Search results for: field effect transistor
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 21658

Search results for: field effect transistor

21598 The Research of 'Rope Coiling' Effect in Near-Field Electrospinning

Authors: Feiyu Fang, Han Wang, Xin Chen, Jun Zeng, Feng Liang, Peixuan Wu

Abstract:

The 'rope coiling' effect is a normal instability phenomenon widespread exists in viscous fluid, elastic rods and polymeric fibers owing to compressive stress when they fall into a moving belt. Near-field electro-spinning is the modified electro-spinning technique has the ability to direct write micro fibers. In this research, we study the “rope coiling” effect in near-field electro-spinning. By changing the distance between nozzle and collector or the speed ratio between the charge jet speed and the platform moving speed, we obtain a pile of different models coils including the meandering, alternating and coiling patterns. Therefore, this instability can be used to direct write micro structured fibers with a one-step process.

Keywords: rope coiling effects, near-field electrospinning, direct write, micro structure

Procedia PDF Downloads 354
21597 The Effect of Electric Field Distributions on Grains and Insect for Dielectric Heating Applications

Authors: S. Santalunai, T. Thosdeekoraphat, C. Thongsopa

Abstract:

This paper presents the effect of electric field distribution which is an electric field intensity analysis. Consideration of the dielectric heating of grains and insects, the rice and rice weevils are utilized for dielectric heating analysis. Furthermore, this analysis compares the effect of electric field distribution in rice and rice weevil. In this simulation, two copper plates are used to generate the electric field for dielectric heating system and put the rice materials between the copper plates. The simulation is classified in two cases, which are case I one rice weevil is placed in the rice and case II two rice weevils are placed at different position in the rice. Moreover, the probes are located in various different positions on plate. The power feeding on this plate is optimized by using CST EM studio program of 1000 watt electrical power at 39 MHz resonance frequency. The results of two cases are indicated that the most electric field distribution and intensity are occurred on the rice and rice weevils at the near point of the probes. Moreover, the heat is directed to the rice weevils more than the rice. When the temperature of rice and rice weevils are calculated and compared, the rice weevils has the temperature more than rice is about 41.62 Celsius degrees. These results can be applied for the dielectric heating applications to eliminate insect.

Keywords: capacitor copper plates, electric field distribution, dielectric heating, grains

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21596 A 1T1R Nonvolatile Memory with Al/TiO₂/Au and Sol-Gel Processed Barium Zirconate Nickelate Gate in Pentacene Thin Film Transistor

Authors: Ke-Jing Lee, Cheng-Jung Lee, Yu-Chi Chang, Li-Wen Wang, Yeong-Her Wang

Abstract:

To avoid the cross-talk issue of only resistive random access memory (RRAM) cell, one transistor and one resistor (1T1R) architecture with a TiO₂-based RRAM cell connected with solution barium zirconate nickelate (BZN) organic thin film transistor (OTFT) device is successfully demonstrated. The OTFT were fabricated on a glass substrate. Aluminum (Al) as the gate electrode was deposited via a radio-frequency (RF) magnetron sputtering system. The barium acetate, zirconium n-propoxide, and nickel II acetylacetone were synthesized by using the sol-gel method. After the BZN solution was completely prepared using the sol-gel process, it was spin-coated onto the Al/glass substrate as the gate dielectric. The BZN layer was baked at 100 °C for 10 minutes under ambient air conditions. The pentacene thin film was thermally evaporated on the BZN layer at a deposition rate of 0.08 to 0.15 nm/s. Finally, gold (Au) electrode was deposited using an RF magnetron sputtering system and defined through shadow masks as both the source and drain. The channel length and width of the transistors were 150 and 1500 μm, respectively. As for the manufacture of 1T1R configuration, the RRAM device was fabricated directly on drain electrodes of TFT device. A simple metal/insulator/metal structure, which consisting of Al/TiO₂/Au structures, was fabricated. First, Au was deposited to be a bottom electrode of RRAM device by RF magnetron sputtering system. Then, the TiO₂ layer was deposited on Au electrode by sputtering. Finally, Al was deposited as the top electrode. The electrical performance of the BZN OTFT was studied, showing superior transfer characteristics with the low threshold voltage of −1.1 V, good saturation mobility of 5 cm²/V s, and low subthreshold swing of 400 mV/decade. The integration of the BZN OTFT and TiO₂ RRAM devices was finally completed to form 1T1R configuration with low power consumption of 1.3 μW, the low operation current of 0.5 μA, and reliable data retention. Based on the I-V characteristics, the different polarities of bipolar switching are found to be determined by the compliance current with the different distribution of the internal oxygen vacancies used in the RRAM and 1T1R devices. Also, this phenomenon can be well explained by the proposed mechanism model. It is promising to make the 1T1R possible for practical applications of low-power active matrix flat-panel displays.

