Search results for: DC High Voltage Insulation Current

Authors: Inseok Yeo, Tae-Ho Song

Abstract:

To practically apply vacuum insulation panels (VIPs) to buildings or home appliances, VIPs have demanded long-term lifespan with outstanding insulation performance. Service lives of VIPs enveloped with Al-foil and three-layer Al-metallized envelope are calculated. For Al-foil envelope, the service life is longer but edge conduction is too large compared with the Al metallized envelope. To increase service life even more, the proposed double enveloping method and metal-barrier-added enveloping method are further analyzed. The service lives of the VIP to employ two enveloping methods are calculated. Also, pressure increase and thermal insulation performance characteristics are investigated. For the metal- barrier-added enveloping method, effective thermal conductivity increase with time is close to that of Al-foil envelope, especially, for getter-inserted VIPs. For the double enveloping method, if water vapor is perfectly adsorbed, the effect of service life enhancement becomes much greater. From these methods, the VIP can be guaranteed for the service life of more than 20 years.

Keywords: vacuum insulation panels, service life, double enveloping, metal-barrier-added enveloping, edge conduction

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Authors: S. Ozeri, D. Shmilovitz

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Micro‐Turbine Generators (MTG) are small size power plants that consist of a high speed, gas turbine driving an electrical generator. MTGs may be fueled by either natural gas or kerosene and may also use sustainable and recycled green fuels such as biomass, landfill or digester gas. The typical ratings of MTGs start from 20 kW up to 200 kW. The primary use of MTGs is for backup for sensitive load sites such as hospitals, and they are also considered a feasible power source for Distributed Generation (DG) providing on-site generation in proximity to remote loads. The MTGs have the compressor, the turbine, and the electrical generator mounted on a single shaft. For this reason, the electrical energy is generated at high frequency and is incompatible with the power grid. Therefore, MTGs must contain, in addition, a power conditioning unit to generate an AC voltage at the grid frequency. Presently, this power conditioning unit consists of a rectifier followed by a DC/AC inverter, both rated at the full MTG’s power. The losses of the power conditioning unit account to some 3-5%. Moreover, the full-power processing stage is a bulky and costly piece of equipment that also lowers the overall system reliability. In this study, we propose a new type of power conditioning stage in which only a small fraction of the power is processed. A low power converter is used only to program the rotor current (i.e. the excitation current which is substantially lower). Thus, the MTG's output voltage is shaped to the desired amplitude and frequency by proper programming of the excitation current. The control is realized by causing the rotor current to track the electrical frequency (which is related to the shaft frequency) with a difference that is exactly equal to the line frequency. Since the phasor of the rotation speed and the phasor of the rotor magnetic field are multiplied, the spectrum of the MTG generator voltage contains the sum and the difference components. The desired difference component is at the line frequency (50/60 Hz), whereas the unwanted sum component is at about twice the electrical frequency of the stator. The unwanted high frequency component can be filtered out by a low-pass filter leaving only the low-frequency output. This approach allows elimination of the large power conditioning unit incorporated in conventional MTGs. Instead, a much smaller and cheaper fractional power stage can be used. The proposed technology is also applicable to other high rotation generator sets such as aircraft power units.

Keywords: gas turbine, inverter, power multiplier, distributed generation

Procedia PDF Downloads 211

Authors: W. J. Stępniowski, W. Florkiewicz, M. Norek, M. Michalska-Domańska, E. Kościuczyk, T. Czujko

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In this paper, two options of anodic alumina barrier layer thinning have been demonstrated. The approaches varied with the duration of the voltage step. It was found that too long step of the barrier layer thinning process leads to chemical etching of the nanopores on their top. At the bottoms pores are not fully opened what is disadvantageous for further applications in nanofabrication. On the other hand, while the duration of the voltage step is controlled by the current density (value of the current density cannot exceed 75% of the value recorded during previous voltage step) the pores are fully opened. However, pores at the bottom obtained with this procedure have smaller diameter, nevertheless this procedure provides electric contact between the bare aluminum (substrate) and electrolyte, what is suitable for template assisted electrodeposition, one of the most cost-efficient synthesis method in nanotechnology.

