Search results for: spintronic circuits
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 318

Search results for: spintronic circuits

108 Modeling the Saltatory Conduction in Myelinated Axons by Order Reduction

Authors: Ruxandra Barbulescu, Daniel Ioan, Gabriela Ciuprina

Abstract:

The saltatory conduction is the way the action potential is transmitted along a myelinated axon. The potential diffuses along the myelinated compartments and it is regenerated in the Ranvier nodes due to the ion channels allowing the flow across the membrane. For an efficient simulation of populations of neurons, it is important to use reduced order models both for myelinated compartments and for Ranvier nodes and to have control over their accuracy and inner parameters. The paper presents a reduced order model of this neural system which allows an efficient simulation method for the saltatory conduction in myelinated axons. This model is obtained by concatenating reduced order linear models of 1D myelinated compartments and nonlinear 0D models of Ranvier nodes. The models for the myelinated compartments are selected from a series of spatially distributed models developed and hierarchized according to their modeling errors. The extracted model described by a nonlinear PDE of hyperbolic type is able to reproduce the saltatory conduction with acceptable accuracy and takes into account the finite propagation speed of potential. Finally, this model is again reduced in order to make it suitable for the inclusion in large-scale neural circuits.

Keywords: action potential, myelinated segments, nonlinear models, Ranvier nodes, reduced order models, saltatory conduction

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107 Investigation of Threshold Voltage Shift in Gamma Irradiated N-Channel and P-Channel MOS Transistors of CD4007

Authors: S. Boorboor, S. A. H. Feghhi, H. Jafari

Abstract:

The ionizing radiations cause different kinds of damages in electronic components. MOSFETs, most common transistors in today’s digital and analog circuits, are severely sensitive to TID damage. In this work, the threshold voltage shift of CD4007 device, which is an integrated circuit including P-channel and N-channel MOS transistors, was investigated for low dose gamma irradiation under different gate bias voltages. We used linear extrapolation method to extract threshold voltage from ID-VG characteristic curve. The results showed that the threshold voltage shift was approximately 27.5 mV/Gy for N-channel and 3.5 mV/Gy for P-channel transistors at the gate bias of |9 V| after irradiation by Co-60 gamma ray source. Although the sensitivity of the devices under test were strongly dependent to biasing condition and transistor type, the threshold voltage shifted linearly versus accumulated dose in all cases. The overall results show that the application of CD4007 as an electronic buffer in a radiation therapy system is limited by TID damage. However, this integrated circuit can be used as a cheap and sensitive radiation dosimeter for accumulated dose measurement in radiation therapy systems.

Keywords: threshold voltage shift, MOS transistor, linear extrapolation, gamma irradiation

Procedia PDF Downloads 254
106 Electron Microscopical Analysis of Arterial Line Filters During Cardiopulmonary Bypass

Authors: Won-Gon Kim

Abstract:

Introduction: The clinical value of arterial line filters is still a controversial issue. Proponents of arterial line filtration argue that filters remove particulate matter and undissolved gas from circulation, while opponents argue the absence of conclusive clinical data. We conducted scanning electron microscope (SEM) studies of arterial line filters used clinically in the CPB circuits during adult cardiac surgery and analyzed the types and characteristics of materials entrapped in the arterial line filters. Material and Methods: Twelve arterial line filters were obtained during routine hypothermic cardiopulmonary bypass in 12 adult cardiac patients. The arterial line filter was a screen type with a pore size of 40 ㎛ (Baxter Health care corporation Bentley division, Irvine, CA, U.S.A.). After opening the housing, the woven polyester strands were examined with SEM. Results and Conclusion: All segments examined(120 segments, each 2.5 X 2.5 cm in size) contained no embolic particles larger in their cross-sectional area than the pore size of the filter(40 ㎛). The origins of embolic particulates were mostly from environmental foreign bodies. This may suggest a possible need for more aggressive filtration of smaller particulates than is generally carried out at the present time.

Keywords: arterial line filter, tubing wear, scanning electron microscopy, SEM

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105 Design of Reconfigurable and Non-reciprocal Metasurface with Independent Controls of Transmission Gain, Attenuation and Phase

Authors: Shi Yu Wang, Qian Wei Zhang, He Li, Hao Han He, Yun Bo Li

Abstract:

The spatial controls of electromagnetic (EM) waves have always been a research hot spot in recent years. And the rapid development of metasurface-based technologies has provided more freedoms for manipulating the EM waves. Here we propose the design of reconfigurable and non-reciprocal metasurface with independent controls of transmission gain, attenuation and phase. The proposed meta-atom mainly consists of the cascaded textures including the receiving antenna, the middle layer in which the power amplifiers (PAs), programmable attenuator and phase shifter locate, and the transmitting antenna. The programmable attenuator and phase shifter can realize the dynamic controls of transmission amplitude and phase independently, and the PA devices in the meta-atom can actualize the performance of non-reciprocal transmission. The proposed meta-atom is analyzed applying field-circuit co-simulation and a sample of the meta-atom is fabricated and measured under using two standard waveguides. The measured results verify the ability of the independent manipulation for transmission amplitude and phase of the proposed the meta-atom and the design method has been verified very well correspondingly.

