Search results for: enhancement mode GaN power transistors

Authors: Ahmed Abbou, Ali Mousmi, Rachid El Akhrif

Abstract:

This research paper aims to reduce the chattering phenomenon due to control by sliding mode control applied on a wind energy conversion system based on the doubly fed induction generator (DFIG). Our goal is to offset the effect of parametric uncertainties and come as close as possible to the dynamic response solicited by the control law in the ideal case and therefore force the active and reactive power generated by the DFIG to accurately follow the reference values which are provided to it. The simulation results using Matlab / Simulink demonstrate the efficiency and performance of the proposed technique while maintaining the simplicity of control by first order sliding mode.

Keywords: correction of the equivalent command, DFIG, induction machine, sliding mode controller

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Authors: C. G. Jinimole, A. Harsha

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One of the key problems facing in the analysis of Computed Tomography (CT) images is the poor contrast of the images. Image enhancement can be used to improve the visual clarity and quality of the images or to provide a better transformation representation for further processing. Contrast enhancement of images is one of the acceptable methods used for image enhancement in various applications in the medical field. This will be helpful to visualize and extract details of brain infarctions, tumors, and cancers from the CT image. This paper presents a comparison study of five contrast enhancement techniques suitable for the contrast enhancement of CT images. The types of techniques include Power Law Transformation, Logarithmic Transformation, Histogram Equalization, Contrast Stretching, and Laplacian Transformation. All these techniques are compared with each other to find out which enhancement provides better contrast of CT image. For the comparison of the techniques, the parameters Peak Signal to Noise Ratio (PSNR) and Mean Square Error (MSE) are used. Logarithmic Transformation provided the clearer and best quality image compared to all other techniques studied and has got the highest value of PSNR. Comparison concludes with better approach for its future research especially for mapping abnormalities from CT images resulting from Brain Injuries.

Keywords: computed tomography, enhancement techniques, increasing contrast, PSNR and MSE

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Authors: Hamdi Belgacem, Fradi Aymen

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In this paper we present a low power, low cost differential logic unit (LU). The proposed LU receives dual-rail inputs and generates dual-rail outputs. The proposed circuit can be used in Arithmetic and Logic Units (ALU) of processor. It can be also dedicated for self-checking applications based on dual duplication code. Four logic functions as well as their inverses are implemented within a single Logic Unit. The hardware overhead for the implementation of the proposed LU is lower than the hardware overhead required for standard LU implemented with standard CMOS logic style. This new implementation is attractive as fewer transistors are required to implement important logic functions. The proposed differential logic unit can perform 8 Boolean logical operations by using only 16 transistors. Spice simulations using a 32 nm technology was utilized to evaluate the performance of the proposed circuit and to prove its acceptable electrical behaviour.

Keywords: differential logic unit, double pass transistor logic, low power CMOS design, low cost CMOS design

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Authors: David Hasurungan

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This paper objective is to analyze the impact from photovoltaic system integration to power distribution network. The case study in Badak Liquefied Natural Gas (LNG) plant is presented in this paper. Badak LNG electricity network is operated in islanded mode. The total power generation in Badak LNG plant is significantly affected to feed gas supply. Meanwhile, to support the Government regulation, Badak LNG continuously implemented the grid-connected photovoltaic system in existing power distribution network. The impact between train operational mode change in Badak LNG plant and the growth of photovoltaic system is also encompassed in analysis. The analysis and calculation are performed using software Power Factory 15.1.

Keywords: power quality, distribution network, grid-connected photovoltaic system, power management system

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Authors: A. boursali, A. Guen Bouazza, M. Khaouani, Z. Kourdi, B. Bouazza

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This paper presents the design, development and characterization of the devices simulation for X-Band Radar applications. The effect of an InAlN/GaN structure on the RF performance High Electron Mobility Transistor (HEMT) device. Systematic investigations on the small signal as well as power performance as functions of the drain biases are presented. Were improved for X-band applications. The Power Added Efficiency (PAE) was achieved over 23% for X-band. The developed devices combine two InAlN/GaN HEMTs of 30nm gate periphery and exhibited the output power of over 50W. An InAlN/GaN HEMT with 30nm gate periphery was developed and exhibited the output power of over 120W.

