Search results for: gate capacitance
333 Environmental Impact of Gas Field Decommissioning
Authors: Muhammad Ahsan
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The effective decommissioning of oil and gas fields and related assets is one of the most important challenges facing the oil and gas industry today and in the future. Decommissioning decisions can no longer be avoided by the operators and the industry as a whole. Decommissioning yields no return on investment and carries significant regulatory liabilities. The main objective of this paper is to provide an approach and mechanism for the estimation of emissions associated with decommissioning of Oil and Gas fields. The model uses gate to gate approach and considers field life from development phase up to asset end life. The model incorporates decommissioning processes which includes; well plugging, plant dismantling, wellhead, and pipeline dismantling, cutting and temporary fabrication, new manufacturing from raw material and recycling of metals. The results of the GHG emissions during decommissioning phase are 2.31x10-2 Kg CO2 Eq. per Mcf of the produced natural gas. Well plug and abandonment evolved to be the most GHG emitting activity with 84.7% of total field decommissioning operational emissions.Keywords: LCA (life cycle analysis), gas field, decommissioning, emissions
Procedia PDF Downloads 187332 Advanced Combinatorial Method for Solving Complex Fault Trees
Authors: José de Jesús Rivero Oliva, Jesús Salomón Llanes, Manuel Perdomo Ojeda, Antonio Torres Valle
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Combinatorial explosion is a common problem to both predominant methods for solving fault trees: Minimal Cut Set (MCS) approach and Binary Decision Diagram (BDD). High memory consumption impedes the complete solution of very complex fault trees. Only approximated non-conservative solutions are possible in these cases using truncation or other simplification techniques. The paper proposes a method (CSolv+) for solving complex fault trees, without any possibility of combinatorial explosion. Each individual MCS is immediately discarded after its contribution to the basic events importance measures and the Top gate Upper Bound Probability (TUBP) has been accounted. An estimation of the Top gate Exact Probability (TEP) is also provided. Therefore, running in a computer cluster, CSolv+ will guarantee the complete solution of complex fault trees. It was successfully applied to 40 fault trees from the Aralia fault trees database, performing the evaluation of the top gate probability, the 1000 Significant MCSs (SMCS), and the Fussell-Vesely, RRW and RAW importance measures for all basic events. The high complexity fault tree nus9601 was solved with truncation probabilities from 10-²¹ to 10-²⁷ just to limit the execution time. The solution corresponding to 10-²⁷ evaluated 3.530.592.796 MCSs in 3 hours and 15 minutes.Keywords: system reliability analysis, probabilistic risk assessment, fault tree analysis, basic events importance measures
Procedia PDF Downloads 47331 An Approach for Modeling CMOS Gates
Authors: Spyridon Nikolaidis
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A modeling approach for CMOS gates is presented based on the use of the equivalent inverter. A new model for the inverter has been developed using a simplified transistor current model which incorporates the nanoscale effects for the planar technology. Parametric expressions for the output voltage are provided as well as the values of the output and supply current to be compatible with the CCS technology. The model is parametric according the input signal slew, output load, transistor widths, supply voltage, temperature and process. The transistor widths of the equivalent inverter are determined by HSPICE simulations and parametric expressions are developed for that using a fitting procedure. Results for the NAND gate shows that the proposed approach offers sufficient accuracy with an average error in propagation delay about 5%.Keywords: CMOS gate modeling, inverter modeling, transistor current mode, timing model
Procedia PDF Downloads 423330 Carbon Coated Yarn Supercapacitors: Parametric Study of Performance Output
Authors: Imtiaz Ahmed Khan, Sabu John, Sania Waqar, Lijing Wang, Mac Fergusson, Ilija Najdovski
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Evolution of textiles, from its orthodox to more interactive role has stirred the researchers to uncover its application in numerous arenas. The idea of using textile based materials for wearable energy harvesting and storage devices have gained immense popularity. This is mainly due to textile comfort and flexibility features. In this work, nano-carbonous materials were infused on cellulosic fibers using caustic soda treatment. This paper presents the complete procedure of yarn supercapacitors fabrication process through dip coating technique and its characterization method. The main objective is to study, the effect of varying caustic soda concentration on mass loading of activated carbon on yarns and the related capacitance output of the designed yarn supercapacitor. Polyvinyl alcohol and Phosphoric acid were used as electrolyte in a two-electrode cell assembly to measure device electrochemical performance. The results show a promising increase in capacitance value using this technique.Keywords: yarn supercapacitors, activated carbon, dip coating, caustic soda, electrolyte, electrochemical characterization
Procedia PDF Downloads 464329 Design and Analysis of Highly Efficient and Reliable Single-Phase Transformerless Inverter for PV Systems
Authors: L. Ashok Kumar, N. Sujith Kumar
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Most of the PV systems are designed with transformer for safety purpose with galvanic isolation. However, the transformer is big, heavy and expensive. Also, it reduces the overall frequency of the conversion stage. Generally PV inverter with transformer is having efficiency around 92%–94% only. To overcome these problems, transformerless PV system is introduced. It is smaller, lighter, cheaper and higher in efficiency. However, dangerous leakage current will flow between PV array and the grid due to the stray capacitance. There are different types of configurations available for transformerless inverters like H5, H6, HERIC, oH5, and Dual paralleled buck inverter. But each configuration is suffering from its own disadvantages like high conduction losses, shoot-through issues of switches, dead-time requirements at zero crossing instants of grid voltage to avoid grid shoot-through faults and MOSFET reverse recovery issues. The main objective of the proposed transformerless inverter is to address two key issues: One key issue for a transformerless inverter is that it is necessary to achieve high efficiency compared to other existing inverter topologies. Another key issue is that the inverter configuration should not have any shoot-through issues for higher reliability.Keywords: grid-connected, photovoltaic (PV) systems, transformerless inverter, stray capacitance, common-mode, leakage current, pulse width modulation (PWM)
