Search results for: diodes
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 127

Search results for: diodes

97 Double Gaussian Distribution of Nonhomogeneous Barrier Height in Metal/n-type GaN Schottky Contacts

Authors: M. Mamor

Abstract:

GaN-based compounds have attracted much interest in the fabrication of high-power, high speed and high-frequency electronic devices. Other examples of GaN-based applications are blue and ultraviolet (UV) light-emitting diodes (LEDs). All these devices require high-quality ohmic and Schottky contacts. Gaining an understanding of the electrical characteristics of metal/GaN contacts is of fundamental and technological importance for developing GaN-based devices. In this work, the barrier characteristics of Pt and Pd Schottky contacts on n-type GaN were studied using temperature-dependent forward current-voltage (I-V) measurements over a wide temperature range 80–400 K. Our results show that the barrier height and ideality factor, extracted from the forward I-V characteristics based on thermionic emission (TE) model, exhibit an abnormal dependence with temperature; i.e., by increasing temperature, the barrier height increases whereas the ideality factor decreases. This abnormal behavior has been explained based on the TE model by considering the presence of double Gaussian distribution (GD) of nonhomogeneous barrier height at the metal/GaN interface. However, in the high-temperature range (160-400 K), the extracted value for the effective Richardson constant A* based on the barrier inhomogeneity (BHi) model is found in fair agreement with the theoretically predicted value of about 26.9 A.cm-2 K-2 for n-type GaN. This result indicates that in this temperature range, the conduction current transport is dominated by the thermionic emission mode. On the other hand, in the lower temperature range (80-160 K), the corresponding effective Richardson constant value according to the BHi model is lower than the theoretical value, suggesting the presence of other current transport, such as tunneling-assisted mode at lower temperatures.

Keywords: Schottky diodes, inhomogeneous barrier height, GaN semiconductors, Schottky barrier heights

Procedia PDF Downloads 25
96 Nighttime Power Generation Using Thermoelectric Devices

Authors: Abdulrahman Alajlan

Abstract:

While the sun serves as a robust energy source, the frigid conditions of outer space present promising prospects for nocturnal power generation due to its continuous accessibility during nighttime hours. This investigation illustrates a proficient methodology facilitating uninterrupted energy capture throughout the day. This method involves the utilization of water-based heat storage systems and radiative thermal emitters implemented across thermometric devices. Remarkably, this approach permits an enhancement of nighttime power generation that exceeds the level of 1 Wm-2, which is unattainable by alternative methodologies. Outdoor experiments conducted at the King Abdulaziz City for Science and Technology (KACST) have demonstrated unparalleled performance, surpassing prior experimental benchmarks by nearly an order of magnitude. Furthermore, the developed device exhibits the capacity to concurrently supply power to multiple light-emitting diodes, thereby showcasing practical applications for nighttime power generation. This research unveils opportunities for the creation of scalable and efficient 24-hour power generation systems based on thermoelectric devices. Central findings from this study encompass the realization of continuous 24-hour power generation from clean and sustainable energy sources. Theoretical analyses indicate the potential for nighttime power generation reaching up to 1 Wm-2, while experimental results have reached nighttime power generation at a density of 0.5 Wm-2. Additionally, the efficiency of multiple light-emitting diodes (LEDs) has been evaluated when powered by the nighttime output of the integrated thermoelectric generator (TEG). Therefore, this methodology exhibits promise for practical applications, particularly in lighting, marking a pivotal advancement in the utilization of renewable energy for both on-grid and off-grid scenarios.

Keywords: nighttime power generation, thermoelectric devices, radiative cooling, thermal management

Procedia PDF Downloads 31
95 Record Peak Current Density in AlN/GaN Double-Barrier Resonant Tunneling Diodes on Free-Standing Gan Substrates by Modulating Barrier Thickness

Authors: Fang Liu, Jia Jia Yao, Guan Lin Wu, Ren Jie Liu, Zhuang Guo

Abstract:

Leveraging plasma-assisted molecular beam epitaxy (PA-MBE) on c-plane free-standing GaN substrates, this work demonstrates high-performance AlN/GaN double-barrier resonant tunneling diodes (RTDs) featuring stable and repeatable negative differential resistance (NDR) characteristics at room temperature. By scaling down the barrier thickness of AlN and the lateral mesa size of collector, a record peak current density of 1551 kA/cm2 is achieved, accompanied by a peak-to-valley current ratio (PVCR) of 1.24. This can be attributed to the reduced resonant tunneling time under thinner AlN barrier and the suppressed external incoherent valley current by reducing the dislocation number contained in the RTD device with the smaller size of collector. Statistical analysis of the NDR performance of RTD devices with different AlN barrier thicknesses reveals that, as the AlN barrier thickness decreases from 1.5 nm to 1.25 nm, the average peak current density increases from 145.7 kA/cm2 to 1215.1 kA/cm2, while the average PVCR decreases from 1.45 to 1.1, and the peak voltage drops from 6.89 V to 5.49 V. The peak current density obtained in this work represents the highest value reported for nitride-based RTDs to date, while maintaining a high PVCR value simultaneously. This illustrates that an ultra-scaled RTD based on a vertical quantum-well structure and lateral collector size is a valuable approach for the development of nitride-based RTDs with excellent NDR characteristics, revealing their great potential applications in high-frequency oscillation sources and high-speed switch circuits.