Keywords: InAlN/GaN, HEMT, RF analyses, PAE, X-Band, radar

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Authors: Davit Mirzoyan, Ararat Khachatryan

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A process corner monitoring circuit (PCMC) is presented in this work. The circuit generates a signal, the logical value of which depends on the process corner only. The signal can be used in both digital and analog circuits for testing and compensation of process variations (PV). The presented circuit uses only metal-oxide-semiconductor (MOS) transistors, which allow increasing its detection accuracy, decrease power consumption and area. Due to its simplicity the presented circuit can be easily modified to monitor parametrical variations of only n-type and p-type MOS (NMOS and PMOS, respectively) transistors, resistors, as well as their combinations. Post-layout simulation results prove correct functionality of the proposed circuit, i.e. ability to monitor the process corner (equivalently die-to-die variations) even in the presence of within-die variations.

Keywords: detection, monitoring, process corner, process variation

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Authors: Jiangyong Liu, Xiangxiang Xu, Bote Luo, Xiaoxue Luo, Jiang Zhu, Lingzhi Yi

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To address the problems of non-linearity and high randomness of the original power load sequence causing the degradation of power load forecasting accuracy, a short-term load forecasting method is proposed. The method is based on the Least Square Support Vector Machine optimized by an Improved Sparrow Search Algorithm combined with the Variational Mode Decomposition proposed in this paper. The application of the variational mode decomposition technique decomposes the raw power load data into a series of Intrinsic Mode Functions components, which can reduce the complexity and instability of the raw data while overcoming modal confounding; the proposed improved sparrow search algorithm can solve the problem of difficult selection of learning parameters in the least Square Support Vector Machine. Finally, through comparison experiments, the results show that the method can effectively improve prediction accuracy.

Keywords: load forecasting, variational mode decomposition, improved sparrow search algorithm, least square support vector machine

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Authors: Baghdasaryan Marinka, Ulikyan Azatuhi

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The efficient usage of the compensation abilities of the electrical drive synchronous motors used in production processes can essentially improve the technical and economic indices of the process.  Reducing the flows of the reactive electrical energy due to the compensation of reactive power allows to significantly reduce the load losses of power in the electrical networks. As a result of analyzing the scientific works devoted to the issues of regulating the excitation of the synchronous motors, the need for comprehensive investigation and estimation of the excitation mode has been substantiated. By means of the obtained transmission functions, in the Simulink environment of the software package MATLAB, the transition processes of the excitation mode have been studied. As a result of obtaining and estimating the graph of the Nyquist plot and the transient process, the necessity of developing the Proportional-Integral-Derivative (PID) regulator has been justified. The transient processes of the system of the PID regulator have been investigated, and the amplitude–phase characteristics of the system have been estimated. The analysis of the obtained results has shown that the regulation indices of the developed system have been improved. The developed system can be successfully applied for regulating the excitation voltage of different-power synchronous motors, operating with a changing load, ensuring a value of the power coefficient close to 1.

Keywords: transition process, synchronous motor, excitation mode, regulator, reactive power

Procedia PDF Downloads 235

Authors: Ali Mausmi, Ahmed Abbou, Rachid El Akhrif

Abstract:

This research paper aims to reduce the chattering phenomenon due to control by sliding mode control applied on a wind energy conversion system based on the doubly fed induction generator (DFIG). Our goal is to offset the effect of parametric uncertainties and come as close as possible to the dynamic response solicited by the control law in the ideal case and therefore force the active and reactive power generated by the DFIG to accurately follow the reference values which are provided to it. The simulation results using Matlab / Simulink demonstrate the efficiency and performance of the proposed technique while maintaining the simplicity of control by first order sliding mode.

Keywords: control of speed, correction of the equivalent command, induction generator, sliding mode

Procedia PDF Downloads 377

Authors: M. Doumi, K. Tahir, A. Miloudi, A. G. Aissaoui, C. Belfedal, S. Tahir

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This paper presents a three-phase grid-connected photovoltaic generation system with unity power factor for any situation of solar radiation based on voltage-oriented control (VOC). An input voltage clamping technique is proposed to control the power between the grid and photovoltaic system, where it is intended to achieve the maximum power point operation. This method uses a Perturb and Observe (P&O) controller. The main objective of this work is to compare the energy production unit performances by the use of two types of controllers (namely, classical PI and Sliding Mode (SM) Controllers) for the grid inverter control. The proposed control has a hierarchical structure with a grid side control level to regulate the power (PQ) and the current injected to the grid and to obtain a common DC voltage constant. To show the effectiveness of both control methods performances analysis of the system are analyzed and compared by simulation and results included in this paper.

