Search results for: Mach Zehnder bias voltage

Authors: You-Lin Wu, Yi-Hsing Sung, Shih-Hung Lin, Jing-Jenn Lin

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Performance improvement in optoelectronic devices such as solar cells and photodetectors has been reported when a polymer/ZnO nanorods stack is used. Resistance switching of polymer/ZnO nanocrystals (or nanorods) hybrid has also gained a lot of research interests recently. It has been reported that high- and low-resistance states of a metal/insulator/metal (MIM) structure diode with a polystyrene (PS) and ZnO hybrid as the insulator layer can be switched by applied bias after a high-voltage forming process, while the same device structure merely with a PS layer does not show any forming behavior. In this work, we investigated the current-voltage (I-V) characteristics of an MIM device with a PS/ZnO nanorods stack deposited on fluorine-doped tin oxide (FTO) glass substrate. The ZnO nanorods were grown by a hydrothermal method using a mixture of zinc nitrate, hexamethylenetetramine, and DI water. Following that, a PS layer was deposited by spin coating. Finally, the device with a structure of Ti/ PS/ZnO nanorods/FTO was completed by e-gun evaporated Ti layer on top of the PS layer. Semiconductor parameters analyzer Agilent 4156C was then used to measure the I-V characteristics of the device by applying linear ramp sweep voltage with sweep sequence of 0V → 4V → 0V → 3V → 0V → 2V → 0V → 1V → 0V in both positive and negative directions. It is interesting to find that the I-V characteristics are bias dependent and hysteretic, indicating that the device Ti/PS/ZnO nanorods/FTO structure has ferroelectricity. Our results also show that the maximum hysteresis loop height of the I-V characteristics as well as the voltage at which the maximum hysteresis loop height of each scan occurs increase with increasing maximum sweep voltage. It should be noticed that, although ferroelectricity has been found in ZnO at its melting temperature (1975℃) and in Li- or Co-doped ZnO, neither PS nor ZnO has ferroelectricity at room temperature. Using the same structure but with a PS or ZnO layer only as the insulator does not give and hysteretic I-V characteristics. It is believed that a charge polarization layer is induced near the PS/ZnO nanorods stack interface and thus causes the ferroelectricity in the device with Ti/PS/ZnO nanorods/FTO structure. Our results show that the PS/ZnO stack can find a potential application in a resistive switching memory device with MIM structure.

Keywords: ferroelectricity, hysteresis, polystyrene, resistance switching, ZnO nanorods

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Authors: Hyun Young Kim, Chung Kwang Lee, Han Hee Cho, Sang Woon Cho, Yong Seo Koo

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In this paper, we proposed a novel SCR (Silicon Controlled Rectifier) - based ESD (Electrostatic Discharge) protection device for I/O and power clamp. The proposed device has a higher holding voltage characteristic than conventional SCR. These characteristics enable to have latch-up immunity under normal operating conditions as well as superior full chip ESD protection. The proposed device was analyzed to figure out electrical characteristics and tolerance robustness in term of individual design parameters (D1, D2, D3). They are investigated by using the Synopsys TCAD simulator. As a result of simulation, holding voltage increased with different design parameters. The holding voltage of the proposed device changes from 3.3V to 7.9V. Also, N-Stack structure ESD device with the high holding voltage is proposed. In the simulation results, 2-stack has holding voltage of 6.8V and 3-stack has holding voltage of 10.5V. The simulation results show that holding voltage of stacking structure can be larger than the operation voltage of high-voltage application.