Keywords: GaN resonant tunneling diode, peak current density, peak-to-valley current ratio, negative differential resistance

Procedia PDF Downloads 24
94 Fabrication of Silver Nanowire Based Low Temperature Conductive Ink

Authors: Merve Nur Güven Biçer

Abstract:

Conductive inks are used extensively in electronic devices like sensors, batteries, photovoltaic devices, antennae, and organic light-emitting diodes. These inks are typically made from silver. Wearable technology is another industry that requires inks to be flexible. The aim of this study is the fabrication of low-temperature silver paste by synthesis long silver nanowires.

Keywords: silver ink, conductive ink, low temperature conductive ink, silver nanowire

Procedia PDF Downloads 161
93 Numerical Investigation of 3D Printed Pin Fin Heat Sinks for Automotive Inverter Cooling Application

Authors: Alexander Kospach, Fabian Benezeder, Jürgen Abraham

Abstract:

E-mobility poses new challenges for inverters (e.g., higher switching frequencies) in terms of thermal behavior and thermal management. Due to even higher switching frequencies, thermal losses become greater, and the cooling of critical components (like insulated gate bipolar transistor and diodes) comes into focus. New manufacturing methods, such as 3D printing, enable completely new pin-fin structures that can handle higher waste heat to meet the new thermal requirements. Based on the geometrical specifications of the industrial partner regarding the manufacturing possibilities for 3D printing, different and completely new pin-fin structures were numerically investigated for their hydraulic and thermal behavior in fundamental studies assuming an indirect liquid cooling. For the 3D computational fluid dynamics (CFD) thermal simulations OpenFOAM was used, which has as numerical method the finite volume method for solving the conjugate heat transfer problem. A steady-state solver for turbulent fluid flow and solid heat conduction with conjugate heat transfer between solid and fluid regions was used for the simulations. In total, up to fifty pinfin structures and arrangements, some of them completely new, were numerically investigated. On the basis of the results of the principal investigations, the best two pin-fin structures and arrangements for the complete module cooling of an automotive inverter were numerically investigated and compared. There are clear differences in the maximum temperatures for the critical components, such as IGTBs and diodes. In summary, it was shown that 3D pin fin structures can significantly contribute to the improvement of heat transfer and cooling of an automotive inverter. This enables in the future smaller cooling designs and a better lifetime of automotive inverter modules. The new pin fin structures and arrangements can also be applied to other cooling applications where 3D printing can be used.

Keywords: pin fin heat sink optimization, 3D printed pin fins, CFD simulation, power electronic cooling, thermal management

Procedia PDF Downloads 63
92 A Low-Voltage Synchronous Command for JFET Rectifiers

Authors: P. Monginaud, J. C. Baudey

Abstract:

The synchronous, low-voltage command for JFET Rectifiers has many applications: indeed, replacing the traditional diodes by these components allows enhanced performances in gain, linearity and phase shift. We introduce here a new bridge, including JFET associated with pull-down, bipolar command systems, and double-purpose logic gates.

Keywords: synchronous, rectifier, MOSFET, JFET, bipolar command system, push-pull circuits, double-purpose logic gates

Procedia PDF Downloads 336
91 Effects of Magnetic Field on 4H-SiC P-N Junctions

Authors: Khimmatali Nomozovich Juraev

Abstract:

Silicon carbide is one of the promising materials with potential applications in electronic devices using high power, high frequency and high electric field. Currently, silicon carbide is used to manufacture high power and frequency diodes, transistors, radiation detectors, light emitting diodes (LEDs) and other functional devices. In this work, the effects of magnetic field on p-n junctions based on 4H-SiC were experimentally studied. As a research material, monocrystalline silicon carbide wafers (Cree Research, Inc., USA) with relatively few growth defects grown by physical vapor transport (PVT) method were used: Nd dislocations 104 cm², Nm micropipes ~ 10–10² cm-², thickness ~ 300-600 μm, surface ~ 0.25 cm², resistivity ~ 3.6–20 Ωcm, the concentration of background impurities Nd − Na ~ (0.5–1.0)×1017cm-³. The initial parameters of the samples were determined on a Hall Effect Measurement System HMS-7000 (Ecopia) measuring device. Diffusing Ni nickel atoms were covered to the silicon surface of silicon carbide in a Universal Vacuum Post device at a vacuum of 10-⁵ -10-⁶ Torr by thermal sputtering and kept at a temperature of 600-650°C for 30 minutes. Then Ni atoms were diffused into the silicon carbide 4H-SiC sample at a temperature of 1150-1300°C by low temperature diffusion method in an air atmosphere, and the effects of the magnetic field on the I-V characteristics of the samples were studied. I-V characteristics of silicon carbide 4H-SiC p-n junction sample were measured in the magnetic field and in the absence of a magnetic field. The measurements were carried out under conditions where the magnitude of the magnetic field induction vector was 0.5 T. In the state, the direction of the current flowing through the diode is perpendicular to the direction of the magnetic field. From the obtained results, it can be seen that the magnetic field significantly affects the I-V characteristics of the p-n junction in the magnetic field when it is measured in the forward direction. Under the influence of the magnetic field, the change of the magnetic resistance of the sample of silicon carbide 4H-SiC p-n junction was determined. It was found that changing the magnetic field poles increases the direct forward current of the p-n junction or decreases it when the field direction changes. These unique electrical properties of the 4H-SiC p-n junction sample of silicon carbide, that is, the change of the sample's electrical properties in a magnetic field, makes it possible to fabricate magnetic field sensing devices based on silicon carbide to use at harsh environments in future. So far, the productions of silicon carbide magnetic detectors are not available in the industry.

Keywords: 4H-SiC, diffusion Ni, effects of magnetic field, I-V characteristics

Procedia PDF Downloads 63
90 Comprehensive Study of X-Ray Emission by APF Plasma Focus Device

Authors: M. Habibi

Abstract:

The time-resolved studies of soft and hard X-ray were carried out over a wide range of argon pressures by employing an array of eight filtered photo PIN diodes and a scintillation detector, simultaneously. In 50% of the discharges, the soft X-ray is seen to be emitted in short multiple pulses corresponding to different compression, whereas it is a single pulse for hard X-rays corresponding to only the first strong compression. It should be stated that multiple compressions dominantly occur at low pressures and high pressures are mostly in the single compression regime. In 43% of the discharges, at all pressures except for optimum pressure, the first period is characterized by two or more sharp peaks.The X–ray signal intensity during the second and subsequent compressions is much smaller than the first compression.

Keywords: plasma focus device, SXR, HXR, Pin-diode, argon plasma

Procedia PDF Downloads 383
89 Structural and Luminescent Properties of EU Doped SrY₂O₄ Phosphors

Authors: Ruby Priya, O. P. Pandey

Abstract:

Herein, we report the structural and luminescent properties of undoped and Eu doped SrY₂O₄ phosphors. The phosphors are synthesized via the combustion synthesis route using glycine as a fuel. The structural, morphological, and optical characterizations are done via X-ray diffraction (XRD), scanning electron microscopy (SEM), photoluminescent (PL) techniques. The pure phase SrY₂O₄ is obtained at 1100℃, below which impure phases such as Y₂O₃ and SrO were dominant. All the phosphors are excited under UV excitation and exhibited intense emission around 611 nm, which is the typical transition of Eu ions. The phase formation of the synthesized phosphors is studied via analyzing XRD patterns. The as-synthesized phosphors find tremendous applications in optoelectronic devices, light-emitting diodes, and sensors.

Keywords: combustion, europium, glycine, luminescence

Procedia PDF Downloads 132
88 Efficiency Enhancement of Blue OLED by Incorporating Ag Nanoplate Layers

Authors: So-Jeong Kim, Nak-Kwan Chung, Jintae Kim, Juyoung Yun

Abstract:

The metal nanoplates are potentially used for electroluminescence enhancement of OLEDs owing to the localized surface plasmon resonance. In our study, enhanced electroluminescence in blue organic light-emitting diodes is demonstrated by incorporating silver nanoplates into poly(3,4-ethylene dioxythiophene):polystyrene sulfonic acid. To have surface plasmon resonance absorption peak matching with photoluminescent (PL) peak of blue, Ag nanoplates with triangular shape are used in this study. Finally, about 30 % enhancement in electroluminescence intensity and current efficiency for blue emission devices is obtained via Ag nanoplates.

Keywords: efficiency enhancement, nanoplate, OLED, surface plasmon resonance

Procedia PDF Downloads 319
87 Equivalent Circuit Modelling of Active Reflectarray Antenna

Authors: M. Y. Ismail, M. Inam

Abstract:

This paper presents equivalent circuit modeling of active planar reflectors which can be used for the detailed analysis and characterization of reflector performance in terms of lumped components. Equivalent circuit representation has been proposed for PIN diodes and liquid crystal based active planar reflectors designed within X-band frequency range. A very close agreement has been demonstrated between equivalent circuit results, 3D EM simulated results as well as measured scattering parameter results. In the case of measured results, a maximum discrepancy of 1.05dB was observed in the reflection loss performance, which can be attributed to the losses occurred during measurement process.