Keywords: grid connected photovoltaic, MPPT, inverter control, classical PI, sliding mode, DC voltage constant, voltage-oriented control, VOC

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Authors: Jia-Shiun Chen, Hsiu-Ying Hwang

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Hybrid electric vehicles can reduce pollution and improve fuel economy. Power-split hybrid electric vehicles (HEVs) provide two power paths between the internal combustion engine (ICE) and energy storage system (ESS) through the gears of an electrically variable transmission (EVT). EVT allows ICE to operate independently from vehicle speed all the time. Therefore, the ICE can operate in the efficient region of its characteristic brake specific fuel consumption (BSFC) map. The two-mode powertrain can operate in input-split or compound-split EVT modes and in four different fixed gear configurations. Power-split architecture is advantageous because it combines conventional series and parallel power paths. This research focuses on input-split and compound-split modes in the two-mode power-split powertrain. Fuzzy Logic Control (FLC) for an internal combustion engine (ICE) and PI control for electric machines (EMs) are derived for the urban driving cycle simulation. These control algorithms reduce vehicle fuel consumption and improve ICE efficiency while maintaining the state of charge (SOC) of the energy storage system in an efficient range.

Keywords: hybrid electric vehicle, fuel economy, two-mode hybrid, fuzzy control

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Authors: Puneet Chawla, Balwinder Singh

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Recently, increased attention has been devoted to the voltage instability phenomenon in power systems. Many techniques have been proposed in the literature for evaluating and predicting voltage stability using steady state analysis methods. In this paper, P-V and Q-V curves have been generated for a 57 bus Patiala Rajpura circle of India. The power-flow program is developed in MATLAB using Newton-Raphson method. Using Q-V curves, the weakest bus of the power system and the maximum reactive power change permissible on that bus is calculated. STATCOMs are placed on the weakest bus to improve the voltage and hence voltage stability and also the power transmission capability of the line.

Keywords: voltage stability, reactive power, power flow, weakest bus, STATCOM

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Authors: Evln Ranga Charyulu, S. P. Venu Madhavarao, S. Udaya kumar, S. V. S. S. N. V. G. Krishna Murthy

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With the advent of new nanometer process technologies, it is possible to integrate billion transistors on a single substrate. When more and more functionality included there is the possibility of multi-million transistors switching simultaneously consuming more power and dissipating more power along with more leakage of current into the substrate of porous silicon or germanium material. These results in substrate heating and thermal noise generation coupled to signals of interest. The heating process is represented by coupled nonlinear partial differential equations in porous silicon and germanium. By identifying heat sources and heat fluxes may results in designing of ultra-low power circuits. The PDEs are solved by finite difference scheme assuming that boundary layer equations in porous silicon and germanium. Local heat fluxes along the vertical isothermal surface immersed in porous SI/Ge are considered. The parameters considered for optimization are thermal diffusivity, thermal expansion coefficient, thermal diffusion ratio, permeability, specific heat at constant temperatures, Rayleigh number, amplitude of wavy surface, mass expansion coefficient. The diffusion of heat was caused by the concentration gradient. Thermal physical properties are homogeneous and isotropic. By using L8, TAGUCHI method the parameters are optimized.

Keywords: heat transfer, pde, taguchi optimization, SI/Ge

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Authors: S. Boorboor, S. A. H. Feghhi, H. Jafari

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The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 device, which is an integrated circuit including P-channel and N-channel MOS transistors, was investigated for low dose gamma irradiation under different gate bias voltages. We used linear extrapolation method to extract threshold voltage from I_D-V_G characteristic curve. The results showed that the threshold voltage shift was approximately 27.5 mV/Gy for N-channel and 3.5 mV/Gy for P-channel transistors at the gate bias of |9 V| after irradiation by Co-60 gamma ray source. Although the sensitivity of the devices under test were strongly dependent to biasing condition and transistor type, the threshold voltage shifted linearly versus accumulated dose in all cases. The overall results show that the application of CD4007 as an electronic buffer in a radiation therapy system is limited by TID damage. However, this integrated circuit can be used as a cheap and sensitive radiation dosimeter for accumulated dose measurement in radiation therapy systems.

