Search results for: Silicon Carbide
511 Analysis of 3 dB Directional Coupler Based On Silicon-On-Insulator (SOI) Large Cross-Section Rib Waveguide
Authors: Nurdiani Zamhari, Abang Annuar Ehsan
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The 3 dB directional coupler is designed by using silicon-on-insulator (SOI) large cross-section and simulate by Beam Propagation Method at the communication wavelength of 1.55 µm and 1.48 µm. The geometry is shaped with rib height (H) of 6 µm and varied in step factor (r) which is 0.5, 0.6, 0.7 and 0.8. The wave guide spacing is also fixed to 5 µm and the slab width is symmetrical. In general, the 3 dB coupling lengths for four different cross-sections are several millimetre long. The 1.48 of wavelength give the longer coupling length if compare to 1.55 at the same step factor (r). Besides, the low loss propagation is achieved with less than 2 % of propagation loss.Keywords: 3 dB directional couplers, silicon-on-insulator, symmetrical rib waveguide, OptiBPM 9
Procedia PDF Downloads 516510 Nano-Texturing of Single Crystalline Silicon via Cu-Catalyzed Chemical Etching
Authors: A. A. Abaker Omer, H. B. Mohamed Balh, W. Liu, A. Abas, J. Yu, S. Li, W. Ma, W. El Kolaly, Y. Y. Ahmed Abuker
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We have discovered an important technical solution that could make new approaches in the processing of wet silicon etching, especially in the production of photovoltaic cells. During its inferior light-trapping and structural properties, the inverted pyramid structure outperforms the conventional pyramid textures and black silicone. The traditional pyramid textures and black silicon can only be accomplished with more advanced lithography, laser processing, etc. Importantly, our data demonstrate the feasibility of an inverted pyramidal structure of silicon via one-step Cu-catalyzed chemical etching (CCCE) in Cu (NO3)2/HF/H2O2/H2O solutions. The effects of etching time and reaction temperature on surface geometry and light trapping were systematically investigated. The conclusion shows that the inverted pyramid structure has ultra-low reflectivity of ~4.2% in the wavelength of 300~1000 nm; introduce of Cu particles can significantly accelerate the dissolution of the silicon wafer. The etching and the inverted pyramid structure formation mechanism are discussed. Inverted pyramid structure with outstanding anti-reflectivity includes useful applications throughout the manufacture of semi-conductive industry-compatible solar cells, and can have significant impacts on industry colleagues and populations.Keywords: Cu-catalyzed chemical etching, inverted pyramid nanostructured, reflection, solar cells
Procedia PDF Downloads 154509 Ni-Based Hardfacing Alloy Reinforced with Fused Eutectic Tungsten Carbide Deposited on Infiltrated WC-W-Ni Substrate by Oxyacetylene Welding
Authors: D. Miroud, H. Mokaddem, M. Tata, N. Foucha
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The body of PDC (polycrystalline diamond compact) drill bit can be manufactured from two different materials, steel and tungsten carbide matrix. Commonly the steel body is produced by machining, thermal spraying a bonding layer and hardfacing of Ni-based matrix reinforced with fused eutectic tungsten carbide (WC/W2C). The matrix body bit is manufactured by infiltrating tungsten carbide particles, with a Copper binary or ternary alloy. By erosion-corrosion mechanisms, the PDC drill bits matrix undergoes severe damage, occurring particularly around the PDC inserts and near injection nozzles. In this study, we investigated the possibility to repair the damaged matrix regions by hardfacing technic. Ni-based hardfacing alloy reinforced with fused eutectic tungsten carbide is deposited on infiltrated WC-W-Ni substrate by oxyacetylene welding (OAW). The microstructure at the hardfacing / matrix interface is characterized by SEM- EDS, XRD and micro hardness Hv0.1. The hardfacing conditions greatly affect the dilution phenomenon and the distribution of carbides at the interface, without formation of transition zone. During OAW welding deposition, interdiffusion of atoms occurs: Cu and Sn diffuse from infiltrated matrix substrate into hardfacing and simultaneously Cr and Si alloy elements from hardfacing diffuse towards the substrate. The dilution zone consists of a nickel-rich phase with a heterogeneous distribution of eutectic spherical (Ni-based hardfacing alloy) and irregular (matrix) WC/W2C carbides and a secondary phase rich in Cr-W-Si. Hardfacing conditions cause the dissolution of banding around both spherical and irregular carbides. The micro-hardness of interface is significantly improved by the presence of secondary phase in the inter-dendritic structure.Keywords: dilution, dissolution, hardfacing, infiltrated matrix, PDC drill bits
Procedia PDF Downloads 341508 Optimization of Thermopile Sensor Performance of Polycrystalline Silicon Film
Authors: Li Long, Thomas Ortlepp
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A theoretical model for the optimization of thermopile sensor performance is developed for thermoelectric-based infrared radiation detection. It is shown that the performance of polycrystalline silicon film thermopile sensor can be optimized according to the thermoelectric quality factor, sensor layer structure factor, and sensor layout geometrical form factor. Based on the properties of electrons, phonons, grain boundaries, and their interactions, the thermoelectric quality factor of polycrystalline silicon is analyzed with the relaxation time approximation of the Boltzmann transport equation. The model includes the effect of grain structure, grain boundary trap properties, and doping concentration. The layer structure factor is analyzed with respect to the infrared absorption coefficient. The optimization of layout design is characterized by the form factor, which is calculated for different sensor designs. A double-layer polycrystalline silicon thermopile infrared sensor on a suspended membrane has been designed and fabricated with a CMOS-compatible process. The theoretical approach is confirmed by measurement results.Keywords: polycrystalline silicon, relaxation time approximation, specific detectivity, thermal conductivity, thermopile infrared sensor