Keywords: one transistor and one resistor (1T1R), organic thin-film transistor (OTFT), resistive random access memory (RRAM), sol-gel

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21595 Hydromagnetic Linear Instability Analysis of Giesekus Fluids in Taylor-Couette Flow

Authors: K. Godazandeh, K. Sadeghy

Abstract:

In the present study, the effect of magnetic field on the hydrodynamic instability of Taylor-Couette flow between two concentric rotating cylinders has been numerically investigated. At the beginning the basic flow has been solved using continuity, Cauchy equations (with regards to Lorentz force) and the constitutive equations of a viscoelastic model called "Giesekus" model. Small perturbations, considered to be normal mode, have been superimposed to the basic flow and the unsteady perturbation equations have been derived consequently. Neglecting non-linear terms, the general eigenvalue problem obtained has been solved using pseudo spectral method (combination of Chebyshev polynomials). The objective of the calculations is to study the effect of magnetic fields on the onset of first mode of instability (axisymmetric mode) for different dimensionless parameters of the flow. The results show that the stability picture is highly influenced by the magnetic field. When magnetic field increases, it first has a destabilization effect which changes to stabilization effect due to more increase of magnetic fields. Therefor there is a critical magnetic number (Hartmann number) for instability of Taylor-Couette flow. Also, the effect of magnetic field is more dominant in large gaps. Also based on the results obtained, magnetic field shows a more considerable effect on the stability at higher Weissenberg numbers (at higher elasticity), while the "mobility factor" changes show no dominant role on the intense of suction and injection effect on the flow's instability.

Keywords: magnetic field, Taylor-Couette flow, Giesekus model, pseudo spectral method, Chebyshev polynomials, Hartmann number, Weissenberg number, mobility factor

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21594 Electrodeposition of Nickel-Zinc Alloy on Stainless Steel in a Magnetic Field in a Chloride Environment

Authors: Naima Benachour, Sabiha Chouchane, J. Paul Chopart

Abstract:

The objective of this work is to determine the appropriate conditions for a Ni-Zn deposit with good nickel content. The electrodeposition of zinc-nickel on a stainless steel is carried out in a chlorinated bath NiCl2.6H2O, ZnCl2, and H3BO3), whose composition is 1.1 M; 1.8 M; 0.1 M respectively. Studies show the effect of the concentration of NH4Cl, which reveals a significant effect on the reduction and ion transport in the electrolyte. In order to highlight the influence of magnetic field on the chemical composition and morphology of the deposit, chronopotentiometry tests were conducted, the curves obtained inform us that the application of a magnetic field promotes stability of the deposit. Characterization developed deposits was performed by scanning electron microscopy coupled with EDX and specified by the X-ray diffraction.

Keywords: Zn-Ni alloys, electroplating, magnetic field, chronopotentiometry

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21593 There Is a Reversal Effect of Relative Age in Elite Senior Athletics: Successful Young Men Are «Early-Born Athletes», While in Adults There Are More «Late-Born» Athletes

Authors: Bezuglov Eduard, Achkasov Evgeniy, Emanov Anton, Shagiakhmetova Larisa, Pirmakhanov Bekzhan, Morgans Ryland

Abstract:

Background: Previous studies have found that there is a wide range of the relative age effect (RAE) in young athletes, which is dependent on age and gender. However, there is currently scant data comparing the prevalence of the RAE in successful athletes across different age groups from the same sport during the same time period. We aimed to compare the prevalence of the RAE in different age groups of successful athletes. Materials and methods: The date of birth of all youth (under 18 years old) and senior (20 years and above) male and female track and field athletes were analyzed. All athletes had entered the World Top 20 rankings in disciplines where performance rules were the same at youth and adult levels. Data were collected from the website www. tilostopaja.eu between 1999 and 2006. Results: A significant prevalence of RAE in successful youth track and field athletes were reported. Early-born (61,1%) and late-born (38,9%) athletes were represented respectively (χ2 = 131,1, p < 0,001, ϖ = 0,24). The RAE is not significant in successful senior track and field athletes. Athletes born in the first half of the year are only 0.4% more prevalent than athletes born in the second half of the year (50,2% and 49,8%, respectively). Olympic Games and World Championship medalists are more often late-born athletes (44,1% and 55,9%, respectively) (p = 0,014, χ2 = 6,1, ϖ = 0,20). Conclusion: The RAE is only prevalent in successful young track and field athletes. The RAE was not observed in successful senior track and field athletes, regardless of gender, in any of the analyzed discipline groups. The RAE reverse was observed in successful senior track and field athletes.

