Search results for: p-n junction semiconductor
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 572

Search results for: p-n junction semiconductor

332 The Development Status of Terahertz Wave and Its Prospect in Wireless Communication

Authors: Yiquan Liao, Quanhong Jiang

Abstract:

Since terahertz was observed by German scientists, we have obtained terahertz through different generation technologies of broadband and narrowband. Then, with the development of semiconductor and other technologies, the imaging technology of terahertz has become increasingly perfect. From the earliest application of nondestructive testing in aviation to the present application of information transmission and human safety detection, the role of terahertz will shine in various fields. The weapons produced by terahertz were epoch-making, which is a crushing deterrent against technologically backward countries. At the same time, terahertz technology in the fields of imaging, medical and livelihood, communication and communication are for the well-being of the country and the people.

Keywords: terahertz, imaging, communication, medical treatment

Procedia PDF Downloads 65
331 Synthesis, Characterization and Photocatalytic Applications of Ag-Doped-SnO₂ Nanoparticles by Sol-Gel Method

Authors: M. S. Abd El-Sadek, M. A. Omar, Gharib M. Taha

Abstract:

In recent years, photocatalytic degradation of various kinds of organic and inorganic pollutants using semiconductor powders as photocatalysts has been extensively studied. Owing to its relatively high photocatalytic activity, biological and chemical stability, low cost, nonpoisonous and long stable life, Tin oxide materials have been widely used as catalysts in chemical reactions, including synthesis of vinyl ketone, oxidation of methanol and so on. Tin oxide (SnO₂), with a rutile-type crystalline structure, is an n-type wide band gap (3.6 eV) semiconductor that presents a proper combination of chemical, electronic and optical properties that make it advantageous in several applications. In the present work, SnO₂ nanoparticles were synthesized at room temperature by the sol-gel process and thermohydrolysis of SnCl₂ in isopropanol by controlling the crystallite size through calculations. The synthesized nanoparticles were identified by using XRD analysis, TEM, FT-IR, and Uv-Visible spectroscopic techniques. The crystalline structure and grain size of the synthesized samples were analyzed by X-Ray diffraction analysis (XRD) and the XRD patterns confirmed the presence of tetragonal phase SnO₂. In this study, Methylene blue degradation was tested by using SnO₂ nanoparticles (at different calculations temperatures) as a photocatalyst under sunlight as a source of irradiation. The results showed that the highest percentage of degradation of Methylene blue dye was obtained by using SnO₂ photocatalyst at calculations temperature 800 ᵒC. The operational parameters were investigated to be optimized to the best conditions which result in complete removal of organic pollutants from aqueous solution. It was found that the degradation of dyes depends on several parameters such as irradiation time, initial dye concentration, the dose of the catalyst and the presence of metals such as silver as a dopant and its concentration. Percent degradation was increased with irradiation time. The degradation efficiency decreased as the initial concentration of the dye increased. The degradation efficiency increased as the dose of the catalyst increased to a certain level and by further increasing the SnO₂ photocatalyst dose, the degradation efficiency is decreased. The best degradation efficiency on which obtained from pure SnO₂ compared with SnO₂ which doped by different percentage of Ag.

Keywords: SnO₂ nanoparticles, a sol-gel method, photocatalytic applications, methylene blue, degradation efficiency

Procedia PDF Downloads 127
330 Investigation of Length Effect on Power Conversion Efficiency of Perovskite Solar Cells Composed of ZnO Nanowires

Authors: W. S. Li, S. T. Yang, H. C. Cheng

Abstract:

The power conversion efficiency (PCE) of the perovskite solar cells has been achieved by inserting vertically-aligned ZnO nanowires (NWs) between the cathode and the active layer and shows better solar cells performance. Perovskite solar cells have drawn significant attention due to the superb efficiency and low-cost fabrication process. In this experiment, ZnO nanowires are used as the electron transport layer (ETL) due to its low temperature process. The main idea of this thesis is utilizing the 3D structures of the hydrothermally-grown ZnO nanowires to increase the junction area to improve the photovoltaic performance of the perovskite solar cells. The infiltration and the surface coverage of the perovskite precursor solution changed as tuning the length of the ZnO nanowires. It is revealed that the devices with ZnO nanowires of 150 nm demonstrated the best PCE of 8.46 % under the AM 1.5G illumination (100 mW/cm2).