Procedia PDF Downloads 502328 Hydrothermal Synthesis of Carbon Sphere/Nickel Cobalt Sulfide Core/Shell Microstructure and Its Electrochemical Performance
Authors: Charmaine Lamiel, Van Hoa Nguyen, Marjorie Baynosa, Jae-Jin Shim
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Electrochemical supercapacitors have attracted considerable attention because of their high potential as an efficient energy storage system. The combination of carbon-based material and transition metal oxides/sulfides are studied because they have long and improved cycle life as well as high energy and power densities. In this study, a hierarchical mesoporous carbon sphere/nickel cobalt sulfide (CS/Ni-Co-S) core/shell structure was synthesized using a facile hydrothermal method without any further sulfurization or post-heat treatment. The CS/Ni-Co-S core/shell microstructures exhibited a high capacitance of 724 F g−1 at 2 A g−1 in a 6 M KOH electrolyte. After 2000 charge-discharge cycles, it retained 86.1% of its original capacitance, with high Coulombic efficiency of 97.9%. The electrode exhibited a high energy density of 58.0 Wh kg−1 at an energy density of 1440 W kg−1, and high power density of 7200 W kg−1 at an energy density of 34.2 Wh kg−1. The successful synthesis was considered to be simple and cost-effective which supports the viability of this composite as an alternative activated material for high performance supercapacitors.Keywords: carbon sphere, electrochemical, hydrothermal, nickel cobalt sulfide, supercapacitor
Procedia PDF Downloads 304327 Investigation on the Effect of Sugarcane Bagasse/HDPE Composition on the Screw Withdrawal Resistance of Injection Molded Parts
Authors: Seyed Abdol Mohammad Rezavand, Mohammad Nikbakhsh
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Withdrawal resistance of screws driven into HDPE/Sugarcane Bagasse injection molded parts was investigated. After chemical treatment and drying, SCB was pre-mixed with HDPE using twin extruder. The resulting granules are used in producing samples in injection molding machine. SCB with the quantity of %10, %20, and %30 was used. By using a suitable fixture, screw heads can take with tensile test machine grips. Parts with screws in the center and edge were fasten together. Then, withdrawal resistance was measured with tensile test machine. Injection gate is at the one edge of the part. The results show that by increasing SCB content in composite, the withdrawal resistance is decreased. Furthermore, the withdrawal resistance at the edges (near injection gate and the end of the filling path of mold cavity) is more than that of the center.Keywords: polyethylene, sugarcane bagasse, wood plastic, screw, withdrawal resistance
Procedia PDF Downloads 583326 Modeling the Transport of Charge Carriers in the Active Devices MESFET Based of GaInP by the Monte Carlo Method
Authors: N. Massoum, A. Guen. Bouazza, B. Bouazza, A. El Ouchdi
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The progress of industry integrated circuits in recent years has been pushed by continuous miniaturization of transistors. With the reduction of dimensions of components at 0.1 micron and below, new physical effects come into play as the standard simulators of two dimensions (2D) do not consider. In fact the third dimension comes into play because the transverse and longitudinal dimensions of the components are of the same order of magnitude. To describe the operation of such components with greater fidelity, we must refine simulation tools and adapted to take into account these phenomena. After an analytical study of the static characteristics of the component, according to the different operating modes, a numerical simulation is performed of field-effect transistor with submicron gate MESFET GaInP. The influence of the dimensions of the gate length is studied. The results are used to determine the optimal geometric and physical parameters of the component for their specific applications and uses.Keywords: Monte Carlo simulation, transient electron transport, MESFET device, GaInP
Procedia PDF Downloads 420325 Polypyrrole Integrated MnCo2O4 Nanorods Hybrid as Electrode Material for High Performance Supercapacitor
Authors: Santimoy Khilari, Debabrata Pradhan
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Ever−increasing energy demand and growing energy crisis along with environmental issues emphasize the research on sustainable energy conversion and storage systems. Recently, supercapacitors or electrochemical capacitors emerge as a promising energy storage technology for future generation. The activity of supercapacitors generally depends on the efficiency of its electrode materials. So, the development of cost−effective efficient electrode materials for supercapacitors is one of the challenges to the scientific community. Transition metal oxides with spinel crystal structure receive much attention for different electrochemical applications in energy storage/conversion devices because of their improved performance as compared to simple oxides. In the present study, we have synthesized polypyrrole (PPy) supported manganese cobaltite nanorods (MnCo2O4 NRs) hybrid electrode material for supercapacitor application. The MnCo2O4 NRs were synthesized by a simple hydrothermal and calcination approach. The MnCo2O4 NRs/PPy hybrid was prepared by in situ impregnation of MnCo2O4 NRs during polymerization of pyrrole. The surface morphology and microstructure of as−synthesized samples was characterized by scanning electron microscopy and transmission electron microscopy, respectively. The crystallographic phase of MnCo2O4 NRs, PPy and hybrid was determined by X-ray diffraction. Electrochemical charge storage activity of MnCo2O4 NRs, PPy and MnCo2O4 NRs/PPy hybrid was evaluated from cyclic voltammetry, chronopotentiometry and electrochemical impedance spectroscopy. Significant improvement of specific capacitance was achieved in MnCo2O4 NRs/PPy hybrid as compared to the individual components. Furthermore, the mechanically mixed MnCo2O4 NRs, and PPy shows lower specific capacitance as compared to MnCo2O4 NRs/PPy hybrid suggesting the importance of in situ hybrid preparation. The stability of as prepared electrode materials was tested by cyclic charge-discharge measurement for 1000 cycles. Maximum 94% capacitance was retained with MnCo2O4 NRs/PPy hybrid electrode. This study suggests that MnCo2O4 NRs/PPy hybrid can be used as a low cost electrode material for charge storage in supercapacitors.Keywords: supercapacitors, nanorods, spinel, MnCo2O4, polypyrrole
