Search results for: gate leakage

Authors: Z. Herceg, V. Stulic, T. Vukusic, A. Rezek Jambrak

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Gas phase plasma treatment is a new nonthermal technology used for food and water decontamination. In this study, we have investigated influence of the gas phase plasma treatment on yeast cells of S. cerevisiae. Sample was composed of 10 mL of yeast suspension and 190 mL of 0.01 M NaNO₃ with a medium conductivity of 100 µS/cm. Samples were treated in a glass reactor with a point- to-plate electrode configuration (high voltage electrode-titanium wire in the gas phase and grounded electrode in the liquid phase). Air or argon were injected into the headspace of the reactor at the gas flow of 5 L/min. Frequency of 60, 90 and 120 Hz, time of 5 and 10 min and positive polarity were defined parameters. Inactivation was higher with the applied higher frequency, longer treatment time and injected argon. Inactivation was not complete which resulted in complete recovery. Cellular leakage (260 nm and 280 nm) was higher with a longer treatment time and higher frequency. Leakage at 280 nm which defines a leakage of proteins was higher than leakage at 260 nm which defines a leakage of nucleic acids. The authors would like to acknowledge the support by Croatian Science Foundation and research project 'Application of electrical discharge plasma for preservation of liquid foods'.

Keywords: Saccharomyces cerevisiae, inactivation, gas-phase plasma treatment, cellular leakage

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Authors: Suruchi Saini, Hitender Kumar Tyagi

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With the rapid progress of the nanotechnology industry, it is becoming increasingly important to have compact semiconductor devices to function and offer the best results at various technology nodes. While performing the scaling of the device, several short-channel effects occur. To minimize these scaling limitations, some device architectures have been developed in the semiconductor industry. FinFET is one of the most promising structures. Also, the double-gate 2D Fin field effect transistor has the benefit of suppressing short channel effects (SCE) and functioning well for less than 14 nm technology nodes. In the present research, the MuGFET simulation tool is used to analyze and explain the electrical behaviour of a double-gate 2D Fin field effect transistor. The drift-diffusion and Poisson equations are solved self-consistently. Various models, such as Fermi-Dirac distribution, bandgap narrowing, carrier scattering, and concentration-dependent mobility models, are used for device simulation. The transfer and output characteristics of the double-gate 2D Fin field effect transistor are determined at 10 nm technology node. The performance parameters are extracted in terms of threshold voltage, trans-conductance, leakage current and current on-off ratio. In this paper, the device performance is analyzed at different structure parameters. The utilization of the Id-Vg curve is a robust technique that holds significant importance in the modeling of transistors, circuit design, optimization of performance, and quality control in electronic devices and integrated circuits for comprehending field-effect transistors. The FinFET structure is optimized to increase the current on-off ratio and transconductance. Through this analysis, the impact of different channel widths, source and drain lengths on the Id-Vg and transconductance is examined. Device performance was affected by the difficulty of maintaining effective gate control over the channel at decreasing feature sizes. For every set of simulations, the device's features are simulated at two different drain voltages, 50 mV and 0.7 V. In low-power and precision applications, the off-state current is a significant factor to consider. Therefore, it is crucial to minimize the off-state current to maximize circuit performance and efficiency. The findings demonstrate that the performance of the current on-off ratio is maximum with the channel width of 3 nm for a gate length of 10 nm, but there is no significant effect of source and drain length on the current on-off ratio. The transconductance value plays a pivotal role in various electronic applications and should be considered carefully. In this research, it is also concluded that the transconductance value of 340 S/m is achieved with the fin width of 3 nm at a gate length of 10 nm and 2380 S/m for the source and drain extension length of 5 nm, respectively.

Keywords: current on-off ratio, FinFET, short-channel effects, transconductance

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Authors: Carla Pérez-Chirinos Buxadé, Bruno Fernández-Valdés, Mónica Morral-Yepes, Sílvia Tuyà Viñas, Josep Maria Padullés Riu, Gerard Moras Feliu