Keywords: active circuits, independent controls of multiple electromagnetic features, non-reciprocal electromagnetic transmission, reconfigurable and programmable

Procedia PDF Downloads 55
104 An E-Maintenance IoT Sensor Node Designed for Fleets of Diverse Heavy-Duty Vehicles

Authors: George Charkoftakis, Panagiotis Liosatos, Nicolas-Alexander Tatlas, Dimitrios Goustouridis, Stelios M. Potirakis

Abstract:

E-maintenance is a relatively new concept, generally referring to maintenance management by monitoring assets over the Internet. One of the key links in the chain of an e-maintenance system is data acquisition and transmission. Specifically for the case of a fleet of heavy-duty vehicles, where the main challenge is the diversity of the vehicles and vehicle-embedded self-diagnostic/reporting technologies, the design of the data acquisition and transmission unit is a demanding task. This clear if one takes into account that a heavy-vehicles fleet assortment may range from vehicles with only a limited number of analog sensors monitored by dashboard light indicators and gauges to vehicles with plethora of sensors monitored by a vehicle computer producing digital reporting. The present work proposes an adaptable internet of things (IoT) sensor node that is capable of addressing this challenge. The proposed sensor node architecture is based on the increasingly popular single-board computer – expansion boards approach. In the proposed solution, the expansion boards undertake the tasks of position identification by means of a global navigation satellite system (GNSS), cellular connectivity by means of 3G/long-term evolution (LTE) modem, connectivity to on-board diagnostics (OBD), and connectivity to analog and digital sensors by means of a novel design of expansion board. Specifically, the later provides eight analog plus three digital sensor channels, as well as one on-board temperature / relative humidity sensor. The specific device offers a number of adaptability features based on appropriate zero-ohm resistor placement and appropriate value selection for limited number of passive components. For example, although in the standard configuration four voltage analog channels with constant voltage sources for the power supply of the corresponding sensors are available, up to two of these voltage channels can be converted to provide power to the connected sensors by means of corresponding constant current source circuits, whereas all parameters of analog sensor power supply and matching circuits are fully configurable offering the advantage of covering a wide variety of industrial sensors. Note that a key feature of the proposed sensor node, ensuring the reliable operation of the connected sensors, is the appropriate supply of external power to the connected sensors and their proper matching to the IoT sensor node. In standard mode, the IoT sensor node communicates to the data center through 3G/LTE, transmitting all digital/digitized sensor data, IoT device identity, and position. Moreover, the proposed IoT sensor node offers WiFi connectivity to mobile devices (smartphones, tablets) equipped with an appropriate application for the manual registration of vehicle- and driver-specific information, and these data are also forwarded to the data center. All control and communication tasks of the IoT sensor node are performed by dedicated firmware. It is programmed with a high-level language (Python) on top of a modern operating system (Linux). Acknowledgment: This research has been co-financed by the European Union and Greek national funds through the Operational Program Competitiveness, Entrepreneurship, and Innovation, under the call RESEARCH—CREATE—INNOVATE (project code: T1EDK- 01359, IntelligentLogger).

Keywords: IoT sensor nodes, e-maintenance, single-board computers, sensor expansion boards, on-board diagnostics

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103 A Survey and Theory of the Effects of Various Hamlet Videos on Viewers’ Brains

Authors: Mark Pizzato

Abstract:

How do ideas, images, and emotions in stage-plays and videos affect us? Do they evoke a greater awareness (or cognitive reappraisal of emotions) through possible shifts between left-cortical, right-cortical, and subcortical networks? To address these questions, this presentation summarizes the research of various neuroscientists, especially Bernard Baars and others involved in Global Workspace Theory, Matthew Lieberman in social neuroscience, Iain McGilchrist on left and right cortical functions, and Jaak Panksepp on the subcortical circuits of primal emotions. Through such research, this presentation offers an ‘inner theatre’ model of the brain, regarding major hubs of neural networks and our animal ancestry. It also considers recent experiments, by Mario Beauregard, on the cognitive reappraisal of sad, erotic, and aversive film clips. Finally, it applies the inner-theatre model and related research to survey results of theatre students who read and then watched the ‘To be or not to be’ speech in 8 different video versions (from stage and screen productions) of William Shakespeare’s Hamlet. Findings show that students become aware of left-cortical, right-cortical, and subcortical brain functions—and shifts between them—through staging and movie-making choices in each of the different videos.

Keywords: cognitive reappraisal, Hamlet, neuroscience, Shakespeare, theatre

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102 Characteristics of GaAs/InGaP and AlGaAs/GaAs/InAlGaP Npn Heterostructural Optoelectronic Switches

Authors: Der-Feng Guo

Abstract:

Optoelectronic switches have attracted a considerable attention in the semiconductor research field due to their potential applications in optical computing systems and optoelectronic integrated circuits (OEICs). With high gains and high-speed operations, npn heterostructures can be used to produce promising optoelectronic switches. It is known that the bulk barrier and heterostructure-induced potential spike act important roles in the characteristics of the npn heterostructures. To investigate the effects of bulk barrier and potential spike heights on the optoelectronic switching of the npn heterostructures, GaAs/InGaP and AlGaAs/GaAs/InAlGaP npn heterostructural optoelectronic switches (HSOSs) have been fabricated in this work. It is seen that the illumination decreases the switching voltage Vs and increases the switching current Is, and thus the OFF state is under dark and ON state under illumination in the optical switching of the GaAs/InGaP HSOS characteristics. But in the AlGaAs/GaAs/InAlGaP HSOS characteristics, the Vs and Is present contrary trends, and the OFF state is under illumination and ON state under dark. The studied HSOSs show quite different switching variations with incident light, which are mainly attributed to the bulk barrier and potential spike heights affected by photogenerated carriers.

