Search results for: scanning tunneling microscopy
2773 Electrochemical Radiofrequency Scanning Tunneling Microscopy Measurements for Fingerprinting Single Electron Transfer Processes
Authors: Abhishek Kumar, Mohamed Awadein, Georg Gramse, Luyang Song, He Sun, Wolfgang Schofberger, Stefan Müllegger
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Electron transfer is a crucial part of chemical reactions which drive everyday processes. With the help of an electro-chemical radio frequency scanning tunneling microscopy (EC-RF-STM) setup, we are observing single electron mediated oxidation-reduction processes in molecules like ferrocene and transition metal corroles. Combining the techniques of scanning microwave microscopy and cyclic voltammetry allows us to monitor such processes with attoampere sensitivity. A systematic study of such phenomena would be critical to understanding the nano-scale behavior of catalysts, molecular sensors, and batteries relevant to the development of novel material and energy applications.Keywords: radiofrequency, STM, cyclic voltammetry, ferrocene
Procedia PDF Downloads 4722772 Characterization of Self-Assembly Behavior of 1-Dodecylamine Molecules on Au (111) Surface
Authors: Wan-Tzu Yen, Yu-Chen Luo, I-Ping Liu, Po-Hsuan Yeh, Sheng-Hsun Fu, Yuh-Lang Lee
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Self-assembled characteristics and adsorption performance of 1-dodecylamine molecules on gold (Au) (111) surfaces were characterized via cyclic voltammetry (CV), surface-enhanced infrared absorption spectroscopy (SEIRAS) and scanning tunneling microscopy (STM). The present study focused on the formation of 1-dodecylamine (DDA) on a gold surface with respect to the ex-situ arrangement of an adlayer on the Au(111) surface, and phase transition at potential dynamics carried out by EC-STM. This study reveals that alkyl amine molecules were formed an adsorption pattern with highly regular “lie down shape” on Au(111) surface, even in an extreme acid system (pH = 1). Acidic electrolyte (HClO₄) could protonate the surface of alkyl amine of a monolayer of the gold surface when potential shifts to negative. The quite stability of 1-dodecylamine on the gold surface maintained the monolayer across the potential window (0.1-0.8V). This transform model was confirmed by EC-STM. In addition, amine-modified Au(111) electrode adlayer used to examine how to affect an electron transfer across an interface using [Fe(CN)₆]³⁻/[Fe(CN)₆]⁴⁻ redox pair containing 0.1 M HClO₄ solution.Keywords: cyclic voltammetry, dodecylamine, gold (Au)(111), scanning tunneling microscopy, self-assembled monolayer, surface-enhanced infrared absorption spectroscopy
Procedia PDF Downloads 1882771 Scanning Electronic Microscopy for Analysis of the Effects of Surfactants on De-Wrinkling and Dispersion of Graphene
Authors: Kostandinos Katsamangas, Fawad Inam
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Graphene was dispersed using a tip sonicator and the effect of surfactants were analysed. Sodium Dodecyl Sulphate (SDS) and Polyvinyl Alcohol (PVA) were compared to observe whether or not they had any effect on any de-wrinkling, and secondly whether they aided to achieve better dispersions. There is a huge demand for wrinkle free graphene as this will greatly increase its usefulness in various engineering applications. A comprehensive literature on de-wrinkling graphene has been discussed. Low magnification Scanning Electronic Microscopy (SEM) was conducted to assess the quality of graphene de-wrinkling. The utilization of the PVA has a significant effect on de-wrinkling whereas SDS had minimal effect on the de-wrinkling of graphene.Keywords: Graphene, de-wrinkling, dispersion, surfactants, scanning electronic microscopy
Procedia PDF Downloads 4632770 Single Atom Manipulation with 4 Scanning Tunneling Microscope Technique
Authors: Jianshu Yang, Delphine Sordes, Marek Kolmer, Christian Joachim
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Nanoelectronics, for example the calculating circuits integrating at molecule scale logic gates, atomic scale circuits, has been constructed and investigated recently. A major challenge is their functional properties characterization because of the connecting problem from atomic scale to micrometer scale. New experimental instruments and new processes have been proposed therefore. To satisfy a precisely measurement at atomic scale and then connecting micrometer scale electrical integration controller, the technique improvement is kept on going. Our new machine, a low temperature high vacuum four scanning tunneling microscope, as a customer required instrument constructed by Omicron GmbH, is expected to be scaling down to atomic scale characterization. Here, we will present our first testified results about the performance of this new instrument. The sample we selected is Au(111) surface. The measurements have been taken at 4.2 K. The atomic resolution surface structure was observed with each of four scanners with noise level better than 3 pm. With a tip-sample distance calibration by I-z spectra, the sample conductance has been derived from its atomic locally I-V spectra. Furthermore, the surface conductance measurement has been performed using two methods, (1) by landing two STM tips on the surface with sample floating; and (2) by sample floating and one of the landed tips turned to be grounding. In addition, single atom manipulation has been achieved with a modified tip design, which is comparable to a conventional LT-STM.Keywords: low temperature ultra-high vacuum four scanning tunneling microscope, nanoelectronics, point contact, single atom manipulation, tunneling resistance
