Search results for: light emitted diodes (LED)

Authors: T. A. Shahul Hameed, P. Predeep, Anju Iqbal, M. R. Baiju

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Research and development in organic photovoltaic cells and Organic Light Emitting Diodes have gained wider acceptance due to the advent of many advanced techniques to enhance the efficiency and operational hours. Here we report our work on design, simulation and characterizationracterize the bulk heterojunction organic photo cell and polymer light emitting diodes in different layer configurations using ATLAS, a licensed device simulation tool. Bulk heterojuction and multilayer devices were simulated for comparing their performance parameters.

Keywords: HOMO, LUMO, PLED, OPV

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Authors: Anil Kawan, Soon Jae Yu, Jong Min Park

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GaN-based 365 nm wavelength ultraviolet (UV) light emitting diodes (LED) have various applications: curing, molding, purification, deodorization, and disinfection etc. However, their usage is limited by very low output power, because of the light absorption in the GaN layers. In this study, we demonstrate a method utilizing removal of 365 nm absorption layer buffer GaN and thinning the n-type GaN so as to improve the light extraction efficiency of the GaN-based 365 nm UV LED. The UV flip chip LEDs of chip size 1.3 mm x 1.3 mm were fabricated using GaN epilayers on a sapphire substrate. Via-hole n-type contacts and highly reflective Ag metal were used for efficient light extraction. LED wafer was aligned and bonded to AlN carrier wafer. To improve the extraction efficiency of the flip chip LED, sapphire substrate and absorption layer buffer GaN were removed by using laser lift-off and dry etching, respectively. To further increase the extraction efficiency of the LED, exposed n-type GaN thickness was reduced by using inductively coupled plasma etching.

Keywords: extraction efficiency, light emitting diodes, n-GaN thinning, ultraviolet

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Authors: Ho-Nyeon Lee

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We propose to use a gradual-refractive-index dielectric (GRID) as a simple and efficient light-outcoupling method for organic light-emitting diodes (OLEDs). Using the simple GRIDs, we could improve the light outcoupling efficiency of OLEDs rather than relying on difficult nano-patterning processes. Through numerical simulations using a finite-difference time-domain (FDTD) method, the feasibility of the GRID structure was examined and the design parameters were extracted. The outcoupling enhancement effects due to the GRIDs were proved through severe experimental works. The GRIDs were adapted to bottom-emission OLEDs and top-emission OLEDs. For bottom-emission OLEDs, the efficiency was improved more than 20%, and for top-emission OLEDs, more than 40%. The detailed numerical and experimental results will be presented at the conference site.

Keywords: efficiency, GRID, light outcoupling, OLED

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Authors: Jaeun Park, Daekyoung Kim, Ho Kyoon Chung, Heeyeop Chae

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Quantum dots light-emitting diodes (QD-LEDs) have been considered as the next generation display and lighting devices due to their excellent color purity, photo-stability solution process possibility and good device stability. Currently typical quantum dot light emitting diodes contain organic layers such as PEDOT:PSS and PVK for charge transport layers. To make quantum dot light emitting diodes (QD-LED) more stable, it is required to replace those acidic and relatively unstable organic charge transport layers with inorganic materials. Therefore all inorganic and solution processed quantum dot light emitting diodes can potentially be a solution to stable and cost-effective display devices. We studied solution processed NiO films to replace organic charge transport layers that are required for stable all-inorganic based light emitting diodes. The transition metal oxides can be made by various vacuum and solution processes, but the solution processes are considered more cost-effective than vacuum processes. In this work we investigated solution processed NiOx for a hole transport layer (HTL). NiOx, has valence band energy levels of 5.3eV and they are easy to make sol-gel solutions. Water vapor oxidation process was developed and applied to solution processed all-inorganic QD-LED. Turn-on voltage, luminance and current efficiency of QD in this work were 5V, 1800Cd/m2 and 0.5Cd/A, respectively.

Keywords: QD-LED, metal oxide solution, NiO, all-inorganic QD-LED device

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Authors: Olawale J. Olaluyi, Ayodele S. Oluwole, O. Akinsanmi, Johnson O. Adeogo

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Communication using visible light VLC is considered a cutting-edge technology used for data transmission and illumination since it uses less energy than radio frequency (RF) technology and has a large bandwidth, extended lifespan, and high security. The room's irregular distribution of small base stations, or LED array distribution, is the cause of the obscured area, minimum signal-to-noise ratio (SNR), and received power. In order to maximize the received power distribution and SNR at the center of the room for an indoor VLC system, the researchers offer an innovative model for the placement of eight LED array distributions in this work. We have investigated the arrangement of the LED array distribution with regard to receiving power to fill the open space in the center of the room. The suggested LED array distribution saved 36.2% of the transmitted power, according to the simulation findings. Aside from that, the entire room was equally covered. This leads to an increase in both received power and SNR.