Keywords: relative age effect, track, and field, talent identification, underdog effect

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21592 Parallel Magnetic Field Effect on Copper Cementation onto Rotating Iron Rod

Authors: Hamouda M. Mousa, M. Obaid, Chan Hee Park, Cheol Sang Kim

Abstract:

The rate of copper cementation on iron rod was investigated. The study was mainly dedicated to illustrate the effect of application of electromagnetic field (EMF) on the rate of cementation. The magnetic flux was placed parallel to the iron rod and different magnetic field strength was studied. The results showed that without EMF, the rate of mass transfer was correlated by the equation: Sh= 1.36 Re0. 098 Sc0.33. The application of EMF enhanced the time required to reach high percentage copper cementation by 50%. The rate of mass transfer was correlated by the equation: Sh= 2.29 Re0. 95 Sc0.33, with applying EMF. This work illustrates that the enhancement of copper recovery in presence of EMF is due to the induced motion of Fe+n in the solution which is limited in the range of rod rotation speed of 300~900 rpm. The calculation of power consumption of EMF showed that although the application of EMF partially reduced the cementation time, the reduction of power consumption due to utilization of magnetic field is comparable to the increase in power consumed by introducing magnetic field of 2462 A T/m.

Keywords: copper cementation, electromagnetic field, copper ions, iron cylinder

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21591 Influence of Measurement System on Negative Bias Temperature Instability Characterization: Fast BTI vs Conventional BTI vs Fast Wafer Level Reliability

Authors: Vincent King Soon Wong, Hong Seng Ng, Florinna Sim

Abstract:

Negative Bias Temperature Instability (NBTI) is one of the critical degradation mechanisms in semiconductor device reliability that causes shift in the threshold voltage (Vth). However, thorough understanding of this reliability failure mechanism is still unachievable due to a recovery characteristic known as NBTI recovery. This paper will demonstrate the severity of NBTI recovery as well as one of the effective methods used to mitigate, which is the minimization of measurement system delays. Comparison was done in between two measurement systems that have significant differences in measurement delays to show how NBTI recovery causes result deviations and how fast measurement systems can mitigate NBTI recovery. Another method to minimize NBTI recovery without the influence of measurement system known as Fast Wafer Level Reliability (FWLR) NBTI was also done to be used as reference.

Keywords: fast vs slow BTI, fast wafer level reliability (FWLR), negative bias temperature instability (NBTI), NBTI measurement system, metal-oxide-semiconductor field-effect transistor (MOSFET), NBTI recovery, reliability

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21590 Throughflow Effects on Thermal Convection in Variable Viscosity Ferromagnetic Liquids

Authors: G. N. Sekhar, P. G. Siddheshwar, G. Jayalatha, R. Prakash

Abstract:

The problem of thermal convection in temperature and magnetic field sensitive Newtonian ferromagnetic liquid is studied in the presence of uniform vertical magnetic field and throughflow. Using a combination of Galerkin and shooting techniques the critical eigenvalues are obtained for stationary mode. The effect of Prandtl number (Pr > 1) on onset is insignificant and nonlinearity of non-buoyancy magnetic parameter M3 is found to have no influence on the onset of ferroconvection. The magnetic buoyancy number, M1 and variable viscosity parameter, V have destabilizing influences on the system. The effect of throughflow Peclet number, Pe is to delay the onset of ferroconvection and this effect is independent of the direction of flow.

Keywords: ferroconvection, magnetic field dependent viscosity, temperature dependent viscosity, throughflow

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21589 Design and Simulation of 3-Transistor Active Pixel Sensor Using MATLAB Simulink

Authors: H. Alheeh, M. Alameri, A. Al Tarabsheh

Abstract:

There has been a growing interest in CMOS-based sensors technology in cameras as they afford low-power, small-size, and cost-effective imaging systems. This article describes the CMOS image sensor pixel categories and presents the design and the simulation of the 3-Transistor (3T) Active Pixel Sensor (APS) in MATLAB/Simulink tool. The analysis investigates the conversion of the light into an electrical signal for a single pixel sensing circuit, which consists of a photodiode and three NMOS transistors. The paper also proposes three modes for the pixel operation; reset, integration, and readout modes. The simulations of the electrical signals for each of the studied modes of operation show how the output electrical signals are correlated to the input light intensities. The charging/discharging speed for the photodiodes is also investigated. The output voltage for different light intensities, including in dark case, is calculated and showed its inverse proportionality with the light intensity.

