Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 6

Search results for: cut-off frequency

6 Analysis and Simulation of TM Fields in Waveguides with Arbitrary Cross-Section Shapes by Means of Evolutionary Equations of Time-Domain Electromagnetic Theory

Authors: Ömer Aktaş, Olga A. Suvorova, Oleg Tretyakov

Abstract:

The boundary value problem on non-canonical and arbitrary shaped contour is solved with a numerically effective method called Analytical Regularization Method (ARM) to calculate propagation parameters. As a result of regularization, the equation of first kind is reduced to the infinite system of the linear algebraic equations of the second kind in the space of L2. This equation can be solved numerically for desired accuracy by using truncation method. The parameters as cut-off wavenumber and cut-off frequency are used in waveguide evolutionary equations of electromagnetic theory in time-domain to illustrate the real-valued TM fields with lossy and lossless media.

Keywords: Arbitrary cross section waveguide, analytical regularization method, evolutionary equations of electromagnetic theory of time-domain, TM field.

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5 Transient Analysis & Performance Estimation of Gate Inside Junctionless Transistor (GI-JLT)

Authors: Sangeeta Singh, Pankaj Kumar, P. N. Kondekar

Abstract:

In this paper, the transient device performance analysis of n-type Gate Inside JunctionLess Transistor (GI-JLT) has been evaluated. 3-D Bohm Quantum Potential (BQP) transport device simulation has been used to evaluate the delay and power dissipation performance. GI-JLT has a number of desirable device parameters such as reduced propagation delay, dynamic power dissipation, power and delay product, intrinsic gate delay and energy delay product as compared to Gate-all-around transistors GAA-JLT. In addition to this, various other device performance parameters namely, on/off current ratio, short channel effects (SCE), transconductance Generation Factor (TGF) and unity gain cut-off frequency (fT ) and subthreshold slope (SS) of the GI-JLT and GAA-JLT have been analyzed and compared. GI-JLT shows better device performance characteristics than GAA-JLT for low power and high frequency applications, because of its larger gate electrostatic control on the device operation.

Keywords: Gate-inside junctionless transistor GI-JLT, Gate-all-around junctionless transistor GAA-JLT, propagation delay, power delay product.

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4 Investigating Performance of Numerical Distance Relay with Higher Order Antialiasing Filter

Authors: Venkatesh C., K. Shanti Swarup

Abstract:

This paper investigates the impact on operating time delay and relay maloperation when 1st,2nd and 3rd order analog antialiasing filters are used in numerical distance protection. RC filter with cut-off frequency 90 Hz is used. Simulations are carried out for different SIR (Source to line Impedance Ratio), load, fault type and fault conditions using SIMULINK, where the voltage and current signals are fed online to the developed numerical distance relay model. Matlab is used for plotting the impedance trajectory. Investigation results shows that, about 75 % of the simulated cases, numerical distance relay operating time is not increased even-though there is a time delay when higher order filters are used. Relay maloperation (selectivity) also reduces (increases) when higher order filters are used in numerical distance protection.

Keywords: Antialiasing, capacitive voltage transformers, delay estimation, discrete Fourier transform (DFT), distance measurement, low-pass filters, source to line impedance ratio (SIR), protective relaying.

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3 Static and Dynamic Characteristics of an Appropriated and Recessed n-GaN/AlGaN/GaN HEMT

Authors: A. Hamdoune, M. Abdelmoumene, A. Hamroun

Abstract:

The objective of this paper is to simulate static I-V and dynamic characteristics of an appropriated and recessed n-GaN/AlxGa1-xN/GaN high electron mobility (HEMT). Using SILVACO TCAD device simulation, and optimized technological parameters; we calculate the drain-source current (lDS) as a function of the drain-source voltage (VDS) for different values ​​of the gate-source voltage (VGS), and the drain-source current (lDS) depending on the gate-source voltage (VGS) for a drain-source voltage (VDS) of 20 V, for various temperatures. Then, we calculate the cut-off frequency and the maximum oscillation frequency for different temperatures.

We obtain a high drain-current equal to 60 mA, a low knee voltage (Vknee) of 2 V, a high pinch-off voltage (VGS0) of 53.5 V, a transconductance greater than 600 mS/mm, a cut-off frequency (fT) of about 330 GHz, and a maximum oscillation frequency (fmax) of about 1 THz.

Keywords: n-GaN/AlGaN/GaN HEMT, drain-source current (IDS), transconductance (gm), cut-off frequency (fT), maximum oscillation frequency (fmax).

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2 A Low Power High Frequency CMOS RF Four Quadrant Analog Mixer

Authors: M. Aleshams, A. Shahsavandi

Abstract:

This paper describes a CMOS four-quadrant multiplier intended for use in the front-end receiver by utilizing the square-law characteristic of the MOS transistor in the saturation region. The circuit is based on 0.35 um CMOS technology simulated using HSPICE software. The mixer has a third-order inter the power consumption is 271uW from a single 1.2V power supply. One of the features of the proposed design is using two MOS transistors limitation to reduce the supply voltage, which leads to reduce the power consumption. This technique provides a GHz bandwidth response and low power consumption.

Keywords: RF-Mixer, Multiplier, cut-off frequency, power consumption

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1 Improvement in Silicon on Insulator Devices using Strained Si/SiGe Technology for High Performance in RF Integrated Circuits

Authors: Morteza Fathipour, Samira Omidbakhsh, Kimia Khodayari

Abstract:

RF performance of SOI CMOS device has attracted significant amount of interest recently. In order to improve RF parameters, Strained Si/Relaxed Si0.8Ge0.2 investigated as a replacement for Si technology .Enhancement of carrier mobility associated with strain engineering makes Strained Si a promising candidate for improving RF performance of CMOS technology. From the simulation, the cut-off frequency is estimated to be 224 GHZ, whereas in SOI at similar bias is about 188 GHZ. Therefore, Strained Si exhibits 19% improvement in cut-off frequency over similar Si counterpart. In this paper, Ion/Ioff ratio is studied as one of the key parameters in logic and digital application. Strained Si/SiGe demonstrates better Ion/Ioff characteristic than SOI, in similar channel length of 100 nm.Another important key analog figures of merit such as Early Voltage (VEA) ,transconductance vs drain current (gm /Ids) are studied. They introduce the efficiency of the devices to convert dc power into ac frequency.

Keywords: cut-off frequency, RF application, Silicon oninsulator, Strained Si/SiGe on insulator.

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