Search results for: silicon optical resonator
Commenced in January 2007
Frequency: Monthly
Edition: International
Paper Count: 2152

Search results for: silicon optical resonator

2032 Notched Bands in Ultra-Wideband UWB Filter Design for Advanced Wireless Applications

Authors: Abdul Basit, Amil Daraz, Guoqiang Zhang

Abstract:

With the increasing demand for wireless communication systems for unlicensed indoor applications, the FCC, in February 2002, allocated unlicensed bands ranging from 3.1 GHZ to 10.6 GHz with fractional bandwidth of about 109 %, because it plays a key role in the radiofrequency (RF) front ends devices and has been widely applied in many other microwave circuits. Targeting the proposed band defined by the FCC for the UWB system, this article presents a UWB bandpass filter with three stop bands for the mitigation of wireless bands that may interfere with the UWB range. For this purpose, two resonators are utilized for the implementation of triple-notched bands. The C-shaped resonator is used for the first notch band creation at 3.4 GHz to suppress the WiMAX signal, while the H-shaped resonator is employed in the initial UWB design to introduce the dual notched characteristic at 4.5 GHz and 8.1 GHz to reject the WLAN and Satellite Communication signals. The overall circuit area covered by the proposed design is 30.6 mm × 20 mm, or in terms of guided wavelength at the first stopband, its size is 0.06 λg × 0.02 λg. The presented structure shows a good return loss under -10 dB over most of the passband and greater than -15 dB for the notched frequency bands. Finally, the filter is simulated and analyzed in HFSS 15.0. All the bands for the rejection of wireless signals are independently controlled, which makes this work superior to the rest of the UWB filters presented in the literature.

Keywords: a bandpass filter (BPF), ultra-wideband (UWB), wireless communication, C-shaped resonator, triple notch

Procedia PDF Downloads 47
2031 Soliton Interaction in Multi-Core Optical Fiber: Application to WDM System

Authors: S. Arun Prakash, V. Malathi, M. S. Mani Rajan

Abstract:

The analytical bright two soliton solution of the 3-coupled nonlinear Schrödinger equations with variable coefficients in birefringent optical fiber is obtained by Darboux transformation method. To the design of ultra-speed optical devices, Soliton interaction and control in birefringence fiber is investigated. Lax pair is constructed for N coupled NLS system through AKNS method. Using two soliton solution, we demonstrate different interaction behaviors of solitons in birefringent fiber depending on the choice of control parameters. Our results shows that interactions of optical solitons have some specific applications such as construction of logic gates, optical computing, soliton switching, and soliton amplification in wavelength division multiplexing (WDM) system.

Keywords: optical soliton, soliton interaction, soliton switching, WDM

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2030 Computational Analysis on Thermal Performance of Chip Package in Electro-Optical Device

Authors: Long Kim Vu

Abstract:

The central processing unit in Electro-Optical devices is a Field-programmable gate array (FPGA) chip package allowing flexible, reconfigurable computing but energy consumption. Because chip package is placed in isolated devices based on IP67 waterproof standard, there is no air circulation and the heat dissipation is a challenge. In this paper, the author successfully modeled a chip package which various interposer materials such as silicon, glass and organics. Computational fluid dynamics (CFD) was utilized to analyze the thermal performance of chip package in the case of considering comprehensive heat transfer modes: conduction, convection and radiation, which proposes equivalent heat dissipation. The logic chip temperature varying with time is compared between the simulation and experiment results showing the excellent correlation, proving the reasonable chip modeling and simulation method.

Keywords: CFD, FPGA, heat transfer, thermal analysis

Procedia PDF Downloads 156
2029 Silicon-To-Silicon Anodic Bonding via Intermediate Borosilicate Layer for Passive Flow Control Valves

Authors: Luc Conti, Dimitry Dumont-Fillon, Harald van Lintel, Eric Chappel

Abstract:

Flow control valves comprise a silicon flexible membrane that deflects against a substrate, usually made of glass, containing pillars, an outlet hole, and anti-stiction features. However, there is a strong interest in using silicon instead of glass as substrate material, as it would simplify the process flow by allowing the use of well controlled anisotropic etching. Moreover, specific devices demanding a bending of the substrate would also benefit from the inherent outstanding mechanical strength of monocrystalline silicon. Unfortunately, direct Si-Si bonding is not easily achieved with highly structured wafers since residual stress may prevent the good adhesion between wafers. Using a thermoplastic polymer, such as parylene, as intermediate layer is not well adapted to this design as the wafer-to-wafer alignment is critical. An alternative anodic bonding method using an intermediate borosilicate layer has been successfully tested. This layer has been deposited onto the silicon substrate. The bonding recipe has been adapted to account for the presence of the SOI buried oxide and intermediate glass layer in order not to exceed the breakdown voltage. Flow control valves dedicated to infusion of viscous fluids at very high pressure have been made and characterized. The results are compared to previous data obtained using the standard anodic bonding method.