Procedia PDF Downloads 340324 Efficient Management through Predicting of Use E-Management within Higher Educational Institutions
Authors: S. Maddi Muhammed, Paul Davis, John Geraghty, Mabruk Derbesh
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This study discusses the probability of using electronic management in higher education institutions in Libya. This could be as sampled by creating an electronic gate at the faculties of Engineering and Computing "Information Technology" at Zaytuna University or any other university in Libya. As we all know, the competitive advantage amongst universities is based on their ability to use information technology efficiently and broadly. Universities today value information technology as part of the quality control and assurance and a ranking criterion for a range of services including e-learning and e-Registration. This could be done by developing email systems, electronic or virtual libraries, electronic cards, and other services provided to all students, faculty or staff. This paper discusses a range of important topics that explain how to apply the gate "E" with the faculties at Zaytuna University, Bani Walid colleges in Libya.Keywords: e-management, educational institutions (EI), Libya, Zaytuna, information technology
Procedia PDF Downloads 458323 Simulation Modeling and Analysis of In-Plant Logistics at a Cement Manufacturing Plant in India
Authors: Sachin Kamble, Shradha Gawankar
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This paper presents the findings of successful implementation of Business Process Reengineering (BPR) of cement dispatch activities in a cement manufacturing plant located in India. Simulation model was developed for the purpose of identifying and analyzing the areas for improvement. The company was facing a problem of low throughput rate and subsequent forced stoppages of the plant leading to a high production loss of 15000MT per month. It was found from the study that the present systems and procedures related to the in-plant logistics plant required significant changes. The major recommendations included process improvement at the entry gate, reducing the cycle time at the security gate and installation of an additional weigh bridge. This paper demonstrates how BPR can be implemented for improving the in-plant logistics process. Various recommendations helped the plant to increase its throughput by 14%.Keywords: in-plant logistics, cement logistics, simulation modelling, business process re-engineering, supply chain management
Procedia PDF Downloads 300322 A Survey of Field Programmable Gate Array-Based Convolutional Neural Network Accelerators
Authors: Wei Zhang
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With the rapid development of deep learning, neural network and deep learning algorithms play a significant role in various practical applications. Due to the high accuracy and good performance, Convolutional Neural Networks (CNNs) especially have become a research hot spot in the past few years. However, the size of the networks becomes increasingly large scale due to the demands of the practical applications, which poses a significant challenge to construct a high-performance implementation of deep learning neural networks. Meanwhile, many of these application scenarios also have strict requirements on the performance and low-power consumption of hardware devices. Therefore, it is particularly critical to choose a moderate computing platform for hardware acceleration of CNNs. This article aimed to survey the recent advance in Field Programmable Gate Array (FPGA)-based acceleration of CNNs. Various designs and implementations of the accelerator based on FPGA under different devices and network models are overviewed, and the versions of Graphic Processing Units (GPUs), Application Specific Integrated Circuits (ASICs) and Digital Signal Processors (DSPs) are compared to present our own critical analysis and comments. Finally, we give a discussion on different perspectives of these acceleration and optimization methods on FPGA platforms to further explore the opportunities and challenges for future research. More helpfully, we give a prospect for future development of the FPGA-based accelerator.Keywords: deep learning, field programmable gate array, FPGA, hardware accelerator, convolutional neural networks, CNN
Procedia PDF Downloads 129321 Monte Carlo Simulation of Thyroid Phantom Imaging Using Geant4-GATE
Authors: Parimalah Velo, Ahmad Zakaria
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Introduction: Monte Carlo simulations of preclinical imaging systems allow opportunity to enable new research that could range from designing hardware up to discovery of new imaging application. The simulation system which could accurately model an imaging modality provides a platform for imaging developments that might be inconvenient in physical experiment systems due to the expense, unnecessary radiation exposures and technological difficulties. The aim of present study is to validate the Monte Carlo simulation of thyroid phantom imaging using Geant4-GATE for Siemen’s e-cam single head gamma camera. Upon the validation of the gamma camera simulation model by comparing physical characteristic such as energy resolution, spatial resolution, sensitivity, and dead time, the GATE simulation of thyroid phantom imaging is carried out. Methods: A thyroid phantom is defined geometrically which comprises of 2 lobes with 80mm in diameter, 1 hot spot, and 3 cold spots. This geometry accurately resembling the actual dimensions of thyroid phantom. A planar image of 500k counts with 128x128 matrix size was acquired using simulation model and in actual experimental setup. Upon image acquisition, quantitative image analysis was performed by investigating the total number of counts in image, the contrast of the image, radioactivity distributions on image and the dimension of hot spot. Algorithm for each quantification is described in detail. The difference in estimated and actual values for both simulation and experimental setup is analyzed for radioactivity distribution and dimension of hot spot. Results: The results show that the difference between contrast level of simulation image and experimental image is within 2%. The difference in the total count between simulation and actual study is 0.4%. The results of activity estimation show that the relative difference between estimated and actual activity for experimental and simulation is 4.62% and 3.03% respectively. The deviation in estimated diameter of hot spot for both simulation and experimental study are similar which is 0.5 pixel. In conclusion, the comparisons show good agreement between the simulation and experimental data.Keywords: gamma camera, Geant4 application of tomographic emission (GATE), Monte Carlo, thyroid imaging
