Search results for: RF CMOS

Authors: Mohsen Bagheri, Ahmad Afifi

Abstract:

This paper presents a new method for read out of the piezoresistive accelerometer sensors. The circuit works based on instrumentation amplifier and it is useful for reducing offset in Wheatstone bridge. The obtained gain is 645 with 1 μv/°c equivalent drift and 1.58 mw power consumption. A Schmitt trigger and multiplexer circuit control output node. A high speed counter is designed in this work. The proposed circuit is designed and simulated in 0.18 μm CMOS technology with 1.8 v power supply.

Keywords: piezoresistive accelerometer, zero offset, Schmitt trigger, bidirectional reversible counter

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Authors: Jianrong Wu, Xuan Fu, Akihiro Higashi, Zhiming Tan

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CMOS image sensors with a rolling shutter are used broadly in the digital cameras embedded in mobile devices. The rolling shutter suffers the flicker artifacts from the fluorescent lamp, and it could be observed easily. In this paper, the characteristics of illumination flicker in motion case were analyzed, and two efficient detection methods based on matching fragment selection were proposed. According to the experimental results, our methods could achieve as high as 100% accuracy in static scene, and at least 97% in motion scene.

Keywords: illumination flicker, embedded camera, rolling shutter, detection

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Authors: Karandeep Kaur

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This paper presents the design of power amplifier (PA) for mmWave communication systems. The designed amplifier uses GlobalFoundries 22 FDX technology and works at an operational frequency of 140 GHz in the D-Band. With a supply voltage of 0.8V for the super low threshold voltage transistors, the amplifier is biased in class AB and has a total current consumption of 50 mA. The measured saturated output power from the power amplifier is 5.6 dBm with an output-referred 1dB-compression point of 1.6dBm. The measured gain of PA is 19 dB with 3 dB-bandwidth ranging from 120 GHz to 140 GHz. The chip occupies an area of 795µm × 410µm.

Keywords: mmWave communication system, power amplifiers, 22FDX, D-Band, cross-coupled capacitive neutralization

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Authors: Anuja Askhedkar, G. H. Agrawal, Madhu Gudgunti

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Direct Charge Transfer Switched Capacitor (DCT-SC) DAC is the internal DAC used in Delta-Sigma (∆∑) DAC which works on Over-Sampling concept. The Switched Capacitor DAC mainly suffers from mismatch among capacitors. Mismatch among capacitors in DAC, causes non linearity between output and input. Dynamic Element Matching (DEM) technique is used to match the capacitors. According to element selection logic there are many types. In this paper, Data Weighted Averaging (DWA) technique is used for mismatch shaping. In this paper, the 4 bit DCT-SC-DAC with DWA-DEM technique is implemented using WINSPICE simulation software in 180nm CMOS technology. DNL for DAC with DWA is ±0.03 LSB and INL is ± 0.02LSB.

Keywords: ∑-Δ DAC, DCT-SC-DAC, mismatch shaping, DWA, DEM

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Authors: Gete Umbrey, Saifur Rahman

Abstract:

Graphs are found to be most capable in computing, and its abstract structures have been applied in some specific computations and algorithms like in phase encoding controller, processor microcontroller, and synthesis of a CMOS switching network, etc. Being motivated by these works, we develop an independent approach to study semiring structures and various properties by defining the binary operations which in fact, seems analogous to an existing definition in some sense but with a different approach. This work emphasizes specifically on the construction of semigroup and semiring structures on the set of undirected graphs, and their properties are investigated therein. It is expected that the investigation done here may have some interesting applications in theoretical computer science, networking and decision making, and also on joining of two network systems.

Keywords: graphs, join and union of graphs, semiring, weighted graphs

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Authors: Chyuan Haur Kao, Hsiang Chen, Yu Sheng Tsai, Chen Hao Hung, Yu Shan Lee