Keywords: visible light communication (VLC), light emitted diodes (LED), optical power distribution, signal-to-noise ratio (SNR).

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Authors: Chaya B. M., C. Dhanush, Inti Sai Srikar, Akula Pavan Parvatalu, Chirag Gowda R

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Recently, there has been a lot of interest in µ-LED technology because of its exceptional qualities, including auto emission, high visibility, low consumption of power, rapid response and longevity. Light-emitting diodes (LED) using III-nitride, such as lighting sources, visible light communication (VLC) devices, and high-power devices, are finding increasing use as miniaturization technology advances. The use of micro-LED displays in place of traditional display technologies like liquid crystal displays (LCDs) and organic light-emitting diodes (OLEDs) is one of the most prominent recent advances, which may even represent the next generation of displays. The development of fully integrated, multifunctional devices and the incorporation of extra capabilities into micro-LED displays, such as sensing, light detection, and solar cells, are the pillars of advanced technology. Due to the wide range of applications for micro-LED technology, the effectiveness and dependability of these devices in numerous harsh conditions are becoming increasingly important. Enough research has been conducted to overcome the under-effectiveness of micro-LED devices. In this paper, different Micro LED design structures are proposed in order to achieve optimized optical properties. In order to attain improved external quantum efficiency (EQE), devices' light extraction efficiency (LEE) has also been boosted.

Keywords: finite difference time domain, light out coupling efficiency, far field intensity, power density, quantum efficiency, flat panel displays

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Authors: Hamid Sharif, Nazish Saleem Abbas, Muhammad Haris Jamil

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Visible light communication is an emerging technology for almost a decade now; there is a growing need for VLC systems to overcome the challenges faced by radio frequency RF communication systems. With the advancement in the development of solid-state sources, in the future would replace incandescent and fluorescent light sources. These solid-state devices are not only to be used for illumination but can also be employed for communication and navigational purposes. The replacement of conventional illumination sources with highly efficient light-emitting diodes (LED's) (generally white light) will reduce energy consumption as well as environmental pollution. White LEDs dissipate very less power as compared to conventional light sources. The use of LED's is not only beneficial in terms of power consumption, but it also has an intrinsic capability for indoor wireless communication as compared to indoor RF communication. It is considerably low in cost to operate than the RF systems such as Wi-Fi routers, allows convenient means of reusing the bandwidth, and there is a huge potential for high data rate transmissions with enhanced data security. This paper provides an overview of some of the current challenges with VLC and proposes a possible solution to deal with these challenges; it also examines some joint protocols to optimize the joint illumination and communication functionality.

Keywords: visible light communication, line of sight, root mean square delay spread, light emitting diodes

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Authors: Gaurav Upadhyay, Nand Kishore, Prashant Ranjan, Shivesh Tripathi, V. S. Tripathi

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In this paper, a patch antenna array design is proposed for vehicular communication. The antenna consists of 2-element patch array. The antenna array is operating at multiple frequency bands. The multiband operation is achieved by use of slots at proper locations at the patch. The array is made reconfigurable by use of two PIN-diodes. The antenna is simulated and measured in four states of diodes i.e. ON-ON, ON-OFF, OFF-ON, and OFF-OFF. In ON-ON state of diodes, the resonant frequencies are 4.62-4.96, 6.50-6.75, 6.90-7.01, 7.34-8.22, 8.89-9.09 GHz. In ON-OFF state of diodes, the measured resonant frequencies are 4.63-4.93, 6.50-6.70 and 7.81-7.91 GHz. In OFF-ON states of diodes the resonant frequencies are 1.24-1.46, 3.40-3.75, 5.07-5.25 and 6.90-7.20 GHz and in the OFF-OFF state of diodes 4.49-4.75 and 5.61-5.98 GHz. The maximum bandwidth of the proposed antenna is 16.29%. The peak gain of the antenna is 3.4 dB at 5.9 GHz, which makes it suitable for vehicular communication.