Keywords: APS, CMOS image sensor, light intensities photodiode, simulation

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21588 Dual-Rail Logic Unit in Double Pass Transistor Logic

Authors: Hamdi Belgacem, Fradi Aymen

Abstract:

In this paper we present a low power, low cost differential logic unit (LU). The proposed LU receives dual-rail inputs and generates dual-rail outputs. The proposed circuit can be used in Arithmetic and Logic Units (ALU) of processor. It can be also dedicated for self-checking applications based on dual duplication code. Four logic functions as well as their inverses are implemented within a single Logic Unit. The hardware overhead for the implementation of the proposed LU is lower than the hardware overhead required for standard LU implemented with standard CMOS logic style. This new implementation is attractive as fewer transistors are required to implement important logic functions. The proposed differential logic unit can perform 8 Boolean logical operations by using only 16 transistors. Spice simulations using a 32 nm technology was utilized to evaluate the performance of the proposed circuit and to prove its acceptable electrical behaviour.

Keywords: differential logic unit, double pass transistor logic, low power CMOS design, low cost CMOS design

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21587 Electric Field Effect on the Rise of Single Bubbles during Boiling

Authors: N. Masoudnia, M. Fatahi

Abstract:

An experimental study of saturated pool boiling on a single artificial nucleation site without and with the application of an electric field on the boiling surface has been conducted. N-pentane is boiling on a copper surface and is recorded with a high speed camera providing high quality pictures and movies. The accuracy of the visualization allowed establishing an experimental bubble growth law from a large number of experiments. This law shows that the evaporation rate is decreasing during the bubble growth, and underlines the importance of liquid motion induced by the preceding bubble. Bubble rise is therefore studied: once detached, bubbles accelerate vertically until reaching a maximum velocity in good agreement with a correlation from literature. The bubbles then turn to another direction. The effect of applying an electric field on the boiling surface in finally studied. In addition to changes of the bubble shape, changes are also shown in the liquid plume and the convective structures above the surface. Lower maximum rising velocities were measured in the presence of electric fields, especially with a negative polarity.

Keywords: single bubbles, electric field, boiling, effect

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21586 Validation of Electrical Field Effect on Electrostatic Desalter Modeling with Experimental Laboratory Data

Authors: Fatemeh Yazdanmehr, Iulian Nistor

Abstract:

The scope of the current study is the evaluation of the electric field effect on electrostatic desalting mathematical modeling with laboratory data. This research study was focused on developing a model for an existing operation desalting unit of one of the Iranian heavy oil field with a 75 MBPD production capacity. The high temperature of inlet oil to dehydration unit reduces the oil recovery, so the mathematical modeling of desalter operation parameters is very significant. The existing production unit operating data has been used for the accuracy of the mathematical desalting plant model. The inlet oil temperature to desalter was decreased from 110 to 80°C, and the desalted electrical field was increased from 0.75 to 2.5 Kv/cm. The model result shows that the desalter parameter changes meet the water-oil specification and also the oil production and consequently annual income is increased. In addition to that, changing desalter operation conditions reduces environmental footprint because of flare gas reduction. Following to specify the accuracy of selected electrostatic desalter electrical field, laboratory data has been used. Experimental data are used to ensure the effect of electrical field change on desalter. Therefore, the lab test is done on a crude oil sample. The results include the dehydration efficiency in the presence of a demulsifier and under electrical field (0.75 Kv) conditions at various temperatures. Comparing lab experimental and electrostatic desalter mathematical model results shows 1-3 percent acceptable error which confirms the validity of desalter specification and operation conditions changes.

Keywords: desalter, electrical field, demulsification, mathematical modeling, water-oil separation

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21585 Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit

Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam

Abstract:

According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.

Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling

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21584 Effect of Built in Polarization on Thermal Properties of InGaN/GaN Heterostructures

Authors: Bijay Kumar Sahoo

Abstract:

An important feature of InₓGa₁-ₓN/GaN heterostructures is strong built-in polarization (BIP) electric field at the hetero-interface due to spontaneous (sp) and piezoelectric (pz) polarizations. The intensity of this electric field reaches several MV/cm. This field has profound impact on optical, electrical and thermal properties. In this work, the effect of BIP field on thermal conductivity of InₓGa₁-ₓN/GaN heterostructure has been investigated theoretically. The interaction between the elastic strain and built in electric field induces additional electric polarization. This additional polarization contributes to the elastic constant of InₓGa₁-ₓN alloy. This in turn modifies material parameters of InₓGa₁-ₓN. The BIP mechanism enhances elastic constant, phonon velocity and Debye temperature and their bowing constants in InₓGa₁-ₓN alloy. These enhanced thermal parameters increase phonon mean free path which boost thermal conduction process. The thermal conductivity (k) of InxGa1-xN alloy has been estimated for x=0, 0.1, 0.3 and 0.9. Computation finds that irrespective of In content, the room temperature k of InₓGa₁-ₓN/GaN heterostructure is enhanced by BIP mechanism. Our analysis shows that at a certain temperature both k with and without BIP show crossover. Below this temperature k with BIP field is lower than k without BIP; however, above this temperature k with BIP field is significantly contributed by BIP mechanism leading to k with BIP field become higher than k without BIP field. The crossover temperature is primary pyroelectric transition temperature. The pyroelectric transition temperature of InₓGa₁-ₓN alloy has been predicted for different x. This signature of pyroelectric nature suggests that thermal conductivity can reveal pyroelectricity in InₓGa₁-ₓN alloy. The composition dependent room temperature k for x=0.1 and 0.3 are in line with prior experimental studies. The result can be used to minimize the self-heating effect in InₓGa₁-ₓN/GaN heterostructures.

Keywords: built-in polarization, phonon relaxation time, thermal properties of InₓGa₁-ₓN /GaN heterostructure, self-heating

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21583 Accurate Cortical Reconstruction in Narrow Sulci with Zero-Non-Zero Distance (ZNZD) Vector Field

Authors: Somojit Saha, Rohit K. Chatterjee, Sarit K. Das, Avijit Kar

Abstract:

A new force field is designed for propagation of the parametric contour into deep narrow cortical fold in the application of knowledge based reconstruction of cerebral cortex from MR image of brain. Designing of this force field is highly inspired by the Generalized Gradient Vector Flow (GGVF) model and markedly differs in manipulation of image information in order to determine the direction of propagation of the contour. While GGVF uses edge map as its main driving force, the newly designed force field uses the map of distance between zero valued pixels and their nearest non-zero valued pixel as its main driving force. Hence, it is called Zero-Non-Zero Distance (ZNZD) force field. The objective of this force field is forceful propagation of the contour beyond spurious convergence due to partial volume effect (PVE) in to narrow sulcal fold. Being function of the corresponding non-zero pixel value, the force field has got an inherent property to determine spuriousness of the edge automatically. It is effectively applied along with some morphological processing in the application of cortical reconstruction to breach the hindrance of PVE in narrow sulci where conventional GGVF fails.

Keywords: deformable model, external force field, partial volume effect, cortical reconstruction, MR image of brain

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21582 Effects of Magnetic Field Strength on Fluid Flow Behavior in a Constricted Channel

Authors: Ashkan Javadzadegan, Aitak Javadzadegan, Babak Fakhim

Abstract:

One of possible ways to retard movement of fluid is through applying an external magnetic field. In this regard, this study is focused on the effect of a uniform transverse magnetic field on fluid flow behavior inside a channel with a local symmetric constriction. Also, Ellis Non-Newtonian model is implemented to address the effects of shear-dependent viscosity. According to the results, the flow separation downstream of the constriction can be controlled by applying an external magnetic field and/or manipulating the shear-thinning degree of fluid. It is also demonstrated that pressure drop increases by an increase in the strength of the magnetic field.

Keywords: magnetic field, non-Newtonian, separation, shear thinning

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21581 Two-Dimensional CFD Simulation of the Behaviors of Ferromagnetic Nanoparticles in Channel

Authors: Farhad Aalizadeh, Ali Moosavi

Abstract:

This paper presents a two-dimensional Computational Fluid Dynamics (CFDs) simulation for the steady, particle tracking. The purpose of this paper is applied magnetic field effect on Magnetic Nanoparticles velocities distribution. It is shown that the permeability of the particles determines the effect of the magnetic field on the deposition of the particles and the deposition of the particles is inversely proportional to the Reynolds number. Using MHD and its property it is possible to control the flow velocity, remove the fouling on the walls and return the system to its original form. we consider a channel 2D geometry and solve for the resulting spatial distribution of particles. According to obtained results when only magnetic fields are applied perpendicular to the flow, local particles velocity is decreased due to the direct effect of the magnetic field return the system to its original fom. In the method first, in order to avoid mixing with blood, the ferromagnetic particles are covered with a gel-like chemical composition and are injected into the blood vessels. Then, a magnetic field source with a specified distance from the vessel is used and the particles are guided to the affected area. This paper presents a two-dimensional Computational Fluid Dynamics (CFDs) simulation for the steady, laminar flow of an incompressible magnetorheological (MR) fluid between two fixed parallel plates in the presence of a uniform magnetic field. The purpose of this study is to develop a numerical tool that is able to simulate MR fluids flow in valve mode and determineB0, applied magnetic field effect on flow velocities and pressure distributions.