Procedia PDF Downloads 139507 Effect of Curing Temperature on Unconfined Compression Strength of Bagasse Ash-Calcium Carbide Residue Treated Organic Clay
Authors: John Trihatmoko, Luky Handoko
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A series of experimental program was undertaken to study the effect of curing temperature on the unconfined compression strength of bagasse ash (BA) - calcium carbide residue (CCR) stabilized organic clay (OC). A preliminary experiment was performed to get the physical properties of OC, and to get the optimum water content (OMC), the standard compaction test was done. The stabilizing agents used in this research was (40% BA + 60% CCR) . Then to obtain the best binder proportion, unconfined compression test was undertaken for OC + 3, 6, 9, 12 and 15% of binder with 7, 14, 21, 28 and 56 days curing period. The best quantity of the binder was found on 9%. Finally, to study the effect of curing temperature, the unconfined compression test was performed on OC + 9% binder with 7, 14, 21, 28 and 56 days curing time with 20O, 25O, 30O, 40O, and 50O C curing temperature. The result indicates that unconfined compression strength (UCS) of treated OC improve according to the increase of curing temperature at the same curing time. The improvement of UCS is probably due to the degree of cementation and pozzolanic reactions.Keywords: curing temperature, organic clay, bagasse ash, calcium carbide residue, unconfined compression strength
Procedia PDF Downloads 125506 Numerical Modelling of Surface Waves Generated by Low Frequency Electromagnetic Field for Silicon Refinement Process
Authors: V. Geza, J. Vencels, G. Zageris, S. Pavlovs
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One of the most perspective methods to produce SoG-Si is refinement via metallurgical route. The most critical part of this route is refinement from boron and phosphorus. Therefore, a new approach could address this problem. We propose an approach of creating surface waves on silicon melt’s surface in order to enlarge its area and accelerate removal of boron via chemical reactions and evaporation of phosphorus. A two dimensional numerical model is created which includes coupling of electromagnetic and fluid dynamic simulations with free surface dynamics. First results show behaviour similar to experimental results from literature.Keywords: numerical modelling, silicon refinement, surface waves, VOF method
Procedia PDF Downloads 252505 The Structural and Electrical Properties of Cadmium Implanted Silicon Diodes at Room Temperature
Authors: J. O. Bodunrin, S. J. Moloi
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This study reports on the x-ray crystallography (XRD) structure of cadmium-implanted p-type silicon, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of unimplanted and cadmium-implanted silicon-based diodes. Cadmium was implanted at the energy of 160 KeV to the fluence of 10¹⁵ ion/cm². The results obtained indicate that the diodes were well fabricated, and the introduction of cadmium results in a change in behavior of the diodes from normal exponential to ohmic I-V behavior. The C-V measurements, on the other hand, show that the measured capacitance increased after cadmium doping due to the injected charge carriers. The doping density of the p-Si material and the device's Schottky barrier height was extracted, and the doping density of the undoped p-Si material increased after cadmium doping while the Schottky barrier height reduced. In general, the results obtained here are similar to those obtained on the diodes fabricated on radiation-hard material, indicating that cadmium is a promising metal dopant to improve the radiation hardness of silicon. Thus, this study would assist in adding possible options to improve the radiation hardness of silicon to be used in high energy physics experiments.Keywords: cadmium, capacitance-voltage, current-voltage, high energy physics experiment, x-ray crystallography, XRD
Procedia PDF Downloads 132504 Realization and Characterization of TiN Coating and Metal Working Application
Authors: Nadjette Belhamra, Abdelouahed Chala, Ibrahim Guasmi
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Titanium nitride coatings have been extensively used in industry, such as in cutting tools. TiN coating were deposited by chemical vapour deposition (CVD) on carbide insert at a temperature between 850°C and 1100°C, which often exceeds the hardening treatment temperature of the metals. The objective of this work is to realize, to characterize of TiN coating and to apply it in the turning of steel 42CrMo4 under lubrification. Various experimental techniques were employed for the microstructural characterization of the coatings, e. g., X-ray diffraction (XRD), scanning electron microscope (SEM) model JOEL JSM-5900 LV, equipped with energy dispersive X-ray (EDX). The results show that TiN-coated demonstrate a good wear resistance.Keywords: hard coating TiN, carbide inserts, machining, turning, wear