Keywords: anodic bonding, evaporated glass, flow control valve, drug delivery

Procedia PDF Downloads 168
2028 The Effect of Aluminum Oxide Nanoparticles on the Optical Properties of (PVP-PEG) Blend

Authors: Hussein Hakim, Zainab Al-Ramadhan, Ahmed Hashim

Abstract:

Polymer nano composites of polyvinylpyrrolidone and poly-ethylene glycol with different concentrations of aluminum oxide (Al2O3) nano particles have been prepared by solution cast method. The optical characterizations have been done by analyzing the absorption (A) spectra in the 300–800 nm spectral region. It was found that the optical energy gap decreases with the increasing of Al2O3 nano particles content. The optical constants (refractive index, extinction coefficient, real and imaginary parts of the dielectric constant) are changing with increasing aluminum oxide nano particle concentrations.

Keywords: nanocomposites, polyvinylpyrrolidone, optical constants, polymers, blend

Procedia PDF Downloads 393
2027 Semiconductor Device of Tapered Waveguide for Broadband Optical Communications

Authors: Keita Iwai, Isao Tomita

Abstract:

To expand the optical spectrum for use in broadband optical communications, we study the properties of a semiconductor waveguide device with a tapered structure including its third-order optical nonlinearity. Spectral-broadened output by the tapered structure has the potential to create a compact, built-in device for optical communications. Here we deal with a compound semiconductor waveguide, the material of which is the same as that of laser diodes used in the communication systems, i.e., InₓGa₁₋ₓAsᵧP₁₋ᵧ, which has large optical nonlinearity. We confirm that our structure widens the output spectrum sufficiently by controlling its taper form factor while utilizing the large nonlinear refraction of InₓGa₁₋ₓAsᵧP₁₋ᵧ. We also examine the taper effect for nonlinear optical loss.

Keywords: InₓGa₁₋ₓAsᵧP₁₋ᵧ, waveguide, nonlinear refraction, spectral spreading, taper device

Procedia PDF Downloads 121
2026 Opto-Electronic Study of the Silicon Nitride Doped Cerium Thin Films Deposed by Evaporation

Authors: Bekhedda Kheira

Abstract:

Rare earth-doped luminescent materials (Ce, Eu, Yb, Tb, etc.) are now widely used in flat-screen displays, fluorescent lamps, and photovoltaic solar cells. They exhibit several fine emission bands in a spectral range from near UV to infrared when added to inorganic materials. This study chose cerium oxide (CeO2) because of its exceptional intrinsic properties, energy levels, and ease of implementation of doped layer synthesis. In this study, thin films were obtained by the evaporation deposition technique of cerium oxide (CeO2) on silicon Nitride (SiNx) layers and then annealing under nitrogen N2. The characterization of these films was carried out by different techniques, scanning electron microscopy (SEM) to visualize morphological properties and (EDS) was used to determine the elemental composition of individual dots, optical analysis characterization of thin films was studied by a spectrophotometer in reflectance mode to determine different energies gap of the nanostructured layers and to adjust these values for the photovoltaic application.

Keywords: thin films, photovoltaic, rare earth, evaporation

Procedia PDF Downloads 45
2025 Topochemical Synthesis of Epitaxial Silicon Carbide on Silicon

Authors: Andrey V. Osipov, Sergey A. Kukushkin, Andrey V. Luk’yanov

Abstract:

A method is developed for the solid-phase synthesis of epitaxial layers when the substrate itself is involved into a topochemical reaction and the reaction product grows in the interior of substrate layer. It opens up new possibilities for the relaxation of the elastic energy due to the attraction of point defects formed during the topochemical reaction in anisotropic media. The presented method of silicon carbide (SiC) formation employs a topochemical reaction between the single-crystalline silicon (Si) substrate and gaseous carbon monoxide (CO). The corresponding theory of interaction of point dilatation centers in anisotropic crystals is developed. It is eliminated that the most advantageous location of the point defects is the direction (111) in crystals with cubic symmetry. The single-crystal SiC films with the thickness up to 200 nm have been grown on Si (111) substrates owing to the topochemical reaction with CO. Grown high-quality single-crystal SiC films do not contain misfit dislocations despite the huge lattice mismatch value of ~20%. Also the possibility of growing of thick wide-gap semiconductor films on these templates SiC/Si(111) and, accordingly, its integration into Si electronics, is demonstrated. Finally, the ab initio theory of SiC formation due to the topochemical reaction has been developed.