Keywords: antenna, array, reconfigurable, vehicular

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Authors: Amal Aljohani, Ahmed Iraqi

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Emitting materials with thermally activated delayed fluorescence (TADF) properties as the third generation of organic light-emitting diodes (OLEDs) have received much attention as a modern class of highly efficient emitters because such properties enable the harvesting of both singlet and triplet excitons in EL applications without the doping with complexes of scarce noble metals such as platinum and iridium. Improved molecular design of TADF molecules and applied materials exhibiting internal electroluminescence (EL) with quantum efficiencies of nearly 100% has been achieved being. A2B3 hyperbranched polymers based on new derivatives containing silane core units serving as host materials for thermally activated delayed fluorescence (TADF) guest molecules have been designed and synthesized through several steps, including the synthesis of tetrakis(4-bromophenyl)silane, bis(4-(9H-carbazol-9-yl)phenyl)bis(4-bromophenyl)silane,bis(4-(9H-carbazol-9 yl)phenyl)bis(4-methoxyphenyl)silane and bis(4-(9H-carbazol-9-yl)phenyl)bis(4hydroxyphenyl)silane. This monomer has been used successfully used along with 1,1,1-tri-(p-tosyloxymethyl)-propane to prepare A2B3 hyperbranched polymers via step-growth polymerization. The characterization and the properties of these new host polymers will be presented and discussed in this contribution.

Keywords: carbazole, organic light emitting diodes, thermally activated delayed fluorescence, donor-acceptor, host and guest interaction

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Authors: Bandar Ali Al-Asbahi, Mohammad Hafizuddin Haji Jumali

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Forster energy transfer between poly (9,9'-di-n-octylfluorenyl-2,7-diyl) (PFO)/TiO2 nanoparticles (NPs) as a donor and Fluorol 7GA as an acceptor has been studied. The energy transfer parameters were calculated by using mathematical models. The dominant mechanism responsible for the energy transfer between the donor and acceptor molecules was Forster-type, as evidenced by large values of quenching rate constant, energy transfer rate constant and critical distance of energy transfer. Moreover, these composites which were used as an emissive layer in organic light emitting diodes, were investigated in terms of current density–voltage and electroluminescence spectra.

Keywords: energy transfer parameters, forster-type, electroluminescence, organic light emitting diodes

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Authors: Serkan Sayin, Songul F. Varol

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High attention on the organic light-emitting diodes has been paid since their efficient properties in the flat panel displays, and solid-state lighting was realized. Because of their high efficient electroluminescence, brightness and providing eminent in the emission range, organic light emitting diodes have been preferred a material compared with the other materials consisting of the liquid crystal. Calixarenes obtained from the reaction of p-tert-butyl phenol and formaldehyde in a suitable base have been potentially used in various research area such as catalysis, enzyme immobilization, and applications, ion carrier, sensors, nanoscience, etc. In addition, their tremendous frameworks, as well as their easily functionalization, make them an effective candidate in the applied chemistry. Herein, a calix[4]arene derivative has been synthesized, and its structure has been fully characterized using Fourier Transform Infrared Spectrophotometer (FTIR), proton nuclear magnetic resonance (¹H-NMR), carbon-13 nuclear magnetic resonance (¹³C-NMR), liquid chromatography-mass spectrometry (LC-MS), and elemental analysis techniques. The calixarene derivative has been employed as an emitting layer in the fabrication of the organic light-emitting diodes. The optical and electrochemical features of calixarane-contained organic light-emitting diodes (Clx-OLED) have been also performed. The results showed that Clx-OLED exhibited blue emission and high external quantum efficacy. As a conclusion obtained results attributed that the synthesized calixarane derivative is a promising chromophore with efficient fluorescent quantum yield that provides it an attractive candidate for fabricating effective materials for fluorescent probes and labeling studies. This study was financially supported by the Scientific and Technological Research Council of Turkey (TUBITAK Grant no. 117Z402).

Keywords: calixarene, OLED, supramolecular chemistry, synthesis

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Authors: Meng-Chyi Wu, Bonn Lin, Jyun-Hao Liao, Chein-Ju Chen, Yu-Cheng Jhuang, Mau-Phon Houng, Fang-Hsing Wang, Min-Chu Liu, Cheng-Fu Yang, Cheng-Shong Hong

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Since the use of wireless communications has become critical nowadays, the available RF spectrum has become limited. Ultraviolet (UV) communication system can alleviate the spectrum constraint making UV communication system a potential alternative to future communication demands. Also, UV links can provide faster communication rate and can be used in combination with existing RF communication links, providing new communications diversity with higher user capacity. The UV region of electromagnetic spectrum has been of interest to detector, imaging and communication technologies because the stratospheric ozone layer effectively absorbs some solar UV radiation from reaching the earth surface. The wavebands where most of UV radiation is absorbed by the ozone are commonly known as the solar blind region. By operating in UV-C band (200-280 nm) the communication system can minimize the transmission power consumption since it will have less radiation noise. UV communication uses the UV ray as the medium. Electric signal is carried on this band after being modulated and then be transmitted within the atmosphere as channel. Though the background noise of UV-C communication is very low owing to the solar-blind feature, it leads to a large propagation loss. The 370 nm UV provides a much lower propagation loss than that the UV-C does and the recent device technology for UV source on this band is more mature. The fabricated 370 nm AlGaN light-emitting diodes (LEDs) with an aperture size of 45 m exhibit a modulation bandwidth of 165 MHz at 30 mA and a high power of 7 W/cm2 at 230 A/cm2. In order to solve the problem of low power in single UV LED, a UV LED array is presented in.