Procedia PDF Downloads 553503 Low Trigger Voltage Silicon Controlled Rectifier Stacking Structure with High Holding Voltage for High Voltage Applications
Authors: Kyoung-Il Do, Jun-Geol Park, Hee-Guk Chae, Jeong-Yun Seo, Yong-Seo Koo
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A SCR stacking structure is proposed to have improved Latch-up immunity. In comparison with conventional SCR (Silicon Controlled Rectifier), the proposed Electrostatic Discharge (ESD) protection circuit has a lower trigger characteristic by using the LVTSCR (Low Voltage Trigger) structure. Also the proposed ESD protection circuit has improved Holding Voltage Characteristic by using N-stack technique. These characteristics enable to have latch-up immunity in operating conditions. The simulations are accomplished by using the Synopsys TCAD. It has a trigger voltage of 8.9V and a holding voltage of 1.8V in a single structure. And when applying the stack technique, 2-stack has the holding voltage of 3.8V and 3-stack has the holding voltage of 5.1 V.Keywords: electrostatic discharge (ESD), low voltage trigger silicon controlled rectifier (LVTSCR), MVTSCR, power clamp, silicon controlled rectifier (SCR), latch-up
Procedia PDF Downloads 458502 First Principle Calculation of The Magnetic Properties of Mn-doped 6H-SiC
Authors: M. Al Azri, M. Elzain, K. Bouziane, S. M. Chérif
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The electronic and magnetic properties of 6H-SiC with Mn impurities have been calculated using ab-initio calculations. Various configurations of Mn sites and Si and C vacancies were considered. The magnetic coupling between the two Mn atoms at substitutional and interstitials sites with and without vacancies is studied as a function of Mn atoms interatomic distance. It was found that the magnetic interaction energy decreases with increasing distance between the magnetic atoms. The energy levels appearing in the band gap due to vacancies and due to Mn impurities are determined. The calculated DOS’s are used to analyze the nature of the exchange interaction between the impurities. The band coupling model based on the p-d and d-d level repulsions between Mn and SiC has been used to describe the magnetism observed in each configuration. Furthermore, the impacts of applying U to Mn-d orbital on the magnetic moment have also been investigated. The results are used to understand the experimental data obtained on Mn- 6H-SiC (as-implanted and as –annealed) for various Mn concentration (CMn = 0.7%, 1.6%, 7%).Keywords: ab-initio calculations, diluted magnetic semiconductors, magnetic properties, silicon carbide
Procedia PDF Downloads 291501 Influence of Boron and Germanium Doping on Physical-Mechanical Properties of Monocrystalline Silicon
Authors: Ia Kurashvili, Giorgi Darsavelidze, Giorgi Chubinidze, Marina Kadaria
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Boron-doped Czochralski (CZ) silicon of p-type, widely used in the photovoltaic industry is suffering from the light-induced-degradation (LID) of bulk electrophysical characteristics. This is caused by specific metastable B-O defects, which are characterized by strong recombination activity. In this regard, it is actual to suppress B-O defects in CZ silicon. One of the methods is doping of silicon by different isovalent elements (Ge, C, Sn). The present work deals with the investigations of the influence of germanium doping on the internal friction and shear modulus amplitude dependences in the temperature interval of 600-800⁰C and 0.5-5 Hz frequency range in boron-containing monocrystalline silicon. Experimental specimens were grown by Czochralski method (CZ) in [111] direction. Four different specimens were investigated: Si+0,5at%Ge:B (5.1015cm-3), Si+0,5at%Ge:B (1.1019cm-3), Si+2at%Ge:B (5.1015cm-3) and Si+2at%Ge:B (1.1019cm-3). Increasing tendency of dislocation density and inhomogeneous distribution in silicon crystals with high content of boron and germanium were revealed by metallographic studies on the optical microscope of NMM-80RF/TRF. Weak increase of current carriers-holes concentration and slight decrease of their mobility were observed by Van der Pauw method on Ecopia HMS-3000 device. Non-monotonous changes of dislocation origin defects mobility and microplastic deformation characteristics influenced by measuring temperatures and boron and germanium concentrations were revealed. Possible mechanisms of changes of mechanical characteristics in Si-Ge experimental specimens were discussed.Keywords: dislocation, internal friction, microplastic deformation, shear modulus
Procedia PDF Downloads 238500 Effects of Tool State on the Output Parameters of Front Milling Using Discrete Wavelet Transform
Authors: Bruno S. Soria, Mauricio R. Policena, Andre J. Souza
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The state of the cutting tool is an important factor to consider during machining to achieve a good surface quality. The vibration generated during material cutting can also directly affect the surface quality and life of the cutting tool. In this work, the effect of mechanical broken failure (MBF) on carbide insert tools during face milling of AISI 304 stainless steel was evaluated using three levels of feed rate and two spindle speeds for each tool condition: three carbide inserts have perfect geometry, and three other carbide inserts have MBF. The axial and radial depths remained constant. The cutting forces were determined through a sensory system that consists of a piezoelectric dynamometer and data acquisition system. Discrete Wavelet Transform was used to separate the static part of the signals of force and vibration. The roughness of the machined surface was analyzed for each machining condition. The MBF of the tool increased the intensity and force of vibration and worsened the roughness factors.Keywords: face milling, stainless steel, tool condition monitoring, wavelet discrete transform