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There is a long way to explore all the possible applications inertial measurement units (IMUs) have in the sports field. The aim of this study was to evaluate the validity of a new application on the use of these wearable sensors, specifically it was to evaluate a magnet-based timing system (M-BTS) for timing gate-to-gate in an alpine ski slalom using the magnetometer embedded in an IMU. This was a validation study. The criterion validity of time measured by the M-BTS was assessed using the 95% error range against actual time obtained from photocells. The experiment was carried out with first-and second-year junior skiers performing a ski slalom on a ski training slope. Eight alpine skiers (17.4 ± 0.8 years, 176.4 ± 4.9 cm, 67.7 ± 2.0 kg, 128.8 ± 26.6 slalom FIS-Points) participated in the study. An IMU device was attached to the skier’s lower back. Skiers performed a 40-gate slalom from which four gates were assessed. The M-BTS consisted of placing four bar magnets buried into the snow surface on the inner side of each gate’s turning pole; the magnetometer built into the IMU detected the peak-shaped magnetic field when passing near the magnets at a certain speed. Four magnetic peaks were detected. The time compressed between peaks was calculated. Three inter-gate times were obtained for each system: photocells and M-BTS. The total time was defined as the time sum of the inter-gate times. The 95% error interval for the total time was 0.050 s for the ski slalom. The M-BTS is valid for timing gate-to-gate in an alpine ski slalom. Inter-gate times can provide additional data for analyzing a skier’s performance, such as asymmetries between left and right foot.

Keywords: gate crossing time, inertial measurement unit, timing system, wearable sensor

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Authors: Z. Herceg, V. Stulic, T. Vukusic, A. Rezek Jambrak

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High voltage electrical discharge plasmas are new nonthermal developing techniques used for water decontamination. To the full understanding of cell inactivation mechanisms, this study brings inactivation, recovery and cellular leakage of L. innocua cells before and after the treatment. Bacterial solution (200 mL) of L. innocua was treated in a glass reactor with a point-to-plate electrode configuration (high voltage electrode-titanium wire, was in the gas phase and grounded electrode was in the liquid phase). Argon was injected into the headspace of the reactor at the gas flow of 5 L/min. Frequency of 60, 90 and 120 Hz, time of 5 and 10 min, positive polarity and conductivity of media of 100 µS/cm were chosen to define listed parameters. With a longer treatment time inactivation was higher as well as the increase in cellular leakage. Despite total inactivation recovery of cells occurred probably because of a high leakage of proteins, compared to lower leakage of nucleic acids (DNA and RNA). In order to define mechanisms of inactivation further research is needed.

Keywords: Listeria innocua ATCC 33092, inactivation, gas phase plasma, cellular leakage, recovery of cells

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Authors: Dawit Burusie Abdi, Mamidala Jagadesh Kumar

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In this paper, using 2D TCAD simulations, the application of a dual material gate (DMG) for suppressing ambipolar conduction in a tunnel field effect transistor (TFET) is demonstrated. Using the proposed DMG concept, the ambipolar conduction can be effectively suppressed even if the drain doping is as high as that of the source doping. Achieving this symmetrical doping, without the ambipolar conduction in TFETs, gives the advantage of realizing both n-type and p-type devices with the same doping sequences. Furthermore, the output characteristics of the DMG TFET exhibit a good saturation when compared to that of the gate-drain underlap approach. This improved behavior of the DMG TFET makes it a good candidate for inverter based logic circuits.

Keywords: dual material gate, suppressing ambipolar current, symmetrically doped TFET, tunnel FETs, PNPN TFET

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Authors: Junhong Feng, Wenyu Lu, Xinhong Cheng, Li Zheng, Yuehui Yu

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The effects of proton irradiation on the properties of gate oxide were evaluated by monitoring the static parameters (such as threshold voltage and on-resistance) and dynamic parameters (Miller plateau time) of 1700V SiC VDMOS before and after proton irradiation. The incident proton energy was 3MeV, and the doses were 5 × 10¹² P / cm², 1 × 10¹³ P / cm², respectively. The results show that the threshold voltage of MOS exhibits negative drift under proton irradiation, and the near-interface traps in the gate oxide layer are occupied by holes generated by the ionization effect of irradiation, thus forming more positive charges. The basis for selecting TMiller is that the change time of Vgs is the time when Vds just shows an upward trend until it rises to a stable value. The degradation of the turn-off time of the Miller platform verifies that the capacitance Cgd becomes larger, reflecting that the gate oxide layer is introduced into the trap by the displacement effect caused by proton irradiation, and the interface state deteriorates. As a more sensitive area in the irradiation process, the gate oxide layer will be optimized for its parameters (such as thickness, type, etc.) in subsequent studies.

Keywords: SiC VDMOS, proton radiation, Miller time, gate oxide

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Authors: Gu Dongxing, Li Yuxuan, Nong Tengxiao, Burra Venkata Durga Kumar

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Since computers are widely used in business models, more and more companies choose to store important information in computers to improve productivity. However, this information can be compromised in many cases, such as when it is stored locally on the company's computers or when it is transferred between servers and clients. Of these important information leaks, source code leaks are probably the most costly. Because the source code often represents the core technology of the company, especially for the Internet companies, source code leakage may even lead to the company's core products lose market competitiveness, and then lead to the bankruptcy of the company. In recent years, such as Microsoft, AMD and other large companies have occurred source code leakage events, suffered a huge loss. This reveals to us the importance and necessity of preventing source code leakage. This paper aims to find ways to prevent source code leakage based on the direction of operating system, and based on the fact that most companies use Linux or Linux-like system to realize the interconnection between server and client, to discuss how to reduce the possibility of source code leakage during data transmission.