Keywords: ultraviolet (UV) communication, light-emitting diodes (LEDs), modulation bandwidth, LED array, 370 nm

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Authors: Andrei Bejan, Luminita Marin, Dalila Belei

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Phenothiazine with electron-rich nitrogen and sulfur heteroatoms has a high electron-donating ability which promotes a good conjugation and therefore low band-gap with consequences upon charge carrier mobility improving and shifting of light emission in visible domain. Moreover, its non-planar butterfly conformation inhibits molecular aggregation and thus preserves quite well the fluorescence quantum yield in solid state compared to solution. Therefore phenothiazine and its derivatives are promising hole transport materials for use in organic electronic and optoelectronic devices as light emitting diodes, photovoltaic cells, integrated circuit sensors or driving circuits for large area display devices. The objective of this paper was to obtain a series of new phenothiazine derivatives by introduction of different electron withdrawing substituents as formyl, carboxyl and cyanoacryl units in order to create a push pull system which has potential to improve the electronic and optical properties. Bromine atom was used as electrono-donor moiety to extend furthermore the existing conjugation. The understudy compounds were structural characterized by FTIR and 1H-NMR spectroscopy and single crystal X-ray diffraction. Besides, the single crystal X-ray diffraction brought information regarding the supramolecular architecture of the compounds. Photophysical properties were monitored by UV-vis and photoluminescence spectroscopy, while the electrochemical behavior was established by cyclic voltammetry. The absorption maxima of the studied compounds vary in a large range (322-455 nm), reflecting the different electronic delocalization degree, depending by the substituent nature. In a similar manner, the emission spectra reveal different color of emitted light, a red shift being evident for the groups with higher electron withdrawing ability. The emitted light is pure and saturated for the compounds containing strong withdrawing formyl or cyanoacryl units and reach the highest quantum yield of 71% for the compound containing bromine and cyanoacrilic units. Electrochemical study show reversible oxidative and reduction processes for all the compounds and a close correlation of the HOMO-LUMO band gap with substituent nature. All these findings suggest the obtained compounds as promising materials for optoelectronic devices.

Keywords: electrochemical properties, phenothiazine derivatives, photoluminescence, quantum yield

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Authors: Shahzad Hassan, Kamran Saeed

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People are always in search of Wi-Fi hotspots because Internet is a major demand nowadays. But like all other technologies, there is still room for improvement in the Wi-Fi technology with regards to the speed and quality of connectivity. In order to address these aspects, Harald Haas, a professor at the University of Edinburgh, proposed what we know as the Li-Fi (Light Fidelity). Li-Fi is a new technology in the field of wireless communication to provide connectivity within a network environment. It is a two-way mode of wireless communication using light. Basically, the data is transmitted through Light Emitting Diodes which can vary the intensity of light very fast, even faster than the blink of an eye. From the research and experiments conducted so far, it can be said that Li-Fi can increase the speed and reliability of the transfer of data. This paper pays particular attention on the assessment of the performance of this technology. In other words, it is a 5G technology which uses LED as the medium of data transfer. For coverage within the buildings, Wi-Fi is good but Li-Fi can be considered favorable in situations where large amounts of data are to be transferred in areas with electromagnetic interferences. It brings a lot of data related qualities such as efficiency, security as well as large throughputs to the table of wireless communication. All in all, it can be said that Li-Fi is going to be a future phenomenon where the presence of light will mean access to the Internet as well as speedy data transfer.

Keywords: communication, LED, Li-Fi, Wi-Fi

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Authors: Alparslan A. Balta, Hilmi Yurdakul, Orkun Tunckan, Servet Turan, Arife Yurdakul

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Si2N2O (Sinoite) is an inorganic-based oxynitride material that reveals promising phosphor candidates for white light-emitting diodes (WLEDs). However, there is now limited knowledge to explain the synthesis of Si2N2O for this purpose. Here, to the best of authors’ knowledge, we report the first time the production of Si2N2O based phosphors by CeO2, SiO2, Si3N4 from main starting powders, and Li2O sintering additive through spark plasma sintering (SPS) route. The processing parameters, e.g., pressure, temperature, and sintering time, were optimized to reach the monophase Si2N2O containing samples. The lattice parameter, crystallite size, and amount of formation phases were characterized in detail by X-ray diffraction (XRD). Grain morphology, particle size, and distribution were analyzed by scanning and transmission electron microscopes (SEM and TEM). Cathodoluminescence (CL) in SEM and photoluminescence (PL) analyses were conducted on the samples to determine the excitation, and emission characteristics of Ce3+ activated Si2N2O. Results showed that the Si2N2O phase in a maximum 90% ratio was obtained by sintering for 15 minutes at 1650oC under 30 MPa pressure. Based on the SEM-CL and PL measurements, Ce3+: Si2N2O phosphor shows a broad emission summit between 400-700 nm that corresponds to white light. The present research was supported by TUBITAK under project number 217M667.