Procedia PDF Downloads 2732769 Scanning Electrochemical Microscopy Studies of Magnesium-Iron Galvanic Couple
Authors: Akram Alfantazi, Tirdad Nickchi
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Magnesium galvanic corrosion plays an important role in the commercialization of Mg alloys in the automobile industry. This study aims at visualizing the electrochemical activity of the magnesium surface being coupled with pure iron in sulfate-chloride solutions. Scanning electrochemical microscopy was used to monitor the chemical activity of the surface and the data was compared with the conventional corrosion results such as potentiodynamic polarization, linear polarization, and immersion tests. The SECM results showed that the chemical reactivity of Mg is higher than phosphate-permanganate-coated Mg. Regions in the vicinity of the galvanic couple boundary are very active in the magnesium phase and fully protected in the iron phase. Scanning electrochemical microscopy results showed that the conversion coating provided good corrosion resistance for magnesium in the short-term but fails at long-term testing.Keywords: corrosion, galvanic corrosion, magnesium, scanning electrochemical microscopy
Procedia PDF Downloads 2832768 Shield Tunnel Excavation Simulation of a Case Study Using a So-Called 'Stress Relaxation' Method
Authors: Shengwei Zhu, Alireza Afshani, Hirokazu Akagi
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Ground surface settlement induced by shield tunneling is addressing increasing attention as shield tunneling becomes a popular construction technique for tunnels in urban areas. This paper discusses a 2D longitudinal FEM simulation of a tunneling case study in Japan (Tokyo Metro Yurakucho Line). Tunneling-induced field data was already collected and is used here for comparison and evaluating purposes. In this model, earth pressure, face pressure, backfilling grouting, elastic tunnel lining, and Mohr-Coulomb failure criterion for soil elements are considered. A method called ‘stress relaxation’ is also exploited to simulate the gradual tunneling excavation. Ground surface settlements obtained from numerical results using the introduced method are then compared with the measurement data.Keywords: 2D longitudinal FEM model, tunneling case study, stress relaxation, shield tunneling excavation
Procedia PDF Downloads 3232767 Investigation of Resistive Switching in CsPbCl₃ / Cs₄PbCl₆ Core-Shell Nanocrystals Using Scanning Tunneling Spectroscopy: A Step Towards High Density Memory-based Applications
Authors: Arpan Bera, Rini Ganguly, Raja Chakraborty, Amlan J. Pal
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To deal with the increasing demands for the high-density non-volatile memory devices, we need nano-sites with efficient and stable charge storage capabilities. We prepared nanocrystals (NCs) of inorganic perovskite, CsPbCl₃ coated with Cs₄PbCl₆, by colloidal synthesis. Due to the type-I band alignment at the junction, this core-shell composite is expected to behave as a charge trapping site. Using Scanning Tunneling Spectroscopy (STS), we investigated voltage-controlled resistive switching in this heterostructure by tracking the change in its current-voltage (I-V) characteristics. By applying voltage pulse of appropriate magnitude on the NCs through this non-invasive method, different resistive states of this system were systematically accessed. For suitable pulse-magnitude, the response jumped to a branch with enhanced current indicating a high-resistance state (HRS) to low-resistance state (LRS) switching in the core-shell NCs. We could reverse this process by using a pulse of opposite polarity. These two distinct resistive states can be considered as two logic states, 0 and 1, which are accessible by varying voltage magnitude and polarity. STS being a local probe in space enabled us to capture this switching at individual NC site. Hence, we claim a bright prospect of these core-shell NCs made of inorganic halide perovskites in future high density memory application.Keywords: Core-shell perovskite, CsPbCl₃-Cs₄PbCl₆, resistive switching, Scanning Tunneling Spectroscopy
Procedia PDF Downloads 852766 New Analytical Current-Voltage Model for GaN-based Resonant Tunneling Diodes
Authors: Zhuang Guo
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In the field of GaN-based resonant tunneling diodes (RTDs) simulations, the traditional Tsu-Esaki formalism failed to predict the values of peak currents and peak voltages in the simulated current-voltage(J-V) characteristics. The main reason is that due to the strong internal polarization fields, two-dimensional electron gas(2DEG) accumulates at emitters, resulting in 2D-2D resonant tunneling currents, which become the dominant parts of the total J-V characteristics. By comparison, based on the 3D-2D resonant tunneling mechanism, the traditional Tsu-Esaki formalism cannot predict the J-V characteristics correctly. To overcome this shortcoming, we develop a new analytical model for the 2D-2D resonant tunneling currents generated in GaN-based RTDs. Compared with Tsu-Esaki formalism, the new model has made the following modifications: Firstly, considering the Heisenberg uncertainty, the new model corrects the expression of the density of states around the 2DEG eigenenergy levels at emitters so that it could predict the half width at half-maximum(HWHM) of resonant tunneling currents; Secondly, taking into account the effect of bias on wave vectors on the collectors, the new model modifies the expression of the transmission coefficients which could help to get the values of peak currents closer to the experiment data compared with Tsu-Esaki formalism. The new analytical model successfully predicts the J-V characteristics of GaN-based RTDs, and it also reveals more detailed mechanisms of resonant tunneling happened in GaN-based RTDs, which helps to design and fabricate high-performance GaN RTDs.Keywords: GaN-based resonant tunneling diodes, tsu-esaki formalism, 2D-2D resonant tunneling, heisenberg uncertainty
