Search results for: wide band gap semiconductor
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 4342

Search results for: wide band gap semiconductor

4072 Comparative Study of Al₂O₃ and HfO₂ as Gate Dielectric on AlGaN/GaN Metal Oxide Semiconductor High-Electron Mobility Transistors

Authors: Kaivan Karami, Sahalu Hassan, Sanna Taking, Afesome Ofiare, Aniket Dhongde, Abdullah Al-Khalidi, Edward Wasige

Abstract:

We have made a comparative study on the influence of Al₂O₃ and HfO₂ grown using atomic layer deposition (ALD) technique as dielectric in the AlGaN/GaN metal oxide semiconductor high electron mobility transistor (MOS-HEMT) structure. Five samples consisting of 20 nm and 10 nm each of Al₂O₃ and HfO₂ respectively and a Schottky gate HEMT, were fabricated and measured. The threshold voltage shifts towards negative by 0.1 V and 1.8 V for 10 nm thick HfO2 and 10 nm thick Al₂O₃ gate dielectric layers respectively. The negative shift for the 20 nm HfO2 and 20 nm Al₂O₃ were 1.2 V and 4.9 V respectively. Higher gm/IDS (transconductance to drain current) ratio was also obtained in HfO₂ than Al₂O₃. With both materials as dielectric, a significant reduction in the gate leakage current in the order of 10^4 was obtained compared to the sample without the dielectric material.

Keywords: AlGaN/GaN HEMTs, Al2O3, HfO2, MOSHEMTs.

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4071 An Exploration on Competency-Based Curricula in Integrated Circuit Design

Authors: Chih Chin Yang, Chung Shan Sun

Abstract:

In this paper, the relationships between professional competences and school curricula in IC design industry are explored. The semi-structured questionnaire survey and focus group interview is the research method. Study participants are graduates of microelectronics engineering professional departments who are currently employed in the IC industry. The IC industries are defined as the electronic component manufacturing industry and optical-electronic component manufacturing industry in the semiconductor industry and optical-electronic material devices, respectively. Study participants selected from IC design industry include IC engineering and electronic & semiconductor engineering. The human training with IC design professional competence in microelectronics engineering professional departments is explored in this research. IC professional competences of human resources in the IC design industry include general intelligence and professional intelligence.

Keywords: IC design, curricula, competence, task, duty

Procedia PDF Downloads 385
4070 A Subband BSS Structure with Reduced Complexity and Fast Convergence

Authors: Salah Al-Din I. Badran, Samad Ahmadi, Ismail Shahin

Abstract:

A blind source separation method is proposed; in this method, we use a non-uniform filter bank and a novel normalisation. This method provides a reduced computational complexity and increased convergence speed comparing to the full-band algorithm. Recently, adaptive sub-band scheme has been recommended to solve two problems: reduction of computational complexity and increase the convergence speed of the adaptive algorithm for correlated input signals. In this work, the reduction in computational complexity is achieved with the use of adaptive filters of orders less than the full-band adaptive filters, which operate at a sampling rate lower than the sampling rate of the input signal. The decomposed signals by analysis bank filter are less correlated in each subband than the input signal at full bandwidth, and can promote better rates of convergence.

Keywords: blind source separation, computational complexity, subband, convergence speed, mixture

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4069 Artificial Neural Network Approach for Vessel Detection Using Visible Infrared Imaging Radiometer Suite Day/Night Band

Authors: Takashi Yamaguchi, Ichio Asanuma, Jong G. Park, Kenneth J. Mackin, John Mittleman

Abstract:

In this paper, vessel detection using the artificial neural network is proposed in order to automatically construct the vessel detection model from the satellite imagery of day/night band (DNB) in visible infrared in the products of Imaging Radiometer Suite (VIIRS) on Suomi National Polar-orbiting Partnership (Suomi-NPP).The goal of our research is the establishment of vessel detection method using the satellite imagery of DNB in order to monitor the change of vessel activity over the wide region. The temporal vessel monitoring is very important to detect the events and understand the circumstances within the maritime environment. For the vessel locating and detection techniques, Automatic Identification System (AIS) and remote sensing using Synthetic aperture radar (SAR) imagery have been researched. However, each data has some lack of information due to uncertain operation or limitation of continuous observation. Therefore, the fusion of effective data and methods is important to monitor the maritime environment for the future. DNB is one of the effective data to detect the small vessels such as fishery ships that is difficult to observe in AIS. DNB is the satellite sensor data of VIIRS on Suomi-NPP. In contrast to SAR images, DNB images are moderate resolution and gave influence to the cloud but can observe the same regions in each day. DNB sensor can observe the lights produced from various artifact such as vehicles and buildings in the night and can detect the small vessels from the fishing light on the open water. However, the modeling of vessel detection using DNB is very difficult since complex atmosphere and lunar condition should be considered due to the strong influence of lunar reflection from cloud on DNB. Therefore, artificial neural network was applied to learn the vessel detection model. For the feature of vessel detection, Brightness Temperature at the 3.7 μm (BT3.7) was additionally used because BT3.7 can be used for the parameter of atmospheric conditions.