Keywords: Equivalent circuit modelling, planar reflectors, reflectarray antenna, PIN diode, liquid crystal

Procedia PDF Downloads 257
86 Flip-Chip Bonding for Monolithic of Matrix-Addressable GaN-Based Micro-Light-Emitting Diodes Array

Authors: Chien-Ju Chen, Chia-Jui Yu, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu

Abstract:

A 64 × 64 GaN-based micro-light-emitting diode array (μLEDA) with 20 μm in pixel size and 40 μm in pitch by flip-chip bonding (FCB) is demonstrated in this study. Besides, an underfilling (UF) technology is applied to the process for improving the uniformity of device. With those configurations, good characteristics are presented, operation voltage and series resistance of a pixel in the 450 nm flip chip μLEDA are 2.89 V and 1077Ω (4.3 mΩ-cm²) at 25 A/cm², respectively. The μLEDA can sustain higher current density compared to conventional LED, and the power of the device is 9.5 μW at 100 μA and 0.42 mW at 20 mA.

Keywords: GaN, micro-light-emitting diode array(μLEDA), flip-chip bonding, underfilling

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85 Modification of ZnMgO NPs for Improving Device Performance of Quantum Dot Light-emitting Diodes

Authors: Juyon Lee, Myoungjin Park, Jonghoon Kim, Jaekook Ha, Chanhee Lee

Abstract:

We demonstrated a new positive aging methods of QLEDs devices that can apply in large size inkjet printing display. Conventional positive aging method using photo-curable resin remains unclear mechanism of the phenomenon and also there are many limitations to apply large size panels in commercial process. Through the photo acid generator (PAG) in ETL Ink, we achieved 90% of the efficiency of the conventional method and up to 1000h life time stability (T80). This techniques could be applied to next generation of QLEDs panels and also can prove the working mechanism of positive aging in QLED related to modification of ZnMgO NPs.

Keywords: quantum dots, QLED, printing, positive aging, ZnMgO NPs

Procedia PDF Downloads 116
84 ZVZCT PWM Boost DC-DC Converter

Authors: Ismail Aksoy, Haci Bodur, Nihan Altintaş

Abstract:

This paper introduces a boost converter with a new active snubber cell. In this circuit, all of the semiconductor components in the converter softly turns on and turns off with the help of the active snubber cell. Compared to the other converters, the proposed converter has advantages of size, number of components and cost. The main feature of proposed converter is that the extra voltage stresses do not occur on the main switches and main diodes. Also, the current stress on the main switch is acceptable level. Moreover, the proposed converter can operates under light load conditions and wide input line voltage. In this study, the operating principle of the proposed converter is presented and its operation is verified with the Proteus simulation software for a 1 kW and 100 kHz model.

Keywords: active snubber cell, boost converter, zero current switching, zero voltage switching

Procedia PDF Downloads 998
83 AC Voltage Regulators Using Single Phase Matrix Converter

Authors: Nagaraju Jarugu, B. R. Narendra

Abstract:

This paper focused on boost rectification by Single Phase Matrix Converter with fewer numbers of switches. The conventional matrix converter consists of 4 bidirectional switches, i.e. 8 set of IGBT/MOSFET with anti-parallel diodes. In this proposed matrix converter, only six switches are used. The switch commutation arrangements are also carried out in this work. The SPMC topology has many advantages as a minimal passive device use. It is very flexible and it can be used as a lot of converters. The gate pulses to the switches are provided by the PWM techniques. The duty ratio of the switches based on Pulse Width Modulation (PWM) technique was used to produce the output waveform of the circuit, simply by turning ON and OFF the switches. The simulation results using MATLAB/Simulink were provided to validate the feasibility of this proposed method.

Keywords: single phase matrix converter, reduced switches, AC voltage regulators, boost rectifier operation

Procedia PDF Downloads 1159
82 Performance Analysis of Transformerless DC-DC Boost Converter

Authors: Nidhi Vijay, A. K. Sharma

Abstract:

Many industrial applications require power from dc source. DC-DC boost converters are now being used all over the world for rapid transit system. Although these provide high efficiency, smooth control, fast response and regeneration, conventional DC-DC boost converters are unable to provide high step up voltage gain due to effect of power switches, rectifier diodes and equivalent series resistance of inductor and capacitor. This paper proposes new transformerless dc-dc converters to achieve high step up voltage gain as compared to the conventional converter without an extremely high duty ratio. Only one power stage is used in this converter. Steady-state analysis of voltage gain is discussed in brief. Finally, a comparative analysis is given in order to verify the results.