Procedia PDF Downloads 722765 Dielectric Behavior of 2D Layered Insulator Hexagonal Boron Nitride
Authors: Nikhil Jain, Yang Xu, Bin Yu
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Hexagonal boron nitride (h-BN) has been used as a substrate and gate dielectric for graphene field effect transistors (GFETs). Using a graphene/h-BN/TiN (channel/dielectric/gate) stack, key material properties of h-BN were investigated i.e. dielectric strength and tunneling behavior. Work function difference between graphene and TiN results in spontaneous p-doping of graphene through a multi-layer h-BN flake. However, at high levels of current stress, n-doping of graphene is observed, possibly due to the charge transfer across the thin h-BN multi layer. Neither Direct Tunneling (DT) nor Fowler-Nordheim Tunneling (FNT) was observed in TiN/h-BN/Au hetero structures with h-BN showing two distinct volatile conduction states before breakdown. Hexagonal boron nitride emerges as a material of choice for gate dielectrics in GFETs because of robust dielectric properties and high tunneling barrier.Keywords: graphene, transistors, conduction, hexagonal boron nitride, dielectric strength, tunneling
Procedia PDF Downloads 3552764 Risk Prioritization in Tunneling Construction Projects
Authors: David Nantes, George Gilbert
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There are a lot of risks that might crop up as a tunneling project develops, and it's crucial to be aware of them. Due to the unexpected nature of tunneling projects and the interconnectedness of risk occurrences, the risk assessment approach presents a significant challenge. The purpose of this study is to provide a hybrid FDEMATEL-ANP model to help prioritize risks during tunnel construction projects. The ambiguity in expert judgments and the relative severity of interdependencies across risk occurrences are both taken into consideration by this model, thanks to the Fuzzy Decision-Making Trial and Evaluation Laboratory (FDEMATEL). The Analytic Network Process (ANP) method is used to rank priorities and assess project risks. The authors provide a case study of a subway tunneling construction project to back up the validity of their methodology. The results showed that the proposed method successfully isolated key risk factors and elucidated their interplay in the case study. The proposed method has the potential to become a helpful resource for evaluating dangers associated with tunnel construction projects.Keywords: risk, prioritization, FDEMATEL, ANP, tunneling construction projects
Procedia PDF Downloads 822763 A Survey of Domain Name System Tunneling Attacks: Detection and Prevention
Authors: Lawrence Williams
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As the mechanism which converts domains to internet protocol (IP) addresses, Domain Name System (DNS) is an essential part of internet usage. It was not designed securely and can be subject to attacks. DNS attacks have become more frequent and sophisticated and the need for detecting and preventing them becomes more important for the modern network. DNS tunnelling attacks are one type of attack that are primarily used for distributed denial-of-service (DDoS) attacks and data exfiltration. Discussion of different techniques to detect and prevent DNS tunneling attacks is done. The methods, models, experiments, and data for each technique are discussed. A proposal about feasibility is made. Future research on these topics is proposed.Keywords: DNS, tunneling, exfiltration, botnet
Procedia PDF Downloads 692762 Tunneling Current Switching in the Coupled Quantum Dots by Means of External Field
Authors: Vladimir Mantsevich, Natalya Maslova, Petr Arseyev
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We investigated the tunneling current peculiarities in the system of two coupled by means of the external field quantum dots (QDs) weakly connected to the electrodes in the presence of Coulomb correlations between localized electrons by means of Heisenberg equations for pseudo operators with constraint. Special role of multi-electronic states was demonstrated. Various single-electron levels location relative to the sample Fermi level and to the applied bias value in symmetric tunneling contact were investigated. Rabi frequency tuning results in the single-electron energy levels spacing. We revealed the appearance of negative tunneling conductivity and demonstrated multiple switching "on" and "off" of the tunneling current depending on the Coulomb correlations value, Rabi frequency amplitude and energy levels spacing. We proved that Coulomb correlations strongly influence the system behavior. We demonstrated the presence of multi-stability in the coupled QDs with Coulomb correlations when single value of the tunneling current amplitude corresponds to the two values of Rabi frequency in the case when both single-electron energy levels are located slightly above eV and are close to each other. This effect disappears when the single-electron energy levels spacing increases.Keywords: Coulomb correlations, negative tunneling conductivity, quantum dots, rabi frequency