Keywords: data transmission, Linux, source code, operating system

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Authors: Petter Eklund, Jonathan Sjölund, Sandra Eriksson, Mats Leijon

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The spoke type rotor can be used to obtain magnetic flux concentration in permanent magnet machines. This allows the air gap magnetic flux density to exceed the remanent flux density of the permanent magnets but gives problems with leakage fluxes in the magnetic circuit. The end leakage flux of one spoke type permanent magnet rotor design is studied through measurements and finite element simulations. The measurements are performed in the end regions of a 12 kW prototype generator for a vertical axis wind turbine. The simulations are made using three dimensional finite elements to calculate the magnetic field distribution in the end regions of the machine. Also two dimensional finite element simulations are performed and the impact of the two dimensional approximation is studied. It is found that the magnetic leakage flux in the end regions of the machine is equal to about 20% of the flux in the permanent magnets. The overestimation of the performance by the two dimensional approximation is quantified and a curve-fitted expression for its behavior is suggested.

Keywords: end effects, end leakage flux, permanent magnet machine, spoke type rotor

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Authors: P. Geetha, R. S. D. Wahida Banu

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The crowning advances in Silicon based electronic technology have dominated the computation world for the past decades. The captivating performance of Si devices lies in sustainable scaling down of the physical dimensions, by that increasing device density and improved performance. But, the fundamental limitations due to physical, technological, economical, and manufacture features restrict further miniaturization of Si based devices. The pit falls are due to scaling down of the devices such as process variation, short channel effects, high leakage currents, and reliability concerns. To fix the above-said problems, it is needed either to follow a new concept that will manage the current hitches or to support the available concept with different materials. The new concept is to design spintronics, quantum computation or two terminal molecular devices. Otherwise, presently used well known three terminal devices can be modified with different materials that suits to address the scaling down difficulties. The first approach will occupy in the far future since it needs considerable effort; the second path is a bright light towards the travel. Modelling paves way to know not only the current-voltage characteristics but also the performance of new devices. So, it is desirable to model a new device of suitable gate control and project the its abilities towards capability of handling high current, high power, high frequency, short delay, and high velocity with excellent electronic and optical properties. Carbon nanotube became a thriving material to replace silicon in nano devices. A well-planned optimized utilization of the carbon material leads to many more advantages. The unique nature of this organic material allows the recent developments in almost all fields of applications from an automobile industry to medical science, especially in electronics field-on which the automation industry depends. More research works were being done in this area. This paper reviews the carbon nanotube field effect transistor with various gate configurations, number of channel element, CNT wall configurations and different modelling techniques.

Keywords: array of channels, carbon nanotube field effect transistor, double gate transistor, gate wrap around transistor, modelling, multi-walled CNT, single-walled CNT

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Authors: Patikineti Sreenivasulu, K. srinivasa Rao, A. Vinaya Babu

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The demand for portability, performance and high functional integration density of digital devices leads to the scaling of complementary metal oxide semiconductor (CMOS) devices inevitable. The increase in power consumption, coupled with the increasing demand for portable/hand-held electronics, has made power consumption a dominant concern in the design of VLSI circuits today. MTCMOS technology provides low leakage and high performance operation by utilizing high speed, low Vt (LVT) transistors for logic cells and low leakage, high Vt (HVT) devices as sleep transistors. Sleep transistors disconnect logic cells from the supply and/or ground to reduce the leakage in the sleep mode. In this technology, energy consumption while doing the mode transition and minimum time required to turn ON the circuit upon receiving the wake up signal are issues to be considered because these can adversely impact the performance of VLSI circuit. In this paper we are introducing an enhancing method of MTCMOS technology to optimize the power in MTCMOS sequential circuits.

Keywords: power consumption, ultra-low power, leakage, sub threshold, MTCMOS

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Authors: N. Massoum, B. Bouazza

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In this paper, we have developed a numerical simulation model to describe the electrical properties of GaInP MESFET with submicron gate (Lg = 0.5 µm). This model takes into account the three-dimensional (3D) distribution of the load in the short channel and the law effect of mobility as a function of electric field. Simulation software based on a stochastic method such as Monte Carlo has been established. The results are discussed and compared with those of the experiment. The result suggests experimentally that, in a very small gate length in our devices (smaller than 40 nm), short-channel tunneling explains the degradation of transistor performance, which was previously enhanced by velocity overshoot.