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Dielectric electrolyte-insulator-semiconductor sensing membranes-based biosensors have been intensively investigated because of their simple fabrication, low cost, and fast response. However, to enhance their sensing performance, it is worthwhile to explore alternative materials, distinct processes, and novel treatments. An ISFET can be viewed as a variation of MOSFET with the dielectric oxide layer as the sensing membrane. Then, modulation on the work function of the gate caused by electrolytes in various ion concentrations could be used to calculate the ion concentrations. Recently, owing to the advancement of CMOS technology, some high dielectric materials substrates as the sensing membranes of electrolyte-insulator-semiconductor (EIS) structures. The EIS with a stacked-layer of SiO₂ layer between the sensing membrane and the silicon substrate exhibited a high pH sensitivity and good long-term stability. IGZO is a wide-bandgap (~3.15eV) semiconductor of the III-VI semiconductor group with several preferable properties, including good transparency, high electron mobility, wide band gap, and comparable with CMOS technology. IGZO was sputtered by reactive radio frequency (RF) on a p-type silicon wafer with various gas ratios of Ar:O₂ and was treated with rapid thermal annealing in O₂ ambient. The sensing performance, including sensitivity, hysteresis, and drift rate was measured and XRD, XPS, and AFM analyses were also used to study the material properties of the IGZO membrane. Moreover, IGZO was used as a sensing membrane in dielectric EIS bio-sensor structures. In addition to traditional pH sensing capability, detection for concentrations of Na+, K+, urea, glucose, and creatinine was performed. Moreover, post rapid thermal annealing (RTA) treatment was confirmed to improve the material properties and enhance the multi-analyte sensing capability for various ions or chemicals in solutions. In this study, the IGZO sensing membrane with annealing in O₂ ambient exhibited a higher sensitivity, higher linearity, higher H+ selectivity, lower hysteresis voltage and lower drift rate. Results indicate that the IGZO dielectric sensing membrane on the EIS structure is promising for future bio-medical device applications.

Keywords: dielectric sensing membrane, IGZO, hydrogen ion, plasma, rapid thermal annealing

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Authors: Parisa Khoshvaght, Mehdi Hosseinzadeh

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During the past few years, the Residue Number System (RNS) has been receiving considerable interest due to its parallel and fault-tolerant properties. This system is a useful tool for Digital Signal Processing (DSP) since it can support parallel, carry-free, high-speed and low power arithmetic. One of the drawbacks of Residue Number System is the fractional numbers, that is, the corresponding circuit is very hard to realize in conventional CMOS technology. In this paper, we propose a method in which the numbers of transistors are significantly reduced. The related delay is extremely diminished, in the first glance we use this method to solve concerning problem of one decimal functional number some how this proposition can be extended to generalize the idea. Another advantage of this method is the independency on the kind of moduli.

Keywords: computer arithmetic, residue number system, number system, one-Hot, VLSI

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Authors: Xin-Yu Shih, Yue-Qu Liu, Hong-Ru Chou

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This paper presents a low-area and fully-reconfigurable Fast Fourier Transform (FFT) hardware design for 3GPP-LTE communication standard. It can fully support 32 different FFT sizes, up to 2048 FFT points. Besides, a special processing element is developed for making reconfigurable computing characteristics possible, while first-in first-out (FIFO) scheduling scheme design technique is proposed for hardware-friendly FIFO resource arranging. In a synthesis chip realization via TSMC 40 nm CMOS technology, the hardware circuit only occupies core area of 0.2325 mm² and dissipates 233.5 mW at maximal operating frequency of 250 MHz.

Keywords: reconfigurable, fast Fourier transform (FFT), single-path delay feedback (SDF), 3GPP-LTE

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Authors: Zhao Bin, Yan Dan Lei

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In this paper, a multi-pattern parallel PRBS generator and a dedicated parallel BER tester is proposed for the 8-Gbps On-chip interconnection testing. A unique full-parallel PRBS checker is also proposed. The proposed design, together with the custom-designed high-speed parallel-to-serial and the serial-to-parallel circuit, will be used to test different on-chip interconnection transceivers. The design is implemented in TSMC 28nm CMOS technology with working voltage at 1.0 V. The serial to parallel ratio is 8:1 so the parallel PRBS generation and BER Tester can be run at lower speed.

Keywords: PRBS, BER, high speed, generator

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Authors: Varsha Prasad, S. Sandya

Abstract:

Cosmic Ray effects in microelectronics such as single event effect (SET) and total dose ionization (TID) have been of major concern in space electronics since 1970. Advanced CMOS technologies have demonstrated reduced sensitivity to TID effect. However, charge pump Phase Locked Loop is very much vulnerable to single event transient effect. This paper presents an SET analysis model, where the SET is modeled as a double exponential pulse. The time domain analysis reveals that the settling time of the voltage controlled oscillator (VCO) depends on the SET pulse strength, setting the time constant and the damping factor. The analysis of the proposed SET analysis model is confirmed by the simulation results.