Keywords: ESD, SCR, holding voltage, stack, power clamp

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Authors: A.G. S. Aldajani, N. Smida, M. G. Althobaiti, B. Zaidi

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In order to exploit the good electrical properties of anthracene and the excellent properties of fluorescein, new hybrid material has been synthesized (An-Fl). Current-voltage measurements were done on a new single-layer ITO/An-FL/Al device of typically 100 nm thickness. Atypical diode behavior is observed with a turn-on voltage of 4.4 V, a dynamic resistance of 74.07 KΩ and a rectification ratio of 2.02 due to unbalanced transport. Results show also that the current-voltage characteristics present three different regimes of the power-law (J~Vᵐ) for which the conduction mechanism is well described with space-charge-limited current conduction mechanism (SCLC) with a charge carrier mobility of 2.38.10⁻⁵cm2V⁻¹S⁻¹. Moreover, the electrical transport properties of this device have been carried out using a dependent frequency study in the range (50 Hz–1.4 MHz) for different applied biases (from 0 to 6 V). At lower frequency, the σdc values increase with bias voltage rising, supporting that the mobile ion can hop successfully to its nearest vacant site. From σac and impedance measurements, the equivalent electrical circuit is evidenced, where the conductivity process is coherent with an exponential trap distribution caused by structural defects and/or chemical impurities.

Keywords: semiconducting polymer, conductivity, SCLC, impedance spectroscopy

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Authors: Yong Seo Koo, Jong Ho Nam, Yong Nam Choi, Dae Yeol Yoo, Jung Woo Han

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This paper presents a silicon controller rectifier (SCR) based ESD protection circuit for IC. The proposed ESD protection circuit has low trigger voltage and high holding voltage compared with conventional SCR ESD protection circuit. Electrical characteristics of the proposed ESD protection circuit are simulated and analyzed using TCAD simulator. The proposed ESD protection circuit verified effective low voltage ESD characteristics with low trigger voltage and high holding voltage.

Keywords: electro-static discharge (ESD), silicon controlled rectifier (SCR), holding voltage, protection circuit

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Authors: Varun Kumar, Chandra Shakher

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Micro-optical components such as microlenses and microlens array have numerous engineering and industrial applications for collimation of laser diodes, imaging devices for sensor system (CCD/CMOS, document copier machines etc.), for making beam homogeneous for high power lasers, a critical component in Shack-Hartmann sensor, fiber optic coupling and optical switching in communication technology. Also micro-optical components have become an alternative for applications where miniaturization, reduction of alignment and packaging cost are necessary. The compliance with high-quality standards in the manufacturing of micro-optical components is a precondition to be compatible on worldwide markets. Therefore, high demands are put on quality assurance. For quality assurance of these lenses, an economical measurement technique is needed. For cost and time reason, technique should be fast, simple (for production reason), and robust with high resolution. The technique should provide non contact, non-invasive and full field information about the shape of micro- optical component under test. The interferometric techniques are noncontact type and non invasive and provide full field information about the shape of the optical components. The conventional interferometric technique such as holographic interferometry or Mach-Zehnder interferometry is available for characterization of micro-lenses. However, these techniques need more experimental efforts and are also time consuming. Digital holography (DH) overcomes the above described problems. Digital holographic microscopy (DHM) allows one to extract both the amplitude and phase information of a wavefront transmitted through the transparent object (microlens or microlens array) from a single recorded digital hologram by using numerical methods. Also one can reconstruct the complex object wavefront at different depths due to numerical reconstruction. Digital holography provides axial resolution in nanometer range while lateral resolution is limited by diffraction and the size of the sensor. In this paper, Mach-Zehnder based digital holographic interferometric microscope (DHIM) system is used for the testing of transparent microlenses. The advantage of using the DHIM is that the distortions due to aberrations in the optical system are avoided by the interferometric comparison of reconstructed phase with and without the object (microlens array). In the experiment, first a digital hologram is recorded in the absence of sample (microlens array) as a reference hologram. Second hologram is recorded in the presence of microlens array. The presence of transparent microlens array will induce a phase change in the transmitted laser light. Complex amplitude of object wavefront in presence and absence of microlens array is reconstructed by using Fresnel reconstruction method. From the reconstructed complex amplitude, one can evaluate the phase of object wave in presence and absence of microlens array. Phase difference between the two states of object wave will provide the information about the optical path length change due to the shape of the microlens. By the knowledge of the value of the refractive index of microlens array material and air, the surface profile of microlens array is evaluated. The Sag of microlens and radius of curvature of microlens are evaluated and reported. The sag of microlens agrees well within the experimental limit as provided in the specification by the manufacturer.