Keywords: artificial neural network, day/night band, remote sensing, Suomi National Polar-orbiting Partnership, vessel detection, Visible Infrared Imaging Radiometer Suite

Procedia PDF Downloads 239
4068 Numerical Simulation of Flow and Heat Transfer Characteristics with Various Working Conditions inside a Reactor of Wet Scrubber

Authors: Jonghyuk Yoon, Hyoungwoon Song, Youngbae Kim, Eunju Kim

Abstract:

Recently, with the rapid growth of semiconductor industry, lots of interests have been focused on after treatment system that remove the polluted gas produced from semiconductor manufacturing process, and a wet scrubber is the one of the widely used system. When it comes to mechanism of removing the gas, the polluted gas is removed firstly by chemical reaction in a reactor part. After that, the polluted gas stream is brought into contact with the scrubbing liquid, by spraying it with the liquid. Effective design of the reactor part inside the wet scrubber is highly important since removal performance of the polluted gas in the reactor plays an important role in overall performance and stability. In the present study, a CFD (Computational Fluid Dynamics) analysis was performed to figure out the thermal and flow characteristics inside unit a reactor of wet scrubber. In order to verify the numerical result, temperature distribution of the numerical result at various monitoring points was compared to the experimental result. The average error rates (12~15%) between them was shown and the numerical result of temperature distribution was in good agreement with the experimental data. By using validated numerical method, the effect of the reactor geometry on heat transfer rate was also taken into consideration. Uniformity of temperature distribution was improved about 15%. Overall, the result of present study could be useful information to identify the fluid behavior and thermal performance for various scrubber systems. This project is supported by the ‘R&D Center for the reduction of Non-CO₂ Greenhouse gases (RE201706054)’ funded by the Korea Ministry of Environment (MOE) as the Global Top Environment R&D Program.

Keywords: semiconductor, polluted gas, CFD (Computational Fluid Dynamics), wet scrubber, reactor

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4067 Reliability Modeling of Repairable Subsystems in Semiconductor Fabrication: A Virtual Age and General Repair Framework

Authors: Keshav Dubey, Swajeeth Panchangam, Arun Rajendran, Swarnim Gupta

Abstract:

In the semiconductor capital equipment industry, effective modeling of repairable system reliability is crucial for optimizing maintenance strategies and ensuring operational efficiency. However, repairable system reliability modeling using a renewal process is not as popular in the semiconductor equipment industry as it is in the locomotive and automotive industries. Utilization of this approach will help optimize maintenance practices. This paper presents a structured framework that leverages both parametric and non-parametric approaches to model the reliability of repairable subsystems based on operational data, maintenance schedules, and system-specific conditions. Data is organized at the equipment ID level, facilitating trend testing to uncover failure patterns and system degradation over time. For non-parametric modeling, the Mean Cumulative Function (Mean Cumulative Function) approach is applied, offering a flexible method to estimate the cumulative number of failures over time without assuming an underlying statistical distribution. This allows for empirical insights into subsystem failure behavior based on historical data. On the parametric side, virtual age modeling, along with Homogeneous and Non-Homogeneous Poisson Process (Homogeneous Poisson Process and Non-Homogeneous Poisson Process) models, is employed to quantify the effect of repairs and the aging process on subsystem reliability. These models allow for a more structured analysis by characterizing repair effectiveness and system wear-out trends over time. A comparison of various Generalized Renewal Process (GRP) approaches highlights their utility in modeling different repair effectiveness scenarios. These approaches provide a robust framework for assessing the impact of maintenance actions on system performance and reliability. By integrating both parametric and non-parametric methods, this framework offers a comprehensive toolset for reliability engineers to better understand equipment behavior, assess the effectiveness of maintenance activities, and make data-driven decisions that enhance system availability and operational performance in semiconductor fabrication facilities.

Keywords: reliability, maintainability, homegenous poission process, repairable system

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4066 Long Wavelength GaInNAs Based Hot Electron Light Emission VCSOAs

Authors: Faten Adel Ismael Chaqmaqchee

Abstract:

Optical, electrical and optical-electrical characterisations of surface light emitting VCSOAs devices are reported. The hot electron light emitting and lasing in semiconductor hetero-structure vertical cavity semiconductor optical amplifier (HELLISH VCSOA) device is a surface emitter based on longitudinal injection of electron and hole pairs in their respective channels. Ga0.35In0.65N0.02As0.08/GaAs was used as an active material for operation in the 1.3 μm window of the optical communications. The device has undoped Distributed Bragg Reflectors (DBRs) and the current is injected longitudinally, directly into the active layers and does not involve DBRs. Therefore, problems associated with refractive index contrast and current injection through the DBR layers, which are common with the doped DBRs in conventional VCSOAs, are avoided. The highest gain of around 4 dB is obtained for the 1300 nm wavelength operation.