Keywords: Monte Carlo simulation, transient electron transport, MESFET device, simulation software

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Authors: Anil S. Khopkar, Kartik S. Pandya

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Overvoltage in power systems is a phenomenon that cannot be avoided. However, it can be controlled to a certain extent. Power system equipment is to be protected against overvoltage to avoid system failure. Metal Oxide Surge Arresters (MOSA) are connected to the system for the protection of the power system against overvoltages. The MOSA will behave as an insulator under normal working conditions, where it offers a conductive path under voltage conditions. MOSA consists of zinc oxide elements (ZnO Blocks), which have non-linear V-I characteristics. ZnO blocks are connected in series and fitted in ceramic or polymer housing. This degrades due to the aging effect under continuous operation. Degradation of zinc oxide elements increases the leakage current flowing from the surge arresters. This Increased leakage current results in the increased temperature of the surge arrester, which further decreases the resistance of zinc oxide elements. As a result, leakage current increases, which again increases the temperature of a MOSA. This creates thermal runaway conditions for MOSA. Once it reaches the thermal runaway condition, it cannot return to normal working conditions. This condition is a primary cause of premature failure of surge arresters, as MOSA constitutes a core protective device for electrical power systems against transients. It contributes significantly to the reliable operation of the power system network. Hence, the condition monitoring of surge arresters should be done at periodic intervals. Online and Offline condition monitoring techniques are available for surge arresters. Offline condition monitoring techniques are not very popular as they require removing surge arresters from the system, which requires system shutdown. Hence, online condition monitoring techniques are very popular. This paper presents the evaluation technique for the surge arrester condition based on the leakage current analysis. Maximum amplitude of total leakage current (IT), Maximum amplitude of fundamental resistive leakage current (IR) and maximum amplitude of third harmonic resistive leakage current (I3rd) have been analyzed as indicators for surge arrester condition monitoring.

Keywords: metal oxide surge arrester (MOSA), over voltage, total leakage current, resistive leakage current

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Authors: Le Chen

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This paper presents an efficient tool platform scheme to ensure quality protection throughout the software development process. The main principle is to manage the information of requirements, design, development, testing, operation and maintenance process with proper tools, and to set up the quality standards of each process. Through the tools’ display and summary of quality standards, the quality standards can be visualizad and ready for policy decision, which is called Quality Gate in this paper. In addition, the tools are also integrated to achieve the exchange and relation of information which highly improving operational efficiency. In this paper, the feasibility of the scheme is verified by practical application of development projects, and the overall information display and data mining are proposed to be further improved.

Keywords: efficiency, quality gate, software process, tools

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Authors: Kunal Das, Priya Sengupta, Abhishek K. Singh

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Pin assignment, scheduling, routing and error detection for arbitrary biochemical protocols in Digital Microfluidic Biochip have been reported in this paper. The research work is concentrating on pin assignment for 2 or 3 droplets routing in the arbitrary biochemical protocol, scheduling and routing in m × n biochip. The volumetric error arises due to droplet split in the biochip. The volumetric error detection is also addressed using biochip AND logic gate which is known as microfluidic AND or mAND gate. The algorithm for pin assignment for m × n biochip required m+n-1 numbers of pins. The basic principle of this algorithm is that no same pin will be allowed to be placed in the same column, same row and diagonal and adjacent cells. The same pin should be placed a distance apart such that interference becomes less. A case study also reported in this paper.

Keywords: digital microfludic biochip, cross-contamination, pin assignment, microfluidic AND gate

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Authors: Mahmoud Y. M. Ahmed, Ahmed Konsowa, Mostafa Sami, Ayman Mosallam