Keywords: micro-optics, microlens array, phase map, digital holographic interferometric microscopy

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Authors: Kyoung-il Do, Byung-seok Lee, Hee-guk Chae, Jeong-yun Seo Yong-seo Koo

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In this paper, a Silicon Controlled Rectifier (SCR)-based Electrostatic Discharge (ESD) protection circuit with high holding voltage and high robustness characteristics is proposed. Unlike conventional SCR, the proposed circuit has low trigger voltage and high holding voltage and provides effective ESD protection with latch-up immunity. In addition, the TCAD simulation results show that the proposed circuit has better electrical characteristics than the conventional SCR. A stack technology was used for voltage-specific applications. Consequentially, the proposed circuit has a trigger voltage of 17.60 V and a holding voltage of 3.64 V.

Keywords: ESD, SCR, latch-up, power clamp, holding voltage

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Authors: Sun-Ki Hong, Yong-Ho Cho, Ki-Seok Kim, Tae-Sam Kang

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Piezoelectric actuator is treated as RC load when it is modeled electrically. For some piezoelectric actuator applications, arbitrary voltage is required to actuate. Especially for unidirectional arbitrary voltage driving like as sine wave, some special inverter with circuit that can charge and discharge the capacitive energy can be used. In this case, the difference between power supply level and the object voltage level for RC load is varied. Because the control gain is constant, the controlled output is not uniform according to the voltage difference. In this paper, for charge and discharge circuit for unidirectional arbitrary voltage driving for piezoelectric actuator, the controller gain is controlled according to the voltage difference. With the proposed simple idea, the load voltage can have controlled smoothly although the voltage difference is varied. The appropriateness is proved from the simulation of the proposed circuit.

Keywords: analog voltage inverter, capacitive load, gain control, dc-dc converter, piezoelectric, voltage waveform

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Authors: H. H. Goh, Q. S. Chua, S. W. Lee, B. C. Kok, K. C. Goh, K. T. K. Teo

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At present, the evaluation of voltage stability assessment experiences sizeable anxiety in the safe operation of power systems. This is due to the complications of a strain power system. With the snowballing of power demand by the consumers and also the restricted amount of power sources, therefore, the system has to perform at its maximum proficiency. Consequently, the noteworthy to discover the maximum ability boundary prior to voltage collapse should be undertaken. A preliminary warning can be perceived to evade the interruption of power system’s capacity. The effectiveness of line voltage stability indices (LVSI) is differentiated in this paper. The main purpose of the indices is used to predict the proximity of voltage instability of the electric power system. On the other hand, the indices are also able to decide the weakest load buses which are close to voltage collapse in the power system. The line stability indices are assessed using the IEEE 14 bus test system to validate its practicability. Results demonstrated that the implemented indices are practically relevant in predicting the manifestation of voltage collapse in the system. Therefore, essential actions can be taken to dodge the incident from arising.

Keywords: critical line, line outage, line voltage stability indices (LVSI), maximum loadability, voltage collapse, voltage instability, voltage stability analysis

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Authors: Kang Hyun Yi

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This paper presents a new parallel output LLC DC/DC converter for electric vehicle. The electric vehicle has two batteries. One is a high voltage battery for the powertrain of the vehicle and the other is a low voltage battery for the vehicle electric system. The low voltage is charged from the high voltage battery and the high voltage input and the high current output DC/DC converter is needed. Therefore, the new LLC converter with the input voltage compensation is proposed for the high voltage input and the low voltage output DC/DC converter. The proposed circuit has two LLC converters with the series input voltage from the battery for the powertrain and the parallel output low battery voltage for the vehicle electric system because the battery voltage for the powertrain and the electric power for the vehicle become high. Also, the input series voltage compensation capacitor is used for balancing the input current in the two LLC converters. The proposed converter has an equal electric stress of the semiconductor parts and the reactive components, high efficiency and good heat dissipation.