Procedia PDF Downloads 4452761 Bismuth Telluride Topological Insulator: Physical Vapor Transport vs Molecular Beam Epitaxy
Authors: Omar Concepcion, Osvaldo De Melo, Arturo Escobosa
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Topological insulator (TI) materials are insulating in the bulk and conducting in the surface. The unique electronic properties associated with these surface states make them strong candidates for exploring innovative quantum phenomena and as practical applications for quantum computing, spintronic and nanodevices. Many materials, including Bi₂Te₃, have been proposed as TIs and, in some cases, it has been demonstrated experimentally by angle-resolved photoemission spectroscopy (ARPES), scanning tunneling spectroscopy (STM) and/or magnetotransport measurements. A clean surface is necessary in order to make any of this measurements. Several techniques have been used to produce films and different kinds of nanostructures. Growth and characterization in situ is usually the best option although cleaving the films can be an alternative to have a suitable surface. In the present work, we report a comparison of Bi₂Te₃ grown by physical vapor transport (PVT) and molecular beam epitaxy (MBE). The samples were characterized by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Atomic force microscopy (AFM), X-ray photoelectron spectroscopy (XPS) and ARPES. The Bi₂Te₃ samples grown by PVT, were cleaved in the ultra-high vacuum in order to obtain a surface free of contaminants. In both cases, the XRD shows a c-axis orientation and the pole diagrams proved the epitaxial relationship between film and substrate. The ARPES image shows the linear dispersion characteristic of the surface states of the TI materials. The samples grown by PVT, a relatively simple and cost-effective technique shows the same high quality and TI properties than the grown by MBE.Keywords: Bismuth telluride, molecular beam epitaxy, physical vapor transport, topological insulator
Procedia PDF Downloads 1872760 Nano-Sensors: Search for New Features
Authors: I. Filikhin, B. Vlahovic
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We focus on a novel type of detection based on electron tunneling properties of double nanoscale structures in semiconductor materials. Semiconductor heterostructures as quantum wells (QWs), quantum dots (QDs), and quantum rings (QRs) may have energy level structure of several hundred of electron confinement states. The single electron spectra of the double quantum objects (DQW, DQD, and DQR) were studied in our previous works with relation to the electron localization and tunneling between the objects. The wave function of electron may be localized in one of the QDs or be delocalized when it is spread over the whole system. The localizing-delocalizing tunneling occurs when an electron transition between both states is possible. The tunneling properties of spectra differ strongly for “regular” and “chaotic” systems. We have shown that a small violation of the geometry drastically affects localization of electron. In particular, such violations lead to the elimination of the delocalized states of the system. The same symmetry violation effect happens if electrical or magnetic fields are applied. These phenomena could be used to propose a new type of detection based on the high sensitivity of charge transport between double nanostructures and small violations of the shapes. It may have significant technological implications.Keywords: double quantum dots, single electron levels, tunneling, electron localizations
Procedia PDF Downloads 4992759 Microanalysis of a New Cementitious System Containing High Calcium Fly Ash and Waste Material by Scanning Electron Microscopy (SEM)
Authors: Anmar Dulaimi, Hassan Al Nageim, Felicite Ruddock, Linda Seton
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Fast-curing cold bituminous emulsion mixture (CBEM) including active filler from high calcium fly ash (HCFA) and waste material (LJMU-A2) has been developed in this study. This will overcome the difficulties related with the use of hot mix asphalt such as greenhouse gases emissions and problems in keeping the temperature when transporting long distance. The aim of this study is to employ petrographic examinations using scanning electron microscopy (SEM) for characterizing the hydrates microstructure, in a new binary blended cement filler (BBCF) system. The new BBCF has been used as a replacement to traditional mineral filler in cold bituminous emulsion mixtures (CBEMs), comprises supplementary cementitious materials containing high calcium fly ash (HCFA) and a waste material (LJMU-A2). SEM analysis demonstrated the formation of hydrates after varying curing ages within the BBCF. The accelerated activation of HCFA by LJMU-A2 within the BBCF was revealed and as a consequence early and later stiffness was developed in novel CBEM.Keywords: cold bituminous emulsion mixtures, indirect tensile stiffness modulus, scanning electron microscopy (SEM), and high calcium fly ash
Procedia PDF Downloads 2682758 Mesoporous Material Nanofibers by Electrospinning
Authors: Sh. Sohrabnezhad, A. Jafarzadeh
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In this paper, MCM-41 mesoporous material nanofibers were synthesized by an electrospinning technique. The nanofibers were characterized by scanning electron microscopy (SEM), transmission electron microscopy (TEM), x-ray diffraction (XRD), and nitrogen adsorption–desorption measurement. Tetraethyl orthosilicate (TEOS) and polyvinyl alcohol (PVA) were used as a silica source and fiber forming source, respectively. TEM and SEM images showed synthesis of MCM-41 nanofibers with a diameter of 200 nm. The pore diameter and surface area of calcined MCM-41 nanofibers was 2.2 nm and 970 m2/g, respectively. The morphology of the MCM-41 nanofibers depended on spinning voltages.Keywords: electrospinning, electron microscopy, fiber technology, porous materials, X-ray techniques