Keywords: threshold voltage shift, MOS transistor, linear extrapolation, gamma irradiation

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Authors: Azhar Ulhaq, Zubair Yameen, Almas Anjum

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Frequency behaviour of self-excited induction generator (SEIG) wind turbines during control mode transition from grid connected to islanded mode is studied in detail. A robust control scheme for frequency regulation based on combined action of STATCOM, energy storage system (ESS) and pitch angle control for wind powered microgrid (MG) is proposed. Suggested STATCOM controller comprises a 3-phase voltage source converter (VSC) that contains insulated gate bipolar transistors (IGBTs) based pulse width modulation (PWM) inverters along with a capacitor bank. Energy storage system control consists of current controlled voltage source converter and battery bank. Both of them acting simultaneously after detection of island compensates for reactive and active power demands, thus regulating frequency at point of common coupling (PCC) and also improves load stability. STATCOM integrates at point of common coupling and ESS is connected to microgrids main bus. Results reveal that proposed control not only stabilizes frequency during transition duration but also minimizes sudden frequency imbalance caused by load variation or wind intermittencies in islanded operation. System is investigated with and without suggested control scheme. The efficacy of proposed strategy has been verified by simulation in MATLAB/Simulink.

Keywords: energy storage system, island, wind, STATCOM, self-excited induction generator, SEIG, transient

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Authors: Ching-Sung Lee, Wei-Chou Hsu, Han-Yin Liu, Hung-Hsi Huang, Si-Fu Chen, Yun-Jung Yang, Bo-Chun Chiang, Yu-Chuang Chen, Shen-Tin Yang

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AlGaN/GaN high electron mobility transistors (HEMTs) have been intensively studied due to their intrinsic advantages of high breakdown electric field, high electron saturation velocity, and excellent chemical stability. They are also suitable for ultra-violet (UV) photodetection due to the corresponding wavelengths of GaN bandgap. To improve the optical responsivity by decreasing the dark current due to gate leakage problems and limited Schottky barrier heights in GaN-based HEMT devices, various metal-oxide-semiconductor HEMTs (MOS-HEMTs) have been devised by using atomic layer deposition (ALD), molecular beam epitaxy (MBE), metal-organic chemical vapor deposition (MOCVD), liquid phase deposition (LPD), and RF sputtering. The gate dielectrics include MgO, HfO2, Al2O3, La2O3, and TiO2. In order to provide complementary circuit operation, enhancement-mode (E-mode) devices have been lately studied using techniques of fluorine treatment, p-type capper, piezoneutralization layer, and MOS-gate structure. This work reports an Al2O3-dielectric Al0.25Ga0.75N/GaN E-mode MOS-HEMT design by using a cost-effective ozone water oxidization technique. The present ozone oxidization method advantages of low cost processing facility, processing simplicity, compatibility to device fabrication, and room-temperature operation under atmospheric pressure. It can further reduce the gate-to-channel distance and improve the transocnductance (gm) gain for a specific oxide thickness, since the formation of the Al2O3 will consume part of the AlGaN barrier at the same time. The epitaxial structure of the studied devices was grown by using the MOCVD technique. On a Si substrate, the layer structures include a 3.9 m C-doped GaN buffer, a 300 nm GaN channel layer, and a 5 nm Al0.25Ga0.75N barrier layer. Mesa etching was performed to provide electrical isolation by using an inductively coupled-plasma reactive ion etcher (ICP-RIE). Ti/Al/Au were thermally evaporated and annealed to form the source and drain ohmic contacts. The device was immersed into the H2O2 solution pumped with ozone gas generated by using an OW-K2 ozone generator. Ni/Au were deposited as the gate electrode to complete device fabrication of MOS-HEMT. The formed Al2O3 oxide thickness 7 nm and the remained AlGaN barrier thickness is 2 nm. A reference HEMT device has also been fabricated in comparison on the same epitaxial structure. The gate dimensions are 1.2 × 100 µm 2 with a source-to-drain spacing of 5 μm for both devices. The dielectric constant (k) of Al2O3 was characterized to be 9.2 by using C-V measurement. Reduced interface state density after oxidization has been verified by the low-frequency noise spectra, Hooge coefficients, and pulse I-V measurement. Improved device characteristics at temperatures of 300 K-450 K have been achieved for the present MOS-HEMT design. Consequently, Al2O3-dielectric Al0.25Ga0.75N/GaN E-mode MOS-HEMTs by using the ozone water oxidization method are reported. In comparison with a conventional Schottky-gate HEMT, the MOS-HEMT design has demonstrated excellent enhancements of 138% (176%) in gm, max, 118% (139%) in IDS, max, 53% (62%) in BVGD, 3 (2)-order reduction in IG leakage at VGD = -60 V at 300 (450) K. This work is promising for millimeter-wave integrated circuit (MMIC) and three-terminal active UV photodetector applications.