Keywords: hydrothermally-grown ZnO nanowires, perovskite solar cells, low temperature process, pinholes

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329 Influence of Temperature on Properties of MOSFETs

Authors: Azizi Cherifa, O. Benzaoui

Abstract:

The thermal aspects in the design of power circuits often deserve as much attention as pure electric components aspects as the operating temperature has a direct influence on their static and dynamic characteristics. MOSFET is fundamental in the circuits, it is the most widely used device in the current production of semiconductor components using their honorable performance. The aim of this contribution is devoted to the effect of the temperature on the properties of MOSFETs. The study enables us to calculate the drain current as function of bias in both linear and saturated modes. The effect of temperature is evaluated using a numerical simulation, using the laws of mobility and saturation velocity of carriers as a function of temperature.

Keywords: temperature, MOSFET, mobility, transistor

Procedia PDF Downloads 326
328 Structural, Optical and Electrical Properties of MnxZnO1-X Nanocrystals Synthesized by Sol-Gel Method

Authors: K. C. Gayithri, S. K. Naveen Kumar

Abstract:

ZnO is one of the most important semiconductor materials, non toxic, biocompatible, antibacterial properties for research and it is used in many biomedical applications. MnxZn1-xO nano thin films were prepared by a spin coating sol-gel method on silicon substrate. The structural, optical, electrical properties of Mn Doped ZnO are studied by using X-rd, FESEM, UV-Visible spectrophotometer. The X-rd reveals that the sample shows hexagonal wurtzits structure. Surface morphology and thickness of the sample are characterized by field emission scanning electron microscopy. Absorption and transmission spectra are studied by UV-Visible spectrophotometer. The electrical properties are measured by TCR meter.

Keywords: transition metals, Mn doped ZnO, Sol-gel, x-ray diffraction

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327 Atomistic Study of Structural and Phases Transition of TmAs Semiconductor, Using the FPLMTO Method

Authors: Rekab Djabri Hamza, Daoud Salah

Abstract:

We report first-principles calculations of structural and magnetic properties of TmAs compound in zinc blende(B3) and CsCl(B2), structures employing the density functional theory (DFT) within the local density approximation (LDA). We use the full potential linear muffin-tin orbitals (FP-LMTO) as implemented in the LMTART-MINDLAB code (Calculation). Results are given for lattice parameters (a), bulk modulus (B), and its first derivatives(B’) in the different structures NaCl (B1) and CsCl (B2). The most important result in this work is the prediction of the possibility of transition; from cubic rocksalt (NaCl)→ CsCl (B2) (32.96GPa) for TmAs. These results use the LDA approximation.

Keywords: LDA, phase transition, properties, DFT

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326 Calculation Of Energy Gap Of (Ga,Mn)As Diluted Magnetic Semiconductor From The Eight-Band k.p Model

Authors: Khawlh A. Alzubaidi, Khadijah B. Alziyadi, Amor M. Alsayari

Abstract:

Now a days (Ga, Mn) is one of the most extensively studied and best understood diluted magnetic semiconductors. Also, the study of (Ga, Mn)As is a fervent research area since it allows to explore of a variety of novel functionalities and spintronics concepts that could be implemented in the future. In this work, we will calculate the energy gap of (Ga, Mn)As using the eight-band model. In the Hamiltonian, the effects of spin-orbit, spin-splitting, and strain will be considered. The dependence of the energy gap on Mn content, and the effect of the strain, which is varied continuously from tensile to compressive, will be studied. Finally, analytical expressions for the (Ga, Mn)As energy band gap, taking into account both parameters (Mn concentration and strain), will be provided.