Procedia PDF Downloads 2432757 Morphology and Mineralogy of Acid Treated Soil
Authors: P. Hari Prasad Reddy, C. H. Rama Vara Prasad, G. Kalyan Kumar
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This paper presents the morphological and mineralogical changes occurring in the soil due to immediate and prolonged interaction with different concentrations of phosphoric acid and sulphuric acid. In order to assess the effect of acid contamination, a series of sediment volume, scanning electron microscopy and X-ray diffraction analysis tests were carried out on soil samples were exposed to different concentrations (1N, 4N and 8N) of phosphoric and sulphuric acid. Experimental results show that both acids showed severe morphological and mineralogical changes with synthesis of neogenic formations mainly at higher concentrations (4N and 8N) and at prolonged duration of interaction (28 and 80 days).Keywords: phosphoric acid, scanning electron microscopy, sulphuric acid, x-ray diffraction analysis
Procedia PDF Downloads 4202756 Carbon Nitride Growth on ZnO Architectures for Enhanced Photoelectrochemical Water Splitting Application
Authors: Špela Hajduk, Sean P. Berglund, Matejka Podlogar, Goran Dražić, Fatwa F. Abdi, Zorica C. Orel, Menny Shalom
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Graphitic carbon nitride materials (g-CN) have emerged as an attractive photocatalyst and electrocatalyst for photo and electrochemical water splitting reaction, due to their environmental benignity nature and suitable band gap. Many approaches were introduced to enhance the photoactivity and electronic properties of g-CN and resulted in significant changes in the electronic and catalytic properties. Here we demonstrate the synthesis of thin and homogenous g-CN layer on highly ordered ZnO nanowire (NW) substrate by growing a seeding layer of small supramolecular assemblies on the nanowires. The new synthetic approach leads to the formation of thin g-CN layer (~3 nm) without blocking all structure. Two different deposition methods of carbon nitride were investigated and will be presented. The amount of loaded carbon nitride significantly influences the PEC activity of hybrid material and all the ZnO/g-CNx electrodes show great improvement in photoactivity. The chemical structure, morphology and optical properties of the deposited g-CN were fully characterized by various techniques as X-ray powder spectroscopy (XRD), scanning electron microscopy (SEM), focused ion beam scanning electron microscopy (FIB-SEM), high-resolution scanning microscopy (HR-TEM) and X-ray photoelectron spectroscopy (XPS).Keywords: carbon nitride, photoanode, solar water splitting, zinc oxide
Procedia PDF Downloads 1862755 Morphology Analysis of Apple-Carrot Juice Treated by Manothermosonication (MTS) and High Temperature Short Time (HTST) Processes
Authors: Ozan Kahraman, Hao Feng
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Manothermosonication (MTS), which consists of the simultaneous application of heat and ultrasound under moderate pressure (100-700 kPa), is one of the technologies which destroy microorganisms and inactivates enzymes. Transmission electron microscopy (TEM) is a microscopy technique in which a beam of electrons is transmitted through an ultra-thin specimen, interacting with the specimen as it passes through it. The environmental scanning electron microscope or ESEM is a scanning electron microscope (SEM) that allows for the option of collecting electron micrographs of specimens that are "wet," uncoated. These microscopy techniques allow us to observe the processing effects on the samples. This study was conducted to investigate the effects of MTS and HTST treatments on the morphology of apple-carrot juices by using TEM and ESEM microscopy. Apple-carrot juices treated with HTST (72 0C, 15 s), MTS 50 °C (60 s, 200 kPa), and MTS 60 °C (30 s, 200 kPa) were observed in both ESEM and TEM microscopy. For TEM analysis, a drop of the solution dispersed in fixative solution was put onto a Parafilm ® sheet. The copper coated side of the TEM sample holder grid was gently laid on top of the droplet and incubated for 15 min. A drop of a 7% uranyl acetate solution was added and held for 2 min. The grid was then removed from the droplet and allowed to dry at room temperature and presented into the TEM. For ESEM analysis, a critical point drying of the filters was performed using a critical point dryer (CPD) (Samdri PVT- 3D, Tousimis Research Corp., Rockville, MD, USA). After the CPD, each filter was mounted onto a stub and coated with gold/palladium with a sputter coater (Desk II TSC Denton Vacuum, Moorestown, NJ, USA). E.Coli O157:H7 cells on the filters were observed with an ESEM (Philips XL30 ESEM-FEG, FEI Co., Eindhoven, The Netherland). ESEM (Environmental Scanning Electron Microscopy) and TEM (Transmission Electron Microscopy) images showed extensive damage for the samples treated with MTS at 50 and 60 °C such as ruptured cells and breakage on cell membranes. The damage was increasing with increasing exposure time.Keywords: MTS, HTST, ESEM, TEM, E.COLI O157:H7
Procedia PDF Downloads 2762754 Multiple Negative-Differential Resistance Regions Based on AlN/GaN Resonant Tunneling Structures by the Vertical Growth of Molecular Beam Epitaxy