Keywords: anodic aluminum oxide, anodization, barrier layer thinning, nanopores

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Authors: Z. Kourdi, B. Bouazza, M. Khaouani, A. Guen-Bouazza, Z. Djennati, A. Boursali

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We present a simulation of a HEMT (high electron mobility transistor) structure with and without a field plate. We extract the device characteristics through the analysis of DC, AC and high frequency regimes, as shown in this paper. This work demonstrates the optimal device with a gate length of 15 nm, InAlN/GaN heterostructure and field plate structure, making it superior to modern HEMTs when compared with otherwise equivalent devices. This improves the ability to bear the burden of the current density passes in the channel. We have demonstrated an excellent current density, as high as 2.05 A/mm, a peak extrinsic transconductance of 590 mS/mm at VDS=2 V, and cutting frequency cutoffs of 638 GHz in the first HEMT and 463 GHz for Field plate HEMT., maximum frequency of 1.7 THz, maximum efficiency of 73%, maximum breakdown voltage of 400 V, DIBL=33.52 mV/V and an ON/OFF current density ratio higher than 1 x 1010. These values were determined through the simulation by deriving genetic and Monte Carlo algorithms that optimize the design and the future of this technology.

Keywords: HEMT, Silvaco, field plate, genetic algorithm, quantum

Procedia PDF Downloads 441

Authors: Deepika Sharma, Bal Krishan

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In this paper, the structure of N-channel VDMOS was designed and analyzed using Silvaco TCAD tools by varying N+ source doping concentration, P-Body doping concentration, gate oxide thickness and the diffuse time. VDMOS is considered to be ideal power switches due to its high input impedance and fast switching speed. The performance of the device was analyzed from the Ids vs Vgs curve. The electrical characteristics such as threshold voltage, gate oxide thickness and breakdown voltage for the proposed device structures were extarcted. Effect of epitaxial layer on various parameters is also observed.

Keywords: on-resistance, threshold voltage, epitaxial layer, breakdown voltage

Procedia PDF Downloads 295

Authors: V. S. Klimash, Ye Min Thu

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Thyristor rectifiers, inverters grid-tied, and AC voltage regulators are widely used in industry, and on electrified transport, they have a lot in common both in the power circuit and in the control system. They have a common mathematical structure and switching processes. At the same time, the rectifier, but the inverter units and thyristor regulators of alternating voltage are considered separately both theoretically and practically. They are written about in different books as completely different devices. The aim of this work is to combine them into one class based on the unity of the equations describing electromagnetic processes, and then, to show this unity on the mathematical model and experimental setup. Based on research from mathematics to the product, a conclusion is made about the methodology for the rapid conduct of research and experimental design work, preparation for production and serial production of converters with a unified bundle. In recent years, there has been a transition from thyristor circuits and transistor in modular design. Showing the example of thyristor rectifiers and AC voltage regulators, we can conclude that there is a unity of mathematical structures and grid-tied thyristor converters.

Keywords: direct current, alternating current, rectifier, AC voltage regulator, generalized mathematical model

Procedia PDF Downloads 228

Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

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This paper discusses the undesirable charge transfer through the parasitic capacitances of the input transistors in a multi-inputs voltage sense amplifier. Its intrinsic rail-to-rail voltage transitions at the output nodes inevitably disturb the input sides through the capacitive coupling between the outputs and inputs. Then, it can possible degrade the stabilities of the reference voltage levels. Moreover, it becomes more serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the overall systems. In order to alleviate the internal node voltage transition, the internal node stabilization techniques are proposed. It achieves 45% and 40% improvements for node stabilization and input referred disturbance, respectively.