Procedia PDF Downloads 271320 Carbon Nanotube Field Effect Transistor - a Review
Authors: P. Geetha, R. S. D. Wahida Banu
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The crowning advances in Silicon based electronic technology have dominated the computation world for the past decades. The captivating performance of Si devices lies in sustainable scaling down of the physical dimensions, by that increasing device density and improved performance. But, the fundamental limitations due to physical, technological, economical, and manufacture features restrict further miniaturization of Si based devices. The pit falls are due to scaling down of the devices such as process variation, short channel effects, high leakage currents, and reliability concerns. To fix the above-said problems, it is needed either to follow a new concept that will manage the current hitches or to support the available concept with different materials. The new concept is to design spintronics, quantum computation or two terminal molecular devices. Otherwise, presently used well known three terminal devices can be modified with different materials that suits to address the scaling down difficulties. The first approach will occupy in the far future since it needs considerable effort; the second path is a bright light towards the travel. Modelling paves way to know not only the current-voltage characteristics but also the performance of new devices. So, it is desirable to model a new device of suitable gate control and project the its abilities towards capability of handling high current, high power, high frequency, short delay, and high velocity with excellent electronic and optical properties. Carbon nanotube became a thriving material to replace silicon in nano devices. A well-planned optimized utilization of the carbon material leads to many more advantages. The unique nature of this organic material allows the recent developments in almost all fields of applications from an automobile industry to medical science, especially in electronics field-on which the automation industry depends. More research works were being done in this area. This paper reviews the carbon nanotube field effect transistor with various gate configurations, number of channel element, CNT wall configurations and different modelling techniques.Keywords: array of channels, carbon nanotube field effect transistor, double gate transistor, gate wrap around transistor, modelling, multi-walled CNT, single-walled CNT
Procedia PDF Downloads 327319 Three-Dimensional Carbon Foam Based Asymmetric Assembly of Metal Oxides Electrodes for High-Performance Solid-State Micro-Supercapacitor
Authors: Sumana Kumar, Abha Misra
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Micro-supercapacitors hold great attention as one of the promising energy storage devices satisfying the increasing quest for miniaturized and portable devices. Despite having impressive power density, superior cyclic lifetime, and high charge-discharge rates, micro-supercapacitors still suffer from low energy density, which limits their practical application. The energy density (E=1/2CV²) can be increased either by increasing specific capacitance (C) or voltage range (V). Asymmetric micro-supercapacitors have attracted great attention by using two different electrode materials to expand the voltage window and thus increase the energy density. Currently, versatile fabrication technologies such as inkjet printing, lithography, laser scribing, etc., are used to directly or indirectly pattern the electrode material; these techniques still suffer from scalable production and cost inefficiency. Here, we demonstrate the scalable production of a three-dimensional (3D) carbon foam (CF) based asymmetric micro-supercapacitor by spray printing technique on an array of interdigital electrodes. The solid-state asymmetric micro-supercapacitor comprised of CF-MnO positive electrode and CF-Fe₂O₃ negative electrode achieves a high areal capacitance of 18.4 mF/cm² (2326.8 mF/cm³) at 5 mV/s and a wider potential window of 1.4 V. Consequently, a superior energy density of 5 µWh/cm² is obtained, and high cyclic stability is confirmed with retention of the initial capacitance by 86.1% after 10000 electrochemical cycles. The optimized decoration of pseudocapacitive metal oxides in the 3D carbon network helps in high electrochemical utilization of materials where the 3D interconnected network of carbon provides overall electrical conductivity and structural integrity. The research provides a simple and scalable spray printing method to fabricate an asymmetric micro-supercapacitor using a custom-made mask that can be integrated on a large scale.Keywords: asymmetric micro-supercapacitors, high energy-density, hybrid materials, three-dimensional carbon-foam
Procedia PDF Downloads 115318 The Yak of Thailand: Folk Icons Transcending Culture, Religion, and Media
Authors: David M. Lucas, Charles W. Jarrett