Keywords: bulk barrier, heterostructure, optoelectronic switch, potential spike

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101 Artificial Neurons Based on Memristors for Spiking Neural Networks

Authors: Yan Yu, Wang Yu, Chen Xintong, Liu Yi, Zhang Yanzhong, Wang Yanji, Chen Xingyu, Zhang Miaocheng, Tong Yi

Abstract:

Neuromorphic computing based on spiking neural networks (SNNs) has emerged as a promising avenue for building the next generation of intelligent computing systems. Owing to its high-density integration, low power, and outstanding nonlinearity, memristors have attracted emerging attention on achieving SNNs. However, fabricating a low-power and robust memristor-based spiking neuron without extra electrical components is still a challenge for brain-inspired systems. In this work, we demonstrate a TiO₂-based threshold switching (TS) memristor to emulate a leaky integrate-and-fire (LIF) neuron without auxiliary circuits, used to realize single layer fully connected (FC) SNNs. Moreover, our TiO₂-based resistive switching (RS) memristors realize spiking-time-dependent-plasticity (STDP), originating from the Ag diffusion-based filamentary mechanism. This work demonstrates that TiO2-based memristors may provide an efficient method to construct hardware neuromorphic computing systems.

Keywords: leaky integrate-and-fire, memristor, spiking neural networks, spiking-time-dependent-plasticity

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100 Design and Characterization of a Smart Composite Fabric for Knee Brace

Authors: Rohith J. K., Amir Nazemi, Abbas S. Milani

Abstract:

In Paralympic sports, athletes often depend on some form of equipment to enable competitive sporting, where most of this equipment would only allow passive physiological supports and discrete physiological measurements. Active feedback physiological support and continuous detection of performance indicators, without time or space constraints, would be beneficial in more effective training and performance measures of Paralympic athletes. Moreover, occasionally the athletes suffer from fatigue and muscular stains due to improper monitoring systems. The latter challenges can be overcome by using Smart Composites technology when manufacturing, e.g., knee brace and other sports wearables utilities, where the sensors can be fused together into the fabric and an assisted system actively support the athlete. This paper shows how different sensing functionality may be created by intrinsic and extrinsic modifications onto different types of composite fabrics, depending on the level of integration and the employed functional elements. Results demonstrate that fabric sensors can be well-tailored to measure muscular strain and be used in the fabrication of a smart knee brace as a sample potential application. Materials, connectors, fabric circuits, interconnects, encapsulation and fabrication methods associated with such smart fabric technologies prove to be customizable and versatile.

Keywords: smart composites, sensors, smart fabrics, knee brace

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99 4-Channel CWDM Optical Transceiver Applying Silicon Photonics Ge-Photodiode and MZ-Modulator

Authors: Do-Won Kim, Andy Eu Jin Lim, Raja Muthusamy Kumarasamy, Vishal Vinayak, Jacky Wang Yu-Shun, Jason Liow Tsung Yang, Patrick Lo Guo Qiang

Abstract:

In this study, we demonstrate 4-channel coarse wavelength division multiplexing (CWDM) optical transceiver based on silicon photonics integrated circuits (PIC) of waveguide Ge-photodiode (Ge-PD) and Mach Zehnder (MZ)-modulator. 4-channel arrayed PICs of Ge-PD and MZ-modulator are verified to operate at 25 Gbps/ch achieving 4x25 Gbps of total data rate. 4 bare dies of single-channel commercial electronics ICs (EICs) of trans-impedance amplifier (TIA) for Ge-PD and driver IC for MZ-modulator are packaged with PIC on printed circuit board (PCB) in a chip-on-board (COB) manner. Each single-channel EIC is electrically connected to the one channel of 4-channel PICs by wire bonds to trace. The PICs have 4-channel multiplexer for MZ-modulator and 4-channel demultiplexer for Ge-PD. The 4-channel multiplexer/demultiplexer have echelle gratings for4 CWDM optic signals of which center wavelengths are 1511, 1531, 1553, and 1573 nm. Its insertion loss is around 4dB with over 15dB of extinction ratio.The dimension of 4-channel Ge-PD is 3.6x1.4x0.3mm, and its responsivity is 1A/W with dark current of less than 20 nA.Its measured 3dB bandwidth is around 20GHz. The dimension of the 4-channel MZ-modulator is 3.6x4.8x0.3mm, and its 3dB bandwidth is around 11Ghz at -2V of reverse biasing voltage. It has 2.4V•cmbyVπVL of 6V for π shift to 4 mm length modulator.5x5um of Inversed tapered mode size converter with less than 2dB of coupling loss is used for the coupling of the lensed fiber which has 5um of mode field diameter.The PCB for COB packaging and signal transmission is designed to have 6 layers in the hybrid layer structure. 0.25 mm-thick Rogers Duroid RT5880 is used as the first core dielectric layer for high-speed performance over 25 Gbps. It has 0.017 mm-thick of copper layers and its dielectric constant is 2.2and dissipation factor is 0.0009 at 10 GHz. The dimension of both single ended and differential microstrip transmission lines are calculated using full-wave electromagnetic (EM) field simulator HFSS which RF industry is using most. It showed 3dB bandwidth at around 15GHz in S-parameter measurement using network analyzer. The wire bond length for transmission line and ground connection from EIC is done to have less than 300 µm to minimize the parasitic effect to the system.Single layered capacitors (SLC) of 100pF and 1000pF are connected as close as possible to the EICs for stabilizing the DC biasing voltage by decoupling. Its signal transmission performance is under measurement at 25Gbps achieving 100Gbps by 4chx25Gbps. This work can be applied for the active optical cable (AOC) and quad small form-factor pluggable (QSFP) for high-speed optical interconnections. Its demands are quite large in data centers targeting 100 Gbps, 400 Gbps, and 1 Tbps. As the demands of high-speed AOC and QSFP for the application to intra/inter data centers increase, this silicon photonics based high-speed 4 channel CWDM scheme can have advantages not only in data throughput but also cost effectiveness since it reduces fiber cost dramatically through WDM.