Keywords: energy gap, diluted magnetic semiconductors, k.p method, strain

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325 Photo-Thermal Degradation Analysis of Single Junction Amorphous Silicon Solar Module Eva Encapsulation

Authors: Gilbert O. Osayemwenre, Meyer L. Edson

Abstract:

Ethylene vinyl acetate (EVA) encapsulation degradation affects the performance of photovoltaic (PV) module. Hotspot formation causes the EVA encapsulation to undergo photothermal deterioration and molecular breakdown by UV radiation. This leads to diffusion of chemical particles into other layers. During outdoor deployment, the EVA encapsulation in the affect region loses its adhesive strength, when this happen the affected region layer undergoes rapid delamination. The presence of photo-thermal degradation is detrimental to PV modules as it causes both optical and thermal degradation. Also, it enables the encapsulant to be more susceptible to chemicals substance and moisture. Our findings show a high concentration of Sodium, Phosphorus and Aluminium which originate from the glass substrate, cell emitter and back contact respectively.

Keywords: ethylene vinyl acetate (EVA), encapsulation, photo-thermal degradation, thermogravimetric analysis (TGA), scanning probe microscope (SPM)

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324 Gas Sensor Based on Carbon Nanotubes: A Review

Authors: Brian Yuliarto, Ni Luh Wulan Septiani

Abstract:

Carbon nanotubes are one of the carbon nanomaterial that very popular in the field of gas sensors. It has unique properties, large surface area and has hollow structure that makes its potentially used as a gas sensor. Several attempts have been made to improve the sensitivity and selectivity of CNTs by modifying CNTs with a noble metals, metal oxides and polymers. From these studies, there are evidents that modification of CNTs with these materials can improve the sensitivity and selectivity of CNTs against some harmful gases. Decorating carbon nano tubes with metal oxides improve CNTs with the highest sensitivity and increased sensitivity of polymer/CNTs is higher than the metal/CNTs. The used of metal in CNTs aims to accelerate the reaction surface and as channel for electrons path from or to the CNTs. The used of metal oxides on CNTs built a p-n junction that can increase sensitivity. While the addition of polymer can increase the charge carriers density in CNTs.

Keywords: carbon nanotubes, gas sensors, modification of CNT, sensitivity

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323 Synthesis of AgInS2–ZnS at Low Temperature with Tunable Photoluminescence for Photovoltaic Applications

Authors: Nitu Chhikaraa, S. B. Tyagia, Kiran Jainb, Mamta Kharkwala

Abstract:

The I–III–VI2 semiconductor Nanocrystals such as AgInS2 have great interest for various applications such as optical devices (solar cell and LED), cellular Imaging and bio tagging etc. we synthesized the phase and shape controlled chalcopyrite AgInS2 (AIS) colloidal nanoparticles by thermal decomposition of metal xanthate at low temperature in an organic solvent’s containing surfactant molecules. Here we are focusing on enhancements of photoluminescence of AgInS2 Nps by coating of ZnS at low temperature for application of optical devices. The size of core shell Nps was less than 50nm.by increasing the time and temperature the emission of the wavelength of the Zn coated AgInS2 Nps could be adjusted from visible region to IR the QY of the AgInS2 Nps could be increased by coating of ZnS from 20 to 80% which was reasonably good as compared to those of the previously reported. The synthesized NPs were characterized by PL, UV, XRD and TEM.

Keywords: PL, UV, XRD, TEM

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322 Fabrication of Graphene Oxide Based Planar Hetero-Junction Perovskite Solar Cells

Authors: Khursheed Ahmad, Shaikh M. Mobin

Abstract:

In this work, we have developed a highly stable planar heterojunction perovskite solar cells (PSCs) with a architecture (ITO/GO/PEDOT:PSS/MAPbI3/PCBM/Carbon tape). The PSCs was fabricated under air using GO/PEDOT:PSS as hole transport layer while the carbon tape used as a back contact to complete the device. The fabricated PSCs device exhibited good stability and performance in terms of power conversion efficiency of 5.2%. The PSCs devices were exposed to ambient condition for 4 days which shows excellent stability confirmed by XRD analysis. We believed that the stability of the planar heterojunction perovskite solar cell may be due the presence of GO which inhibits the direct contact between PEDOT:PSS and MAPbI3.