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Fukushima nuclear accident (Japan 2011) has drawn attention to the issue of gas leakage from hazardous facilities through building boundaries. The rapidly increasing investments in nuclear stations have made the ability to predict, and prevent, gas leakage a rather crucial issue both environmentally and economically. Leakage monitoring for underground facilities is rather complicated due to the combination of Reinforced Concrete Shear Wall (RCSW) and soil. In the framework of a recent research conducted by the authors, the gas insulation capabilities of RCSW-soil combination have been investigated via a lab-scale experimental work. Despite their accuracy, experimental investigations are expensive, time-consuming, hazardous, and lack for flexibility. Numerically simulating the gas leakage as a fluid flow problem based on Computational Fluid Dynamics (CFD) modeling approach can provide a potential alternative. This novel implementation of CFD approach is the topic of the present paper. The paper discusses the aspects of modeling the gas flow through porous media that resemble the RCSW both isolated and combined with the normal soil. A commercial CFD package is utilized in simulating this fluid flow problem. A fixed RCSW layer thickness is proposed, air is taken as the leaking gas, whereas the soil layer is represented as clean sand with variable properties. The variable sand properties include sand layer thickness, fine fraction ratio, and moisture content. The CFD simulation results almost demonstrate what has been found experimentally. A soil layer attached next to a cracked reinforced concrete section plays a significant role in reducing the gas leakage from that cracked section. This role is found to be strongly dependent on the soil specifications.

Keywords: RCSW, gas leakage, Pressure Decay Method, hazardous underground facilities, CFD

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Authors: C. S Lee, W. C. Hsu, H. Y. Liu, C. J. Lin, S. C. Yao, Y. T. Shen, Y. C. Lin

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In₀.₁₈Al₀.₈₂N/AlN/GaN metal-oxide-semiconductor heterostructure field-effect transistors (MOS-HFETs) having Al₂O₃ gate-dielectric and backside metal-trench structure are investigated. The Al₂O₃ gate oxide was formed by using a cost-effective non-vacuum ultrasonic spray pyrolysis deposition (USPD) method. In order to enhance the heat dissipation efficiency, metal trenches were etched 3-µm deep and evaporated with a 150-nm thick Ni film on the backside of the Si substrate. The present In₀.₁₈Al₀.₈₂N/AlN/GaN MOS-HFET (Schottky-gate HFET) has demonstrated improved maximum drain-source current density (IDS, max) of 1.08 (0.86) A/mm at VDS = 8 V, gate-voltage swing (GVS) of 4 (2) V, on/off-current ratio (Ion/Ioff) of 8.9 × 10⁸ (7.4 × 10⁴), subthreshold swing (SS) of 140 (244) mV/dec, two-terminal off-state gate-drain breakdown voltage (BVGD) of -191.1 (-173.8) V, turn-on voltage (Von) of 4.2 (1.2) V, and three-terminal on-state drain-source breakdown voltage (BVDS) of 155.9 (98.5) V. Enhanced power performances, including saturated output power (Pout) of 27.9 (21.5) dBm, power gain (Gₐ) of 20.3 (15.5) dB, and power-added efficiency (PAE) of 44.3% (34.8%), are obtained. Superior breakdown and RF power performances are achieved. The present In₀.₁₈Al₀.₈₂N/AlN/GaN MOS-HFET design with backside metal-trench is advantageous for high-power circuit applications.

Keywords: backside metal-trench, InAlN/AlN/GaN, MOS-HFET, non-vacuum ultrasonic spray pyrolysis deposition

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Authors: Hocine Terrab , Abdelhafid Bayadi, Adel Kara, Ayman El-Hag

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Insulator flashover under polluted conditions has been a serious threat on the reliability of power systems. It is known that the flashover process is mainly affected by the environmental conditions such as; the pollution level and humidity. Those are the essential parameters influencing the wetting process. This paper presents an investigation of the characteristics of leakage current (LC) developed on the surface of porcelain insulator at contaminated conditions under AC voltage. The study is done in an artificial fog chamber and the LC is characterized for different stages; dry, wetted and presence of discharge activities. Time-frequency and spectral analysis are adopted to calculate the evolution of LC characteristics with various stages prior to flashover occurrence. The preliminary results could be used in analysing the LC to develop more effective diagnosis of early signs of dry band arcing as an indication for insulation washing.

Keywords: flashover, harmonic components, leakage current, phase angle, statistical analysis

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Authors: Sarakorn Sukaviriya

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This paper describes the inspection procedure, root cause analysis, the rectification of crack, and how to apply the procedure with other similar plants. During the operation of the steam turbine (620MW), instruments such as speed sensor of steam turbine, the servo valve of main stop valve and electrical wires were malfunction caused by leakage steam from main steam governing valve. Therefore, the power plant decided to shutdown steam turbines for figuring out the cause of leakage steam. Inspection techniques to be applied in this problem were microstructure testing (SEM), pipe stress analysis (FEM) and non-destructive testing. The crack was initially found on main governing valve’s weldment by visual inspection. To analyze more precisely, pipe stress analysis and microstructure testing were applied and results indicated that the crack was intergranular and originated from the weld defect. This weld defect caused the notch with high-stress concentration which created crack and then propagated to steam leakage. The major root cause of this problem was an inappropriate welding process, which created a weld defect. To repair this joint from damage, we used a welding technique by producing refinement of coarse grain HAZ and eliminating stress concentration. After the weldment was completely repaired, other adjacent weldments still had risk. Hence, to prevent any future cracks, non-destructive testing (NDT) shall be applied to all joints in order to ensure that there will be no indication of crack.