Authors: Yao Jiajia, Wu Guanlin, LIU Fang, Xue Junshuai, Zhang Jincheng, Hao Yue
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Resonant tunneling diodes (RTDs) based on GaN have been extensively studied. However, no results of multiple logic states achieved by RTDs were reported by the methods of epitaxy in the GaN materials. In this paper, the multiple negative-differential resistance regions by combining two discrete double-barrier RTDs in series have been first demonstrated. Plasma-assisted molecular beam epitaxy (PA-MBE) was used to grow structures consisting of two vertical RTDs. The substrate was a GaN-on-sapphire template. Each resonant tunneling structure was composed of a double barrier of AlN and a single well of GaN with undoped 4-nm space layers of GaN on each side. The AlN barriers were 1.5 nm thick, and the GaN well was 2 nm thick. The resonant tunneling structures were separated from each other by 30-nm thick n+ GaN layers. The bottom and top layers of the structures, grown neighboring to the spacer layers that consist of 200-nm-thick n+ GaN. These devices with two tunneling structures exhibited uniform peaks and valleys current and also had two negative differential resistance NDR regions equally spaced in bias voltage. The current-voltage (I-V) characteristics of resonant tunneling structures with diameters of 1 and 2 μm were analyzed in this study. These structures exhibit three stable operating points, which are investigated in detail. This research demonstrates that using molecular beam epitaxy MBE to vertically grow multiple resonant tunneling structures is a promising method for achieving multiple negative differential resistance regions and stable logic states. These findings have significant implications for the development of digital circuits capable of multi-value logic, which can be achieved with a small number of devices.Keywords: GaN, AlN, RTDs, MBE, logic state
Procedia PDF Downloads 822753 Antibody-Conjugated Nontoxic Arginine-Doped Fe3O4 Nanoparticles for Magnetic Circulating Tumor Cells Separation
Authors: F. Kashanian, M. M. Masoudi, A. Akbari, A. Shamloo, M. R. Zand, S. S. Salehi
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Nano-sized materials present new opportunities in biology and medicine and they are used as biomedical tools for investigation, separation of molecules and cells. To achieve more effective cancer therapy, it is essential to select cancer cells exactly. This research suggests that using the antibody-functionalized nontoxic Arginine-doped magnetic nanoparticles (A-MNPs), has been prosperous in detection, capture, and magnetic separation of circulating tumor cells (CTCs) in tumor tissue. In this study, A-MNPs were synthesized via a simple precipitation reaction and directly immobilized Ep-CAM EBA-1 antibodies over superparamagnetic A-MNPs for Mucin BCA-225 in breast cancer cell. The samples were characterized by vibrating sample magnetometer (VSM), FT-IR spectroscopy, Tunneling Electron Microscopy (TEM) and Scanning Electron Microscopy (SEM). These antibody-functionalized nontoxic A-MNPs were used to capture breast cancer cell. Through employing a strong permanent magnet, the magnetic separation was achieved within a few seconds. Antibody-Conjugated nontoxic Arginine-doped Fe3O4 nanoparticles have the potential for the future study to capture CTCs which are released from tumor tissue and for drug delivery, and these results demonstrate that the antibody-conjugated A-MNPs can be used in magnetic hyperthermia techniques for cancer treatment.Keywords: tumor tissue, antibody, magnetic nanoparticle, CTCs capturing
Procedia PDF Downloads 3562752 Evaluation of the Mechanical and Microstructural Properties of Sustainable Concrete Exposed to Acid Solution
Authors: Adil Tamimi
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Limestone powder is a natural material that is available in many parts of the world. In this research self-compacting concrete was designed and prepared using limestone powder. The resulted concrete was exposed to the hydrochloric acid solution and compared with reference concrete. Mechanical properties of both fresh and hardened concrete have been evaluated. Scanning Electron Microscopy “SEM” has been unitized to analyse the morphological development of the hydration products. In sulphuric acid solution, a large formation of gypsum was detected in both samples of self-compacting concrete and conventional concrete. The Higher amount of thaumasite and ettringite was also detected in the SCC sample. In hydrochloric acid solution, monochloroaluminate was detected.Keywords: self-compacting concrete, mechanical properties, Scanning Electron Microscopy, acid solution
Procedia PDF Downloads 5032751 Two-Dimensional Material-Based Negative Differential Resistance Device with High Peak-to- Valley Current Ratio for Multi-Valued Logic Circuits
Authors: Kwan-Ho Kim, Jin-Hong Park