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In the culture of Thailand, the Yak serve as a mediated icon representing strength, power, and mystical protection not only for the Buddha, but for population of worshipers. Originating from the forests of China, the Yak continue to stand guard at the gates of Buddhist temples. The Yak represents Thai culture in the hearts of Thai people. This paper presents a qualitative study regarding the curious mix of media, culture, and religion that projects the Yak of Thailand as a larger than life message throughout the political, cultural, and religious spheres. The gate guardians, or gods as they are sometimes called, appear throughout the religious temples of Asian cultures. However, the Asian cultures demonstrate differences in artistic renditions (or presentations) of such sentinels. Thailand gate guards (the Yak) stand in front of many Buddhist temples, and these iconic figures display unique features with varied symbolic significance. The temple (or wat), plays a vital role in every community; and, for many people, Thailand’s temples are the country’s most endearing sights. The authors applied folk-nography as a methodology to illustrate the importance of the Thai Yak in serving as meaningful icons that transcend not only time, but the culture, religion, and mass media. The Yak represent mythical, religious, artistic, cultural, and militaristic significance for the Thai people. Data collection included interviews, focus groups, and natural observations. This paper summarizes the perceptions of the Thai people concerning their gate sentries and the relationship, communication, connection, and the enduring respect that Thai people hold for their guardians of the gates.Keywords: communication, culture, folknography, icon, image, media, protection, religion, yak
Procedia PDF Downloads 401317 Study and Design of Solar Inverter System
Authors: Khaled A. Madi, Abdulalhakim O. Naji, Hassouna A. Aalaoh, Elmahdi Eldeeb
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Solar energy is one of the cleanest energy sources with no environmental impact. Due to rapid increase in industrial as well as domestic needs, solar energy becomes a good candidate for safe and easy to handle energy source, especially after it becomes available due to reduction of manufacturing price. The main part of the solar inverter system is the inverter where the DC is inverted to AC, where we try to minimize the loss of power to the minimum possible level by the use of microcontroller. In this work, a deep investigation is made experimentally as well as theoretically for a microcontroller based variable frequency power inverter. The microcontroller will provide the variable frequency Pulse Width Modulation (PWM) signal that will control the switching of the gate of the Insulating Gate Bipolar Transistor (IGBT) with less harmonics at the output of power inverter which can be fed to the public grid at high quality. The proposed work for single phase as well as three phases is also simulated using Matlab/Simulink where we found a good agreement between the simulated and the practical results, even though the experimental work were done in the laboratory of the academy.Keywords: solar, inverter, PV, solar inverter system
Procedia PDF Downloads 463316 Improved Non-Ideal Effects in AlGaN/GaN-Based Ion-Sensitive Field-Effect Transistors
Authors: Wei-Chou Hsu, Ching-Sung Lee, Han-Yin Liu
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This work uses H2O2 oxidation technique to improve the pH sensitivity of the AlGaN/GaN-based ion-sensitive field-effect transistors (ISFETs). 10-nm-thick Al2O3 was grown on the surface of the AlGaN. It was found that the pH sensitivity was improved from 41.6 mV/pH to 55.2 mV/pH. Since the H2O2-grown Al2O3 was served as a passivation layer and the problem of Fermi-level pinning was suppressed for the ISFET with the H2O2 oxidation process. Hysteresis effect in the ISFET with the H2O2 treatment also became insignificant. The hysteresis effect was observed by dipping the ISFETs into different pH value solutions and comparing the voltage difference between the initial and final conditions. The hysteresis voltage (Vhys) of the ISFET with the H2O2 oxidation process was improved from 8.7 mV to 4.8 mV. The hysteresis effect is related to the buried binding sites which are related to the material defects like threading dislocations in the AlGaN/GaN heterostructure which was grown by the hetero-epitaxy technique. The H2O2-grown Al2O3 passivate these material defects and the Al2O3 has less material defects. The long-term stability of the ISFET is estimated by the drift effect measurement. The drift measurement was conducted by dipping the ISFETs into a specific pH value solution for 12 hours and the ISFETs were operating at a specific quiescent point. The drift rate is estimated by the drift voltage divided by the total measuring time. It was found that the drift rate of the ISFET was improved from 10.1 mV/hour to 1.91 mV/hour in the pH 7 solution, from 14.06 mV/hour to 6.38 mV/pH in the pH 2 solution, and from 12.8 mV/hour to 5.48 mV/hour in the pH 12 solution. The drift effect results from the capacitance variation in the electric double layer. The H2O2-grown Al2O3 provides an additional capacitance connection in series with the electric double layer. Therefore, the capacitance variation of the electric double layer became insignificant. Generally, the H2O2 oxidation process is a simple, fast, and cost-effective method for the AlGaN/GaN-based ISFET. Furthermore, the performance of the AlGaN/GaN ISFET was improved effectively and the non-ideal effects were suppressed.Keywords: AlGaN/GaN, Al2O3, hysteresis effect, drift effect, reliability, passivation, pH sensors
Procedia PDF Downloads 328315 Analytical Response Characterization of High Mobility Transistor Channels
Authors: F. Z. Mahi, H. Marinchio, C. Palermo, L. Varani
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We propose an analytical approach for the admittance response calculation of the high mobility InGaAs channel transistors. The development of the small-signal admittance takes into account the longitudinal and transverse electric fields through a pseudo two-dimensional approximation of the Poisson equation. The total currents and the potentials matrix relation between the gate and the drain terminals determine the frequency-dependent small-signal admittance response. The analytical results show that the admittance spectrum exhibits a series of resonant peaks corresponding to the excitation of plasma waves. The appearance of the resonance is discussed and analyzed as functions of the channel length and the temperature. The model can be used, on one hand, to control the appearance of plasma resonances, and on the other hand, can give significant information about the admittance phase frequency dependence.Keywords: small-signal admittance, Poisson equation, currents and potentials matrix, the drain and the gate terminals, analytical model
Procedia PDF Downloads 540314 Carbon Footprint and Exergy Destruction Footprint in White Wine Production Line
Authors: Mahmut Genc, Seda Genc