Keywords: epitaxy, silicon carbide, topochemical reaction, wide-bandgap semiconductors

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2024 Characteristics of Silicon Integrated Vertical Carbon Nanotube Field-Effect Transistors

Authors: Jingqi Li

Abstract:

A new vertical carbon nanotube field effect transistor (CNTFET) has been developed. The source, drain and gate are vertically stacked in this structure. The carbon nanotubes are put on the side wall of the vertical stack. Unique transfer characteristics which depend on both silicon type and the sign of drain voltage have been observed in silicon integrated CNTFETs. The significant advantage of this CNTFET is that the short channel of the transistor can be fabricated without using complicate lithography technique.

Keywords: carbon nanotubes, field-effect transistors, electrical property, short channel fabrication

Procedia PDF Downloads 319
2023 Effects of Magnetic Field on 4H-SiC P-N Junctions

Authors: Khimmatali Nomozovich Juraev

Abstract:

Silicon carbide is one of the promising materials with potential applications in electronic devices using high power, high frequency and high electric field. Currently, silicon carbide is used to manufacture high power and frequency diodes, transistors, radiation detectors, light emitting diodes (LEDs) and other functional devices. In this work, the effects of magnetic field on p-n junctions based on 4H-SiC were experimentally studied. As a research material, monocrystalline silicon carbide wafers (Cree Research, Inc., USA) with relatively few growth defects grown by physical vapor transport (PVT) method were used: Nd dislocations 104 cm², Nm micropipes ~ 10–10² cm-², thickness ~ 300-600 μm, surface ~ 0.25 cm², resistivity ~ 3.6–20 Ωcm, the concentration of background impurities Nd − Na ~ (0.5–1.0)×1017cm-³. The initial parameters of the samples were determined on a Hall Effect Measurement System HMS-7000 (Ecopia) measuring device. Diffusing Ni nickel atoms were covered to the silicon surface of silicon carbide in a Universal Vacuum Post device at a vacuum of 10-⁵ -10-⁶ Torr by thermal sputtering and kept at a temperature of 600-650°C for 30 minutes. Then Ni atoms were diffused into the silicon carbide 4H-SiC sample at a temperature of 1150-1300°C by low temperature diffusion method in an air atmosphere, and the effects of the magnetic field on the I-V characteristics of the samples were studied. I-V characteristics of silicon carbide 4H-SiC p-n junction sample were measured in the magnetic field and in the absence of a magnetic field. The measurements were carried out under conditions where the magnitude of the magnetic field induction vector was 0.5 T. In the state, the direction of the current flowing through the diode is perpendicular to the direction of the magnetic field. From the obtained results, it can be seen that the magnetic field significantly affects the I-V characteristics of the p-n junction in the magnetic field when it is measured in the forward direction. Under the influence of the magnetic field, the change of the magnetic resistance of the sample of silicon carbide 4H-SiC p-n junction was determined. It was found that changing the magnetic field poles increases the direct forward current of the p-n junction or decreases it when the field direction changes. These unique electrical properties of the 4H-SiC p-n junction sample of silicon carbide, that is, the change of the sample's electrical properties in a magnetic field, makes it possible to fabricate magnetic field sensing devices based on silicon carbide to use at harsh environments in future. So far, the productions of silicon carbide magnetic detectors are not available in the industry.

Keywords: 4H-SiC, diffusion Ni, effects of magnetic field, I-V characteristics

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2022 Optical and Dielectric Properties of Self-Assembled 0D Hybrid Organic-Inorganic Insulator

Authors: S. Kassou, R. El Mrabet, A. Belaaraj, P. Guionneau, N. Hadi, T. Lamcharfi

Abstract:

The organic–inorganic hybrid perovskite-like [C6H5C2H4NH3]2ZnCl4 (PEA-ZnCl4) was synthesized by saturated solutions method. X-ray powder diffraction, Raman spectroscopy, UV-visible transmittance, and capacitance meter measurements have been used to characterize the structure, the functional groups, the optical parameters, and the dielectric constants of the material. The material has a layered structure. The optical transmittance (T %) was recorded and applied to deduce the absorption coefficient (α) and optical band gap (Eg). The hybrid shows an insulator character with a direct band gap about 4.46 eV, and presents high dielectric constants up to a frequency of about 105 Hz, which suggests a ferroelectric behavior. The reported optical and dielectric properties can help to understand the fundamental properties of perovskite materials and also to be used for optimizing or designing new devices.