Keywords: charge pump, phase locked loop, SET, VCO

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Authors: Vasileios Gerakis, Fontounasios Christos, Alkis Hatzopoulos

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A study of the impact of metal guard rings on the coupling between two square metal pads is presented. The structure is designed over a bulk silicon substrate with epitaxial layer, so the coupling through the substrate is also involved. A lightly doped profile is adopted and is simulated by means of an electromagnetic simulator for various pad distances and different metal layers, assuming a 65 nm bulk CMOS technology. The impact of various guard ring design (geometrical) parameters is examined. Furthermore, the increase of isolation (resulting in reduction of the noise coupling) between the pads by cutting the ring, or by using multiple rings, is also analyzed. S parameters are used to compare the various structures.

Keywords: guard rings, metal pad coupling, millimeter wave frequencies, substrate noise,

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Authors: Ararat Khachatryan, Davit Mirzoyan

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In sub micrometer technology, the aging phenomenon starts to have a significant impact on the reliability of integrated circuits by bringing performance degradation. For that reason, it is important to have a capability to evaluate the aging effects accurately. This paper presents an accurate aging measurement approach based on phase-locked loop (PLL) and voltage-controlled oscillator (VCO) circuit. The architecture is rejecting the circuit self-aging effect from the characteristics of PLL, which is generating the frequency without any aging phenomena affects. The aging monitor is implemented in low power 32 nm CMOS technology, and occupies a pretty small area. Aging simulation results show that the proposed aging measurement circuit improves accuracy by about 2.8% at high temperature and 19.6% at high voltage.

Keywords: aging effect, HCI, NBTI, nanoscale

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Authors: Agord M. Pinto Jr., Yuzo Iano, Leandro T. Manera, Raphael R. N. Souza

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This paper describes an optimization tool-based design strategy for a Current Mode Logic CML divide-by-2 circuit. Representing a building block for output frequency generation in a RFID protocol based-frequency synthesizer, the circuit was designed to minimize the power consumption for driving of multiple loads with unbalancing (at transceiver level). Implemented with XFAB XC08 180 nm technology, the circuit was optimized through MunEDA WiCkeD tool at Cadence Virtuoso Analog Design Environment ADE.

Keywords: divide-by-2 circuit, CMOS technology, PLL phase locked-loop, optimization tool, CML current mode logic, RF transceiver

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Authors: Kittipong Tripetch

Abstract:

This paper proposes for the first time symbolic formula of the power spectrum of cross couple oscillator and its modified circuit. Many principle existed to derived power spectrum in microwave textbook such as impedance, admittance parameters, ABCD, H parameters, etc. It can be compared by graph of power spectrum which methodology is the best from the point of view of practical measurement setup such as condition of impedance parameter which used superposition of current to derived (its current injection of the other port of the circuit is zero, which is impossible in reality). Four Graphs of impedance parameters of cross couple oscillator is proposed. After that four graphs of Scattering parameters of cross couple oscillator will be shown.

Keywords: optimization, power spectrum, impedance parameters, scattering parameter

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Authors: Shao-Ku Kao

Abstract:

This paper presents an active rectifier with time-domain delay compensation to enhance the efficiency. A delay calibration circuit is designed to convert delay time to voltage and adaptive control on/off delay in variable input voltage. This circuit is designed in 0.18 mm CMOS process. The input voltage range is from 2 V to 3.6 V with the output voltage from 1.8 V to 3.4 V. The efficiency can maintain more than 85% when the load from 50 Ω ~ 1500 Ω for 3.6 V input voltage. The maximum efficiency is 92.4 % at output power to be 38.6 mW for 3.6 V input voltage.

Keywords: wireless power transfer, active diode, delay compensation, time to voltage converter, PCE

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Authors: S. Slimani, B. Djellouli

Abstract:

Novel materials and innovative device structures has become necessary for the future of CMOS. High mobility materials like Ge is a very promising material due to its high mobility and is being considered to replace Si in the channel to achieve higher drive currents and switching speeds .Various approaches to circumvent the scaling limits to benchmark the performance of nanoscale MOSFETS with different channel materials, the optimized structure is simulated within nextnano in order to highlight the quantum effects on DG MOSFETs when Si is replaced by Ge and SiO2 is replaced by ZrO2 and HfO2as the gate dielectric. The results have shown that Ge MOSFET have the highest mobility and high permittivity oxides serve to maintain high drive current. The simulations show significant improvements compared with DGMOSFET using SiO2 gate dielectric and Si channel.