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Wine is the most popular alcoholic drink in the World with 274.4 million of hectoliter annual production in the year of 2015. The wine industry is very important for some regions as well as creating significant value in their economies. This industry is very sensitive to the global warming since viticulture highly depends on climate and geographical region. Sustainability concept is a crucial issue for the wine industry and sustainability performances of wine production processes should be determined. Although wine production industry is an energy intensive sector as a whole, the most energy intensive products are widely used both in the viti and vinicultural process. In this study, gate-to-gate LCA approach in energy resource utilization and global warming potential impacts for white wine production line were attempted and carbon footprint and exergy destruction footprint were calculated, accordingly. As a result, carbon footprint and exergy destruction footprint values were calculated to be 1.75 kg CO2eq and 365.3kW, respectively.Keywords: carbon footprint, exergy analysis, exergy destruction footprint, white wine
Procedia PDF Downloads 272313 Influence of Deposition Temperature on Supercapacitive Properties of Reduced Graphene Oxide on Carbon Cloth: New Generation of Wearable Energy Storage Electrode Material
Authors: Snehal L. Kadam, Shriniwas B. Kulkarni
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Flexible electrode material with high surface area and good electrochemical properties is the current trend captivating the researchers across globe for application in the next generation energy storage field. In the present work, crumpled sheet like reduced graphene oxide grown on carbon cloth by the hydrothermal method with a series of different deposition temperatures at fixed time. The influence of the deposition temperature on the structural, morphological, optical and supercapacitive properties of the electrode material was investigated by XRD, RAMAN, XPS, TEM, FE-SEM, UV-VISIBLE and electrochemical characterization techniques.The results show that the hydrothermally synthesized reduced graphene oxide on carbon cloth has sheet like mesoporous structure. The reduced graphene oxide material at 160°C exhibits the best supercapacitor performance, with a specific capacitance of 443 F/g at scan rate 5mV/sec. Moreover, stability studies show 97% capacitance retention over 1000 CV cycles. This result shows that hydrothermally synthesized RGO on carbon cloth is the potential electrode material and would be used in the next-generation wearable energy storage systems. The detailed analysis and results will be presented at the conference.Keywords: graphene oxide, reduced graphene oxide, carbon cloth, deposition temperature, supercapacitor
Procedia PDF Downloads 192312 Embedded Hw-Sw Reconfigurable Techniques For Wireless Sensor Network Applications
Authors: B. Kirubakaran, C. Rajasekaran
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Reconfigurable techniques are used in many engineering and industrial applications for the efficient data transmissions through the wireless sensor networks. Nowadays most of the industrial applications are work for try to minimize the size and cost. During runtime the reconfigurable technique avoid the unwanted hang and delay in the system performance. In recent world Field Programmable Gate Array (FPGA) as one of the most efficient reconfigurable device and widely used for most of the hardware and software reconfiguration applications. In this paper, the work deals with whatever going to make changes in the hardware and software during runtime it’s should not affect the current running process that’s the main objective of the paper our changes be done in a parallel manner at the same time concentrating the cost and power transmission problems during data trans-receiving. Analog sensor (Temperature) as an input for the controller (PIC) through that control the FPGA digital sensors in generalized manner.Keywords: field programmable gate array, peripheral interrupt controller, runtime reconfigurable techniques, wireless sensor networks
Procedia PDF Downloads 409311 Al2O3-Dielectric AlGaN/GaN Enhancement-Mode MOS-HEMTs by Using Ozone Water Oxidization Technique
Authors: Ching-Sung Lee, Wei-Chou Hsu, Han-Yin Liu, Hung-Hsi Huang, Si-Fu Chen, Yun-Jung Yang, Bo-Chun Chiang, Yu-Chuang Chen, Shen-Tin Yang
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AlGaN/GaN high electron mobility transistors (HEMTs) have been intensively studied due to their intrinsic advantages of high breakdown electric field, high electron saturation velocity, and excellent chemical stability. They are also suitable for ultra-violet (UV) photodetection due to the corresponding wavelengths of GaN bandgap. To improve the optical responsivity by decreasing the dark current due to gate leakage problems and limited Schottky barrier heights in GaN-based HEMT devices, various metal-oxide-semiconductor HEMTs (MOS-HEMTs) have been devised by using atomic layer deposition (ALD), molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), liquid phase deposition (LPD), and RF sputtering. The gate dielectrics include MgO, HfO2, Al2O3, La2O3, and TiO2. In order to provide complementary circuit operation, enhancement-mode (E-mode) devices have been lately studied using techniques of fluorine treatment, p-type capper, piezoneutralization layer, and MOS-gate structure. This work reports an Al2O3-dielectric Al0.25Ga0.75N/GaN E-mode MOS-HEMT design by using a cost-effective ozone water oxidization technique. The present ozone oxidization method advantages of low cost processing facility, processing simplicity, compatibility to device fabrication, and room-temperature operation under atmospheric pressure. It can further reduce the gate-to-channel distance and improve the transocnductance (gm) gain for a specific oxide thickness, since the formation of the Al2O3 will consume part of the AlGaN barrier at the same time. The epitaxial structure of the studied devices was grown by using the MOCVD technique. On a Si substrate, the layer structures include a 3.9 m C-doped GaN buffer, a 300 nm GaN channel layer, and a 5 nm Al0.25Ga0.75N barrier layer. Mesa etching was performed to provide electrical isolation by using an inductively coupled-plasma reactive ion etcher (ICP-RIE). Ti/Al/Au were thermally evaporated and annealed to form the source and drain ohmic contacts. The device was immersed into the H2O2 solution pumped with ozone gas generated by using an OW-K2 ozone generator. Ni/Au were deposited as the gate electrode to complete device fabrication of MOS-HEMT. The formed Al2O3 oxide thickness 7 nm and the