Keywords: electric vehicle, LLC DC/DC converter, input voltage balancing, parallel output

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Authors: Vincent King Soon Wong, Hong Seng Ng, Florinna Sim

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Negative Bias Temperature Instability (NBTI) is one of the critical degradation mechanisms in semiconductor device reliability that causes shift in the threshold voltage (Vth). However, thorough understanding of this reliability failure mechanism is still unachievable due to a recovery characteristic known as NBTI recovery. This paper will demonstrate the severity of NBTI recovery as well as one of the effective methods used to mitigate, which is the minimization of measurement system delays. Comparison was done in between two measurement systems that have significant differences in measurement delays to show how NBTI recovery causes result deviations and how fast measurement systems can mitigate NBTI recovery. Another method to minimize NBTI recovery without the influence of measurement system known as Fast Wafer Level Reliability (FWLR) NBTI was also done to be used as reference.

Keywords: fast vs slow BTI, fast wafer level reliability (FWLR), negative bias temperature instability (NBTI), NBTI measurement system, metal-oxide-semiconductor field-effect transistor (MOSFET), NBTI recovery, reliability

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Authors: Birinderjit Singh Kalyan, Inderpreet Kaur, Balwinder Singh Sohi

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In this paper, an equivalent model for floating gate transistor has been proposed. Using the floating gate voltage value, capacitive coupling coefficients has been found at different bias conditions. The amount of charge present on the gate has been then calculated using the transient models of hot electron programming and Fowler-Nordheim Tunnelling. The proposed model can be extended to the transient conditions as well. The SPICE equivalent model is designed and current-voltage characteristics and Transfer characteristics are comparatively analysed. The dc current-voltage characteristics, as well as dc transfer characteristics, have been plotted for an FGMOS with W/L=0.25μm/0.375μm, the inter-poly capacitance of 0.8fF for both programmed and erased states. The Comparative analysis has been made between the present model and capacitive coefficient coupling methods which were already available.

Keywords: FGMOS, floating gate transistor, capacitive coupling coefficient, SPICE model

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Authors: Jou-An Chung

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The purpose of this study is to investigate the verb bias of the Mandarin verbs in children’s reading materials and provide the criteria for categorization. Verb bias varies cross-linguistically. As Mandarin and English are typological different, this study hopes to shed light on Mandarin verb bias with the use of corpus and provide thorough and detailed criteria for analysis. Moreover, this study focuses on children’s reading materials since it is a significant issue in understanding children’s sentence processing. Therefore, investigating verb bias of Mandarin verbs in children’s reading materials is also an important issue and can provide further insights into children’s sentence processing. The small corpus is built up for this study. The corpus consists of the collection of school textbooks and Mandarin Daily News for children. The files are then segmented and POS tagged by JiebaR (Chinese segmentation with R). For the ease of analysis, the one-word character verbs and intransitive verbs are excluded beforehand. The total of 20 high frequency verbs are hand-coded and are further categorized into one of the three types, namely DO type, SC type and other category. If the frequency of taking Other Type exceeds the threshold of 25%, the verb is excluded from the study. The results show that 10 verbs are direct object bias verbs, and six verbs are sentential complement bias verbs. The paired T-test was done to assure the statistical significance (p = 0.0001062 for DO bias verb, p=0.001149 for SC bias verb). The result has shown that in children’s reading materials, the DO biased verbs are used more than the SC bias verbs since the simplest structure of sentences is easier for children’s sentence comprehension or processing. In sum, this study not only discussed verb bias in child's reading materials but also provided basic coding criteria for verb bias analysis in Mandarin and underscored the role of context. Sentences are easier for children’s sentence comprehension or processing. In sum, this study not only discussed verb bias in child corpus, but also provided basic coding criteria for verb bias analysis in Mandarin and underscored the role of context.