Keywords: MHD, channel clots, magnetic nanoparticles, simulations

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21580 Study on the Impact of Size and Position of the Shear Field in Determining the Shear Modulus of Glulam Beam Using Photogrammetry Approach

Authors: Niaz Gharavi, Hexin Zhang

Abstract:

The shear modulus of a timber beam can be determined using torsion test or shear field test method. The shear field test method is based on shear distortion measurement of the beam at the zone with the constant transverse load in the standardized four-point bending test. The current code of practice advises using two metallic arms act as an instrument to measure the diagonal displacement of the constructing square. The size and the position of the constructing square might influence the shear modulus determination. This study aimed to investigate the size and the position effect of the square in the shear field test method. A binocular stereo vision system has been employed to determine the 3D displacement of a grid of target points. Six glue laminated beams were produced and tested. Analysis of Variance (ANOVA) was performed on the acquired data to evaluate the significance of the size effect and the position effect of the square. The results have shown that the size of the square has a noticeable influence on the value of shear modulus, while, the position of the square within the area with the constant shear force does not affect the measured mean shear modulus.

Keywords: shear field test method, structural-sized test, shear modulus of Glulam beam, photogrammetry approach

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21579 Electric Field Impact on the Biomass Gasification and Combustion Dynamics

Authors: M. Zake, I. Barmina, R. Valdmanis, A. Kolmickovs

Abstract:

Experimental investigations of the DC electric field effect on thermal decomposition of biomass, formation of the axial flow of volatiles (CO, H2, CxHy), mixing of volatiles with swirling airflow at low swirl intensity (S ≈ 0.2-0.35), their ignition and on formation of combustion dynamics are carried out with the aim to understand the mechanism of electric field influence on biomass gasification, combustion of volatiles and heat energy production. The DC electric field effect on combustion dynamics was studied by varying the positive bias voltage of the central electrode from 0.6 kV to 3 kV, whereas the ion current was limited to 2 mA. The results of experimental investigations confirm the field-enhanced biomass gasification with enhanced release of volatiles and the development of endothermic processes at the primary stage of thermochemical conversion of biomass determining the field-enhanced heat energy consumption with the correlating decrease of the flame temperature and heat energy production at this stage of flame formation. Further, the field-enhanced radial expansion of the flame reaction zone correlates with a more complete combustion of volatiles increasing the combustion efficiency by 3 % and decreasing the mass fraction of CO, H2 and CxHy in the products, whereas by 10 % increases the average volume fraction of CO2 and the heat energy production downstream the combustor increases by 5-10 %

Keywords: biomass, combustion, electrodynamic control, gasification

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21578 Direct Measurements of the Electrocaloric Effect in Solid Ferroelectric Materials via Thermoreflectance

Authors: Layla Farhat, Mathieu Bardoux, Stéphane Longuemart, Ziad Herro, Abdelhak Hadj Sahraoui

Abstract:

Electrocaloric (EC) effect refers to the isothermal entropy or adiabatic temperature changes of a dielectric material induced by an external electric field. This phenomenon has been largely ignored for application because only modest EC effects (2.6

Keywords: electrocaloric effect, thermoreflectance, ferroelectricity, cooling system

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21577 The Effect of the Crystal Field Interaction on the Critical Temperatures and the Sublattice Magnetizations of a Mixedspin-3/2 and Spin-5/2 Ferromagnetic System

Authors: Fathi Abubrig, Mohamed Delfag, Suad Abuzariba

Abstract:

The influence of the crystal field interactions on the mixed spin-3/2 and spin-5/2 ferromagnetic Ising system is considered by using the mean field theory based on Bogoliubov inequality for the Gibbs free energy. The ground-state phase diagram is constructed, the phase diagrams of the second-order critical temperatures are obtained, and the thermal variation of the sublattice magnetizations is investigated in detail. We find some interesting phenomena for the sublattice magnetizations at particular values of the crystal field interactions.

Keywords: crystal field, Ising system, ferromagnetic, magnetization, phase diagrams

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21576 Mass Transfer in Reactor with Magnetic Field Generator

Authors: Tomasz Borowski, Dawid Sołoducha, Rafał Rakoczy, Marian Kordas

Abstract:

The growing interest in magnetic fields applications is visible due to the increased number of articles on this topic published in the last few years. In this study, the influence of various magnetic fields (MF) on the mass transfer process was examined. To carry out the prototype set-up equipped with an MF generator that is able to generate a pulsed magnetic field (PMF), oscillating magnetic field (OMF), rotating magnetic field (RMF) and static magnetic field (SMF) was used. To demonstrate the effect of MF’s on mass transfer, the calcium carbonate precipitation process was selected. To the vessel with attached conductometric probes and placed inside the generator, specific doses of calcium chloride and sodium carbonate were added. Electrical conductivity changes of the mixture inside the vessel were measured over time until equilibrium was established. Measurements were conducted for various MF strengths and concentrations of added chemical compounds. Obtained results were analyzed, which allowed to creation of mathematical correlation models showing the influence of MF’s on the studied process.