Keywords: active optical cable(AOC), 4-channel coarse wavelength division multiplexing (CWDM), communication system, data center, ge-photodiode, Mach Zehnder (MZ) modulator, optical interconnections, optical transceiver, photonics integrated circuits (PIC), quad small form-factor pluggable (QSFP), silicon photonics

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98 Future of Nanotechnology in Digital MacDraw

Authors: Pejman Hosseinioun, Abolghasem Ghasempour, Elham Gholami, Hamed Sarbazi

Abstract:

Considering the development in global semiconductor technology, it is anticipated that gadgets such as diodes and resonant transistor tunnels (RTD/RTT), Single electron transistors (SET) and quantum cellular automata (QCA) will substitute CMOS (Complementary Metallic Oxide Semiconductor) gadgets in many applications. Unfortunately, these new technologies cannot disembark the common Boolean logic efficiently and are only appropriate for liminal logic. Therefor there is no doubt that with the development of these new gadgets it is necessary to find new MacDraw technologies which are compatible with them. Resonant transistor tunnels (RTD/RTT) and circuit MacDraw with enhanced computing abilities are candida for accumulating Nano criterion in the future. Quantum cellular automata (QCA) are also advent Nano technological gadgets for electrical circuits. Advantages of these gadgets such as higher speed, smaller dimensions, and lower consumption loss are of great consideration. QCA are basic gadgets in manufacturing gates, fuses and memories. Regarding the complex Nano criterion physical entity, circuit designers can focus on logical and constructional design to decrease complication in MacDraw. Moreover Single electron technology (SET) is another noteworthy gadget considered in Nano technology. This article is a survey in future of Nano technology in digital MacDraw.

Keywords: nano technology, resonant transistor tunnels, quantum cellular automata, semiconductor

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97 Robotics and Embedded Systems Applied to the Buried Pipeline Inspection

Authors: Robson C. Santos, Julio C. P. Ribeiro, Iorran M. de Castro, Luan C. F. Rodrigues, Sandro R. L. Silva, Diego M. Quesada

Abstract:

The work aims to develop a robot in the form of autonomous vehicle to detect, inspection and mapping of underground pipelines through the ATmega328 Arduino platform. Hardware prototyping very similar to C / C ++ language that facilitates its use in robotics open source, resembles PLC used in large industrial processes. The robot will traverse the surface independently of direct human action, in order to automate the process of detecting buried pipes, guided by electromagnetic induction. The induction comes from coils that sends the signal to the Arduino microcontroller contained in that will make the difference in intensity and the treatment of the information, then this determines actions to electrical components such as relays and motors, allowing the prototype to move on the surface and getting the necessary information. The robot was developed by electrical and electronic assemblies that allowed test your application. The assembly is made up of metal detector coils, circuit boards and microprocessor, which interconnected circuits previously developed can determine, process control and mechanical actions for a robot (autonomous car) that will make the detection and mapping of buried pipelines plates.

Keywords: robotic, metal detector, embedded system, pipeline inspection

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96 Physico-Chemical Quality Study of Geothermal Waters of the Region DjéRid-Tunisia

Authors: Anis Eloud, Mohamed Ben Amor

Abstract:

Tunisia is a semi-arid country on ¾ of its territory. It is characterized by the scarcity of water resources and accentuated by climate variability. The potential water resources are estimated at 4.6 million m3 / year, of which 2.7 million m3 / year represent surface water and 1.9 million m3 / year feed all the layers that make up the renewable groundwater resources. Water available in Tunisia easily exceed health or agricultural salinity standards. Barely 50% of water resources are less than 1.5 g / l divided at 72% of surface water salinity, 20% of deep groundwater and only 8% in groundwater levels. Southern Tunisia has the largest web "of water in the country, these waters are characterized by a relatively high salinity may exceed 4 gl-1. This is the "root of many problems encountered during their operation. In the region of Djérid, Albian wells are numerous. These wells debit a geothermal water with an average flow of 390 L / s. This water is characterized by a relatively high salinity and temperature of which is around 65 ° C at the source. Which promotes the formation of limescale deposits within the water supply pipe and the cooling loss thereby increasing the load in direct relation with enormous expense and circuits to replace these lines when completely plugged. The present work is a study of geothermal water quality of the region Djérid from physico-chemical analyzes.

Keywords: water quality, salinity, geothermal, supply pipe

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95 Design and Fabrication of a Programmable Stiffness-Sensitive Gripper for Object Handling

Authors: Mehdi Modabberifar, Sanaz Jabary, Mojtaba Ghodsi

Abstract:

Stiffness sensing is an important issue in medical diagnostic, robotics surgery, safe handling, and safe grasping of objects in production lines. Detecting and obtaining the characteristics in dwelling lumps embedded in a soft tissue and safe removing and handling of detected lumps is needed in surgery. Also in industry, grasping and handling an object without damaging in a place where it is not possible to access a human operator is very important. In this paper, a method for object handling is presented. It is based on the use of an intelligent gripper to detect the object stiffness and then setting a programmable force for grasping the object to move it. The main components of this system includes sensors (sensors for measuring force and displacement), electrical (electrical and electronic circuits, tactile data processing and force control system), mechanical (gripper mechanism and driving system for the gripper) and the display unit. The system uses a rotary potentiometer for measuring gripper displacement. A microcontroller using the feedback received by the load cell, mounted on the finger of the gripper, calculates the amount of stiffness, and then commands the gripper motor to apply a certain force on the object. Results of Experiments on some samples with different stiffness show that the gripper works successfully. The gripper can be used in haptic interfaces or robotic systems used for object handling.