Keywords: voltage sense amplifier, multi-inputs, voltage transition, node stabilization, biasing circuits

Procedia PDF Downloads 529

Authors: Easa Ali Abbasi, Akbar Allahverdizadeh, Reza Jahangiri, Behnam Dadashzadeh

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Electrical current measurement is a suitable method for the performance determination of electrical devices. There are two contact and noncontact methods in this measuring process. Contact method has some disadvantages like having direct connection with wire which may endamage the system. Thus, in this paper, a bimorph piezoelectric cantilever beam which has a permanent magnet on its free end is used to measure electrical current in a noncontact way. In mathematical modeling, based on Galerkin method, the governing equation of the cantilever beam is solved, and the equation presenting the relation between applied force and beam’s output voltage is presented. Magnetic force resulting from current carrying wire is considered as the external excitation force of the system. The results are compared with other references in order to demonstrate the accuracy of the mathematical model. Finally, the effects of geometric parameters on the output voltage and natural frequency are presented.

Keywords: cantilever beam, electrical current measurement, forced excitation, piezoelectric

Procedia PDF Downloads 198

Authors: Jun-Geol Park, Kyoung-Il Do, Min-Ju Kwon, Kyung-Hyun Park, Yong-Seo Koo

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In this paper, we proposed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuit for latch-up immunity. The proposed circuit has a lower trigger voltage and a higher holding voltage characteristic by using the zener diode structure. These characteristics prevent latch-up problem in normal operating conditions. The proposed circuit was analyzed to figure out the electrical characteristics by the variations of design parameters D1, D2 and stack technology to obtain the n-fold electrical characteristics. The simulations are accomplished by using the Synopsys TCAD simulator. When using the stack technology, 2-stack has the holding voltage of 6.9V and 3-stack has the holding voltage of 10.9V.

Keywords: ESD, SCR, trigger voltage, holding voltage

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Authors: Shao-Ku Kao

Abstract:

This paper presents an active rectifier with time-domain delay compensation to enhance the efficiency. A delay calibration circuit is designed to convert delay time to voltage and adaptive control on/off delay in variable input voltage. This circuit is designed in 0.18 mm CMOS process. The input voltage range is from 2 V to 3.6 V with the output voltage from 1.8 V to 3.4 V. The efficiency can maintain more than 85% when the load from 50 Ω ~ 1500 Ω for 3.6 V input voltage. The maximum efficiency is 92.4 % at output power to be 38.6 mW for 3.6 V input voltage.

Keywords: wireless power transfer, active diode, delay compensation, time to voltage converter, PCE

Procedia PDF Downloads 247

Authors: Birinderjit Singh Kalyan, Inderpreet Kaur, Balwinder Singh Sohi

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In this paper, an equivalent model for floating gate transistor has been proposed. Using the floating gate voltage value, capacitive coupling coefficients has been found at different bias conditions. The amount of charge present on the gate has been then calculated using the transient models of hot electron programming and Fowler-Nordheim Tunnelling. The proposed model can be extended to the transient conditions as well. The SPICE equivalent model is designed and current-voltage characteristics and Transfer characteristics are comparatively analysed. The dc current-voltage characteristics, as well as dc transfer characteristics, have been plotted for an FGMOS with W/L=0.25μm/0.375μm, the inter-poly capacitance of 0.8fF for both programmed and erased states. The Comparative analysis has been made between the present model and capacitive coefficient coupling methods which were already available.

Keywords: FGMOS, floating gate transistor, capacitive coupling coefficient, SPICE model

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Authors: Jitendra Kumar Quamara, Sohan Lal, Pushkar Raj

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Electrical conduction behavior of liquid crystalline polyurethane (LCPU) has been investigated under transient conditions in the operating temperature range 50-220°C at various electric fields of 4.35-43.45 kV/cm. The transient currents show the hyperbolic decay character and the decay exponent ∆t (one tenth decay time) dependent on field as well as on temperature. The increase in I0/Is values (where I0 represents the current observed immediately after applying the voltage and Is represents the steady state current) and the variation of mobility at high operating temperatures shows the appearance of mesophase. The origin of transient currents has been attributed to the dipolar nature of carbonyl (C＝O) groups in the main chain of LCPU and the trapping charge carriers.