Keywords: graphene oxide, perovskite solar cells, hole transport layer, PEDOT:PSS

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321 Studying the Effect of Silicon Substrate Intrinsic Carrier Concentration on Performance of ZnO/Si Solar Cells

Authors: Syed Sadique Anwer Askari, Mukul Kumar Das

Abstract:

Zinc Oxide (ZnO) solar cells have drawn great attention due to the enhanced efficiency and low-cost fabrication process. In this study, ZnO thin film is used as the active layer, hole blocking layer, antireflection coating (ARC) as well as transparent conductive oxide. To improve the conductivity of ZnO, top layer of ZnO is doped with aluminum, for top contact. Intrinsic carrier concentration of silicon substrate plays an important role in enhancing the power conversion efficiency (PCE) of ZnO/Si solar cell. With the increase of intrinsic carrier concentration PCE decreased due to increase in dark current in solar cell. At 80nm ZnO and 160µm Silicon substrate thickness, power conversion efficiency of 26.45% and 21.64% is achieved with intrinsic carrier concentration of 1x109/cm3, 1.4x1010/cm3 respectively.

Keywords: hetero-junction solar cell, solar cell, substrate intrinsic carrier concentration, ZnO/Si

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320 Climate Impact-Minimizing Road Infrastructure Layout for Growing Cities

Authors: Stanislovas Buteliauskas, Aušrius Juozapavičius

Abstract:

City road transport contributes significantly to climate change, and the ongoing world urbanization is only increasing the problem. The paper describes a city planning concept minimizing the number of vehicles on the roads while increasing overall mobility. This becomes possible by utilizing a recently invented two-level road junction with a unique property of serving both as an intersection of uninterrupted traffic and an easily accessible transport hub capable of accumulating private vehicles, and therefore becoming an especially effective park-and-ride solution, and a logistics or business center. Optimized layouts of city road infrastructure, living and work areas, and major roads are presented. The layouts are suitable both for the development of new cities as well as for the expansion of existing ones. Costs of the infrastructure and a positive impact on climate are evaluated in comparison to current city growth patterns.

Keywords: congestion, city infrastructure, park-and-ride, road junctions

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319 Vertically Grown P–Type ZnO Nanorod on Ag Thin Film

Authors: Jihyun Park, Tae Il Lee, Jae-Min Myoung

Abstract:

A Silver (Ag) thin film is introduced as a template and doping source for vertically aligned p–type ZnO nanorods. ZnO nanorods were grown using a ammonium hydroxide based hydrothermal process. During the hydrothermal process, the Ag thin film was dissolved to generate Ag ions in the solution. The Ag ions can contribute to doping in the wurzite structure of ZnO and the (111) grain of Ag thin film can be the epitaxial temporal template for the (0001) plane of ZnO. Hence, Ag–doped p–type ZnO nanorods were successfully grown on the substrate, which can be an electrode or semiconductor for the device application. To demonstrate the potentials of this idea, p–n diode was fabricated and its electrical characteristics were demonstrated.

Keywords: hydrothermal process, Ag–doped ZnO nanorods, p–type ZnO

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318 Simulation Study of a Fault at the Switch on the Operation of the Doubly Fed Induction Generator Based on the Wind Turbine

Authors: N. Zerzouri, N. Benalia, N. Bensiali

Abstract:

This work is devoted to an analysis of the operation of a doubly fed induction generator (DFIG) integrated with a wind system. The power transfer between the stator and the network is carried out by acting on the rotor via a bidirectional signal converter. The analysis is devoted to the study of a fault in the converter due to an interruption of the control of a semiconductor. Simulation results obtained by the MATLAB / Simulink software illustrate the quality of the power generated at the default.