Keywords: corpus linguistics, verb bias, child language, psycholinguistics

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Authors: Sumachaya Harnsukworapanich, Tetsuo Ichimori

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The apportionment method is used by many countries, to calculate the distribution of seats in political bodies. For example, this method is used in the United States (U.S.) to distribute house seats proportionally based on the population of the electoral district. Famous apportionment methods include the divisor methods called the Adams Method, Dean Method, Hill Method, Jefferson Method and Webster Method. Sometimes the results from the implementation of these divisor methods are unfair and include errors. Therefore, it is important to examine the optimization of this method by using a bias measurement to figure out precise and fair results. In this research we investigate the bias of divisor methods in the U.S. Houses of Representatives toward large and small states by applying the Stolarsky Mean Method. We compare the bias of the apportionment method by using two famous bias measurements: The Balinski and Young measurement and the Ernst measurement. Both measurements have a formula for large and small states. The Third measurement however, which was created by the researchers, did not factor in the element of large and small states into the formula. All three measurements are compared and the results show that our measurement produces similar results to the other two famous measurements.

Keywords: apportionment, bias, divisor, fair, measurement

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Authors: Katie Strong, Brian P. O'Connor, Jacqueline M. Kanippayoor

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To date, self-report measures of psychopathy have largely been conceptualized with a male-focused understanding of the disorder, with the presumption that psychopathy expression is uniform across genders. However, generalizing this understanding to the female population may be misleading. The objective of this research was to explore gender differences in the expression of psychopathy and to assess current self-report psychopathy measures for gender bias. It was hypothesized that some items in commonly used measures of psychopathy may show gender bias and that existing measures may not contain enough items that are relevant to the manifestation of psychopathy in women. An exploratory investigation was conducted on statistical bias in common measures of psychopathy, and novel, relevant, but previously neglected items and measures were included in a new data collection. The participant pool included a sample of 403 university students and 354 participants recruited using Amazon Mechanical Turk. Item Response Theory methods - including Differential Item Functioning - were used to assess for the item- and test- level bias across several common self-report measures of psychopathy. Analyses indicated occasional and modest levels of item-level bias, and that some additional female-relevant items merit consideration for inclusion in measures of psychopathy. These findings suggest that current self-report measures of psychopathy may be demonstrating gender-bias and warrant further examination.

Keywords: gender, measurement bias, personality, psychopathy

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Authors: Puneet Chawla, Balwinder Singh

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Recently, increased attention has been devoted to the voltage instability phenomenon in power systems. Many techniques have been proposed in the literature for evaluating and predicting voltage stability using steady state analysis methods. In this paper, P-V and Q-V curves have been generated for a 57 bus Patiala Rajpura circle of India. The power-flow program is developed in MATLAB using Newton-Raphson method. Using Q-V curves, the weakest bus of the power system and the maximum reactive power change permissible on that bus is calculated. STATCOMs are placed on the weakest bus to improve the voltage and hence voltage stability and also the power transmission capability of the line.

Keywords: voltage stability, reactive power, power flow, weakest bus, STATCOM

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Authors: Kellina Craig-Henderson

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Today, there is increased attention to the role of social perceptions in the selection, hiring, and management of employees and the evaluation and promotion of students. In some contexts, where women or members of certain social groups have been historically underrepresented there is evidence that these perceptions reflect the implicit biases people harbor. Research in the social and psychological sciences reveals that implicit biases against women unfairly disadvantage them in academic and work settings. This presentation will provide an overview of the current state of knowledge on an implicit bias as well as the problems associated with it. How employers, educators and other evaluators can inoculate themselves from the pernicious effects of these biases will be considered.