Keywords: mass transfer, oscillating magnetic field, rotating magnetic field, static magnetic field

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21575 Fractional-Order Modeling of GaN High Electron Mobility Transistors for Switching Applications

Authors: Anwar H. Jarndal, Ahmed S. Elwakil

Abstract:

In this paper, a fraction-order model for pad parasitic effect of GaN HEMT on Si substrate is developed and validated. Open de-embedding structure is used to characterize and de-embed substrate loading parasitic effects. Unbiased device measurements are implemented to extract parasitic inductances and resistances. The model shows very good simulation for S-parameter measurements under different bias conditions. It has been found that this approach can improve the simulation of intrinsic part of the transistor, which is very important for small- and large-signal modeling process.

Keywords: fractional-order modeling, GaNHEMT, si-substrate, open de-embedding structure

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21574 Investigation of Threshold Voltage Shift in Gamma Irradiated N-Channel and P-Channel MOS Transistors of CD4007

Authors: S. Boorboor, S. A. H. Feghhi, H. Jafari

Abstract:

The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 device, which is an integrated circuit including P-channel and N-channel MOS transistors, was investigated for low dose gamma irradiation under different gate bias voltages. We used linear extrapolation method to extract threshold voltage from ID-VG characteristic curve. The results showed that the threshold voltage shift was approximately 27.5 mV/Gy for N-channel and 3.5 mV/Gy for P-channel transistors at the gate bias of |9 V| after irradiation by Co-60 gamma ray source. Although the sensitivity of the devices under test were strongly dependent to biasing condition and transistor type, the threshold voltage shifted linearly versus accumulated dose in all cases. The overall results show that the application of CD4007 as an electronic buffer in a radiation therapy system is limited by TID damage. However, this integrated circuit can be used as a cheap and sensitive radiation dosimeter for accumulated dose measurement in radiation therapy systems.

Keywords: threshold voltage shift, MOS transistor, linear extrapolation, gamma irradiation

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21573 Pyroelectric Effect on Thermoelectricity of AlInN/GaN Heterostructures

Authors: B. K. Sahoo

Abstract:

Superior thermoelectric (TE) efficiency of AlₓIn₁₋ₓN /GaN heterostructure (HS) requires a minimum value of thermal conductivity (k). A smaller k would lead to even further increase of TE figure of merit (ZT). The built-in polarization (BIP) electric field of AlₓIn₁₋ₓN /GaN HS enhances S, and σ of the HS, however, the effect of BIP field on k of the HS has not been explored. Study of thermal conductivities (k: without BIP and kp: including BIP) vs temperature predicts pyroelectric behavior of HS. Both k and kp show crossover at a temperature Tp. The result shows that below Tp, kp < k due to negative thermal expansion coefficient (TEC). However, above Tp, kp > k. Above Tp, piezoelectric polarization dominates over spontaneous polarization due to positive TEC. This generates more lattice mismatch resulting in the significant contribution of BIP field to thermal conductivity. Thus, Tp can be considered as primary pyroelectric transition temperature of the material as above Tp thermal expansion takes place which is the reason for the secondary pyroelectric effect. It is found that below Tp, kp is decreased; thus enhancing TE efficiency. For x=0.1, 0.2 and 0.3; Tp are close to 200, 210 and 260 K, respectively. Thus, k of the HS can be modified as per requirement by tailoring the Al composition; making it suitable simultaneously for the design of high-temperature pyroelectric sensors and TE module for maximum power production.

Keywords: AlₓIn₁₋ₓN/GaN heterostructure, built in polarization, pyroelectric behavior, thermoelectric efficiency

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21572 Effect of Geomagnetic Field on Motion of Conductor

Authors: Bharti Gupta, Alaukik Sharma

Abstract:

The first aim is to determine the effect of the Earth's magnetic field on the motion of a conductor to evaluate the variations of the orbital elements of the conductor due to these effects. The effects of Earth's magnetic field on the motion of conductors have been studied at different heights, longitudes and latitudes. When the conductor cut the geomagnetic line of force, then an electro-motive force (EMF) is induced across to the conductor. Due to this induced EMF, an induced current will flow through the conductor. Resulting, a Lorentz force will be applied on the conductor who opposes the motion of the conductor. So our second aim is to determine the accurate value of Induced EMF and induced Lorentz Force at different heights, longitudes and latitudes.