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The multi-valued logic (MVL) circuits, which can handle more than two logic states, are one of the promising solutions to overcome the bit density limitations of conventional binary logic systems. Recently, tunneling devices such as Esaki diode and resonant tunneling diode (RTD) have been extensively explored to construct the MVL circuits. These tunneling devices present a negative differential resistance (NDR) phenomenon in which a current decreases as a voltage increases in a specific applied voltage region. Due to this non-monotonic current behavior, the tunneling devices have more than two threshold voltages, consequently enabling construction of MVL circuits. Recently, the emergence of two dimensional (2D) van der Waals (vdW) crystals has opened up the possibility to fabricate such tunneling devices easily. Owing to the defect-free surface of the 2D crystals, a very abrupt junction interface could be formed through a simple stacking process, which subsequently allowed the implementation of a high-performance tunneling device. Here, we report a vdW heterostructure based tunneling device with multiple threshold voltages, which was fabricated with black phosphorus (BP) and hafnium diselenide (HfSe₂). First, we exfoliated BP on the SiO₂ substrate and then transferred HfSe₂ on BP using dry transfer method. The BP and HfSe₂ form type-Ⅲ heterojunction so that the highly doped n+/p+ interface can be easily implemented without additional electrical or chemical doping process. Owing to high natural doping at the junction, record high peak to valley ratio (PVCR) of 16 was observed to the best our knowledge in 2D materials based NDR device. Furthermore, based on this, we first demonstrate the feasibility of the ternary latch by connecting two multi-threshold voltage devices in series.Keywords: two dimensional van der Waals crystal, multi-valued logic, negative differential resistnace, tunneling device
Procedia PDF Downloads 2072750 Morphological Characterization and Gas Permeation of Commercially Available Alumina Membrane
Authors: Ifeyinwa Orakwe, Ngozi Nwogu, Edward Gobina
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This work presents experimental results relating to the structural characterization of a commercially available alumina membrane. A γ-alumina mesoporous tubular membrane has been used. Nitrogen adsorption-desorption, scanning electron microscopy and gas permeability test has been carried out on the alumina membrane to characterize its structural features. Scanning electron microscopy (SEM) was used to determine the pore size distribution of the membrane. Pore size, specific surface area and pore size distribution were also determined with the use of the Nitrogen adsorption-desorption instrument. Gas permeation tests were carried out on the membrane using a variety of single and mixed gases. The permeabilities at different pressure between 0.05-1 bar and temperature range of 25-200oC were used for the single and mixed gases: nitrogen (N2), helium (He), oxygen (O2), carbon dioxide (CO2), 14%CO₂/N₂, 60%CO₂/N₂, 30%CO₂/CH4 and 21%O₂/N₂. Plots of flow rate verses pressure were obtained. Results got showed the effect of temperature on the permeation rate of the various gases. At 0.5 bar for example, the flow rate for N2 was relatively constant before decreasing with an increase in temperature, while for O2, it continuously decreased with an increase in temperature. In the case of 30%CO₂/CH4 and 14%CO₂/N₂, the flow rate showed an increase then a decrease with increase in temperature. The effect of temperature on the membrane performance of the various gases is presented and the influence of the trans membrane pressure drop will be discussed in this paper.Keywords: alumina membrane, Nitrogen adsorption-desorption, scanning electron microscopy, gas permeation, temperature
Procedia PDF Downloads 3172749 Replacing MOSFETs with Single Electron Transistors (SET) to Reduce Power Consumption of an Inverter Circuit
Authors: Ahmed Shariful Alam, Abu Hena M. Mustafa Kamal, M. Abdul Rahman, M. Nasmus Sakib Khan Shabbir, Atiqul Islam
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According to the rules of quantum mechanics there is a non-vanishing probability of for an electron to tunnel through a thin insulating barrier or a thin capacitor which is not possible according to the laws of classical physics. Tunneling of electron through a thin insulating barrier or tunnel junction is a random event and the magnitude of current flowing due to the tunneling of electron is very low. As the current flowing through a Single Electron Transistor (SET) is the result of electron tunneling through tunnel junctions of its source and drain the supply voltage requirement is also very low. As a result, the power consumption across a Single Electron Transistor is ultra-low in comparison to that of a MOSFET. In this paper simulations have been done with PSPICE for an inverter built with both SETs and MOSFETs. 35mV supply voltage was used for a SET built inverter circuit and the supply voltage used for a CMOS inverter was 3.5V.Keywords: ITRS, enhancement type MOSFET, island, DC analysis, transient analysis, power consumption, background charge co-tunneling
Procedia PDF Downloads 5192748 Solution Growth of Titanium Nitride Nanowires for Implantation Application
Authors: Roaa Sait, Richard Cross
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The synthesis and characterization of one dimensional nanostructure such as nanowires has received considerable attention. Much effort has concentrated on TiN material especially in the biological field due to its useful and unique properties in this field. Therefore, for the purpose of this project, synthesis of Titanium Nitride (TiN) nanowires (NWs) will be presented. They will be synthesised by growing titanium dioxide (Ti) NWs in an aqueous solution at low temperatures under atmospheric pressure. Then the grown nanowires will undergo a 'Nitrodation process' in which results in the formation of TiN NWs. The structure, morphology and composition of the grown nanowires will be characterized using Scanning Electron Microscopy (SEM), Transmission Electron Microscopy (TEM), X-ray Diffraction (XRD) and Cyclic Voltammetry (CV). Obtaining TiN NWs is a challenging task since it has not been formulated before, as far as we acknowledge. This might be due to the fact that nitriding Ti NWs can be difficult in terms of optimizing experimental parameters.Keywords: nanowires, dissolution-growth, nucleation, PECVD, deposition, spin coating, scanning electron microscopic analysis, cyclic voltammetry analysis