Keywords: gender equity, implicit bias, social psychology, unconscious bias

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Authors: Jiaqi Huang, Yuheng Wang

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Premises selection, the task of selecting a set of axioms for proving a given conjecture, is a major bottleneck in automated theorem proving. An array of deep-learning-based methods has been established for premises selection, but a perfect performance remains challenging. Our study examines the inaccuracy of deep neural networks in premises selection. Through training network models using encoded conjecture and axiom pairs from the Mizar Mathematical Library, two potential biases are found: the network models classify more premises as necessary than unnecessary, referred to as the ‘positive bias’, and the network models perform better in proving conjectures that paired with more axioms, referred to as ‘length bias’. The ‘positive bias’ and ‘length bias’ discovered could inform the limitation of existing deep neural networks.

Keywords: automated theorem proving, premises selection, deep learning, interpreting deep learning

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Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

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This paper discusses the undesirable charge transfer by the parasitic capacitances of the input transistors in a voltage sense amplifier. Due to its intrinsic rail-to-rail voltage transition, the input sides are inevitably disturbed. It can possible disturb the stabilities of the reference voltage levels. Moreover, it becomes serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the systems. In order to alleviate the internal node voltage transition, the internal node stabilization technique is proposed by utilizing an additional biasing circuit. It achieves 47% and 43% improvements for node stabilization and input referred disturbance, respectively.

Keywords: voltage sense amplifier, voltage transition, node stabilization, biasing circuits

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Authors: Kyoung-Il Do, Jun-Geol Park, Hee-Guk Chae, Jeong-Yun Seo, Yong-Seo Koo

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A SCR stacking structure is proposed to have improved Latch-up immunity. In comparison with conventional SCR (Silicon Controlled Rectifier), the proposed Electrostatic Discharge (ESD) protection circuit has a lower trigger characteristic by using the LVTSCR (Low Voltage Trigger) structure. Also the proposed ESD protection circuit has improved Holding Voltage Characteristic by using N-stack technique. These characteristics enable to have latch-up immunity in operating conditions. The simulations are accomplished by using the Synopsys TCAD. It has a trigger voltage of 8.9V and a holding voltage of 1.8V in a single structure. And when applying the stack technique, 2-stack has the holding voltage of 3.8V and 3-stack has the holding voltage of 5.1 V.

Keywords: electrostatic discharge (ESD), low voltage trigger silicon controlled rectifier (LVTSCR), MVTSCR, power clamp, silicon controlled rectifier (SCR), latch-up

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Authors: Megha Chavda, Parth Thummar, Rahul Ghetia

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This paper presents the voltage and current control of microgrid accompanied by the synchronization of microgrid with the main utility grid in both islanded and grid-connected modes. Distributed Energy Resources (DERs) satisfy the wide-spread power demand of consumer by behaving as a micro source for a low voltage (LV) grid or microgrid. Synchronization of the microgrid with the main utility grid is done using PLL and PWM gate pulse generation technique is used for the Voltage Source Converter. Potential Function method achieves the voltage and current control of this microgrid in both islanded and grid-connected modes. A low voltage grid consisting of three distributed generators (DG) is considered for the study and is simulated in time-domain using PSCAD/EMTDC software. The simulation results depict the appropriateness of voltage and current control of microgrid and synchronization of microgrid with the medium voltage (MV) grid.

Keywords: microgrid, distributed energy resources, voltage and current control, voltage source converter, pulse width modulation, phase locked loop

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Authors: Sanghoon Park, Ki-Jin Kim, Kwang-Ho Ahn

Abstract:

This paper discusses the undesirable charge transfer through the parasitic capacitances of the input transistors in a multi-inputs voltage sense amplifier. Its intrinsic rail-to-rail voltage transitions at the output nodes inevitably disturb the input sides through the capacitive coupling between the outputs and inputs. Then, it can possible degrade the stabilities of the reference voltage levels. Moreover, it becomes more serious in multi-channel systems by altering them for other channels, and so degrades the linearity of the overall systems. In order to alleviate the internal node voltage transition, the internal node stabilization techniques are proposed. It achieves 45% and 40% improvements for node stabilization and input referred disturbance, respectively.