Keywords: cerium, oxynitride, phosphors, sinoite, Si₂N₂O

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Authors: Mohammed Abdullah Alrajhi

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The rapid growth in the number of mobile phone subscribers has resulted in an increased number of mobile base stations all over the world. Generally, mobile base stations are existing in huge numbers in populated areas than in non-populated ones to serve the largest number of users. The total number of mobile subscriptions in the Kingdom of Saudi Arabia reached around 50 million at the end of 2014, with a penetration rate of 165.1% according to the quarterly electronic newsletter issued by the Communications and Information Technology Commission. The current investigation was conducted primarily to measure the level of electromagnetic fields emitted from 400 mobile base stations for the purpose of environmental safety and radiation protection in light of national guidelines for public exposure as well as the International Commission on Non-Ionizing Radiation Protection (ICNIRP). The outcomes of this investigation provide valuable comments and recommendation for safety and protection of electromagnetic fields emitted from mobile base stations.

Keywords: electromagnetic fields, mobile, safety, protection, ICNIRP

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Authors: Woosuk Lee

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We controlled the electron injection rate in inverted quantum dot light-emitting diode (QLED) by inserting PEIE layer between ZnO electron transport layer(ETL) and quantum dots(QDs) layer and successfully demonstrated high efficiency of QLEDs. The inverted QLED has the layer structure of ITO(cathode)/ ZnO NPs/PEIE/QDs/PEIE/P-TPD/MoO3/Al(anode). The PEIE between poly-TPD hole transport layer (HTL) and quantum dot emitting layer protects QD EML during HTL coating process and improves the surface morphology. In addition, the hole injection barrier is reduced by upshifting the valence band maximum (VBM) of QDs. An additional layer of PEIE was introduced between ZnO and QD to balance charge within QD emissive layer in device, which serves as an effective electron blocking layer without changing device operating condition such as turn-on voltage and emissive spectra. As a result, the optimized QLED with 5nm PEIE shows a ~36% improved current efficiency and external quantum efficiency (EQE) compared to the QLED without PEIE.(maximum current efficiency, and EQE are achieved 70cd/A and 17.3%, respectively). In particular, the maximum brightness of the optimized QLED dramatically improved by a factor of 2.3 relative to the QLED without PEIE. The main reasons for these QLED performance improvement are due to the suppressing the leakage current across the device and well confined exciton by inserting PEIE layers.

Keywords: quantum dot light-emitting diodes, interfacial layer, charge-injection balance, suppressing QD charging

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Authors: J. O. Bodunrin, S. J. Moloi

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This study reports on the x-ray crystallography (XRD) structure of cadmium-implanted p-type silicon, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of unimplanted and cadmium-implanted silicon-based diodes. Cadmium was implanted at the energy of 160 KeV to the fluence of 10¹⁵ ion/cm². The results obtained indicate that the diodes were well fabricated, and the introduction of cadmium results in a change in behavior of the diodes from normal exponential to ohmic I-V behavior. The C-V measurements, on the other hand, show that the measured capacitance increased after cadmium doping due to the injected charge carriers. The doping density of the p-Si material and the device's Schottky barrier height was extracted, and the doping density of the undoped p-Si material increased after cadmium doping while the Schottky barrier height reduced. In general, the results obtained here are similar to those obtained on the diodes fabricated on radiation-hard material, indicating that cadmium is a promising metal dopant to improve the radiation hardness of silicon. Thus, this study would assist in adding possible options to improve the radiation hardness of silicon to be used in high energy physics experiments.

Keywords: cadmium, capacitance-voltage, current-voltage, high energy physics experiment, x-ray crystallography, XRD

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Authors: Makoto Hasegawa, Seika Tokumitsu

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Spectra of light beams emitted from white-color LED torches are different from those of conventional electric torches. In order to confirm if white-color LED torches can be used as light sources for popular sunset color demonstrations in spite of such differences, spectra of travelled light beams and scattered light beams with each of a white-color LED torch (composed of a blue LED and yellow-color fluorescent material) and a conventional electric torch as a light source were measured and compared with each other in a 50 cm-long water tank for sunset color demonstration experiments. Suspension liquid was prepared from acryl-emulsion and tap-water in the water tank, and light beams from the white-color LED torch or the conventional electric torch were allowed to travel in this suspension liquid. Sunset-like color was actually observed when the white-color LED torch was used as the light source in sunset color demonstrations. However, the observed colors when viewed with naked eye look slightly different from those obtainable with the conventional electric torch. At the same time, with the white-color LED, changes in colors in short to middle wavelength regions were recognized with careful observations. From those results, white-color LED torches are confirmed to be applicable as light sources in sunset color demonstrations, although certain attentions have to be paid. Further advanced classes will be successfully performed with white-color LED torches as light sources.