Keywords: dielectric constants, optical band gap (eg), optical parameters, Raman spectroscopy, self-assembly organic inorganic hybrid

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2021 Sensitivity Studies for a Pin Homojunction a-Si:H Solar Cell

Authors: Leila Ayat, Afak Meftah

Abstract:

Amorphous-silicon alloys have great promise as low cost solar cell materials. They have excellent photo-conductivity and high optical absorption to sunlight. Now PIN a-Si:H based solar cells are widely used in power generation modules. However, to improve the performance of these cells further, a better fundamental under-standing of the factors limiting cell performance in the homo junction PIN structure is necessary. In this paper we discuss the sensitivity of light J-V characteristics to various device and material parameters in PIN homo junction solar cells. This work is a numerical simulation of the output parameters of a PIN a-Si:H solar cell under AM1.5 spectrum. These parameters are the short circuit current (Jsc), the open circuit voltage (Voc), the fill factor (FF), the conversion efficiency. The simulation was performed with SCAPS-1D software version 3.3 developed at ELIS in Belgium by Marc Burgelman et al. The obtained results are in agreement with experiment. In addition, the effect of the thickness, doping density, capture cross sections of the gap states and the band microscopic mobilities on the output parameters of the cell are also presented.

Keywords: amorphous silicon p-i-n junctions, thin film, solar cells, sensitivity

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2020 Effect of Environmental Stress Factors on the Degradation of Display Glass

Authors: Jinyoung Choi, Hyun-A Kim, Sunmook Lee

Abstract:

The effects of environmental stress factors such as storage conditions on the deterioration phenomenon and the characteristic of the display glass were studied. In order to investigate the effect of chemical stress on the glass during the period of storage, the respective components of commercial glass were first identified by XRF (X-ray fluorescence). The glass was exposed in the acid, alkali, neutral environment for about one month. Thin film formed on the glass surface was analyzed by XRD (X-ray diffraction) and FT-IR (Fourier transform infrared). The degree of corrosion and the rate of deterioration of each sample were confirmed by measuring the concentrations of silicon, calcium and chromium with ICP-OES (Inductively coupled plasma-optical emission spectrometry). The optical properties of the glass surface were confirmed by SEM (Scanning electron microscope) before and after the treatment. Acknowledgement—The authors gratefully acknowledge the financial support from the Ministry of Trade, Industry and Energy (Grant Number: 10076817)

Keywords: corrosion, degradation test, display glass, environmental stress factor

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2019 Patented Free-Space Optical System for Auto Aligned Optical Beam Allowing to Compensate Mechanical Misalignments

Authors: Aurelien Boutin

Abstract:

In optical systems such as Variable Optical Delay Lines, where a collimated beam has to go back and forth, corner cubes are used in order to keep the reflected beam parallel to the incoming beam. However, the reflected beam can be laterally shifted, which will lead to losses. In this paper, we report on a patented optical design that allows keeping the reflected beam with the exact same position and direction whatever the displacement of the corner cube leading to zero losses. After explaining how the optical design works and theoretically allows to compensate for any defects in the translation of the corner cube, we will present the results of experimental comparisons between a standard layout (i.e., only corner cubes) and our optical layout. To compare both optical layouts, we used a fiber-to-fiber coupling setup. It consists of a couple of lights from one fiber to the other, thanks to two lenses. The ensemble [fiber+lense] is fixed and called a collimator so that the light is coupled from one collimator to another. Each collimator was precisely made in order to have a precise working distance. In the experiment, we measured and compared the Insertion Losses (IL) variations between both collimators with the distance between them (i.e., natural Gaussian beam coupling losses) and between both collimators in the different optical layouts tested, with the same optical length propagation. We will show that the IL variations of our setup are less than 0.05dB with respect to the IL variations of collimators alone.