Keywords: steam-pipe leakage, steam leakage, weld crack analysis, weld defect

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Authors: Kuan Yu Lin, Shih Chih Chen

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This study focuses on the Al/HfO₂/Si/Al structure to explore the electrical properties of the structure. This experiment uses a radio frequency magnetron sputtering system to deposit high dielectric materials on p-type silicon substrates of 1~10 Ω-cm (100). Consider the hafnium dioxide film as a dielectric layer. Post-deposition annealing at 750°C in nitrogen atmosphere. Electron beam evaporation of metallic aluminum is then used to complete the top/bottom electrodes. The metal is post-annealed at 450°C for 20 minutes in a nitrogen environment to complete the MOS component. Its dielectric constant, equivalent oxide layer thickness, oxide layer defects, and leakage current mechanism are discussed. At PDA 750°C-5s, the maximum k value was found to be 21.2, and the EOT was 3.68nm.

Keywords: high-k gate dielectrics, HfO₂, post deposition annealing, RF magnetic

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Authors: N. M. M. Ammar, S. M. Mustaqim, N. M. Nadzir

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The most important problem occurs on oil spills in sea water is to reduce the oil spills size. This study deals with the development of high pressurized nozzle using dispersion method for oil leakage in offshore. 3D numerical simulation results were obtained using ANSYS Fluent 13.0 code and correlate with the experimental data for validation. This paper studies the contribution of the process on flow speed and pressure of the flow from two different geometrical designs of nozzles and to generate a spray pattern suitable for dispersant application. Factor of size distribution of droplets generated by the nozzle is calculated using pressures ranging from 2 to 6 bars. Results obtain from both analyses shows a significant spray pattern and flow distribution as well as distance. Results also show a significant contribution on the effect of oil leakage in terms of the diameter of the oil spills break up.

Keywords: arc nozzle, CFD simulation, droplets, oil spills

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Authors: Saifurahman Fayiz

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E-government has become a widespread focus of government efforts in various countries around the world. Many governments around the world have been adopted and introduced e-government systems. This research examines the implementation of the Information& communication technology (ICTS) Model in the Kabul Municipality. The objective of this research is to propose an ICT model in the Kabul Municipality to prevent revenue leakage. The research methodology consists qualitative research method based on a comparative case study. The research findings propose that implementing ICT prevent revenue leakage, increases transparency and paves the way for better services. The key conclusion of this research is that the practice of advanced technology in revenue collection paves the way for transparency and provides services in a decent way. The usage of experiences from other Municipalities, especially Jakarta province and Mitaka Municipality Helps KM to improve revenue and provide better services to the citizens

Keywords: E-government, ICT, municipality, revenue

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Authors: Aleksey Fedorov

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Building a scalable platform for quantum computing remains one of the most challenging tasks in quantum science and technologies. However, the implementation of most important quantum operations with qubits (quantum analogues of classical bits), such as multiqubit Toffoli gate, requires either a polynomial number of operation or a linear number of operations with the use of ancilla qubits. Therefore, the reduction of the number of operations in the presence of scalability is a crucial goal in quantum information processing. One of the most elegant ideas in this direction is to use qudits (multilevel systems) instead of qubits and rely on additional levels of qudits instead of ancillas. Although some of the already obtained results demonstrate a reduction of the number of operation, they suffer from high complexity and/or of the absence of scalability. We show a strong reduction of the number of operations for the realization of the Toffoli gate by using qudits for a scalable multi-qudit processor. This is done on the basis of a general relation between the dimensionality of qudits and their topology of connections, that we derived.

Keywords: quantum computing, qudits, Toffoli gates, gate decomposition

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Authors: Mohand Kessal, Rachid Boucetta, Mourad Tikobaini, Mohammed Zamoum

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Leakage problem of two-component fluids flow is modeled for a transient one-dimensional homogeneous bubbly flow and developed by taking into account the effect of a leak located at the middle point of the pipeline. The corresponding three conservation equations are numerically resolved by an improved characteristic method. The obtained results are explained and commented in terms of physical impact on the flow parameters.