Keywords: high mobility, high-k, quantum effects, SOI-DGMOSFET

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Authors: Jun Yu, Yat-Hei Lam, Boris Grinberg, Kevin Chai Tshun Chuan

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This paper presents a 5-V to 30-V current-mode boost converter for powering the drive circuit of a micro-electro-mechanical sensor. The design of a transconductance amplifier and an integrated current sensing circuit are presented. In addition, essential building blocks for power-on protection such as a soft-start and clamp block and supply and clock ready block are discussed in details. The chip is fabricated in a 0.18-μm CMOS process. Measurement results show that the soft-start and clamp block can effectively limit the inrush current during startup and protect the boost converter from startup failure.

Keywords: boost converter, current sensing, power-on protection, step-up converter, soft-start

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Authors: G. Traini, V. Giacometti, R. Mirabelli, V. Patera, D. Pinci, A. Sarti, A. Sciubba, M. Marafini

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The MONDO (MOnitor for Neutron Dose in hadrOntherapy) project aims a precise characterisation of the secondary fast and ultrafast neutrons produced in particle therapy treatments. The detector is composed of a matrix of scintillating fibres (250 um) readout by CMOS Digital-SPAD based sensors. Recoil protons from n-p elastic scattering are detected and used to track neutrons. A prototype was tested with proton beams (Trento Proton Therapy Centre): efficiency, light yield, and track-reconstruction capability were studied. The results of a MonteCarlo FLUKA simulation used to evaluated double scattering efficiency and expected backgrounds will be presented.

Keywords: secondary neutrons, particle therapy, tracking, elastic scattering

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Authors: Kah-Hyong Chang, Xin Liu, Jia Hao Cheong, Saisundar Sankaranarayanan, Dexing Pang, Hongzhao Zheng

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A digital baseband Application-Specific Integrated Circuit (ASIC) is developed for a microchip transponder to transmit signals and temperature levels from biomedical monitoring devices. The transmission protocol is adapted from the ISO/IEC 11784/85 standard. The module has a decimation filter that employs only a single adder-subtractor in its datapath. The filtered output is coded with cyclic redundancy check and transmitted through backscattering Load Shift Keying (LSK) modulation to a reader. Fabricated using the 0.18-μm CMOS technology, the module occupies 0.116 mm² in chip area (digital baseband: 0.060 mm², decimation filter: 0.056 mm²), and consumes a total of less than 0.9 μW of power (digital baseband: 0.75 μW, decimation filter: 0.14 μW).

Keywords: biomedical sensor, decimation filter, radio frequency integrated circuit (RFIC) baseband, temperature sensor

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Authors: Min-Hao Wang, Shih-Chih Chen

Abstract:

Recently, the merits such as simple structure, low power consumption, and compatibility with complementary metal oxide semiconductor (CMOS) process give an advantage of resistive random access memory (RRAM) as a promising candidate for the next generation memory， hafnium dioxide (HfO2) has been widely studied as an oxide layer material, but the use of copper (Cu) as both top and bottom electrodes has rarely been studied. In this study, radio frequency sputtering was used to deposit the intermediate layer HfO₂, and electron beam evaporation was used. For the upper and lower electrodes (cu), using different AR: O ratios, we found that the control of the metal filament will make the filament widely distributed, causing the current to rise to the limit current during Reset. However, if the flow ratio is controlled well, the ON/OFF ratio can reach 104, and the set voltage is controlled below 3v.

Keywords: RRAM, metal filament, HfO₂, Cu electrode

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Authors: Phanumas Khumsat, Chalermchai Janmane

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Low-voltage instrumentation amplifier has been proposed for 3-lead electrocardiogram measurement system. The circuit’s interference rejection technique is based upon common-mode feed-forwarding where common-mode currents have cancelled each other at the output nodes. The common-mode current for cancellation is generated by means of common-mode sensing and emitter or source followers with resistors employing only one transistor. Simultaneously this particular transistor also provides common-mode feedback to the patient’s right/left leg to further reduce interference entering the amplifier. The proposed designs have been verified with simulations in 0.18-µm CMOS process operating under 1.0-V supply with CMRR greater than 80dB. Moreover ECG signals have experimentally recorded with the proposed instrumentation amplifiers implemented from discrete BJT (BC547, BC558) and MOSFET (ALD1106, ALD1107) transistors working with 1.5-V supply.