Keywords: doubly fed induction generator (DFIG), wind power generation, back to back PWM converter, default switching

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317 Fabrication and Analysis of Vertical Double-Diffused Metal Oxide Semiconductor (VDMOS)

Authors: Deepika Sharma, Bal Krishan

Abstract:

In this paper, the structure of N-channel VDMOS was designed and analyzed using Silvaco TCAD tools by varying N+ source doping concentration, P-Body doping concentration, gate oxide thickness and the diffuse time. VDMOS is considered to be ideal power switches due to its high input impedance and fast switching speed. The performance of the device was analyzed from the Ids vs Vgs curve. The electrical characteristics such as threshold voltage, gate oxide thickness and breakdown voltage for the proposed device structures were extarcted. Effect of epitaxial layer on various parameters is also observed.

Keywords: on-resistance, threshold voltage, epitaxial layer, breakdown voltage

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316 Performance Evaluation of Al Jame’s Roundabout Using SIDRA

Authors: D. Muley, H. S. Al-Mandhari

Abstract:

This paper evaluates the performance of a multi-lane four-legged modern roundabout operating in Muscat using SIDRA model. The performance measures include Degree of Saturation (DOS), average delay, and queue lengths. The geometric and traffic data were used for model preparation. Gap acceptance parameters, critical gap, and follow-up headway were used for calibration of SIDRA model. The results from the analysis showed that currently the roundabout is experiencing delays up to 610 seconds with DOS 1.67 during peak hour. Further, sensitivity analysis for general and roundabout parameters was performed, amongst lane width, cruise speed, inscribed diameter, entry radius, and entry angle showed that inscribed diameter is the most crucial factor affecting delay and DOS. Upgradation of the roundabout to the fully signalized junction was found as the suitable solution which will serve for future years with LOS C for design year having DOS of 0.9 with average control delay of 51.9 seconds per vehicle.

Keywords: performance analysis, roundabout, sensitivity analysis, SIDRA

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315 Simulation of High Performance Nanoscale Partially Depleted SOI n-MOSFET Transistors

Authors: Fatima Zohra Rahou, A. Guen Bouazza, B. Bouazza

Abstract:

Invention of transistor is the foundation of electronics industry. Metal Oxide Semiconductor Field Effect Transistor (MOSFET) has been the key for the development of nanoelectronics technology. In the first part of this manuscript, we present a new generation of MOSFET transistors based on SOI (Silicon-On-Insulator) technology. It is a partially depleted Silicon-On-Insulator (PD SOI MOSFET) transistor simulated by using SILVACO software. This work was completed by the presentation of some results concerning the influence of parameters variation (channel length L and gate oxide thickness Tox) on our PDSOI n-MOSFET structure on its drain current and kink effect.

Keywords: SOI technology, PDSOI MOSFET, FDSOI MOSFET, kink effect

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314 A Non-Iterative Shape Reconstruction of an Interface from Boundary Measurement

Authors: Mourad Hrizi

Abstract:

In this paper, we study the inverse problem of reconstructing an interior interface D appearing in the elliptic partial differential equation: Δu+χ(D)u=0 from the knowledge of the boundary measurements. This problem arises from a semiconductor transistor model. We propose a new shape reconstruction procedure that is based on the Kohn-Vogelius formulation and the topological sensitivity method. The inverse problem is formulated as a topology optimization one. A topological sensitivity analysis is derived from a function. The unknown subdomain D is reconstructed using a level-set curve of the topological gradient. Finally, we give several examples to show the viability of our proposed method.