Keywords: induced EMF, Lorentz force, geomagnetic lines of force, moving conductor

Procedia PDF Downloads 156
21571 Field Effects on Seed Germination of Phaseolus Vulgaris, Early Seedling Growth and Chemical Composition

Authors: Najafi S., Heidai R., Jamei R., Tofigh F.

Abstract:

In order to study the effects of magnetic field on the root system and growth of Phaseolus vulgaris, an experiment was conducted in 2012. The possible involvement of magnetic field (MF) pretreatment in physiological factors of Phaseolus vulgaris was investigated. Seeds were subjected to 10 days with 1.8 mT of magnetic field for 1h per day. MF pretreatment decreased the plant height, fresh and dry weight, length of root and length of shoot, Chlorophyll a, Chlorophyll b and carotenoid in 10 days old seedling. In addition, activity of enzymes such as Catalase and Guaiacol peroxidase was decreased due to MF exposure. Also, the total Protein and DPPH content of the treated by magnetic field was not significantly changed in compare to control groups, while the flavonoid, Phenol and prolin content of the treated of the treated by magnetic field was significantly changed in compare to control groups. Lateral branches of roots and secondary roots increased with MF. The results suggest that pretreatment of this MF plays important roles in changes in crop productivity. In all cases there was observed a slight stimulating effect of the factors examined. The growth dynamics were weakened. The plants were shorter. Moreover, the effect of a magnetic field on the crop of Phaseolus vulgaris and its structure was small.

Keywords: carotenoid, Chlorophyll a, Chlorophyll b, DPPH, enzymes, flavonoid, germination, growth, phenol, proline, protein, magnetic field, phaseolus vulgaris

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21570 The DC Behavioural Electrothermal Model of Silicon Carbide Power MOSFETs under SPICE

Authors: Lakrim Abderrazak, Tahri Driss

Abstract:

This paper presents a new behavioural electrothermal model of power Silicon Carbide (SiC) MOSFET under SPICE. This model is based on the MOS model level 1 of SPICE, in which phenomena such as Drain Leakage Current IDSS, On-State Resistance RDSon, gate Threshold voltage VGSth, the transconductance (gfs), I-V Characteristics Body diode, temperature-dependent and self-heating are included and represented using behavioural blocks ABM (Analog Behavioural Models) of Spice library. This ultimately makes this model flexible and easily can be integrated into the various Spice -based simulation softwares. The internal junction temperature of the component is calculated on the basis of the thermal model through the electric power dissipated inside and its thermal impedance in the form of the localized Foster canonical network. The model parameters are extracted from manufacturers' data (curves data sheets) using polynomial interpolation with the method of simulated annealing (S A) and weighted least squares (WLS). This model takes into account the various important phenomena within transistor. The effectiveness of the presented model has been verified by Spice simulation results and as well as by data measurement for SiC MOS transistor C2M0025120D CREE (1200V, 90A).

Keywords: SiC power MOSFET, DC electro-thermal model, ABM Spice library, SPICE modelling, behavioural model, C2M0025120D CREE.

Procedia PDF Downloads 580
21569 Research of the Rotation Magnetic Field Current Driven Effect on Pulsed Plasmoid Acceleration of Electric Propulsion

Authors: X. F. Sun, X. D. Wen, L. J. Liu, C. C. Wu, Y. H. Jia

Abstract:

The field reversed closed magnetic field configuration plasmoid has a potential for large thrust and high power propulsion missions such as deep space exploration due to its high plasma density and larger azimuthal current, which will be a most competitive program for the next generation electric propulsion technology. Moreover, without the electrodes, it also has a long lifetime. Thus, the research on this electric propulsion technology is quite necessary. The plasmoid will be formatted and accelerated by applying a rotation magnetic field (RMF) method. And, the essence of this technology lies on the generation of the azimuthal electron currents driven by RMF. Therefore, the effect of RMF current on the plasmoid acceleration efficiency is a concerned problem. In the paper, the influences of the penetration process of RMF in plasma, the relations of frequency and amplitude of input RF power with current strength and the RMF antenna configuration on the plasmoid acceleration efficiency will be given by a two-fluid numerical simulation method. The results show that the radio-frequency and input power have remarkable influence on the formation and acceleration of plasmoid. These results will provide useful advice for the development, and optimized designing of field reversed configuration plasmoid thruster.

Keywords: rotation magnetic field, current driven, plasma penetration, electric propulsion

Procedia PDF Downloads 116