Procedia PDF Downloads 146499 An Anode Based on Modified Silicon Nanostructured for Lithium – Ion Battery Application
Authors: C. Yaddaden, M. Berouaken, L. Talbi, K. Ayouz, M. Ayat, A. Cheriet, F. Boudeffar, A. Manseri, N. Gabouze
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Lithium-ion batteries (LIBs) are widely used in various electronic devices due to their high energy density. However, the performance of the anode material in LIBs is crucial for enhancing the battery's overall efficiency. This research focuses on developing a new anode material by modifying silicon nanostructures, specifically porous silicon nanowires (PSiNWs) and porous silicon nanoparticles (NPSiP), with silver nanoparticles (Ag) to improve the performance of LIBs. The aim of this research is to investigate the potential application of PSiNWs/Ag and NPSiP/Ag as anodes in LIBs and evaluate their performance in terms of specific capacity and Coulombic efficiency. The research methodology involves the preparation of PSiNWs and NPSiP using metal-assisted chemical etching and electrochemical etching techniques, respectively. The Ag nanoparticles are introduced onto the nanostructures through electrodissolution of the porous film and ultrasonic treatment. Galvanostatic charge/discharge measurements are conducted between 1 and 0.01 V to evaluate the specific capacity and Coulombic efficiency of both PSiNWs/Ag and NPSiP/Ag electrodes. The specific capacity of the PSiNWs/Ag electrode is approximately 1800 mA h g-1, with a Coulombic efficiency of 98.8% at the first charge/discharge cycle. On the other hand, the NPSiP/Ag electrode exhibits a specific capacity of 2600 mAh g-1. Both electrodes show a slight increase in capacity retention after 80 cycles, attributed to the high porosity and surface area of the nanostructures and the stabilization of the solid electrolyte interphase (SEI). This research highlights the potential of using modified silicon nanostructures as anodes for LIBs, which can pave the way for the development of more efficient lithium-ion batteries.Keywords: porous silicon nanowires, silicon nanoparticles, lithium-ion batteries, galvanostatic charge/discharge
Procedia PDF Downloads 63498 An Investigation of Foam Glass Production from Sheet Glass Waste and SiC Foaming Agent
Authors: Aylin Sahin, Recep Artir, Mustafa Kara
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Foam glass is a remarkable material with having incomparable properties like low weight, rigidity, high thermal insulation capacity and porous structure. In this study, foam glass production was investigated with using glass powder from sheet glass waste and SiC powder as foaming agent. Effects of SiC powders and sintering temperatures on foaming process were examined. It was seen that volume expansions (%), cellular structures and pore diameters of obtained foam glass samples were highly depending on composition ratios and sintering temperature. The study showed that various foam glass samples having with homogenous closed porosity, low weight and low thermal conductivity were achieved by optimizing composition ratios and sintering temperatures.Keywords: foam glass, foaming, waste glass, silicon carbide
Procedia PDF Downloads 385497 The Influence of Ni Elements on Mechanical Properties and Microstructure of Twinning Induced Plasticity (TWIP)
Authors: Yuksel Akinay, Fatih Hayat
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The influence of Ni elements on mechanical properties and microstructure of twinning induced plasticity (TWIP) steels were investigated in this study. TWIP 1 (0,6C, 24Mn) and TWIP 2 (0,6C, 24Mn, 1Ni) high Mn TWIP (Twinning Induced Plasticity) steels were fabricated, and were annealed at 700°C, 800°C and 900°C for 150 minute and then air-cooled. The microstructures and mechanical properties of specimens were analysed to investigate influence of Ni element on TWIP steel. The carbide precipitations have seen in microstructure of TWIP 1 and TWIP 2 specimen annealed at 700 °C. However, the microstructures of TWIP 1 annealed at 800°C and 900°C are fully austenite and some grains are including annealing twins. However twining did not occur at TWIP 2 specimens annealed at 700 °C, 800 °C and 900 °C. TWIP 2 steel contains also Ni element differently from TWIP 1 steel. It can conclude that, Nickel (Ni) was restrained formation of twinning. The reversion of the tensile strength occurred between 700°C and 800°C because of the carbide precipitation hardening. Beside that, hardness value has decreased between 800 °C and 900 °C, which show a good agreement with the equilibrium dissolution temperature of M3C carbides. However, the results show that, carbide precipitations also are as strong barriers for the formation of twining. For this reason, twinning was not obtained at 700 °C.Keywords: high manganese, heat treatment, SEM, TWIP steel, cold rolling, nickel
Procedia PDF Downloads 357496 Molecular Simulation Study on the Catalytic Role of Silicon-Doped Graphene in Carbon Dioxide Hydrogenation
Authors: Wilmer Esteban Vallejo Narváez, Serguei Fomine