Keywords: free-space optics, variable optical delay lines, optical cavity, auto-alignment

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2018 Tuning the Surface Roughness of Patterned Nanocellulose Films: An Alternative to Plastic Based Substrates for Circuit Priniting in High-Performance Electronics

Authors: Kunal Bhardwaj, Christine Browne

Abstract:

With the increase in global awareness of the environmental impacts of plastic-based products, there has been a massive drive to reduce our use of these products. Use of plastic-based substrates in electronic circuits has been a matter of concern recently. Plastics provide a very smooth and cheap surface for printing high-performance electronics due to their non-permeability to ink and easy mouldability. In this research, we explore the use of nano cellulose (NC) films in electronics as they provide an advantage of being 100% recyclable and eco-friendly. The main hindrance in the mass adoption of NC film as a substitute for plastic is its higher surface roughness which leads to ink penetration, and dispersion in the channels on the film. This research was conducted to tune the RMS roughness of NC films to a range where they can replace plastics in electronics(310-470nm). We studied the dependence of the surface roughness of the NC film on the following tunable aspects: 1) composition by weight of the NC suspension that is sprayed on a silicon wafer 2) the width and the depth of the channels on the silicon wafer used as a base. Various silicon wafers with channel depths ranging from 6 to 18 um and channel widths ranging from 5 to 500um were used as a base. Spray coating method for NC film production was used and two solutions namely, 1.5wt% NC and a 50-50 NC-CNC (cellulose nanocrystal) mixture in distilled water, were sprayed through a Wagner sprayer system model 117 at an angle of 90 degrees. The silicon wafer was kept on a conveyor moving at a velocity of 1.3+-0.1 cm/sec. Once the suspension was uniformly sprayed, the mould was left to dry in an oven at 50°C overnight. The images of the films were taken with the help of an optical profilometer, Olympus OLS 5000. These images were converted into a ‘.lext’ format and analyzed using Gwyddion, a data and image analysis software. Lowest measured RMS roughness of 291nm was with a 50-50 CNC-NC mixture, sprayed on a silicon wafer with a channel width of 5 µm and a channel depth of 12 µm. Surface roughness values of 320+-17nm were achieved at lower (5 to 10 µm) channel widths on a silicon wafer. This research opened the possibility of the usage of 100% recyclable NC films with an additive (50% CNC) in high-performance electronics. Possibility of using additives like Carboxymethyl Cellulose (CMC) is also being explored due to the hypothesis that CMC would reduce friction amongst fibers, which in turn would lead to better conformations amongst the NC fibers. CMC addition would thus be able to help tune the surface roughness of the NC film to an even greater extent in future.

Keywords: nano cellulose films, electronic circuits, nanocrystals and surface roughness

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2017 Analysis of 3 dB Directional Coupler Based On Silicon-On-Insulator (SOI) Large Cross-Section Rib Waveguide

Authors: Nurdiani Zamhari, Abang Annuar Ehsan

Abstract:

The 3 dB directional coupler is designed by using silicon-on-insulator (SOI) large cross-section and simulate by Beam Propagation Method at the communication wavelength of 1.55 µm and 1.48 µm. The geometry is shaped with rib height (H) of 6 µm and varied in step factor (r) which is 0.5, 0.6, 0.7 and 0.8. The wave guide spacing is also fixed to 5 µm and the slab width is symmetrical. In general, the 3 dB coupling lengths for four different cross-sections are several millimetre long. The 1.48 of wavelength give the longer coupling length if compare to 1.55 at the same step factor (r). Besides, the low loss propagation is achieved with less than 2 % of propagation loss.

Keywords: 3 dB directional couplers, silicon-on-insulator, symmetrical rib waveguide, OptiBPM 9

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2016 Deflection Effect on Mirror for Space Applications

Authors: Maamar Fatouma

Abstract:

Mirror optical performance can experience varying levels of stress and tolerances, which can have a notable impact on optical parametric systems. to ensure proper optical figure and position of mirror mounting within design tolerances, it is crucial to have a robust support structure in place for optical systems. The optical figure tolerance determines the allowable deviation from the ideal form of the mirror and the position tolerance determines the location and orientations of the optical axis of the optical systems. A variety of factors influence the optical figure of the mirror. Included are self-weight (Deflection), excitation from temperature change, temperature gradients and dimensional instability. This study employs an analytical approach and finite element method to examine the effects of stress resulting from mirror mounting on the wavefront passing through the mirror. The combined effect of tolerance and deflection on mirror performance is represented by an error budget. Numerical mirror mounting is presented to illustrate the space application of performance techniques.