Keywords: blue sky demonstration, sunset color demonstration, white LED torch, physics education

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Authors: Chien-Ju Chen, Chia-Jui Yu, Jyun-Hao Liao, Chia-Ching Wu, Meng-Chyi Wu

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A 64 × 64 GaN-based micro-light-emitting diode array (μLEDA) with 20 μm in pixel size and 40 μm in pitch by flip-chip bonding (FCB) is demonstrated in this study. Besides, an underfilling (UF) technology is applied to the process for improving the uniformity of device. With those configurations, good characteristics are presented, operation voltage and series resistance of a pixel in the 450 nm flip chip μLEDA are 2.89 V and 1077Ω (4.3 mΩ-cm²) at 25 A/cm², respectively. The μLEDA can sustain higher current density compared to conventional LED, and the power of the device is 9.5 μW at 100 μA and 0.42 mW at 20 mA.

Keywords: GaN, micro-light-emitting diode array(μLEDA), flip-chip bonding, underfilling

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Authors: Taegyoo Woo, Jong Kang Park, Jong Tae Kim

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Visible Light Communication (VLC) provides wireless communication features in illumination systems. One of the key applications is to recognize the user location by indoor illuminators such as light emitting diodes. For localization of individual receivers in these systems, we usually assume that receivers and transmitters are placed in parallel. However, it is difficult to satisfy this assumption because the receivers move randomly in real case. It is necessary to analyze the case when transmitter is not placed perfectly parallel to receiver. It is also important to identify changes on optical gain by the tilted angles and distances of them against the illuminators. In this paper, we simulate optical gain for various cases where the tilt of the receiver and the distance change. Then, we identified changing patterns of optical gains according to tilted angles of a receiver and distance. These results can help many VLC applications understand the extent of the location errors with regard to optical gains of the receivers and identify the root cause.

Keywords: visible light communication, incident angle, optical gain, light emitting diode

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Authors: Mohit Kalra, Varun S., Mayuri Gandhi

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CeF3 nanophosphors has been extensively investigated in the recent years for lighting and numerous bio-applications. Down conversion emissions in CeF3:Eu3+/Tb3+ phosphors were studied with the aim of obtaining a white light emitting composition, by a simple co-precipitation method. The material was characterized by X-ray Diffraction (XRD), High Resolution Transmission Electron Microscopy (HR-TEM), Fourier Transform Infrared Spectroscopy (FT-IR) and Photoluminescence (PL). Uniformly distributed nanoparticles were obtained with an average particle size 8-10 nm. Different doping concentrations were performed and fluorescence study was carried out to optimize the dopants concentration for maximum luminescence intensity. The steady state and time resolved luminescence studies confirmed efficient energy transfer from the host to activator ions. Different concentrations of Tb 3+, Eu 3+ were doped to achieve a white light emitting phosphor for UV-based Light Emitting Diodes (LEDs). The nanoparticles showed characteristic emission of respective dopants (Eu 3+, Tb3+) when excited at the 4f→5d transition of Ce3+. The chromaticity coordinates for these samples were calculated and the CeF3 doped with Eu 3+ and Tb3+ gave an emission very close to white light. These materials may find its applications in optoelectronics and various bio applications.

Keywords: white light down-conversion, nanophosphors, LEDs, rare earth, cerium fluoride, lanthanides

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Authors: Alparslan A. Balta, Hilmi Yurdakul, Orkun Tunckan, Servet Turan, Arife Yurdakul

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A silicon oxynitride (Si2N2O), the mineralogical name is “Sinoite”, reveals the outstanding physical, mechanical and thermal properties, e.g., good oxidation resistance at high temperatures, high fracture toughness with rod shape, high hardness, low theoretical density, good thermal shock resistance by low thermal expansion coefficient and high thermal conductivity. In addition, the orthorhombic crystal structure of Si2N2O allows accommodating the rare earth (RE) element atoms along the “c” axis due to existing large structural interstitial sites. Here, 0.02 to 0.12 wt. % Nd3+ doped Si2N2O samples were successfully synthesized by spark plasma sintering (SPS) method at 30MPa pressure and 1650oC temperature. Li2O was also utilized as a sintering additive to take advantage of low eutectic point during synthesizing. The specimens were characterized in detail by scanning electron microscopy (SEM), transmission electron microscopy (TEM), X-ray diffraction (XRD) and cathodoluminescence (CL) in SEM and photoluminescence (PL) spectroscopy. Based on the overall results, the Si2N2O phase was obtained above 90% by the SPS route. Furthermore, Nd3+: Si2N2O samples showed a very broad intense emission peak between 400-700 nm, which corresponds to white color. Therefore, this material can be considered as a promising candidate for white light-emitting diodes (WLEDs) purposes. This study was supported by TUBITAK under project number 217M667.