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The theoretical investigation of Si-doped graphene nanoflakes (NFs) was conducted to understand their catalytic impact on CO₂ reduction using molecular hydrogen at the Density Functional Theory (DFT) level. The introduction of silicon by substituting carbon induces defects in the NF structure, resulting in a polyradical ground state. This silicon defect significantly boosts reactivity towards substrates, making Si-doped graphene NFs more catalytically active in CO₂ reduction to formic acid compared to silicene. Notably, Si-doped graphene demonstrates a preference for formic acid over carbon monoxide, mirroring the behavior of silicene. Furthermore, investigations into formic acid-to-formaldehyde and formaldehyde-to-methanol conversions reveal instances where Si-doped graphene outperforms silicene in terms of efficacy. In the final reduction step, the methanol-to-methane reaction unfolds in four stages, with the rate-determining step involving hydrogen transfer from silicon to methyl. Notably, the activation energy for this step is lower in Si-doped graphene compared to silicene. Consequently, Si-doped graphene NFs emerge as superior catalysts with lower activation energies overall. Remarkably, throughout these catalytic processes, Si-doped graphene maintains environmental stability, further highlighting its enhanced catalytic activity without compromising graphene's inherent stability.Keywords: silicon-doped graphene, CO₂ reduction, DFT, catalysis
Procedia PDF Downloads 53495 Photoluminescence Study of Erbium-Mixed Alkylated Silicon Nanocrystals
Authors: Khamael M. Abualnaja, Lidija Šiller, Benjamin R. Horrocks
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Alkylated silicon nanocrystals (C11-SiNCs) were prepared successfully by galvanostatic etching of p-Si(100) wafers followed by a thermal hydrosilation reaction of 1-undecene in refluxing toluene in order to extract C11-SiNCs from porous silicon. Erbium trichloride was added to alkylated SiNCs using a simple mixing chemical route. To the best of our knowledge, this is the first investigation on mixing SiNCs with erbium ions (III) by this chemical method. The chemical characterization of C11-SiNCs and their mixtures with Er3+ (Er/C11-SiNCs) were carried out using X-ray photoemission spectroscopy (XPS). The optical properties of C11-SiNCs and their mixtures with Er3+ were investigated using Raman spectroscopy and photoluminescence (PL). The erbium-mixed alkylated SiNCs shows an orange PL emission peak at around 595 nm that originates from radiative recombination of Si. Er/C11-SiNCs mixture also exhibits a weak PL emission peak at 1536 nm that originates from the intra-4f transition in erbium ions (Er3+). The PL peak of Si in Er/C11-SiNCs mixture is increased in the intensity up to three times as compared to pure C11-SiNCs. The collected data suggest that this chemical mixing route leads instead to a transfer of energy from erbium ions to alkylated SiNCs.Keywords: photoluminescence, silicon nanocrystals, erbium, Raman spectroscopy
Procedia PDF Downloads 366494 Pulse Method for Investigation of Zr-C Phase Diagram at High Carbon Content Domain under High Temperatures
Authors: Arseniy M. Kondratyev, Sergey V. Onufriev, Alexander I. Savvatimskiy
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The microsecond electrical pulse heating technique which provides uniform energy input into an investigated specimen is considered. In the present study we investigated ZrC+C carbide specimens in a form of a thin layer (about 5 microns thick) that were produced using a method of magnetron sputtering on insulating substrates. Specimens contained (at. %): Zr–17.88; C–67.69; N–8.13; O–5.98. Current through the specimen, voltage drop across it and radiation at the wavelength of 856 nm were recorded in the experiments. It enabled us to calculate the input energy, specific heat (from 2300 to 4500 K) and resistivity (referred to the initial dimensions of a specimen). To obtain the true temperature a black body specimen was used. Temperature of the beginning and completion of a phase transition (solid–liquid) was measured.Temperature of the onset of melting was 3150 K at the input energy 2.65 kJ/g; temperature of the completion of melting was 3450 K at the input energy 5.2 kJ/g. The specific heat of the solid phase of investigated carbide calculated using our data on temperature and imparted energy, is close to 0.75 J/gК for temperature range 2100–2800 K. Our results are considered together with the equilibrium Zr-C phase diagram.Keywords: pulse heating, zirconium carbide, high temperatures, melting
Procedia PDF Downloads 323493 Cutting Performance of BDD Coating on WC-Co Tools
Authors: Feng Xu, Zhaozhi Liu, Junhua Xu, Xiaolong Tang, Dunwen Zuo
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Chemical vapor deposition (CVD) diamond coated cutting tool has excellent cutting performance, it is the most ideal tool for the processing of nonferrous metals and alloys, composites, nonmetallic materials and other difficult-to-machine materials efficiently and accurately. Depositing CVD diamond coating on the cemented carbide with high cobalt content can improve its toughness and strength, therefore, it is very important to research on the preparation technology and cutting properties of CVD diamond coated cemented carbide cutting tool with high cobalt content. The preparation technology of boron-doped diamond (BDD) coating has been studied and the coated drills were prepared. BDD coating were deposited on the drills by using the optimized parameters and the SEM results show that there are no cracks or collapses in the coating. Cutting tests with the prepared drills against the silumin and aluminum base printed circuit board (PCB) have been studied. The results show that the wear amount of the coated drill is small and the machined surface has a better precision. The coating does not come off during the test, which shows good adhesion and cutting performance of the drill.Keywords: cemented carbide with high cobalt content, CVD boron-doped diamond, cutting test, drill