Keywords: opto-mechanical, bonded optic, tolerance, self-weight distortion, Rayleigh criteria

Procedia PDF Downloads 56
2015 Nano-Texturing of Single Crystalline Silicon via Cu-Catalyzed Chemical Etching

Authors: A. A. Abaker Omer, H. B. Mohamed Balh, W. Liu, A. Abas, J. Yu, S. Li, W. Ma, W. El Kolaly, Y. Y. Ahmed Abuker

Abstract:

We have discovered an important technical solution that could make new approaches in the processing of wet silicon etching, especially in the production of photovoltaic cells. During its inferior light-trapping and structural properties, the inverted pyramid structure outperforms the conventional pyramid textures and black silicone. The traditional pyramid textures and black silicon can only be accomplished with more advanced lithography, laser processing, etc. Importantly, our data demonstrate the feasibility of an inverted pyramidal structure of silicon via one-step Cu-catalyzed chemical etching (CCCE) in Cu (NO3)2/HF/H2O2/H2O solutions. The effects of etching time and reaction temperature on surface geometry and light trapping were systematically investigated. The conclusion shows that the inverted pyramid structure has ultra-low reflectivity of ~4.2% in the wavelength of 300~1000 nm; introduce of Cu particles can significantly accelerate the dissolution of the silicon wafer. The etching and the inverted pyramid structure formation mechanism are discussed. Inverted pyramid structure with outstanding anti-reflectivity includes useful applications throughout the manufacture of semi-conductive industry-compatible solar cells, and can have significant impacts on industry colleagues and populations.

Keywords: Cu-catalyzed chemical etching, inverted pyramid nanostructured, reflection, solar cells

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2014 Optimization of Thermopile Sensor Performance of Polycrystalline Silicon Film

Authors: Li Long, Thomas Ortlepp

Abstract:

A theoretical model for the optimization of thermopile sensor performance is developed for thermoelectric-based infrared radiation detection. It is shown that the performance of polycrystalline silicon film thermopile sensor can be optimized according to the thermoelectric quality factor, sensor layer structure factor, and sensor layout geometrical form factor. Based on the properties of electrons, phonons, grain boundaries, and their interactions, the thermoelectric quality factor of polycrystalline silicon is analyzed with the relaxation time approximation of the Boltzmann transport equation. The model includes the effect of grain structure, grain boundary trap properties, and doping concentration. The layer structure factor is analyzed with respect to the infrared absorption coefficient. The optimization of layout design is characterized by the form factor, which is calculated for different sensor designs. A double-layer polycrystalline silicon thermopile infrared sensor on a suspended membrane has been designed and fabricated with a CMOS-compatible process. The theoretical approach is confirmed by measurement results.

Keywords: polycrystalline silicon, relaxation time approximation, specific detectivity, thermal conductivity, thermopile infrared sensor

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2013 Multicasting Characteristics of All-Optical Triode Based on Negative Feedback Semiconductor Optical Amplifiers

Authors: S. Aisyah Azizan, M. Syafiq Azmi, Yuki Harada, Yoshinobu Maeda, Takaomi Matsutani

Abstract:

We introduced an all-optical multi-casting characteristics with wavelength conversion based on a novel all-optical triode using negative feedback semiconductor optical amplifier. This study was demonstrated with a transfer speed of 10 Gb/s to a non-return zero 231-1 pseudorandom bit sequence system. This multi-wavelength converter device can simultaneously provide three channels of output signal with the support of non-inverted and inverted conversion. We studied that an all-optical multi-casting and wavelength conversion accomplishing cross gain modulation is effective in a semiconductor optical amplifier which is effective to provide an inverted conversion thus negative feedback. The relationship of received power of back to back signal and output signals with wavelength 1535 nm, 1540 nm, 1545 nm, 1550 nm, and 1555 nm with bit error rate was investigated. It was reported that the output signal wavelengths were successfully converted and modulated with a power penalty of less than 8.7 dB, which the highest is 8.6 dB while the lowest is 4.4 dB. It was proved that all-optical multi-casting and wavelength conversion using an optical triode with a negative feedback by three channels at the same time at a speed of 10 Gb/s is a promising device for the new wavelength conversion technology.

Keywords: cross gain modulation, multicasting, negative feedback optical amplifier, semiconductor optical amplifier

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2012 Many-Body Effect on Optical Gain of n+ Doping Tensile-Strained Ge/GeSiSn Quantum Wells

Authors: W. J. Fan, B. S. Ma

Abstract:

The many-body effect on band structure and optical gain of n+ doping tensile-strained Ge/GeSiSn quantum wells are investigated by using an 8-band k•p method. Phase diagram of Ge/GeSiSn quantum well is obtained. The E-k dispersion curves, band gap renormalization and optical gain spectra including many-body effect will be calculated and discussed. We find that the k.p method without many-body effect will overestimate the optical gain and transition energy.