remained AlGaN barrier thickness is 2 nm. A reference HEMT device has also been fabricated in comparison on the same epitaxial structure. The gate dimensions are 1.2 × 100 µm 2 with a source-to-drain spacing of 5 μm for both devices. The dielectric constant (k) of Al2O3 was characterized to be 9.2 by using C-V measurement. Reduced interface state density after oxidization has been verified by the low-frequency noise spectra, Hooge coefficients, and pulse I-V measurement. Improved device characteristics at temperatures of 300 K-450 K have been achieved for the present MOS-HEMT design. Consequently, Al2O3-dielectric Al0.25Ga0.75N/GaN E-mode MOS-HEMTs by using the ozone water oxidization method are reported. In comparison with a conventional Schottky-gate HEMT, the MOS-HEMT design has demonstrated excellent enhancements of 138% (176%) in gm, max, 118% (139%) in IDS, max, 53% (62%) in BVGD, 3 (2)-order reduction in IG leakage at VGD = -60 V at 300 (450) K. This work is promising for millimeter-wave integrated circuit (MMIC) and three-terminal active UV photodetector applications.Keywords: MOS-HEMT, enhancement mode, AlGaN/GaN, passivation, ozone water oxidation, gate leakage
Procedia PDF Downloads 263310 Steady State Charge Transport in Quantum Dots: Nonequilibrium Green's Function (NEGF) vs. Single Electron Analysis
Authors: Mahesh Koti
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In this paper, we present a quantum transport study of a quantum dot in steady state in the presence of static gate potential. We consider a quantum dot coupled to the two metallic leads. The quantum dot under study is modeled through Anderson Impurity Model (AIM) with hopping parameter modulated through voltage drop between leads and the central dot region. Based on the Landauer's formula derived from Nonequilibrium Green's Function and Single Electron Theory, the essential ingredients of transport properties are revealed. We show that the results out of two approaches closely agree with each other. We demonstrate that Landauer current response derived from single electron approach converges with non-zero interaction through gate potential whereas Landauer current response derived from Nonequilibrium Green's Function (NEGF) hits a pole.Keywords: Anderson impurity model (AIM), nonequilibrium Green's function (NEGF), Landauer's formula, single electron analysis
Procedia PDF Downloads 473309 High-Performance Supercapacitors with Activated Carbon and Nickel Sulfide Composite
Authors: Sarita Sindhu, Vinay Kumar
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The growing demand for efficient energy storage in applications such as portable electronics, electric vehicles, and renewable energy systems has emphasized the need for advanced energy storage materials. This study addresses the pressing need for efficient energy storage materials by exploring the synthesis and application of a composite of activated carbon (AC) and nickel sulfide (NiS) for supercapacitors. Activated carbon, possessing high surface area and excellent electrochemical stability, was combined with nickel sulfide, a transition metal sulfide with high theoretical capacitance, to enhance the electrochemical performance of the composite material. Characterization techniques, including scanning electron microscopy (SEM), X-ray diffraction (XRD), and Fourier-transform infrared spectroscopy (FTIR), were employed to analyze the morphology, crystalline structure, and bonding characteristics, confirming the successful formation of a uniformly distributed AC/NiS composite. Electrochemical evaluations revealed that the AC/NiS composite exhibited superior capacitance, excellent rate capability, and enhanced cycling stability compared to pure AC and NiS. The synergistic effect of the large surface area from activated carbon and redox-active sites of nickel sulfide provided an improved energy storage capacity, making this composite a promising electrode material for high-performance supercapacitors.Keywords: activated carbon, energy storage, sulfide, surface area
Procedia PDF Downloads 16308 Electrical Properties of Polarization-Induced Aluminum Nitride/Gallium Nitride Heterostructures Homoepitaxially Grown on Aluminum Nitride Sapphire Template by Molecular Beam Epitaxy
Authors: Guanlin Wu, Jiajia Yao, Fang Liu, Junshuai Xue, Jincheng Zhang, Yue Hao
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Owing to the excellent thermal conductivity and ultra-wide bandgap, Aluminum nitride (AlN)/Gallium nitride (GaN) is a highly promising material to achieve high breakdown voltage and output power devices among III-nitrides. In this study, we explore the growth and characterization of polarization-induced AlN/GaN heterostructures using plasma-assisted molecular beam epitaxy (PA-MBE) on AlN-on-sapphire templates. To improve the crystal quality and demonstrate the effectiveness of the PA-MBE approach, a thick AlN buffer of 180 nm was first grown on the AlN-on sapphire template. This buffer acts as a back-barrier to enhance the breakdown characteristic and isolate leakage paths that exist in the interface between the AlN epilayer and the AlN template. A root-mean-square roughness of 0.2 nm over a scanned area of 2×2 µm2 was measured by atomic force microscopy (AFM), and the full-width at half-maximum of (002) and (102) planes on the X-ray rocking curve was 101 and 206 arcsec, respectively, using by high-resolution X-ray diffraction (HR-XRD). The electron mobility of 443 cm2/Vs with a carrier concentration of 2.50×1013 cm-2 at room temperature was achieved in the AlN/GaN heterostructures by using a polarization-induced GaN channel. The low depletion capacitance of 15 pF is resolved by the capacitance-voltage. These results indicate that the polarization-induced AlN/GaN heterostructures have great potential for next-generation high-temperature, high-frequency, and high-power electronics.Keywords: AlN, GaN, MBE, heterostructures
Procedia PDF Downloads 85307 CMOS Positive and Negative Resistors Based on Complementary Regulated Cascode Topology with Cross-Coupled Regulated Transistors
Authors: Kittipong Tripetch, Nobuhiko Nakano