Keywords: MATLAB, DC-DC boost converter, voltage gain, voltage stress

Procedia PDF Downloads 405
81 Evaluation of Colour Perception in Different Correlated Colour Temperature of LED Lighting

Authors: Saadet Akbay, Ayşe Nihan Avcı

Abstract:

The perception of colour is a subjective experience which depends on age, gender, race, cultural and educational backgrounds, etc. of an individual. However, colour perception is also affected by the correlated colour temperature (CCT) of a light source which is considered as one of the most fundamental quantitative lighting characteristics. This study focuses on evaluating colour perception in different CCT of light emitting diodes (LED) lighting. The aim is to compare the inherent colours with the perceived colours under two CCT of ‘warm’ (2700K), and ‘cool’ (4000K) LED lights and to understand how different CTT affect the perception of a colour. Analysis and specifications of colour attributes are made with Natural Colour System (NCS) which is an international colour communication system. The outcome of the study reveals the possible tendencies for perceived colours under different illuminance levels of LED lighting.

Keywords: colour perception, correlated colour temperature, inherent and perceived colour, LED lighting, natural colour system (NCS)

Procedia PDF Downloads 238
80 Effect of Epoxy-ZrP Nanocomposite Top Coating on Inorganic Barrier Layer

Authors: Haesook Kim, Ha Na Ra, Mansu Kim, Hyun Gi Kim, Sung Soo Kim

Abstract:

Epoxy-ZrP (α-zirconium phosphate) nanocomposites were coated on inorganic barrier layer such as sputtering and atomic layer deposition (ALD) to improve the barrier properties and protect the layer. ZrP nanoplatelets were synthesized using a reflux method and exfoliated in the polymer matrix. The barrier properties of coating layer were characterized by measuring water vapor transmission rate (WVTR). The WVTR dramatically decreased after epoxy-ZrP nanocomposite coating, while maintaining the optical properties. It was also investigated the effect of epoxy-ZrP coating on inorganic layer after bending and reliability test. The optimal structure composed of inorganic and epoxy-ZrP nanocomposite layers was used in organic light emitting diodes (OLED) encapsulation.

Keywords: α-zirconium phosphate, barrier properties, epoxy nanocomposites, OLED encapsulation

Procedia PDF Downloads 332
79 X-Ray Detector Technology Optimization In CT Imaging

Authors: Aziz Ikhlef

Abstract:

Most of multi-slices CT scanners are built with detectors composed of scintillator - photodiodes arrays. The photodiodes arrays are mainly based on front-illuminated technology for detectors under 64 slices and on back-illuminated photodiode for systems of 64 slices or more. The designs based on back-illuminated photodiodes were being investigated for CT machines to overcome the challenge of the higher number of runs and connection required in front-illuminated diodes. In backlit diodes, the electronic noise has already been improved because of the reduction of the load capacitance due to the routing reduction. This translated by a better image quality in low signal application, improving low dose imaging in large patient population. With the fast development of multi-detector-rows CT (MDCT) scanners and the increasing number of examinations, the clinical community has raised significant concerns on radiation dose received by the patient in both medical and regulatory community. In order to reduce individual exposure and in response to the recommendations of the International Commission on Radiological Protection (ICRP) which suggests that all exposures should be kept as low as reasonably achievable (ALARA), every manufacturer is trying to implement strategies and solutions to optimize dose efficiency and image quality based on x-ray emission and scanning parameters. The added demands on the CT detector performance also comes from the increased utilization of spectral CT or dual-energy CT in which projection data of two different tube potentials are collected. One of the approaches utilizes a technology called fast-kVp switching in which the tube voltage is switched between 80kVp and 140kVp in fraction of a millisecond. To reduce the cross-contamination of signals, the scintillator based detector temporal response has to be extremely fast to minimize the residual signal from previous samples. In addition, this paper will present an overview of detector technologies and image chain improvement which have been investigated in the last few years to improve the signal-noise ratio and the dose efficiency CT scanners in regular examinations and in energy discrimination techniques. Several parameters of the image chain in general and in the detector technology contribute in the optimization of the final image quality. We will go through the properties of the post-patient collimation to improve the scatter-to-primary ratio, the scintillator material properties such as light output, afterglow, primary speed, crosstalk to improve the spectral imaging, the photodiode design characteristics and the data acquisition system (DAS) to optimize for crosstalk, noise and temporal/spatial resolution.

Keywords: computed tomography, X-ray detector, medical imaging, image quality, artifacts

Procedia PDF Downloads 231
78 X-Ray Detector Technology Optimization in Computed Tomography

Authors: Aziz Ikhlef

Abstract:

Most of multi-slices Computed Tomography (CT) scanners are built with detectors composed of scintillator - photodiodes arrays. The photodiodes arrays are mainly based on front-illuminated technology for detectors under 64 slices and on back-illuminated photodiode for systems of 64 slices or more. The designs based on back-illuminated photodiodes were being investigated for CT machines to overcome the challenge of the higher number of runs and connection required in front-illuminated diodes. In backlit diodes, the electronic noise has already been improved because of the reduction of the load capacitance due to the routing reduction. This is translated by a better image quality in low signal application, improving low dose imaging in large patient population. With the fast development of multi-detector-rows CT (MDCT) scanners and the increasing number of examinations, the clinical community has raised significant concerns on radiation dose received by the patient in both medical and regulatory community. In order to reduce individual exposure and in response to the recommendations of the International Commission on Radiological Protection (ICRP) which suggests that all exposures should be kept as low as reasonably achievable (ALARA), every manufacturer is trying to implement strategies and solutions to optimize dose efficiency and image quality based on x-ray emission and scanning parameters. The added demands on the CT detector performance also comes from the increased utilization of spectral CT or dual-energy CT in which projection data of two different tube potentials are collected. One of the approaches utilizes a technology called fast-kVp switching in which the tube voltage is switched between 80 kVp and 140 kVp in fraction of a millisecond. To reduce the cross-contamination of signals, the scintillator based detector temporal response has to be extremely fast to minimize the residual signal from previous samples. In addition, this paper will present an overview of detector technologies and image chain improvement which have been investigated in the last few years to improve the signal-noise ratio and the dose efficiency CT scanners in regular examinations and in energy discrimination techniques. Several parameters of the image chain in general and in the detector technology contribute in the optimization of the final image quality. We will go through the properties of the post-patient collimation to improve the scatter-to-primary ratio, the scintillator material properties such as light output, afterglow, primary speed, crosstalk to improve the spectral imaging, the photodiode design characteristics and the data acquisition system (DAS) to optimize for crosstalk, noise and temporal/spatial resolution.

Keywords: computed tomography, X-ray detector, medical imaging, image quality, artifacts

Procedia PDF Downloads 169
77 Influence of Chirp of High-Speed Laser Diodes and Fiber Dispersion on Performance of Non-Amplified 40-Gbps Optical Fiber Links

Authors: Ahmed Bakry, Moustafa Ahmed

Abstract:

We model and simulate the combined effect of fiber dispersion and frequency chirp of a directly modulated high-speed laser diode on the figures of merit of a non-amplified 40-Gbps optical fiber link. We consider both the return to zero (RZ) and non-return to zero (NRZ) patterns of the pseudorandom modulation bits. The performance of the fiber communication system is assessed by the fiber-length limitation due to the fiber dispersion. We study the influence of replacing standard single-mode fibers by non-zero dispersion-shifted fibers on the maximum fiber length and evaluate the associated power penalty. We introduce new dispersion tolerances for 1-dB power penalty of the RZ and NRZ 40-Gbps optical fiber links.

Keywords: bit error rate, dispersion, frequency chirp, fiber communications, semiconductor laser

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76 Semiconductor Device of Tapered Waveguide for Broadband Optical Communications

Authors: Keita Iwai, Isao Tomita

Abstract:

To expand the optical spectrum for use in broadband optical communications, we study the properties of a semiconductor waveguide device with a tapered structure including its third-order optical nonlinearity. Spectral-broadened output by the tapered structure has the potential to create a compact, built-in device for optical communications. Here we deal with a compound semiconductor waveguide, the material of which is the same as that of laser diodes used in the communication systems, i.e., InₓGa₁₋ₓAsᵧP₁₋ᵧ, which has large optical nonlinearity. We confirm that our structure widens the output spectrum sufficiently by controlling its taper form factor while utilizing the large nonlinear refraction of InₓGa₁₋ₓAsᵧP₁₋ᵧ. We also examine the taper effect for nonlinear optical loss.

Keywords: InₓGa₁₋ₓAsᵧP₁₋ᵧ, waveguide, nonlinear refraction, spectral spreading, taper device

Procedia PDF Downloads 125
75 Analysis of a Power Factor Correction Converter for Light Emitting Diode Driver Application

Authors: Edwina G. Rodrigues, S. J. Bindhu, A. V. Rajesh

Abstract:

This paper proposes a switched capacitor based driver circuit for high power light emitting diodes with a front end rectifier. LEDs are low-voltage light sources, requiring a constant DC voltage or current to operate optimally. LEDs, therefore, require a device that can convert incoming AC power to the proper DC voltage, and regulate the current flowing through the LED during operation. Proposed topology has a front end converter. It is an AC-DC rectifier that works on bridgeless boost topology which shapes the input current waveform. The front end converter is followed by a DC-DC converter which provides a constant DC voltage across the LEDs. A 12V AC input is given to the input of frontend converter which rectifies and boost the voltage to 24v DC and gives it to the DC-DC converter. The DC-DC converter converts the 24V DC and regulates this constant DC voltage across the LEDs.