Keywords: gripper, haptic, stiffness, robotic

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94 A Test Methodology to Measure the Open-Loop Voltage Gain of an Operational Amplifier

Authors: Maninder Kaur Gill, Alpana Agarwal

Abstract:

It is practically not feasible to measure the open-loop voltage gain of the operational amplifier in the open loop configuration. It is because the open-loop voltage gain of the operational amplifier is very large. In order to avoid the saturation of the output voltage, a very small input should be given to operational amplifier which is not possible to be measured practically by a digital multimeter. A test circuit for measurement of open loop voltage gain of an operational amplifier has been proposed and verified using simulation tools as well as by experimental methods on breadboard. The main advantage of this test circuit is that it is simple, fast, accurate, cost effective, and easy to handle even on a breadboard. The test circuit requires only the device under test (DUT) along with resistors. This circuit has been tested for measurement of open loop voltage gain for different operational amplifiers. The underlying goal is to design testable circuits for various analog devices that are simple to realize in VLSI systems, giving accurate results and without changing the characteristics of the original system. The DUTs used are LM741CN and UA741CP. For LM741CN, the simulated gain and experimentally measured gain (average) are calculated as 89.71 dB and 87.71 dB, respectively. For UA741CP, the simulated gain and experimentally measured gain (average) are calculated as 101.15 dB and 105.15 dB, respectively. These values are found to be close to the datasheet values.

Keywords: Device Under Test (DUT), open loop voltage gain, operational amplifier, test circuit

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93 An Approach of Node Model TCnNet: Trellis Coded Nanonetworks on Graphene Composite Substrate

Authors: Diogo Ferreira Lima Filho, José Roberto Amazonas

Abstract:

Nanotechnology opens the door to new paradigms that introduces a variety of novel tools enabling a plethora of potential applications in the biomedical, industrial, environmental, and military fields. This work proposes an integrated node model by applying the same concepts of TCNet to networks of nanodevices where the nodes are cooperatively interconnected with a low-complexity Mealy Machine (MM) topology integrating in the same electronic system the modules necessary for independent operation in wireless sensor networks (WSNs), consisting of Rectennas (RF to DC power converters), Code Generators based on Finite State Machine (FSM) & Trellis Decoder and On-chip Transmit/Receive with autonomy in terms of energy sources applying the Energy Harvesting technique. This approach considers the use of a Graphene Composite Substrate (GCS) for the integrated electronic circuits meeting the following characteristics: mechanical flexibility, miniaturization, and optical transparency, besides being ecological. In addition, graphene consists of a layer of carbon atoms with the configuration of a honeycomb crystal lattice, which has attracted the attention of the scientific community due to its unique Electrical Characteristics.

Keywords: composite substrate, energy harvesting, finite state machine, graphene, nanotechnology, rectennas, wireless sensor networks

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92 Notched Bands in Ultra-Wideband UWB Filter Design for Advanced Wireless Applications

Authors: Abdul Basit, Amil Daraz, Guoqiang Zhang

Abstract:

With the increasing demand for wireless communication systems for unlicensed indoor applications, the FCC, in February 2002, allocated unlicensed bands ranging from 3.1 GHZ to 10.6 GHz with fractional bandwidth of about 109 %, because it plays a key role in the radiofrequency (RF) front ends devices and has been widely applied in many other microwave circuits. Targeting the proposed band defined by the FCC for the UWB system, this article presents a UWB bandpass filter with three stop bands for the mitigation of wireless bands that may interfere with the UWB range. For this purpose, two resonators are utilized for the implementation of triple-notched bands. The C-shaped resonator is used for the first notch band creation at 3.4 GHz to suppress the WiMAX signal, while the H-shaped resonator is employed in the initial UWB design to introduce the dual notched characteristic at 4.5 GHz and 8.1 GHz to reject the WLAN and Satellite Communication signals. The overall circuit area covered by the proposed design is 30.6 mm × 20 mm, or in terms of guided wavelength at the first stopband, its size is 0.06 λg × 0.02 λg. The presented structure shows a good return loss under -10 dB over most of the passband and greater than -15 dB for the notched frequency bands. Finally, the filter is simulated and analyzed in HFSS 15.0. All the bands for the rejection of wireless signals are independently controlled, which makes this work superior to the rest of the UWB filters presented in the literature.

Keywords: a bandpass filter (BPF), ultra-wideband (UWB), wireless communication, C-shaped resonator, triple notch

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91 Overview of Multi-Chip Alternatives for 2.5 and 3D Integrated Circuit Packagings

Authors: Ching-Feng Chen, Ching-Chih Tsai

Abstract:

With the size of the transistor gradually approaching the physical limit, it challenges the persistence of Moore’s Law due to the development of the high numerical aperture (high-NA) lithography equipment and other issues such as short channel effects. In the context of the ever-increasing technical requirements of portable devices and high-performance computing, relying on the law continuation to enhance the chip density will no longer support the prospects of the electronics industry. Weighing the chip’s power consumption-performance-area-cost-cycle time to market (PPACC) is an updated benchmark to drive the evolution of the advanced wafer nanometer (nm). The advent of two and half- and three-dimensional (2.5 and 3D)- Very-Large-Scale Integration (VLSI) packaging based on Through Silicon Via (TSV) technology has updated the traditional die assembly methods and provided the solution. This overview investigates the up-to-date and cutting-edge packaging technologies for 2.5D and 3D integrated circuits (ICs) based on the updated transistor structure and technology nodes. The author concludes that multi-chip solutions for 2.5D and 3D IC packagings are feasible to prolong Moore’s Law.