Keywords: inverse problem, topological optimization, topological gradient, Kohn-Vogelius formulation

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313 The Effect of Compensating Filter on Image Quality in Lateral Projection of Thoracolumbar Radiography

Authors: Noor Arda Adrina Daud, Mohd Hanafi Ali

Abstract:

The compensating filter is placed between the patient and X-ray tube to compensate various density and thickness of human body. The main purpose of this project is to study the effect of compensating filter on image quality in lateral projection of thoracolumbar radiography. The study was performed by an X-ray unit where different thicknesses of aluminum were used as compensating filter. Specifically the relationship between thickness of aluminum, density and noise were evaluated. Results show different thickness of aluminum compensating filter improved the image quality of lateral projection thoracolumbar radiography. The compensating filter of 8.2 mm was considered as the optimal filter to compensate the thoracolumbar junction (T12-L1), 1 mm to compensate lumbar region and 5.9 mm to compensate thorax region. The aluminum wedge compensating filter was designed resulting in an acceptable image quality.

Keywords: compensating filter, aluminum, image quality, lateral, thoracolumbar

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312 Structural and Magnetic Properties of Undoped and Ni Doped CdZnS

Authors: Sabit Horoz, Ahmet Ekicibil, Omer Sahin, M. Akyol

Abstract:

In this study, CdZnS and Ni-doped CdZnS quantum dots(QDs) were prepared by the wet-chemical method at room temperature using mercaptoethanol as a capping agent. The structural and magnetic properties of the CdZnS and CdZnS doped with different concentrations of Ni QDs were examined by XRD and magnetic susceptibility measurements, respectively. The average particles size of cubic QDs obtained by full-width half maxima (FWHM) analysis, increases with increasing doping concentrations. The investigation of the magnetic properties showed that the Ni-doped samples exhibit signs of ferromagnetism, on the other hand, un-doped CdZnS is diamagnetic.

Keywords: un-doped and Ni doped CdZnS Quantum Dots (QDs), co-precipitation method, structural and optical properties of QDs, diluted magnetic semiconductor materials (DMSMs)

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311 Some Fundamental Physical Properties of BiGaO₃ Cubic Perovskite

Authors: B. Gueridi, T. Chihi, M. Fatmi, A. Faci

Abstract:

Some fundamental physical properties of BiGaO₃ were investigated under pressure and temperature effect using generalized gradient approximation and local density approximation approaches. The effect of orientation on Debye temperature and sound waves velocities were estimated from elastic constants. The value of the bulk modulus of BiGaO₃ is a sign of its high hardness because it is linked to an isotropic deformation. BiGaO₃ is a semiconductor and ductile material with covalent bonding (Ga–O), and the Bi-O bonding is ionic. The optical transitions were observed when electrons pass from the top of the valence band (O-2p) to the bottom of the conduction band (Ga-4p or Bi-6p). The thermodynamic parameters are determined in temperature and pressure ranging from 0 to 1800 K and 0 to 50 GPa.

Keywords: BiGaO₃ perovskite, optical absorption, first principle, band structure

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310 C4H6 Adsorption on the Surface of A BN Nanotube: A DFT Studies

Authors: Maziar Noei

Abstract:

Adsorption of a boron nitride nanotube (BNNT) was examined toward ethylacetylene (C4H6) molecule by using density functional theory (DFT) calculations at the B3LYP/6-31G (d) level, and it was found that the adsorption energy (Ead) of ethylacetylene the pristine nanotubes is about -1.60kcal/mol. But when nanotube have been doped with Si and Al atomes, the adsorption energy of ethylacetylene molecule was increased. Calculation showed that when the nanotube is doping by Al, the adsorption energy is about -24.19kcal/mol and also the amount of HOMO/LUMO energy gap (Eg) will reduce significantly. Boron nitride nanotube is a suitable adsorbent for ethylacetylene and can be used in separation processes ethylacetylene. It is seem that nanotube (BNNT) is a suitable semiconductor after doping, and the doped BNNT in the presence of ethylacetylene an electrical signal is generating directly and therefore can potentially be used for ethylacetylene sensors.