Keywords: MOS-HEMT, enhancement mode, AlGaN/GaN, passivation, ozone water oxidation, gate leakage

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Authors: Biswarup Mukherjee, Aniruddha Ghoshal

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In this paper, we propose a new technique for implementing a low power high speed full adder using 8 transistors. Full adder circuits are used comprehensively in Application Specific Integrated Circuits (ASICs). Thus it is desirable to have high speed operation for the sub components. The explored method of implementation achieves a high speed low power design for the full adder. Simulated results indicate the superior performance of the proposed technique over conventional 28 transistor CMOS full adder. Detailed comparison of simulated results for the conventional and present method of implementation is presented.

Keywords: high speed low power full adder, 2-T MUX, 3-T XOR, 8-T FA, pass transistor logic, CMOS (complementary metal oxide semiconductor)

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Authors: Mohd Sabri Minhat, Nurul Adilla Mohd Subha

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The PUSPATI TRIGA Reactor (RTP), Malaysia reached its first criticality on June 28, 1982, with power capacity 1MW thermal. The Feedback Control Algorithm (FCA) which is conventional Proportional-Integral (PI) controller, was used for present power control method to control fission process in RTP. It is important to ensure the core power always stable and follows load tracking within acceptable steady-state error and minimum settling time to reach steady-state power. At this time, the system could be considered not well-posed with power tracking performance. However, there is still potential to improve current performance by developing next generation of a novel design nuclear core power control. In this paper, the dual-mode predictions which are proposed in modelling Optimal Model Predictive Control (OMPC), is presented in a state-space model to control the core power. The model for core power control was based on mathematical models of the reactor core, OMPC, and control rods selection algorithm. The mathematical models of the reactor core were based on neutronic models, thermal hydraulic models, and reactivity models. The dual-mode prediction in OMPC for transient and terminal modes was based on the implementation of a Linear Quadratic Regulator (LQR) in designing the core power control. The combination of dual-mode prediction and Lyapunov which deal with summations in cost function over an infinite horizon is intended to eliminate some of the fundamental weaknesses related to MPC. This paper shows the behaviour of OMPC to deal with tracking, regulation problem, disturbance rejection and caters for parameter uncertainty. The comparison of both tracking and regulating performance is analysed between the conventional controller and OMPC by numerical simulations. In conclusion, the proposed OMPC has shown significant performance in load tracking and regulating core power for nuclear reactor with guarantee stabilising in the closed-loop.

Keywords: core power control, dual-mode prediction, load tracking, optimal model predictive control

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Authors: Zakarya Kourdi, Mohammed Khaouani, Benyounes Bouazza, Ahlam Guen-Bouazza, Amine Boursali

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In this paper, we have evaluated the thermal effect for high electron mobility transistors (HEMTs) heterostructure InAlN/GaN with a gate length 30nm high-performance. It also shows the analysis and simulated these devices, and how can be used in different application. The simulator Tcad-Silvaco software has used for predictive results good for the DC, AC and RF characteristic, Devices offered max drain current 0.67A; transconductance is 720 mS/mm the unilateral power gain of 180 dB. A cutoff frequency of 385 GHz, and max frequency 810 GHz These results confirm the feasibility of using HEMTs with InAlN/GaN in high power amplifiers, as well as thermal places.

Keywords: HEMT, Thermal Effect, Silvaco, InAlN/GaN

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Authors: Reza Sirjani, Nobosse Tafem Bolan

Abstract:

Many optimization techniques available in the literature have been developed in order to solve the problem of voltage stability enhancement in power systems. However, there are a number of drawbacks in the use of previous techniques aimed at determining the optimal location and size of reactive compensators in a network. In this paper, an Improved Cuckoo Search algorithm is applied as an appropriate optimization algorithm to determine the optimum location and size of a Static Var Compensator (SVC) in a transmission network. The main objectives are voltage stability improvement and total cost minimization. The results of the presented technique are then compared with other available optimization techniques.