Keywords: fluid transients, pipelines leaks, method of characteristics, leakage problem

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Authors: A. Ardianto, M. A. Putera Agung, S. Pramusandi

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Power waterway is one of dam structures and as an intake vertical tunnel or well function for hydroelectric power plants in Jatigede area, Sumedang, West Java. Gate shaft is also one of parts the power waterway system. The paper concerns some consideration in determining a critical state parameter on the back stability analysis of gate shaft or excavation wall stability during excavation. Study analysis was carried out using without and with reinforcement system. Results study showed that reinforcement shaft could reduce the total displacement and safety factor could increases significantly. Based on the back calculation results, it was recommended to install some reinforcement materials and drainage system to reduce pore water pressure.

Keywords: power waterway, reinforcement, displacement, safety

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Authors: Anne-Loes K. Warps, Rob A. E. M. Tollenaar, Pieter J. Tanis, Jan Willem T. Dekker

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Anastomotic leakage after colorectal cancer surgery remains a severe complication. Early diagnosis and treatment are essential to prevent further adverse outcomes. In the literature, it has been suggested that earlier reintervention is associated with better survival, but anastomotic leakage can occur with a highly variable time interval to index surgery. This study aims to evaluate the time-interval between rectal cancer resection with primary anastomosis creation and reoperation, in relation to short-term outcomes, stratified for the use of a defunctioning stoma. Methods: Data of all primary rectal cancer patients that underwent elective resection with primary anastomosis during 2013-2019 were extracted from the Dutch ColoRectal Audit. Analyses were stratified for defunctioning stoma. Anastomotic leakage was defined as a defect of the intestinal wall or abscess at the site of the colorectal anastomosis for which a reintervention was required within 30 days. Primary outcomes were new stoma construction, mortality, ICU admission, prolonged hospital stay and readmission. The association between time to reoperation and outcome was evaluated in three ways: Per 2 days, before versus on or after postoperative day 5 and during primary versus readmission. Results: In total 10,772 rectal cancer patients underwent resection with primary anastomosis. A defunctioning stoma was made in 46.6% of patients. These patients had a lower anastomotic leakage rate (8.2% vs. 11.6%, p < 0.001) and less often underwent a reoperation (45.3% vs. 88.7%, p < 0.001). Early reoperations (< 5 days) had the highest complication and mortality rate. Thereafter the distribution of adverse outcomes was more spread over the 30-day postoperative period for patients with a defunctioning stoma. Median time-interval from primary resection to reoperation for defunctioning stoma patients was 7 days (IQR 4-14) versus 5 days (IQR 3-13 days) for no-defunctioning stoma patients. The mortality rate after primary resection and reoperation were comparable (resp. for defunctioning vs. no-defunctioning stoma 1.0% vs. 0.7%, P=0.106 and 5.0% vs. 2.3%, P=0.107). Conclusion: This study demonstrated that early reinterventions after anastomotic leakage are associated with worse outcomes (i.e. mortality). Maybe the combination of a physiological dip in the cellular immune response and release of cytokines following surgery, as well as a release of endotoxins caused by the bacteremia originating from the leakage, leads to a more profound sepsis. Another explanation might be that early leaks are not contained to the pelvis, leading to a more profound sepsis requiring early reoperations. Leakage with or without defunctioning stoma resulted in a different type of reinterventions and time-interval between surgery and reoperation.

Keywords: rectal cancer surgery, defunctioning stoma, anastomotic leakage, time-interval to reoperation

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Authors: Poonam A. Trambadia, Ashish V. Trambadia

Abstract:

The architecture of sultanate period of Ahmedabad had evolved just before the establishment of Mughal rule in North India. After shifting the capital of the kingdom from Patan to Ahmedabad, when the buildings and structures were being built, an interesting cultural blend happened in architecture. Many sultanate buildings in Ahmedabad historic city have resemblance with Patan including the names. Outer fortification walls and Gates were built during the rule of the third ruler in the late 15th century. All the gates had sandstone slabs supported by three arched entrance in sandstone with wooden shutter. A restoration project of Khanpur Gate was initiated in 2016. The paper identifies some evidences and some hidden layers of structures as important elements of cultural interchange while some were just forgotten in the process. The recycling of pre-existing elements of structures are examined and compared. There were layers uncovered that were hidden behind later repairs using traditional brick arch, which was taken out in the process. As the gate had partially collapsed, the restoration included piece by piece dismantling and restoring in the same sequence wherever required. The recycled materials found in the process were recorded and provided the basis for this study. The gate after this discovery sets a new example of fortification Gate built in Sultanate era. The comparison excludes Maratha and British Period Gates to avoid further confusion and focuses on 15th – 16th century sultanate architecture of Ahmedabad.