Procedia PDF Downloads 3532747 Sewer Culvert Installation Method to Accommodate Underground Construction in an Urban Area with Narrow Streets
Authors: Osamu Igawa, Hiroshi Kouchiwa, Yuji Ito
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In recent years, a reconstruction project for sewer pipelines has been progressing in Japan with the aim of renewing old sewer culverts. However, it is difficult to secure a sufficient base area for shafts in an urban area because many streets are narrow with a complex layout. As a result, construction in such urban areas is generally very demanding. In urban areas, there is a strong requirement for a safe, reliable and economical construction method that does not disturb the public’s daily life and urban activities. With this in mind, we developed a new construction method called the 'shield switching type micro-tunneling method' which integrates the micro-tunneling method and shield method. In this method, pipeline is constructed first for sections that are gently curved or straight using the economical micro-tunneling method, and then the method is switched to the shield method for sections with a sharp curve or a series of curves without establishing an intermediate shaft. This paper provides the information, features and construction examples of this newly developed method.Keywords: micro-tunneling method, secondary lining applied RC segment, sharp curve, shield method, switching type
Procedia PDF Downloads 3952746 Double Negative Differential Resistance Features in GaN-Based Bipolar Resonance Tunneling Diodes
Authors: Renjie Liu, Junshuai Xue, Jiajia Yao, Guanlin Wu, Zumao L, Xueyan Yang, Fang Liu, Zhuang Guo
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Here, we report the study of the performance of AlN/GaN bipolar resonance tunneling diodes (BRTDs) using numerical simulations. The I-V characteristics of BRTDs show double negative differential resistance regions, which exhibit similar peak current density and peak-to-valley current ratio (PVCR). Investigations show that the PVCR can approach 4.6 for the first and 5.75 for the second negative resistance region. The appearance of the two negative differential resistance regions is realized by changing the collector material of conventional GaN RTD to P-doped GaN. As the bias increases, holes in the P-region and electrons in the N-region undergo resonant tunneling, respectively, resulting in two negative resistance regions. The appearance of two negative resistance regions benefits from the high AlN barrier and the precise regulation of the potential well thickness. This result shows the promise of GaN BRTDs in the development of multi-valued logic circuits.Keywords: GaN bipolar resonant tunneling diode, double negative differential resistance regions, peak to valley current ratio, multi-valued logic
Procedia PDF Downloads 1532745 Some Issues with Extension of an HPC Cluster
Authors: Pil Seong Park
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Homemade HPC clusters are widely used in many small labs, because they are easy to build and cost-effective. Even though incremental growth is an advantage of clusters, it results in heterogeneous systems anyhow. Instead of adding new nodes to the cluster, we can extend clusters to include some other Internet servers working independently on the same LAN, so that we can make use of their idle times, especially during the night. However extension across a firewall raises some security problems with NFS. In this paper, we propose a method to solve such a problem using SSH tunneling, and suggest a modified structure of the cluster that implements it.Keywords: extension of HPC clusters, security, NFS, SSH tunneling
Procedia PDF Downloads 4222744 Mechanism of Sinkhole Development on Water-Bearing Soft Ground Tunneling
Authors: H. J. Kim, K. H. Kim, N. H. Park, K. T. Nam, Y. H. Jung, T. H. Kim, J. H. Shin
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Underground excavations in an urban area can cause various geotechnical problems such as ground loss and lowering of groundwater level. When the ground loss becomes uncontrollably large, sinkholes can be developed to the ground surface. A sinkhole is commonly known as the natural phenomenon associated with lime rock areas. However, sinkholes in urban areas due to pressurized sewers and/or tunneling are also frequently reported. In this study, mechanism of a sinkhole developed at the site ‘A’ where a tunneling work underwent is investigated. The sinkhole occurred in the sand strata with the high level of groundwater when excavating a tunnel of which diameter is 3.6 m. The sinkhole was progressed in two steps. The first step began with the local failure around the tunnel face followed by tons of groundwater inflow, and the second step was triggered by the TBM (Tunnel Boring Machine) chamber opening which led to the progressive general failure. The possibility of the sinkhole was evaluated by using Limit Equilibrium Method (LEM), and critical height was evaluated by the empirical stability chart. It is found that the lowering of the face pressure and inflow of groundwater into the tunnel face turned to be the main reason for the sinkhole.Keywords: limit equilibrium method, sinkhole, stability chart, tunneling
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