Keywords: cuckoo search algorithm, optimization, power system, var compensators, voltage stability

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Authors: Yanrong Song, Zikai Dong, Runqin Xu, Jinrong Tian, Kexuan Li

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Nonlinear polarization rotation (NPR) technique has become one of the main techniques to achieve mode-locked fiber lasers for its compactness, implementation, and low cost. In this paper, we demonstrate a compact mode-locked Yb-doped fiber laser based on NPR technique in the all normal dispersion (ANDi) regime. In the laser cavity, there are no physical filter and polarization controller in laser cavity. Mode-locked pulse train is achieved in ANDi regime based on NPR technique. The fiber birefringence induced filtering effect is the mainly reason for mode-locking. After that, an extra 20 m long single-mode fiber is inserted in two different positions, dissipative soliton operation and noise like pulse operations are achieved correspondingly. The nonlinear effect is obviously enhanced in the noise like pulse regime and broadband spectrum generated owing to enhanced stimulated Raman scattering effect. When the pump power is 210 mW, the central wavelength is 1030 nm, and the corresponding 1st order Raman scattering stokes wave generates and locates at 1075 nm. When the pump power is 370 mW, the 1st and 2nd order Raman scattering stokes wave generate and locate at 1080 nm, 1126 nm respectively. When the pump power is 600 mW, the Raman continuum is generated with cascaded multi-order stokes waves, and the spectrum extends to 1188 nm. The total flat spectrum is from 1000nm to 1200nm. The maximum output average power and pulse energy are 18.0W and 14.75nJ, respectively.

Keywords: fiber laser, mode-locking, nonlinear polarization rotation, Raman scattering

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Authors: R. Z. R. R. Rosdin, N. M. Ali, S. W. Harun, H. Arof

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We have experimentally demonstrated bright-dark pulses in a nonlinear polarization rotation (NPR) based mode-locked Erbium-doped fiber laser (EDFL) with a long cavity configuration. Bright–dark pulses could be achieved when the laser works in the passively mode-locking regime and the net group velocity dispersion is quite anomalous. The EDFL starts to generate a bright pulse train with degenerated dark pulse at the mode-locking threshold pump power of 35.09 mW by manipulating the polarization states of the laser oscillation modes using a polarization controller (PC). A split bright–dark pulse is generated when further increasing the pump power up to 37.95 mW. Stable bright pulses with no obvious evidence of a dark pulse can also be generated when further adjusting PC and increasing the pump power up to 52.19 mW. At higher pump power of 54.96 mW, a new form of bright-dark pulse emission was successfully identified with the repetition rate of 29 kHz. The bright and dark pulses have a duration of 795.5 ns and 640 ns, respectively.

Keywords: Erbium-doped fiber laser, nonlinear polarization rotation, bright-dark pulse, photonic

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Authors: Kyoungwoon Kim, Cuong Huynh, Cam Nguyen

Abstract:

Exploding demands for more data, faster data transmission speed, less interference, more users, more wireless devices, and better reliable service-far exceeding those provided in the current mobile communications networks in the RF spectrum below 6 GHz-has led the wireless communication industry to focus on higher, previously unallocated spectrums. High frequencies in RF spectrum near (around 28 GHz) or within the millimeter-wave regime is the logical solution to meet these demands. This high-frequency RF spectrum is of increasingly important for wireless communications due to its large available bandwidths that facilitate various applications requiring large-data high-speed transmissions, reaching up to multi-gigabit per second, of vast information. It also resolves the traffic congestion problems of signals from many wireless devices operating in the current RF spectrum (below 6 GHz), hence handling more traffic. Consequently, the wireless communication industries are moving towards 5G (fifth generation) for next-generation communications such as mobile phones, autonomous vehicles, virtual reality, and the Internet of Things (IoT). The U.S. Federal Communications Commission (FCC) proved on 14th July 2016 three frequency bands for 5G around 28, 37 and 39 GHz. We present some silicon-based RFIC power amplifiers (PA) for possible implementation for 5G wireless communications around 28, 37 and 39 GHz. The 16.5-28 GHz PA exhibits measured gain of more than 34.5 dB and very flat output power of 19.4±1.2 dBm across 16.5-28 GHz. The 25.5/37-GHz PA exhibits gain of 21.4 and 17 dB, and maximum output power of 16 and 13 dBm at 25.5 and 37 GHz, respectively, in the single-band mode. In the dual-band mode, the maximum output power is 13 and 9.5 dBm at 25.5 and 37 GHz, respectively. The 10-19/23-29/33-40 GHz PA has maximum output powers of 15, 13.3, and 13.8 dBm at 15, 25, and 35 GHz, respectively, in the single-band mode. When this PA is operated in dual-band mode, it has maximum output powers of 11.4/8.2 dBm at 15/25 GHz, 13.3/3 dBm at 15/35 GHz, and 8.7/6.7 dBm at 25/35 GHz. In the tri-band mode, it exhibits 8.8/5.4/3.8 dBm maximum output power at 15/25/35 GHz. Acknowledgement: This paper was made possible by NPRP grant # 6-241-2-102 from the Qatar National Research Fund (a member of Qatar Foundation). The statements made herein are solely the responsibility of the authors