Keywords: Ahmedabad World Heritage, fortification, Indo-Islamic style, Sultanate architecture, cultural interchange

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Authors: Gupta Rajesh, Paudel Sagar, Sharma Utkarsh, Singh Amit Kumar

Abstract:

Thermal stratification has drawn much attention because of the malfunctions at various nuclear plants in U.S.A that raised significant safety concerns. The concerns due to this phenomenon relate to thermal stresses in branch pipes connected to the reactor coolant system piping. This stress limits the lifetime of the piping system, and even leading to penetrating cracks. To assess origin of valve damage in the pipeline, it is essential to determine the effect of turbulence penetration on valve leakage; since stratified flow is generally generated by turbulent penetration or valve leakage. As a result, we concluded with the help of coupled fluent-structural analysis that the pipe with less turbulence has less chance of failure there by requiring less maintenance.

Keywords: nuclear reactor coolant system, thermal stratification, turbulent penetration, coupled fluent-structural analysis, Von-Misses stress

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Authors: Kianoosh Ahadi, Mustafa Ergil

Abstract:

In this study, the event of vibrations caused by vortexes and the distribution of induced hydrodynamic forces due to vortexes on the sliding gate valves has been investigated. For this reason, a sliding valve with the help of computational fluid dynamics (CFD) software was simulated in two-dimensional )2D(, where the flow and turbulence equations were solved for three different valve openings (full, half, and 16.7 %) models. The variety of vortexes formed within the vicinity of the valve structure was investigated based on time where the trend of fluctuations and their occurrence regions have been detected. From the gathered solution dataset of the numerical simulations, the pressure coefficient (CP), the lift force coefficient (CL), the drag force coefficient (CD), and the momentum coefficient due to hydrodynamic forces (CM) were examined, and relevant figures were generated were from these results, the vortex-induced vibrations were analyzed.

Keywords: induced vibrations, computational fluid dynamics, sliding gate valves, vortexes

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Authors: Nikhil Jain, Yang Xu, Bin Yu

Abstract:

Hexagonal boron nitride (h-BN) has been used as a substrate and gate dielectric for graphene field effect transistors (GFETs). Using a graphene/h-BN/TiN (channel/dielectric/gate) stack, key material properties of h-BN were investigated i.e. dielectric strength and tunneling behavior. Work function difference between graphene and TiN results in spontaneous p-doping of graphene through a multi-layer h-BN flake. However, at high levels of current stress, n-doping of graphene is observed, possibly due to the charge transfer across the thin h-BN multi layer. Neither Direct Tunneling (DT) nor Fowler-Nordheim Tunneling (FNT) was observed in TiN/h-BN/Au hetero structures with h-BN showing two distinct volatile conduction states before breakdown. Hexagonal boron nitride emerges as a material of choice for gate dielectrics in GFETs because of robust dielectric properties and high tunneling barrier.

Keywords: graphene, transistors, conduction, hexagonal boron nitride, dielectric strength, tunneling

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Authors: Mabel Usunobun Olanipekun, Henry Ogbemudia Omoregbee

Abstract:

Anomalies such as water pipeline and hydraulic or petrochemical pipeline network leakages and bursts have significant implications for economic conditions and the environment. In order to ensure pipeline systems are reliable, they must be efficiently controlled. Wireless Sensor Networks (WSNs) have become a powerful network with critical infrastructure monitoring systems for water, oil and gas pipelines. The loss of water, oil and gas is inevitable and is strongly linked to financial costs and environmental problems, and its avoidance often leads to saving of economic resources. Substantial repair costs and the loss of precious natural resources are part of the financial impact of leaking pipes. Pipeline systems experts have implemented various methodologies in recent decades to identify and locate leakages in water, oil and gas supply networks. These methodologies include, among others, the use of acoustic sensors, measurements, abrupt statistical analysis etc. The issue of leak quantification is to estimate, given some observations about that network, the size and location of one or more leaks in a water pipeline network. In detecting background leakage, however, there is a greater uncertainty in using these methodologies since their output is not so reliable. In this work, we are presenting a scalable concept and simulation where a pressure-driven model (PDM) was used to determine water pipeline leakage in a system network. These pressure data were collected with the use of acoustic sensors located at various node points after a predetermined distance apart. We were able to determine with the use of correlation difference to determine the leakage point locally introduced at a predetermined point between two consecutive nodes, causing a substantial pressure difference between in a pipeline network. After de-noising the signal from the sensors at the nodes, we successfully obtained the exact point where we introduced the local leakage using the correlation difference model we developed.

Keywords: leakage detection, acoustic signals, pipeline network, correlation, wireless sensor networks (WSNs)

Procedia PDF Downloads 113