Keywords: moore’s law, high numerical aperture, power consumption-performance-area-cost-cycle time to market, 2.5 and 3D- very-large-scale integration, packaging, through silicon via

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90 Chemical Mechanical Polishing Wastewater Treatment through Membrane Distillation

Authors: Imtisal-e-Noor, Andrew Martin, Olli Dahl

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Chemical Mechanical Polishing (CMP) has developed as a chosen planarization technique in nano-electronics industries for fabrication of the integrated circuits (ICs). These CMP processes release a huge amount of wastewater that contains oxides of nano-particles (silica, alumina, and ceria) and oxalic acid. Since, this wastewater has high solid content (TS), chemical oxygen demand (COD), and turbidity (NTU); therefore, in order to fulfill the environmental regulations, it needs to be treated up to the local and international standards. The present study proposed a unique CMP wastewater treatment method called Membrane Distillation (MD). MD is a non-isothermal membrane separation process, which allows only volatiles, i.e., water vapors to permeate through the membrane and provides 100% contaminants rejection. The performance of the MD technology is analyzed in terms of total organic carbon (TOC), turbidity, TS, COD, and residual oxide concentration in permeate/distilled water while considering different operating conditions (temperature, flow rate, and time). The results present that high-quality permeate has been recovered after removing 99% of the oxide particles and oxalic acid. The distilled water depicts turbidity < 1 NTU, TOC < 3 mg/L, TS < 50 mg/L, and COD < 100 mg/L. These findings clearly show that the MD treated water can be reused further in industrial processes or allowable to discharge in any water body under the stringent environmental regulations.

Keywords: chemical mechanical polishing, environmental regulations, membrane distillation, wastewater treatment

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89 Application to Molecular Electronics of Thin Layers of Organic Materials

Authors: M. I. Benamrani, H. Benamrani

Abstract:

In the research to replace silicon and other thin-film semiconductor technologies and to develop long-term technology that is environmentally friendly, low-cost, and abundant, there is growing interest today given to organic materials. Our objective is to prepare polymeric layers containing metal particles deposited on a surface of semiconductor material which can have better electrical properties and which could be applied in the fields of nanotechnology as an alternative to the existing processes involved in the design of electronic circuits. This work consists in the development of composite materials by complexation and electroreduction of copper in a film of poly (pyrrole benzoic acid). The deposition of the polymer film on a monocrystalline silicon substrate is made by electrochemical oxidation in an organic medium. The incorporation of copper particles into the polymer is achieved by dipping the electrode in a solution of copper sulphate to complex the cupric ions, followed by electroreduction in an aqueous solution to precipitate the copper. In order to prepare the monocrystalline silicon substrate as an electrode for electrodeposition, an in-depth study on its surface state was carried out using photoacoustic spectroscopy. An analysis of the optical properties using this technique on the effect of pickling using a chemical solution was carried out. Transmission-photoacoustic and impedance spectroscopic techniques give results in agreement with those of photoacoustic spectroscopy.

Keywords: photoacoustic, spectroscopy, copper sulphate, chemical solution

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88 Application of Carbon Nanotube and Nanowire FET Devices in Future VLSI

Authors: Saurabh Chaudhury, Sanjeet Kumar Sinha

Abstract:

The MOSFET has been the main building block in high performance and low power VLSI chips for the last several decades. Device scaling is fundamental to technological advancements, which allows more devices to be integrated on a single die providing greater functionality per chip. Ultimately, the goal of scaling is to build an individual transistor that is smaller, faster, cheaper, and consumes less power. Scaling continued following Moore's law initially and now we see an exponential growth in today's nano scaled chip. However, device scaling to deep nano meter regime leads to exponential increase in leakage currents and excessive heat generation. Moreover, fabrication process variability causing a limitation to further scaling. Researchers believe that with a mix of chemistry, physics, and engineering, nano electronics may provide a solution to increasing fabrication costs and may allow integrated circuits to be scaled beyond the limits of the modern transistor. Carbon nano tube (CNT) and nano wires (NW) based FETs have been analyzed and characterized in laboratory and also been demonstrated as prototypes. This work presents an extensive simulation based study and analysis of CNTFET and NW-FET devices and comparison of the results with conventional MOSFET. From this study, we can conclude that these devices have got some excellent properties and favorable characteristics which will definitely lead the future semiconductor devices in post silicon era.

Keywords: carbon nanotube, nanowire FET, low power, nanoscaled devices, VLSI

Procedia PDF Downloads 382
87 Modeling and Simulation of Pad Surface Topography by Diamond Dressing in Chemical-Mechanical Polishing Process

Authors: A.Chen Chao-Chang, Phong Pham-Quoc

Abstract:

Chemical-mechanical polishing (CMP) process has been widely applied on fabricating integrated circuits (IC) with a soft polishing pad combined with slurry composed of micron or nano-scaled abrasives for generating chemical reaction to remove substrate or film materials from wafer. During CMP process, pad uniformity usually works as a datum surface of wafer planarization and pad asperities can dominate the microscopic pad-slurry-wafer interaction. However, pad topography can be changed by related mechanism factors of CMP and it needs to be re-conditioned or dressed by a diamond dresser of well-distributed diamond grits on a disc surface. It is still very complicated to analyze and understand kinematic of diamond dressing process under the effects of input variables including oscillatory of diamond dresser and rotation speed ratio between the pad and the diamond dresser. This paper has developed a generic geometric model to clarify the kinematic modeling of diamond dressing processes such as dresser/pad motion, pad cutting locus, the relative velocity of the diamond abrasive grits on pad surface, and overlap of cutting for prediction of pad surface topography. Simulation results focus on comparing and analysis kinematics of the diamond dressing on certain CMP tools. Results have shown the significant parameters for diamond dressing process and also discussed. Future study can apply on diamond dresser design and experimental verification of pad dressing process.