Keywords: electrocardiogram, common-mode feedback, common-mode feedforward, communication engineering

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Authors: Adonis Menezes, Julio C. Passos

Abstract:

The present work deals with the theoretical and experimental investigation of the convective boiling of CO₂ in macro and mini-channels. A review of the state of the art of convective boiling studies in mini-channels and conventional channels for operating with CO₂ was carried out, with special attention to the flow patterns and pressure drop maps in single-phase and two-phase flows. To carry out an experimental analysis of the convective boiling of CO₂, a properly instrumented experimental bench was built, which allows a parametric analysis for different thermodynamic conditions, such as mass velocities between 200 and 1300 kg/(m².s), pressures between 20 and 70bar, temperature monitoring at the entrance of the mini-channels, heat flow and pressure drop in the test section. The visualization of flow patterns was possible with the use of a high-speed CMOS camera. The results obtained are in line with those found in the literature, both for flow patterns and for the heat transfer coefficient.

Keywords: carbon dioxide, convective boiling, CO₂, mini-channels

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Authors: Mahdiar Hosseighadiry, Farnaz Fotovatikhah, Razali Ismail, Mohsen Khaledian, Mehdi Saeidemanesh

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In this paper, a new low-power high-performance full adder is presented based on a new design method. The proposed method relies on pass gate design and provides full-swing circuits with minimum number of transistors. The method has been applied on SUM, COUT and XOR-XNOR modules resulting on rail-to-rail intermediate and output signals with no feedback transistors. The presented full adder cell has been simulated in 45 and 32 nm CMOS technologies using HSPICE considering parasitic capacitance and compared to several well-known designs from literature. In addition, the proposed cell has been extensively evaluated with different output loads, supply voltages, temperatures, threshold voltages, and operating frequencies. Results show that it functions properly under all mentioned conditions and exhibits less PDP compared to other design styles.

Keywords: full adders, low-power, high-performance, VLSI design

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Authors: Kala Bharathan, R. Seshasayanan

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In this paper, a 1-bit Embedded Logic Full Adder (EFA) circuit in transistor level is proposed, which reduces logic complexity, gives low power and high speed. The design is further extended till 64 bits. To evaluate the performance of EFA, a 16, 32, 64-bit both Linear and Square root Carry Select Adder/Subtractor (CSLAS) Structure is also proposed. Realistic testing of proposed circuits is done on 8 X 8 Modified Booth multiplier and comparison in terms of power and delay is done. The EFA is implemented for different multiplier architectures for performance parameter comparison. Overall delay for CSLAS is reduced to 78% when compared to conventional one. The circuit implementations are done on TSMC 28nm CMOS technology using Cadence Virtuoso tool. The EFA has power savings of up to 14% when compared to the conventional adder. The present implementation was found to offer significant improvement in terms of power and speed in comparison to other full adder circuits.

Keywords: embedded logic, full adder, pdp, xor gate

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Authors: Mohamad Baqer Heidari, Hefzollah.Mohammadian

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This brief presents two original implementations of improved accuracy current-mode multiplier/divider circuits. Besides the advantage of their simplicity, these original multiplier/divider structures present the advantage of very small linearity errors that can be obtained as a result of the proposed design techniques (0.75% and 0.9%, respectively, for an extended range of the input currents). The original multiplier/divider circuits permit a facile reconfiguration, the presented structures representing the functional basis for implementing complex function synthesizer circuits. The proposed computational structures are designed for implementing in 0.18-µm CMOS technology, with a low-voltage operation (a supply voltage of 1.2 V). The circuits’ power consumptions are 60 and 75 µW, respectively, while their frequency bandwidths are 79.6 and 59.7 MHz, respectively.

Keywords: analog signal processing, current-mode operation, functional core, multiplier, reconfigurable circuits, industrial package systems

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Authors: Guo-Ming Sung, Ramavath Naga Raju Naik

Abstract:

This paper presents a low power, high speed, sense-amplifier based flip-flop (SAFF). The flip-flop’s power con-sumption and delay are greatly reduced by employing a new conditionally precharge sense-amplifier stage and a single-ended latch stage. Glitch-free and contention-free latch operation is achieved by using a conditional cut-off strategy. The design uses fewer transistors, has a lower clock load, and has a simple structure, all of which contribute to a near-zero setup time. When compared to previous flip-flop structures proposed for similar input/output conditions, this design’s performance and overall PDP have improved. The post layout simulation of the circuit uses 2.91µW of power and has a delay of 65.82 ps. Overall, the power-delay product has seen some enhancements. Cadence Virtuoso Designing tool with CMOS 90nm technology are used for all designs.