Keywords: voltage sense amplifier, multi-inputs, voltage transition, node stabilization, biasing circuits

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Authors: Jun-Geol Park, Kyoung-Il Do, Min-Ju Kwon, Kyung-Hyun Park, Yong-Seo Koo

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In this paper, we proposed the SCR (Silicon Controlled Rectifier)-based ESD (Electrostatic Discharge) protection circuit for latch-up immunity. The proposed circuit has a lower trigger voltage and a higher holding voltage characteristic by using the zener diode structure. These characteristics prevent latch-up problem in normal operating conditions. The proposed circuit was analyzed to figure out the electrical characteristics by the variations of design parameters D1, D2 and stack technology to obtain the n-fold electrical characteristics. The simulations are accomplished by using the Synopsys TCAD simulator. When using the stack technology, 2-stack has the holding voltage of 6.9V and 3-stack has the holding voltage of 10.9V.

Keywords: ESD, SCR, trigger voltage, holding voltage

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Authors: Shao-Ku Kao

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This paper presents an active rectifier with time-domain delay compensation to enhance the efficiency. A delay calibration circuit is designed to convert delay time to voltage and adaptive control on/off delay in variable input voltage. This circuit is designed in 0.18 mm CMOS process. The input voltage range is from 2 V to 3.6 V with the output voltage from 1.8 V to 3.4 V. The efficiency can maintain more than 85% when the load from 50 Ω ~ 1500 Ω for 3.6 V input voltage. The maximum efficiency is 92.4 % at output power to be 38.6 mW for 3.6 V input voltage.

Keywords: wireless power transfer, active diode, delay compensation, time to voltage converter, PCE

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Authors: Shivarudraswamy, Anubhav Shrivastava, Lakshya Bhat

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Distributed generation has indeed become a major area of interest in recent years. Distributed Generation can address large number of loads in a power line and hence has better efficiency over the conventional methods. However there are certain drawbacks associated with it, increase in voltage being the major one. This paper addresses the voltage control at the buses for an IEEE 30 bus system by regulating reactive power. For carrying out the analysis, the suitable location for placing distributed generators (DG) is identified through load flow analysis and seeing where the voltage profile is dipping. MATLAB programming is used to regulate the voltage at all buses within +/-5% of the base value even after the introduction of DG’s. Three methods for regulation of voltage are discussed. A sensitivity based analysis is later carried out to determine the priority among the various methods listed in the paper.

Keywords: distributed generators, distributed system, reactive power, voltage control

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Authors: A. N. Moulai Khatir

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SOI-Multifin-FETs are placed to be the workhorse of the industry for the coming few generations, and thus, in a few years because their excellent transistor characteristics, ideal sub-threshold swing, low drain induced barrier lowering (DIBL) without pocket implantation, and negligible body bias dependency. The corner effect may also exist in the two lower corners; this effect is called the BOX effect, which can also occur in the direction X-Z. The electric field lines from the source and drain cross the bottom oxide and arrive in the silicon. This effect is also called DIVSB (Drain Induced Virtual Substrate Basing). The potential in the silicon film in particular near the drain is increased by the drain bias. It is similar to DIBL and result in a decrease of the threshold voltage. This work provides an understanding of the limitation of this effect by reducing the fin width for components with increased fin number.