Keywords: bridgeless rectifier, power factor correction(PFC), SC converter, total harmonic distortion (THD)

Procedia PDF Downloads 843
74 Laser Irradiated GeSn Photodetector for Improved Infrared Photodetection

Authors: Patrik Scajev, Pavels Onufrijevs, Algirdas Mekys, Tadas Malinauskas, Dominykas Augulis, Liudvikas Subacius, Kuo-Chih Lee, Jevgenijs Kaupuzs, Arturs Medvids, Hung Hsiang Cheng

Abstract:

In this study, we focused on the optoelectronic properties of the photodiodes prepared by using 200 nm thick Ge₀.₉₅Sn₀.₀₅ epitaxial layers on Ge/n-Si substrate with aluminum contacts. Photodiodes were formed on non-irradiated and Nd: YAG laser irradiated Ge₀.₉₅Sn₀.₀₅ layers. The samples were irradiated by pulsed Nd: YAG laser with 136.7-462.6 MW/cm² intensity. The photodiodes were characterized by using short laser pulses with the wavelength in the 2.0-2.6 μm range. The laser-irradiated diode was found more sensitive in the long-wavelength range due to laser-induced Sn atoms redistribution providing formation of graded bandgap structure. Sub-millisecond photocurrent relaxation in the diodes revealed their suitability for image sensors. Our findings open the perspective for improving the photo-sensitivity of GeSn alloys in the mid-infrared by pulsed laser processing.

Keywords: GeSn, laser processing, photodetector, infrared

Procedia PDF Downloads 124
73 Utilizing Quantum Chemistry for Nanotechnology: Electron and Spin Movement in Molecular Devices

Authors: Mahsa Fathollahzadeh

Abstract:

The quick advancement of nanotechnology necessitates the creation of innovative theoretical approaches to elucidate complex experimental findings and forecast novel capabilities of nanodevices. Therefore, over the past ten years, a difficult task in quantum chemistry has been comprehending electron and spin transport in molecular devices. This thorough evaluation presents a comprehensive overview of current research and its status in the field of molecular electronics, emphasizing the theoretical applications to various device types and including a brief introduction to theoretical methods and their practical implementation plan. The subject matter includes a variety of molecular mechanisms like molecular cables, diodes, transistors, electrical and visual switches, nano detectors, magnetic valve gadgets, inverse electrical resistance gadgets, and electron tunneling exploration. The text discusses both the constraints of the method presented and the potential strategies to address them, with a total of 183 references.

Keywords: chemistry, nanotechnology, quantum, molecule, spin

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72 Characterization of Carbazole-Based Host Material for Highly Efficient Thermally Activated Delayed Fluorescence Emitter

Authors: Malek Mahmoudi, Jonas Keruckas, Dmytro Volyniuk, Jurate Simokaitiene, Juozas V. Grazulevicius

Abstract:

Host materials have been discovered as one of the most appealing methods for harvesting triplet states in organic materials for application in organic light-emitting diodes (OLEDs). The ideal host-guest system for emission in thermally delayed fluorescence OLEDs with 20% guest concentration for efficient energy transfer has been demonstrated in the present investigation. In this work, 3,3'-bis[9-(4-fluorophenyl) carbazole] (bFPC) has been used as the host, which induces balanced charge carrier transport for high-efficiency OLEDs.For providing a complete characterization of the synthesized compound, photophysical, photoelectrical, charge-transporting, and electrochemical properties of the compound have been examined. Excited-state lifetimes and singlet-triplet energy gaps were measured for characterization of photophysical properties, while thermogravimetric analysis, as well as differential scanning calorimetry measurements, were performed for probing of electrochemical and thermal properties of the compound. The electrochemical properties of this compound were investigated by cyclic voltammetry (CV) method, and ionization potential (IPCV) value of 5.68 eV was observed. UV–Vis absorption and photoluminescence spectrum of a solution of the compound in toluene (10-5 M) showed maxima at 302 and 405 nm, respectively. Photoelectron emission spectrometry was used for the characterization of charge-injection properties of the studied compound in solid. The ionization potential of this material was found to be 5.78 eV, and time-of-flight measurement was used for testing charge-transporting properties and hole mobility estimated using this technique in a vacuum-deposited layer reached 4×10-4 cm2 V-1s-1. Since the compound with high charge mobilities was tested as a host in an organic light-emitting diode. The device was fabricated by successive deposition onto a pre-cleaned indium tin oxide (ITO) coated glass substrate under a vacuum of 10-6 Torr and consisting of an indium-tin-oxide anode, hole injection and transporting layer(MoO3, NPB), emitting layer with bFPC as a host and 4CzIPN (2,4,5,6-tetra(9-carbazolyl)isophthalonitrile) which is a new highly efficient green thermally activated delayed fluorescence (TADF) material as an emitter, an electron transporting layer(TPBi) and lithium fluoride layer topped with aluminum layer as a cathode exhibited the highest maximum current efficiency and power efficiency of 33.9 cd/A and 23.5 lm/W, respectively and the electroluminescence spectrum showed only a peak at 512nm. Furthermore, the new bicarbazole-based compound was tested as a host in thermally activated delayed fluorescence organic light-emitting diodes are reaching luminance of 25300 cd m-2 and external quantum efficiency of 10.1%. Interestingly, the turn-on voltage was low enough (3.8 V), and such a device can be used for highly efficient light sources.