Keywords: electrical conduction, transient current, liquid crystalline polymers, mesophase

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Authors: H. Paredes Gutiérrez, S. T. Pérez-Merchancano

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Motivated by recent experimental and theoretical developments, we investigate the influence of embedded quantum dot (EQD) of different geometries (lens, ring and pyramidal) in a double barrier heterostructure (DBH). We work with a general theory of quantum transport that accounts the tight-binding model for the spin dependent resonant tunneling in a semiconductor nanostructure, and Rashba spin orbital to study the spin orbit coupling. In this context, we use the second quantization theory for Rashba effect and the standard Green functions method. We calculate the current density as a function of the voltage without and in the presence of quantum dots. In the second case, we considered the size and shape of the quantum dot, and in the two cases, we worked considering the spin polarization affected by external electric fields. We found that the EQD generates significant changes in current when we consider different morphologies of EQD, as those described above. The first thing shown is that the current decreases significantly, such as the geometry of EQD is changed, prevailing the geometrical confinement. Likewise, we see that the current density decreases when the voltage is increased, showing that the quantum system studied here is more efficient when the morphology of the quantum dot changes.

Keywords: quantum semiconductors, nanostructures, quantum dots, spin polarization

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Authors: Hassan Jassim Motlak

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A novel design technique employing CMOS Current Feedback Operational Amplifier (CFOA) is presented. The feature of consumption whivh has a very low power in designing pseudo-OTA is used to decreasing the total power consumption of the proposed CFOA. This design approach applies pseudo-OTA as input stage cascaded with buffer stage. Moreover, the DC input offset voltage and harmonic distortion (HD) of the proposed CFOA are very low values compared with the conventional CMOS CFOA due to symmetrical input stage. P-Spice simulation results using 0.18µm MIETEC CMOS process parameters using supply voltage of ±1.2V and 50μA biasing current. The P-Spice simulation shows excellent improvement of the proposed CFOA over existing CMOS CFOA. Some of these performance parameters, for example, are DC gain of 62. dB, open-loop gain-bandwidth product of 108 MHz, slew rate (SR+) of +71.2V/µS, THD of -63dB and DC consumption power (PC) of 2mW.

Keywords: pseudo-OTA used CMOS CFOA, low power CFOA, high-performance CFOA, novel CFOA

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Authors: N. Ravikumar, S. Krishnan, B. Yokeshkumar

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In present days, the power quality issues are increases due to non-linear loads like fridge, AC, washing machines, induction motor, etc. This power quality issues will affects the output voltages, output current, and output power of the total performance of the generator. This paper explains how to test the generator using the Fluke 435 II series power quality analyser. This Fluke 435 II series power quality analyser is used to measure the voltage, current, power, energy, total harmonic distortion (THD), current harmonics, voltage harmonics, power factor, and frequency. The Fluke 435 II series power quality analyser have several advantages. They are i) it will records output in analog and digital format. ii) the fluke analyzer will records at every 0.25 sec. iii) it will also measure all the electrical parameter at a time.

Keywords: THD, harmonics, power quality, TNEB, Fluke 435

Procedia PDF Downloads 153

Authors: Shivarudraswamy, Anubhav Shrivastava, Lakshya Bhat

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Distributed generation has indeed become a major area of interest in recent years. Distributed Generation can address large number of loads in a power line and hence has better efficiency over the conventional methods. However there are certain drawbacks associated with it, increase in voltage being the major one. This paper addresses the voltage control at the buses for an IEEE 30 bus system by regulating reactive power. For carrying out the analysis, the suitable location for placing distributed generators (DG) is identified through load flow analysis and seeing where the voltage profile is dipping. MATLAB programming is used to regulate the voltage at all buses within +/-5% of the base value even after the introduction of DG’s. Three methods for regulation of voltage are discussed. A sensitivity based analysis is later carried out to determine the priority among the various methods listed in the paper.