Keywords: kinematic modeling, diamond dresser, pad cutting locus, CMP

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86 Closed Greenhouse Production Systems for Smart Plant Production in Urban Areas

Authors: U. Schmidt, D. Dannehl, I. Schuch, J. Suhl, T. Rocksch, R. Salazar-Moreno, E. Fitz-Rodrigues, A. Rojano Aquilar, I. Lopez Cruz, G. Navas Gomez, R. A. Abraham, L. C. Irineo, N. G. Gilberto

Abstract:

The integration of agricultural production systems into urban areas is a challenge for the coming decades. Because of increasing greenhouse gas emission and rising resource consumption as well as costs in animal husbandry, the dietary habits of people in the 21st century have to focus on herbal foods. Intensive plant cultivation systems in large cities and megacities require a smart coupling of information, material and energy flow with the urban infrastructure in terms of Horticulture 4.0. In recent years, many puzzle pieces have been developed for these closed processes at the Humboldt University. To compile these for an urban plant production, it has to be optimized and networked with urban infrastructure systems. In the field of heat energy production, it was shown that with closed greenhouse technology and patented heat exchange and storage technology energy can be provided for heating and domestic hot water supply in the city. Closed water circuits can be drastically reducing the water requirements of plant production in urban areas. Ion sensitive sensors and new disinfection methods can help keep circulating nutrient solutions in the system for a longer time in urban plant production greenhouses.

Keywords: semi closed, greenhouses, urban farming, solar heat collector, closed water cycles, aquaponics

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85 Development of a Combustible Gas Detector with Two Sensor Modules to Enable Measuring Range of Low Concentration

Authors: Young Gyu Kim, Sangguk Ahn, Gyoutae Park, Hiesik Kim

Abstract:

In the gas industrial fields, there are many problems to detect extremely small amounts of combustible gas (CH₄) if a conventional semiconductor is used. Those reasons are that measuring is difficult at the low concentration level, the stabilization time is long, and an initial response time is slow. In this study, we propose a method to solve these issues using two specific sensors to overcome the circumstances of temperature and humidity. This idea is to combine a catalytic and a semiconductor type sensor and to utilize every advantage from every sensor’s characteristic. In order to achieve the goal, we reduced fluctuations of a gas sensor for temperature and humidity by applying designed circuits for sensing temperature and humidity. And we induced the best calibration line of gas sensors through adjusting a weight value corresponding to changeable patterns of temperature and humidity after their data are previously acquired and stored. We proposed and developed the gas leak detector using two sensor modules, which is first operated by a semiconductor sensor for measuring small gas quantities and second a catalytic type sensor is detected if measuring range of the first sensor is beyond. We conclusively verified characteristics of sharp sensitivity and fast response time against even at lower gas concentration level through experiments other than a conventional gas sensor. We think that our proposed idea is very useful if another gas leak is developed to enable measuring extremely small quantities of toxic and flammable gases.

Keywords: gas sensor, leak detector, lower concentration, and calibration

Procedia PDF Downloads 217
84 Lockit: A Logic Locking Automation Software

Authors: Nemanja Kajtez, Yue Zhan, Basel Halak

Abstract:

The significant rise in the cost of manufacturing of nanoscale integrated circuits (IC) has led the majority of IC design companies to outsource the fabrication of their products to other companies, often located in different countries. This multinational nature of the hardware supply chain has led to a host of security threats, including IP piracy, IC overproduction, and Trojan insertion. To combat that, researchers have proposed logic locking techniques to protect the intellectual properties of the design and increase the difficulty of malicious modification of its functionality. However, the adoption of logic locking approaches is rather slow due to the lack of the integration with IC production process and the lack of efficacy of existing algorithms. This work automates the logic locking process by developing software using Python that performs the locking on a gate-level netlist and can be integrated with the existing digital synthesis tools. Analysis of the latest logic locking algorithms has demonstrated that the SFLL-HD algorithm is one of the most secure and versatile in trading-off levels of protection against different types of attacks and was thus selected for implementation. The presented tool can also be expanded to incorporate the latest locking mechanisms to keep up with the fast-paced development in this field. The paper also presents a case study to demonstrate the functionality of the tool and how it could be used to explore the design space and compare different locking solutions. The source code of this tool is available freely from (https://www.researchgate.net/publication/353195333_Source_Code_for_The_Lockit_Tool).

Keywords: design automation, hardware security, IP piracy, logic locking

Procedia PDF Downloads 150
83 An Energy Efficient Spectrum Shaping Scheme for Substrate Integrated Waveguides Based on Spread Reshaping Code

Authors: Yu Zhao, Rainer Gruenheid, Gerhard Bauch

Abstract:

In the microwave and millimeter-wave transmission region, substrate-integrated waveguide (SIW) is a very promising candidate for the development of circuits and components. It facilitates the transmission at the data rates in excess of 200 Gbit/s. An SIW mimics a rectangular waveguide by approximating the closed sidewalls with a via fence. This structure suppresses the low frequency components and makes the channel of the SIW a bandpass or high pass filter. This channel characteristic impedes the conventional baseband transmission using non-return-to-zero (NRZ) pulse shaping scheme. Therefore, mixers are commonly proposed to be used as carrier modulator and demodulator in order to facilitate a passband transmission. However, carrier modulation is not an energy efficient solution, because modulation and demodulation at high frequencies consume a lot of energy. For the first time to our knowledge, this paper proposes a spectrum shaping scheme of low complexity for the channel of SIW, namely spread reshaping code. It aims at matching the spectrum of the transmit signal to the channel frequency response. It facilitates the transmission through the SIW channel while it avoids using carrier modulation. In some cases, it even does not need equalization. Simulations reveal a good performance of this scheme, such that, as a result, eye opening is achieved without any equalization or modulation for the respective transmission channels.