Keywords: sensor, nanotube, DFT, ethylacetylene

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309 The Effects of Geographical and Functional Diversity of Collaborators on Quality of Knowledge Generated

Authors: Ajay Das, Sandip Basu

Abstract:

Introduction: There is increasing recognition that diverse streams of knowledge can often be recombined in novel ways to generate new knowledge. However, knowledge recombination theory has not been applied to examine the effects of collaborator diversity on the quality of knowledge such collaborators produce. This is surprising because one would expect that a collaborative team with certain aspects of diversity should be able to recombine process elements related to knowledge development, which are relatively tacit, but also complementary because of the collaborator’s varying backgrounds. Theory and Hypotheses: We propose to examine two aspects of diversity in the environments of collaborative teams to try and capture such potential recombinations of relatively tacit, process knowledge. The first aspect of diversity in team members’ environments is geographical. Collaborators with more geographical distance between them (perhaps working in different countries) often have more autonomy in the processes they adopt for knowledge development. In the absence of overt monitoring, such collaborators are likely to adopt differing approaches to knowledge development. The sharing of such varying approaches among collaborators is likely to result in greater quality of the common collaborative pursuit. The second aspect is diversity in the work backgrounds of team members. Such diversity can also increase the potential for knowledge recombination. For example, if one or more members are from a manufacturing center (versus all of them being from a purely R&D center), such members will provide unique perspectives on the implementation of innovative ideas. Again, knowledge that has been evaluated from these diverse perspectives is likely to be of a higher quality. In addition to the above aspects of environmental diversity among team members, we also plan to examine the extent to which individual collaborators are in different environments from the primary innovation center of their employing firms. Proposed Methods: We will test our model on a sample of firms in the semiconductor industry. Our level of analysis will be individual patents generated by these firms and the teams involved in the generation of these. Information on manufacturing activities of our sample firms will be obtained from SEMI, a proprietary database of the semiconductor industry, as well as company 10-K reports. Conclusion: We believe that our results will represent a preliminary attempt to understand how various forms of diversity in collaborative teams impact the knowledge development process. Our dependent variable of knowledge quality is important to study since higher values of this variable can not only drive firm performance but the broader development of regions and societies through spillover impacts on future innovation. The results of this study will, therefore, inform future research and practice in innovation, geographical location, and vertical integration.

Keywords: innovation, manufacturing strategy, knowledge, diversity

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308 First Principle study of Electronic Structure of Silicene Doped with Galium

Authors: Mauludi Ariesto Pamungkas, Wafa Maftuhin

Abstract:

Gallium with three outer electrons commonly are used as dopants of silicon to make it P type and N type semiconductor respectively. Silicene, one-atom-thick silicon layer is one of emerging two dimension materials after the success of graphene. The effects of Gallium doping on electronic structure of silicine are investigated by using first principle calculation based on Density Functional Theory (DFT) calculation and norm conserving pseudopotential method implemented in ABINIT code. Bandstructure of Pristine silicene is similar to that of graphene. Effect of Ga doping on bandstructure of silicene depend on the position of Ga adatom on silicene

Keywords: silicene, effects of Gallium doping, Density Functional Theory (DFT), graphene

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307 AG Loaded WO3 Nanoplates for Photocatalytic Degradation of Sulfanilamide and Bacterial Removal under Visible Light

Authors: W. Y. Zhu, X. L. Yan, Y. Zhou

Abstract:

Sulfonamides (SAs) are extensively used antibiotics; photocatalysis is an effective, way to remove the SAs from water driven by solar energy. Here we used WO3 nanoplates and their Ag heterogeneous as photocatalysts to investigate their photodegradation efficiency against sulfanilamide (SAM) which is the precursor of SAs. Results showed that WO3/Ag composites performed much better than pure WO3 where the highest removal rate was 96.2% can be achieved under visible light irradiation. Ag as excellent antibacterial agent also endows certain antibacterial efficiency to WO3, and 100% removal efficiency could be achieved in 2 h under visible light irradiation for all WO3/Ag composites. Generally, WO3/Ag composites are very effective photocatalysts with potentials in practical applications which mainly use cheap, clean and green solar energy as energy source.

