallium nitride samples were studied using XRD, AFM and SQUID techniques. XRD of the sample implanted with various ion fluences showed the presence of different magnetic phases of Ga3Mn, Ga0.6Mn0.4 and Mn4N. However, the compositions of these phases were found to be depended on the ion fluence. AFM images of non-implanted sample showed micrograph with rms surface roughness 2.17 nm. Whereas samples implanted with the various fluences showed the presence of nano clusters on the surface of GaN. The shape, size and density of the clusters were found to vary with respect to ion fluence. Magnetic moment versus applied field curves of the samples implanted with various fluences exhibit the hysteresis loops. The Curie temperature estimated from zero field cooled and field cooled curves for the samples implanted with the fluence of 1.75 x 1015, 1.5 x 1016 and 2.0 x 1016 ions cm-2 was found to be 309 K, 342 K and 350 K respectively.

Keywords: GaN, Ion implantation, XRD, AFM, SQUID

Procedia APA BibTeX Chicago EndNote Harvard JSON MLA RIS XML ISO 690 PDF Downloads 1935