Keywords: HELLISH, VCSOA, GaInNAs, luminescence, gain

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4065 Progression Rate, Prevalence, Incidence of Black Band Disease on Stony (Scleractinia) in Barranglompo Island, South Sulawesi

Authors: Baso Hamdani, Arniati Massinai, Jamaluddin Jompa

Abstract:

Coral diseases are one of the factors affect reef degradation. This research had analysed the progression rate, incidence, and prevalence of Black Band Disease (BBD) on stony coral (Pachyseris sp.) in relation to the environmental parameters (pH, nitrate, phospate, Dissolved Organic Matter (DOM), and turbidity). The incidence of coral disease was measured weekly for 6 weeks using Belt Transect Method. The progression rate of BBD was measured manually. Furthermore, the prevalence and incidence of BBD were calculated each colonies infected. The relationship between environmental parameters and the progression rate, prevalence and incidence of BBD was analysed by Principal Component Analysis (PCA). The results showed the average of progression rate is 0,07 ± 0,02 cm/ hari. The prevalence of BBD increased from 0,92% - 19,73% in 7 weeks observation with the average incidence of new infected colonies coral 0,2 - 0,65 colony/day The environment factors which important were pH, Nitrate, Phospate, DOM, and Turbidity.

Keywords: progression rate, incidence, prevalence, Black Band Disease, Barranglompo

Procedia PDF Downloads 649
4064 Model Predictive Control Using Thermal Inputs for Crystal Growth Dynamics

Authors: Takashi Shimizu, Tomoaki Hashimoto

Abstract:

Recently, crystal growth technologies have made progress by the requirement for the high quality of crystal materials. To control the crystal growth dynamics actively by external forces is useuful for reducing composition non-uniformity. In this study, a control method based on model predictive control using thermal inputs is proposed for crystal growth dynamics of semiconductor materials. The control system of crystal growth dynamics considered here is governed by the continuity, momentum, energy, and mass transport equations. To establish the control method for such thermal fluid systems, we adopt model predictive control known as a kind of optimal feedback control in which the control performance over a finite future is optimized with a performance index that has a moving initial time and terminal time. The objective of this study is to establish a model predictive control method for crystal growth dynamics of semiconductor materials.

Keywords: model predictive control, optimal control, process control, crystal growth

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4063 Development of Noninvasive Method to Analyze Dynamic Changes of Matrix Stiffness and Elasticity Characteristics

Authors: Elena Petersen, Inna Kornienko, Svetlana Guryeva, Sergey Dobdin, Anatoly Skripal, Andrey Usanov, Dmitry Usanov

Abstract:

One of the most important unsolved problems in modern medicine is the increase of chronic diseases that lead to organ dysfunction or even complete loss of function. Current methods of treatment do not result in decreased mortality and disability statistics. Currently, the best treatment for many patients is still transplantation of organs and/or tissues. Therefore, finding a way of correct artificial matrix biofabrication in case of limited number of natural organs for transplantation is a critical task. One important problem that needs to be solved is development of a nondestructive and noninvasive method to analyze dynamic changes of mechanical characteristics of a matrix with minimal side effects on the growing cells. This research was focused on investigating the properties of matrix as a marker of graft condition. In this study, the collagen gel with human primary dermal fibroblasts in suspension (60, 120, 240*103 cells/mL) and collagen gel with cell spheroids were used as model objects. The stiffness and elasticity characteristics were evaluated by a semiconductor laser autodyne. The time and cell concentration dependency of the stiffness and elasticity were investigated. It was shown that these properties changed in a non-linear manner with respect to cell concentration. The maximum matrix stiffness was observed in the collagen gel with the cell concentration of 120*103 cells/mL. This study proved the opportunity to use the mechanical properties of matrix as a marker of graft condition, which can be measured by noninvasive semiconductor laser autodyne technique.

Keywords: graft, matrix, noninvasive method, regenerative medicine, semiconductor laser autodyne

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4062 Investigation of Utilizing L-Band Horn Antenna in Landmine Detection

Authors: Ahmad H. Abdelgwad, Ahmed A. Nashat

Abstract:

Landmine detection is an important and yet challenging problem remains to be solved. Ground Penetrating Radar (GPR) is a powerful and rapidly maturing technology for subsurface threat identification. The detection methodology of GPR depends mainly on the contrast of the dielectric properties of the searched target and its surrounding soil. This contrast produces a partial reflection of the electromagnetic pulses that are being transmitted into the soil and then being collected by the GPR.  One of the most critical hardware components for the performance of GPR is the antenna system. The current paper explores the design and simulation of a pyramidal horn antenna operating at L-band frequencies (1- 2 GHz) to detect a landmine. A prototype model of the GPR system setup is developed to simulate full wave analysis of the electromagnetic fields in different soil types. The contrast in the dielectric permittivity of the landmine and the sandy soil is the most important parameter to be considered for detecting the presence of landmine. L-band horn antenna is proved to be well-versed in the investigation of landmine detection.

Keywords: full wave analysis, ground penetrating radar, horn antenna design, landmine detection

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4061 Excitation and Active Control of Charge Density Waves at Degenerately Doped PN++ Junctions

Authors: R. K. Vinnakota, D. A. Genov, Z. Dong, A. F. Briggs, L. Nordin, S. R. Bank, D. Wasserman

Abstract:

We present a semiconductor-based plasmonic electro-optic modulator based on excitation and active control of surface plasmon polaritons (SPPs) at the interface of degenerately doped In₀.₅₃Ga₀.₄₇As pn++ junctions. Set of devices, which we refer to as a surface plasmon polariton diode (SPPD), are fabricated and characterized electrically and optically. Optical characterization predicts far-field voltage-aided reflectivity modulation for mid-IR wavelengths. Numerical device characterizations using a self-consistent electro-optic multiphysics model have been performed to confirm the experimental findings were predicting data rates up to 1Gbits/s and 3dB bandwidth as high as 2GHz. Our findings also show that decreasing the device dimensions can potentially lead to data rates of more than 50Gbits/s, thus potentially providing a pathway toward fast all-semiconductor-based plasmotronic devices.