Keywords: Si photonics, many-body effect, optical gain, Ge-on-Si, Quantum well

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2011 Numerical Modelling of Surface Waves Generated by Low Frequency Electromagnetic Field for Silicon Refinement Process

Authors: V. Geza, J. Vencels, G. Zageris, S. Pavlovs

Abstract:

One of the most perspective methods to produce SoG-Si is refinement via metallurgical route. The most critical part of this route is refinement from boron and phosphorus. Therefore, a new approach could address this problem. We propose an approach of creating surface waves on silicon melt’s surface in order to enlarge its area and accelerate removal of boron via chemical reactions and evaporation of phosphorus. A two dimensional numerical model is created which includes coupling of electromagnetic and fluid dynamic simulations with free surface dynamics. First results show behaviour similar to experimental results from literature.

Keywords: numerical modelling, silicon refinement, surface waves, VOF method

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2010 Magnetic and Optical Properties of GaFeMnN

Authors: A.Abbad, H.A.Bentounes, W.Benstaali

Abstract:

The full-potential linearized augmented plane wave method (FP-LAPW) within the Generalized Gradient Approximation (GGA) is used to calculate the magnetic and optical properties of quaternary GaFeMnN. The results show that the compound becomes magnetic and half metallic and there is an apparition of peaks at low frequencies for the optical properties.

Keywords: FP-LAPW, LSDA, magnetic moment, reflectivity

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2009 Study on Angle Measurement Interferometer around Any Axis Direction Selected by Transmissive Liquid Crystal Device

Authors: R. Furutani, G. Kikuchi

Abstract:

Generally, the optical interferometer system is too complicated and difficult to change the measurement items, pitch, yaw, and row, etc. In this article, the optical interferometer system using the transmissive Liquid Crystal Device (LCD) as the switch of the optical path was proposed. At first, the normal optical interferometer, Michelson interferometer, was constructed to measure the pitch angle and the yaw angle. In this optical interferometer, the ball lenses with the refractive indices of 2.0 were used as the retroreflectors. After that, the transmissive LCD was introduced as the switch to select the adequate optical path. In this article, these optical systems were constructed. Pitch measurement interferometer and yaw measurement interferometer were switched by the transmissive LCD. When the LCD was open for the yaw measurement, the yaw was sufficiently measured and optical path for the pitch measurement was blocked. On the other hand, when the LCD was open for the pitch measurement, the pitch was measured and the optical path for the yaw measurement was also blocked. In this article, the results of both of pitch measurement and yaw measurement were shown, and the result of blocked yaw measurement and pitch measurement were shown. As this measurement system was based on Michelson interferometer, the other measuring items, the deviation along the optical axis, the vertical deviation to the optical axis and row angle, could be measured by the additional ball lenses and the additional switching in future work.

Keywords: any direction angle, ball lens, laser interferometer, transmissive liquid crystal device

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2008 The Structural and Electrical Properties of Cadmium Implanted Silicon Diodes at Room Temperature

Authors: J. O. Bodunrin, S. J. Moloi

Abstract:

This study reports on the x-ray crystallography (XRD) structure of cadmium-implanted p-type silicon, the current-voltage (I-V) and capacitance-voltage (C-V) characteristics of unimplanted and cadmium-implanted silicon-based diodes. Cadmium was implanted at the energy of 160 KeV to the fluence of 10¹⁵ ion/cm². The results obtained indicate that the diodes were well fabricated, and the introduction of cadmium results in a change in behavior of the diodes from normal exponential to ohmic I-V behavior. The C-V measurements, on the other hand, show that the measured capacitance increased after cadmium doping due to the injected charge carriers. The doping density of the p-Si material and the device's Schottky barrier height was extracted, and the doping density of the undoped p-Si material increased after cadmium doping while the Schottky barrier height reduced. In general, the results obtained here are similar to those obtained on the diodes fabricated on radiation-hard material, indicating that cadmium is a promising metal dopant to improve the radiation hardness of silicon. Thus, this study would assist in adding possible options to improve the radiation hardness of silicon to be used in high energy physics experiments.

Keywords: cadmium, capacitance-voltage, current-voltage, high energy physics experiment, x-ray crystallography, XRD

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2007 Optical Flow Direction Determination for Railway Crossing Occupancy Monitoring

Authors: Zdenek Silar, Martin Dobrovolny

Abstract:

This article deals with the obstacle detection on a railway crossing (clearance detection). Detection is based on the optical flow estimation and classification of the flow vectors by K-means clustering algorithm. For classification of passing vehicles is used optical flow direction determination. The optical flow estimation is based on a modified Lucas-Kanade method.