Keywords: neodymium, oxynitride, Si₂N₂O, WLEDs

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Authors: Abdulla Almulla, Wafaa Mahdi

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Building materials can make a significant contribution to the level of natural radioactivity in closed dwelling areas. Therefore, developing an expert system for monitoring the activity concentrations (ACs) of naturally occurring radioactive materials (NORMs) existing in building materials is useful for limiting the population’s exposure to gamma radiation emitted from those materials. The present work not only is aimed at examining the indoor radon concentration emitted by the building materials that are originated from various countries but are commercially available in Kuwait, but also is aimed at developing an expert system for monitoring the radiation emitted from these materials and classifying it as normal (acceptable) or dangerous (unacceptable). This system makes it possible to always monitor any radiological risks to human health. When detecting high doses of radiation, the system gives warning messages.

Keywords: building materials, NORMs, HNBRA, radionuclides, activity concentrations, expert systems

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Authors: M. Habibi

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The time-resolved studies of soft and hard X-ray were carried out over a wide range of argon pressures by employing an array of eight filtered photo PIN diodes and a scintillation detector, simultaneously. In 50% of the discharges, the soft X-ray is seen to be emitted in short multiple pulses corresponding to different compression, whereas it is a single pulse for hard X-rays corresponding to only the first strong compression. It should be stated that multiple compressions dominantly occur at low pressures and high pressures are mostly in the single compression regime. In 43% of the discharges, at all pressures except for optimum pressure, the first period is characterized by two or more sharp peaks.The X–ray signal intensity during the second and subsequent compressions is much smaller than the first compression.

Keywords: plasma focus device, SXR, HXR, Pin-diode, argon plasma

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Authors: Suhaila Isaak, Yusmeeraz Yusof, Khairunnisa Mohd Yusof, Ahmad Safuan Abdul Rashid

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Soil fertility is commonly evaluated by soil macronutrients such as nitrate, potassium, and phosphorus contents. Optical spectroscopy is an emerging technology which is rapid and simple has been widely used in agriculture to measure soil fertility. For visible and near infrared absorption spectroscopy, the absorbed light level in is useful for soil macro-nutrient measurement. This is because the absorption of light in a soil sample influences sensitivity of the measurement. This paper reports the performance of visible and near infrared absorption spectroscopy in the 400–1400 nm wavelength range using light-emitting diode as the excitation light source to predict the soil macronutrient content of nitrate, potassium, and phosphorus. The experimental results show an improved linear regression analysis of various soil specimens based on the Beer–Lambert law to determine sensitivity of soil spectroscopy by evaluating the absorption of characteristic peaks emitted from a light-emitting diode and detected by high sensitivity optical spectrometer. This would denote in developing a simple and low-cost soil spectroscopy with light-emitting diode for future implementation.

Keywords: macronutrients absorption, optical spectroscopy, soil, absorption

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Authors: Deli Mona, Rafika Husni

Abstract:

The aim of this research is to evaluate the effect of lighting distance on surface hardness of light composite resin. We held laboratory experimental research with post-test only group design. The samples used are 30 disc-like hybrid composite resins with the diameter is 6 mm and the thickness is 2 mm, lighted by an LED for 20 seconds. They were divided into 3 groups, and every group was consisted by 10 samples, which were 0 mm, 2 mm, and 5 mm lighting distance group. Every samples group was treated with hardness test, Vicker Hardness Test, then analyzed with one-way ANOVA test to evaluate the effect of lighting distance differences on surface hardness of light composite resin. Statistic test result shown hardness mean change of composite renin between 0 mm and 2 mm lighting distance with 0.00 significance (p<0.05), between 0 mm and 5 mm lighting distance with 0.00 significance (p<0.05), and 2 mm and 5 mm lighting distance with 0.05 significance (p<0.05). According to the result of this research, we concluded that the further lighting distance, the more surface hardness decline of hybrid composite resin.