Keywords: bandpass channel, eye-opening, switching frequency, substrate-integrated waveguide, spectrum shaping scheme, spread reshaping code

Procedia PDF Downloads 135
82 Heat Transfer Process Parameter Optimization in SI/Ge Using TAGUCHI Method

Authors: Evln Ranga Charyulu, S. P. Venu Madhavarao, S. Udaya kumar, S. V. S. S. N. V. G. Krishna Murthy

Abstract:

With the advent of new nanometer process technologies, it is possible to integrate billion transistors on a single substrate. When more and more functionality included there is the possibility of multi-million transistors switching simultaneously consuming more power and dissipating more power along with more leakage of current into the substrate of porous silicon or germanium material. These results in substrate heating and thermal noise generation coupled to signals of interest. The heating process is represented by coupled nonlinear partial differential equations in porous silicon and germanium. By identifying heat sources and heat fluxes may results in designing of ultra-low power circuits. The PDEs are solved by finite difference scheme assuming that boundary layer equations in porous silicon and germanium. Local heat fluxes along the vertical isothermal surface immersed in porous SI/Ge are considered. The parameters considered for optimization are thermal diffusivity, thermal expansion coefficient, thermal diffusion ratio, permeability, specific heat at constant temperatures, Rayleigh number, amplitude of wavy surface, mass expansion coefficient. The diffusion of heat was caused by the concentration gradient. Thermal physical properties are homogeneous and isotropic. By using L8, TAGUCHI method the parameters are optimized.

Keywords: heat transfer, pde, taguchi optimization, SI/Ge

Procedia PDF Downloads 314
81 Double Negative Differential Resistance Features in Series AIN/GaN Double-Barrier Resonant Tunneling Diodes Vertically Integrated by Plasma-Assisted Molecular Beam Epitaxy

Authors: Jiajia Yao, Guanlin Wu, Fang Liu, Junshuai Xue, Yue Hao

Abstract:

This study reports on the epitaxial growth of a GaN-based resonant tunneling diode (RTD) structure with stable and repeatable double negative differential resistance (NDR) characteristics at room temperature on a c-plane GaN-on-sapphire template using plasma-assisted molecular beam epitaxy (PA-MBE) technology. In this structure, two independent AlN/GaN RTDs are epitaxially connected in series in the vertical growth direction through a silicon-doped GaN layer. As the collector electrode bias voltage increases, the two RTDs respectively align the ground state energy level in the quantum well with the 2DEG energy level in the emitter accumulation well to achieve quantum resonant tunneling and then reach the negative differential resistance (NDR) region. The two NDR regions exhibit similar peak current densities and peak-to-valley current ratios, which are 230 kA/cm² and 249 kA/cm², 1.33 and 1.38, respectively, for a device with a collector electrode mesa diameter of 1 µm. The consistency of the NDR is much higher than the results of on-chip discrete RTD device interconnection, resulting from the smaller chip area, fewer interconnect parasitic parameters, and less process complexity. The methods and results presented in this paper show the brilliant prospects of GaN RTDs in the development of multi-value logic digital circuits.

Keywords: MBE, AlN/GaN, RTDs, double NDR

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80 Approximation of PE-MOCVD to ALD for TiN Concerning Resistivity and Chemical Composition

Authors: D. Geringswald, B. Hintze

Abstract:

The miniaturization of circuits is advancing. During chip manufacturing, structures are filled for example by metal organic chemical vapor deposition (MOCVD). Since this process reaches its limits in case of very high aspect ratios, the use of alternatives such as the atomic layer deposition (ALD) is possible, requiring the extension of existing coating systems. However, it is an unsolved question to what extent MOCVD can achieve results similar as an ALD process. In this context, this work addresses the characterization of a metal organic vapor deposition of titanium nitride. Based on the current state of the art, the film properties coating thickness, sheet resistance, resistivity, stress and chemical composition are considered. The used setting parameters are temperature, plasma gas ratio, plasma power, plasma treatment time, deposition time, deposition pressure, number of cycles and TDMAT flow. The derived process instructions for unstructured wafers and inside a structure with high aspect ratio include lowering the process temperature and increasing the number of cycles, the deposition and the plasma treatment time as well as the plasma gas ratio of hydrogen to nitrogen (H2:N2). In contrast to the current process configuration, the deposited titanium nitride (TiN) layer is more uniform inside the entire test structure. Consequently, this paper provides approaches to employ the MOCVD for structures with increasing aspect ratios.

Keywords: ALD, high aspect ratio, PE-MOCVD, TiN

Procedia PDF Downloads 275
79 Integration from Laboratory to Industrialization for Hybrid Printed Electronics

Authors: Ahmed Moulay, Mariia Zhuldybina, Mirko Torres, Mike Rozel, Ngoc Duc Trinh, Chloé Bois

Abstract:

Hybrid printed electronics technology (HPE) provides innovative opportunities to enhance conventional electronics applications, which are often based on printed circuit boards (PCB). By combining the best of both performance from conventional electronic components and the flexibility from printed circuits makes it possible to manufacture HPE at high volumes using roll-to-roll printing processes. However, several challenges must be overcome in order to accurately integrate an electronic component on a printed circuit. In this presentation, we will demonstrate the integration process of electronic components from the lab scale to the industrialization. Both the printing quality and the integration technique must be studied to define the optimal conditions. To cover the parameters that influence the print quality of the printed circuit, different printing processes, flexible substrates, and conductive inks will be used to determine the optimized printing process/ink/substrate system. After the systems is selected, an electronic component of 2.5 mm2 chip size will be integrated to validate the functionality of the printed, electronic circuit. Critical information such as the conductive adhesive, the curing conditions, and the chip encapsulation will be determined. Thanks to these preliminary results, we are able to demonstrate the chip integration on a printed circuit using industrial equipment, showing the potential of industrialization, compatible using roll-to-roll printing and integrating processes.

Keywords: flat bed screen-printing, hybrid printed electronics, integration, large-scale production, roll-to-roll printing, rotary screen printing

Procedia PDF Downloads 150