Keywords: background estimation, direction of optical flow, K-means clustering, objects detection, railway crossing monitoring, velocity vectors

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2006 Low Trigger Voltage Silicon Controlled Rectifier Stacking Structure with High Holding Voltage for High Voltage Applications

Authors: Kyoung-Il Do, Jun-Geol Park, Hee-Guk Chae, Jeong-Yun Seo, Yong-Seo Koo

Abstract:

A SCR stacking structure is proposed to have improved Latch-up immunity. In comparison with conventional SCR (Silicon Controlled Rectifier), the proposed Electrostatic Discharge (ESD) protection circuit has a lower trigger characteristic by using the LVTSCR (Low Voltage Trigger) structure. Also the proposed ESD protection circuit has improved Holding Voltage Characteristic by using N-stack technique. These characteristics enable to have latch-up immunity in operating conditions. The simulations are accomplished by using the Synopsys TCAD. It has a trigger voltage of 8.9V and a holding voltage of 1.8V in a single structure. And when applying the stack technique, 2-stack has the holding voltage of 3.8V and 3-stack has the holding voltage of 5.1 V.

Keywords: electrostatic discharge (ESD), low voltage trigger silicon controlled rectifier (LVTSCR), MVTSCR, power clamp, silicon controlled rectifier (SCR), latch-up

Procedia PDF Downloads 414
2005 New Result for Optical OFDM in Code Division Multiple Access Systems Using Direct Detection

Authors: Cherifi Abdelhamid

Abstract:

In optical communication systems, OFDM has received increased attention as a means to overcome various limitations of optical transmission systems such as modal dispersion, relative intensity noise, chromatic dispersion, polarization mode dispersion and self-phase modulation. The multipath dispersion limits the maximum transmission data rates. In this paper we investigate OFDM system where multipath induced intersymbol interference (ISI) is reduced and we increase the number of users by combining OFDM system with OCDMA system using direct detection Incorporate OOC (orthogonal optical code) for minimize a bit error rate.

Keywords: OFDM, OCDMA, OOC (orthogonal optical code), (ISI), prim codes (Pc)

Procedia PDF Downloads 619
2004 Effect of Manganese Doping Percentage on Optical Band Gap and Conductivity of Copper Sulphide Nano-Films Prepared by Electrodeposition Method

Authors: P. C. Okafor, A. J. Ekpunobi

Abstract:

Mn doped copper sulphide (CuS:Mn) nano-films were deposited on indiums coated tin oxide (ITO) glass substrates using electrodeposition method. Electrodeposition was carried out using bath of PH = 3 at room temperature. Other depositions parameters such as deposition time (DT) are kept constant while Mn doping was varied from 3% to 23%. Absorption spectra of CuS:Mn films was obtained by using JENWAY 6405 UV-VIS -spectrophotometer. Optical band gap (E_g ), optical conductivity (σo) and electrical conductivity (σe) of CuS:Mn films were determined using absorption spectra and appropriate formula. The effect of Mn doping % on these properties were investigated. Results show that film thickness (t) for the 13.27 nm to 18.49 nm; absorption coefficient (α) from 0.90 x 1011 to 1.50 x 1011 optical band gap from 2.29eV to 2.35 eV; optical conductivity from 1.70 x 1013 and electrical conductivity from 160 millions to 154 millions. Possible applications of such films for solar cells fabrication and optoelectronic devices applications were also discussed.

Keywords: copper sulphide (CuS), Manganese (Mn) doping, electrodeposition, optical band gap, optical conductivity, electrical conductivity

Procedia PDF Downloads 677
2003 A Nanoelectromechanical Tunable Oscillator Base on a High-Q Optical Cavity

Authors: Jianguo Huang, Hong Cai, Bin Dong, Jifang Tao, Aiqun Liu, Dim-Lee Kwong, Yuandong Gu

Abstract:

We developed a miniaturized tunable optomechanical oscillator based on the nanoelectromechanical systems (NEMS) technology, and its frequencies can be electrostatically tuned by as much as 10%. By taking both advantages of optical and electrical spring, the oscillator achieves a high tuning sensitivity without resorting to mechanical tension. In particular, the proposed high-Q optical cavity design greatly enhances the system sensitivity, making it extremely sensitive to the small motional signal.

Keywords: nanoelectromechanical systems (NEMS), nanotechnology, optical force, oscillator

Procedia PDF Downloads 467