Keywords: plasmonics, optoelectronics, PN junctions, surface plasmon polaritons

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4060 Design of Multiband Microstrip Antenna Using Stepped Cut Method for WLAN/WiMAX and C/Ku-Band Applications

Authors: Ahmed Boutejdar, Bishoy I. Halim, Soumia El Hani, Larbi Bellarbi, Amal Afyf

Abstract:

In this paper, a planar monopole antenna for multi band applications is proposed. The antenna structure operates at three operating frequencies at 3.7, 6.2, and 13.5 GHz which cover different communication frequency ranges. The antenna consists of a quasi-modified rectangular radiating patch with a partial ground plane and two parasitic elements (open-loop-ring resonators) to serve as coupling-bridges. A stepped cut at lower corners of the radiating patch and the partial ground plane are used, to achieve the multiband features. The proposed antenna is manufactured on the FR4 substrate and is simulated and optimized using High Frequency Simulation System (HFSS). The antenna topology possesses an area of 30.5 x 30 x 1.6 mm3. The measured results demonstrate that the candidate antenna has impedance bandwidths for 10 dB return loss and operates from 3.80 – 3.90 GHz, 4.10 – 5.20 GHz, 11.2 – 11.5 GHz and from 12.5 – 14.0 GHz, which meet the requirements of the wireless local area network (WLAN), worldwide interoperability for microwave access (WiMAX), C- (Uplink) and Ku- (Uplink) band applications. Acceptable agreement is obtained between measurement and simulation results. Experimental results show that the antenna is successfully simulated and measured, and the tri-band antenna can be achieved by adjusting the lengths of the three elements and it gives good gains across all the operation bands.

Keywords: planar monopole antenna, FR4 substrate, HFSS, WLAN, WiMAX, C and Ku

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4059 Effect of Ti+ Irradiation on the Photoluminescence of TiO2 Nanofibers

Authors: L. Chetibi, D. Hamana, T. O. Busko, M. P. Kulish, S. Achour

Abstract:

TiO2 nanostructures have attracted much attention due to their optical, dielectric and photocatalytic properties as well as applications including optical coating, photocatalysis and photoelectrochemical solar cells. This work aims to prepare TiO2 nanofibers (NFs) on titanium substrate (Ti) by in situ oxidation of Ti foils in a mixture solution of concentrated H2O2 and NaOH followed by proton exchange and calcinations. Scanning Electron microscopy (SEM) revealed an obvious network of TiO2 nanofibers. The photoluminescence (PL) spectra of these nanostructures revealed a broad intense band in the visible light range with a reduced near edge band emission. The PL bands in the visible region, mainly, results from surface oxygen vacancies and others defects. After irradiation with Ti+ ions (the irradiation energy was E = 140 keV with doses of 1013 ions/cm2), the intensity of the PL spectrum decreased as a consequence of the radiation treatment. The irradiation with Ti+ leads to a reduction of defects and generation of non irradiative defects near to the level of the conduction band as evidenced by the PL results. On the other hand, reducing the surface defects on TiO2 nanostructures may improve photocatalytic and optoelectronic properties of this nanostructure.

Keywords: TiO2, nanofibers, photoluminescence, irradiation

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4058 Step into the Escalator’s Fractal Behavior by Using the Poincare Map

Authors: Ali Albadri

Abstract:

Step band in an escalator moves in a cyclic periodic pattern. Similarly, most if not all of the components and sub-assemblies in the escalator operate in the same way. If you mark up one step in the step band of an escalator and stand next to the escalator, on the incline, to watch the marked-up step when it passes by, you ask yourself, does the marked up step behaves exactly the same way during each revolution when it passes you by again and again? We can say that; there is some similarity in this example and the example when an astronomer watches planets in the sky, and he or she asks himself or herself, does each planet intersects the plan of observation in the same position for every pantry rotation? For a fact, we know for the answer to the second example is no, because scientist, astronomers, and mathematicians have proven that planets deviate from their paths to take new paths during their planetary moves, albeit with minimal change. But what about the answer to the question in the first example? considering that there is increase in the wear and tear of components with time in the step, in the step band, in the tracks and in many other places in the escalator. There is also the accumulation of fatigue in the components and sub-assemblies. This research is part of many studies which we are conducting to address the answer for the question in the first example. We have been using the fractal dimension as a quantities tool and the Poincare map as a qualitative tool. This study has shown that the fractal dimension value and the shape and distribution of the orbits in the Poincare map has significant correlation with the quality of the mechanical components and sub-assemblies in the escalator.