Keywords: distributed generators, distributed system, reactive power, voltage control

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Authors: Elmo Thiago Lins Cöuras Ford, Valentina Alessandra Carvalho do Vale, Rubens Maribondo do Nascimento, José Ubiragi de Lima Mendes

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Recycling has been greatly stimulated by the market. There are already several products that are produced with recycled materials and various wastes have been studied in various forms of applications. The vast majority of insulation applications in domestic, commercial and industrial systems in the range of low and medium temperatures (up to 180 ° C), using the aggressive nature materials such as glass wool, rock wool, polyurethane, polystyrene. Such materials, while retaining the effectiveness of the heat flux, are disposed as expensive and take years too absorbed by nature. Thus, trying to adapt to a global policy on the preservation of the environment, a study in order to develop an insulating compound of natural / industrial waste and biodegradable materials conducted. Thus, this research presents the development of a composite material based zest tire and latex for thermal and electrical insulation.

Keywords: composite, latex, scrapes tire, insulation, electrical

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Authors: Hassan Saffari;, Reza Askari Moghadam

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In modern communication systems, it is highly demanded to achieve high performance with minimal power consumption. Low actuation voltage RF MEMS (Micro-Electro-Mechanical Systems) switches represent a significant advancement in this regard. These switches, with their ability to operate at lower voltages, offer promising solutions for enhancing connectivity while minimizing energy consumption. Microelectromechanical switches are good alternatives for electronic and mechanical switches due to their low insertion loss, high isolation, and fast switching speeds. They have attracted more attention in recent years. Most of the presented RF MEMS switches use electrostatic actuators due to their low power consumption. Low actuation voltage RF MEMS switches are among the important issues that have been investigated in research articles. The actuation voltage can be reduced by different methods. One usually implemented method is low spring constant structures. However, despite their numerous benefits, challenges remain in the widespread adoption of low-actuation voltage RF MEMS switches. Issues related to reliability, durability, and manufacturing scalability need to be addressed to realize their full potential in commercial applications. While overcoming certain challenges, their exceptional performance characteristics and compatibility with miniaturized electronic systems make them a promising choice for next-generation wireless communication and RF applications. In this paper, some previous works that proposed low-voltage actuation RF MEMS switches are investigated and analyzed.

Keywords: RF MEMS switches, low actuation voltage, small spring constant structures, electrostatic actuation

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Authors: Ajay Kumar, Neha Gupta

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This work presents the sensitivity assessment of Gallium Nitride (GaN) material-based FinFET by dielectric modulation in the nanocavity gap for label-free biosensing applications. The significant deflection is observed in the electrical characteristics such as drain current (ID), transconductance (gm), surface potential, energy band profile, electric field, sub-threshold slope (SS), and threshold voltage (Vth) in the presence of biomolecules owing to GaN material. Further, the device sensitivity is evaluated to identify the effectiveness of the proposed biosensor and its capability to detect the biomolecules with high precision or accuracy. Higher sensitivity is observed for Gelatin (k=12) in terms of on-current (SION), threshold voltage (SVth), and switching ratio (SSR) by 104.88%, 82.12%, and 119.73%, respectively. This work is performed using a powerful tool 3D Sentaurus TCAD using a well-calibrated structure. All the results pave the way for GaN-FinFET as a viable candidate for label-free dielectric modulated biosensor applications.