Procedia PDF Downloads 440492 Effect of Silicon in Mitigating Cadmium Toxicity in Maize
Authors: Ghulam Hasan Abbasi, Moazzam Jamil, M. Anwar-Ul-Haq
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Heavy metals are significant pollutants in environment and their toxicity is a problem for survival of living things while Silicon (Si) is one of the most ubiquitous macroelements, performing an essential function in healing plants in response to environmental stresses. A hydroponic experiment was conducted to investigate the role of exogenous application of silicon under cadmium stress in six different maize hybrids with five treatments comprising of control, 7.5 µM Cd + 5 mM Si, 7.5 µM Cd + 10 mM Si, 15 µM Cd + 5 mM Si and 15 µM Cd + 10 mM Si. Results revealed that treatments of plants with 10mM Si application under both 7.5µM Cd and 15 µM Cd stress resulted in maximum improvement in plant morphological attributes (root and shoot length, root and shoot fresh and dry weight, leaf area and relative water contents) and antioxidant enzymes (POD and CAT) relative to 5 mM Si application in all maize hybrids. Results regarding Cd concentrations showed that Cd was more retained in roots followed by shoots and then leaves and maximum reduction in Cd uptake was observed at 10mM Si application. Maize hybrid 6525 showed maximum growth and least concentration of Cd whereas maize hybrid 1543 showed the minimum growth and maximum Cd concentration among all maize hybrids.Keywords: antioxidant, cadmium, maize, silicon
Procedia PDF Downloads 518491 Electroless Nickel Boron Deposition onto the SiC and B4C Ceramic Reinforced Materials
Authors: I. Kerti, G. Sezen, S. Daglilar
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This present work is focused on studying to improve low wetting behaviour between liquid metal and ceramic particles. Ceramic particles like SiC and B4C have attracted great attention because of their usability as reinforcement for composite materials. However, poor wettability of particles is one of the major drawbacks of metal matrix composite production. Various methods have been studied to enhance the wetting properties between ceramic materials and metal substrates during ceramic reinforced metal matrix composites. Among these methods, autocatalytic nickel deposition is a unique process for the enhancement of the surface properties of ceramic particles. In fact, it is difficult to obtain continuous and uniform metallic coating on ceramic powders. In this study deposition of nickel boron layer on ceramic particles via autocatalytic plating in borohydride baths were investigated. Firstly, powders with different particle sizes were sensitized and activated respectively in order to ensure catalytic properties. Following the pre-treatment operations, particles were transferred into the coating bath containing nickel sulphate or nickel chloride as the Ni2+ source. The results show that a better bonding and uniform coating layer were obtained for Ni-B coatings with the Ni2+ source of NiCl2.6H2O as compared to NiSO4.6H2O. With the progress of the time, both particle surfaces are completely covered by a continuous and thin nickel boron layer. The surface morphology of the coatings that were analysed using scanning electron microscopy (SEM) show that SiC and B4C particles both distributed and different thickness of Ni-B nanolayers have been successfully coated onto the particles. The particles were mounted into a polimeric resin and polished in order to observe the thickness and the continuity of the coating layer. The composition of the coating layers were also evaluated by EDS analyses. The SEM morphologies and the EDS results of the coatings at different reaction times were adopted for detailed discussion of the Ni-B electroless plating mechanism.Keywords: boron carbide, electroless coating, nickel boron deposition, silicon carbide
Procedia PDF Downloads 348490 Separation Performance of CO₂ by Mixed Matrix Membrane Comprising Carbide-Derived Carbon
Authors: Musa Najimu, Isam Aljundi
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In this study, the development of mixed matrix membrane (MMM) containing carbide-derived carbon (CDC) for the separation of CO₂ was investigated. MMM with four different loadings (0.1 to 2 wt%) were prepared by the dry/wet phase inversion technique. Prior to this, the formula of the control polysulfone (PSF) membrane was optimized in terms of the PSF concentration in a mixture of NMP/THF solvents and ethanol. Prepared samples were characterized and tested for CO₂ and CH₄ gas permeation. The optimization of the control PSF membrane revealed that 30 wt% PSF is the critical polymer concentration in the formulation. Characterization results unveiled reinforcement of thermal stability and improved polarity imparted by CDC in the MMM, in addition to uniform dispersion of filler up to 1 wt% loading. Furthermore, the incorporation of CDC in PSF membrane formulation enhanced both the CO₂ permeance and ideal selectivity over the control membrane. A CDC loading of 0.5 wt% resulted in the highest CO₂ permeance of 5.5 GPU corresponding to 120% increase in permeance while a CDC loading of 1 wt% resulted in the highest selectivity (CO₂ /CH₄) of 27 corresponding to 29% increase in selectivity. Studies of operating temperature effect showed that an optimum operating temperature for M1.0 membrane is 20 ⁰C. In addition, the feed pressure studies showed that high pressure feeds will favor high performance of the membrane and a good CO₂ /CH₄ separation.Keywords: carbide derived carbon, mixed matrix membrane, CO₂ separation, polysulfone