Keywords: Microwaves, Millimeter waves, Power Amplifier, Wireless communications

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Authors: Guo-Ming Sung, Ramavath Naga Raju Naik

Abstract:

This paper presents a low power, high speed, sense-amplifier based flip-flop (SAFF). The flip-flop’s power con-sumption and delay are greatly reduced by employing a new conditionally precharge sense-amplifier stage and a single-ended latch stage. Glitch-free and contention-free latch operation is achieved by using a conditional cut-off strategy. The design uses fewer transistors, has a lower clock load, and has a simple structure, all of which contribute to a near-zero setup time. When compared to previous flip-flop structures proposed for similar input/output conditions, this design’s performance and overall PDP have improved. The post layout simulation of the circuit uses 2.91µW of power and has a delay of 65.82 ps. Overall, the power-delay product has seen some enhancements. Cadence Virtuoso Designing tool with CMOS 90nm technology are used for all designs.

Keywords: high-speed, low-power, flip-flop, sense-amplifier

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Authors: Pavel Baroch, Jiri Rezek, Michal Prochazka, Tomas Kozak, Jiri Houska

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Transparent semiconducting amorphous IGZO films have attracted great attention due to their excellent electrical properties and possible utilization in thin film transistors or in photovoltaic applications as they show 20-50 times higher mobility than that of amorphous silicon. It is also known that the properties of IGZO films are highly sensitive to process parameters, especially to oxygen partial pressure. In this study we have focused on the comparison of properties of transparent semiconducting amorphous indium gallium zinc oxide (IGZO) thin films prepared by conventional sputtering methods and those prepared by high power impulse magnetron sputtering (HiPIMS) method. Furthermore we tried to optimize electrical and optical properties of the IGZO thin films and to investigate possibility to apply these coatings on thermally sensitive flexible substrates. We employed dc, pulsed dc, mid frequency sine wave and HiPIMS power supplies for magnetron deposition. Magnetrons were equipped with sintered ceramic InGaZnO targets. As oxygen vacancies are considered to be the main source of the carriers in IGZO films, it is expected that with the increase of oxygen partial pressure number of oxygen vacancies decreases which results in the increase of film resistivity. Therefore in all experiments we focused on the effect of oxygen partial pressure, discharge power and pulsed power mode on the electrical, optical and mechanical properties of IGZO thin films and also on the thermal load deposited to the substrate. As expected, we have observed a very fast transition between low- and high-resistivity films depending on oxygen partial pressure when deposition using conventional sputtering methods/power supplies have been utilized. Therefore we established and utilized HiPIMS sputtering system for enlargement of operation window for better control of IGZO thin film properties. It is shown that with this system we are able to effectively eliminate steep transition between low and high resistivity films exhibited by DC mode of sputtering and the electrical resistivity can be effectively controlled in the wide resistivity range of 10-² to 10⁵ Ω.cm. The highest mobility of charge carriers (up to 50 cm2/V.s) was obtained at very low oxygen partial pressures. Utilization of HiPIMS also led to significant decrease in thermal load deposited to the substrate which is beneficial for deposition on the thermally sensitive and flexible polymer substrates. Deposition rate as a function of discharge power and oxygen partial pressure was also systematically investigated and the results from optical, electrical and structure analysis will be discussed in detail. Most important result which we have obtained demonstrates almost linear control of IGZO thin films resistivity with increasing of oxygen partial pressure utilizing HiPIMS mode of sputtering and highly transparent films with low resistivity were prepared already at low pO2. It was also found that utilization of HiPIMS technique resulted in significant improvement of surface smoothness in reactive mode of sputtering (with increasing of oxygen partial pressure).

Keywords: charge carrier mobility, HiPIMS, IGZO, resistivity

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Authors: Jon Cobb, Nasir

Abstract:

Due to higher switching frequencies, the conducted Electromagnetic interference (EMI) noise is generated in a converter. It degrades the performance of a switching converter. Therefore, it is an essential requirement to mitigate EMI noise of high performance converter. Moreover, it includes two types of emission such as common mode (CM) and differential mode (DM) noise. CM noise is due to parasitic capacitance present in a converter and DM noise is caused by switching current. However, there is dire need to understand the main cause of EMI noise. Hence, we propose a novel method to predict conducted EMI noise of different converter topologies during early stage. This paper also presents the comparison of conducted electromagnetic interference (EMI) noise due to different SMPS topologies. We also make an attempt to develop an EMI noise model for a converter which allows detailed performance analysis. The proposed method is applied to different converter, as an example, and experimental results are verified the novel prediction technique.