Keywords: biosensor, biomolecules, FinFET, sensitivity

Procedia PDF Downloads 159

Authors: Ivanova B. Natalia, Djambova Т. Svetlana, Hristev S. Ivailo

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The acoustic properties of recycled felt panels have been investigated using various methods. Experimentally, the sound insulation of the panels has been evaluated for frequencies in the range of 600 Hz to 4000 Hz, utilizing a small-sized acoustic chamber. Additionally, the sound absorption coefficient for the frequency range of 63 Hz to 4000 Hz was measured according to the EN ISO 354 standard in a laboratory reverberation room. This research was deemed necessary after conducting reverberation time measurements of a university classroom following the EN ISO 3382-2 standard. The measurements indicated values of 2.86 s at 500 Hz, 3.23 s at 1000 Hz, and 2.53 s at 2000 Hz, which significantly exceeded the requirements set by the national regulatory framework (0.6s) for such premises. For this reason, recycled felt panels have been investigated in the laboratory, showing very good acoustic properties at high frequencies. To enhance performance in the low frequencies, the influence of the distance of the panel spacing was examined. Furthermore, the sound insulation of the panels was studied to expand the possibilities of their application, both for the acoustic treatment of educational and multifunctional halls and for sound insulation purposes (e.g., a suspended ceiling with an air gap passing from room to room). As a conclusion, a theoretical acoustic design of the classroom has been carried out with suggestions for improvements to achieve the necessary acoustic and aesthetic parameters for such rooms.

Keywords: acoustic panels, recycled felt, sound absorption, sound insulation, classroom acoustics

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Authors: Dominic Huschke, Rudolf Keil

Abstract:

New driving functionalities like highly automated driving have a major impact on the electrics/electronics architecture of future vehicles and inevitably lead to higher safety requirements. Partly due to these increased requirements, the vehicle industry is increasingly looking at semiconductor switches as an alternative to conventional melting fuses. The protective functionality of semiconductor switches can be implemented in hardware as well as in software. A current approach discussed in science and industry is the implementation of a model of the protected low voltage power cable on a microcontroller to calculate its temperature. Here, the information regarding the current is provided by the continuous current measurement of the semiconductor switch. The signal to open the semiconductor switch is provided by the microcontroller when a previously defined limit for the temperature of the low voltage power cable is exceeded. A setup for the testing of the described principle for electronic fuse protection of a low voltage power cable is built and successfullyvalidated with experiments afterwards. Here, the evaluation criterion is the deviation of the measured temperature of the low voltage power cable from the specified limit temperature when the semiconductor switch is opened. The analysis is carried out with an assumed ambient temperature as well as with a measured ambient temperature. Subsequently, the experimentally performed investigations are simulated in a virtual environment. The explicit focus is on the simulation of the behavior of the microcontroller with an implemented model of a low voltage power cable in a real-time environment. Subsequently, the generated results are compared with those of the experiments. Based on this, the completely virtual design of the described approach is assumed to be valid.

Keywords: automotive wire harness, electronic fuse protection, low voltage power cable, semiconductor-based fuses, software-based validation

Procedia PDF Downloads 81

Authors: Mohamed E. Harb, Enas Moustafa, Shaker Ebrahim, Moataz Soliman

Abstract:

In this paper pressure detectors were synthesized and characterized using hybrid perovskite/PVDF composites as an active layer. Methylammonium lead iodide (MAPbI₃) was synthesized from methylammonium iodide (MAI) (CH₃NH₃I) and lead iodide (PbI₂). Composites of perovskite/PVDF using different weight ratio were prepared as the active material. PVDF with weights percentages of 6%, 8%, and 10% was used. All prepared materials were investigated by x-ray diffraction (XRD), Fourier transforms infrared spectrum (FTIR) and scanning electron microscopy (SEM). A Versastat 4 Potentiostat Galvanostat instrument was used to perform the current-voltage characteristics of the fabricated sensors. The pressure sensors exhibited a voltage increase with applying different forces. Also, the current-voltage characteristics (CV) showed different effects with applying forces. So, the results showed a good pressure sensing performance.

Keywords: perovskite semiconductor, hybrid perovskite, PVDF, Pressure sensing

Procedia PDF Downloads 173

Authors: Mazen Al-Bulaihed, Nissar Wani, Abdulrahman Al-Arainy, Yasin Khan

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Partial Discharge (PD) measurements are widely used for diagnostic purposes in electrical equipment used in power systems. The main cause of these measurements is to prevent large power failures as cables are prone to aging, which usually results in embrittlement, cracking and eventual failure of the insulating and sheathing materials, exposing the conductor and risking a potential short circuit, a likely cause of the electrical fire. Many distribution networks rely heavily on medium voltage (MV) power cables. The presence of joints in these networks is a vital part of serving the consumer demand for electricity continuously. Such measurements become even more important when the extent of dependence increases. Moreover, it is known that the partial discharge in joints and termination are difficult to track and are the most crucial point of failures in large power systems. This paper discusses the diagnostic techniques of four samples of XLPE insulated cable joints, each included with a different type of defect. Experiments were carried out by measuring PD and tanδ at very low frequency applied high voltage. The results show the importance of combining PD and tanδ for effective cable assessment.