Keywords: fractal dimension, Poincare map, rugby ball orbit, worm orbit

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4057 Muscle Activation Comparisons in a Lat Pull down Exercise with Machine Weights, Resistance Bands and Body Weight Exercises

Authors: Trevor R. Higgins

Abstract:

The aim of this study was to compare muscle activation of the latissimus dorsi between pin-loaded machine (Lat Pull Down), resistance band (Lat Pull Down) and body-weight (Chin Up) exercises. A convenient sample of male college students with >2 years resistance training experience volunteered for the study. A paired t-test with repeated measures designs was carried out on results from EMG analysis. EMG analysis was conducted with Trigno wireless sensors (Delsys) placed laterally on the latissimus dorsi (left and right) of each participant. By conventional criteria the two-tailed P value suggested that differences between pin-loaded and body-weight was not significantly different (p = 0.93) and differences between pin-loaded and resistance band was not significantly different (p = 0.17) in muscle activity. In relation to conventional criteria the two-tailed P value suggested differences between body-weight and resistance band was not quite significantly different (p = 0.06) in muscle activity. However, effect size trends indicated that both body-weight and pin-loaded exercises where more effective in stimulating muscle electrical activity than a resistance band with male college athletes with >2 years resistance training experience. Although, resistance bands have increased in popularity in health and fitness centres, that for well-trained participants, they may not be effective in stimulating muscles of the latissimus dorsi. Therefore, when considering equipment and exercise selection for experienced resistance training participants pin-loaded machines and body-weight should be prescribed.

Keywords: pin-loaded, resistance bands, body weight, EMG analysis

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4056 Octagon Shaped Wearable Antenna for Band at 4GHz

Authors: M. Khazini, M.Damou, Z. Souar

Abstract:

In this paper, octagon antenna ultra wideband (UWB) low band wearable antenna designs have been proposed for in-body to on-body communication channel of wireless. Single element antenna, dual elements, are designed and compared in free space and in body proximity. Conformal design has been focused. Liquid crystal polymer (LCP) is a material that has gained attention as a potential high-performance microwave substrate and packaging material. This investigation uses several methods to determine the electrical properties of LCP for millimeter-wave frequencies.

Keywords: ultra wideband, wearable antenna, slot antenna, liquid crystal polymer (LCP), CST studio

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4055 Field-Programmable Gate Array-Based Baseband Signals Generator of X-Band Transmitter for Micro Satellite/CubeSat

Authors: Shih-Ming Wang, Chun-Kai Yeh, Ming-Hwang Shie, Tai-Wei Lin, Chieh-Fu Chang

Abstract:

This paper introduces a FPGA-based baseband signals generator (BSG) of X-band transmitter developed by National Space Organization (NSPO), Taiwan, for earth observation. In order to gain more flexibility for various applications, a number of modulation schemes, QPSK, DeQPSK and 8PSK 4D-TCM are included. For micro satellite scenario, the maximum symbol rate is up to 150Mbsps, and the EVM is as low as 1.9%. For CubeSat scenario, the maximum symbol rate is up to 60Mbsps, and the EVM is less than 1.7%. The maximum data rates are 412.5Mbps and 165Mbps, respectively. Besides, triple modular redundancy (TMR) scheme is implemented in order to reduce single event effect (SEE) induced by radiation. Finally, the theoretical error performance is provided based on comprehensive analysis, especially when BER is lower and much lower than 10⁻⁶ due to low error bit requirement of modern high-resolution earth remote-sensing instruments.

Keywords: X-band transmitter, FPGA (Field-Programmable Gate Array), CubeSat, micro satellite

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4054 A Miniaturized Circular Patch Antenna Based on Metamaterial for WI-FI Applications

Authors: Fatima Zahra Moussa, Yamina Belhadef, Souheyla Ferouani

Abstract:

In this work, we present a new form of miniature circular patch antenna based on CSRR metamaterials with an extended bandwidth proposed for 5 GHz Wi-Fiapplications. A reflection coefficient of -35 dB and a radiation pattern of 7.47 dB are obtained when simulating the initial proposed antenna with the CST microwave studio simulation software. The notch insertion technique in the radiating element was used for matching the antenna to the desired frequency in the frequency band [5150-5875] MHz.An extension of the bandwidth from 332 MHz to 1423 MHz was done by the DGS (defected ground structure) technique to meet the user's requirement in the 5 GHz Wi-Fi frequency band.

Keywords: patch antenna, miniaturisation, CSRR, notches, wifi, DGS

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4053 Millimeter-Wave Silicon Power Amplifiers for 5G Wireless Communications

Authors: Kyoungwoon Kim, Cuong Huynh, Cam Nguyen

Abstract:

Exploding demands for more data, faster data transmission speed, less interference, more users, more wireless devices, and better reliable service-far exceeding those provided in the current mobile communications networks in the RF spectrum below 6 GHz-has led the wireless communication industry to focus on higher, previously unallocated spectrums. High frequencies in RF spectrum near (around 28 GHz) or within the millimeter-wave regime is the logical solution to meet these demands. This high-frequency RF spectrum is of increasingly important for wireless communications due to its large available bandwidths that facilitate various applications requiring large-data high-speed transmissions, reaching up to multi-gigabit per second, of vast information. It also resolves the traffic congestion problems of signals from many wireless devices operating in the current RF spectrum (below 6 GHz), hence handling more traffic. Consequently, the wireless communication industries are moving towards 5G (fifth generation) for next-generation communications such as mobile phones, autonomous vehicles, virtual reality, and the Internet of Things (IoT). The U.S. Federal Communications Commission (FCC) proved on 14th July 2016 three frequency bands for 5G around 28, 37 and 39 GHz. We present some silicon-based RFIC power amplifiers (PA) for possible implementation for 5G wireless communications around 28, 37 and 39 GHz. The 16.5-28 GHz PA exhibits measured gain of more than 34.5 dB and very flat output power of 19.4±1.2 dBm across 16.5-28 GHz. The 25.5/37-GHz PA exhibits gain of 21.4 and 17 dB, and maximum output power of 16 and 13 dBm at 25.5 and 37 GHz, respectively, in the single-band mode. In the dual-band mode, the maximum output power is 13 and 9.5 dBm at 25.5 and 37 GHz, respectively. The 10-19/23-29/33-40 GHz PA has maximum output powers of 15, 13.3, and 13.8 dBm at 15, 25, and 35 GHz, respectively, in the single-band mode. When this PA is operated in dual-band mode, it has maximum output powers of 11.4/8.2 dBm at 15/25 GHz, 13.3/3 dBm at 15/35 GHz, and 8.7/6.7 dBm at 25/35 GHz. In the tri-band mode, it exhibits 8.8/5.4/3.8 dBm maximum output power at 15/25/35 GHz. Acknowledgement: This paper was made possible by NPRP grant # 6-241-2-102 from the Qatar National Research Fund (a member of Qatar Foundation). The statements made herein are solely the responsibility of the authors

Keywords: Microwaves, Millimeter waves, Power Amplifier, Wireless communications

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4052 A Single Phase ZVT-ZCT Power Factor Correction Boost Converter

Authors: Yakup Sahin, Naim Suleyman Ting, Ismail Aksoy

Abstract:

In this paper, a single phase soft switched Zero Voltage Transition and Zero Current Transition (ZVT-ZCT) Power Factor Correction (PFC) boost converter is proposed. In the proposed PFC converter, the main switch turns on with ZVT and turns off with ZCT without any additional voltage or current stresses. Auxiliary switch turns on and off with zero current switching (ZCS). Also, the main diode turns on with zero voltage switching (ZVS) and turns off with ZCS. The proposed converter has features like low cost, simple control and structure. The output current and voltage are controlled by the proposed PFC converter in wide line and load range. The theoretical analysis of converter is clarified and the operating steps are given in detail. The simulation results of converter are obtained for 500 W and 100 kHz. It is observed that the semiconductor devices operate with soft switching (SS) perfectly. So, the switching power losses are minimum. Also, the proposed converter has 0.99 power factor with sinusoidal current shape.

Keywords: power factor correction, zero-voltage transition, zero-current transition, soft switching

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4051 Compositional Influence in the Photovoltaic Properties of Dual Ion Beam Sputtered Cu₂ZnSn(S,Se)₄ Thin Films

Authors: Brajendra S. Sengar, Vivek Garg, Gaurav Siddharth, Nisheka Anadkat, Amitesh Kumar, Shaibal Mukherjee

Abstract:

The optimal band gap (~ 1 to 1.5 eV) and high absorption coefficient ~104 cm⁻¹ has made Cu₂ZnSn(S,Se)₄ (CZTSSe) films as one of the most promising absorber materials in thin-film photovoltaics. Additionally, CZTSSe consists of elements that are abundant and non-toxic, makes it even more favourable. The CZTSSe thin films are grown at 100 to 500ᵒC substrate temperature (Tsub) on Soda lime glass (SLG) substrate by Elettrorava dual ion beam sputtering (DIBS) system by utilizing a target at 2.43x10⁻⁴ mbar working pressure with RF power of 45 W in argon ambient. The chemical composition, depth profiling, structural properties and optical properties of these CZTSSe thin films prepared on SLG were examined by energy dispersive X-ray spectroscopy (EDX, Oxford Instruments), Hiden secondary ion mass spectroscopy (SIMS) workstation with oxygen ion gun of energy up to 5 keV, X-ray diffraction (XRD) (Rigaku Cu Kα radiation, λ=.154nm) and Spectroscopic Ellipsometry (SE, M-2000D from J. A. Woollam Co., Inc). It is observed that from that, the thin films deposited at Tsub=200 and 300°C show Cu-poor and Zn-rich states (i.e., Cu/(Zn + Sn) < 1 and Zn/Sn > 1), which is not the case for films grown at other Tsub. It has been reported that the CZTSSe thin films with the highest efficiency are typically at Cu-poor and Zn-rich states. The values of band gap in the fundamental absorption region of CZTSSe are found to be in the range of 1.23-1.70 eV depending upon the Cu/(Zn+Sn) ratio. It is also observed that there is a decline in optical band gap with the increase in Cu/(Zn+Sn) ratio (evaluated from EDX measurement). Cu-poor films are found to have higher optical band gap than Cu-rich films. The decrease in the band gap with the increase in Cu content in case of CZTSSe films may be attributed to changes in the extent of p-d hybridization between Cu d-levels and (S, Se) p-levels. CZTSSe thin films with Cu/(Zn+Sn) ratio in the range 0.86–1.5 have been successfully deposited using DIBS. Optical band gap of the films is found to vary from 1.23 to 1.70 eV based on Cu/(Zn+Sn) ratio. CZTSe films with Cu/ (Zn+Sn) ratio of .86 are found to have optical band gap close to the ideal band gap (1.49 eV) for highest theoretical conversion efficiency. Thus by tailoring the value of Cu/(Zn+Sn), CZTSSe thin films with the desired band gap could be obtained. Acknowledgment: We are thankful to DIBS, EDX, and XRD facility equipped at Sophisticated Instrument Centre (SIC) at IIT Indore. The authors B. S. S and A. K. acknowledge CSIR, and V. G. acknowledges UGC, India for their fellowships. B. S. S is thankful to DST and IUSSTF for BASE Internship Award. Prof. Shaibal Mukherjee is thankful to DST and IUSSTF for BASE Fellowship and MEITY YFRF award. This work is partially supported by DAE BRNS, DST CERI, and DST-RFBR Project under India-Russia Programme of Cooperation in Science and Technology. We are thankful to Mukul Gupta for SIMS facility equipped at UGC-DAE Indore.