Keywords: high-speed, low-power, flip-flop, sense-amplifier

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Authors: Amir Mahdavi

Abstract:

In this paper, a circuit topology of voltage-controlled oscillators (VCO) which is suitable for ultra-low-phase noise operations is introduced. To do so, a new low phase noise cross-coupled oscillator by using the general topology of cross-coupled oscillator and adding a differential stage for tail current shaping is designed. In addition, a tail current shaping technique to improve phase noise in differential LC VCOs is presented. The tail current becomes large when the oscillator output voltage arrives at the maximum or minimum value and when the sensitivity of the output phase to the noise is the smallest. Also, the tail current becomes small when the phase noise sensitivity is large. The proposed circuit does not use extra power and extra noisy active devices. Furthermore, this topology occupies small area. Simulation results show the improvement in phase noise by 2.5dB under the same conditions and at the carrier frequency of 1 GHz for GSM applications. The power consumption of the proposed circuit is 2.44 mW and the figure of merit (FOM) with -192.2 dBc/Hz is achieved for the new oscillator.

Keywords: LC oscillator, low phase noise, current shaping, diff mode

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Authors: M. Fadlallah, G. Ghibaudo, C. G. Theodorou

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The dynamic variation in memory devices such as the Static Random Access Memory can give errors in read or write operations. In this paper, the effect of low-frequency and random telegraph noise on the dynamic variation of one SRAM cell is detailed. The effect on circuit noise, speed, and length of time of processing is examined, using the Supply Read Retention Voltage and the Read Static Noise Margin. New test run methods are also developed. The obtained results simulation shows the importance of noise caused by dynamic variation, and the impact of Random Telegraph noise on SRAM variability is examined by evaluating the statistical distributions of Random Telegraph noise amplitude in the pull-up, pull-down. The threshold voltage mismatch between neighboring cell transistors due to intrinsic fluctuations typically contributes to larger reductions in static noise margin. Also the contribution of each of the SRAM transistor to total dynamic variation has been identified.

Keywords: low-frequency noise, random telegraph noise, dynamic variation, SRRV

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Authors: Jun Sung Go, Jong Kang Park, Jong Tae Kim

Abstract:

As semi-conductor manufacturing technology evolves; the single event transient problem becomes more significant issue. Single event transient has a critical impact on both combinational and sequential logic circuits, so it is important to evaluate the soft error tolerance of the circuits at the design stage. In this paper, we present a soft error detecting simulation using scan chain. The simulation model generates a single event transient randomly in the circuit, and detects the soft error during the execution of the test patterns. We verified this model by inserting a scan chain in an 8051 microprocessor using 65 nm CMOS technology. While the test patterns generated by ATPG program are passing through the scan chain, we insert a single event transient and detect the number of soft errors per sub-module. The experiments show that the soft error rates per cell area of the SFR module is 277% larger than other modules.

Keywords: scan chain, single event transient, soft error, 8051 processor

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Authors: Hyungil Chae

Abstract:

This work presents a method to reduce spinning current of a Hall-effect sensor for low-power magnetic sensor applications. Spinning current of a Hall-effect sensor changes the direction of bias current periodically and can separate signals from DC-offset. The bias current is proportional to the sensor sensitivity but also increases the power consumption. To achieve both high sensitivity and low power consumption, the bias current can be pulse-width modulated. When the bias current duration Tb is reduced by a factor of N compared to the spinning current period of Tₛ/2, the total power consumption can be saved by N times. N can be large as long as the Hall-effect sensor settles down within Tb. The proposed scheme is implemented and simulated in a 0.18um CMOS process, and the power saving factor is 9.6 when N is 10. Acknowledgements: This work was supported by Institute for Information & communications Technology Promotion (IITP) grant funded by the Korea government (MSIP) (20160001360022003, Development of Hall Semi-conductor for Smart Car and Device).

Keywords: chopper stabilization, Hall-effect sensor, pulse width modulation, spinning current

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