Keywords: partial discharge, tan delta, very low frequency, XLPE cable

Procedia PDF Downloads 128

Authors: Fatima Zohra Rahou, A.Guen Bouazza, B. Bouazza

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SOI TRI GATE FinFET transistors have emerged as novel devices due to its simple architecture and better performance: better control over short channel effects (SCEs) and reduced power dissipation due to reduced gate leakage currents. As the oxide thickness scales below 2 nm, leakage currents due to tunneling increase drastically, leading to high power consumption and reduced device reliability. Replacing the SiO2 gate oxide with a high-κ material allows increased gate capacitance without the associated leakage effects. In this paper, SOI TRI-GATE FinFET structure with use of high K dielectric materials (HfO2) and SiO2 dielectric are simulated using the 3-D device simulator Devedit and Atlas of TCAD Silvaco. The simulated results exhibits significant improvements in the performances of SOI TRI GATE FinFET with gate oxide HfO2 compared with conventional gate oxide SiO2 for the same structure. SOI TRI-GATE FinFET structure with the use of high K materials (HfO2) in gate oxide results into the increase in saturation current, threshold voltage, on-state current and Ion/Ioff ratio while off-state current, subthreshold slope and DIBL effect are decreased.

Keywords: technology SOI, short-channel effects (SCEs), multi-gate SOI MOSFET, SOI-TRI Gate FinFET, high-K dielectric, Silvaco software

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Authors: Syakirin O. Yong, Nasrudin A. Rahim, Bilal M. Eid, Buray Tankut

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The aim of this paper is to develop an ultra-fast gate driver for Silicon Carbide (SiC) based switching device applications such as AC/DC DC/AC converters. Wide bandgap semiconductors such as SiC switches are growing rapidly nowadays due to their numerous capabilities such as faster switching, higher power density and higher voltage level. Wide band-gap switches can work properly on high frequencies such 50-250 kHz which is very useful for many power electronic applications such as solar inverters. Increasing the frequency minimizes the output filter size and system complexity however, this causes huge spike between MOSFET’s drain and source leg which leads to the failure of MOSFET if the voltage rating is exceeded. This paper investigates and concludes the optimum design for a gate drive board for SiC MOSFET switches without causing spikes and noises.

Keywords: PV system, lithium-ion, charger, constant current, constant voltage, renewable energy

Procedia PDF Downloads 126

Authors: Paul Henshall, Philip Eames, Roger Moss, Stan Shire, Farid Arya, Trevor Hyde

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Encapsulating the absorber of a flat plate solar thermal collector in vacuum by an enclosure that can be evacuated can result in a significant increase in collector performance and achievable operating temperatures. This is a result of the thermal insulation effectiveness of the vacuum layer surrounding the absorber, as less heat is lost during collector operation. This work describes experimental thermal insulation characterization tests of prototype vacuum flat plate solar thermal collectors that demonstrate the improvement in absorber heat loss coefficients. Furthermore, this work describes the selection and sizing of a getter, suitable for maintaining the vacuum inside the enclosure for the lifetime of the collector, which can be activated at low temperatures.

Keywords: vacuum, thermal, flat-plate solar collector, insulation

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Authors: Jitka Hroudova, Jiri Zach

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The majority of contemporary insulation materials commonly used in the building industry is made from non-renewable raw materials; furthermore, their production often brings high energy costs. A long-term trend as far as sustainable development is concerned has been the reduction of energy and material demands of building material production. One of the solutions is the possibility of using easily renewable natural raw material sources which are considerably more ecological and their production is mostly less energy-consuming compared to the production of normal insulations (mineral wool, polystyrene). The paper describes the results of research focused on the development of thermal and acoustic insulation materials based on natural fibres intended for floor constructions. Given the characteristic open porosity of natural fibre materials, the hygrothermal behaviour of the developed materials was studied. Especially the influence of relative humidity and temperature on thermal insulation properties was observed.