Procedia PDF Downloads 207489 The Response of Optical Properties to Temperature in Three-Layer Micro Device Under Influence of Casimir Force
Authors: Motahare Aali, Fatemeh Tajik
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Here, we investigate the sensitivity the Casimir force and consequently dynamical actuation of a three-layer microswitch to some ambient conditions. In fact, we have considered the effect of optical properties on the stable operation of the microswitch for both good (e.g. metals) and poor conductors via a three layer Casimir oscillator. Indeed, gold (Au) has been chosen as a good conductor which is widely used for Casimir force measurements, and highly doped conductive silicon carbide (SiC) has been considered as a poor conductor which is a promising material for device operating under harsh environments. Also, the intervening stratum is considered ethanol or water. It is also supposed that the microswitches are frictionless and autonomous. Using reduction factor diagrams and bifurcation curves, it has been shown how performance of the microswitches is sensitive to temperature and intervening stratum, moreover it is investigated how the conductivity of the components can affect this sensitivity.Keywords: Casimir force, optical properties, Lifshitz theory, dielectric function
Procedia PDF Downloads 95488 Lanthanum Fluoride with Embedded Silicon Nanocrystals: A Novel Material for Future Electronic Devices
Authors: Golam Saklayen, Sheikh Rashel al Ahmed, Ferdous Rahman, Ismail Abu Bakar
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Investigation on Lanthanum Fluoride LaF3 layer embedding Silicon Nanocrystals (Si-NCs) fabricated using a novel one-step chemical method has been reported in this presentation. Application of this material has been tested for low-voltage operating non-volatile memory and Schottkey-junction solar cell. Colloidal solution of Si-NCs in hydrofluoric acid (HF) was prepared from meso-porous silicon by ultrasonic vibration (sonication). This solution prevents the Si-NCs to be oxidized. On a silicon (Si) substrate, LaCl3 solution in HCl is allowed to react with the colloidal solution of prepared Si-NCs. Since this solution contains HF, LaCl3 reacts with HF and produces LaF3 crystals that deposits on the silicon substrate as a layer embedding Si-NCs. This a novel single step chemical way of depositing LaF3 insulating layer embedding Si-NCs. The X-Ray diffraction of the deposited layer shows a polycrystalline LaF3 deposition on silicon. A non-stoichiometric LaF3 layer embedding Si-NCs was found by EDX analysis. The presence of Si-NCs was confirmed by SEM. FTIR spectroscopy of the deposited LaF3 powder also confirmed the presence of Si-NCs. The size of Si-NCs was found to be inversely proportional to the ultrasonic power. After depositing proper contacts on the back of Si and LaF3, the devices have been tested as a non-volatile memory and solar cell. A memory window of 525 mV was obtained at a programming and erasing bias of 2V. The LaF3 films with Si NCs showed strong absorption and was also found to decrease optical transmittance than pure LaF3 film of same thickness. The I-V characteristics of the films showed a dependency on the incident light intensity where current changed under various light illumination. Experimental results show a lot of promise for Si-NCs-embedded LaF3 layer to be used as an insulating layer in MIS devices as well as an photoactive material in Schottkey junction solar cells.Keywords: silicon nanocrystals (Si NCs), LaF3, colloidal solution, Schottky junction solar cell
Procedia PDF Downloads 392487 Softener Washes Affecting the Shrinkage and Appearance of Knitted Garments
Authors: Ezza Nasir, Babar Ramzan
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Silicon washes on altered knitted fabrics will provide diverse shrinkage trends. The expectation on shrinkage for various apparel products are also changed. However, the effect of shrinkage in garment is still ambiguous. As a result, analysis of shrinkage after different concentrations of silicon washes can provide a more realistic study. The purpose of this study is to analyze the shrinkage with commercial sewing threads in knitted fabric. Study focuses on the effect of different washes on garment measurement and to study the effect of washes on fabric shrinkage. Four different types of knitted fabric were sewn with same length and width measurements. To study the effect of softener washes on shrinkage of garment through subjective ranking, there were critical dimensions for measurements done on body length and width garment appearance and shrinkage.Keywords: shrinkage, dimensions, knitted fabric, silicon
Procedia PDF Downloads 473486 Modeling of Austenitic Stainless Steel during Face Milling Using Response Surface Methodology
Authors: A. A. Selaimia, H. Bensouilah, M. A. Yallese, I. Meddour, S. Belhadi, T. Mabrouki
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The objective of this work is to model the output responses namely; surface roughness (Ra), cutting force (Fc), during the face milling of the austenitic stainless steel X2CrNi18-9 with coated carbide tools (GC4040). For raison, response surface methodology (RMS) is used to determine the influence of each technological parameter. A full factorial design (L27) is chosen for the experiments, and the ANOVA is used in order to evaluate the influence of the technological cutting parameters namely; cutting speed (Vc), feed per tooth, and depth of cut (ap) on the out-put responses. The results reveal that (Ra) is mostly influenced by (fz) and (Fc) is found considerably affected by (ap).Keywords: austenitic stainless steel, ANOVA, coated carbide, response surface methodology (RSM)
