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Low Frequency Multiple Divider Using Resonant Model

Authors: Chih Chin Yang, Chih Yu Lee, Jing Yi Wang, Mei Zhen Xue, Chia Yueh Wu


A well-defined frequency multiple dividing (FMD) circuit using a resonant model is presented in this research. The basic component of a frequency multiple divider as used in a resonant model is established by compositing a well-defined resonant effect of negative differential resistance (NDR) characteristics which possesses a wider operational region and high operational current at a bias voltage of about 1.15 V. The resonant model is then applied in the frequency dividing circuit with the above division ratio (RD) of 200 at the signal input of middle frequency. The division ratio also exists at the input of a low frequency signal.

Keywords: Frequency, Divider, resonant model

Digital Object Identifier (DOI):

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[1] C. C. Yang and Y. K. Su, “Well-defined electrical properties of high-strain resonant interband tunneling structure,” Microelectronics Journal, vol. 39 (1), pp.67-69, Jan. 2008.
[2] J. A. Duraes, M. J. Araujo Sales, R. F. Souto, A. Romariz, J. C. da Costa, A. M. Ceschin, and S. G. C. Moreira, “Observation of negative differential resistance and hysteretic effect on buriti oil; polystyrene organic devices,” Applied Physics Letters, vol. 89(13), pp.133502, Sept. 2006.
[3] J. Chen, L. Xu, J. Lin, Y. Geng, L. Wang, and D. Ma, “Negative differential resistance effect in organic devices based on an anthracene derivative,” Applied Physics letters, vol. 89(8), pp. 083514, Aug. 2006.
[4] J. P. Wagt, H. Tang, T. E. Broekaert, A. Seabaugh, and Y. C. Kao, “Miltibit resonant tunneling diode SRAM cell based on slew-rate addressing,” IEEE Transactions on Electron Devices, vol. 46(1), pp.55-62, Jan. 1999.
[5] R. Lame and J. Yang, “A physics based model for the RTD quantum capacitance,” IEEE Transactions on Electron Devices, vol. 50(3), pp.785-789, March 2003.
[6] J. H. Tsai, “High-performance AlInAs/GaInAs –doped HEMT with negative differential resistance switch for logic application,” Solid State Electronics, vol. 48(1), pp. 81-85, Jan. 2004.
[7] K. J. Gan, C. S. Tsai, D. S. Liang, C. D. Tu, and Y. H. Chen, “Multi input NOR logic design using negative differential resistance circuits implemented by standard SiGe process,” Solid-State Electronics, vol. 52(2), pp. 175-178, Feb. 2008.
[8] Y. Kawano, Y. Ohno, S. Kishimoto, K. Maezawa, and T. Mizutani, “50 GHz frequency divider using resonant tunneling chaos circuit,” Electronics Letters, vol. 38(7), pp. 305-306, Mar. 2002.
[9] T. Kim, Y. Jeong, and K. Yang, “Low power static frequency divider using an InP-based monolithic RTD/HBT technology,” Electronics Letters, vol. 42(1), pp. 27-29, Jan. 2006.
[10] H. J. Pan, K. W. Lin, K. H. Yu, C. C. Cheng, K. B. Thei, W. C. Liu and H. I. Chen, “Highly hydrogen sensitive Pd/InP metal oxide semiconductor schottky diode hydrogen sensor,” Electrons Letters, vol. 38(2), pp.92-94, Jan. 2002.
[11] B. Zhang, J. Wang, C. Xue, W. Zhang, and J. Xiong, “A GaAs acoustic sensor with frequency output based on resonant tunneling diodes,” Sensors and Actuators A, vol. 139(1-2), pp. 42-46, Sept. 2007.
[12] B. Razavi, Design of Analog CMOS Integrated Circuits. New York: McGraw-Hill, 2001, ch. 15, pp. 540–541.
[13] C. C. Yang, “Frequency computation of resonant signal in resonant tunneling circuit for communication,” Advances in Mathematical and Computational Methods (Adv Math Comput Meth), vol. 1, No.2, pp. 8-14, Dec. 2011.
[14] M. M. Driscoll, “Phase noise performance of analog frequency dividers,” Proceedings of the 43rd IEEE Annual Symposium on Frequency Control, pp. 342 - 348, 1989.