Keywords: composite resin hybrid, tip distance, microhardness, light curing LED

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Authors: Abdelaziz Rabehi

Abstract:

The current–voltage (I–V) characteristics of Au/GaN Schottky diodes were measured at room temperature. In addition, capacitance–voltage–frequency (C–V–f) characteristics are investigated by considering the interface states (Nss) at frequency range 100 kHz to 1 MHz. From the I–V characteristics of the Schottky diode, ideality factor (n) and barrier height (Φb) values of 1.22 and 0.56 eV, respectively, were obtained from a forward bias I–V plot. In addition, the interface states distribution profile as a function of (Ess − Ev) was extracted from the forward bias I–V measurements by taking into account the bias dependence of the effective barrier height (Φe) for the Schottky diode. The C–V curves gave a barrier height value higher than those obtained from I–V measurements. This discrepancy is due to the different nature of the I–V and C–V measurement techniques.

Keywords: Schottky diodes, frequency dependence, barrier height, interface states

Procedia PDF Downloads 277

Authors: Jinlu Ruan, Liang Chen, Bo Liu, Xiaoping Ouyang, Zhichao Zhu, Zhongbing Zhang, Shiyi He, Mengxuan Xu

Abstract:

Plastic scintillators play an important role in the measurement of a mixed neutron/gamma pulsed radiation, neutron radiography and pulse shape discrimination technology. In some research, these luminescent properties are necessary that photons produced by the interactions between a plastic scintillator and radiations can be detected as much as possible by the photoelectric detectors and more photons can be emitted from the scintillators along a specific direction where detectors are located. Unfortunately, a majority of these photons produced are trapped in the plastic scintillators due to the total internal reflection (TIR), because there is a significant light-trapping effect when the incident angle of internal scintillation light is larger than the critical angle. Some of these photons trapped in the scintillator may be absorbed by the scintillator itself and the others are emitted from the edges of the scintillator. This makes the light extraction of plastic scintillators very low. Moreover, only a small portion of the photons emitted from the scintillator easily can be detected by detectors effectively, because the distribution of the emission directions of this portion of photons exhibits approximate Lambertian angular profile following a cosine emission law. Therefore, enhancing the light extraction efficiency and adjusting the emission angular profile become the keys for improving the number of photons detected by the detectors. In recent years, photonic crystal structures have been covered on inorganic scintillators to enhance the light extraction efficiency and adjust the angular profile of scintillation light successfully. However, that, preparation methods of photonic crystals will deteriorate performance of plastic scintillators and even destroy the plastic scintillators, makes the investigation on preparation methods of photonic crystals for plastic scintillators and luminescent properties of plastic scintillators with photonic crystal structures inadequate. Although we have successfully made photonic crystal structures covered on the surface of plastic scintillators by a modified self-assembly technique and achieved a great enhance of light extraction efficiency without evident angular-dependence for the angular profile of scintillation light, the preparation of photonic crystal structures with large area (the diameter is larger than 6cm) and perfect periodic structure is still difficult. In this paper, large area photonic crystals on the surface of scintillators were prepared by nanoimprint lithography firstly, and then a conformal layer with material of high refractive index on the surface of photonic crystal by atomic layer deposition technique in order to enhance the stability of photonic crystal structures and increase the number of leaky modes for improving the light extraction efficiency. The luminescent properties of the plastic scintillator with photonic crystals prepared by the mentioned method are compared with those of the plastic scintillator without photonic crystal. The results indicate that the number of photons detected by detectors is increased by the enhanced light extraction efficiency and the angular profile of scintillation light exhibits evident angular-dependence for the scintillator with photonic crystals. The mentioned preparation of photonic crystals is beneficial to scintillation detection applications and lays an important technique foundation for the plastic scintillators to meet special requirements under different application backgrounds.

Keywords: angular profile, atomic layer deposition, light extraction efficiency, plastic scintillator, photonic crystal

Procedia PDF Downloads 163

Authors: Edwina G. Rodrigues, S. J. Bindhu, A. V. Rajesh

Abstract:

This paper proposes a switched capacitor based driver circuit for high power light emitting diodes with a front end rectifier. LEDs are low-voltage light sources, requiring a constant DC voltage or current to operate optimally. LEDs, therefore, require a device that can convert incoming AC power to the proper DC voltage, and regulate the current flowing through the LED during operation. Proposed topology has a front end converter. It is an AC-DC rectifier that works on bridgeless boost topology which shapes the input current waveform. The front end converter is followed by a DC-DC converter which provides a constant DC voltage across the LEDs. A 12V AC input is given to the input of frontend converter which rectifies and boost the voltage to 24v DC and gives it to the DC-DC converter. The DC-DC converter converts the 24V DC and regulates this constant DC voltage across the LEDs.

Keywords: bridgeless rectifier, power factor correction(PFC), SC converter, total harmonic distortion (THD)

Procedia PDF Downloads 835