Keywords: SOI, finFET, corner effect, dual-gate, tri-gate, BOX, multi-finFET

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Authors: R. C. Sharma, Rishabh Bansal, Prajwal Menon, Manoj K. Sharma

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Silicon-air battery is highly promising for electric vehicles due to its high theoretical energy density (8470 Whkg⁻¹) and its discharge products are non-toxic. For the first time, pure silicon and germanium powders are used as anode material. Nickel wire meshes embedded with charcoal and manganese dioxide powder as cathode and concentrated potassium hydroxide is used as electrolyte. Voltage-time curves have been presented in this study for pure silicon and germanium powder and 5% and 10% germanium with silicon powder. Silicon powder cell assembly gives a stable voltage of 0.88 V for ~20 minutes while Si-Ge provides cell voltage of 0.80-0.76 V for ~10-12 minutes, and pure germanium cell provides cell voltage 0.80-0.76 V for ~30 minutes. The cell voltage is higher for concentrated (10%) sodium hydroxide solution (1.08 V) and it is stable for ~40 minutes. A sharp decrease in cell voltage beyond 40 min may be due to rapid corrosion.

Keywords: Silicon-air battery, Germanium-air battery, voltage-time curve, open circuit voltage, Anodic corrosion

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Authors: Kyung-Hoon Jang, Jae-Hyo Park, Kwang-Yeop Jang, Dongjin Kim

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The Tesla coil is an electrical resonant transformer circuit designed by inventor Nikola Tesla in 1891. It is used to produce high voltage, low current and high frequency alternating current electricity. Tesla experimented with a number of different configurations consisting of two or sometimes three coupled resonant electric circuits. This paper focuses on development and high voltage education to apply a Tesla coil to cuisine for high quality flavor and taste conditioning as well as high voltage education under 50 kV corona discharge. The result revealed that the velocity of roasted black belly pork by Tesla coil is faster than that of conventional methods such as hot grill and steel plate etc. depending on applied voltage level and applied voltage time. Besides, carbohydrate and crude protein increased, whereas natrium and saccharides significantly decreased after lightning surge by Tesla coil. This idea will be useful in high voltage education and high voltage application.

Keywords: corona discharge, Tesla coil, high voltage application, high voltage education

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Authors: Adriana Avila Zuniga Nordfjeld

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This paper provides a literature review to document the state of the art with respect to handling 'human bias' in decision making within the established quality management systems (QMS) and LEAN theory, in the context of shipbuilding. Previous research shows that in shipbuilding there is a huge deviation from the planned man-hours under the project management to the actual man-hours used because of errors in planning and reworks caused by human bias in the information flows among others. This reduces the efficiency and increases operational costs. Thus, the research question is how QMS and LEAN handle biases. The findings show the gap in studying the integration of methods to handle human bias in decision making into QMS and lean, not only within shipbuilding but also in general. Theoretical and practical implications are discussed for researchers and practitioners in the areas of decision making QMS, LEAN, and future research is suggested.

Keywords: human bias, decision making, LEAN shipbuilding, quality management systems

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Authors: Nor Asrina Binti Ramlee

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Voltage sag, voltage swell, high-frequency noise and voltage transients are kinds of disturbances in power quality. They are also known as power quality events. Equipment used in the industry nowadays has become more sensitive to these events with the increasing complexity of equipment. This leads to the importance of distributing clean power quality to the consumer. To provide better service, the best analysis on power quality is very vital. Thus, this paper presents the events detection focusing on voltage sag and swell. The method is developed by applying time domain signal analysis using wavelet transform approach in MATLAB. Four types of mother wavelet namely Haar, Dmey, Daubechies, and Symlet are used to detect the events. This project analyzed real interrupted signal obtained from 22 kV transmission line in Skudai, Johor Bahru, Malaysia. The signals will be decomposed through the wavelet mothers. The best mother is the one that is capable to detect the time location of the event accurately.

Keywords: power quality, voltage sag, voltage swell, wavelet transform

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Authors: Reza Aghayan

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This paper illustrates that numerically invariant joint signatures suffer biases in the resulting signatures. Next, we classify the arising biases as Bias Type 1 and Bias Type 2 and show how they can be removed.

Keywords: Euclidean and affine geometries, differential invariant signature curves, numerically invariant joint signatures, numerical analysis, numerical bias, curve analysis

Procedia PDF Downloads 562