Keywords: Green thermal and acoustic insulating materials, natural fibres, technical hemp, flax, floor construction

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Authors: Xiaohui Wang, Liwei Sun, Guilin Zhang

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Printed circuit board (PCB) is the carrier of electronic components. Its coating is the first barrier for protecting itself. If the coating is damaged, the performance of printed circuit board will decrease rapidly until failure. Therefore, the coating plays an important role in the entire printed circuit board. There are common four kinds of coating of printed circuit board that the material of the coatings are paryleneC, acrylic, polyurethane, silicone. In this paper, we designed an accelerated degradation test of humid and heat for these four kinds of coating. And chose insulation resistance, moisture absorption and surface morphology as its test indexes. By comparing the change of insulation resistance of the coating before and after the test, we estimate failure time of these coatings based on the degradation of insulation resistance. Based on the above, we estimate the service life of the four kinds of PCB.

Keywords: printed circuit board, life assessment, insulation resistance, coating material

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Authors: Fang Liu, Jia Jia Yao, Guan Lin Wu, Ren Jie Liu, Zhuang Guo

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Leveraging plasma-assisted molecular beam epitaxy (PA-MBE) on c-plane free-standing GaN substrates, this work demonstrates high-performance AlN/GaN double-barrier resonant tunneling diodes (RTDs) featuring stable and repeatable negative differential resistance (NDR) characteristics at room temperature. By scaling down the barrier thickness of AlN and the lateral mesa size of collector, a record peak current density of 1551 kA/cm2 is achieved, accompanied by a peak-to-valley current ratio (PVCR) of 1.24. This can be attributed to the reduced resonant tunneling time under thinner AlN barrier and the suppressed external incoherent valley current by reducing the dislocation number contained in the RTD device with the smaller size of collector. Statistical analysis of the NDR performance of RTD devices with different AlN barrier thicknesses reveals that, as the AlN barrier thickness decreases from 1.5 nm to 1.25 nm, the average peak current density increases from 145.7 kA/cm2 to 1215.1 kA/cm2, while the average PVCR decreases from 1.45 to 1.1, and the peak voltage drops from 6.89 V to 5.49 V. The peak current density obtained in this work represents the highest value reported for nitride-based RTDs to date, while maintaining a high PVCR value simultaneously. This illustrates that an ultra-scaled RTD based on a vertical quantum-well structure and lateral collector size is a valuable approach for the development of nitride-based RTDs with excellent NDR characteristics, revealing their great potential applications in high-frequency oscillation sources and high-speed switch circuits.

Keywords: GaN resonant tunneling diode, peak current density, peak-to-valley current ratio, negative differential resistance

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Authors: Orose Rugchati, Kanita Thanacharoenchanaphas, Sarawut Wattanawongpitak

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In this study, the effect of electric stimulation on the quality of hot-boned beef brisket muscles was evaluated, including the tenderness, pH, temperature change, and colorant. Muscles were obtained from steers in the local slaughter house. (3 steers for each muscle), removed from the carcasses 4-hour postmortem and variable time to treated with direct current electric 1 and 5 minutes, respectively. Six different electric intensities (direct current voltage of 50, 70 and 90 Volt, pulse with 10, 20 and 40 ms) plus a control were applied to each muscle to determine the optimum treatment conditions. Hot-boned beef brisket was found to get tender with increasing treatment direct current voltage and reduction in the shear force with pulsed with electric treatment. But in a long time to treated with electric current get fading in red color and temperature increase whereas pH quite different compared to non-treated control samples.

Keywords: electric stimulation, characteristic changes, hot-boned beef brisket, potential tenderness

Procedia PDF Downloads 311