Keywords: EMI, electromagnetic interference, SMPS, switch-mode power supply, common mode, CM, differential mode, DM, noise

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Authors: Ravi Kiran Jaladi, Ezz I. El-Masry

Abstract:

Emerging technologies such as ultra-wide band wireless access technology that operate at ultra-low power present several challenges due to their inherent design that limits the use of voltage-mode filters. Therefore, Continuous-time current-mode (CTCM) filters have become very popular in recent times due to the fact they have a wider dynamic range, improved linearity, and extended bandwidth compared to their voltage-mode counterparts. The goal of this research is to develop analog filters which are suitable for the current scaling CMOS technologies. Bulk-driven MOSFET is one of the most popular low power design technique for the existing challenges, while other techniques have obvious shortcomings. In this work, a CTCM Gate-driven (GD) differentiator has been presented with a frequency range from dc to 100MHz which operates at very low supply voltage of 0.7 volts. A novel CTCM Bulk-driven (BD) differentiator has been designed for the first time which reduces the power consumption multiple times that of GD differentiator. These GD and BD differentiator has been simulated using CADENCE TSMC 65nm technology for all the bilinear and biquadratic band-pass frequency responses. These basic building blocks can be used to implement the higher order filters. A 6th order cascade CTCM Chebyshev band-pass filter has been designed using the GD and BD techniques. As a conclusion, a low power GD and BD 6th order chebyshev stagger-tuned band-pass filter was simulated and all the parameters obtained from all the resulting realizations are analyzed and compared. Monte Carlo analysis is performed for both the 6th order filters and the results of sensitivity analysis are presented.

Keywords: bulk-driven (BD), continuous-time current-mode filters (CTCM), gate-driven (GD)

Procedia PDF Downloads 260

Authors: Sangeeta Singh, Pankaj Kumar, P. N. Kondekar

Abstract:

In this paper, the transient device performance analysis of n-type Gate Inside Junctionless Transistor (GIJLT)has been evaluated. 3-D Bohm Quantum Potential (BQP)transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay product, intrinsic gate delay and energy delay product as compared to Gate-all-around transistors GAA-JLT. In addition to this, various other device performance parameters namely, on/off current ratio, short channel effects (SCE), transconductance Generation Factor(TGF) and unity gain cut-off frequency (fT) and subthreshold slope (SS) of the GI-JLT and Gate-all-around junctionless transistor(GAA-JLT) have been analyzed and compared. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation.

Keywords: gate-inside junctionless transistor GI-JLT, gate-all-around junctionless transistor GAA-JLT, propagation delay, power delay product

Procedia PDF Downloads 579

Authors: E. Bounadja, M. O. Mahmoudi, A. Djahbar, Z. Boudjema

Abstract:

This paper presents a control approach of the doubly fed induction generator (DFIG) in conjunction with a direct AC-AC matrix converter used in generating mode. This device is intended to be implemented in a variable speed wind energy conversion system connected to the grid. Firstly, we developed a model of matrix converter, controlled by the Venturini modulation technique. In order to control the power exchanged between the stator of the DFIG and the grid, a control law is synthesized using a high order sliding mode controller. The use of this method provides very satisfactory performance for the DFIG control. The overall strategy has been validated on a 2-MW wind turbine driven a DFIG using the Matlab/Simulink.

Keywords: doubly fed induction generator (DFIG), matrix converter, high-order sliding mode controller, wind energy

Procedia PDF Downloads 523

Authors: K. Jithendra Gowd, Ch. Sai Babu, S. Sivanagaraju

Abstract:

Electric power systems are daily exposed to service interruption mainly due to faults and human accidental interference. Short circuit currents are responsible for several types of disturbances in power systems. The fault currents are high and the voltages are reduced at the time of fault. This paper presents two suitable methods, consideration of fault resistance and Distributed Generator are implemented and analyzed for the enhancement of voltage profile during fault conditions. Fault resistance is a critical parameter of electric power systems operation due to its stochastic nature. If not considered, this parameter may interfere in fault analysis studies and protection scheme efficiency. The effect of Distributed Generator is also considered. The proposed methods are tested on the IEEE 37 bus test systems and the results are compared.

Keywords: distributed generation, electrical distribution systems, fault resistance

Procedia PDF Downloads 516