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Two types of floating active resistors based on a complementary regulated cascode topology with cross-coupled regulated transistors are presented in this paper. The first topology is a high swing complementary regulated cascode active resistor. The second topology is a complementary common gate with a regulated cross coupled transistor. The small-signal input resistances of the floating resistors are derived. Three graphs of the input current versus the input voltage for different aspect ratios are designed and plotted using the Cadence Spectre 0.18-µm Rohm Semiconductor process. The total harmonic distortion graphs are plotted for three different aspect ratios with different input-voltage amplitudes and different input frequencies. From the simulation results, it is observed that a resistance of approximately 8.52 MΩ can be obtained from supply voltage at ±0.9 V.Keywords: floating active resistor, complementary common gate, complementary regulated cascode, current mirror
Procedia PDF Downloads 259306 Analytical Modeling of Drain Current for DNA Biomolecule Detection in Double-Gate Tunnel Field-Effect Transistor Biosensor
Authors: Ashwani Kumar
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Abstract- This study presents an analytical modeling approach for analyzing the drain current behavior in Tunnel Field-Effect Transistor (TFET) biosensors used for the detection of DNA biomolecules. The proposed model focuses on elucidating the relationship between the drain current and the presence of DNA biomolecules, taking into account the impact of various device parameters and biomolecule characteristics. Through comprehensive analysis, the model offers insights into the underlying mechanisms governing the sensing performance of TFET biosensors, aiding in the optimization of device design and operation. A non-local tunneling model is incorporated with other essential models to accurately trace the simulation and modeled data. An experimental validation of the model is provided, demonstrating its efficacy in accurately predicting the drain current response to DNA biomolecule detection. The sensitivity attained from the analytical model is compared and contrasted with the ongoing research work in this area.Keywords: biosensor, double-gate TFET, DNA detection, drain current modeling, sensitivity
Procedia PDF Downloads 58305 Permeable Bio-Reactive Barriers to Tackle Petroleum Hydrocarbon Contamination in the Sub-Antarctic
Authors: Benjamin L. Freidman, Sally L. Gras, Ian Snape, Geoff W. Stevens, Kathryn A. Mumford
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Increasing transportation and storage of petroleum hydrocarbons in Antarctic and sub-Antarctic regions have resulted in frequent accidental spills. Migrating petroleum hydrocarbon spills can have a significant impact on terrestrial and marine ecosystems in cold regions, as harsh environmental conditions result in heightened sensitivity to pollution. This migration of contaminants has led to the development of Permeable Reactive Barriers (PRB) for application in cold regions. PRB’s are one of the most practical technologies for on-site or in-situ groundwater remediation in cold regions due to their minimal energy, monitoring and maintenance requirements. The Main Power House site has been used as a fuel storage and power generation area for the Macquarie Island research station since at least 1960. Soil analysis at the site has revealed Total Petroleum Hydrocarbon (TPH) (C9-C28) concentrations as high as 19,000 mg/kg soil. Groundwater TPH concentrations at this site can exceed 350 mg/L TPH. Ongoing migration of petroleum hydrocarbons into the neighbouring marine ecosystem resulted in the installation of a ‘funnel and gate’ PRB in November 2014. The ‘funnel and gate’ design successfully intercepted contaminated groundwater and analysis of TPH retention and biodegradation on PRB media are currently underway. Installation of the PRB facilitates research aimed at better understanding the contribution of particle attached biofilms to the remediation of groundwater systems. Bench-scale PRB system analysis at The University of Melbourne is currently examining the role biofilms play in petroleum hydrocarbon degradation, and how controlled release nutrient media can heighten the metabolic activity of biofilms in cold regions in the presence of low temperatures and low nutrient groundwater.Keywords: groundwater, petroleum, Macquarie island, funnel and gate
Procedia PDF Downloads 359304 The Impact of the Variation of Sky View Factor on Landscape Degree of Enclosure of Urban Blue and Green Belt
Authors: Yi-Chun Huang, Kuan-Yun Chen, Chuang-Hung Lin
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Urban Green Belt and Blue is a part of the city landscape, it is an important constituent element of the urban environment and appearance. The Hsinchu East Gate Moat is situated in the center of the city, which not only has a wealth of historical and cultural resources, but also combines the Green Belt and the Blue Belt qualities at the same time. The Moat runs more than a thousand meters through the vital Green Belt and the Blue Belt in downtown, and each section is presented in different qualities of moat from south to north. The water area and the green belt of surroundings are presented linear and banded spread. The water body and the rich diverse river banks form an urban green belt of rich layers. The watercourse with green belt design lets users have connections with blue belts in different ways; therefore, the integration of Hsinchu East Gate and moat have become one of the unique urban landscapes in Taiwan. The study is based on the fact-finding case of Hsinchu East Gate Moat where situated in northern Taiwan, to research the impact between the SVF variation of the city and spatial sequence of Urban Green Belt and Blue landscape and visual analysis by constituent cross-section, and then comparing the influence of different leaf area index – the variable ecological factors to the degree of enclosure. We proceed to survey the landscape design of open space, to measure existing structural features of the plant canopy which contain the height of plants and branches, the crown diameter, breast-height diameter through access to diagram of Geographic Information Systems (GIS) and on-the-spot actual measurement. The north and south districts of blue green belt areas are divided 20 meters into a unit from East Gate Roundabout as the epicenter, and to set up a survey points to measure the SVF above the survey points; then we proceed to quantitative analysis from the data to calculate open landscape degree of enclosure. The results can be reference for the composition of future river landscape and the practical operation for dynamic space planning of blue and green belt landscape.Keywords: sky view factor, degree of enclosure, spatial sequence, leaf area indices
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