Keywords: CZTSSe, DIBS, EDX, solar cell

Procedia PDF Downloads 252
4050 Error Estimation for the Reconstruction Algorithm with Fan Beam Geometry

Authors: Nirmal Yadav, Tanuja Srivastava

Abstract:

Shannon theory is an exact method to recover a band limited signals from its sampled values in discrete implementation, using sinc interpolators. But sinc based results are not much satisfactory for band-limited calculations so that convolution with window function, having compact support, has been introduced. Convolution Backprojection algorithm with window function is an approximation algorithm. In this paper, the error has been calculated, arises due to this approximation nature of reconstruction algorithm. This result will be defined for fan beam projection data which is more faster than parallel beam projection.

Keywords: computed tomography, convolution backprojection, radon transform, fan beam

Procedia PDF Downloads 496
4049 Improving Capability of Detecting Impulsive Noise

Authors: Farbod Rohani, Elyar Ghafoori, Matin Saeedkondori

Abstract:

Impulse noise is electromagnetic emission which generated by many house hold appliances that are attached to the electrical network. The main difficulty of impulsive noise (IN) elimination process from communication channels is to distinguish it from the transmitted signal and more importantly choosing the proper threshold bandwidth in order to eliminate the signal. Because of wide band property of impulsive noise, we present a novel method for setting the detection threshold, by taking advantage of the fact that impulsive noise bandwidth is usually wider than that of typical communication channels and specifically OFDM channel. After IN detection procedure, we apply simple windowing mechanisms to eliminate them from the communication channel.

Keywords: impulsive noise, OFDM channel, threshold detecting, windowing mechanisms

Procedia PDF Downloads 345
4048 An Analysis of the Results of Trial Blasting of Site Development Project in the Volcanic Island

Authors: Dong Wook Lee, Seung Hyun Kim

Abstract:

Trial blasting is conducted to identify the characteristics of the blasting of the applicable ground before production blasting and to investigate various problems posed by blasting. The methods and pattern of production blasting are determined based on an analysis of the results of trial blasting. The bedrock in Jeju Island, South Korea is formed through the volcanic activities unlike the inland areas, composed of porous basalt. Trial blasting showed that the blast vibration frequency of sedimentary and metamorphic rocks in the inland areas is in a high frequency band of about 80 Hz while the blast vibration frequency of Jeju Island is in a low frequency band of 10~25 Hz. The frequency band is analyzed to be low due to the large cycle of blasting pattern as blast vibration passes through the layered structured ground layer where the rock formation and clickers irregularly repeat. In addition, the blast vibration equation derived from trial blasting was R: 0.885, S.E: 0.216 when applying the square root scaled distance (SRSD) relatively suitable for long distance, estimated at the confidence level of 95%.

Keywords: attenuation index, basaltic ground, blast vibration constant, blast vibration equation, clinker layer

Procedia PDF Downloads 281
4047 Influence of Measurement System on Negative Bias Temperature Instability Characterization: Fast BTI vs Conventional BTI vs Fast Wafer Level Reliability

Authors: Vincent King Soon Wong, Hong Seng Ng, Florinna Sim

Abstract:

Negative Bias Temperature Instability (NBTI) is one of the critical degradation mechanisms in semiconductor device reliability that causes shift in the threshold voltage (Vth). However, thorough understanding of this reliability failure mechanism is still unachievable due to a recovery characteristic known as NBTI recovery. This paper will demonstrate the severity of NBTI recovery as well as one of the effective methods used to mitigate, which is the minimization of measurement system delays. Comparison was done in between two measurement systems that have significant differences in measurement delays to show how NBTI recovery causes result deviations and how fast measurement systems can mitigate NBTI recovery. Another method to minimize NBTI recovery without the influence of measurement system known as Fast Wafer Level Reliability (FWLR) NBTI was also done to be used as reference.