Keywords: antibacterial, photocatalysis, semiconductor, sulfanilamide

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306 Design and Study of a Low Power High Speed Full Adder Using GDI Multiplexer

Authors: Biswarup Mukherjee, Aniruddha Ghosal

Abstract:

In this paper, we propose a new technique for implementing a low power full adder using a set of GDI multiplexers. Full adder circuits are used comprehensively in Application Specific Integrated Circuits (ASICs). Thus it is desirable to have low power operation for the sub components. The explored method of implementation achieves a low power design for the full adder. Simulated results using state-of-art Tanner tool indicates the superior performance of the proposed technique over conventional CMOS full adder. Detailed comparison of simulated results for the conventional and present method of implementation is presented.

Keywords: low power full adder, 2-T GDI MUX, ASIC (application specific integrated circuit), 12-T FA, CMOS (complementary metal oxide semiconductor)

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305 Solar Cell Using Chemical Bath Deposited PbS:Bi3+ Films as Electron Collecting Layer

Authors: Melissa Chavez Portillo, Mauricio Pacio Castillo, Hector Juarez Santiesteban, Oscar Portillo Moreno

Abstract:

Chemical bath deposited PbS:Bi3+ as an electron collection layer is introduced between the silicon wafer and the Ag electrode the performance of the PbS heterojunction thin film solar thin film solar cells with 1 cm2 active area. We employed Bi-doping to transform it into an n-type semiconductor. The experimental results reveal that the cell response parameters depend critically on the deposition procedures in terms of bath temperature, deposition time. The device achieves an open-circuit voltage of 0.4 V. The simple and low-cost deposition method of PbS:Bi3+ films is promising for the fabrication.

Keywords: Bi doping, PbS, thin films, solar cell

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304 Easy Method of Synthesis and Functionalzation of Zno Nanoparticules With 3 Aminopropylthrimethoxysilane (APTES)

Authors: Haythem Barrak, Gaetan Laroche, Adel M’nif, Ahmed Hichem Hamzaoui

Abstract:

The use of semiconductor oxides, as chemical or biological, requires their functionalization with appropriate dependent molecules of the substance to be detected. generally, the support materials used are TiO2 and SiO2. In the present work, we used zinc oxide (ZnO) known for its interesting physical properties. The synthesis of nano scale ZnO was performed by co-precipitation at low temperature (60 ° C).To our knowledge, the obtaining of this material at this temperature was carried out for the first time. This shows the low cost of this operation. On the other hand, the surface functionalization of ZnO was performed with (3-aminopropyl) triethoxysilane (APTES) by using a specific method using ethanol for the first time. In addition, the duration of this stage is very low compared to literature. The samples obtained were analyzed by XRD, TEM, DLS, FTIR, and TGA shows that XPS that the operation of grafting of APTES on our support was carried out with success.

Keywords: functionalization, nanoparticle, ZnO, APTES, caractérisation

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303 Synthesis, Characterization and Gas Sensing Applications of Perovskite CaZrO3 Nanoparticles

Authors: B. M. Patil

Abstract:

Calcium Zirconate (CaZrO3) has high protonic conductivities at elevated temperature in water or hydrogen atmosphere. Undoped calcium zirconate acts as a p-type semiconductor in air. In this paper, we reported synthesis of CaZrO3 nanoparticles via modified molecular precursor method. The precursor calcium zirconium oxalate (CZO) was synthesized by exchange reaction between freshly generated aqueous solution of sodium zirconyl oxalate and calcium acetate at room temperature. The controlled pyrolysis of CZO in air at 700°C for one hour resulted in the formation nanocrystalline CaZrO3 powder. CaZrO3 obtained by the present method was characterized by Simultaneous thermogravimetry and differential thermogravimetry (TG-DTA), X-ray diffraction (XRD), infra-red spectroscopy and transmission electron microscopy (TEM). The pellets of synthesized CaZrO3 fabricated, sintered at 1000°C for 5 hr and tested as sensors for NO2 and NH3 gases.

Keywords: CaZrO3, CZO, NO2, NH3

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