Procedia PDF Downloads 369485 Structural and Magnetic Properties of Mn-Doped 6H-SiC
Authors: M. Al Azri, M. Elzain, K. Bouziane, S. M. Chérif
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n-Type 6H-SiC(0001) substrates were implanted with three fluencies of Mn+ 5x1015 Mn/cm2 (Mn content: 0.7%), 1x1016 (~2 %), and 5x1016 cm–2 (7%) with implantation energy of 80 keV and substrate temperature of 365ºC. The samples were characterized using Rutherford Backscattering and Channeling Spectroscopy (RBS/C), High-Resolution X-Ray Diffraction technique (HRXRD), micro-Raman Spectroscopy (μRS), and Superconducting Quantum Interference Device (SQUID) techniques. The aim of our work is to investigate implantation induced defects with dose and to study any correlation between disorder-composition and magnetic properties. In addition, ab-initio calculations were used to investigate the structural and magnetic properties of Mn-doped 6H-SiC. Various configurations of Mn sites and vacancy types were considered. The calculations showed that a substitutional Mn atom at Si site possesses larger magnetic moment than Mn atom at C site. A model is introduced to explain the dependence of the magnetic structure on site occupation. The magnetic properties of ferromagnetically (FM) and antiferromagnetically (AFM) coupled pairs of Mn atoms with and without neighboring vacancies have also been explored.Keywords: ab-initio calculations, diluted magnetic semiconductors, magnetic properties, silicon carbide
Procedia PDF Downloads 324484 Exploring Mechanical Properties of Additive Manufacturing Ceramic Components Across Techniques and Materials
Authors: Venkatesan Sundaramoorthy
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The field of ceramics has undergone a remarkable transformation with the advent of additive manufacturing technologies. This comprehensive review explores the mechanical properties of additively manufactured ceramic components, focusing on key materials such as Alumina, Zirconia, and Silicon Carbide. The study delves into various authors' review technology into the various additive manufacturing techniques, including Stereolithography, Powder Bed Fusion, and Binder Jetting, highlighting their advantages and challenges. It provides a detailed analysis of the mechanical properties of these ceramics, offering insights into their hardness, strength, fracture toughness, and thermal conductivity. Factors affecting mechanical properties, such as microstructure and post-processing, are thoroughly examined. Recent advancements and future directions in 3D-printed ceramics are discussed, showcasing the potential for further optimization and innovation. This review underscores the profound implications of additive manufacturing for ceramics in industries such as aerospace, healthcare, and electronics, ushering in a new era of engineering and design possibilities for ceramic components.Keywords: mechanical properties, additive manufacturing, ceramic materials, PBF
Procedia PDF Downloads 64483 Tensile and Flexural Behavior of Particulate Filled/Polymer Matrix Composites
Authors: M. Alsaadi, A. Erkliğ, M. Bulut
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This paper experimentally investigates the flexural and tensile properties of the industrial wastes sewage sludge ash (SSA) and fly ash (FA), and conventional ceramic powder silicon carbide (SiC) filled polyester composites. Four weight fractions (5, 10, 15 and 20 wt%) for each micro filler were used for production of composites. Then, test samples were produced according to ASTM. The resulting degree of particle dispersion in the polymer matrix was visualized by using scanning electron microscope (SEM). Results from this study showed that the tensile strength increased up to its maximum value at filler content 5 wt% of SSA, FA and SiC. Flexural strength increased with addition of particulate filler up to its maximum value at filler content 5 wt% of SSA and FA while for SiC decreased for all weight fractions gradually. The addition of SSA, FA and SiC fillers resulted in increase of tensile and flexural modulus for all the particulate composites. Industrial waste SSA can be used as an additive with polymer to produce composite materials.Keywords: particle-reinforcement, sewage sludge ash, polymer matrix composites, mechanical properties
Procedia PDF Downloads 372482 Studying the Effect of Silicon Substrate Intrinsic Carrier Concentration on Performance of ZnO/Si Solar Cells
Authors: Syed Sadique Anwer Askari, Mukul Kumar Das
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Zinc Oxide (ZnO) solar cells have drawn great attention due to the enhanced efficiency and low-cost fabrication process. In this study, ZnO thin film is used as the active layer, hole blocking layer, antireflection coating (ARC) as well as transparent conductive oxide. To improve the conductivity of ZnO, top layer of ZnO is doped with aluminum, for top contact. Intrinsic carrier concentration of silicon substrate plays an important role in enhancing the power conversion efficiency (PCE) of ZnO/Si solar cell. With the increase of intrinsic carrier concentration PCE decreased due to increase in dark current in solar cell. At 80nm ZnO and 160µm Silicon substrate thickness, power conversion efficiency of 26.45% and 21.64% is achieved with intrinsic carrier concentration of 1x109/cm3, 1.4x1010/cm3 respectively.Keywords: hetero-junction solar cell, solar cell, substrate intrinsic carrier concentration, ZnO/Si
Procedia PDF Downloads 601