Keywords: fast vs slow BTI, fast wafer level reliability (FWLR), negative bias temperature instability (NBTI), NBTI measurement system, metal-oxide-semiconductor field-effect transistor (MOSFET), NBTI recovery, reliability

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4046 Behavior of Current in a Semiconductor Nanostructure under Influence of Embedded Quantum Dots

Authors: H. Paredes Gutiérrez, S. T. Pérez-Merchancano

Abstract:

Motivated by recent experimental and theoretical developments, we investigate the influence of embedded quantum dot (EQD) of different geometries (lens, ring and pyramidal) in a double barrier heterostructure (DBH). We work with a general theory of quantum transport that accounts the tight-binding model for the spin dependent resonant tunneling in a semiconductor nanostructure, and Rashba spin orbital to study the spin orbit coupling. In this context, we use the second quantization theory for Rashba effect and the standard Green functions method. We calculate the current density as a function of the voltage without and in the presence of quantum dots. In the second case, we considered the size and shape of the quantum dot, and in the two cases, we worked considering the spin polarization affected by external electric fields. We found that the EQD generates significant changes in current when we consider different morphologies of EQD, as those described above. The first thing shown is that the current decreases significantly, such as the geometry of EQD is changed, prevailing the geometrical confinement. Likewise, we see that the current density decreases when the voltage is increased, showing that the quantum system studied here is more efficient when the morphology of the quantum dot changes.

Keywords: quantum semiconductors, nanostructures, quantum dots, spin polarization

Procedia PDF Downloads 278
4045 A Novel Dual Band-pass filter Based On Coupling of Composite Right/Left Hand CPW and (CSRRs) Uses Ferrite Components

Authors: Mohammed Berka, Khaled Merit

Abstract:

Recent works on microwave filters show that the constituent materials such filters are very important in the design and realization. Several solutions have been proposed to improve the qualities of filtering. In this paper, we propose a new dual band-pass filter based on the coupling of a composite (CRLH) coplanar waveguide with complementary split ring resonators (CSRRs). The (CRLH) CPW is composed of two resonators, each one has an interdigital capacitor (CID) and two short-circuited stubs parallel to top ground plane. On the lower ground plane, we use defected ground structure technology (DGS) to engrave two (CSRRs) offered with different shapes and dimensions. Between the top ground plane and the substrate, we place a ferrite layer to control the electromagnetic coupling between (CRLH) CPW and (CSRRs). The global filter that has coplanar access will have a dual band-pass behavior around the magnetic resonances of (CSRRs). Since there’s no scientific or experimental result in the literature for this kind of complicated structure, it was necessary to perform simulation using HFSS Ansoft designer.

Keywords: complementary split ring resonators, coplanar waveguide, ferrite, filter, stub.

Procedia PDF Downloads 406
4044 Improving 99mTc-tetrofosmin Myocardial Perfusion Images by Time Subtraction Technique

Authors: Yasuyuki Takahashi, Hayato Ishimura, Masao Miyagawa, Teruhito Mochizuki

Abstract:

Quantitative measurement of myocardium perfusion is possible with single photon emission computed tomography (SPECT) using a semiconductor detector. However, accumulation of 99mTc-tetrofosmin in the liver may make it difficult to assess that accurately in the inferior myocardium. Our idea is to reduce the high accumulation in the liver by using dynamic SPECT imaging and a technique called time subtraction. We evaluated the performance of a new SPECT system with a cadmium-zinc-telluride solid-state semi- conductor detector (Discovery NM 530c; GE Healthcare). Our system acquired list-mode raw data over 10 minutes for a typical patient. From the data, ten SPECT images were reconstructed, one for every minute of acquired data. Reconstruction with the semiconductor detector was based on an implementation of a 3-D iterative Bayesian reconstruction algorithm. We studied 20 patients with coronary artery disease (mean age 75.4 ± 12.1 years; range 42-86; 16 males and 4 females). In each subject, 259 MBq of 99mTc-tetrofosmin was injected intravenously. We performed both a phantom and a clinical study using dynamic SPECT. An approximation to a liver-only image is obtained by reconstructing an image from the early projections during which time the liver accumulation dominates (0.5~2.5 minutes SPECT image-5~10 minutes SPECT image). The extracted liver-only image is then subtracted from a later SPECT image that shows both the liver and the myocardial uptake (5~10 minutes SPECT image-liver-only image). The time subtraction of liver was possible in both a phantom and the clinical study. The visualization of the inferior myocardium was improved. In past reports, higher accumulation in the myocardium due to the overlap of the liver is un-diagnosable. Using our time subtraction method, the image quality of the 99mTc-tetorofosmin myocardial SPECT image is considerably improved.

Keywords: 99mTc-tetrofosmin, dynamic SPECT, time subtraction, semiconductor detector

Procedia PDF Downloads 339
4043 A Wideband Low-Profile Circularly-Polarized Slotted Patch Antenna

Authors: Sai Radavaram

Abstract:

A wideband low-profile circularly-polarized antenna, consisting of 2×2 sequentially-rotated, differentially-fed, slotted rectangular patch elements, is proposed. To realize the right-hand circular polarization, an anti-clockwise phase rotation of 0o, -90o, -180o and -270o is applied between the antenna elements. The proposed antenna, with a height of only 0.02lambda (where lambda is the wavelength of the antenna at the center frequency of the antenna), exhibits a 68% impedance bandwidth from 2 to 4.05 GHz with a 3dB axial ratio bandwidth in the order of 56% from 2.25 to 4.05 GHz. Moreover, a wide 3dB axial ratio beamwidth of 140o is obtained at the center frequency of 3 GHz, along with symmetrical radiation patterns over the operating frequency band.

Keywords: circular polarization, sequentially rotated, slotted patch antennas, wideband

Procedia PDF Downloads 90