Keywords: thermally-activated delayed fluorescence, host material, ionization energy, charge mobility, electroluminescence

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71 A Continuous Switching Technique for a Single Phase Bridgeless and Transformer-Less Active Rectifier with High Power Factor and Voltage Stabilization

Authors: Rahul Ganpat Mapari, D. G. Wakde

Abstract:

In this paper, a proposed approach to improve the power factor of single-phase rectifiers and to regulate the output voltage against the change in grid voltage and load is presented. This converter topology is evaluated on the basis of performance and its salient features like simplicity, low cost and high performance are discussed to analyze its applicability. The proposed control strategy is bridgeless, transformer-less and output current sensor-less and consists of only two Bi-directional IGBTs and two diodes. The voltage regulation is achieved by a simple voltage divider to communicate to a controller to control the duty cycles of PWM. A control technique and operational procedure are also developed, both theoretically and experimentally. The experimental results clearly verify the theoretical analysis from the prototype connected to grid unity.

Keywords: Active Rectifier (AC-DC), power factor, single phase, voltage regulation

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70 Performance of Armchair Graphene Nanoribbon Resonant Tunneling Diode under Uniaxial Strain

Authors: Milad Zoghi, M. Zahangir Kabir

Abstract:

Performance of armchair graphene nanoribbon (AGNR) resonant tunneling diodes (RTD) alter if they go under strain. This may happen due to either using stretchable substrates or real working conditions such as heat generation. Therefore, it is informative to understand how mechanical deformations such as uniaxial strain can impact the performance of AGNR RTDs. In this paper, two platforms of AGNR RTD consist of width-modified AGNR RTD and electric-field modified AGNR RTD are subjected to both compressive and tensile uniaxial strain ranging from -2% to +2%. It is found that characteristics of AGNR RTD markedly change under both compressive and tensile strain. In particular, peak to valley ratio (PVR) can be totally disappeared upon strong enough strain deformation. Numerical tight binding (TB) coupled with Non-Equilibrium Green's Function (NEGF) is derived for this study to calculate corresponding Hamiltonian matrices and transport properties.

Keywords: armchair graphene nanoribbon, resonant tunneling diode, uniaxial strain, peak to valley ratio

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69 Li-Fi Technology: Data Transmission through Visible Light

Authors: Shahzad Hassan, Kamran Saeed

Abstract:

People are always in search of Wi-Fi hotspots because Internet is a major demand nowadays. But like all other technologies, there is still room for improvement in the Wi-Fi technology with regards to the speed and quality of connectivity. In order to address these aspects, Harald Haas, a professor at the University of Edinburgh, proposed what we know as the Li-Fi (Light Fidelity). Li-Fi is a new technology in the field of wireless communication to provide connectivity within a network environment. It is a two-way mode of wireless communication using light. Basically, the data is transmitted through Light Emitting Diodes which can vary the intensity of light very fast, even faster than the blink of an eye. From the research and experiments conducted so far, it can be said that Li-Fi can increase the speed and reliability of the transfer of data. This paper pays particular attention on the assessment of the performance of this technology. In other words, it is a 5G technology which uses LED as the medium of data transfer. For coverage within the buildings, Wi-Fi is good but Li-Fi can be considered favorable in situations where large amounts of data are to be transferred in areas with electromagnetic interferences. It brings a lot of data related qualities such as efficiency, security as well as large throughputs to the table of wireless communication. All in all, it can be said that Li-Fi is going to be a future phenomenon where the presence of light will mean access to the Internet as well as speedy data transfer.

Keywords: communication, LED, Li-Fi, Wi-Fi

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68 Evaluation and Analysis of Light Emitting Diode Distribution in an Indoor Visible Light Communication

Authors: Olawale J. Olaluyi, Ayodele S. Oluwole, O. Akinsanmi, Johnson O. Adeogo

Abstract:

Communication using visible light VLC is considered a cutting-edge technology used for data transmission and illumination since it uses less energy than radio frequency (RF) technology and has a large bandwidth, extended lifespan, and high security. The room's irregular distribution of small base stations, or LED array distribution, is the cause of the obscured area, minimum signal-to-noise ratio (SNR), and received power. In order to maximize the received power distribution and SNR at the center of the room for an indoor VLC system, the researchers offer an innovative model for the placement of eight LED array distributions in this work. We have investigated the arrangement of the LED array distribution with regard to receiving power to fill the open space in the center of the room. The suggested LED array distribution saved 36.2% of the transmitted power, according to the simulation findings. Aside from that, the entire room was equally covered. This leads to an increase in both received power and SNR.

Keywords: visible light communication (VLC), light emitted diodes (LED), optical power distribution, signal-to-noise ratio (SNR).

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